• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:

    公开号:SU1210679A3
    申请号:SU833622866
    申请日:1983-07-11
    公开日:1986-02-07
    发明作者:Хольцапфель Е. Георг；Леш Ян
    申请人:Др.Георг Хольцапфель (Фирма)；
    IPC主号:
    专利说明:

    2. A method according to claim 1, characterized in that the pressure and the temperature are selected in the range in which the thermo-luminescent response has a relative maximum.
    3. Method according to paragraphs. 1 and 2, T - characterized in that plastic deformed material is used as a material for the sensitive layer, in particular LiF, CaFj ,.
    4. Method according to paragraphs. 1-3, characterized in that a material is used as a carrier
    with a low effective order number, in particular, Be, B, Mg, A1, Si, or BeQ, MgO compounds, with a surface pretreated by sand blasting and / or etching.
    5. Method according to claims, 1-4, about t that because between the sensitive layer and the surface of the carrier a binding layer is applied by plasma spraying, for example, from B, Mg, A1, Si.
    6. Method pop. 1.3 and 5, characterized in that graphite is used as a carrier.
    7. Method according to claims, 1-6, which is based on the fact that a reflective layer is applied under the sensitive layer, for example, from Be, A1, hfe, MgO,.
    The invention relates to a method for producing a thin layer detector for an integrating dosimeter, in particular a thermoluminescent dosimeter from a powder material.
    The aim of the invention is to improve the reproducibility of the detector characteristics by fabricating a dosimeter with a thin detector layer, on thermoluminescent (TL), whose response sensitivity relative to radiation, the parameters of the manufacturing method would not have a negative effect and which would maintain a long-lasting bond with the heat-resistant substrate and at temperatures up to 400 C,
    210679
    8. Method p.p. 7, characterized in that the reflective layer is applied by plasma spraying,
    9. Method according to any one of claims 1 to 8, characterized in that, in order to simultaneously produce a large number of detectors, a plate of large size is used as a carrier, and individual detectors are obtained by cutting or sawing it.
    10. The method according to claim 9, which is based on the use of a plate with a grid of cuts deposited on it, and the simultaneous separation
    detectors carried out by subjecting
    plate for short-term exposure to high pressure.
    11. Method according to claim 9, characterized in that devices for pressing with cutting protrusions of the desired pattern are used to separate the plate into individual detectors.
    12. Method according to paragraphs. 1-11, about t - characterized by the fact that the sensitive layer is pressed into a high temperature using a protrusion pressing device
    in the recess in the carrier.
    13. Method according to paragraphs. 1-12, which is based on the fact that the pressing is carried out by rolling.
    The essence of the invention lies in the fact that they select a processing mode in which the resulting detector has a sufficiently large thermoluminescent sensitivity, although its decrease is usually observed with increasing pressure. In a preferred embodiment of the proposed method, the pressure and
    temperature is chosen in the region of the relative maximum thermoluminescence sensitivity.
    The most suitable for processing by the proposed method, due to its relatively good plasticity, are such substances.
    as lithium fluoride LiF, lithium borate () and calcium fluoride (CaFg)
    To ensure tissue equivalence of the dosimeter, it is preferable to use materials with a small effective serial number. As a suitable substrate with a small value for obtaining detectors by the proposed method, it is possible to use both simple elements such as beryllium (Be), magnesium (Mg) aluminum (A1), silicon (Si), and their alloys and compounds, for example beryllium oxide (BeO), magnesium oxide (MgO), alumina (), and mixtures of these ceramics, and the surface of the substrate can be pretreated by etching and / or sandblasting.
    In another embodiment, the pre-treatment of the substrate surface consists in applying a flame deposition film onto it, consisting, for example, of boron (B), magnesium (Mg), aluminum (A1), silicon (Si) or their alloys, or magnesia (MgO), alumina (), or mixtures thereof. Such a film serves as a bonding layer between the substrate and the detector layer, applied by hot pressing.
    The method can also be applied when using materials based on graphite as a substrate before applying a detector film to them by hot pressing according to the proposed method.
    In order to increase the thermoluminescent light output when the TAD is heated to the surface of non-reflecting substrates or bonding layers, in particular, from boron (B) or silicon (Si), a reflective layer of beryllium (Fe), magnesium (Mg), aluminum (A1 ) or their alloys, magnesium oxide (MgO), alumina (AljO,) or mixtures thereof. In another embodiment of the method, such a reflecting layer is applied by flame spray. So, for example, a boron binder layer together with an alumina reflecting layer (both layers are applied by flame spraying) together form a double intermediate layer between the substrate, for example, graphite, and a detector film, for example, lithium fluoride.
    (LiF). The result is the following structure: C / B / Al O, -LiF. Other embodiments of the present invention are described.
    in dependent claims.
