• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:

    公开号:NL9500502A
    申请号:NL9500502
    申请日:1995-03-14
    公开日:2001-06-01
    发明作者:Dayton Dale Eden；Thomas Robert Schimert
    申请人:Loral Vought Systems Corp；
    IPC主号:
    专利说明:

    Photovoltaic infrared semiconductor detector with diffractive optical resonance cavity.
    Field of the invention
    The present invention generally relates to infrared detectors and in particular relates to an infrared detector with a photovoltaic detection diode.
    Background of the invention
    Infrared detection cells and corresponding arrays are used to produce images in situations where optical imaging is not effective such as in the dark, or where infrared signatures provide additional information about the target.
    Continuous goals in the design of infrared detectors are to increase the detection power (D *) and increase the resistance of the diode detectors.
    A known photovoltaic infrared heterojunction detector with refractive optical resonance cavity, which has thermal detection areas but is configured as a large-area detector, is described in "The Resonant-Optical-Cavity HgCdTe Heterojunction Photodiode - A new Device for 10.6 pm Heterodyne Detector at 2 GHz", from RB Brady, D.R. Resler, P.W. Pastel, M.B. Reine and C.C. Wang in Proceedings IRIS Detector, 1987, vol. Ill, biz. 189-200.
    Summary of the invention
    A selected embodiment of the present invention is a photovoltaic diffractive resonance cavity detection cell for detecting incident infrared radiation in a selected bandwidth range, as defined by a first wavelength and a second longer wavelength. The detection cell contains a diffractive grating structure comprising a number of parallel, elongated photovoltaic segments periodically separated from one another by a distance equal to or less than the first wavelength of the bandwidth range. Each photovoltaic segment has a first portion of a first conduction type and a second portion of a second conduction type to form a pn junction between the first and second portions. The first parts are electrically connected to each other and the second parts are electrically connected to each other. A planar reflector is positioned offset (offset) from the photovoltaic segments. The photovoltaic diffractive grating structure in combination with the plenary reflector forms a diffractive optical resonance e-cavity structure in which the incident infrared radiation is efficiently coupled and absorbed in stepwise diffractive modes. A detection signal is produced between the first and second parts of the photovoltaic segments in response to the reception of invader infrared radiation.
    Brief description of the drawings
    For a more complete understanding of the present invention and its advantages, reference is now made to the following description taken in conjunction with the accompanying drawings, which are not necessarily given in scale and in which:
    Fig. 1 is a planar view of a one-dimensional polarization-sensitive infrared detection cell according to the invention; i
    Fig. 2 is a sectional view taken along line 2-2 of a segment of the infrared detection cell shown in FIG. 1;
    Fig. 3 is a sectional view taken along line 3-3 of a group of segments in the infrared detection cell shown in FIG. 1;
    Fig. 4 is a graph of predicted infrared energy absorption for the detection cell 10;
    Fig. 5 is a cross-sectional view of a further embodiment of the invention containing a modified segment of an infrared detection cell, as shown in FIG. 1, with the addition of metal contacts to the base and cap layers;
    Fig. 6 is a planar view of a further embodiment of the invention that includes cross segments for a two-dimensional polarization independent design; and i i
    Fig. 7 is a graph of predicted infrared energy absorption for the detection cell 100 shown in FIG. 6.
    Detailed description of the invention
    A first embodiment of the invention is illustrated in Figures 1, 2 and 3. An infrared detection cell 10 acts as a diffractive optical resonance cavity diode. The cell 10 contains parallel photovoltaic segments 16, 18, 20, 22 and 24, each of which contains a plurality of layers as shown in section view in Figures 2 and 3. The parallel segments 16, 18, 20, 22 and 24 form together a one-dimensional diffract: .eve lattice structure. A cross segment 14 interconnects segments 16, 18, 20, 22 and 24.
