Method of manufacturing semiconductor device and semiconductor device

专利摘要:
A method of manufacturing a semiconductor device of the present invention includes in this order: a semiconductor base body preparing step; a first trench forming step; a first insulation film forming step of forming a first insulation film 126a; a gate insulation film forming step; a gate electrode forming step; a second trench forming step of forming a second trench 140 in the inside of a first trench 116 by removing a center portion of the first insulation film 126a; a second insulation film forming step of forming a second insulation film 126b in the inside of the second trench 140 under a condition that a gap 122 remain in the inside of the second trench; a shield electrode forming step of forming a shield electrode 124 in the inside of the gap 122; and a source electrode forming step of forming a source electrode. According to the method of manufacturing a semiconductor device of the present invention, a step of establishing the connection between the shield electrode and the source electrode can be simplified, and it is possible to manufacture a semiconductor device with high degree of freedom in designing the semiconductor device.
公开号:NL2018616A
申请号:NL2018616
申请日:2017-03-30
公开日:2017-10-05
发明作者:OHTANI Kinya
申请人:Shindengen Electric Mfg；
IPC主号:

专利说明:

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Technical Field [0001]
The present invention relates to a method of manufacturing a semiconductor device and a semiconductor device.
Background Art [0002]
Conventionally, there has been known a semiconductor device which includes a shield gate structure of an in-plane direction separation type where a gate electrode and a shield electrode are separated from each other in an in-plane direction (see patent literature 1, for example).
[0003]
As shown in Fig. 15 to Fig. 18, the conventional semiconductor device 900 can be manufactured by carrying out the following method (a conventional method of manufacturing a semiconductor device). That is, the conventional semiconductor device 900 can be manufactured by carrying out (1) a semiconductor base body preparing step of preparing a semiconductor base body 910 having an n+-type first semicond uclor layer 912 and an n'-type second semiconductor layer 914 having lower concentration than the first semiconductor layer 912 (see Fig. 15(a)), (2) a first trench forming step of forming a predetermined first trench 916 on the second semiconductor layer 914 (see Fig. 15(b)), (3) a first insulation film forming step of forming a first insulation film 926 in the inside of the first trench 916 by a thermal oxidation method under a condition that a first gap 922 remain at the center in the inside of the first trench 916 (see Fig. 15(c)), (4) a shield electrode forming step of forming a shield electrode 924 in the inside of the first gap 922 (see Fig. 15(d) and Fig. 16(a)), (5) a first insulation film etching back step of etching back the first insulation film 926 while leaving a lower portion of the first trench 916 (see Fig. 16(b)), (6) a gate insulation film forming step of forming a gate insulation film 918 in the inside of a recessed portion 950 under a condition that a second gap 952 remain in the inside of a recessed portion 950 formed of side walls of the shield electrode 924, side walls of an upper portion of the first trench 916 and an upper surface of the etched-back first insulation film 926 (see Fig. 16(c)), (Ί) a gate electrode forming step of forming a gate electrode 920 in the inside of the second gap 952 (see Fig. 16(d) and Fig. 17(a)), (8) a dopant region forming step of forming a base region 928, a source region 930 (first conductive-type high-concentration diffusion region) and a p+-type contact region 932 (see Fig. 17(b) to Fig. 17(d)), (9) a protective insulation film forming step of forming a protective insulation film 934 on the gate electrode 920 and the gate insulation film 918 (see Fig. 18(a)), (10) an insulation film removing step of removing insulation films (the gate insulation film and the protective insulation film) formed above the shield electrode 924 (see Fig. 18(b)), and (11) a source electrode forming step of forming a source electrode 936 such that the source electrode 936 is electrically connected to the shield electrode 924 (see Fig. 18(c)).
Citation List Patent Literature [0004] PTL 1: JP-T-2007-529115 Summary of Invention Technical Problem [0005]
However, the conventional method of manufacturing a semiconductor device includes the gate electrode forming step as a step which comes after the shield electrode forming step. As a result, the insulation films (the gale insulation film and the protective insulation film] are formed above the shield electrode 924 by a step which comes before the source electrode forming step (see Fig. 18(a)). Accordingly, to establish the connection between the shield electrode 924 and the source electrode 936, an insulation film removing step of removing the insulation films (the gate insulation film and the protective insulation film) formed above the shield electrode 924 becomes necessary (see Fig. 18(b)) and hence, there exists a drawback that the step of establishing connection between the shield electrode 924 and the source electrode 936 becomes cumbersome.
[0006]
Further, in the conventional method of manufacturing a semiconductor device, in the first insulation film forming step, the first insulation film 926 is formed in the inside of the first trench 916 by a thermal oxidation method under the condition that the first gap 922 remain at the center in the inside of the first trench 916 (see Fig. 15(c))and, thereafter, in the sealed electrode forming step, the sealed electrode 924 is formed in the inside of the first gap 922 (see Fig. 15(d) and Fig. 16(a)). Accordingly, it is difficult to set a thickness of the insulation film on a sealed electrode bottom portion side (first insulation film) and a thickness of the insulation film on a sealed electrode side portion side (first insulation film) to desired thicknesses thus also giving rise to a drawback that it is difficult to manufacture a semiconductor device with a high degree of freedom in designing the semiconductor device.
[0007]
The present invention has been made to overcome the above-mentioned drawbacks, and it is an object of the present invention to provide a method of manufacturing a semiconductor device by which a step of establishing the connection between a shield electrode and a source electrode can be simplified, and a semiconductor device can be manufactured with a high degree of freedom in designing the semiconductor device.
It is another object of the present invention to provide a semiconductor device which is manufactured by such a method of manufacturing a semiconductor device.
Solution to Problem [0008] [1] According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device having a shield gate structure of an in-plane direction separation type where a gate electrode and a shield electrode are separated from each other in an in-plane direction, the method including in the following order: a semiconductor base body preparing step of preparing a semiconductor base body having a first conductive-type first semiconductor layer and a first conductive-type second semiconductor layer having lower concentration than the first semiconductor layer; a first trench forming step of forming a predetermined first trench on the second semiconductor layer; a first insulation film forming step of forming a first insulation film such that the first insulation film is filled in a lower portion of the first trench; a gate insulation film forming step of forming a gate insulation film on a side wall of an upper portion of the first trench; a gate electrode forming step of forming the gate electrode made of polysilicon with the gate insulation film interposed between the upper portion of the first trench and the gate electrode; a second trench forming step of forming a second trench in the inside of the first trench by removing a center portion of the first insulation film by etching; a second insulation film forming step of forming a second insulation film in at least the inside of the second trench under a condition that a gap remain in the inside of the second trench; a shield electrode forming step of forming the shield electrode in the inside of the gap; and a source electrode forming step of forming a source electrode such that the source electrode is electrically connected to the shield electrode.
[0009] [2] In the method of manufacturing a semiconductor device of the present invention, it is preferable that, in the second insulation film forming step, the second insulation film be formed such that a thickness of the second insulation film is larger than a thickness of the gate insulation film.
[0010] [3] In the method of manufacturing a semiconductor device of the present invention, it is preferable that, in the second insulation film forming step, assuming a thickness of the second insulation film between a bottom of the gap and a bottom of the first trench as Dl, a thickness of the first insulation film between a side wall of the gap at a depth position of the bottom of the gap and a side wall of the first trench as d, and a thickness of the second insulation film between the side wall of the gap at the depth position of the bottom of the gap and the side wall of the first trench as D2, the second insulation film be formed such that a relationship of Dl<d+D2 is satisfied.
[0011] [4] In the method of manufacturing a semiconductor device of the present invention, it is preferable that, in the second trench forming step, the second trench be formed such that the second trench reaches a depth position of the first trench.
[0012] [5] In the method of manufacturing a semiconductor device of the present invention, it is preferable that, in the second trench forming step, the second trench be formed such that the second trench reaches a depth position deeper than a depth position of the first trench.
[0013] [6] In the method of manufacturing a semiconductor device of the present invention, it is preferable that the method further include a second conductive-type diffusion region forming step of forming a second conductive-type diffusion region such that the second conductive-type diffusion region is brought into contact with the bottom of the second trench, between the second trench forming step and the second insulation film forming step.
[0014] [7] In the method of manufacturing a semiconductor device of the present invention, it is preferable that, in the second trench forming step, a trench having side surfaces which form a bottom narrowed tapered shape be formed as the second trench.
[0015] [8] In the method of manufacturing a semiconductor device of the present invention, it is preferable that the method further include: a base region forming step of forming a second conductive-type base region on a surface of the second semiconductor layer in a region where the first trench is not formed as viewed in a plan view; and a first conductive-type high concentration diffusion region forming step of forming a first conductive-type high concentration diffusion region on a surface of the base region such that at least a portion of the first conductive-type high concentration diffusion region is exposed on the side wall of the first trench, between the gate electrode forming step and the second trench forming step.
