• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A device for noncontact determination of the edge profile at a thin disk-shaped object helps determining the edge profile at semiconductor wafers in which exact image recording is not impaired by specular reflections of the edge profile. A plurality of light sources in the form of laser radiation sources each emitting a line-shaped light bundle are arranged so as to be coplanar in a common plane representing a measurement plane oriented orthogonal to a base plane of the object and are directed from different directions to a common intersection of the laser radiation sources in the edge region of the object. A light sheet is formed in the measurement plane and at least one base camera is directed in the base plane lateral to the measurement plane to capture scattered light proceeding from a light line generated by the light sheet when impinging the object edge region.
    公开号:NL2010298A
    申请号:NL2010298
    申请日:2013-02-14
    公开日:2013-08-21
    发明作者:Axel Gaglin；Thomas Becker；Frank Richter；Bernd Gey
    申请人:Kocos Automation Gmbh；
    IPC主号:
    专利说明:

    DEVICE FOR NONCONTACT DETERMINATION OF EDGE PROFILE AT A THINDISK-SHAPED OBJECT
    The present invention is directed to a device fornoncontact determination of the edge profile of a thin disk¬shaped object comprising a turntable for rotating the disk¬shaped object around an axis of rotation and a measuringarrangement for radial positioning of at least one lightsource for illuminating an edge region of the disk-shapedobject in virtually radial direction to the axis of rotationthereof, and at least one camera for recording the illuminatededge region. The invention is particularly suitable forreliable and highly precise characterization of the edgeprofile of a wafer.
    In semiconductor fabrication, wafers are machinedsequentially in a multitude of process steps during thefabrication process. With increasingly higher integrationdensity of the semiconductor structures, the requirements forthe quality of the wafers also increase. In the fabrication ofwafers enormous expenditures on material and technology cansometimes result at the end of the value chain. It istherefore meaningful and legitimate to subject wafers toextensive testing before processing, i.e. , at the beginning ofthe value chain, so that the wafers can be selected based onthe highest reliability and fullest possible utilization ofmaterial surfaces. This testing also includes inspection ofthe outer circumferential edge of a wafer to check forsuitable shape and integrity of the circumferential edge. Anumber of checking devices able to perform these inspectionshas already been suggested.
    DE 10 2007 024 525 B4 describes a device in which threecameras are used to perform a visual assessment of defects inthe edge region of a wafer. For recording defects, one camerais positioned opposite the edge region above the wafer and onecamera is positioned opposite the edge region below the wafer.
    A third camera is disposed opposite the edge region of thewafer in radial direction. The edge region of the wafercaptured by the cameras is illuminated by a homogeneous,diffusely radiating illumination, and pictures are taken bythe camera and displayed to a user of the device on a monitorfor visual evaluation. Thus it is possible when capturing andusing the exact position of a defect on the wafer thatsubjective assessments of the defects can also be made. Anobjective, qualitative assessment of defects is not possiblein this device .
    In an edge checking device disclosed in DE 11 2008 000 723T5, test results are displayed depending on the edgeinformation acquired from the inspected wafer. For thispurpose, the circumferential surface of a wafer is capturedfrom three recording directions by at least one CCD linecamera. The axes of the three image recordings intersect inthe center plane of the wafer at a point close to thecircumferential surface of the wafer so that one viewingdirection is directed to the outer circumferential surface andthe other two image recordings are directed, respectively, tothe beveled circumferential edges of the wafer. Theconfiguration of the illumination needed for image capture wasnot disclosed. The captured images are displayed on a displaydevice for manual evaluation and the position-dependent edgeinformation is stored in a storage unit. Further, edgeinformation is stored in a storage unit depending on positionbased on changes in shading in the captured image content. Theacquired data are preferably displayed visually in the form ofa profile curve on the basis of which a statistical evaluationof the edge information is made possible so that a trend inthe overall shape can be determined therefrom. This has thedrawback that image defects caused, for example, by reflectedlight at trouble spots or by improperly angled edge regionswhen making photographic recordings of a small segment of theedge region of a wafer by means of CCD line cameras can lead to erroneous interpretations of the actual edge shape, cancorrupt measurement results or even render measurementimpossible.
