• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method for fabricating floating gate semiconductor devices, such as flash EEPROMs, and flash EEPROM memory arrays, is provided. The method includes providing a semiconductor substrate and forming active areas on the substrate. Each active area includes elements of a field effect transistor (FET) including a source, a drain, a channel region, and a gate dielectric layer. Trench isolation structures are also formed in the substrate for electrically isolating the active areas. In addition, a conductive layer (e.g., polysilicon) is deposited on the active areas, and chemically mechanically planarized to an endpoint of the trench isolation structures to form self aligned floating gates on the active areas. Control gate dielectric layers, and control gates are then formed on the floating gates.
    公开号:US20010002714A1
    申请号:US09/536,928
    申请日:2000-03-27
    公开日:2001-06-07
    发明作者:Trung Doan
    申请人:Doan Trung Tri；
    IPC主号:H01L29-66825
    专利说明:
    [0001] This application is a continuation-in-part of application Ser. No. 08/909,713, filed Aug. 12, 1997, which is a division of application Ser. No. 08/532,997, filed Sep. 25, 1995, U.S. Pat. No. 5,767,005, which is a continuation-in-part of application Ser. No. 08/098,449, filed Jul. 27, 1993, abandoned. [0001] FIELD OF THE INVENTION
    [0002] This invention relates generally to semiconductor manufacture, and more particularly to an improved method for fabricating floating gate semiconductor devices with trench isolation structures and self aligned floating gates. The method is particularly suited to the formation of non-volatile read only memories, such as flash EEPROMs. [0002] BACKGROUND OF THE INVENTION
    [0003] Semiconductor memory arrays can be fabricated using floating gates (i.e., unconnected gates) that control current flow through the devices of the array. One type of floating gate device used to construct memory arrays is referred to as a flash EEPROM (electrically erasable programmable read only memory). [0003]
    [0004] A flash EEPROM memory array includes multiple cells that can be erased using a single erasing operation. Typically, a flash EEPROM cell includes a floating gate, that controls current flow through a channel region of a field effect transistor (FET). The floating gate is separated from a source and drain of the FET by a thin gate oxide layer. The flash EEPROM cell also includes an elongated control gate located in a direction transverse to the source and drain of the FET. The control gates can be the word lines, and the sources and drains of the FETs can be the bit lines of the memory array. [0004]
    [0005] In operation of the flash EEPROM cell, the presence of electrons in the floating gate alters the normal operation of the FET, and the flow of electrons between the source and drain of the FET. Programming of the flash EEPROM can be accomplished by hot-electron injection into the floating gate. With one type of EEPROM cell, the erasing mechanism can be electron tunneling off the floating gate to the substrate. In a memory array with this type of EEPROM cell, the individual cells are electrically isolated from one another such that the individual cells can be selectively erased. [0005]
    [0006] Conventional floating gate arrays, such as flash EEPROM arrays, utilize a thermally grown field oxide (FOX) to electrically isolate adjacent cells in the array. One problem with a thermally grown field oxide is that the surface of the field oxide has a non-planar topography. With a non-planar topography, the size and spacing of features on subsequently deposited and patterned layers, such as interconnect layers, is limited by the depth of focus of conventional photolithography exposure tools. This limits the feature sizes of the array. [0006]
    [0007] Another problem with field oxide isolation is that the source and drain regions of the FETs of the array can be degraded due to exposure to temperature cycles during growth of the field oxide. This can cause the source and drain regions to become less efficient in the generation of hot electrons for injection through the gate oxide layer into the floating gate. [0007]
    [0008] Another consideration in the formation of floating gate devices is the alignment of the floating gates relative to other elements of the device. For example, one type of flash EEPROM cell has a floating gate which extends across the channel region of an FET. Alignment of the floating gate to the channel region requires a critical alignment step. Consequently the floating gates of flash EEPROMs have sometimes been made larger than necessary to insure alignment of the floating gates with the channel regions. In addition to alignment, a thickness of the floating gates is a critical dimension that can affect capacitive coupling between the floating gates and the control gates of flash EEPROMs. In the past the thickness of the floating gates has been difficult to control, and the floating gates have been made thicker than necessary. [0008]
    [0009] The present invention is directed to a method for fabricating floating gate devices in which trench isolation, such as shallow trench isolation (STI), rather than a thermally grown field oxide, is used to electrically isolate adjacent cells. In addition, the method employs chemical mechanical planarization (CMP) to self align the floating gates relative to other elements of the devices. [0009] SUMMARY OF THE INVENTION
    [0010] In accordance with the present invention, a method for fabricating a floating gate semiconductor device, and an improved floating gate semiconductor device, are provided. In an illustrative embodiment the method is used to fabricate a flash EEPROM cell, and a flash EEPROM memory array. [0010]
    [0011] The method, simply stated, comprises: providing a semiconductor substrate; forming active areas in the substrate; forming trench isolation structures on the substrate for isolating the active areas; forming a gate dielectric layer on the active areas; forming floating gates on the gate dielectric layer by chemically mechanically planarizing a blanket deposited conductive layer to an endpoint of the trench isolation structures; and then forming a control gate dielectric layer and control gates on the floating gates. [0011]
    [0012] Initially, a semiconductor substrate (e.g., silicon) can be provided and active areas formed in the substrate. Each active area can include elements of a field effect transistor (e.g., source, drain, channel region). Following formation of the active areas, a sacrificial oxide layer, and a mask layer, can be formed on the substrate. The mask layer can then be patterned using a resist mask, to form a hard mask, which can be used to etch isolation trenches in the substrate. [0012]
    [0013] Next, a trench fill material, such as SiO[0013] 2, can be deposited into the isolation trenches to form electrically insulating plugs. Following formation, the trench fill material can be removed to an endpoint of the mask layer preferably using chemical mechanical planarization (CMP). The mask layer can then be removed, leaving the trench fill material in each trench. With the mask layer removed, the trench fill material within each trench is higher than a surface of the substrate, such that recesses are formed which at least partially enclose each active area.