[0016] [9] In the method of manufacturing a semiconductor device of the present invention, it is preferable that the method further include: a contact region forming step of forming a second conductive-type contact region in a predetermined region of a surface of the base region between the gate electrode forming step and the second trench forming step; and a second insulation film etching back step where the second insulation film in a region where the first trench is not formed as viewed in a plan view is removed by etching back between the shield electrode forming step and the source electrode forming step, wherein in the source electrode forming step, the source electrode is formed such that the source electrode is directly connected to the shield electrode, the first conductive-type high concentration diffusion region and the contact region.
[0017] [10] In the method of manufacturing a semiconductor device of the present invention, it is preferable that the method further include: an opening forming step of forming a predetermined opening in the second insulation film; and a metal plug forming step of forming a metal plug by filling the inside of the opening with metal between the shield electrode forming step and the source electrode forming step, wherein in the source electrode forming step, the source electrode be formed such that the source electrode is directly connected to the shield electrode and is connected to the first conductive-type high concentration diffusion region and the base region through the metal plug.
[0018] [11] In the method of manufacturing a semiconductor device of the present invention, it is preferable that, in the first insulation film forming step, the first insulation film be formed by a CVD method.
[0019] [12] In the method of manufacturing a semiconductor device of the present invention, it is preferable that, in the first insulation film forming step, the first insulation film be formed by a thermal oxidation method.
[0020] [13] In the method of manufacturing a semiconductor device of the present invention, it is preferable that, in the second insulation film forming step, the second insulation film be formed by a CVD method.
[0021] [14] In the method of manufacturing a semiconductor device of the present invention, it is preferable that, in the second insulation film forming step, the second insulation film be formed by a thermal oxidation method.
[0022] [15] According to another aspect of the present invention, there is provided a semiconductor device having a shield gate structure of an in-plane direction separation type where a gate electrode and a shield electrode are separated from each other in an in-plane direction, the semiconductor device including: a semiconductor base body having a first conductive-type first semiconductor layer and a first conductive-type second semiconductor layer having lower concentration than the first semiconductor layer; a predetermined trench positioned on a surface of the second semiconductor layer and formed at a depth where the trench does not reach the first semiconductor layer; the gate electrode made of polysilicon and formed on a side wall of an upper portion of the trench with a gate insulation film interposed between the gate electrode and the side wall; the shield electrode formed on a center portion of the trench in a state where the shield electrode is spaced apart from the gate electrode; and an insulation region configured to expand between the gate electrode and the shield electrode in the inside of the trench so as to make the shield electrode spaced apart from the gate electrode, and configured to expand along side walls and a bottom of the trench so as to make the shield electrode spaced apart from the side walls and the bottom of the trench, wherein a thickness of the insulation region interposed between the gate electrode and the shield electrode is set larger than a thickness of the gate insulation film.
[0023] [16] In the semiconductor device of the present invention, it is preferable that assuming a thickness of the insulation region between a bottom of the shield electrode and the bottom of the trench as D1, and a thickness of the insulation region between a side wall of the shield electrode at a depth position of the bottom of the shield electrode and a side wall of the trench as d+D2, a relationship of Dl<d+D2 be satisfied.
[0024] [17] In the semiconductor device of the present invention, it is preferable that a second conductive-type base region be formed on the surface of the second semiconductor layer in a region where the trench is not formed as viewed in a plan view, and a first conductive-type high concentration dopant region having a higher concentration than other regions of the second semiconductor layer be formed in a depth region ranging from a depth position of a lowermost surface of the base region to a depth position shallower than a depth position of the bottom of the trench in the second semiconductor layer.
Advantageous Effects of Invention [0025]
According to the method of manufacturing a semiconductor device of the present invention, the method includes the shield electrode forming step as a step which comes alter the gate electrode forming step and hence, the insulation films (for example, the gate insulation film and the protective insulation film) are not formed above the shield electrode by a step which comes before the source electrode forming step. Accordingly, an insulation film removing step of removing the insulation films (the gate insulation film and the protective insulation film) becomes unnecessary and hence, a step of establishing the connection between the shield electrode and the source electrode can be simplified.
[0026]
According to the method of manufacturing a semiconductor device of the present invention, the second trench is formed in the inside of the first trench by removing the center portion of the first insulation film by etching and, thereafter, the second insulation film is formed in the inside of the second trench under the condition that the gap remain in the inside of the second trench. Accordingly, a thickness of the insulation film (second insulation film) on a shield electrode bottom portion side and thicknesses of the insulation films (the first insulation film and the second insulation film) on a shield electrode side portion side can be easily set to desired thicknesses. As a result, the semiconductor device can be manufactured at a high degree of freedom in designing the semiconductor device.
[0027]
According to the semiconductor device of the present invention, the thickness of the insulation region interposed between the gate electrode and the shield electrode is set larger than the thickness of the gate insulation film and hence, a withstand voltage between the gate electrode and the shield electrode can be increased compared to conventional semiconductor devices.
[0028]
According to the semiconductor device of the present invention, the semiconductor device includes the predetermined trench positioned on the surface of the second semiconductor layer and formed at the depth that the trench does not reach the first semiconductor layer and hence, there exists the second semiconductor layer having lower dopant concentration than the first semiconductor layer between the trench and the first semiconductor layer. Accordingly, a depletion layer easily expands at the time of turning off the semiconductor device compared to a case where the trench is formed at a depth where the trench reaches the first semiconductor layer below a lower side of the trench (a case where the first semiconductor layer is brought into contact with the bottom of the trench) so that a withstand voltage betw een the drain electrode and the shield electrode (source electrode) can be increased compared to the case where the trench is formed at the depth that the trench reaches the first semiconductor layer.
[0029]
According to the semiconductor device of the present invention, the semiconductor device includes the predetermined trench positioned on the surface of the second semiconductor layer and formed at the depth where the trench does not reach the first semiconductor layer and hence, there exists the second semiconductor layer having low'er dopant concentration than the first semiconductor layer between the trench and the first semiconductor layer. Accordingly, a depletion layer easily expands at the time of turning off the semiconductor device compared to a case where the trench is formed at a depth w'here the trench reaches the first semiconductor layer below a lower side of the trench (a case where the first semiconductor layer is brought into contact with the bottom of the trench). Accordingly, a distance between the gate electrode and a non-depleted portion of the second semiconductor layer becomes long and hence, the gate-drain capacitance Cgd becomes small whereby a gate-source voltage Vos ("VddXCgd/ (Cgs+Cgd)) which is induced on the gate electrode at the time of turning off the semiconductor device minimally exceeds a threshold voltage Vth-Accordingly, a self-tum-on phenomenon which may occur when a plurality of semiconductor devices are connected in series minimally occurs and hence, a voltage breakdown resistance during a circuit operation can be increased.
[0030]
According to the semiconductor device of the present invention, the semiconductor device includes the predetermined trench positioned on the surface of the second semiconductor layer and formed at the depth where the trench does not reach the first semiconductor layer and hence, the gate-drain capacitance CGd can be made small as described previously. Accordingly, output capacitance Coss and feedback capacitance Crss can be made small and hence, a turn-off period can be shortened.
According to the semiconductor device of the present invention, the semiconductor device includes the predetermined trench positioned on the surface of the second semiconductor layer and formed at the depth where the trench does not reach the first semiconductor layer and hence, the gate-drain capacitance C(iD can be made small as described previously. Further, the thickness of the insulation region interposed between the gate electrode and the shield electrode is larger than the thickness of the gate insulation film and hence, a gate-source capacitance CGS between the gate electrode and the shield electrode can be made small. Accordingly, it is possible to make both the gate-drain capacitance CGD and the gate-source capacitance Cas small and hence, a gate-source voltage Vgs (=VDdXCGd/ (Cgs+Cgd)) which is induced on the gate electrode at the time of turning off the semiconductor device further minimally exceeds a threshold voltage Vth· Accordingly, a self-turn-on phenomenon which may occur when a plurality of semiconductor devices are connected in series further minimally occurs and hence, a voltage breakdown resistance during a circuit operation can be further increased.