    The segments 16, 18, 20, 22 and 24 are made of etched portions of a conductive layer 28, a base layer 30, a pn junction 32 and a cap layer 34. The cell 10 further includes a conductive layer 36 and a passivation layer 46 The characteristics of these layers are shown below as follows, in which the symbol "A" represents the dimension unit "angstrom": element thickness material conductive layer 28 1000 A HgTe (conductive semimetal) base layer 30 7000 A HgCdTe (x «0, 21-0.255) (indium or iodine doped n-type 1015 / cm3) junction 32 5000 A graded pn junction between layers 30 and 34 cap layer 34 15000 A HgCdTe (x «0.26-0.3) (arsenic doped p-type 1017 / cm3) conductive layer 36 1000 A HgTe (conductive semimetal) passivation layer 46 1000 A CdTe (non-conductive)
    Mercury cadmium telluride (Hg ^ Cd ^ Te) is characterized by the symbol "x", which represents the ratio of Cd to Hg. The ratio of Hg is represented by "1-x".
    The diffractive optical resonance cavity diode as described is a small p-on-n heterojunction diode configuration. Other embodiments include n-on-p heterojunction configuration or p-on-n or n-on-p gay junction configurations. In a homojunction, the base and cap layer "x" values are the same. In a heterojunction, the base and cap "x" values are different.
    A segment structurally similar to segment 14 is positioned below conductor 12 and provides the same electrical functions as segment 14.
    The aluminum conductor 12 is a strip of deposited aluminum that is in electrical contact with the layer 28. The conductor 12 has a thickness of approximately 500 Å and a width of approximately 5 microns.
    The detection cell 10 shown in Figures 1, 2 and 3 is designed for reception in the long-wave infrared (LWIR) radiation band, i.e. wavelengths in the range of 8-12 microns. The uniform separation distance of the segments 16, 18, 20, 22 and 24 is defined as the "period" of the diffractive grating structure and is represented in FIG. 1 by the symbol "λ". The period A of the cell 10 is less than or equal to the shortest wavelength in the radiation band of interest. In this embodiment, A is equal to 8.0 microns. By using this period, the diffraction or diffraction of reflected infrared radiation is suppressed while the diffraction or diffraction of infrared radiation in the diffractive resonance optical cavity is enhanced. The efficient coupling of diffractive mode energy in the diffractive optical resonance cavity structure results in high absorption of infrared energy. Therefore, the cell 10 is referred to as a "diffractive optical resonance cavity" structure. The cavity extends from the surface of the reflection layer to the top surface of the passivation layer.
    The width of each of the segments 16, 18, 20, 22 and 24 is indicated in Fig. 1 by the symbol "w". The preferred w for these segments of cell 10 is equal to 1.5 microns.
    The overall width of the detection cell 10 is shown in fj g. 1 by the symbol "W". The preferred W for cell 10 is equal to 40 microns. The overall length of cell 10 is represented by the symbol "L". The preferred L for cell 10 is equal to 40 microns.
    The cap layer 34 is formed on the surface of layer 36 which is electrically conductive.
    The conductive layer 36 is formed on the surface of a smooth bottom layer 38 * The layer 38 comprises deposited aluminum with a thickness of approximately 500 A. The layer 38 has a reflective surface 40 which serves to absorb infrared radiation received by cell 10. reflect and it forms a highly reflective surface in the diffractive optical resonance cavity structure. The layer 38 also serves as an electrical conductor which is ohmic connected to the cap layer 34 segments through the conductive layer 36.
    An epoxy layer 42 adheres a substrate 44 to the flat bottom layer $ 8. The epoxy layer 42 has a selected thickness of 10000 Å and comprises an optical type epoxy as made by Masterbond Company. The substrate 44, which is preferably 20-40 mils thick, provides mechanical support for the cell 10 and may include, for example, sapphire or silicon. The substrate 44 may include an integrated silicon circuit having circuit components for receiving the detection signal produced at the electrical conductor outputs (such as 12 and 38) of the cell 10. Such integrated readouts (R0IC) for infrared detectors are shown in United States Patents 5179283 to Cockrum et al., issued January 12, 1995, entitled "Infrared Detector Focal Plane" and 4970567, to Ahlgren et al., issued November 13, 1990, and entitled "Method and Apparatus for Detecting Infrared Radiation, Monolithic Photodetector", where these two United States patents are incorporated herein by reference.
    The detection cell 10 further contains the passivation layer 46 which contains non-conductive CdTe. The layer 46 is only shown in figure 3 and not in figures 1 and 2 for the sake of clarity of representation.
