• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    In a bubble memory of the type employing electrical current pulses to sequentially advance magnetic bubbles along preselected paths within a magnetic bubble layer, high speed operation is achieved through the use of two generally co-extensive conductive layers (25, 26) overlying the magnetic bubble layer, the two conductive layers being spaced apart by an insulating film (27). Each layer includes a pattern of apertures (30, 31 FIG. 3) therethrough, corresponding apertures in the two layers being slightly off-set from one another. Various sequences of current pulses (e.g. I<u1>u, I<u2>u, I<u3>u, I<u4>u - FIG. 5) are applied to the conductive layers for advancing the bubbles along propagation paths defined by the aperture patterns.
    公开号:SU988200A3
    申请号:SU802878801
    申请日:1980-02-11
    公开日:1983-01-07
    发明作者:Генри Бобек Эндру
    申请人:Вестерн Электрик Инк. (Фирма)；
    IPC主号:
    专利说明:

    The purpose of the invention is to simplify and improve the reliability of a storage device for a storage device. This goal is achieved by the fact that the storage device for the memory device contains, sequentially, an insulating layer and a second electrically conductive layer with holes deposited on the first electrically conductive layer, the holes in the second electrically conductive layer being displaced first conductive layer. FIG. 1 is a schematic diagram of a storage device; in fig. 2-k-o-r individual fragments of the accumulator; in fig. illustrations of individual aspects of the proposed accumulation of l. ; The storage device for the storage device (Fig. 1) contains a magnetically uniaxial film 1 on which the first electrically conductive layer 2 with apertures, the insulating layer 3 and the second electrically conductive layer k with oval shapes are successively applied. The holes 5 in the second electrically conductive layer 4 are displaced relative to the respective holes .6 "the first electrically conductive layer 2 one quarter of the progressing period of the CMD (Fig. 2). 1. is determined by the relative position of the above holes 5 and 6 (Fig. 2). As an example in FIG. Figure 3 shows in an enlarged view the sequence of the arrangement of the holes 5 and 6 for a sweeping trajectory of the advance of the CMD, including turns. The placement of the hole relative to the associated versity in the adjacent electrically conductive layer determines the sequence of the field gradients and, thus, the exact motion of the CMD at each moment. 0t The portable placement can be such that the holes in each pair can be displaced relative to each other along the axis of movement of the CMD, be displaced in the lateral direction relative to each other, or have both the first and the second displacement together. The CMD is entered into the accumulator by means of the 8 CMD generator, which is excited by a source of 9 current pulses. The CMD is read in the accumulator after their preliminary stretching by the diamond-shaped 10 CMD expander using a thin-film magneto-resistor 11, the cable from which is fed to the read amplifier 12. The promotion of the CMD along the trajectory 7 is carried out by feeding into the electrically conductive layers 2 and 4 bipolar pulses, currents L, W and 3, 4, respectively, which are superimposed on each other (Fig. 5). The direction of flow of these currents in the layers is indicated by arrows in FIG. 6. As a result of the flow of these currents, local magnetic fields arise at the edges of the holes, which attract CMD. When applying the specified sequence of current impulses, each pair of offset holes, forming the period of advancement of the circuit, ensures the creation of four stable positions of the CMD P4 (Fig. 7). The solid and dotted lines in FIG. 7 are shown biased relative to each other only for purposes of consistency. Thus, when applying a sequence of pulses 3.- Hij. The CMD sequentially moves from the positions P to the position P, Repeating the supply of the specified sequence of current pulses D.- 3x leads to the successive advancement of the CMD along the hole of the CMD progress made. Obviously, the bending and closed-loop paths of motion of the CMD, as well as the straight sections, are realized by appropriate arrangement of the holes in layers 2 and (Fig. 3). FIG. 3 CMD movement occurs in a clockwise direction. However, by changing the pulse feeding sequence 3, - 3i to the opposite one, it is possible to cause the CMD to move counterclockwise. Even more flexible possibilities for changing the direction of motion of the CMD are illustrated in FIG. 8,; The bumpy placement of holes (indicated by vertical lines) ensures simultaneous movement of the CMD along the X and Y axes, as well as rotation by 90®. When serving as shown in FIG. 5 of the sequence of pulses of the current 34 CMD on Fig
    move simultaneously upwards along the Y axis and left to the right along the X axis,
    The shape of the supply voltage Uf) and the current pulses, as well as the connection circuit of the electrically conductive layers, are shown respectively in Figures 9 and 10. As shown in Fig. 10, layers 2 and are connected to each other in parallel. And, respectively, in series with capacitor 13 and inductance 1. Such a circuit switches the energy between the capacitor and inductance and generates square current pulses in the layers.