    [0014] Following formation of the trench isolation structures, a gate dielectric layer can be formed on the active areas. In addition, a first conductive layer can be blanket deposited on the gate dielectric layer and partially removed and planarized preferably using CMP, to an endpoint of the trench fill material. The planarized conductive layer partially defines floating gates on the gate dielectric layer which are self aligned to the active areas. Next, a control gate dielectric layer can be deposited on the floating gates and on the trench fill material. A second conductive layer can then be deposited on the control gate dielectric layer and patterned to form control gates. During patterning of the second conductive layer, the planarized conductive layer can also be patterned to complete the floating gates. [0014]
    [0015] The completed memory array includes rows and columns of flash EEPROM cells. Each flash EEPROM cell includes a FET with a source and drain, a gate dielectric layer on the source and drain, a self aligned floating gate on the gate dielectric layer, a control gate dielectric layer on the floating gate, and a control gate on the control gate dielectric layer. Trench isolation structures electrically isolate adjacent cells, and the floating gates of adjacent cells. In addition, the sources and drains of the FETs form the bit lines of the memory array, and the control gates form the word lines of the memory array. [0015]
    [0016] Alternately the control gate dielectric layer can be deposited on the conductive layer prior to the chemical mechanical planarization step. The chemical mechanical planarization step can then be performed to planarize the control gate dielectric layer and the conductive layer. [0016] BRIEF DESCRIPTION OF THE DRAWINGS
    [0017] FIGS. [0017] 1A-1G are schematic cross sectional views illustrating steps in a method for fabricating a flash EEPROM cell in accordance with the invention;
    [0018] FIG. 2 is a schematic cross sectional view taken along section line [0018] 2-2 of FIG. 1B;
    [0019] FIG. 3 is a schematic cross sectional view taken along section line [0019] 3-3 of FIG. 1D;
    [0020] FIG. 4 is a schematic cross sectional view taken along section line [0020] 4-4 of FIG. 1F;
    [0021] FIG. 5 is a schematic cross sectional view taken along section line [0021] 5-5 of FIG. 1G;
    [0022] FIG. 5A is a cross sectional view taken along section line [0022] 5A-5A of FIG. 5;
    [0023] FIG. 6 is an electrical schematic of a flash EEPROM memory array constructed in accordance with the invention; [0023]
    [0024] FIG. 7 is a schematic cross sectional view of the flash EEPROM cell during a write operation; and [0024]
    [0025] FIG. 8 is a schematic cross sectional view of the flash EEPROM cell during an erase operation. [0025] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
    [0026] Referring to FIGS. [0026] 1A-1G, steps in the method of the invention are illustrated for forming a floating gate device comprising a flash EEPROM cell.
    [0027] Initially, as shown in FIG. 1A, a semiconductor substrate [0027] 10 can be provided. Preferably, the substrate 10 comprises monocrystalline silicon. The substrate 10 includes a pattern of active areas 12 comprising spaced apart source/drain regions 14. The active areas 12 and source/drain regions 14 can be formed by implanting one or more dopants into the substrate 10 using techniques that are known in the art (e.g., masking and ion implantation).
    [0028] As also shown in FIG. 1A, a sacrificial oxide layer [0028] 22 can be formed on the substrate 10. One suitable material for the sacrificial oxide layer 22 comprises SiO2 deposited using a CVD process with a silicon containing precursor such as TEOS (tetraethyl orthosilicate). A representative thickness for the sacrificial oxide layer 22 can be from 50 Å to 2000 Å.
    [0029] As also shown in FIG. 1A, a mask layer [0029] 16 can be formed on the sacrificial oxide layer 22. One suitable material for the mask layer 16 comprises silicon nitride (Si3N4) deposited by CVD. A representative thickness for the mask layer 16 can be from 300 Å to 3000 Å.
    [0030] Next as shown in FIG. 1B, the mask layer [0030] 16 can be patterned and etched to form a hard mask 16A. A photopatterned layer of resist (not shown) can be used to pattern and etch the mask layer 16 to form the hard mask 16A. The hard mask 16A includes a pattern of openings 18 that are sized and shaped for etching isolation trenches 20 in the substrate 10.
    [0031] Following formation of the hard mask [0031] 16A, the isolation trenches 20 can be etched into the substrate 10 to a desired depth “D”. One method for etching the isolation trenches 20 comprises an anisotropic dry etch process, such as reactive ion etching (RIE), using a suitable etchant, such as a species of Cl. In FIG. 1B, the isolation trenches 20 have sloped sidewalls as is consistent with an anisotropic etch process. Rather than dry etching the isolation trenches 20, an isotropic wet etch with a wet etchant can be employed. A suitable wet etchant for a silicon substrate comprises a mixture of HF, HNO3, and H2O.
    [0032] The etch process can be controlled to etch the isolation trenches [0032] 20 in the substrate 10 to a desired depth D. Preferably, the isolation trenches 20 comprise shallow trenches (i.e., D is less than about 1 μm). However, the isolation trenches 20 can also comprise moderate depth trenches (i.e., D is from about 1 to 3 μm), or deep trenches (i.e., trenches greater than about 3 μm). A peripheral shape and location of the trenches 20 is controlled by a peripheral shape and location of the openings 18 in the hard mask 16A. As shown in FIG. 2, the isolation trenches 20 can be elongated, parallel, spaced rectangles. Alternately the isolation trenches can be any other required shape (e.g., squares, elongated ovals).