    Therefore, it is the object of the invention to find anovel possibility for determining an edge profile at thindisk-shaped measurement objects (e.g., semiconductor wafers)which makes it possible during image recording of the edgeprofile to substantially suppress specular reflections whichimpede or degrade determination of the edge profile.
    In a device for determination of the edge profile at a thindisk-shaped object comprising a turntable for rotating thedisk-shaped object around an axis of rotation and a measuringarrangement for radial positioning of at least one lightsource for illuminating an edge region of the disk-shapedobject in virtually radial direction to the axis of rotationthereof, and at least one camera for recording the illuminatededge region, wherein the camera is arranged in a base planeextending parallely and medially between the plane faces ofthe disk-shaped object, the above-stated object is met in thatthere is provided a plurality of light sources in the form oflaser radiation sources with line-shaped beam profile whicheach emit a line-shaped light bundle, in that the line-shapedlight bundles of the laser radiation sources are arranged soas to be coplanar in a common plane representing a measurementplane oriented orthogonal to the base plane and are directedfrom different directions to a common intersection of thelaser radiation sources in the edge region of the object,wherein a light sheet composed of the line-shaped lightbundles of the laser radiation sources is formed in themeasurement plane, and in that the at least one camera, asbase camera, is directed in the base plane lateral to themeasurement plane so that it records scattered lightproceeding from a light line illuminated by the light sheet inthe edge region of the object.
    The laser radiation sources are advantageously arranged insuch a way that the line-shaped light bundles thereofilluminate the edge region of the disk-shaped object so as tosurround it in a U-shaped manner. In this respect, it isuseful to arrange three laser radiation sources in such a waythat a base laser radiation source is arranged in the baseplane and two further laser radiation sources are arranged(symmetric to the two sides of the base laser radiationsource) in the measurement plane at an irradiation angle ofequal size but different mathematical sign and are directed tothe common intersection.
    For alignment of the base camera, it is advantageous thatan observation angle between the base camera and the baselaser radiation source in the base plane is adjustable in therange between 300 and ^ 900.
    In addition to the base camera, it is advisable that twofurther cameras are directed lateral to the measurement planeand to the intersection of the optical axes of the laserradiation sources, preferably at the same pitch angleperpendicular to or under the base plane in each instance, toimprove the resolution of the image recording.
    Further, it proves advantageous to provide a notch camerain addition to the base camera, the optical axis of the notchcamera being arranged in the base plane at a latitude angle tothe base laser radiation source that is substantially smallerthan the observation angle of the base camera to the baselaser radiation source.
    To adjust the measuring arrangement to different diametersof disk-shaped objects and to compensate for eccentricity in arotating edge profile, a linear guide is advisably providedfor moving the measuring arrangement orthogonal to the axis ofrotation of the turntable.
    A centering camera oriented perpendicular to the base planeis advantageously provided for detecting an eccentric position of the edge region of the disk-shaped object relative to theaxis of rotation of the turntable and is arranged outside themeasurement plane defined by the laser radiation sources. Theradial position of the centering camera can be adjusted to adiameter of the object that is known beforehand, and thecentering camera is arranged opposite a diffuse illuminationunit. For this purpose, it is advisable that the angularposition of the centering camera to the measurement plane,which angular position is adjusted in the base plane, isprovided for calculating a tracking movement of the measuringarrangement which compensates for eccentricity.
    For vibration-decoupled measurement, a solid base plate isadvantageously used as a component carrier for a table systemwith the turntable, for a linear guide and a supporting systemfor the measuring arrangement and for additional elements ofthe device .