    FIG. 1 to 3 show various embodiments of the carrier layer, side view, figure 4 - three-dimensional
    diagram of the limiting thermoluminescent response of the LiF-layer applied by hot pressing, depending on pressure and temperature. The detector film 1 (Fig. 1), applied by pressing onto a suitably prepared substrate 2, covers the entire surface of the latter.
    According to another embodiment of the invention, the film of detector 1 (Fig. 2), applied by pressing onto a suitably prepared substrate 2, only partially covers its surface.
    In the embodiment (Fig. 3), the film of the detector 1 is pressed into a recess in the substrate 2, due to which it is better protected from mechanical damage. Intermediate binder 3 and reflective 4 layers are applied between the substrate 2 and the film of the detector 1.
    In order to obtain a whole batch of detectors at one time hot pressing, in accordance with the invention, it is proposed to use a large substrate plate, which is then divided into separate detectors by cutting or sawing.
    According to a preferred embodiment of the invention, a large substrate plate is applied with a notch-net applied thereon. From such a plate, all detectors of the same batch can be obtained simultaneously by exposing it, for example, to brief exposure to high pressure. Alternatively, in order to separate the detectors of one batch, an appropriate grid is applied onto the press stamp.
    Hot pressing to obtain thin layer detectors using the proposed method is expedient to be carried out in a press with a punch and a base plate. Hot pressing according to the proposed method can be carried out by rolling,
    and it is preferable to use one or more heated loaded rolls.
    Example 1. The detectors are disks with a diameter of 17 and a thickness of 1 mm with a concentric recess with a diameter of 10 and a depth of 0.5 mm into which thin films are deposited. As the detector material, lithium fluoride doped with magnesium and titanium is used.
    (LiFiMg, Ti). Hot pressing was carried out at a pressure of 75 MPa and 400 ° C. It was found that the characteristic luminescence of this material, in particular, its luminescence curve (dependence of the photocurrent on a linearly increasing temperature), does not change significantly during the transition from powder to thin films obtained by hot pressing it in the same way. The sensitivity of a lithium fluoride detector deposited without intermediate layers on an aluminum substrate (A1) is a P1 detector to gamma radiation (0.012 kGy) and its luminescence curve is almost identical with similar characteristics of the original powder placed in the cup. Mayes (24 mg). However, in the area of low doses, there is a deviation, since the light emitted from the (Al) LiF interface increases with increasing temperature the background of this detector, which is not dependent on radiation.
    Example2. A hot-pressed fluorine-lithium detector on a graphite substrate with a bonding layer of boron and reflecting an alumina layer deposited by flame spraying (C / B / AljO), an L1P detector, almost meets all the requirements of thermoluminescent dosimetry. In particular, its background (including the background of the recording device) is so small that it is only slightly different. It boosts the background
    heater and photomultiplier recorder. The luminescence curve almost coincides with the luminescence curve (LiF: Mg, Ti) of the material (24 mg) 0.012 kGy. Using such a detector, it is thus possible to detect radiation up to.
    FIG. Figure 4 shows the limiting thermoluminescent responses to radiation of films applied by hot pressing, related to the limiting response of the raw powder, depending on the pressure and temperature of pressing. With increasing pressure, in particular, the yield decreases. If, however, the temperature is increased by pressing under constant pressure, then at a temperature of about 400 ° C a thermoluminescent material (LiF) is formed, after which a sharp decrease is observed.
    The saddle-shaped line with a maximum lies above 400 ° C. The detector film is firmly welded to the substrate material only at P and T values above a certain value. The region of these values (Fig. 4) is hatched. The operating point (5), therefore, should be chosen in this area. In this case, the working point corresponds to a pressure of 75 MPa and a temperature of 400 ° C.
    The advantages of the detectors obtained by the proposed method are primarily due to the small film thickness of the detector, its strength in connection with the heat-resistant substrate of a material with a small serial number. This ensures uniform heating of the detector volume, as well as reliable thermal contact with the tuning system of the recording instrument. Due to this, the value of the absorbed dose can be quickly and with good reproducibility. Thus, in a series of experiments with a single detector, which is irradiated with the same doses, the standard deviations are 1%.
    Y //////// 7/77/7 // 77 / //// // A
    F
    1210679 13
    / 77 / /
    F
    f
    Pi / 2. Z
    -777 / 7 /.
    .З
    权利要求:
    Claims (13)
    [1]
    1. METHOD FOR MANUFACTURING A THIN-LAYER DETECTOR FOR AN INTEGRATING SOLID SOLID DOSIMETER, mainly a thermoluminescent one, comprising applying a sensitive layer of powder material to a carrier, characterized in that, in order to improve the reproducibility of the detector characteristics, the layer of powder material is heated to be pressurized and simultaneously heated to q mechanical connection with the pre-treated surface of the carrier. .