    [0033] Following etching of the isolation trenches [0033] 20, and as shown in FIG. 1C, an insulating layer 24 can be formed within the isolation trenches 20. One suitable material for the insulating layer 24 comprises SiO2 formed using a thermal oxidation process (e.g., heating in an oxygen containing ambient). The insulating layer 24 can remove damage caused by high energy ion bombardment during the trench etching step. In addition, the insulating layer 24 can round sharp corners at the bottoms of the isolation trenches 20. A representative thickness for the insulating layer 24 can be from 50 Å to 1000 Å.
    [0034] As also shown in FIG. 1C, the isolation trenches [0034] 20 can be filled with a trench fill material 26 to form insulating plugs. One suitable material for the insulating layer 24 comprises SiO2 deposited using a CVD process with a silicon containing precursor such as TEOS (tetraethyl orthosilicate). Alternately the trench fill material 26 can comprise BPSG, a nitride or other suitable electrically insulating material. In addition to filling the isolation trenches 20, the trench fill material 26 also fills the openings 18 in the hard mask 16A.
    [0035] As also shown in FIG. 1C, following deposition thereof, the trench fill material [0035] 26 can be planarized to an endpoint of the hard mask 16A using chemical mechanical planarization (CMP). Following the CMP process, a surface 28 of the trench fill material 26 and hard mask 16A are substantially co-planar to one another.
    [0036] One suitable CMP apparatus for performing the CMP step comprises a Model 372 manufactured by Westech. By way of example, the following parameters can be maintained during the CMP process: [0036] Pressure 1 psi to 5 psi Slurry Composition Silica or Cesium Oxide based Slurry Rate 1 milliliters per minute to 200 milliliters per minute RPM 5 to 50 Polishing Pad Rodel Polytex Supreme Etch Rate 100 Å to 4000 Å/mm.
    [0037] Referring to FIG. 1D, following planarization of the trench fill material [0037] 26, the hard mask 16A can be stripped. A hard mask 16A comprised of Si3N4 can be stripped using a wet etchant, such as H3PO4.
    [0038] The sacrificial oxide [0038] 22 can also be stripped. For a sacrificial oxide 22 comprised of SiO2, a solution of HF can be used to strip the sacrificial oxide 22. With the sacrificial oxide 22 stripped, a gate dielectric layer 38 can be formed on the substrate 10. For example, the gate dielectric layer 38 can comprise SiO2 having a thickness of about 30 Å to 800 Å and formed using a CVD or thermal growth process. Alternately, instead of SiO2, the gate dielectric layer 38 can comprise a nitride (e.g., Si3N4), an oxynitride (e.g., NO) or another oxide (e.g., Ta2O5).
    [0039] The completed trench isolation structures [0039] 30 have a height “H” measured from a surface 32 of the gate dielectric layer 38. Stated differently, the trench isolation structures 30 are higher than the surface 32. In addition, the height “H” is approximately equal to a thickness “T” (FIG. 1C) of the planarized hard mask 16A.
    [0040] As also shown in FIG. 1D, adjacent trench isolation structures [0040] 30 form a recess 34. As shown in FIG. 3, the recess 34 at least partially encloses the active area 12 located between adjacent trench isolation structures 30.
    [0041] Referring to FIG. 1E, a first conductive layer [0041] 36 can be blanket deposited over the gate dielectric layer 38 and over the trench isolation structures 30. In addition, the first conductive layer 36 extends into the recesses 34 defined by the parallel spaced trench isolation structures 30. The first conductive layer 36 can comprise doped polysilicon deposited to a desired thickness using CVD. Alternately, the first conductive layer 36 can comprise a metal such as titanium, tungsten, tantalum, molybdenum or alloys of these metals. Preferably, the first conductive layer 36 has a thickness “T1” that is equal to or less than a height “H” of the trench isolation structures 30.
    [0042] Referring to FIG. 1F, following blanket deposition, the first conductive layer [0042] 36 can be planarized to an endpoint 40 of the trench isolation structures 30 to form a planarized first conductive layer 36A. As shown in FIG. 4, the planarized first conductive layer 36A substantially covers the recesses 34. In addition, the planarized first conductive layer 36A can be considered as self aligned to the active areas 12 which are located under the recesses 34. However, the first conductive layer 36 has been removed from the trench isolation structures 30. During a patterning step to be subsequently described, the self aligned and planarized first conductive layer 36A will be patterned to form floating gates 50 (FIG. 5).
    [0043] Planarization of the first conductive layer [0043] 36 can be accomplished using a chemical mechanical planarization process, substantially as previously described. Endpoint detection can be accomplished by techniques that are known in the art, such as direct measurement, or approximations based on experimental data, and known process conditions.
    [0044] Referring to FIG. 1G, a control gate dielectric layer [0044] 42 can be deposited on the planarized first conductive layer 36A. The control gate dielectric layer 42 can comprise SiO2 deposited to a desired thickness using a CVD or thermal growth process as previously described. A representative thickness for the control gate dielectric layer 42 can be from 10 Å to 1000 Å. Alternately, instead of SiO2, the control gate dielectric layer 42 can comprise a nitride (e.g., Si3N4), an oxynitride (e.g., NO) or another oxide (e.g., Ta2O5).