    The invention is based on the fundamental considerationthat because of interfering reflections a purely opticalgeneration and observation of images of the edge profile leadsto a flawed acquisition of at least some portions of the edgeprofile of wafers. The invention solves this problem byselecting a camera arrangement which records exclusivelyscattered light from the obj ect edges and in that thescattered light is captured lateral to an illumination planegenerated by line-shaped illumination. The illumination ispreferably carried out by means of line lasers which impingefrom different directions so as to generate a thin planarlight sheet (light curtain) into which the profile of theobj ect to be measured intrudes and is moved orthogonallythrough the latter. The line lasers generate a homogeneouslaser line on the measurement obj ect, which laser line isilluminated by line lasers impinging in a coplanar mannerorthogonally on the edge profile to be measured. As a resultof this light curtain impinging "on all sides", virtuallyevery point of the edge region of the measurement object is illuminated orthogonally and an intensive, narrowly spatiallydefined fringe of light is generated around the end profileduring lateral image recording by the camera arrangement sothat the edge profile is progressively imaged planewise due tothe orthogonal movement of the edge profile through the lightcurtain.
    The images which are successively recorded by the cameraarrangement and which have no superposition errors ordistortion in spite of a plurality of light sources allow amore precise measurement of edge (s) compared to previouslyknown solutions. This happens because when the edge profilepenetrates into the light sheet, a uniform intensive laserline is generated along the edge profile and a light fringethereof which is generated by scattered light is recorded bythe camera arrangement lateral to the light sheet and can beobj ectively evaluated by means of software. It should be notedthat the light fringe of the light sheet impinging on themeasurement object "on all sides" is also referred to hereininterchangeably as "light line" to simplify the description ofthe image recordings of the profile of the measurement object.
    The device makes it possible to determine the edge profileat thin disk-shaped measurement objects quickly and reliably,and a reflection-free, highly precise recording of the edgeprofile is achieved even when trouble spots or improperlyangled obj ect edges are found in the edge profile.
    The invention will be described more fully in the followingwith reference to embodiment examples. The drawings show:
    Fig. 1 a schematic construction of the device accordingto the invention;
    Fig. 2 one specific embodiment form of the deviceaccording to the invention in full elevation (right-hand side)and a fragmentary view of the back (left-hand side);
    Fig. 3 a schematic construction of the device according to the invention in a preferred embodiment with four camerasfor edge recording and with an additional unit for detecting eccentricity; and
    Fig. 4 a schematic illustration of the generation of thelight sheet in the region of a wafer edge profile.
    According to Fig. 1, the device has a measuring arrangement3 including a base laser radiation source 31, at least twofurther laser radiation sources 32 and at least one basecamera 35. The optical axis 34 of the base laser radiationsource 31 and the optical axis 36 of the base camera 35 arearranged substantially orthogonal to one another in apreferably horizontally oriented common base plane 41 and meetat an intersection 42. The further laser radiation sources 32are arranged with their optical axes 34 symmetric to bothsides of the base laser radiation source 31 in a measurementplane 43 at an irradiation angle 45 of the same size butdifferent sign relative to the base laser radiation source 31and are likewise directed into intersection 42. The laserradiation sources 31 and 32 are preferably line lasers ofidentical construction and have line-shaped beam profileswhose light bundles 33 collectively form a light sheet 4inside the measurement plane 43. The light sheet 4 has anorthogonal orientation to the base plane 41.
    In order that a profile to be measured at a measurementobject, which in this case - without limiting generality - isthe edge profile 21 of a wafer 2, can be aligned with thecomponents (laser radiation sources 31 and 32 and at least thebase camera 35) of the measurement arrangement 3 which areexactly aligned with one another, a table system 1 is arrangedat a defined distance from the measuring arrangement 3. Thewafer is movably supported by the table system 1 and can bemoved through the light sheet 4 along the edge profile 21 tobe measured.
    The table system 1 according to Fig. 2 is outfitted with aturntable 11 for the wafer 2 which is provided in this exampleas measurement object. The turntable 11 has a horizontalsupport surface supporting the wafer 2. The axis of rotation12 of the turntable 11 is oriented orthogonal to the baseplane 41.
    According to Fig. 2, a linear guide 51 is provided on abase plate 5 for receiving the measuring arrangement 3. Thelinear guide 51 is oriented in such a way that the measuringarrangement 3 is arranged with its intersection 42 of theoptical axes 34 and 36 of laser radiation sources 31, 32 andof base camera 35, respectively, displaceably in an orthogonaldirection relative to the axis of rotation 12 of the turntable11 in the base plane 41. The optical axis 34 of the base laserradiation source 31 is arranged parallel to the movementdirection of the linear guide 51 so that the line-shaped lightbundle 33 of the base laser radiation source 31 is orientedsubstantially in a radial plane to the axis of rotation 12 ofthe turntable 11.
