• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A plurality of solar batteries are provided between a first substrate and a second substrate. The first substrate and the second substrate are formed of, for example, a paper or a non-woven cloth, which is a material including a natural fiber, cellulose, as the main component. Papers and silicon have relatively small difference in coefficient of thermal expansion so that warp caused by changes in the temperature is suppressed. Also, papers are light, easy to be processed and spontaneously decomposed so that disposing becomes easy. The first substrate is preferable to be transparent or semitransparent and preferable to be formed of cellophane paper, glassine paper, parchment paper, or Japanese paper. Oil may be included in the material. The second substrate is preferable to be opaque. A waterproof film may be formed on the first substrate and the second substrate.
    公开号:US20010007262A1
    申请号:US09/800,879
    申请日:2001-03-07
    公开日:2001-07-12
    发明作者:Takeshi Matsushita；Shuzo Ohara
    申请人:Takeshi Matsushita；Shuzo Ohara；
    IPC主号:H01L31-068
    专利说明:
    [0001] 1. Field of the Invention [0001]
    [0002] The present invention relates to a semiconductor device comprising thin film semiconductor layers such as a solar battery and a method of manufacturing the same. Specifically, it relates to a semiconductor device manufactured through forming thin film semiconductor layers on a provisional substrate and then transcribing it on another substrate, and a method of manufacturing the same. [0002]
    [0003] 2. Description of the Related Art [0003]
    [0004] In recent years, solar batteries have come to be in practical use. It is necessary to save resources and to decrease costs to utilize solar batteries in full-scale. Thin film solar batteries are preferred to thick film solar batteries when energy conversion (light-electricity) efficiency and shortening the cycle of energy recycle are taken into consideration. [0004]
    [0005] The same applicants as this application have first proposed a method of separating an element formation layer from a substrate (Japanese Patent Application laid-open Hei 8-213645). In the method, a porous layer is formed on a single crystalline substrate as an isolation layer and a semiconductor layer to be a solar battery is grown on the porous layer. Then, a plastic plate or a glass plate is adhered onto the semiconductor layer using an adhesive, and the semiconductor layer is exfoliated from the single crystal substrate together with the plastic plate or the glass plate by applying tensile stress. [0005]
    [0006] As described, a thin film solar battery of the related art is manufactured by transcribing it onto a plastic plate or a glass plate. As a result, warp is generated because of the difference in thermal expansion of the solar battery and the plastic plate, resulting in the destruction of the solar battery. Also, a glass plate is difficult to be applied depending on its usage since it is hard to be folded or to be cut. [0006]
    [0007] Furthermore, as the plastic plate and the glass plate are not spontaneously decomposed, the solar battery which becomes unusable must be artificially decomposed when being disposed. Therefore, there is a problem of waste disposal such as running cost of decomposing, if solar batteries becomes widespread use in full-scale, and if there are a large amount of the solar batteries which are unusable. [0007] SUMMARY OF THE INVENTION
    [0008] The invention has been designed to overcome the forgoing problems. The object is to provide a semiconductor device in which warp is suppressed and processing and disposing can be easily performed, and a method of manufacturing the same. [0008]
    [0009] A semiconductor device of the invention comprises: thin film semiconductor layers having one side and the other side facing each other; and a first substrate made of a material including cellulose which is positioned on the one side. [0009]
    [0010] A method of manufacturing a semiconductor device of the invention includes the steps of: depositing thin film semiconductor layers on a provisional substrate; exfoliating the thin film semiconductor layers from the provisional substrate; and transcribing the thin film semiconductor layers onto the first substrate. [0010]
    [0011] In the semiconductor device of the invention, the first substrate is formed of a material containing cellulose. Therefore, the difference in thermal expansion of the first substrate and the thin film semiconductor layers is decreased and warp caused by changes in temperature is suppressed. Also, the semiconductor device becomes light and processing becomes easy. Furthermore, the thin film semiconductor layer can be spontaneously decomposed so that disposal becomes easy. [0011]
    [0012] In the method of manufacturing a semiconductor device of the invention, after thin film semiconductor layers are deposited on a provisional substrate, the thin film semiconductor layers are exfoliated from the provisional substrate; and the thin film semiconductor layers are transcribed onto the first substrate. [0012]
    [0013] Other and further objects, features and advantages of the invention will appear more fully from the following descriptions. [0013] BRIEF DESCRIPTION OF THE DRAWINGS
    [0014] FIG. 1 is a cross section showing the configuration of a semiconductor device according to a first example of the invention. [0014]
    [0015] FIGS. 2A, 2B, [0015] 2C and 2D are cross sections showing each manufacturing step of the semiconductor device shown in FIG. 1.
    [0016] FIGS. 3A, 3B and [0016] 3C are cross sections showing each manufacturing step following the steps shown in FIGS. 2A, 2B, 2C and 2D.
    [0017] FIGS. 4A and 4B are cross sections showing each manufacturing step following the steps shown in FIGS. 3A, 3B and [0017] 3C.