Brief Description of Drawings [0031]
Fig. 1(a) and Fig. 1(b) are views for describing a semiconductor device 100 of an embodiment 1, wherein Fig. 1(a) is an enlarged cross-sectional view (hereinafter simply referred to as a cross-sectional view) of an essential part of the semiconductor device 100 and Fig. 1(b) is an enlarged plan view (hereinafter simply referred to as a plan view) of the essential part of the semiconductor device 100 (a source electrode 136, a source region 130 and a contact region 132 not shown in Fig. 1(b) for the sake of brevity of explanation);
Fig. 2(a) to Fig. 2(d) are cross-sectional views for describing respective steps of a method of manufacturing a semiconductor device of the embodiment 1;
Fig. 3(a) to Fig. 3(d) are cross-sectional views for describing respective steps of the method of manufacturing a semiconductor device of the embodiment 1;
Fig. 4(a) to Fig. 4(d) are cross-sectional views for describing respective steps of the method of manufacturing a semiconductor device of the embodiment 1;
Fig. 5(a) to Fig. 5(d) are cross-sectional views for describing respective steps of the method of manufacturing a semiconductor device of the embodiment 1;
Fig. 6 is a cross-sectional view of a semiconductor device 101 of an embodiment 2;
Fig. 7(a) to Fig. 7(c) are cross-sectional views for describing respective steps of a method of manufacturing a semiconductor device of the embodiment 2;
Fig. 8 is a cross-sectional view of a semiconductor device 102 of an embodiment 3;
Fig. 9(a) to Fig. 9(c) are cross-sectional views for describing respective steps of a method of manufacturing a semiconductor device of the embodiment 3;
Fig. 10 is a cross-sectional view of a semiconductor device 103 of an embodiment 4;
Fig. 11(a) to Fig. 11(c) are cross-sectional views for describing respective steps of a method of manufacturing a semiconductor device of the embodiment 4;
Fig. 12 is a cross-sectional view of a semiconductor device 104 of an embodiment 5;
Fig. 13(a) to Fig. 13(c) are cross-sectional views for describing respective steps of a method of manufacturing a semiconductor device of the embodiment 5;
Fig. 14 is a cross-sectional view of a semiconductor device 105 of an embodiment 6;
Fig. 15(a) to Fig. 15(d) are views for describing respective steps of a conventional method of manufacturing a semiconductor device;
Fig. 16(a) to Fig. 16(d) are views for describing respective steps of a conventional method of manufacturing a semiconductor device;
Fig. 17(a) to Fig. 17(d) are views for describing respective steps of a conventional method of manufacturing a semiconductor device; and
Fig. 18(a) to Fig. 18(c) are views for describing respective steps of a conventional method of manufacturing a semiconductor device (symbol 938 indicating a drain electrode in Fig. 18(c)).
Description of Embodiments [0032]
Hereinafter, a method of manufacturing a semiconductor device and a semiconductor device according to the present invention are described in accordance with embodiments shown in the drawings. The respective drawings are schematic views and hence, the drawings do not always strictly reflect actual sizes.
[0033] [Embodiment 1] 1. Configuration of semiconductor device 100 according to embodiment 1
The semiconductor device 100 of the embodiment 1 is a power MOSFET having a shield gate structure of an in-plane direction separation type where a gate electrode and a shield electrode are separated from each other in an in-plane direction.
[0034]
As shown in Fig. 1, the semiconductor device 100 of the embodiment 1 includes: a semiconductor base body 110 having an n ‘-type first semiconductor layer 112 and an n'-type second semiconductor layer 114 having lower concentration than the n+-type first semiconductor layer 112; a predetermined trench 116 (first trench) positioned on a surface of the second semiconductor layer 114 and formed at a depth where the trench 116 does not reach the first semiconductor layer 112; a gate electrode 120 made of polysilicon and formed on a side wall of tin upper portion of the trench 116 with a gate insulation film 118 interposed between the gate electrode 120 and the side wall; a shield electrode 124 formed on the center portion of the trench 116 in a state where the shield electrode 124 is spaced apart from the gate electrode 120; an insulation region 126 configured to expand between the gate electrode 120 and the shield electrode 124 in the inside of the trench 116 so as to make the shield electrode 124 spaced apart from the gate electrode 120, and configured to expand along side walls and a bottom of the trench 116 so as to make the shield electrode 124 spaced apart from the side walls and the bottom of the trench 116; a base region 128 formed on a surface of the second semiconductor layer 114 in a region where the trench 116 is not formed as viewed in a plan view; a source region 130 (first conductive-type high concentration diffusion region) having a portion thereof exposed to the side wall of the trench 116 formed on the surface of the base region 128; a p+-type contact region 132 formed on a predetermined region of a surface of the based region 128 (a region where the source region 130 is not formed); a source electrode 136 directly disposed on a surface of the shield electrode 124, disposed on a surface of the gate electrode 120 with a protective insulation film 134 interposed therebetween, and directly connected to the shield electrode 124, the source region 130 and the contact region 132; and a drain electrode 138 formed on a surface of the first semiconductor layer 112.
[0035]
In the semiconductor device 100 of the embodiment 1, a thickness of the insulation region 126 interposed between the gate electrode 120 and the shield electrode 124 is set larger than a thickness of the gate insulation film 118.
[0036]
In the semiconductor device 100 of the embodiment 1, assuming a thickness of the insulation region 126 between a bottom of the shield electrode 124 and a bottom of the trench 116 as Dl, and a thickness of the insulation region 126 between a side wall of the shield electrode 124 at a depth position of the bottom of the shield electrode 124 and a side wall of the trench 116 (a total depth of a thickness of a first insulation film 126a described later and a thickness of a second insulation film 126b described later) as d+D2, a relationship of Dl<d+D2 is satisfied.
[0037]
In the embodiment 1, all of the trench 116, the gate electrode 120, the base region 128, the source region 130 and the contact region 132 are formed in a stripe shape (see Fig. 1(b)).
[0038] A thickness of the first semiconductor layer 112 is set to a value which falls within a range of from 50pm to 500pm (for example, 350pm), and dopant concentration of the first semiconductor layer 112 is set to a value which falls within a range of from lxl()18cm'3 to lxl02lcm'> (for example, lxl0l9cm‘3). A thickness of the second semiconductor layer 114 in a region where the trench 116 is not formed is set to a value which falls within a range of from 3pm to 50pm (for example, 15pm), and dopant concentration of the second semiconductor layer 114 is set to a fixed value regardless of a depth and is set to a value which falls within a range of from Ix l0l4cm'’ to lxl0l9cm‘3 (for example, lxlO’fom'3). A thickness of the base region 128 is set to a value which falls within a range of from 0. 5pm to 10pm (for example, 5pm), and dopant concentration of the base region 128 is set to a value which falls within a range of from lxlOl6cm'3 to lxl019cm'3 (for example, lxl017cm'3).
[0039] A depth of the trench 116 is set to a value which falls within a range of from 1pm to 20pm (for example, 10pm), a pitch of the trenches 116 is set to a value which falls within a range of from 3pm to 20pm (for example, 10pm), and an opening width of the trench 116 is set to a value which falls within a range of from 0.3pm to 19pm (for example, 7pm). The gate insulation film 118 is formed of a silicon dioxide film which is formed by, for example, a thermal oxidation method, and a thickness of the gate insulation film 118 is set to a value which falls within a range of from 20nm to 200nm (for example,lOOnm). The gate electrode 120 is made of polysilicon of low resistance formed by a CVD method, for example, and a thickness of the gate electrode 120 is set to a value which falls within a range of from 0.1pm to 5pm (for example, 2pm).
[0040] A distance between the shield electrode 124 and the gate electrode 120 is set to a value which falls within a range of from 0.02pm to 3pm (for example, 1pm), and a distance between the shield electrode 124 and a bottom of the trench 116 is set to a value which falls within a range of from 0.1pm to 3pm (for example,2pm), and a distance between the shield electrode 124 and a side wall of the trench 116 at a depth position of the bottom of the shield electrode 124 is set to a value which falls within a range of from 0.1pm to 8pm (for example, 3pm). A depth position of an upper surface of the shield electrode 124 with respect to the protective insulation film 134 is set to a value which falls w'ithin a range of from 0.01pm to 2pm.
[0041] A depth of the source region 130 is set to a value which falls within a range of from 1pm to 3pm (for example, 2pm), and dopant concentration of the source region 130 is set to a value which falls within a range of from lxlOl8cm3 to 1 x 102°cm3 (for example, 2xlOl9cm3). A depth of the contact region 132 is set to a value which falls within a range of from lpm to 3pm (for example, 2pm), and dopant concentration of the contact region 132 is set to a value w'hich falls within a range of from lxl018cm'3to lxl020cnv’ (for example, 2xl0l9cm~3). The protective insulation film 134 is, for example, formed of a silicon dioxide film which is formed by a CVD method, and a thickness of the protective insulation film 134 is set to a value which falls within a range of from 0.5pm to 3μηι (for example, 1 pm).
[0042]
The source electrode 136 is formed of, for example, an A1 film or an A1 alloy film (for example, AlSi film), and a thickness of the source electrode 136 is set to a value which falls within a range of from 1 pm to 10pm (for example,3pm). The drain electrode 138 is formed of a stacked film formed by stacking a Ti layer, an Ni layer and an Au layer in this order, and a thickness of the drain electrode 138 is set to a value which falls within a range of from 0.2pm to 1.5pm (for example, lpm).
[0043] 2. Advantageous effects acquired by semiconductor device 100 of embodiment 1
According to the semiconductor device 100 of the embodiment 1, the thickness of the insulation region 126 interposed between the gate electrode 120 and the shield electrode 124 is set larger than the thickness of the gate insulation film 118 and hence, a withstand voltage between the gate electrode 120 and the shield electrode 124 can be increased compared to the conventional semiconductor device 900.