    The distance from the reflection surface 40 to the top surface of the passivation layer 46 is approximately an odd multiple of the effective wavelength of the incident infrared radiation in the region between the reflective surface 40 and the top surface of the passivation layer 46. For the present embodiment, this termination equals 3 · 0 microns which is a triple multiple of the effective quarter-wavelength of 1.0 microns. The effective quarter wavelength is the free space quarter wavelength (which is 2.5 microns for a detector designed to operate at a wavelength of 10 microns) divided by the effective refractive index for this embodiment. The refractive index varies from low to low, but for the structure 10 as a whole, the effective refractive index is equal to 2.5 · This yields the effective quarter-wave length of 1.0 micron.
    The manufacture of the detector 10 is preferably carried out as follows. The base layer 30, junction 32 and cap layer 34 are grown epitaxially on a substrate (not indicated) of CdTe, CdZnTe or GaAs, in which the value of "x" and extrinsic doping change as the fouling progresses and the layers 30 and 40 and junction 32 as mentioned above.
    The conductor layer 36 is deposited or grown epitaxially on the cap layer 34 and the flat bottom layer 38 of aluminum is deposited on the conductor layer 36.
    The device as hitherto manufactured is adhered to the substrate 44 by the epoxy layer 42. The substrate (not shown) on which the layer 30 had grown is then removed using selective etchant, for example, using HF, peroxide (H 2 O 2). ) and water (H20) or HNO3, H302 and H20.
    The conductor layer 28 is deposited on the base layer 30.
    A conventional resist is applied to the layer 28 in the desired configuration to form the diffractive structure consisting of the segments 14, 16, 18, 20, 22, 24 and a corresponding segment under strip 12. The etching is preferably carried out by by means of bromethylene glycol aerosol etchings or free methyl radical plasma etchings.
    The aluminum guide 12 is designed and deposited on the layer 28 using standard photolithographic lift-off processing.
    The detection cell 10 shown in Figures 1, 2 and 3 substantially absorbs only one linear polarity of the incident infrared radiation due to the physical configuration of the elongated segments 16, 18, 20, 22 and 24 that receive the incident infrared radiation.
    A two-dimension polarity detection cell 100 is described below with reference to Figure 6.
    Reference is made to Figures 1, 2 and 3, wherein the detection cell 10 absorbs incident, substantially normal, infrared radiation. Detection cell 10 with segments 16, 18, 20, 22 and 24 acts as an optical d: Lf fraction grating as described in "Analysis and Applications of Optical Diffraction by Gratings" by Thomas K. Gaylord and M.G. Moharam in Proceedings of the IEEE, vol. 73, no. May 5, 1985 · The detection cell 10 containing the planar reflective bottom layer 3 & acts as a diffractive resonance optical cavity. Incident infrared radiation is efficiently coupled in diffractive mode energy into the cell 10 and absorbed into the basLs layer 30 to produce a photovoltaic current between the basls layer 30 and cap layer 34 in each of segments 16, 18, 20, 22 and 24. This current contains a detection signal which is passed through the interconnection segments of layer 30, including segment 14, to the aluminum conductor 12, and through the conductor layer 36 to the flat conductive bottom layer 38. Therefore, the detection signal for cell 10 between the aluminum conductor 12 and the flat aluminum bottom layer 38 is generated. The single cell detection signal 10 preferably represents a pixel (pel) within an array of cells 10. A plurality of such detection signals can be used to produce an image.
    The detection signals for each cell of a group of cells 10 can be provided to the ROIC substrate, as reported above, to produce a composite infrared image.
    Figure 4 shows a graph of the predicted quantum efficiency of the detection cell shown in Figures 1 to 3. Cell 10 is approximately 10 microns optimized for detection in the center of the 8-12 micron band.
    A second embodiment of the present invention is (a detection cell 60 shown in sectional view in Figure 5, corresponding to the sectional view in Figure 2. This embodiment is a modification of those shown in Figures 1, 2 and 3 EMBODIMENT Similar reference numbers previously described above refer to like elements in the detection cell 60. A passivation layer 37 of CdTe having a thickness of approximately 1000 Å is formed on the layer 3 Een A flat bottom layer 66 of aluminum having a thickness of approximately 1000 A is formed on the layer 37, thereby creating a reflective surface 68 on the interface of the layers 37 and 66.