    [0018] FIG. 5 is a cross section showing the configuration of a semiconductor device according to a second example of the invention. [0018]
    [0019] FIG. 6 is a cross section showing the configuration of a semiconductor device according to a third example of the invention. [0019] DESCRIPTION OF THE PREFERRED EMBODIMENTS
    [0020] Examples of the invention will be described in the followings with reference to the drawings. [0020]
    [0021] First Example [0021]
    [0022] FIG. 1 shows the configuration of a semiconductor device according to a first example of the invention. The semiconductor device comprises a plurality of solar batteries [0022] 10, which are thin film semiconductor layers, provided with a space in between each of them. FIG. 1 shows two of the solar batteries. The solar batteries 10 have one side and the other side facing each other. A first substrate 21 for both of the solar batteries 10 is extendedly formed on one side and a second substrate 22 for both is extendedly formed on the other side, respectively. The solar batteries 10 and the first substrate 21 are adhered by an adhesive layer 23 while the solar battery and the second substrate 22 are adhered by an adhesive layer 24. The adhesive layers 23 and 24 are made of ethylene vinyl acetate (EVA), phloro plastic (THV) or the like.
    [0023] Each of the solar batteries [0023] 10 has the same configuration, comprising a semiconductor layer 11 of about 1 to 50 μm in thickness made of single crystalline silicon. Each of p-type regions 11 a of 1 to 49 μm in thickness including p-type impurity such as boron (B) 1×1015 to 1×1018/cm3 is provided in each of the semiconductor layers 11.
    [0024] Each of n[0024] +-type regions 11 b of about 0.2 μm, for example, in thickness, including n-type impurities such as phosphorus (P) with high concentration such as 1×1019/cm3, is provided on one side (that is, the first substrate 21 side) adjacent to each of the p-type regions 11 a. Furthermore, each of p+-type regions 11 c of about 1 μm, for example, in thickness including p-type impurity such as boron with high concentration such as 1×1019/cm3, is provided on one side of each of the p-type regions 11 a. Each of the n+-type regions 11 b, which is cathode of the solar battery, and each of the p+-type regions 11 c, which is anode of the solar battery, are provided with a space in between in each of the semiconductor layers 11.
    [0025] Each of p[0025] +-type regions 11 d of about 1 μm, for example, in thickness, including p-type impurities such as boron with high concentration such as 1× 1019/cm3, is provided on the other side (that is, the second substrate 22 side) adjacent to each of the p-type regions 11 a. The p+-type regions 11 d are for reflecting electron generated by light in the p-type regions 11 c and for increasing light-electric conversion efficiency by decreasing recombination of electron and hole in the p+-type regions 11 d.
    [0026] Each of the solar batteries [0026] 10 comprises a reflection-proof film 12 each provided on one side of each semiconductor layer 11. Each of the reflection-proof films 12 is formed of, for example, titanium oxide (TiO2) of about 60 nm in thickness and prevent light from being reflected from the surface (especially, the surface of each of n+-type regions 11 b) of each semiconductor layer 11. An opening is formed in each of the reflection-proof films 12 corresponding to each of the n+-type regions 11 b, and each of metallic electrodes 13 made of aluminum (Al), for example, is electrically connected to each of the n+-type regions 11 b through each opening.
    [0027] Each of the metallic electrodes [0027] 13 is extended to a neighboring solar battery 10, respectively, and is electrically connected to each of the p+-type regions 11 c through the opening formed on each reflection-proof film 12. In other words, each of the metallic electrodes 13 connects two neighboring solar batteries 10 in series. An oxidation film 14 is formed in between each metallic electrode 13 and each semiconductor layer 11, respectively. Each of the metallic electrodes 13 is electrically connected to each of the n+-type regions 11 b and each of the p+-type regions 11 c, respectively, through each opening formed on the oxidation film 14.
    [0028] Each of the solar batteries [0028] 10 further comprises a reverse-side electrode 15 provided adjacent to the other side of each of p+-type regions 11 d. Each of the reverse-side electrodes 15 is formed of aluminum, for example, and decreases series resistance of each solar battery 10 while reflecting the light permeated through the semiconductor layer 11.
    [0029] The first substrate [0029] 21 and the second substrate 22 have a thickness of about 100 μm, for example, and are made of at least paper or non-woven cloth, for example, which includes a natural fiber, cellulose, as the main component. It is preferable that the first substrate 21 is transparent or semitransparent in order to increase permeation rate of light. This means, it is preferable that the first substrate 21 is formed of at least one kind of paper selected from the group of cellophane paper, glassine paper, parchment paper (paper which is made of chemical pulp and is processed by sulfuric acid solution), and Japanese paper such as shoji paper, for example. Paper or non-woven cloth including oil are also preferable as the material for the first substrate 21 since they have high permeation rate. On the other hand, it is preferable that the second substrate 22 is opaque, highly lustrous and white in order to increase the reflection rate of light.
    [0030] There is a case where at least part of the surfaces of the first substrate [0030] 21 and the second substrate 22 have patterns of illustrations or letters, which can be marks for distinguishing or can add the beauty when they are in use. The patterns may be formed by making concavo-convex area on the surface or may be formed by printing.
    [0031] Such semiconductor device can be manufactured as follows. [0031]
    [0032] FIGS. 2A, 2B, [0032] 2C, 2D to FIGS. 4A, 4B show each manufacturing step. First, as shown in FIG. 2A, a provisional substrate 31 having, for example, a plurality of solar battery forming regions 31 a is provided. The provisional substrate 31 is formed of single crystalline silicon having a specific resistance of about 0.01 to 0.02 Ω·cm to which p-type impurity such as boron is added. Next, as shown in FIG. 2B, a porous layer 32 is formed on the surface of the provisional substrate 31 by anodizing, for example.