[0044]
According to the semiconductor device 100 of the embodiment 1, the semiconductor device 100 includes the predetermined trench 116 positioned on the surface of the second semiconductor layer 114 and formed at the depth where the trench 116 does not reach the first semiconductor layer 112 and hence, there exists the second semiconductor layer 114 having lower dopant concentration than the first semiconductor layer 112 between the trench 116 and the first semiconductor layer 112. Accordingly, a depletion layer easily expands at the time of turning off the semiconductor device 100 compared to a case where the trench 116 is formed at a depth where the trench 116 reaches the first semiconductor layer 112 below a lower side of the trench 116(acase where the first semiconductor layer 112 is brought into contact with the bottom of the trench 116) so that a withstand voltage between the drain electrode and the shield electrode 124 (source electrode) can be increased.
[0045]
According to the semiconductor device 100 of the embodiment 1, the semiconductor device 100 includes the predetermined trench 116 positioned on the surface of the second semiconductor layer 114 and formed at the depth where the trench 116 does not reach the first semiconductor layer 112 and hence, there exists the second semiconductor layer 114 having lower dopant concentration than the first semiconductor layer 112 between the trench 116 and the first semiconductor layer 112. Accordingly, a depletion layer easily expands at the time of turning off the semiconductor device 100 compared to a case where the trench 116 is formed at a depth where the trench 116 reaches the first semiconductor layer 112 below a lower side of the trench 116 (a case where the first semiconductor layer 112 is brought into contact with the bottom of the trench 116). Accordingly, a distance between the gate electrode 120 and a non-depleted portion of the second semiconductor layer 114 becomes long and hence, the gate-drain capacitance CGd becomes small whereby a gate-source voltage Vc,s (=VDDxCc,n/ (Cgs+Cgd)) which is induced on the gate electrode 120 at the time of turning off the semiconductor device 100 minimally exceeds a threshold voltage VTH. Accordingly, a self-turn-on phenomenon which may occur when a plurality of semiconductor devices are connected in series minimally occurs and hence, a voltage breakdown resistance during a circuit operation can be increased.
[0046]
According to the semiconductor device 100 of the embodiment 1, the semiconductor device 100 includes the predetermined trench 116 positioned on the surface of the second semiconductor layer 114 and formed at the depth where the trench 116 does not reach the first semiconductor layer 112 and hence, the gate-drain capacitance CGD can be made small as described previously. Accordingly, output capacitance Coss and feedback capacitance Crss can be made small and hence, a turn-off period can be shortened.
[0047]
According to the semiconductor device 100 of the embodiment 1, the semiconductor device 100 includes the predetermined trench 116 positioned on the surface of the second semiconductor layer 114 and formed at the depth where the trench 116 does not reach the first semiconductor layer 112 and hence, the gate-drain capacitance CGd can be made small as described previously. Further, the thickness of the insulation region 126 interposed between the gate electrode 120 and the shield electrode 124 is larger than the thickness of the gate insulation film 118 and hence, a gale-source capacitance CGs between the gate electrode 120 and the shield electrode 124 can be made small. Accordingly, it is possible to make both the gate-drain capacitance CGd and the gate-source capacitance CGs small and hence, a gate-source voltage VGS (=VddxCGd/ (CGs+CGd)) which is induced on the gate electrode 120 at the time of turning off the semiconductor device 100 further minimally exceeds a threshold voltage Vth· Accordingly, a self-turn-on phenomenon w hich may occur when a plurality of semiconductor devices are connected in series further minimally occurs and hence, a voltage breakdown resistance during a circuit operation can be further increased.
[0048] 3. Method of manufacturing semiconductor device of embodiment 1
The semiconductor device 100 of this embodiment 1 can be manufactured by a manufacturing method having the following steps (the method of manufacturing a semiconductor device of the embodiment 1).
[0049] (1) Semiconductor base body preparing step
First, a semiconductor base body 110 having an n+-type first semiconductor layer 112 and an n-type second semiconductor layer 114 having lower concentration than the first semiconductor layer 112 is prepared (see Fig. 2(a)). A suitable semiconductor base body can be used as the semiconductor base body 110. For example, a semiconductor base body can be used where an n'-type second semiconductor layer 114 is formed on an n+-type first semiconductor layer 112 by an epitaxial growth method. Although a semiconductor base body made of silicon is used as the semiconductor base body 110 in the embodiment 1, a semiconductor base body made of a material other than silicon may be used as the semiconductor base body 110.
[0050] (2) First trench forming step
Next, a predetermined first trench 116 is formed on the second semiconductor layer 114 in such a manner that a mask having a predetermined opening (not shown in the drawing) is formed on a surface of the second semiconductor layer 114, and the predetermined first trench 116 is formed by etching the second semiconductor layer 114 using the mask (see Fig. 2(b)). In this step, the first trench 116 is formed at a depth where the first trench 116 does not reach the first semiconductor layer 112.
[0051] (3) First insulation film forming step
Next, a silicon oxide film 126a’ having a predetermined thickness is formed on a surface of the second semiconductor layer 114 (including the inside of the first trench 116) by a CVD method (see Fig. 2(c)). A thickness of the silicon oxide film 126a’ is set to a value which falls within a range of from 0.5μιη to 5pm, for example. Next, a first insulation film 126a is formed such that the silicon oxide film 126a’ other than the lower portion of the first trench 116 is removed by etching back so that the first insulation film 126a is formed so as to be filled in a lower portion of the first trench 116 (see Fig. 2(d)).
[0052] (4) Gate insulation film forming step
Next, a silicon oxide film is formed on surfaces of side walls of an upper portion of the first trench 116 and surfaces of the first insulation film 126a and the second semiconductor layer 114 (including the surfaces of the side walls of the upper portion of the first trench 116) by a thermal oxidation method (see Fig. 3(a)). The silicon oxide film formed on the side walls of the upper portion of the first trench 116 forms the gate insulation film 118. A thickness of the gate insulation film 118 is set to a value which falls within a range of from 20nm to 200nm, for example.
[0053J (5) Gate electrode forming step
Next, a polysilicon layer 120’ is formed on a surface of the silicon oxide film by a CVD method (see Fig. 3(b)). Then, gate electrodes 120 made of polysilicon are formed by etching back the polysilicon layer 120’ (see Fig. 3(c)). In the gate electrode layer forming step, the polysilicon layer 120’ is etched back such that the gate electrodes 120 are formed at positions spaced apart from each other with a predetermined distance therebetween in the inside of the first trench 116.
[0054] (6) Steps of forming base regions 128, source regions 130 and contact regions 132
Next, p-type dopant (for example, boron) is injected by ion implantation into a surface of the second semiconductor layer 114 in regions where the first trench 116 is not formed as viewed in a plan view. Then, a mask having openings corresponding to contact regions 132 (not shown in the drawing) is formed on the second semiconductor layer 114, and a p-type dopant (for example, boron) is injected by ion implantation into a shallower depth position with higher dopant concentration by means of the mask (see Fig. 3(d)). Next, a mask having openings corresponding to the source regions 130 (not shown in the drawing) is formed on the surface of the second semiconductor layer 114, and an n-type dopant (for example, phosphorus) is injected by ion implantation to the surface of the second semiconductor layer 114 by means of the mask (see Fig. 4(a)). Then, by thermally diffusing the p-type dopant and the n-type dopant injected into the second semiconductor layer 114 by ion implantation, the base regions 128, the source regions 130 and the contact regions 132 are formed (see Fig. 4(b)).
[0055] (7) Second trench forming step
Next, a mask having an opening at a center portion of the first insulation film 126a (not shown in the drawing) is formed, and a second trench 140 is formed in the first trench 116 by removing the center portion of the first insulation film 126a by etching using the mask (see Fig. 4(c)). An opening width of the second trench 140 is equal to a distance between two gate electrodes 120 in the first trench 116 and, for example, the opening width is set to a value which falls within a range of from 0.1 μιη to 5pm.
[0056]
In the second trench forming step, the second trench 140 is formed such that the second trench 140 reaches a depth position of the first trench 116.
[0057] (8) Second insulation film forming step
Next, a second insulation film 126b is formed by a thermal oxidation method in the second trench 140 under a condition that a gap remain in the second trench 140 (see Fig. 4(d)). In this step, the second insulation film 126b is also formed on the region of the second semiconductor layer 114 where the first trench 116 is not formed and a surface of the gate electrode 120. The first insulation film 126a and the second insulation film 126b form an insulation region 126, and the second insulation film 126b on the gate electrode 120 forms a protective insulation film 134.
[0058]
In the second insulation film forming step, the second insulation film 126b is formed such that a thickness of the second insulation film 126b is larger than a thickness of the gate insulation film 118. The thickness of the second insulation film 126b is set to a value which falls within a range of from 0.2μτη to 5μιη. A depth of a gap 122 is set to a value which falls within a range of from 0.5 pm to 19pm, and an opening width of the gap 122 is set to a value which falls within a range of from 0.1 pm to 5pm.