    To achieve the highest possible accuracy with the device, asolid granite block with a moment of inertia corresponding tothe maximum acceleration forces of the turntable 11, linearguide 51 and table system 1 is used as base plate 5. The baseplate 5 is supported so as to be decoupled from vibrationsrelative to the substrate at the installation site.
    As is shown in Fig. 2, the wafer 2 with an edge profile 21to be inspected is placed so as to be as centered as possiblewith one of its plane faces on the support surface of theturntable 11. The support surface has a smaller diameter thanthe wafer 2 to be measured so that the entire edge region 22of the wafer 2 freely projects beyond the edge of theturntable 11. The support surface of the turntable 11 can beadapted to commercial wafer sizes in a corresponding mannerfor optimal accommodation of various wafer sizes.
    The wafer 2 can be set in rotation with the turntable 11.Inaccuracies in the positioning of the wafer 2 resulting in aneccentricity between the wafer axis and the axis of rotation 12 of the turntable 11 are captured by a centering camera 13.For this purpose, as is shown in Fig. 3, the centering camera 13 is positioned above the support surface of the turntable 11over the wafer edge region 21. A telecentrically radiatingillumination unit 14 which is arranged below the supportsurface of the turntable 11 radiates a diffuse light indirection of the centering camera 13. With the wafer edgeregion 22 arranged therebetween, a silhouette of the outeredge 23 of the wafer 2 is generated opposite the centeringcamera 13. Based on the silhouette, the cyclical movements ofthe outer edge 23 of the wafer occurring during the rotationof an eccentrically positioned wafer 2 can be captured by thecentering camera 13 depending on the angle of rotation andstored. The values acquired in this way are used to controlthe linear guide 51 in the process of determining the edgeprofile so as to compensate for the eccentric position of thewafer 2 relative to the intersection 42 of the optical axes 34and 36 of the measuring arrangement 3 so it is not necessaryto correct the eccentric position of the wafer 2 on theturntable 11. To correlate the rotational angle-dependentpositional variations of the outer edge 23 of the wafer 2relative to the intersection 42 of the measuring arrangement 3, it is merely necessary to know the angle formed by the axisof rotation 12 between the intersection 42 and optical axis 36of the centering camera 13.
    A holder 15 shown in Fig. 2 is provided for fastening thecentering camera 13 which is situated on the optical axis 34of the illumination unit 14. Adjustment of the position of thecentering camera 13 to the different diameters of commercialwafer sizes is ensured in that the holder 15 is displaceablerelative to the turntable 11 in a radial direction relative tothe axis of rotation 12.
    After acquiring the eccentricity of the wafer 2 and,therefore, the rotation angle-dependent position of the edgeprofile 21, the measuring arrangement 3 can be moved by meansof the linear guide 51 in direction of the turntable 11 out ofan idle position at the greatest distance from the turntable11 into a ready position which is determined based on wafersize. In accordance with the previously measured eccentricityof the supported wafer 2, a rotation angle-dependent signedoffset is applied to this ready position. By summing the readyposition and offset, the measuring arrangement 3 reaches aninspection position in which the intersection 42 of theoptical axes 34 and 36 of the measuring arrangement 3 isalways held in a constant position relative to the outer edge23 of the wafer 2.
    As is shown in Fig. 4, the light sheet 4 is formed asmeasurement plane 43 in orthogonal orientation to the baseplane 41 owing to the line-shaped beam profile of the lightbundles 33 proceeding from the laser radiation sources 31 and32. The irradiation angle 45 of the further laser radiationsources 32 can have a value ranging between 10° and 90° to thebase laser radiation source 31 depending upon requirements.Therefore, the light bundles 33 of the further laser radiationsources 32 always impinge on the edge region 22 of the wafer 2from a position arranged below and above the plane faces ofthe wafer 2 so that a light line 44 enclosing the edge profile21 in a U-shaped manner is illuminated on the edge region 32of the wafer 2 when the wafer 2 penetrates the light sheet 4.If the irradiation angle 45 of the laser radiation sources 32is in the range of 450 or less, the base laser radiationsource 31 can be dispensed with.