    >
    [2]
    2. The method according to p. ^ Characterized in that the pressure and. The temperature is chosen in the range in which the thermoluminescent response has a relative maximum.
    [3]
    3. The method according to PP. 1 and 2, characterized in that as the material for the sensitive layer, plastic deformed material is used, in particular LiF, Li 2 B ^ 0 7 , CaF 2 .
    [4]
    4. The method according to PP. 1-3, characterized in that the carrier material is used with a low effective sequence number, in particular Be, B, Mg, Al, Si, or compounds of BeO, MgO, A1 g 0 e with a surface pre-treated by sandblasting and / or etching.
    [5]
    5. The method according to PP. 1-4, characterized in that between the sensitive layer and the surface of the carrier is applied by plasma spraying a bonding layer, for example, of B, Mg, Al, si.
    [6]
    6. The way popp. 1,3 and 5, characterized in that graphite is used as a carrier.
    [7]
    7. The method according to PP. 1-6, characterized in that a reflective layer is applied under the sensitive layer, for example, from Be, Al, Mg, MgO, A1 2 0 Oe . ''
    [8]
    8. The method according to.π. 7, characterized in that the reflective layer is applied by plasma spraying.
    [9]
    9. The method according to PP. 1-8, characterized in that, in order to simultaneously obtain a large number of detectors, a large plate is used as a carrier, and individual detectors are obtained by cutting or sawing it.
    [10]
    10. The method according to p. 9, characterized in that they use a plate with a network of notches applied to it, and the detectors are simultaneously separated by exposing the plate to short-term high pressure exposure.
    [11]
    11. The method according to p. 9, characterized in that for separating the plate into separate detectors using a device for pressing with cutting protrusions of the desired pattern.
    [12]
    12. The method according to PP. 1-11, characterized in that the sensitive layer is pressed with a protrusion device with a protrusion at a high temperature in a recess in the carrier.
    [13]
    13. The method according to PP. 1-12, on t l the t that the pressing is carried out by rolling.
    类似技术:
    公开号 | 公开日 | 专利标题
    SU1210679A3|1986-02-07|Method of producing thin-layer detector for integrating solid-state dosimeter
    US4825084A|1989-04-25|Laser readable thermoluminescent radiation dosimeters and methods for producing thereof
    US5731590A|1998-03-24|Metal oxide composite dosimeter method and material
    US4242221A|1980-12-30|Ceramic-like scintillators
    EP1979765A2|2008-10-15|Scintillation element, scintillation array and method for producing the same
    US5083031A|1992-01-21|Radiation dosimeters
    Gasiot et al.1982|Laser heating in thermoluminescence dosimetry
    Higashimura et al.1963|Dosimetry of atomic bomb radiation in Hiroshima by thermoluminescence of roof tiles
    US3471699A|1969-10-07|Phosphor-polytetrafluoroethylene thermoluminescent dosimeter
    CA1089120A|1980-11-04|Method of reading thermoluminescent dosimeter
    EP0495890B1|1995-01-11|Method for detecting radiation dose utilizing thermoluminescent material
    Akselrod et al.1999|Optically stimulated luminescence response of Al2O3 to beta radiation
    Benabdesselam et al.1999|Selected thermoluminescent properties in CVD diamond film
    Cai et al.1996|Thermoluminescence of LiF: Mg, Cu, P | TLD After Annealing Between 200 and 400 oC
    US5332906A|1994-07-26|Scintillator assembly for alpha radiation detection and an associated method of making
    Akber et al.1988|The 100 C thermoluminescence emission from high-fired ceramics: a three dimensional view
    JPH01240887A|1989-09-26|Radiation detector and manufacture thereof
    US4636642A|1987-01-13|Thin thermoluminescent dosimeter and method of making same
    Tojo et al.1967|Preparation of thermal neutron scintillators based on a mixture of ZnS |, 6LiF and polyethylene
    US3567922A|1971-03-02|Thermoluminescent dosimeter and method
    JPH05263075A|1993-10-12|Stimulable thermophosphor
    US4216124A|1980-08-05|Material for the construction of exoelectron detectors
    RU2091811C1|1997-09-27|Method of fabrication of thermoluminescent detectors
    US3899679A|1975-08-12|Manganese activated phosphate glass for dosimetry
    US2779685A|1957-01-29|Method of manufacturing a photocathode screen assembly for an image amplifier
    同族专利:
    公开号 | 公开日
    CA1202838A|1986-04-08|
    EP0099852B1|1989-06-14|