    [0033] Anodizing is a method of performing energizing using the provisional substrate [0033] 31 as anode in hydrofluoric acid solution. It can be performed by double-cell method, for example, disclosed in “‘Anodizing of porous silicon’ Surface Technology Vol.46 No.5 p8-13, 1995” by ITO and some others. In this method, a silicon substrate 31 on which a porous silicon layer 32 is formed is positioned in between two electrolytic solution cells, and a platinum electrode which is connected to the direct-current power supply is provided in each of both electrolytic solution cells. Then electrolytic solution is supplied to both of the electrolytic solution cells and direct-current voltage is applied to the platinum electrode. Thereby, the silicon substrate 31 becomes anode and the platinum electrode becomes cathode. As a result, one of the surface of the silicon substrate 31 is eroded and becomes porous.
    [0034] At this time, a first porous layer with a low porous rate is formed by performing a first step of anodizing for eight minuets with current density of about, for example, 0.5 to 3.0 mA/cm[0034] 2 using, for example, electrolytic solution of HF (hydrogen fluoride) : C2H5OH (ethanol)=1:1 as electrolytic solution (anodizing solution). Then, a second porous layer with medium porous rate is formed by performing a second step of anodizing for eight minutes with current density of about, for example, 3 to 20 mA/cm2. A third porous layer with high porous rate is formed by performing a third step of anodizing for several seconds with current density of about, for example, 40 to 300 mA/cm2. Incidentally, the third porous layer is the base for an isolation layer 32 a (FIG. 2C) which is described later. Thereby, a porous layer 32 having a total thickness of about 8 μm is formed.
    [0035] It is preferable that the provisional substrate [0035] 31 made of p-type single crystalline silicon is used since the porous silicon layer is formed thereon by anodizing. However, the substrate made of n-type single crystalline silicon or polycrystalline silicon may be used depending on the condition.
    [0036] Then, each of the solar batteries [0036] 10 is formed on the porous layer 32. First, holes on the surface of the porous layer 32 are covered by performing hydrogen annealing for thirty minutes at, for example, 1100° C. Then, as shown in FIG. 2C, p+-type regions 11 d and p-type regions 11 a, each of those made of single crystalline silicon are formed on, for example, the porous layer 32 in order by epitaxial growth using gas such as silane (SiH4) at 1070° C.
    [0037] While performing hydrogen annealing and epitaxial growth, atoms of silicon in the porous layer [0037] 32 are moved and rearranged. As a result, the portion of the porous layer 32, which has high porous rate further increases the porous rate and a layer with the least strength in tensile, that is, an isolation layer 32 a is formed. However, the isolation layer 32 a has sufficient tensile strength to an extent that the whole or a part of the p+-type regions 11 d and the p-type regions 11 a do not exfoliate from the provisional substrate 31 when forming each of the solar batteries 10 on the porous layer 32.
    [0038] Next, as shown in FIG. 2D, an oxidation film [0038] 33 is selectively formed on the p-type regions 11 a which corresponds to each of the solar battery forming regions 31 a by CVD (Chemical Vapor Deposition) method. Then, the p-type regions 11 a and the p+-type regions 11 d are selectively removed in order using, for example, alkaline etching solution such as potassium hydroxide (KOH) using the oxidation film 33 as a mask. Thereby, the p-type regions 11 a and the p+-type regions 11 d are separated, respectively, in accordance with each of the solar battery forming regions 31 a, and are separated to each of the solar batteries 10.
    [0039] At this time, etching may be performed until the porous layer [0039] 32 in order to ensure the separation of each of the solar batteries 10. However, it is preferable that etching is not performed until the isolation layer 32 a in order to exfoliate the solar batteries 10 easily from the provisional substrate 31 in the step to be described later.
    [0040] After separating the p-type regions [0040] 11 a and the p+-type regions 11 d, respectively, as shown in FIG. 3A, the oxidation film 33 is selectively removed in accordance with regions which each p+-type region 11 d is formed so that the surfaces of the corresponding p-type regions 11 a are selectively exposed. Then, each p+-type region 11 c is formed by injecting p-type impurity such as boron with high concentration into each p-type regions 11 a by, for example, ion implantation. After forming each of the p+-type regions 11 c, an oxidation film is formed thereon by CVD method or thermal oxidation. An oxidation film 14 is formed of this oxidation film and the oxidation film 33 formed earlier.
    [0041] After forming the oxidation film [0041] 14, as shown in FIG. 3B, the oxidation film 14 is selectively removed in accordance with region which each n+-type region 11 b is formed so that the surfaces of the corresponding p-type regions 11 a are selectively exposed. Then, n+-type regions 11 b are formed by injecting n-type impurity such as phosphorous with high concentration into each p-type region 11 a by, for example, ion implantation. After forming each of the n+-type regions 11 b, a reflection-proof film 12 is formed all over the surface and an opening is selectively formed on the reflection-proof film 12 and the oxidation film 14, respectively, in accordance with each n+-type region 11 b and each n+-type region 11 c. Then, each of metallic electrodes 13 made of, for example, aluminum is selectively formed so as to, for example, connect each of the neighboring solar batteries in series.