    [0045] Following formation of the control gate dielectric layer [0045] 42, a mask (not shown) can be formed on the substrate 10 for removing unwanted portions of the control gate dielectric layer 42. By way of example, the mask (not shown) can comprise a nitride hard mask as previously described formed using techniques that are known in the art. Open areas of the mask (not shown) can align with peripheral devices of the array that do not require a floating gate. The mask (not shown) can be described as a non-critical mask because satisfactory alignment of the relatively large areas involved can be effected without introducing alignment errors. A suitable wet etchant such as HF can be used to remove unwanted portions of the control gate dielectric layer 42.
    [0046] Alternately, the control gate dielectric layer [0046] 42 can be deposited prior to chemical mechanical planarization of the first conductive layer 36. In this case the control gate dielectric layer 42 would then be chemically mechanically planarized with the first conductive layer 36.
    [0047] As also shown in FIG. 1G, a second conductive layer [0047] 44 can be deposited on the first conductive layer and on the patterned control gate dielectric layer 42. The second conductive layer 44 can comprise polysilicon deposited using a CVD process as previously described. Alternately the second conductive layer 44 can comprise a metal as previously described.
    [0048] Following deposition, the second conductive layer [0048] 44 can be patterned and etched to form control gates 48 (FIG. 5) and word lines WL (FIG. 5). At the same time that the second conductive layer 44 is patterned and etched, the planarized first conductive layer 36A can also be patterned and etched to define floating gates 50 (FIG. 5A). A dry etch process using a mask (not shown) and a suitable etching species can be used to etch the control gates 48 and the floating gates 50. As shown in FIG. 5A, the active areas 12 on the substrate 10 include the control gates 48 and the floating gates 50, separated by the control gate dielectric layer 42. Conventional semiconductor processes (i.e., forming interconnect and passivation layers) can now be used to complete the device.
    [0049] Referring to FIG. 6, a memory array [0049] 46 constructed using the method outlined in FIGS. 1A-1G is illustrated. The memory array 46 includes rows and columns of floating gate cells 56. In the illustrative embodiment, each floating gate cell 56 comprises a flash EEPROM. Each floating gate cell 56 comprises an FET 52 formed by an active area 12 (FIG. 1A) on the substrate 10.
    [0050] Each FET [0050] 52 includes a source “S”, and a drain “D”, formed by the source/drain regions 14 (FIG. 1A) on the substrate 10. In addition, each FET 52 in the memory array 46 includes a floating gate 50 and a control gate 48. The planarized first conductive layer 36A (FIG. 1F) forms the floating gates 50. The patterned second conductive layer 44 forms the control gates 48 and the word lines (WL0, WL1, WL2 . . . ) of the memory array 46. The sources S and drains D of the FETs 52 form the bit lines (BL0, BL1 . . . ) of the memory array 46.
    [0051] Referring to FIGS. 7 and 8, operational characteristics of a floating gate cell [0051] 56 are illustrated. FIG. 7 illustrates the floating gate cell 56 during a WRITE operation. During a WRITE, a high programming voltage (e.g., VPP= 12 V) is placed on the control gate 48. The high programming voltage forms an inversion region 54 in the substrate 10 which in the illustrative embodiment comprise P-silicon. At the same time the drain voltage (VD) is increased to about half the programming voltage (e.g., VD=0.5 VPP= 6 V), while the source is grounded (0 volts). With the inversion region 54 formed, the current between the drain D and source S increases. The resulting high electron flow from source S to drain D increases the kinetic energy of electrons 58. This causes the electrons 58 to gain enough energy to cross the gate dielectric layer 38 and collect on the floating gate 50.
    [0052] After the WRITE is completed, the negative charge on the floating gate [0052] 50 raises the cell's threshold voltage (VT) above the word line logic 1 voltage. When a written cell's word line is brought to a logic 1 during a READ, the cell will not turn on. Sense amps (not shown) associated with the memory array 46 amplify the cell current and output a 0 for a written cell.
    [0053] FIG. 8 illustrates the floating gate cell [0053] 56 during an ERASE operation. In this mode Fowler-Nordheim tunneling removes charge from the floating gate 50 to bring it to the erased state. Using a high-voltage source erase, the source is brought to a high voltage (VPP= 12 V) , the control gate 48 is grounded (0 volt) and the drain D is left unconnected. The large positive voltage on the source, as compared to the floating gate 50, attracts the negatively charged electrons from the floating gate 50 though the gate dielectric layer 38 to the source. Because the drain D is not connected, the ERASE function is a much lower current per cell operation than a WRITE that uses hot electron injection.
    [0054] After the ERASE is completed, the lack of charge on the floating gate [0054] 50 lowers the cells VT below the word line logic 1 voltage. When an erased cell's word line is brought to a logic 1 during a READ, the FET 56 will turn on and conduct more current than a written cell.
    [0055] During a READ of a byte or word of data, the addressed row (word line) is brought to a logic 1 level (>V[0055] T of an erased cell). This condition turns on erased cells which allow current to flow from drain D to source S, while written cells remain in the off state with little current flow from drain D to source S. The cell current is detected by the sense amps and amplified to the appropriate logic level to the outputs.
    [0056] Thus the invention provides an improved method for fabricating floating gage semiconductor devices such as flash EEPROMs and flash EEPROM memory arrays. The invention also provides improved floating gate semiconductor devices, and improved memory arrays. [0056]
    [0057] Although the invention has been described with reference to certain preferred embodiments, as will be apparent to those skilled in the art, certain changes and modifications can be made without departing from the scope of the invention as defined by the following claims. [0057]
    权利要求:
    Claims (32)
    [1" id="US-20010002714-A1-CLM-00001] 1. A method for fabricating a semiconductor device comprising:
    providing a substrate comprising an active area;
    forming a trench isolation structure on the substrate to electrically isolate the active area;
    forming a gate dielectric layer on the active area;
    forming a conductive layer on the gate dielectric layer; and
    at least partially removing the conductive layer to an endpoint of the trench isolation.