    US4510174A|1985-04-09|
    JPS5972076A|1984-04-23|
    AT44100T|1989-06-15|
    DE3226378A1|1984-01-12|
    EP0099852A3|1986-05-21|
    DE3380073D1|1989-07-20|
    EP0099852A2|1984-02-01|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    RU2516655C2|2010-01-29|2014-05-20|Тарту Юликоол |TRANSPARENT TISSUE-EQUIVALENT DETECTOR OF RADIATION BASED ON Li2B4O7 FOR THERMALLY OR OPTICALLY STIMULATED LUMINESCENT DOSIMETRY AND METHOD OF ITS MANUFACTURING|US28340A|1860-05-22|Henry|
    US3141973A|1962-09-11|1964-07-21|Metcom Inc|Thermoluminescent dosimeter|
    DE2147057A1|1971-08-11|1973-03-29|Rft Messelektronik Dresden Veb|Thermoluminescent dosimeter pill - using fluorinated carbon resin binder|
    FR2432717B1|1978-04-27|1982-03-12|Commissariat Energie Atomique|
    GB2052549B|1979-05-07|1983-04-13|Matsushita Electric Ind Co Ltd|Thermoluminescence dosimeter element and method of producing the same|
    US4286165A|1979-07-05|1981-08-25|The United States Of America As Represented By The United States Department Of Energy|Dosimeter for measuring skin dose and more deeply penetrating radiation|US4614837A|1985-04-03|1986-09-30|Allied Corporation|Method for placing electrically conductive paths on a substrate|
    JPH0552918B2|1985-04-03|1993-08-06|Fuji Photo Film Co Ltd|
    US4806772A|1985-10-10|1989-02-21|Quantex Corporation|Infrared sensing device outputting orange light and a process for making the same|
    US4839092A|1985-10-10|1989-06-13|Quantex Corporation|Photoluminescent materials for outputting orange light|
    US4812659A|1985-10-10|1989-03-14|Quantex Corporation|Infrared sensing device outputting blue-green light|
    US4822520A|1985-10-10|1989-04-18|Quantex Corporation|Photoluminescent materials for outputting blue-green light|
    US4983834A|1985-10-10|1991-01-08|Quantex Corporation|Large area particle detector system|
    US4830875A|1985-10-10|1989-05-16|Quantex Corporation|Photoluminescent materials and associated process and infrared sensing device|
    US4855603A|1985-10-10|1989-08-08|Quantex Corporation|Photoluminescent materials for radiography|
    US4879186A|1985-10-10|1989-11-07|Quantex Corporation|Photoluminescent materials for outputting reddish-orange light and a process for making the same|
    US4812660A|1985-10-10|1989-03-14|Quantex Corporation|Photoluminescent materials for outputting yellow-green light|
    US4842960A|1985-10-10|1989-06-27|Quantex Corporation|High efficiency photoluminescent material for optical upconversion|
    US4825084A|1986-08-19|1989-04-25|Peter F. Braunlich|Laser readable thermoluminescent radiation dosimeters and methods for producing thereof|
    US5083031A|1986-08-19|1992-01-21|International Sensor Technology, Inc.|Radiation dosimeters|
    JPS63262600A|1987-04-20|1988-10-28|Fuji Photo Film Co Ltd|Radiation picture conversion panel and manufacture thereof|
    JP2677818B2|1987-08-17|1997-11-17|コニカ株式会社|Radiation image conversion panel|
    JPH03175391A|1989-12-01|1991-07-30|Matsushita Electric Ind Co Ltd|Dosimeter for controlling individual exposure|
    DE4105126A1|1991-02-15|1992-08-20|Endos Gmbh Fuer Strahlenmesste|CODED SOLID DOSIMETER|
    US5622659A|1995-01-03|1997-04-22|Victoreen, Inc.|Method of preparing doped lithium fluoride thermoluminescent radiation detector|
    US5637875A|1995-07-07|1997-06-10|Battelle Memorial Institute|Method of enhancing radiation response of radiation detection materials|
    DE19643316C2|1996-10-21|1998-08-06|Gsf Forschungszentrum Umwelt|Thermoluminescence detector|
    DE10325437A1|2003-06-05|2004-12-23|Bayer Materialscience Ag|Polycarbonate molded body with low Staubanziehung|
    US8704182B2|2008-12-01|2014-04-22|Rikkyo Gakuin|Thermoluminescent layered product, thermoluminescent plate, method of producing thermoluminescent layered product, method of producing thermoluminescent plate and method of acquiring three-dimensional dose distribution of radiation|
    JP4431701B1|2009-09-04|2010-03-17|学校法人立教学院|Method for producing thermoluminescent plate, method for producing thermoluminescent laminate, thermoluminescent plate, and thermoluminescent laminate|
    US9329277B2|2012-06-22|2016-05-03|Landauer, Inc.|OSL sensor having a reflective backing|
    JP2014077677A|2012-10-10|2014-05-01|Panasonic Corp|Thermoluminescence dosimeter|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    DE19823226378|DE3226378A1|1982-07-12|1982-07-12|METHOD FOR PRODUCING A THIN-LAYER DETECTOR FOR AN INTEGRATING SOLID-BODY DOSIMETER|
    [返回顶部]