• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A photovoltaic cell having an improved barrier electrode comprising indium or tin. The cell utilizes metal-free phthalocyanine dispersed in an electrically insulated binder as the photoactive layer in contact with an ohmic electrode.
    公开号:SU1093265A3
    申请号:SU792787394
    申请日:1979-07-02
    公开日:1984-05-15
    发明作者:О.Лофти Рафик；Хсиао Чен-Куо；Х.Шарп Джеймс
    申请人:Ксерокс Корпорейшн (Фирма)；
    IPC主号:
    专利说明:

    The invention relates to semiconductor electronics, in particular, to optoelectronics, namely to semiconductor photocells, and can be used in the construction of inexpensive and simple to manufacture energy converters. Solar cells are known, KoToiMdx uses organic semiconductors, gel-dispersed, cheap, easy-to-make tl7 The disadvantages of these solar cells are extremely low energy conversion efficiency. f The closest technical solution to the invention is a photovoltaic cell based on metal-free phthalocyanine placed in a layer of a coupling dielectric with a C 2 3 barrier and optical electrode. However, such elements have a very low energy conversion efficiency. The core of the invention is to increase the efficiency of energy conversion,. This goal is achieved by the fact that in a photovoltaic cell based on a metalless phthalocyanine placed in a binder dielectric layer with barrier and optical (electrodes, the barrier electrode is made in the form of a layer containing a tag with an exit function lower than 4.7 eV and its oxide - with an electrical resistance of less than 200 ohms / o. This combination of the work function of a metal and the electrical resistance of its oxide provides greater energy conversion efficiencies. Since metalless phthalocyanine is a semiconductor p The type used as a barrier electrode should be characterized by a low work function.It is known that the optimal work function is in the range of 3.8 to 4.5 eV. In the manufacturing process for most metals it is impossible to prevent the oxidation of the metal forming the barrier electrode. However, when the electrical resistance of the oxide does not exceed 200 ohms / o, this oxidation does not affect the characteristics of the photovoltaic cell. Typical such metals are indium and tin. The drawing shows a photovoltaic cell. A layer of non-metal phthalocyanine placed in a bonding dielectric is deposited on an optical electrode 1 made of gold and forms a photoactive layer 2 on which barrier electrode 3 is formed. A photovoltaic cell can be easily manufactured by known technological methods using conventional equipment and ensures conversion efficiency energy, exceeding the conversion efficiency of other photovoltaic cells based on inexpensive organic photoactive materials.
    权利要求:
    Claims (1)
    [1]
    A PHOTOGALVANIC ELEMENT based on metal-free phthalocyanine placed in a binder dielectric layer with a barrier and optical electrodes, characterized in that, in order to increase the energy conversion efficiency, the barrier electrode is made in the form of a layer containing a metal with an output work below 4.7 eV, and its oxide - with an electrical resistance of less than 200 Ohm / p.
    SU br, 1093265 ° O ° to about 6 ° ΰ o o o Oo och g of η (ODO λ Ο λ Ο g
    О о о 0 OS ° о О о о ° 0 0 0 О С С р 0 0 о ° r О Q ° t> QOqoP ° O | at
    1093265 2
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    同族专利:
    公开号 | 公开日
    GB2024513B|1983-03-30|
    GB2024513A|1980-01-09|
    IT1122002B|1986-04-23|
    US4175982A|1979-11-27|
    ES482151A1|1980-02-16|
    DE2926376A1|1980-01-17|
    IT7924046D0|1979-07-02|
    MX150760A|1984-07-12|
    JPS5511398A|1980-01-26|
    CA1089065A|1980-11-04|
    JPS623596B2|1987-01-26|
    引用文献:
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    US3057947A|1959-10-01|1962-10-09|Calvin Melvin|Photoelectric cell using organic materials|
    US3530007A|1967-12-19|1970-09-22|Us Air Force|Solar cell including aceanthraquinoxaline photosensitive material|
    US3789216A|1973-01-02|1974-01-29|Xerox Corp|Photodetection device and method comprising phthalocyanine|
    US3900945A|1973-01-02|1975-08-26|Philco Ford Corp|Organic semiconductor solar cell|
    US3844843A|1973-01-02|1974-10-29|Philco Ford Corp|Solar cell with organic semiconductor contained in a gel|
    SU534808A1|1975-08-06|1976-11-05|Вологодский Политехнический Институт|Photosensitive layer|
    US4127738A|1976-07-06|1978-11-28|Exxon Research & Engineering Company|Photovoltaic device containing an organic layer|
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    JPH0311272Y2|1985-09-05|1991-03-19|
    JPS63149993U|1987-03-20|1988-10-03|
    JPH0351352Y2|1987-04-15|1991-11-01|
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    JP2813428B2|1989-08-17|1998-10-22|三菱電機株式会社|Field effect transistor and liquid crystal display device using the field effect transistor|
    JPH11265738A|1998-01-13|1999-09-28|Fuji Xerox Co Ltd|Photo semiconductor electrode and photocell using it|
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    WO2011053250A1|2009-10-26|2011-05-05|Agency For Science, Technology And Research|Photoelectrode with a polymer layer|
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    US05/921,289|US4175982A|1978-07-03|1978-07-03|Photovoltaic cell|
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