[0059]
In the second insulation film forming step, assuming a thickness of the second insulation film 126b between a bottom of the gap 122 and a bottom of the first trench 116 as Dl, a thickness of the first insulation film 126a between a side wail of the gap 122 at a depth position of the bottom of the gap 122 and a side wall of the first trench 116 as d, and a thickness of the second insulation film 126b between the side wall of the gap 122 at the depth position of the bottom of the gap 122 and the side wall of the first trench T16 as D2, the second insulation film 126b is formed such that a relationship of Dl<d+D2 is satisfied (see Fig. 1 with respect to symbols Dl, D2, d).
[0060] (9) Shield electrode forming step
Next, a polysilicon layer 124’ is formed on the whole region of the surface of the semiconductor base body 110 on a second semiconductor layer 114 side (see Fig. 5(a)). Then, a shield electrode 124 is formed by removing the polysilicon layer 124’ in a region other than the inside of the gap 122 by etching back (see Fig. 5(b)).
[0061] (10) Second insulation film etching back step
Next, the second insulation film 126b in the region where the first trench 116 is not formed as viewed in a plan view is removed by etching back until etching reaches a surface of the second semiconductor layer 114 (see Fig. 5(c)). In this step, the protective insulation film 134 on the gate electrode 120 is also removed until etching reaches the surface of the second semiconductor layer 114.
[0062] (11) Source electrode and drain electrode forming step
Next, a source electrode 136 is formed on surfaces of the source regions 130, the contact regions 132, the shield electrode 124 and the protective insulation films 134 such that the source electrode 136 is directly connected to the shield electrode 124, the source regions 130 and the contact regions 132. A drain electrode 138 is formed on a surface of the first semiconductor layer 112 (see Fig. 5(d)).
[0063]
The semiconductor device 100 of the embodiment 1 can be manufactured in accordance with the above-mentioned steps.
[0064] 4. Advantageous effects acquired by method of manufacturing a semiconductor device of embodiment 1
According to the method of manufacturing a semiconductor device of the embodiment 1, the method includes the shield electrode forming step as a step which comes after the gate electrode forming step and hence, the insulation films (for example, the gate insulation film and the protective insulation film) are not formed above the shield electrode 124 by a step which comes before the source electrode forming step. Accordingly, an insulation film removing step of removing the insulation films becomes unnecessary and hence, a step of establishing the connection between the shield electrode 124 and the source electrode 136 can be simplified.
[0065]
According to the method of manufacturing a semiconductor device of the embodiment 1, the second trench 140 is formed in the inside of the first trench 116 by removing the center portion of the first insulation film 126a by etching and, thereafter, the second insulation film 126b is formed in the inside of the second trench 140 under the condition that the gap remain in the inside of the second trench 140. Accordingly, a thickness of the insulation film (second insulation film) on a shield electrode bottom portion side and thicknesses of the insulation films (the first insulation film and the second insulation film) on a shield electrode side portion side can be easily set to desired thicknesses. As a result, the semiconductor device can be manufactured at a high degree of freedom in designing the semiconductor device.
[0066]
It is considered in general that an oxide film formed by thermally oxidizing single crystal silicon and an oxide film formed by thermally oxidizing polysilicon differ from each other in film quality. That is, it is considered that a rate of SiCF is relatively high in an oxide film formed by thermally oxidizing single crystal silicon, while a rate of SiOx is also high besides Si02 in an oxide film formed by thermally oxidizing polysilicon. Accordingly, irregularities are liable to occur in an oxide film formed by thermally oxidizing polysilicon of the gate electrode 120 (an oxide film between the gate electrode 120 and the shield electrode 124) and hence, irregularities are liable to occur in ESD breakdown resistance between the gate electrode 120 and the shield electrode 124.
Howe ver, according to the method of manufacturing a semiconductor device of the embodiment 1, as described above, the thickness of the insulation film on the shield electrode bottom portion side (second insulation film) and the thickness of the insulation film on the shield electrode side portion side (the first insulation film and the second insulation film) can be easily set to desired thicknesses and hence, it is possible to manufacture a semiconductor device with small irregularities in ESD breakdown resistance.
[0067]
According to the method of manufacturing a semiconductor device of the embodiment 1, in the second insulation film forming step, the second insulation film 126b is formed such that a thickness of the second insulation film 126b is larger than a thickness of the gate insulation fil m 118. Accordingly, a gate-source withstand voltage can be increased compared to the conventional semiconductor device 900.
[0068]
According to the method of manufacturing a semiconductor device of t he embodiment 1, in the second insulation film forming step, assuming a thickness of the second insulation film 126b between a bottom of the gap 122 and a bottom of the first trench 116 as Dl, a thickness of the first insulation film 126a between a side wall of the gap 122 at a depth position of the bottom of the gap 122 and a side wall of the first trench 116 as d, and a thickness of the second insulation film 126b between the side wall of the gap 122 at the depth position of the bottom of the gap 122 and the side wall of the first trench 116 as D2, the second insulation film 126b is formed such that a relationship of Dl<d+D2 is satisfied (see Fig. 1).
By adopting such a method, it is possible to acquire the following advantageous effects. (1) The shield electrode 124 can be formed such that the shield electrode 124 reaches a deep depth position and hence, a depletion layer can reach a deep position when a reverse bias is applied. As a result, a source-drain withstand voltage can be increased. (2) A distance from a corner portion of the first trench 116 where the concentration of an electric field is liable to occur to the gate electrode 120 can be increased and, further, an electric field can be alleviated by the first insulation film 126a and the second insulation film 126b. As a result, a withstand voltage can be increased also from this point of view.
[0069]
According to the method of manufacturing a semiconductor device of the embodiment 1, in the second trench forming step, the second trench 140 is formed such that the second trench 140 reaches a depth position of the first trench 116. The depth position of the first trench 116 is disposed at a boundary surface between the first insulation film 126a and the second semiconductor layer 114, and a material for forming the first insulation film 126a (material: oxide film) and a material for forming the second semiconductor layer 114 (material: silicon) differ from each other. By adopting the above-mentioned configuration, etching performed in the second trench forming step can be stopped at the depth position of the first trench 116 with high accuracy and hence, the second trench 140 having the uniform depth with high accuracy can be formed.
[0070]
In the method of manufacturing a semiconductor device of the embodiment 1, in the source electrode forming step, the source electrode 136 is formed such that the source electrode 136 is directly connected to the shield electrode 124, the source region 130 and the contact region 132. Accordingly, a contact area between the source electrode 136, the source region 130 and the contact region 132 can be increased and hence, contact resistance can be decreased.
[0071]
In the method of manufacturing a semiconductor device of the embodiment 1, in the first insulation film forming step, the first insulation film 126a is formed by a CVD method. Accordingly, the first insulation film 126a can be formed at a relatively low temperature compared to the case where a thermal oxidation method is adopted and hence, damage to the semiconductor base body 110 caused by heating can be reduced.
[0072]
According to the method of manufacturing a semiconductor device of the embodiment 1, in the second insulation film forming step, the second insulation film 126b is formed by a thermal oxidation method and hence, an insulation film can be formed also in the relatively narrow gap 122.
[0073] [Embodiment 2] A semiconductor device 101 of the embodiment 2 basically has substantially the same configuration as the semiconductor device 100 of the embodiment 1. However, the semiconductor device 101 of the embodiment 2 differs from the semiconductor device 100 of the embodiment 1 with respect to a point that a source electrode is connected to a source region through a metal plug. That is, in the semiconductor device 101 of the embodiment 2, as shown in Fig. 6, a second insulation film 126b is formed also between a source electrode 136 and a source region 130, a predetermined opening 142 is formed in the second insulation film 126b, and a metal plug 144 is formed by filling the inside of the opening 142 with metal.
[0074]
The semiconductor device 101 of the embodiment 2 can be manufactured by a method of manufacturing a semiconductor device of the embodiment 2 described hereinafter.
[0075]
Tire method of manufacturing a semiconductor device of the embodiment 2 basically has substantially the same steps as the method of manufacturing a semiconductor device of the embodiment 1. However, the method of manufacturing a semiconductor device of the embodiment 2 differs from the method of manufacturing a semiconductor device of the embodiment 1 with respect to a point that the method of the embodiment 2 includes a metal plug forming step. That is, the method of manufacturing a semiconductor device of the embodiment 2, as shown in Fig. 7, further includes: an opening forming step where a predetermined opening 142 is formed in the second insulation film 126b such that the opening 142 reaches the base region 128 (see Fig. 7(a)); and a metal plug forming step where a metal plug 144 is formed by filling the inside of the opening 142 with metal (see Fig. 7(b)) between a shield electrode forming step (see Fig. 5(b)) and a source electrode forming step (see Fig. 5(d)).