    The scattered light proceeding from the light line 44 canbe captured in the form of a light fringe by the base camera35 which is arranged in the base plane 41 and which operatestelecentrically. This light fringe "seen" by the base camera 35 is shown in Fig. 4 in an enlarged section (upper right) asa stylized image recording 49 of the base camera 35.
    By capturing the scattered light emanating from the lightline 44 at the edge profile 21 and through a procedure whichis already known from light section methods as they arecalled, the surfaces of the edge region 22 of the wafer 2 andespecially the outer edge 23 of the wafer 2 can be inspectedand any anomaly, e.g., divergent shape or mechanical damage,can be recorded. In order to capture the edge profile 21 withhigh spatial resolution, the light sheet 4 has a thickness,and therefore the light line 44 has a width, between 1 pm anda maximum of 25 pm.
    To capture the scattered light of the light line 44, thebase camera 35 with a high-resolution objective is secured inthe measuring arrangement 3. Its optical axis 36 is arrangedin the base plane 41 at an observation angle 46 to the opticalaxis 34 of the base laser radiation source 31. The workingdistance of the base camera 35 is selected in such a way thatthe light sheet 4 is located exactly in the depth of focusrange of the objective of the base camera 35. Since as ageneral rule there are no further elements in the edge region22 of the wafer 2 which mask the scattered light in the baseplane 41, the observation angle 46 between the base camera 35and the base laser radiation source 31 can be selectivelyadj usted within a very wide range between 300 and d 90 0 .
    In order to achieve a more compact construction of themeasuring arrangement 3, the base camera 35 can also bearranged perpendicularly as is shown in Fig. 2; for thispurpose, a deflecting prism 39 is arranged in front of theobjective of the base camera 35. In this case, to capture thescattered light of the light line 44 the deflecting prism 39is arranged exclusively in the base plane 41 in order todirect the angled optical axis 36 of the base camera 35 in theintersection 42 tangential to the outer edge 23 of the wafer2 .
    The edge profile 21 of the wafer 2 rotating by means of theturntable 11 continuously passes through the light sheet 4.
    The reflections of the light line 44 projected on the edgeprofile 21 are acquired by the base camera 35 only in the formof a scattered light distribution. The corresponding rotationangle of the wafer 2 is captured at the same time based on theposition of the turntable 11. In this way, the capturedscattered light distribution can also be associated with anunambiguous position on the edge region 22 of the wafer 2, thelocal edge profile 21 can be acquired by assessing thecharacteristic features of the scattered light distribution,and every trouble spot on the edge profile 21 of the wafer 2can be recorded and stored.
    If the scattered light of the light line 44 is observed ata defect-free wafer edge region 22, the greatest intensity ofscattered light that is recorded corresponds to a perspectiveedge profile 21 within the radial plane of the wafer 2 throughthe intersection 42 defining the measurement plane 43. Everyprofile deviation or damage to the edge region 22 of the wafer2 changes the extent, structure and intensity of the scatteredlight and therefore provides information about characteristicsurface changes deviating from an expected standard shape.
    By means of the known observation angle 46 between the basecamera 35 and base laser radiation source 31 and the knownrotation angle of the wafer 2 on the turntable 11, theposition and magnitude of changes to the requisite edgeprofile 21 can be detected in a very precise manner. Theposition data which are determined in this way are convertedinto a digital blank profile and used to determine the edgeprofile 21 by applying appropriate algorithms. The data of theedge profile 21 can be evaluated within the framework ofquality assurance or sent to appropriate machines for carryingout subsequent edge machining.
    With highly reflective surfaces such as are found inpolished metals or semiconductor substrates, reflections may occur during the inspection of an edge profile 21 whichinterfere with a reliable detection of the scattered light byan individual base camera 35. In order to achieve a reliabledetection of the edge profile 21 of a wafer 2 in the edgeregion 22 thereof also under reflective surface conditions ofthis kind, further cameras 37 can be used in addition to thebase camera 35.