    [0042] After forming each of the solar batteries [0042] 10, as shown in FIG. 3C, a first substrate 21 made of a material which includes cellulose as the main component is adhered onto one side of each solar battery 10 with the contact layer 23 in between.
    [0043] After adhering the first substrate [0043] 21 as shown in FIG. 4A, each of the solar batteries 10 is exfoliated from the provisional substrate 31 together with the first substrate 21 in the isolation layer 32 a, and is transcribed onto the first substrate 21, respectively. At the time of exfoliating the solar batteries 10, for example, one of, or a combination of two or three of the following three methods are used: one is a method of adding tensile stress onto the first substrate 21 and the provisional substrate 31; another is a method of soaking the provisional substrate 31 in water or solution of such as ethanol and decreasing the strength of the isolation layer 32 a by irradiating supersonic; and the other is a method of decreasing the strength of the isolation layer 32 a by adding centrifugal separation. In the method of irradiating supersonic, if supersonic of, for example, 25 kHz, 600 W is irradiated, energy of supersonic is effectively transmitted to each solar battery 10 and the first substrate 21 so that atoms of silicon in the porous layer 32 are cut. As a result, tensile strength of the isolation layer 32 a is remarkably decreased.
    [0044] After transcribing each of the solar batteries [0044] 10 onto the first substrate 21, as shown in FIG. 4B, the porous layer 32 remained on the other side of each p+-type region 11 d is removed using alkaline etching liquid such as potassium hydroxide. Thereby, each of the neighboring solar batteries 10 which is short-circuited by the porous layer 32 is completely isolated. Then, each reverse-side electrode 15 made of aluminum is formed on the other side of each p+-type region 11 d by, for example, printing method.
    [0045] At last, a second substrate [0045] 22 made of a material which includes cellulose as the main component is adhered onto each solar battery 10 on the opposite side (that is, the other side) of the first substrate 21 with a contact layer 24 in between. Thereby, a semiconductor device shown in FIG. 1 is completed.
    [0046] The provisional substrate [0046] 31 after the solar batteries 10 are exfoliated can be reused in the next step of forming solar batteries provided that the porous layer 32 which is remained on the surface is removed by etching.
    [0047] The semiconductor device manufactured as described operates as follows. [0047]
    [0048] In the semiconductor device, if light is irradiated, part of light permeates through the first substrate [0048] 21 into each solar battery 10 and is absorbed. In each n+-type region 11 b and each p-type region 11 a in which light is absorbed, an electron-hole is generated. The electron generated in each of the p-type regions 11 a is pulled by electric field and moves into each of the n+-type regions 11 b, and the hole generated in each of the n+-type regions 11 b is pulled by electric field and moves into each of the p-type regions 11 a. Thereby, electric current proportional to the amount of irradiation light is generated.
    [0049] In the semiconductor device, the first substrate [0049] 21 is made of a material which includes cellulose as the main component so that irradiation of light into each of the solar batteries 10 is secured. Especially, if the first substrate 21 is transparent or semitransparent, sufficient amount of irradiation light is obtained.
    [0050] Furthermore, the first substrate [0050] 21 and the second substrate 22 are made of a material which includes cellulose as the main component, respectively, so that the difference in coefficient of thermal expansion between the first substrate 21, the second substrate 22 and each solar battery 10 can be decreased and warp caused by changes in the temperature can be suppressed. As a result, breakdown of each solar battery 10 can be suppressed.
    [0051] According to the example, the difference in coefficient of thermal expansion between the first substrate [0051] 21, the second substrate 22 and each solar battery 10 can be decreased and warp caused by changes in the temperature can be suppressed since the first substrate 21 and the second substrate 22 are made of a material which include cellulose as the main component, respectively. As a result, breakdown of each solar battery 10 can be suppressed.
    [0052] In addition, the semiconductor device can be lightened and the cost can be decreased while processing such as folding, bending, adhering or cutting can be easily performed. Therefore, its usage can be largely expanded to a case where, for example, the semiconductor device is built-in as the electric source of a watch. [0052]
    [0053] Furthermore, it can be spontaneously decomposed so that the cost needed for disposing can be decreased. Also, a toxic environmental hormone does not generate so that the environment can be protected. In addition, illustrations or letters can be drawn on the surfaces of the first substrate [0053] 21 and the second substrate 22. Therefore, the appearance when it is in use can be improved adding to its value.
    [0054] Moreover, if the first substrate [0054] 21 is transparent or semitransparent, the amount of light irradiated into each of the solar batteries 10 can be increased and the efficiency can be improved. In addition, if the second substrate 22 is opaque, light passed through each solar battery 10 can be reflected so that the amount of light irradiated into each solar battery 10 can be increased. As a result, efficiency of each solar battery 10 can be improved.
    [0055] Second Example [0055]
    [0056] FIG. 5 shows the configuration of a semiconductor device according to a second example of the invention. The semiconductor device has the identical configuration, operation and effects to those of the first example except that it comprises a reflection film [0056] 45. Also, it can be formed like the first embodiment. Hence, like elements are given like numerals and the detailed description of them will be omitted.