    A conductive strip 70, preferably of aluminum of 1000 A thickness, is formed thereon and is in electrical contact with layer 34. An aluminum trip 64 of 1000 A thickness is formed on layer 30.
    In the detection cell 60, the detection signal is generated between the conductive strips 64 and 70.
    A further embodiment of the present invention is a detection cell 100 shown in Figure 6. Cell 100 is similar to the cell 10 shown in Figure 10 but contains additional photovoltaic transverse segments, which physically correspond to the previously described segments 16, 18, 20, 22 and 24. The horizontal and transverse photovoltaic segments form a rectangular two-dimensional diffraction grating.
    The detection cell 100 includes vertical photovoltaic segments 116, 118, 120, 122, and 124 along with intersecting horizontal photovoltaic segments 130, 132, 134, and 136. The layer 112 is an aluminum layer similar to the layer 12 shown in Figure 1. A photovoltaic segment 114 corresponds to the segment 14 in Figure 1. The spacing and dimensions of the horizontal and vertical segments in the detection cell 100 correspond to the segment distance in the cell 10 shown in Figures 1, 2 and 3.
    The detection cell 100 absorbs both horizontally and vertically polarized infrared radiation and is therefore an unpolarized detector. The detection cell 100 has a cross-sectional configuration as shown mainly in Figures 2 and 3 and has the following characteristics (the material being the same as indicated in the overview for the detection cell 10): element dlk & e
    conductive layer 28 1000 A.
    base layer 30 7000 A.
    junction 32 5000 A
    cap layer 34 15000 A.
    conductive layer 36 1000 A passivation layer 46 1000 A.
    The predicted spectral quantum efficiency for a 3/4 wavelength resonance detection cell 100 is shown in Figure 7 for a detection cell, as shown in Figure 6, where the base layer 30 is x * 0.21 and the cap layer is x = 0.26 . The total diode thickness is 3.0 microns. The period A equals 7 microns and the width w equals 1.0 microns. The passivation layer 46 in this embodiment is equal to ≤ 1000 A. The effective refractive index for the detection cell 100 is 2.5 µg, giving an effective quarter wavelength of 1 micron.
    Referring to Figure 7, it can be seen that the predicted quantum yield in the mid-region of the 8-12 micron band of interest exceeds 90%. Detection cell 100 is optimized for detection in the center of the 8-12 micron band at 10 microns.
    The embodiments of the invention described herein involve the system of mercury cadmium telluride material for operation in the spectral LWIR band. The operation in the LWIR band can also be realized when using a system of indium gallium antimony / indium arsenide or indium antimonide arsenide / indium antimonide stretched superlattice material. The invention can be applied in the middle of the spectral wavelength band (3 ~ 5 microns) using systems of mercury cadium telluride, indium antimonide, indium gallium antimide or indium antimonide arsenide material. The invention can also be applied in the short spectral wavelength band (2-2.5 micion) using a system of indium gallium arsenide material.
    The detection cells of the present invention can be scaled for optimization at selected infrared wavelengths. The detection cell 10 and the cell 100 embodiments are optimized for use in the 8-12 micron infrared radiation band with p: ek response in the center of the band approximately 10 microns infrared radiation. The thickness of the various layers (previously indicated in charts for cells 10 and 100) can be varied to effect optimization at other infrared wavelengths.
    The advantage of a photovoltaic diffractive optical resonance cavity design over a photovoltaic refractive optical resonance cavity infrared detector and a conventional photovoltaic detector as described in "Photovoltaic Infrared Detectors" of M.B. Reine, A.K. Soad and T.J. Tredwell in "Semiconductors and Semimetals", vol. 18,
    Mercury Cadmium Telluride, ed. By R.K. Hillardson and A.C. Beer, Academic Press, 1981, chap. 6, is that the photovoltaic diode volume and cross-sectional area are reduced without reduction in infrared radiation absorption leading to higher D * performance and increased diode resistance.