    [2" id="US-20010002714-A1-CLM-00002] 2. The method of
    claim 1 further comprising following the removing step, forming a control gate on the conductive layer.
    [3" id="US-20010002714-A1-CLM-00003] 3. The method of
    claim 1 wherein the removing step comprises chemical mechanical planarization.
    [4" id="US-20010002714-A1-CLM-00004] 4. The method of
    claim 1 wherein the trench isolation structure comprise a trench at least partially filled with an electrically insulating material.
    [5" id="US-20010002714-A1-CLM-00005] 5. A method for fabricating a semiconductor device comprising:
    providing a substrate comprising an active area having a surface;
    etching a trench in the substrate proximate the active area;
    forming an electrically insulating material in the trench to electrically isolate the active area, the material being higher than the surface;
    forming a gate dielectric layer on the active area;
    forming a conductive layer on the gate dielectric layer and on the material;
    chemically mechanically planarizing the conductive layer and the material to at least partially define a floating gate on the active area; and
    forming a control gate on the floating gate.
    [6" id="US-20010002714-A1-CLM-00006] 6. The method of
    claim 6 wherein etching the trench comprises forming a mask on the substrate having a thickness equal to a height of the material with respect to the surface.
    [7" id="US-20010002714-A1-CLM-00007] 7. The method of
    claim 6 wherein the active area comprises a source and a drain of a field effect transistor.
    [8" id="US-20010002714-A1-CLM-00008] 8. A method for fabricating a semiconductor device comprising:
    providing a substrate comprising an active area having a surface;
    forming a first trench isolation structure on a first side of the active area, and a second trench isolation structure on a second side of the active area, to define a recess at least partially enclosing the active area;
    forming a gate dielectric layer on the active area;
    forming a conductive layer in the recess and on the first and second trench isolation structure;
    chemically mechanically planarizing the conductive layer and the first and second trench isolation structure to at least partially define a floating gate on the active area;
    following chemically mechanically planarizing, forming a control gate dielectric layer on the conductive layer;
    forming a second conductive layer on the conductive layer; and
    etching the second conductive layer and the conductive layer to form the floating gate with a control gate thereon.
    [9" id="US-20010002714-A1-CLM-00009] 9. The method of
    claim 8 further comprising forming a control gate dielectric layer between the conductive layer and the second conductive layer.
    [10" id="US-20010002714-A1-CLM-00010] 10. The method of
    claim 8 further comprising forming a control gate dielectric layer between the conductive layer and the second conductive layer and planarizing the control gate dielectric layer during the planarizing step.
    [11" id="US-20010002714-A1-CLM-00011] 11. A method for fabricating a semiconductor device comprising:
    providing a substrate comprising an active area having a surface;
    forming a first trench isolation structure on a first side of the active area, and a second trench isolation structure on a second side of the active area, to define a recess at least partially enclosing the active area;
    forming a gate dielectric layer on the active area;
    forming a conductive layer in the recess and on the first and second trench isolation structure;
    chemically mechanically planarizing the conductive layer to an endpoint of the first and second trench isolation structure to at least partially define a floating gate on the active area;
    following planarizing, forming a control gate dielectric layer on the conductive layer;
    depositing a second conductive layer on the control gate dielectric layer; and
    etching the second conductive layer, the control gate dielectric layer, and the conductive layer to form the floating gate with a control gate thereon.
    [12" id="US-20010002714-A1-CLM-00012] 12. A method for fabricating a semiconductor memory array comprising:
    providing a substrate comprising a plurality of active areas for field effect transistors;
    forming a plurality of trench isolation structures in the substrate for electrically isolating the active areas, the trench isolation structures at least partially enclosing the active areas and being higher than a surface of the active areas;
    forming a gate dielectric layer on the active areas;
    depositing a conductive layer on the gate dielectric layer and on the trench isolation structures;
    removing the first conductive layer to an endpoint of the trench isolation structures; and
    following removing, etching the conductive layer to define floating gates on the active areas.
    [13" id="US-20010002714-A1-CLM-00013] 13. The method of
    claim 12 further comprising forming control gate dielectric layers on the floating gates and control gates on the control gate dielectric layers.
    [14" id="US-20010002714-A1-CLM-00014] 14. The method of
    claim 12 wherein the removing step comprises chemical mechanical planarization.
    [15" id="US-20010002714-A1-CLM-00015] 15. A method for fabricating a semiconductor memory array comprising:
    providing a substrate comprising a plurality of active areas;
    forming a plurality of trench isolation structures in the substrate for electrically isolating the active areas, the trench isolation structures at least partially enclosing the active areas and being higher than a surface of the substrate;
    forming a first dielectric layer on the substrate;
    depositing a first conductive layer on the first dielectric layer and trench isolation structures;
    chemically mechanically planarizing the first conductive layer and the trench isolation structures;
    forming a second dielectric layer on the first conductive layer;
    depositing a second conductive layer on the second dielectric layer; and
    etching the second conductive layer and the first conductive layer to form control gates and floating gates on the active areas.
    [16" id="US-20010002714-A1-CLM-00016] 16. The method of
    claim 15 wherein the active areas comprise source regions and drain regions for field effect transistors and configured as bit lines for the array.
    [17" id="US-20010002714-A1-CLM-00017] 17. The method of
    claim 15 wherein the control gates comprise word lines for the array.
    [18" id="US-20010002714-A1-CLM-00018] 18. The method of
    claim 15 wherein the trench isolation structures comprise etched trenches having a depth of less than 1 μm.