    [0057] The reflection film [0057] 45 is made of titanium oxide and is formed on the second substrate 22 on the solar batteries 10 side. The reflection film 45 is for increasing the amount of light irradiated into each solar battery 10 by reflecting the light passed through each solar battery 10. At this time, although the reflection film 45 is formed on the second substrate 22 on the solar batteries 10 side, it may be formed on the second substrate 22 on the opposite side of the solar batteries 10. Also, although the reflection film 45 is formed all over the surface, it may be formed on part of the surface. Incidentally, if the reflection film 45 is provided, the second substrate 22 does not required to be opaque, unlike the first example. The reflection film 45 can be formed by applying the powder of titanium oxide onto the surface of the second substrate 22.
    [0058] According to the example, the light passed through each of the solar batteries [0058] 10 can be reflected since the reflection film 45 is included. As a result, the amount of light irradiated into each solar battery 10 can be increased. Therefore, efficiency of each solar battery 10 can be improved.
    [0059] Third Example [0059]
    [0060] FIG. 6 shows the configuration of a semiconductor device according to a third example of the invention. The semiconductor device has the identical configuration, operation and effects to those of the first example except that it comprises waterproof films [0060] 56 and 57. Also, it can be formed in the same manner as in the first example. Therefore, like elements are given like numerals and the detailed description of them will be omitted.
    [0061] The waterproof film [0061] 56 is formed, for example, on the first substrate 21 on the opposite side of the solar batteries 10, and the waterproof film 57 is formed, for example, on the second substrate 22 on the opposite side of the solar batteries 10. The waterproof films 56 and 57 have a thickness of 20 μm, for example, and it is preferable that they are formed of resin film, respectively. As resin used for the resin film, for example, the following will be suitable: polyolefin resin; polyester resin; melamine resin; silicon resin; or biodegradable resin such as polylactic acid. The waterproof films 56 and 57 are for preventing the first substrate 21 and the second substrate 22 from absorbing water and swelling.
    [0062] At this time, the waterproof film [0062] 56 is formed on the first substrate 21 on the opposite side of the solar batteries 10 and the waterproof film 57 is formed on the second substrate 22 on the opposite side of the solar batteries 10. However, the waterproof film 56 may be formed on both sides of the first substrate 21 and the waterproof film 57 may be formed on both sides of the second substrate 22. In addition, although each of the waterproof films 56 and 57 are formed all over each of the first substrate 21 and the second substrate 22 at this time, they may be formed on a part of those surfaces.
    [0063] If necessary, a waterproof film made of resin may be formed on at least a part of the end face of the first substrate [0063] 21 and the second substrate 22 in order to prevent the first substrate 21 and the second substrate 22 from being impregnated with water. In addition, if necessary, a waterproof film such as a resin may be added to at least a part of the first substrate 21 and the second substrate 22. As a resin composing the waterproof film or the waterproof substance, the followings are used: emulsion such as polyolefin or synthetic rubber; polyester resin; melamine resin; silicon resin; or biodegradable resin. Especially, it is preferable that the resin having about the same index of refraction as cellulose is used when the first substrate 21 is impregnated with a resin so that the first substrate 21 can be made more transparent.
    [0064] According to the example, the first substrate [0064] 21 and the second substrate 22 can be prevented from absorbing water and swelling since the waterproof films 56 and 57 are included in the device. As a result, breakdown of the solar batteries 10 by swelling can be suppressed.
    [0065] Although the invention has been described by referring to each of the examples, it is not limited to the above-mentioned examples but various modifications can be applicable. For example, although a case where the first substrate [0065] 21 and the second substrate 22 are formed of at least either paper or non-woven cloth has been described in the above-mentioned examples, they may be formed of a material in which paper and non-woven cloth are laminated. Also, they may be formed of a material in which a plurality of papers are laminated. In this case, it is preferable that papers are laminated by making the flow direction of the fiber of cellulose generated at the time of making papers parallel or orthogonal.
    [0066] Furthermore, although a case where the whole first substrate [0066] 21 is transparent or semitransparent has been described in the above-mentioned examples, only a part of it corresponding to each of the solar batteries 10 may be transparent or semitransparent. Also, if the first substrate 21 is formed of paper or non-woven cloth including oil, only a part of the first substrate 21 corresponding to each of the solar batteries 10 may be formed by that material.
    [0067] In addition, although a case where the whole second substrate [0067] 22 is opaque has been described in the above-mentioned examples, only a part of it corresponding to each of the solar batteries 10 may be opaque.
    [0068] Furthermore, although a case where the semiconductor layer [0068] 11 is formed of single crystalline silicon has been described in the above-mentioned examples, it may be formed of polycrystalline silicon, amorphous silicon, the complex of both or a composite layer of both. In addition, in the above-mentioned examples, although the configuration of each solar battery 10 is described by referring to a specific example, the invention is broadly applied to a semiconductor device comprising solar batteries having another configuration.
    [0069] Moreover, a case where the semiconductor device comprises solar batteries [0069] 10 as thin film semiconductor layers has been described in the above-mentioned examples. However, the invention is broadly applied to a case where the semiconductor device comprises other thin film semiconductor layers such as other light-absorbing element or emission element, liquid crystal display, or integrated circuit element.