    For this purpose, as is shown in Fig. 3, two additionalcameras 37 are arranged above and below the base plane 41 in atangential plane extending through the optical axis 36 of thebase camera 35 and oriented orthogonal to the base plane 41and are directed to the intersection 42. The two additionalcameras 37 have the same pitch angle 47 and, therefore, asymmetrical arrangement with respect to the base plane 41. Thepitch angle 45 is preferably 45° but can also be adjusted inthe range between 100 and 90 ° in principle.
    To identify the crystal orientation in silicon wafers, theedge region 22 of the wafer 2 is usually provided with atleast one notch 24. As a result of the standardized notch 24,when traversing the light sheet 4 neither the base camera 35nor the additional cameras 37 can capture portions of thelight line 44 at the deeper points of the notch 24 becausethey are partially concealed by the regular edge profile 21 ofthe edge region 22 of the wafer 2. It is useful to employ anadditional notch camera 38 so that the edge profile 21 of theouter edge 23 of the wafer 2 can also be fully captured inthis area as well.
    To this end, the notch camera 38 is arranged with itsoptical axis 36 in the base plane 41 and in a latitude angle48 of preferably 45 ° to the optical axis 34 of the base laserradiation source 31. The latitude angle 48 can also beadjusted so as to diverge from 45° provided the notch camera38 can still capture the scattered light of the light line 44uninterruptedly in the entire region of the notch 24. Theprecisely acquired position of the notch 24 can also be used in combination with the angle of rotation of the turntable 11as a reference point for associating the angle of rotationwith the successively acquired image recordings of the lightline 44 of the edge profile 21 of the wafer 2.
    The objectives of the base camera 35, of all of theadditional cameras 37 and of the notch camera 38 areconfigured confocally, i.e., the focal points thereof lieexactly in the light sheet 4 at the intersection 42 of theoptical axes 34 and 36 of the base laser radiation source 31and base camera 35 and accordingly correspond to the desiredpoint of incidence of the base laser radiation source 31 onthe outer edge 23 of the wafer 2. As is shown in Fig. 2, thealignment of the cameras 35, 37 and 38 and of the laserradiation sources 31 and 32 is carried out by means ofprecisely adjustable fastening elements 52 which are arrangedat a supporting system 53 for the measuring arrangement 3,this supporting system 53 being moved by means of the linearguide 51, and the cameras 35, 37 and 38 and laser radiationsources 31 and 32 of the measuring arrangement 3 can beadjusted and fixed in a defined manner relative to one anotherby means of these fastening elements 52. As a result of thisarrangement and the known angles between the light sheet 4,base plane 41 and camera positions for defining themeasurement plane 43, the recordings of the scattered light ofthe light line 44 made by the individual cameras 35, 37 and 38along the edge profile 21 of the wafer 2 are superposedwithout distortion, and a very precise edge profile 21 of theedge region 22 of the wafer 2 can be calculated therefrom.
    This makes possible a reliable and precise characterization ofthe edge profile 21 of a wafer 2.
    List of Reference Numerals table system turntable axis of rotation centering camera illumination unit holder wafer edge profilewafer edge regionouter edge of the wafernotch measuring arrangementbase laser radiation source additional laser radiation sourcelight bundle optical axis (of the light source)base camera optical axis (of the base camera)additional cameranotch cameradeflecting prism light sheetbase planeintersectionmeasurement planelight lineirradiation angleobservation anglepitch anglelatitude angle image recording (of the base camera) base platelinear guidefastening element supporting system (of the measuring arrangement)
    权利要求:
    Claims (10)
    [1]
    What is claimed is: 1. An apparatus for contactlessly determining an edge profile of a thin disc-shaped object, comprising a turntable for rotating the disc-shaped object about an axis of rotation and a measuring device for radially positioning at least one light source for illuminating an edge region of the disc-shaped object. substantially radially direction to its axis of rotation, and at least one camera for recording the illuminated edge region, the camera being positioned in a base plane extending parallel and midway between the planar surfaces of the disc-shaped object, characterized in that there is a number of light sources in the form of laser beam sources (31, 32) with a linear beam profile, each of which emits a line-shaped light beam (33), and that the line-shaped light beams (33) of the laser beam sources (31, 32) are coplanar arranged in a common plane, that forms a measurement surface (43) orthogonal to the base surface (4) 1) is oriented, wherein the light beams from different directions are directed at a common intersection (42) of the laser beam sources (31, 32) in the edge region (22) of the object (2), wherein a light layer (43) 44) is formed which is composed of the linear light beams (33) of the laser beam sources (31, 32), and that said at least one camera as base camera (35) in the base plane (41) is directed sideways on the measuring plane so that it receives scattered light that originates of a light line (44) that is illuminated by the light layer (4) in the edge region (22) of the object (2).