    [19" id="US-20010002714-A1-CLM-00019] 19. The method of
    claim 15 wherein the trench isolation structures comprise etched trenches having a depth of greater than 1 μm.
    [20" id="US-20010002714-A1-CLM-00020] 20. The method of
    claim 15 wherein the memory array comprises a flash EEPROM memory array.
    [21" id="US-20010002714-A1-CLM-00021] 21. A floating gate memory device comprising:
    a semiconductor substrate;
    a field effect transistor on the substrate comprising a source and a drain;
    a chemically mechanically planarized trench isolation structure in the substrate electrically isolating the field effect transistor;
    a first dielectric layer on the active area;
    a chemically mechanically planarized conductive layer on the first dielectric layer configured as a floating gate;
    a second dielectric layer on the conductive layer; and
    a second conductive layer on the second dielectric layer configured as a control gate.
    [22" id="US-20010002714-A1-CLM-00022] 22. The device of
    claim 21 wherein the trench isolation structure comprises an etched trench having a depth of less than 1 μm.
    [23" id="US-20010002714-A1-CLM-00023] 23. The device of
    claim 21 wherein the trench isolation structure comprises an etched trench having a depth of greater than 1 μm.
    [24" id="US-20010002714-A1-CLM-00024] 24. A floating gate memory device comprising:
    a semiconductor substrate having a surface;
    a field effect transistor on the substrate comprising a gate dielectric layer;
    a trench isolation structure in the substrate electrically isolating the field effect transistor and comprising a trench filled with an electrically insulating material having an endpoint higher than the surface;
    a floating gate on the gate dielectric layer comprising a conductive layer chemically mechanically planarized to the endpoint of the material;
    a control gate dielectric layer on the floating gate; and
    a control gate on the control gate dielectric layer.
    [25" id="US-20010002714-A1-CLM-00025] 25. The device of
    claim 24 wherein the transistor comprises a source and a drain and the floating gate covers the source and the drain.
    [26" id="US-20010002714-A1-CLM-00026] 26. The device of
    claim 24 wherein the device is contained in a memory with a plurality of floating gate devices.
    [27" id="US-20010002714-A1-CLM-00027] 27. The device of
    claim 24 wherein the device comprises a flash EEPROM.
    [28" id="US-20010002714-A1-CLM-00028] 28. A semiconductor memory array comprising:
    a semiconductor substrate;
    a plurality of field effect transistors on the substrate;
    a plurality of trench isolation structures on the substrate comprising etched trenches filled with an insulating material; and
    a plurality of floating gates on the substrate comprising a conductive layer chemically mechanically planarized to an endpoint of the insulating material.
    [29" id="US-20010002714-A1-CLM-00029] 29. The memory array of
    claim 28 further comprising a plurality of control gates separated from the floating gates by a first dielectric layer.
    [30" id="US-20010002714-A1-CLM-00030] 30. The memory array of
    claim 28 further comprising a second dielectric layer on the substrate separating the floating gates from the substrate.
    [31" id="US-20010002714-A1-CLM-00031] 31. A semiconductor memory array comprising:
    a semiconductor substrate comprising a gate dielectric layer;
    a plurality of field effect transistors on the substrate comprising sources and drains electrically connected to form bit lines;
    a plurality of trench isolation structures on the substrate comprising etched trenches and electrically insulating plugs having a height with respect to the gate dielectric layer;
    a plurality of floating gates on the substrate comprising a plurality of conductive layers chemically mechanically planarized to an endpoint of the insulating plugs;
    a plurality of control gate dielectric layers on the floating gates; and
    a plurality of control gates on the control gate dielectric layers and configured as word lines.
    [32" id="US-20010002714-A1-CLM-00032] 32. The memory array of
    claim 31 wherein the memory array comprises a flash EEPROM memory array.
    类似技术:
    公开号 | 公开日 | 专利标题
    US6281103B1|2001-08-28|Method for fabricating gate semiconductor
    JP3615765B2|2005-02-02|Manufacturing method of read-only memory cell device
    US6420249B1|2002-07-16|Method for fabricating a floating gate semiconductor device
    US6117733A|2000-09-12|Poly tip formation and self-align source process for split-gate flash cell
    US6238976B1|2001-05-29|Method for forming high density flash memory
    US7049180B2|2006-05-23|Method of fabricating a memory transistor array utilizing insulated word lines as gate electrodes
    US6743675B2|2004-06-01|Floating gate memory fabrication methods comprising a field dielectric etch with a horizontal etch component
    US6259131B1|2001-07-10|Poly tip and self aligned source for split-gate flash cell
    US6309928B1|2001-10-30|Split-gate flash cell
    US6700143B2|2004-03-02|Dummy structures that protect circuit elements during polishing
    JP2006513576A|2006-04-20|Improved floating gate insulation and floating gate manufacturing method
    JP2008053651A|2008-03-06|Nonvolatile semiconductor memory device
    KR20000048526A|2000-07-25|Self-aligned non-volatile storage cell
    US7956396B2|2011-06-07|Memory array having floating gate semiconductor device