    [0070] As described, a semiconductor device of the invention comprises a first substrate made of a material including cellulose. As a result, the difference in thermal expansion of the first substrate and thin film semiconductor layers can be decreased and warp caused by changes in the temperature can be suppressed. Therefore, breakdown of the thin film semiconductor layers can be suppressed. [0070]
    [0071] Furthermore, the semiconductor device can be lightened and the cost can be decreased while processing such as folding, bending, adhering or cutting can be easily performed. Also, it can be spontaneously decomposed so that the cost needed for disposing can be decreased. Also, a toxic environmental hormone does not generate so that the environment can be protected. [0071]
    [0072] Especially, if solar batteries are included as the thin film semiconductor layers, the amount of light irradiated into each of the thin film semiconductor layers can be increased and the efficiency can be improved since the first substrate is formed to be transparent or semitransparent. [0072]
    [0073] In addition, by drawing illustrations on at least a part of the first substrate [0073] 21, the appearance can be improved adding to its value when it is in use.
    [0074] Furthermore, the first substrate and the second substrate can be prevented from absorbing water and swelling by comprising a waterproof film or including a waterproof substance. As a result, breakdown of the thin film semiconductor layers by swelling can be suppressed. [0074]
    [0075] Moreover, by comprising a second substrate made of a material including cellulose, same effect as comprising the first substrate made of a material including cellulose can be obtained. [0075]
    [0076] In addition, the light passed though the thin film semiconductor layers can be reflected, and the amount of the light irradiated into the thin film semiconductor layers can be increased in a case where the solar batteries are included as the thin film semiconductor layers by making the second substrate opaque or comprise a reflection film. As a result, efficiency can be increased. [0076]
    [0077] Moreover, according to a method of manufacturing a semiconductor device of the invention, the semiconductor device of the invention can be easily manufactured since the thin film semiconductor layers are exfoliated from the provisional substrate and are transcribed onto the first substrate made of a material including cellulose. [0077]
    [0078] Obviously many modifications and variations of the present invention are possible in the light of the above teachings. It is therefore to be understood that within the scope of the appended claims the invention may be practiced otherwise than as specifically described. [0078]
    权利要求:
    Claims (25)
    [1" id="US-20010007262-A1-CLM-00001] 1. A semiconductor device comprising:
    thin film semiconductor layers having one side and the other side facing each other; and
    a first substrate made of a material including cellulose, which is positioned on the one side.
    [2" id="US-20010007262-A1-CLM-00002] 2. A semiconductor device according to
    claim 1 wherein the first substrate contains at least one of paper and non-woven cloth.
    [3" id="US-20010007262-A1-CLM-00003] 3. A semiconductor device according to
    claim 1 wherein at least a part of the fist substrate is transparent or semitransparent.
    [4" id="US-20010007262-A1-CLM-00004] 4. A semiconductor device according to
    claim 1 wherein at least a part of the first substrate includes oil.
    [5" id="US-20010007262-A1-CLM-00005] 5. A semiconductor device according to
    claim 1 wherein the first substrate contains at least one of the group consisting of cellophane paper, glassine paper, parchment paper and Japanese paper.
    [6" id="US-20010007262-A1-CLM-00006] 6. A semiconductor device according to
    claim 1 wherein at least a part of the first substrate is patterned.
    [7" id="US-20010007262-A1-CLM-00007] 7. A semiconductor device according to
    claim 1 wherein at least a part of the surface of the first substrate is covered with a waterproof film.
    [8" id="US-20010007262-A1-CLM-00008] 8. A semiconductor device according to
    claim 1 wherein at least part of the first substrate contains a waterproof substance.
    [9" id="US-20010007262-A1-CLM-00009] 9. A semiconductor device according to
    claim 1 wherein at least one of the thin film semiconductor layers is selected from the group consisting of single crystalline silicon, polycrystalline silicon and amorphous silicon.
    [10" id="US-20010007262-A1-CLM-00010] 10. A semiconductor device according to
    claim 1 wherein a second substrate made of a material including cellulose is positioned on the other side of the thin film semiconductor layers.
    [11" id="US-20010007262-A1-CLM-00011] 11. A semiconductor device according to
    claim 10 wherein the second substrate contains paper and/or non-woven cloth.
    [12" id="US-20010007262-A1-CLM-00012] 12. A semiconductor device according to
    claim 10 wherein at least a part of the second substrate is opaque.
    [13" id="US-20010007262-A1-CLM-00013] 13. A semiconductor device according to
    claim 10 wherein a reflecting film is deposited on at least a part of the surface of the second substrate.
    [14" id="US-20010007262-A1-CLM-00014] 14. A semiconductor device according to
    claim 10 wherein at least a part of the surface of the second substrate is covered with a waterproofing film.
    [15" id="US-20010007262-A1-CLM-00015] 15. A semiconductor device according to
    claim 10 wherein at least a part of the second substrate contains a waterproofing substance.
    [16" id="US-20010007262-A1-CLM-00016] 16. A method of manufacturing a semiconductor device including the steps of:
    depositing thin film semiconductor layers on a provisional substrate;
    exfoliating the thin film semiconductor layers from the provisional substrate; and
    transcribing the thin film semiconductor layers onto the first substrate.