[0076]
In the source electrode forming step, the source electrode 136 is formed such that the source electrode 136 is directly connected to the shield electrode 124 and is connected to the source region 130 and the base region 128 through the metal plug 144 (see Fig. 7(c)).
[0077]
Openings 142 and metal plugs 144 are formed in a stripe shape, and a stripe width is set to 0.5 pm, for example. A barrier metal (not shown in the drawing) is formed on an inner surface of the opening 142, and the metal plug 144 is formed such that the inside of the opening 142 is filled with predetermined metal by way of the barrier metal. Predetermined metal is tungsten, for example.
[0078]
In this manner, the method of manufacturing a semiconductor device of the embodiment 2 differs from the method of manufacturing a semiconductor device of the embodiment 1 with respect to a point that the method of the embodiment 2 includes a metal plug forming step. However, in the same manner as the method of manufacturing a semiconductor device of the embodiment 1. the method of manufacturing a semiconductor device of the embodiment 2 includes the shield electrode forming step as a step which comes after the gate electrode forming step and hence, the insulation films are not formed above the shield electrode 124 by a step which comes before the source electrode forming step. Accordingly, an insulation film removing step of removing the insulation films becomes unnecessary and hence, a step of establishing the connection between the shield electrode 124 and the source electrode 136 can be simplified.
[0079]
In the method of manufacturing a semiconductor device of the embodiment 2, the method further includes: the opening forming step of forming a predetermined opening in the second insulation film 126b; and a metal plug forming step of forming the metal plug 144 by filling the inside of the opening 142 with metal between the shield electrode forming step and the source electrode forming step, wherein in the source electrode forming step, the source electrode 136 is formed such that the source electrode 136 is directly connected to the shield electrode 124 and is connected to the source region 130 and the base region 128 through the metal plug 144. Accordingly, unlike the case of a method of manufacturing a semiconductor device where a source electrode and a source region are brought into direct contact with each other, it is unnecessary to form a large opening by removing a large amount of protective insulation film and hence, it is possible to manufacture a downsized semiconductor device. As a result, the method of manufacturing a semiconductor device of the embodiment 2 can manufacture a semiconductor device which satisfies the reduction of cost of electronic equipment and downsizing of electronic equipment.
[0080]
The method of manufacturing a semiconductor device of the embodiment 2 includes substantially the same steps as the method of manufacturing a semiconductor device of the embodiment 1 with respect to points other than the points including the metal plug forming step and hence, the method of manufacturing a semiconductor device of the embodiment 2 acquires advantageous effects which correspond to advantageous effects out of advantageous effects which the method of manufacturing a semiconductor device of the embodiment 1 can acquire.
[0081] [Embodiment 3] A semiconductor device 102 of the embodiment 3 basically has substantially the same configuration as the semiconductor device 100 of the embodiment 1. However, the semiconductor device 102 of the embodiment 3 differs from the semiconductor device 100 of the embodiment 1 with respect to a shape of the trench. That is, in the trench 116 of the semiconductor device 102 of the embodiment 3, as shown in Fig. 8, a depth of the trench 116 in a region w here a shield electrode 124 is formed as viewed in a plan view is deeper than a depth of the trench 116 in a region where the shield electrode 124 is not formed as viewed in a plan view.
[0082]
The semiconductor device 102 of the embodiment 3 can be manufactured by a method of manufacturing a semiconductor device of the embodiment 3 described hereinafter.
[0083]
The method of manufacturing a semiconductor device of the embodiment 3 basically has substantially the same steps as the method of manufacturing a semiconductor device of the embodiment 1. However, the method of manufacturing a semiconductor device of the embodiment 3 differs from the method of manufacturing a semiconductor device of the embodiment 1 with respect to a depth of the second trench formed in the second trench forming step. That is, in the second trench forming step of the method of manufacturing a semiconductor device of the embodiment 3, as shown in Fig. 9(a), a second trench 140a is formed such that the second trench 140a reaches a depth position deeper than a depth position of the first trench 116.
[0084J
In a second insulation film forming step, a second insulation film 126b is formed also on a surface of the second trench 140a formed at the depth position deeper than the depth position of the first trench 116 (see Fig. 9(b)).
Then, a shield electrode layer forming step is performed (see Fig. 9(c)).
[0085]
In this manner, the method of manufacturing a semiconductor device of the embodiment 3 differs from the method of manufacturing a semiconductor device of the embodiment 1 w ith respect to the depth of the second trench formed in the second trench forming step. However, in the same manner as the method of manufacturing a semiconductor device of the embodiment 1, the method includes the shield electrode forming step as a step which comes after the gate electrode forming step and hence, the insulation films (for example, the gate insulation film and the protective insulation film) are not formed above the shield electrode 124 by a step which comes before the source electrode forming step. Accordingly, an insulation film removing step of removing the insulation films becomes unnecessary and hence, a step of establishing the connection between the shield electrode 124 and the source electrode 136 can be simplified.
[0086]
According to the method of manufacturing a semiconductor device of the embodiment 3, in the second trench forming step, the second trench 140a is formed such that the second trench 140a reaches a depth position deeper than a depth position of the first trench 116 and hence, the shield electrode 124 can be formed such that the shield electrode 124 reaches a deep depth position. Accordingly, in the manufactured semiconductor device, it is possible to make a depletion layer reach a deep position at the time of applying a reverse bias and hence, a source-drain withstand voltage can be increased.
[0087]
According to the method of manufacturing a semiconductor device of the embodiment 3, in the second trench forming step, the second trench 140a is formed such that the second trench 140a reaches a depth position deeper than a depth position of the first trench 116. Accordingly, it is unnecessary to control etching to stop the etching at the depth position of the first trench 116 with high accuracy whereby a semiconductor device can be manufactured relatively easily.
[0088]
According to the semiconductor device 102 of the embodiment 3, a depth of the trench 116 in a region where a shield electrode 124 is formed as viewed in a plan view is deeper than a depth of the trench 116 in a region where the shield electrode 124 is not formed as viewed in a plan view and hence, the shield electrode 124 can be formed such that the shield electrode 124 reaches a deep depth position. Accordingly, it is possible to make a depletion layer reach a deep position at the time of applying a reverse bias and hence, a source-drain withstand voltage can be increased.
[0089]
The method of manufacturing a semiconductor device of the embodiment 3 includes substantially the same steps as the method of manufacturing a semiconductor device of the embodiment 1 with respect to points other than a depth of the second trench formed in the second trench forming step and hence, the method of manufacturing a semiconductor device of the embodiment 3 acquires advantageous effects which correspond to advantageous effects out of advantageous effects which the method of manufacturing a semiconductor device of the embodiment 1 can acquire.
[0090] [Embodiment 4] A semiconductor device 103 of the embodiment 4 basically has substantially the same configuration as the semiconductor device 100 of the embodiment 1. However, the semiconductor device 103 of the embodiment 4 differs from the semiconductor device 100 of the embodiment 1 with respect to a point that the semiconductor device 103 further includes a p-type diffusion region. That is, in the semiconductor device 103 of the embodiment 4, as shown in Fig. 10, a p-type diffusion region 148 (second conductive-type diffusion region) is formed such that the p-type diffusion region 148 is brought into contact with a bottom of the trench 116. Dopant concentration of the p-type diffusion region 148 is set higher than dopant concentration of the base region 128.
[0091]
The semiconductor device 103 of the embodiment 4 can be manufactured by a method of manufacturing a semiconductor device of the embodiment 4 described hereinafter.
[0092]
The method of manufacturing a semiconductor device of the embodiment 4 basically has substantially the same steps as the method of manufacturing a semiconductor device of the embodiment 1. However, the method of manufacturing a semiconductor device of the embodiment 4 differs from the method of manufacturing a semiconductor device of the embodiment 1 with respect to a point that the method of manufacturing a semiconductor device of the embodiment 4 includes a p-type diffusion region forming step. That is, the method of manufacturing a semiconductor device of the embodiment 4, as shown in Fig. 11(a) and Fig. 11(b), further includes the p-type diffusion region forming step (second conductive-type diffusion region forming step) of forming the p-type diffusion region 148 where the p-type diffusion region 148 is formed such that the p-type diffusion region 148 is brought into contact with a bottom of the second trench 140 between a second trench forming step (see Fig. 4(c)) and a second insulation film forming step (see Fig. 4(d)).
[0093]
To be more specific, after performing the second trench forming step (see Fig. 4(c)), the p-type diffusion region 148 is formed by injecting a p-type dopant into the bottom of the second trench 140 (see Fig. 11 (a)) and by activating the p-type dopant. Then, the second insulation film forming step (see Fig. 1 'l(b)) and a shield electrode forming step (see Fig. 11(c)) are performed.