    JP4053232B2|2008-02-27|Semiconductor integrated circuit device and manufacturing method thereof
    CN108109656B|2020-10-27|Flash memory array and manufacturing method thereof
    US7696094B2|2010-04-13|Method for improved planarization in semiconductor devices
    US7183163B2|2007-02-27|Method of manufacturing an isolation-less, contact-less array of bi-directional read/program non-volatile floating gate memory cells with independent controllable control gates
    KR20000076852A|2000-12-26|Semiconductor memory device and method of manufacturing the same
    US8728907B2|2014-05-20|Methods for fabricating an integrated circuit arrangement comprising isolating trenches and a field effect transistor
    CN112185815A|2021-01-05|Method of forming split gate flash memory cells with spacer defined floating gates and discretely formed polysilicon gates
    US7985687B1|2011-07-26|System and method for improving reliability in a semiconductor device
    JP6282291B2|2018-02-21|Nonvolatile memory cell having charge trap layer in trench, array, and manufacturing method thereof
    TWI724634B|2021-04-11|Memory cell with floating gate, coupling gate and erase gate, and method of making same
    US7163862B1|2007-01-16|Semiconductor memory devices and methods for fabricating the same
    同族专利:
    公开号 | 公开日
    US6281103B1|2001-08-28|
    US6271561B2|2001-08-07|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US6461916B1|1997-03-28|2002-10-08|Hitachi, Ltd.|Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the device|
    US6475894B1|2002-01-18|2002-11-05|Nanya Technology Corporation|Process for fabricating a floating gate of a flash memory in a self-aligned manner|
    US6498064B2|2001-05-14|2002-12-24|Vanguard International Semiconductor Corporation|Flash memory with conformal floating gate and the method of making the same|
    FR2834126A1|2001-12-22|2003-06-27|Hynix Semiconductor Inc|Manufacture of self-aligned floating gate in flash memory cell by forming capping layer on trench insulating film, and performing etching process to etch the trench insulating film to desired dimension|
    US6943071B2|1999-12-03|2005-09-13|Intel Corporation|Integrated memory cell and method of fabrication|
    US20050287763A1|2004-06-29|2005-12-29|Taek-Jung Kim|Method of manufacturing a semiconductor device|
    US20070187799A1|2006-02-16|2007-08-16|Toshiharu Tanaka|Semiconductor device and method of manufacturing the same|
    US20080067571A1|2006-09-18|2008-03-20|Kim Chang-Seob|Semiconductor memory device and method of manufacturing the same|US4818725A|1986-09-15|1989-04-04|Harris Corp.|Technique for forming planarized gate structure|
    US4833094A|1986-10-17|1989-05-23|International Business Machines Corporation|Method of making a dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes|
    US4997781A|1987-11-24|1991-03-05|Texas Instruments Incorporated|Method of making planarized EPROM array|
    FR2635410B1|1988-08-11|1991-08-02|Sgs Thomson Microelectronics|HIGH INTEGRATED EPROM-TYPE MEMORY WITH MESH ORGANIZATION AND IMPROVED COUPLING FACTOR AND MANUFACTURING METHOD|
    US5292673A|1989-08-16|1994-03-08|Hitachi, Ltd|Method of manufacturing a semiconductor device|
    JP2825585B2|1990-01-29|1998-11-18|株式会社日立製作所|Semiconductor integrated circuit device and method of manufacturing the same|
    US5032881A|1990-06-29|1991-07-16|National Semiconductor Corporation|Asymmetric virtual ground EPROM cell and fabrication method|
    JP2685373B2|1991-06-28|1997-12-03|シャープ株式会社|Manufacturing method of nonvolatile semiconductor memory device|
    US5196353A|1992-01-03|1993-03-23|Micron Technology, Inc.|Method for controlling a semiconductor process by measuring a surface temperature and developing a thermal image of the wafer|
    EP0552531B1|1992-01-22|2000-08-16|Macronix International Co., Ltd.|Non-volatile memory cell and array architecture|
    US5315142A|1992-03-23|1994-05-24|International Business Machines Corporation|High performance trench EEPROM cell|
    JPH05326978A|1992-05-21|1993-12-10|Rohm Co Ltd|Semiconductor memory and manufacture therefor|
    US5279234A|1992-10-05|1994-01-18|Chiptec Wood Energy Systems|Controlled clean-emission biomass gasification heating system/method|
    US5270234A|1992-10-30|1993-12-14|International Business Machines Corporation|Deep submicron transistor fabrication method|
    US5433794A|1992-12-10|1995-07-18|Micron Technology, Inc.|Spacers used to form isolation trenches with improved corners|
    US5767005A|1993-07-27|1998-06-16|Micron Technology, Inc.|Method for fabricating a flash EEPROM|
    US5521108A|1993-09-15|1996-05-28|Lsi Logic Corporation|Process for making a conductive germanium/silicon member with a roughened surface thereon suitable for use in an integrated circuit structure|
    US5407534A|1993-12-10|1995-04-18|Micron Semiconductor, Inc.|Method to prepare hemi-spherical grain silicon using a fluorine based gas mixture and high vacuum anneal|
    US5705415A|1994-10-04|1998-01-06|Motorola, Inc.|Process for forming an electrically programmable read-only memory cell|
    US5622881A|1994-10-06|1997-04-22|International Business Machines Corporation|Packing density for flash memories|
    US5616513A|1995-06-01|1997-04-01|International Business Machines Corporation|Shallow trench isolation with self aligned PSG layer|
    US5712179A|1995-10-31|1998-01-27|Sandisk Corporation|Method of making triple polysilicon flash EEPROM arrays having a separate erase gate for each row of floating gates|