    While various embodiments of the invention have been illustrated in the accompanying drawings and described in the detailed description above, it will be understood that the invention is not limited to the embodiments shown, but that numerous rearrangements, modifications and replacements are possible without departing from the scope of the invention.
    权利要求:
    Claims (23)
    [1]
    A photovoltaic diffractive optical resonance cavity detection cell for detecting incident infrared radiation in a selected bandwidth range defined by a first wavelength and a second longer wavelength, comprising: a number of parallel, periodically separated, elongated, photovoltaic segments with a periodic mutual distance approximately equal to or less than the first wavelength of the infrared vibration, each segment containing a first portion of a first conduction type and a second portion of a second conduction type, each segment having a pn junction between the first and second sections extending substantially the length of the segment, a first electrical conductor interconnecting the first portions of the segments and a second electrical conductor interconnecting the second portions of the segments, a planar reflector for reflecting the infrared radiation, which reflector ev is parallel to and offset (offset) from the photovoltaic segments, the distance from the planar reflector to an upper surface of the segments being equal to an odd multiple of a quarter of the effective wavelength of the incident infrared radiation , and wherein the detection cell produces a detection signal between the first and second electrical conductors in response to the reception of the incident infrared radiation.
    [2]
    Detection cell according to claim 1, wherein the first electrical conductor contains interconnected conductive layer strips that contact the first portions of the photovoltaic segments.
    [3]
    The detection cell of claim 2, wherein the first conductor contains a metallic conductor layer formed in contact with at least a portion of the conductive layer interconnection strips.
    [4]
    Detection cell according to claim 1, wherein the second electrical conductor contains a planar conductive layer together with the planar reflector.
    [5]
    Detection cell according to claim 1, comprising an electrically conductive spacer layer in contact between the second parts of the photovoltaic segments and the planar reflector.
    [6]
    The sensing cell of claim 1, wherein the first electrical conductor includes a cross section structurally similar to each of the photovoltaic segments and electrically connected to common ends of the photovoltaic segments, the first electrical conductor having an electrically conductive strip layer in electrical contact with contains the first portions of the photovoltaic segments.
    [7]
    The detection cell of claim 1, wherein the first electrical conductor includes a group of interconnected planar conductive strips that are fabricated on and in electrical contact with the first portions of the photovoltaic segments.
    [8]
    The detection cell of claim 1, wherein the second electrical conductor includes a planar conductive strip made in contact with and in electrical contact with the second portions of the photovoltaic segments.
    [9]
    Detection cell according to claim 8, provided with an insulating layer between the reflector and substantial parts of the second parts of the photovoltaic segments, wherein the reflector is not in electrical contact with the planar conductive strip.
    [10]
    The detection cell of claim 1, comprising a planar substrate adhered to a planar surface of the reflector opposite the photovoltaic segments.
    [11]
    Detection cell according to claim 1, comprising a passivation layer covering the exposed surfaces of the photovoltaic segments and the first electrical conductor.
    [12]
    The detection cell of claim 1, wherein the photovoltaic segments are coplanar.
    [13]
    13. Photovoltaic diffractive optical resonance cavity detection cell for detecting incident infrared radiation in a selected bandwidth range defined by a first wavelength and a second, longer wavelength, comprising: a plurality of parallel, periodically spaced, oblong spaced photovoltaic segments which are approximately is equal to or less than the first wavelength of the infrared radiation, each segment containing a first portion of a first conductivity type and a second portion of a second conductivity type, each segment having a pn junction between the first and second portions substantially extending the length of the segment, includes a plurality of first linear conductor segments placed on and in electrical contact with the first portions of the photovoltaic segment, respectively, wherein at least one second linear conductor segment contacts the first linear conductor segments honors and electrically interconnects, a plenary, electrically conductive layer that contacts and electrically interconnects the second portions of the photovoltaic segments, a conductive, plenary reflector for reflecting the infrared radiation, which reflector physically and electrically contacts the plenary electrically conductive layer, and wherein the detection cell produces a detection signal between the electrically-connected, first linear conductor segments and the conductive ref Hector in response to the incident infrared radiation.
