专利摘要:
This invention relates to the field of acoustoelectronics. The aim of the invention is to increase the level of suppression of spurious signals. The band-pass filter on surface acoustic waves contains a piezoelectric substrate 1 and interdigital electrode structures 2, 3, the distance between the pin electrodes of each of which is different, and the ratio between the lengths E and the first 2 and second 3 interdigital electrode The structures and distances d.,, dj between the pin electrodes of these structures 2, 3 are selected in accordance with the following dependencies: e ,, d, / d 1td, /, - d ,. As a result, there is an almost complete suppression of the false signal of the triple passage, resulting from the undesirable multiple reflections of the acoustic signal from the counter-pin electrode structures 2, 3. 2 Il. i CO X2 7 ig./n
公开号:SU1346060A3
申请号:SU802891852
申请日:1980-03-11
公开日:1987-10-15
发明作者:Эшлер Ханс;Бульст Вольф-Экхарт
申请人:Сименс Аг (Фирма);
IPC主号:
专利说明:

The invention relates to acousto electronics and can be used in the design of devices based on surface acoustic waves (SAW).
The purpose of the invention is to increase the level of suppression of spurious signals,
FIG. 1 shows the design of a bandpass filter on a surfactant; in fig. 2 amplitude-frequency characteristics of the interdigital electrode structures of the filter (F, F) and the dependence of the amplitude of the triple-pass signal on the frequency (F, j).
The bandpass filter on the surfactant contains a piezoelectric substrate 1 and interdigital electrode structures 2 and 3.
The device works with; 7 following way.
After excitation of the surfactant in the counter-pin electrode structure 2, it propagates in the direction of structure 3, in which it is converted into an electrical signal. In this case, the acoustic signal is partially reflected from structure 3 and re-enters into structure 2, forming a triple-pass signal, value. The appearance of this false signal leads to the appearance of distortion of the amplitude response of the filter.
To suppress the triple-pass signal resulting from undesirable multiple reflections from structures 2 and 3 in this filter, the ratio between the distances and E.2 of the electrode structures 2 and 3 and the distances d, d between the pins of these structures 2 and 3 are selected according to dependencies: IJl. 1/2, d / dj -1 ± f - j-.
As follows from FIG. 2, the amplitude of the triple-pass signal F is zero at frequencies f d and fj, the values of which are respectively less and more than the average frequency of the electrode structure 3,
The choice of the above relations allows the average frequency f to be shifted, structure 3 with the characteristic F k
df compared with a given average frequency of the filter, and therefore, compared with the average frequency f of the electrode structure 2 so that one of two zero values
the amplitude of the signal F f R or f coincides with the value of the average frequency of the filter. Practically, only an insignificant part of the triple pass signal gets into the transmission band of the filter, which provides an increase in the level of suppression of spurious signals.
权利要求:
Claims (1)
[1]
Invention Formula
A band-pass filter on surface acoustic waves (SAW) containing a piezoelectric substrate and the first and second interdigital electrode structures located on its surface, the distance between the longitudinal axes of symmetry of the pin electrodes of each of which is different, and the second interdigital electrode structure is filled with
a longer distance along the propagation direction of the surfactant and a distance between the longitudinal axes of the C-meter of the pin electrodes dj v / 2fp, where V is the propagation velocity nABj m / s; f (, is the central frequency of the filter, Hz, characterized in that, in order to increase the level of suppression of spurious signals, the ratio between length 1 and Jj of the first
and the second interdigital electrode structures and the distances between the longitudinal axes of symmetry of the interdigital electrodes of these structures are selected in accordance with the following dependencies:
IJI, M2; d,
d,
类似技术:
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US3980904A|1976-09-14|Elastic surface wave device
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同族专利:
公开号 | 公开日
EP0016979A1|1980-10-15|
JPS55130219A|1980-10-08|
EP0016979B1|1983-07-06|
ES489418A1|1980-09-16|
HU181685B|1983-11-28|
YU67080A|1983-06-30|
JPH026670Y2|1990-02-19|
BR8001429A|1980-11-11|
JPS6312931U|1988-01-28|
DE2909705A1|1980-09-18|
CA1137183A|1982-12-07|
DE2909705C2|1984-09-06|
AT4077T|1983-07-15|
US4325037A|1982-04-13|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题

US3582838A|1966-09-27|1971-06-01|Zenith Radio Corp|Surface wave devices|
US3550045A|1969-06-25|1970-12-22|Zenith Radio Corp|Acoustic surface wave filter devices|
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DE2132985C3|1971-07-02|1981-06-04|Siemens AG, 1000 Berlin und 8000 München|Piezoelectric filter based on the surface wave principle|
US3987376A|1974-03-22|1976-10-19|Hazeltine Corporation|Acoustic surface wave device with harmonic coupled transducers|
DE2610183A1|1975-03-12|1976-09-23|Murata Manufacturing Co|WAVE FILTER WITH ACOUSTIC SURFACE CONDUCTION|
GB1529941A|1975-01-15|1978-10-25|Mullard Ltd|Electrical filters including coupled resonators|
DE2615719A1|1976-04-09|1977-10-27|Siemens Ag|Filter based on surface wave principle - has weighted and non-weighted transducers giving mean frequency with linear phase characteristic|DE3438246A1|1984-10-18|1986-04-24|Siemens AG, 1000 Berlin und 8000 München|ACOUSTIC WAVE FILTER|
NO855284L|1985-01-18|1986-07-21|Siemens Ag|FILTERS WORKING WITH ACOUSTIC BELLS.|
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JPH0646692B2|1986-01-10|1994-06-15|株式会社日立製作所|Surface acoustic wave resonator|
US4731595A|1986-01-24|1988-03-15|Rf Monolithics, Inc.|Resonator structure|
DE19638627B4|1996-09-20|2007-09-27|Epcos Ag|Surface acoustic wavefilter|
法律状态:
优先权:
申请号 | 申请日 | 专利标题
DE2909705A|DE2909705C2|1979-03-12|1979-03-12|Surface acoustic wave arrangement|
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