    US5707897A|1996-05-16|1998-01-13|Taiwan Semiconductor Manufacturing Company Ltd.|Non-volatile-memory cell for electrically programmable read only memory having a trench-like coupling capacitors|
    US5763309A|1996-06-24|1998-06-09|Macronix International Co., Ltd.|Self-aligned isolation and planarization process for memory array|
    US5753561A|1996-09-30|1998-05-19|Vlsi Technology, Inc.|Method for making shallow trench isolation structure having rounded corners|
    US5834358A|1996-11-12|1998-11-10|Micron Technology, Inc.|Isolation regions and methods of forming isolation regions|
    US5763315A|1997-01-28|1998-06-09|International Business Machines Corporation|Shallow trench isolation with oxide-nitride/oxynitride liner|
    US5741740A|1997-06-12|1998-04-21|Taiwan Semiconductor Manufacturing Company, Ltd.|Shallow trench isolation method employing gap filling silicon oxide dielectric layer|
    US6008112A|1998-01-08|1999-12-28|International Business Machines Corporation|Method for planarized self-aligned floating gate to isolation|US5767005A|1993-07-27|1998-06-16|Micron Technology, Inc.|Method for fabricating a flash EEPROM|
    US6780740B1|1993-07-27|2004-08-24|Micron Technology, Inc.|Method for fabricating a floating gate semiconductor device|
    US7235856B1|1997-12-18|2007-06-26|Micron Technology, Inc.|Trench isolation for semiconductor devices|
    US6107157A|1998-02-27|2000-08-22|Micron Technology, Inc.|Method and apparatus for trench isolation process with pad gate and trench edge spacer elimination|
    JP4237344B2|1998-09-29|2009-03-11|株式会社東芝|Semiconductor device and manufacturing method thereof|
    US6153494A|1999-05-12|2000-11-28|Taiwan Semiconductor Manufacturing Company|Method to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flash|
    US6198658B1|1999-10-08|2001-03-06|Hyundai Electronics America, Inc.|High density flash memory architecture with columnar substrate coding|
    US6448606B1|2000-02-24|2002-09-10|Advanced Micro Devices, Inc.|Semiconductor with increased gate coupling coefficient|
    US6482723B1|2000-09-21|2002-11-19|National Semiconductor Corporation|Method for forming self-aligned floating gates|
    KR100413829B1|2001-03-23|2003-12-31|삼성전자주식회사|Trench Isolation Structure and Method for Fabricating the Same|
    JP2003017595A|2001-06-29|2003-01-17|Toshiba Corp|Semiconductor device|
    US6583060B2|2001-07-13|2003-06-24|Micron Technology, Inc.|Dual depth trench isolation|
    US6924220B1|2001-08-03|2005-08-02|Advanced Micro Devices, Inc.|Self-aligned gate formation using polysilicon polish with peripheral protective layer|
    US6677224B2|2001-10-12|2004-01-13|Horng-Huei Tseng|Method of forming stacked gate for flash memories|
    US6781189B2|2002-01-22|2004-08-24|Micron Technology, Inc.|Floating gate transistor with STI|
    TW527654B|2002-04-08|2003-04-11|Winbond Electronics Corp|Manufacturing method of floating gate for the flash memory|
    US6716719B2|2002-05-29|2004-04-06|Micron Technology, Inc.|Method of forming biasable isolation regions using epitaxially grown silicon between the isolation regions|
    US6579761B1|2002-08-20|2003-06-17|Taiwan Semiconductor Manufacturing Company|Method to improve the coupling ratio of top gate to floating gate in flash|
    US7005338B2|2002-09-19|2006-02-28|Promos Technologies Inc.|Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate|
    KR100545183B1|2003-12-27|2006-01-24|동부아남반도체 주식회사|Method for fabricating self aligned isolation layer in flash cell|
    US6812120B1|2004-02-26|2004-11-02|Powerchip Semiconductor Corp.|Method of forming floating gate of memory device|
    KR100645067B1|2005-07-04|2006-11-10|삼성전자주식회사|Non-volatile memory device having a floating gate and methods of forming the same|
    KR100824400B1|2005-07-08|2008-04-22|삼성전자주식회사|Non-volatile memory devices and methods of forming the same|
    KR100739974B1|2005-11-23|2007-07-16|주식회사 하이닉스반도체|Method of manufacturing a flash memory device|
    KR100649974B1|2005-11-30|2006-11-27|주식회사 하이닉스반도체|Flash memory device with recessed floating gate and method for manufacturing the same|
    KR100734464B1|2006-07-11|2007-07-03|삼성전자주식회사|Method of forming fine pitch hardmask and method of fine patterns of semiconductor device|
    KR100885383B1|2007-09-27|2009-02-23|주식회사 동부하이텍|Semiconductor device and method for fabricating the same|
    法律状态:
    2001-07-19| STCF| Information on status: patent grant|Free format text: PATENTED CASE |
    2005-01-11| FPAY| Fee payment|Year of fee payment: 4 |
    2009-01-07| FPAY| Fee payment|Year of fee payment: 8 |
    2010-01-04| AS| Assignment|Owner name: ROUND ROCK RESEARCH, LLC,NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:023786/0416 Effective date: 20091223 Owner name: ROUND ROCK RESEARCH, LLC, NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:023786/0416 Effective date: 20091223 |
    2013-01-09| FPAY| Fee payment|Year of fee payment: 12 |
    优先权:
    申请号 | 申请日 | 专利标题
    US9844993A| true| 1993-07-27|1993-07-27||
    US08/532,997|US5767005A|1993-07-27|1995-09-25|Method for fabricating a flash EEPROM|
    US08/909,713|US6054733A|1993-07-27|1997-08-12|Method for fabricating a flash EEPROM|
    US09/148,845|US6281103B1|1993-07-27|1998-09-04|Method for fabricating gate semiconductor|
    US09/536,928|US6271561B2|1993-07-27|2000-03-27|Method for fabricating floating gate semiconductor devices with trench isolation structures and self aligned floating gates|US09/536,928| US6271561B2|1993-07-27|2000-03-27|Method for fabricating floating gate semiconductor devices with trench isolation structures and self aligned floating gates|
    [返回顶部]