    [17" id="US-20010007262-A1-CLM-00017] 17. A method of manufacturing a thin film semiconductor device according to
    claim 16 wherein the thin film semiconductor layers are transcribed onto the first substrate on a part of the surface of which a waterproof film is deposited.
    [18" id="US-20010007262-A1-CLM-00018] 18. A method of manufacturing a thin film semiconductor device according to
    claim 16 wherein the thin film semiconductor layers are deposited on the provisional substrate with a porous layer in between.
    [19" id="US-20010007262-A1-CLM-00019] 19. A method of manufacturing a thin film semiconductor according to
    claim 18 wherein the porous layer is formed by anodizing.
    [20" id="US-20010007262-A1-CLM-00020] 20. A method of manufacturing a thin film semiconductor device according to
    claim 18 wherein after the first substrate is adhered on the thin film semiconductor layers, the thin film semiconductor layers are exfoliated from the provisional substrate by at least one of means of exposing the thin film semiconductor layers deposited on the first substrate to supersonic, applying force to pull the thin film semiconductor layers and the first substrate apart, and centrifugal separation.
    [21" id="US-20010007262-A1-CLM-00021] 21. A method of manufacturing a thin film semiconductor device according to
    claim 18 wherein after the thin film semiconductor layers are exfoliated from the provisional substrate made of single crystalline or polycrystalline semiconductor material, the provisional substrate is reused in a process of manufacturing the following thin film semiconductor layers by removing the remains of the porous layer.
    [22" id="US-20010007262-A1-CLM-00022] 22. A method of manufacturing a semiconductor device according to
    claim 16 wherein after the thin film semiconductor layers are deposited on more than one regions, the regions are separated each other and then the thin film semiconductor layers of each region are transcribed onto the first substrate.
    [23" id="US-20010007262-A1-CLM-00023] 23. A method of manufacturing a semiconductor device according to
    claim 16 wherein after the thin film semiconductor layers are transcribed onto the first substrate, the second substrate containing cellulose is positioned on the side of the thin film semiconductor layers opposite to the first substrate.
    [24" id="US-20010007262-A1-CLM-00024] 24. A method of manufacturing a thin film semiconductor device according to
    claim 23 wherein a reflecting film is deposited on at least a part of the surface of the second substrate.
    [25" id="US-20010007262-A1-CLM-00025] 25. A method of manufacturing a semiconductor device according to
    claim 23 wherein at least a part of the surface of the second substrate is covered with a waterproof film.
    类似技术:
    公开号 | 公开日 | 专利标题
    US6222118B1|2001-04-24|Semiconductor device and method of manufacturing the same
    KR20010051010A|2001-06-25|Method of manufacturing semiconductor device
    US9087950B2|2015-07-21|Photoelectric conversion device and method for manufacturing the same
    RU2190901C2|2002-10-10|Photoelectric foil manufacturing process and foil produced in the process
    JP2006332453A|2006-12-07|Thin film solar battery and method for manufacturing the same
    US20100300506A1|2010-12-02|Low-cost high-efficiency solar module using epitaxial si thin-film absorber and double-sided heterojunction solar cell with integrated module fabrication
    US8409911B2|2013-04-02|Methods for metallization of solar cells
    JP4368685B2|2009-11-18|Manufacturing method of solar cell unit using temporary substrate
    US6638788B2|2003-10-28|Solar cell and method of manufacturing same
    JP2005116930A|2005-04-28|Solar cell and manufacturing method thereof
    JP2011014889A|2011-01-20|Photoelectric conversion device and method for manufacturing the same
    GB2030766A|1980-04-10|Laser treatment of semiconductor material
    JPH05299677A|1993-11-12|Solar battery and its manufacture
    CN102239571A|2011-11-09|Method for manufacturing thin-film photoelectric conversion device
    WO2010029939A1|2010-03-18|Method for manufacturing solar cell module
    JP3746410B2|2006-02-15|Method for manufacturing thin film solar cell
    JPH1168133A|1999-03-09|Thin-film element module and its manufacture
    CN107393996B|2019-03-05|Heterojunction solar battery and preparation method thereof
    JP2004214565A|2004-07-29|Method for manufacturing integrated thin-film solar cell and integrated thin-film solar cell
    JP2005033006A|2005-02-03|Integrated tandem junction solar cell and its manufacturing method
    JPH10150211A|1998-06-02|Thin film single crystal semiconductor solar cell and its manufacture
    JP3762013B2|2006-03-29|Manufacturing method of integrated thin film photoelectric conversion device
    JP2014123689A|2014-07-03|Back surface electrode type solar cell element and method of manufacturing the same
    JPH11330513A|1999-11-30|Manufacture for integrated silicon system thin film photoelectric converter