    [14]
    Detection cell according to claim 13, wherein a reflective surface of the reflector is parallel to and offset (offset) with respect to a plane containing an upper surface of the photovoltaic segments, and wherein the distance between the reflective surface and the plane is approximately is an odd multiple of a quarter of the effective wavelength of the incident infrared radiation.
    [15]
    Detection cell according to claim 13. provided with a plurality of substrate adhered to a planar surface of the reflector j opposite the conductive spacer layer.
    [16]
    Detection cell according to claim 13, comprising a passivation layer covering exposed surfaces of the photovoltaic segments, the first conductor segments, the second conductor segment and the spacer layer.
    [17]
    Detection cell according to claim 13. Provided with a metallic conductor line formed in physical and electrical contact with the second linear conductor.
    [18]
    Detection cell according to claim 13, wherein the photovoltaic segments are coplanar.
    [19]
    19. Photovoltaic diffractive optical resonance cavity detection cell for detecting incident infrared radiation in a selected bandwidth range defined by a first wavelength and a two-second, longer wavelength, comprising: a plurality of parallel, periodically separated, elongated first photovoltaic segments with a periodic distance approximately equal to or less than the first wavelength of the in-red radiation, each first photovoltaic segment containing a first portion of a first conduction type and a second portion of a second conduction type, each first segment having a pn junction between the first and second portions extending substantially the length of the segment, a plurality of parallel periodically separated elongated second photovoltaic segments having a periodic distance approximately equal to or less than the first wavelength of the infrared radiation, each second photovoltaic segment comprising a first portion of a first conduction type and a second portion of a second conduction type, each second segment containing a pn junction between the first and second portions extending substantially the length of the segment, the second photovoltaic segments are placed transverse to the first photovoltaic segments, the first and second photovoltaic segments forming a two-dimensional grating, the first portions of the first photovoltaic segments being electrically connected to the first portions of the second photovoltaic taic segments and the second portions of the first photovoltaic segments are electrically connected to the second portions of the second photovoltaic segments, a plurality of first linear conductor segments disposed and electrically contacting the first portions of the first photovoltaic segments, and a number of second linear conductor segments placed on the first portions of the second photovoltaic segments and electrically contacting them, the first linear conductors being electrically connected to the second linear conductors, a plenary, electrically conductive layer that contacts the second portions of the first and second photovoltaic segments and electrically interconnecting, a conductive, planar reflector for reflecting the infrared radiation, said reflector physically and electrically contacting the planar electrically conductive layer, and the detection cell detecting a detection signal between the electrically interconnected first and second linear conductor segments and the conductive reflector in response to the incident infrared radiation.
    [20]
    The detection cell of claim 19. wherein a reflective surface of the reflector is parallel to and offset from a plane containing an upper surface of the first and second photovoltaic segments, and wherein the distance between the reflective surface and the plane is an odd multiple of a quarter of the effective wavelength of the incident infrared radiation.
    [21]
    A detection cell according to claim 19. provided with a planar substrate adhered to a planar surface of the reflector opposite the conductive spacer layer.
    [22]
    A detection cell according to claim 19. provided with a passivatle layer covering exposed surfaces of the first and second photovoltaic segments, the first and second linear conductor segments and the spacer layer.
    [23]
    The detection cell of claim 19. wherein the first and second photovoltaic segments are coplanar.
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    法律状态:
    2001-06-01| A1C| A request for examination has been filed|
    2002-09-02| CNR| Transfer of rights (patent application after its laying open for public inspection)|Free format text: LOCKHEED MARTIN CORPORATION;LOCKHEED MARTIN TACTICAL SYSTEMS, INC. |
    2002-09-02| DNT| Communications of changes of names of applicants whose applications have been laid open to public inspection|Free format text: LOCKHEED MARTIN VOUGHT SYSTEMS CORPORATION |
    2008-12-01| V1| Lapsed because of non-payment of the annual fee|Effective date: 20081001 |
    优先权:
    申请号 | 申请日 | 专利标题
    US08/218,472|US6133570A|1994-03-15|1994-03-15|Semiconductor photovoltaic diffractive resonant optical cavity infrared detector|
    US21847294|1994-03-15|
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