    Stretch CMD before reading. It is implemented using an expanded 10 CMD, in which slots of successively increasing length are used, located in layers 2 and 4 across the motion path of the CMD. Promotion of the domain in the expander 10 is carried out in the same manner as in other parts of the CMD progress path,
    Practical tests of one of the variants of the proposed device showed its efficiency
    at frequencies up to 1 MHz. Output signal The storage capacity was 10 bits.
    权利要求:
    Claims (2)
    [1]
    1. US patent NP 3 60116, cl. publish 1971.
    [2]
    2.US Patent “G,
    cl. 3 "0-17 j published 1981 (prototype
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    同族专利:
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    DE2948918C1|1982-04-08|
    IT1121350B|1986-04-02|
    SE8000735L|1980-01-30|
    FR2428890B1|1984-12-21|
    YU137079A|1982-06-30|
    GB2040124B|1982-07-07|
    IE48158B1|1984-10-17|
    NL7904568A|1979-12-14|
    GB2040124A|1980-08-20|
    IE791131L|1979-12-12|
    BE876869A|1979-10-01|
    CA1119721A|1982-03-09|
    JPS5824868B2|1983-05-24|
    IT7923413D0|1979-06-08|
    SE417653B|1981-03-30|
    US4162537A|1979-07-24|
    WO1980000113A1|1980-01-24|
    FR2428890A1|1980-01-11|
    JPS55500489A|1980-08-07|
    ES481485A1|1980-01-16|
    DD144325A5|1980-10-08|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US3925768A|1973-12-27|1975-12-09|Ibm|Gapless double-sided propagation structure for bubble domain devices|
    US3988722A|1974-12-31|1976-10-26|International Business Machines Corporation|Single sided, high density bubble domain propagation device|
    US4143420A|1977-12-06|1979-03-06|Bell Telephone Laboratories Incorporated|Conductor-access, magnetic bubble memory|
    US4143419A|1977-12-06|1979-03-06|Bell Telephone Laboratories, Incorporated|Magnetic bubble memory with single level electrically-conducting, drive arrangement|
    US4142249A|1977-12-06|1979-02-27|Bell Telephone Laboratories, Incorporated|Conductor-access, magnetic bubble memory|US4314358A|1979-12-20|1982-02-02|Bell Telephone Laboratories, Incorporated|Segmented, conductor access, magnetic bubble memory|
    JPS6252395B2|1980-02-15|1987-11-05|Nippon Electric Co|
    US4345317A|1980-07-25|1982-08-17|Bell Telephone Laboratories, Incorporated|Magnetic domain memory with Hall effect detector|
    FR2547098B1|1983-05-30|1985-07-05|Commissariat Energie Atomique|DEVICE FOR PROPAGATING MAGNETIC BUBBLES|
    JPH04502529A|1989-11-01|1992-05-07|
    WO1991012614A1|1991-06-10|1991-08-22|Spetsialnoe Konstruktorsko-Tekhnologicheskoe Bjuro Donetskogo Fiziko-Tekhnicheskogo Instituta Akademii Nauk Ukrainskoi Ssr|Information storage for memory device based on cylindrical magnetic domains|
    WO1991012613A1|1991-06-11|1991-08-22|Spetsialnoe Konstruktorsko-Tekhnologicheskoe Bjuro Donetskogo Fiziko-Tekhnicheskogo Instituta Akademii Nauk Ukrainskoi Ssr|Channel for the passage of cylindrical magnetic domains|
    JPH04505520A|1991-06-13|1992-09-24|
    JPH04505521A|1991-06-14|1992-09-24|
    US6871023B2|2001-12-03|2005-03-22|The Boeing Company|Spread polarization transmitter and associated system and method of operation|
    IT201700067128A1|2017-06-16|2018-12-16|Sambusseti Antonio|CONDUCTIVE COATING|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    US05/914,959|US4162537A|1978-06-12|1978-06-12|Magnetic bubble memory|
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