[0094]
In this manner, the method of manufacturing a semiconductor device of the embodiment 4 differs from the method of manufacturing a semiconductor device of the embodiment 1 with respect to the point that the method of the embodiment 4 includes the p-type diffusion region forming step. However, in the same manner as the method of manufacturing a semiconductor device of the embodiment 1, the method of the embodiment 4 includes the shield electrode forming step as a step which comes after the gate electrode forming step and hence, the insulation films (for example, the gate insulation film and the protective insulation film) are not formed above the shield electrode 124 by a step which comes before the source electrode forming step. Accordingly, an insulation film removing step of removing the insulation films becomes unnecessary and hence, a step of establishing the connection between the shield electrode 124 and the source electrode 136 can be simplified.
[0095]
The method of manufacturing a semiconductor device of the embodiment 4 includes the p-type diffusion region forming step of forming the p-type diffusion region 148 where the p-type diffusion region 148 is formed such that the p-type diffusion region 148 is brought into contact with a bottom of the second trench 140 between the second trench forming step and the second insulation film forming step. Accordingly, it is possible to make a depletion layer reach a deep position at the time of applying a reverse bias. As a result, a source-drain withstand voltage can be increased.
[0096]
The method of manufacturing a semiconductor device of the embodiment 4 includes substantially the same steps as the method of manufacturing a semiconductor device of the embodiment 1 with respect to points other than the point that the method of the embodiment 4 includes the p-type diffusion region forming step and hence, the method of manufacturing a semiconductor device of the embodiment 4 acquires advantageous effects which correspond to advantageous effects out of advantageous effects which the method of manufacturing a semiconductor device of the embodiment 1 can acquire.
[0097] [Embodiment 5] A semiconductor device 104 of the embodiment 5 basically has substantially the same configuration as the semiconductor device 100 of the embodiment 1. However, the semiconductor device 104 of the embodiment 5 differs from the semiconductor device 100 of the embodiment 1 with respect to a shape of a shield electrode. That is, in the semiconductor device 104 of the embodiment 5, as shown in Fig. 12, the shield electrode 124a has side surfaces which form a bottom narrowed tapered shape.
[0098]
The semiconductor device 104 of the embodiment 5 can be manufactured by a method of manufacturing a semiconductor device of the embodiment 5 described hereinafter.
[0099]
The method of manufacturing a semiconductor device of the embodiment 5 basically has substantially the same steps as the method of manufacturing a semiconductor device of the embodiment 1. However, the method of manufacturing a semiconductor device of the embodiment 5 differs from the method of manufacturing a semiconductor device of the embodiment 1 with respect to a shape of a second trench formed in a second trench forming step. That is, in the second trench forming step of the method of manufacturing a semiconductor device of the embodiment 5, as shown in Fig. 13(a), a trench having side surfaces which form a bottom narrowed tapered shape is formed as the second trench 140b.
In the second trench forming step, a trench having side surfaces which form a bottom narrowed tapered shape is formed by adjusting conditions of an etching gas (a kind, a temperature and the like of the etching gas).
[0100]
Then, in a second insulation film forming step, a gap 122a also has side surfaces which form a bottom narrowed tapered shape for forming a second insulation film 126b along a surface of the second trench 140b (to be more specific, the gap 122a having a triangular shape extending downward in a convex shape) (see Fig. 13(b)).
[0101]
Then, in the shield electrode forming step, a shield electrode 124a having side surfaces which form a bottom narrowed tapered shape can be formed by filling polysilicon into the above-mentioned gap 122a (see Fig. 13(c)).
[0102]
In this manner, the method of manufacturing a semiconductor device of the embodiment 5 differs from the method of manufacturing a semiconductor device of the embodiment 1 with respect to the shape of the second trench formed in the second trench forming step. However, in the same manner as the method of manufacturing a semiconductor device of the embodiment 1, the method of the embodiment 5 includes the shield electrode forming step as a step which comes after the gate electrode forming step and hence, the insulation films (for example, the gate insulation film and the protective insulation film) are not formed above the shield electrode 124 by a step which comes before the source electrode forming step. Accordingly, an insulation film removing step of removing the insulation films becomes unnecessary and hence, a step of establishing the connection between the shield electrode 124 and the source electrode 136 can be simplified.
[0103]
According to the method of manufacturing a semiconductor device of the embodiment 5, in the second trench forming step, the trench having side surfaces which form a bottom narrowed tapered shape is formed as the second trench 140b and hence, a voltage applied to an upper portion of the shield electrode 124a becomes higher than a voltage applied to a lower portion of the shield electrode 124a. Accordingly, at the time of turning off the semiconductor device, a change in potential of a drain electrode can be alleviated. As a result, at the time of turning off the semiconductor device, a surge voltage can be lowered.
[0104]
The method of manufacturing a semiconductor device of the embodiment 5 includes substantially the same steps as the method of manufacturing a semiconductor device of the embodiment 1 with respect to points other than the shape of the second trench formed in the second trench forming step and hence, the method of manufacturing a semiconductor device of the embodiment 5 acquires advantageous effects which correspond to advantageous effects out of advantageous effects which the method of manufacturing a semiconductor device of the embodiment 1 can acquire.
[0105] [Embodiment 6] A semiconductor device 105 of the embodiment 6 basically has substantially the same configuration as the semiconductor device 100 of the embodiment 1. However, the semiconductor device 105 of the embodiment 6 differs from the semiconductor device 100 of the embodiment 1 with respect to the configuration of a second semiconductor layer. That is, in the semiconductor device 105 of the embodiment 6, in the second semiconductor layer 114, as shown in Fig. 14, in a depth region between a depth position of a lowermost surface of the base region 128 of the second semiconductor layer 114 and a depth position shallower than a depth position of the bottom of the trench 116, an n-type high concentration dopant region 150 having higher concentration than other regions of the second semiconductor layer 114 is formed. The high concentration dopant region 150 is uniformly formed in the horizontal direction of the second semiconductor layer 114.
[0106]
In this manner, the semiconductor device 105 of the embodiment 6 differs from the semiconductor device 100 of the embodiment 1 with respect to the configuration of the second semiconductor layer. However, in the same manner as the semiconductor device 100 of the embodiment 1, a thickness of an insulation region 126 interposed between a gate electrode 120 and a shield electrode 124 is larger than a thickness of a gate insulation film 118 and hence, a withstand voltage between the gate electrode 120 and the shield electrode 124 can be set high compared to the conventional semiconductor device 900.
[0107]
In the semiconductor device 105 of the embodiment 6, in a depth region between a depth position of a lowermost surface of the base region 128 of the second semiconductor layer 114 and a depth position shallower than a depth position of the bottom of the trench 116, an n-type high concentration dopant region 150 having higher concentration than other regions of the second semiconductor layer 114 is formed. Accordingly, an ON resistance of the semiconductor device 105 can be lowered.
[0108]
The method of manufacturing a semiconductor device of the embodiment 6 includes substantially the same steps as the method of manufacturing a semiconductor device of the embodiment 1 with respect to points other than the configuration of the second semiconductor layer and hence, the method of manufacturing a semiconductor device of the embodiment 6 acquires advantageous effects which correspond to advantageous effects out of advantageous effects which the method of manufacturing a semiconductor device of the embodiment 1 can acquire.
[0109]
Although the present invention has been described based on the above-mentioned embodiments heretofore, the present invention is not limited to the above-mentioned embodiments. The present invention can be carried out in various modes without departing from the gist of the present invention. For example, the following modifications of the present invention are conceivable.
[0110] (1) The number, materials, shapes, positions, sizes and the like of the constitutional elements described in the above-mentioned embodiments are merely examples, and can be changed within a range where the advantageous effects of the present invention are not impaired.
[0111] (2) In the above-mentioned respective embodiments, the first insulation film is formed by a CVD method. However, the present invention is not limited to such a method. The first insulation film may be formed by a thermal oxidation method.
[0112] (3) In the above-mentioned respective embodiments, the second insulation film is formed by a thermal oxidation method. However, the present invention is not limited to such a method. The second insulation film may be formed by a CVD method.
[0113] (4) In the second trench forming step in the above-mentioned embodiments 1, 2,4 and 5, the second trench is formed such that the second trench reaches a depth position of the first trench, and in the second trench forming step in the embodiment 3, the second trench is formed such that the second trench reaches a depth position deeper than a depth position of the first trench. However, the present invention is not limited to such second trench forming steps. In the second trench forming step, the second trench may be formed such that the second trench reaches a depth position shallower than a depth position of the first trench.
[0114] (5) In the above-mentioned second insulation film forming steps of the respective embodiments, the second insulation film is formed such that the relationship of Dl<d+D2 is satisfied. However, the present invention is not limited to such a relationship. In the second insulation film forming step, the second insulation film may be formed such that a relationship of Dl=d+D2 is satisfied. In this case, in the second trench forming step, the second trench is formed such that the second trench reaches a depth position shallower than a depth position of the first trench.
[0115] (6) In the above-mentioned respective embodiments, an n-type dopant is injected after a p-type dopant is injected. However, the present invention is not limited to such a dopant injection method. A p-type dopant may be injected after an n-type dopant is injected.