    JP2001118758A|2001-04-27|Manufacturing of semiconductor element
    同族专利:
    公开号 | 公开日
    US6624050B2|2003-09-23|
    US6222118B1|2001-04-24|
    JP2000124341A|2000-04-28|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US20070295394A1|2006-06-27|2007-12-27|Biosolar, Inc.|Method for building thin film flexible solar cells on bio-based plastic substrates|
    US20080092944A1|2006-10-16|2008-04-24|Leonid Rubin|Semiconductor structure and process for forming ohmic connections to a semiconductor structure|
    US20080290368A1|2007-05-21|2008-11-27|Day4 Energy, Inc.|Photovoltaic cell with shallow emitter|
    US20090025788A1|2002-08-29|2009-01-29|Day4 Energy, Inc.|Electrode for photovoltaic cells, photovoltaic cell and photovoltaic module|
    US20100147368A1|2007-05-17|2010-06-17|Day4 Energy Inc.|Photovoltaic cell with shallow emitter|
    US20100200043A1|2009-02-12|2010-08-12|Stmicroelectronics S.R.L.|Solar panel having two monolithical multicell photovoltaic modules of different fabrication technology|
    US20100275976A1|2007-12-18|2010-11-04|Day4 Energy Inc.|Photovoltaic module with edge access to pv strings, interconnection method, apparatus, and system|
    US20110189810A1|2008-07-28|2011-08-04|Day4 Energy Inc.|Crystalline silicon pv cell with selective emitter produced with low temperature precision etch back and passivation process|US4640583A|1983-07-22|1987-02-03|Kabushiki Kaisha Seiko Epson|Display panel having an inner and an outer seal and process for the production thereof|
    US4683147A|1984-04-16|1987-07-28|Canon Kabushiki Kaisha|Method of forming deposition film|
    JPS6214477A|1985-07-12|1987-01-23|Teijin Ltd|Solar cell module|
    US5391257A|1993-12-10|1995-02-21|Rockwell International Corporation|Method of transferring a thin film to an alternate substrate|
    JP2992464B2|1994-11-04|1999-12-20|キヤノン株式会社|Covering wire for current collecting electrode, photovoltaic element using the covering wire for current collecting electrode, and method of manufacturing the same|
    US6107213A|1996-02-01|2000-08-22|Sony Corporation|Method for making thin film semiconductor|
    JPH0918042A|1995-06-27|1997-01-17|Fuji Electric Co Ltd|Solar battery device and manufacture thereof|
    EP0849788B1|1996-12-18|2004-03-10|Canon Kabushiki Kaisha|Process for producing semiconductor article by making use of a substrate having a porous semiconductor layer|
    EP0851513B1|1996-12-27|2007-11-21|Canon Kabushiki Kaisha|Method of producing semiconductor member and method of producing solar cell|US9006563B2|2006-04-13|2015-04-14|Solannex, Inc.|Collector grid and interconnect structures for photovoltaic arrays and modules|
    US9236512B2|2006-04-13|2016-01-12|Daniel Luch|Collector grid and interconnect structures for photovoltaic arrays and modules|
    US8729385B2|2006-04-13|2014-05-20|Daniel Luch|Collector grid and interconnect structures for photovoltaic arrays and modules|
    US9865758B2|2006-04-13|2018-01-09|Daniel Luch|Collector grid and interconnect structures for photovoltaic arrays and modules|
    US8884155B2|2006-04-13|2014-11-11|Daniel Luch|Collector grid and interconnect structures for photovoltaic arrays and modules|
    US8664030B2|1999-03-30|2014-03-04|Daniel Luch|Collector grid and interconnect structures for photovoltaic arrays and modules|
    US8822810B2|2006-04-13|2014-09-02|Daniel Luch|Collector grid and interconnect structures for photovoltaic arrays and modules|
    JP4345183B2|1999-12-20|2009-10-14|ソニー株式会社|Electric appliances|
    JP4036616B2|2000-01-31|2008-01-23|三洋電機株式会社|Solar cell module|
    JP3809056B2|2000-09-14|2006-08-16|新光電気工業株式会社|IC card|
    US20050061524A1|2001-01-23|2005-03-24|Hagan Todd A.|Housing with functional overmold|
    JP4250909B2|2002-05-20|2009-04-08|ソニー株式会社|Semiconductor element separation method and transfer method|
    JP5168500B2|2009-02-13|2013-03-21|信越化学工業株式会社|Solar cell and method for manufacturing solar cell|
    US8946547B2|2010-08-05|2015-02-03|Solexel, Inc.|Backplane reinforcement and interconnects for solar cells|
    US9356172B2|2010-09-16|2016-05-31|Lg Innotek Co., Ltd.|Solar cell and method for manufacturing same|
    FR2969312B1|2010-12-20|2013-01-18|Rhodia Acetow Gmbh|PHOTOVOLTAIC MODULE|
    法律状态:
    2007-03-23| FPAY| Fee payment|Year of fee payment: 4 |
    2011-05-02| REMI| Maintenance fee reminder mailed|
    2011-09-23| LAPS| Lapse for failure to pay maintenance fees|
    2011-10-24| STCH| Information on status: patent discontinuation|Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
    2011-11-15| FP| Expired due to failure to pay maintenance fee|Effective date: 20110923 |
    优先权:
    申请号 | 申请日 | 专利标题
    JPP10-300113||1998-10-21||
    JP10300113A|JP2000124341A|1998-10-21|1998-10-21|Semiconductor device and its manufacture|
    JP10-300113||1998-10-21||
    US09/419,936|US6222118B1|1998-10-21|1999-10-18|Semiconductor device and method of manufacturing the same|
    US09/800,879|US6624050B2|1998-10-21|2001-03-07|Method of manufacturing semiconductor device|US09/800,879| US6624050B2|1998-10-21|2001-03-07|Method of manufacturing semiconductor device|
    [返回顶部]