[0116] (7) In the above-mentioned respective embodiments, dopants tire collectively activated after a p-type dopant and an n-type dopant are injected. However, the present invention is not limited to such a dopant injection method. Dopant activation may be performed every time after each dopant is injected.
[0117] (8) In the above-mentioned respective embodiments, the base region 128, the source region 130 and the contact region 132 are formed before the shield electrode is formed. However, the present invention is not limited to such an order of forming these regions. The base region 128, the source region 130 and the contact region 132 may be formed after the shield electrode is formed.
[0118] (9) In the above-mentioned respective embodiments, the trench (first trench), the gate electrode and the shield electrode are respectively formed into a stripe shape as viewed in a plan view. However, the present invention is not limited to such a configuration. The trench (first trench), the gate electrode and the shield electrode may be respectively formed in a grid shape or a dot shape (a columnar shape as viewed stereoscopically) as viewed in a plan view.
[0119] (10) In the above-mentioned respective embodiments, polysilicon is used as a material for forming the shield electrode. However, the present invention is not limited to such a material. Metal may be used as a material for forming the shield electrode.
[0120] (11) In the above-mentioned respective embodiments, the description has been made by taking a MOSFET as an example of the semiconductor device. However, the present invention is not limited to such a case. The present invention is applicable to various other devices besides a MOSFET without departing from the gist of the present invention.
Reference Signs List [0121] 100, 101, 102, 103, 104, 105, 900: semiconductor device 110, 910: semiconductor base body 112, 912: first semiconductor layer 114, 914: second semiconductor layer 116, 116a, 916: first trench (trench) 118,918: gate insulation film 126a’: silicon oxide film 120, 920: gate electrode 120’, 124’: polysilicon layer 122, 122a: gap 124, 124a, 924: shield electrode 126: insulation region 126a, 926: first insulation film 126b: second insulation film 128, 928: base region 130, 930: source region 132, 932: contact region 134, 134a, 934: protective insulation film 136, 936: source electrode 138, 938: drain electrode 140, 140a: second trench 142: opening 144: metal plug 148: p-type diffusion region 150: high concentration dopant region 922: first gap 950: recessed portion 952: second gap

权利要求:
Claims (17)
[1]
A method of manufacturing a semiconductor device with a shield gate structure of a separation type in a direction in the plane, wherein a gate electrode and a shield electrode are separated from each other in a direction in the plane, the method comprising in the following order: a semiconductor base body preparation step of preparing semiconductor base body with a first conductivity type first semiconductor layer and a first conductivity type second semiconductor layer, which has a lower concentration than the first semiconductor layer; a first slot forming step of forming a predetermined first slot on the second semiconductor layer; a first insulating film-forming step of forming a first insulating film such that the first insulating film is filled into a part of the first slot; a gate insulating film forming step of forming a gate insulating film on a side wall of an upper portion of the first slot; a gate electrode forming step of forming the gate electrode made of polysilicon, the gate insulating film being disposed between the upper portion of the first slot and the gate electrode; a second slot forming step of forming a second slot in the interior of the first slot by etching a central portion of the first insulating film; a second insulating film-forming step of forming a second insulating film at least in the interior of the second slot under a condition that a space resides in the interior of the second slot; a shield electrode forming step of forming the shield electrode in the interior of the space; and a source electrode forming step of forming a source electrode, such that the source electrode is electrically connected to the shield electrode.
[2]
The method for manufacturing a semiconductor device according to claim 1, wherein in the second insulating film forming step, the second insulating film is formed such that a thickness of the second insulating film is greater than a thickness of the gate insulating film.
[3]
3. A method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein in the second insulating film-forming step, assuming a thickness of the second insulating film between a bottom of the space and a bottom of the first slot D1 is a thickness of the first insulating film between a side wall of the space at a depth position of the bottom of the space and a side wall of the first slot d, and a thickness of the second insulating film between the side wall of the space at the depth position of the bottom of the space and the side wall of the first slot D2, the second insulating film is formed such that a ratio D1 <d + D2 is satisfied.
[4]
A method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein in the second slot forming step, the second slot is formed such that the second slot reaches a depth position of the first slot.
[5]
A method for manufacturing a semiconductor device according to any of claims 1-3, wherein in the second slot forming step, the second slot is formed such that the second slot reaches a depth position deeper than a depth position of the first slot.
[6]
The method for manufacturing a semiconductor device according to any of claims 1 to 5, further comprising a second conductivity type diffusion region forming step of forming a second conductivity type diffusion region, such that the second conductivity type diffusion region is brought into contact with the bottom of the second slot, between the second slot forming step and the second insulating film forming step.
[7]
A method for manufacturing a semiconductor device as claimed in any one of claims 1-6, wherein in the second slot forming step, a slot with side surfaces forming a tapered shape narrower to the bottom is formed as the second slot.
[8]
A method for manufacturing a semiconductor device according to any one of claims 1 to 7, further comprising: a base region forming step of forming a second conductivity type base region on a surface of the second semiconductor layer in an area where the first slot is not formed as seen in a plan view; and a first conductivity type high concentration diffusion region forming step of forming a first conductivity type high concentration diffusion region on a surface of the base region, such that at least a portion of the first conductivity type high concentration diffusion region is exposed to the side wall of the first slot, between the gate electrode forming step and the second slot forming step.
[9]
The method for manufacturing a semiconductor device according to claim 8, further comprising: a contact region forming step of forming a second conductivity type contact region in a predetermined region of a surface of the base region, between the gate electrode forming step and the second slot forming step ; and a second insulating film reset step in which the second insulating film in an area in which the first slot is not formed as seen in a plan view is removed by etching back between the shield electrode forming step and the source electrode forming step, wherein in the source electrode forming step, the source electrode is formed such that the source electrode is directly connected to the shield electrode, the first conductivity type, high concentration diffusion region, and the contact region.
[10]
The method for manufacturing a semiconductor device according to claim 8, further comprising: an aperture forming step of forming a predetermined aperture in the second insulating film; and a metal pin forming step of forming a metal pin by filling the interior of the aperture with metal, between the shield electrode forming step and the source electrode forming step, wherein in the source electrode forming step, the source electrode is formed such that the source electrode is directly connected to the shield electrode and is connected to the first conductivity type high concentration diffusion region and the base region by means of the metal pin.
[11]
A method for manufacturing a semiconductor device as claimed in any one of claims 1 to 10, wherein in the first insulating film forming step, the first insulating film is formed by a chemical vapor deposition (CVD) method.
[12]
A method for manufacturing a semiconductor device according to any of claims 1 to 10, wherein in the first insulating film-forming step, the first insulating film is formed by a thermal oxidation method.
[13]
A method for manufacturing a semiconductor device according to any one of claims 1-12, wherein in the second insulating film-forming step, the second insulating film is formed by a chemical vapor deposition (CVD) method.
[14]
A method for manufacturing a semiconductor device according to any of claims 1-12, wherein in the second insulating film-forming step, the second insulating film is formed by a thermal oxidation method.
[15]
15. A semiconductor device comprising a shield gate structure of a separation type in a direction in the plane, wherein a gate electrode and a shield electrode are separated from each other in a direction in the plane, the semiconductor device comprising: a semiconductor base body with a first conductivity type first semiconductor layer and a first conductivity type second semiconductor layer, which heals a lower concentration than the first semiconductor layer; a predetermined slot positioned on a surface of the second semiconductor layer and formed at a depth where the slot does not reach the first semiconductor layer; the gate electrode made of polysilicon and formed on a side wall of an upper portion of the slot with a gate insulating film disposed between the gate electrode and the side wall; the shield electrode formed on a central part of the slot in a state in which the shield electrode is spaced from the gate electrode; an isolation region adapted to extend between the gate electrode and the shield electrode in the interior of the slot to cause the shield electrode to be spaced from the gate electrode, and adapted to extend along side walls and a bottom of the slot for spacing the shield electrode from the side walls and bottom of the slot; a source electrode adapted to be electrically connected to the shield electrode, a thickness of the insulating region disposed between the gate electrode and the shield electrode is set larger than a thickness of the gate insulating film.
[16]
The semiconductor device according to claim 15, wherein assuming that a thickness of the insulating area is between a bottom of the shield electrode and the bottom of the slot D1, and a thickness of the insulating area between a side wall of the shield electrode at a depth position of the bottom of the is the shield electrode and a side wall of the slot d + D2, a ratio of D1 <d + D2 is satisfied.
[17]
A semiconductor device according to claim 15 or 16, wherein a second conductivity type base region is formed on the surface of the second semiconductor layer in an area in which the slot is not formed as seen in a plan view, and a first conductivity type high doping concentration region with a higher concentration than others regions of the second semiconductor layer is formed in a depth region ranging from a depth position of a lower surface of the base region to a depth position that is shallower than a depth position of the bottom of the slot in the second semiconductor layer.

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法律状态:

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