    [2]
    Device according to claim 1, characterized in that the laser beam sources (31, 32) are arranged such that their line-shaped light beams (33) rotate around the edge region (22) of the disc-shaped object (2) in a U-shaped pattern.
    [3]
    Device according to claim 2, characterized in that the three laser beam sources (31, 32) are arranged such that a basic laser beam source (31) is placed in the base plane (41) while two other laser beam sources (32) are symmetrically arranged on either side of the basic laser beam source (31) in the measuring surface (43) are placed at an irradiation angle (45) of equal size but in the opposite sense, while being oriented at the common intersection (42).
    [4]
    Device according to claim 1, characterized in that an observation angle (46) lying in the base plane (41) between the base camera (35) and the base laser beam source (31) is adjustable within the range between 30 ° and ^ 90 °.
    [5]
    Device according to claim 1, characterized in that, in addition to the basic camera (35), two other cameras (37) are directed sideways to the measuring surface (43) and to the intersection (42) of the optical axes (34) of the laser beam sources (31) , 32) at the same angle of incidence transversely or below the base surface (41).
    [6]
    Device according to claim 1, characterized in that in addition to the base camera (35) a notch camera (38) is provided, the optical axis (36) of which lies in the base plane (41) at a lateral angle (48) with respect to of the base laser beam source (31), which angle is substantially smaller than the viewing angle (46) of the base camera (35) relative to the base laser beam source (31).
    [7]
    Device according to claim 1, characterized in that it comprises a linear guide (51) for moving the measuring device (3) in a direction orthogonal to the axis of rotation (12) of the turntable (11) about the measuring device (11) 3) adaptable to different diameters of the disc-shaped objeet (2).
    [8]
    Device according to claim 1, characterized in that it is provided with a centering camera (13) directed transversely to the base surface (41) for determining an eccentric position of the edge region (22) of the disc-shaped objeet (2) with respect to the axis of rotation (12) of the turntable (11), which is located outside the measuring plane (43) defined by the laser beam sources (31, 32), wherein the radial position of the centering camera (13) can be adjusted to a predetermined diameter of the object (2), with the centering camera (13) positioned opposite a diffuse exposure unit (14).
    [9]
    Device according to claim 8, characterized in that the angular position of the decentralizing camera (13) occupied in the base surface (41) with respect to the measuring surface (43) is used to calculate a follow-up movement of the measuring device (3) which compensates for the eccentricity.
    [10]
    Device according to claim 1, characterized in that for vibration decoupling of the measurements, a solid base plate (5) is provided, which is used as a single-component support for a table system (1) with the turntable (11), for a linear guide (51) and a support system (53) for the measuring device (3) and for further elements (13-15) of the device.
    类似技术:
    公开号 | 公开日 | 专利标题
    NL2010298A|2013-08-21|Device for noncontact determination of edge profile at a thin disk-shaped object.
    KR101578496B1|2015-12-18|Method for determining the tilt of an image sensor
    US9234843B2|2016-01-12|On-line, continuous monitoring in solar cell and fuel cell manufacturing using spectral reflectance imaging
    JPH0695075B2|1994-11-24|Surface texture detection method
    JP4486320B2|2010-06-23|Sensor alignment method in three-dimensional measurement system
    JP2014109579A|2014-06-12|Method and device for examining sample with beam emitted from neutron or x-ray beam source
    CN102077053A|2011-05-25|Vision system and method for mapping of ultrasonic data into cad space
    CN102473600A|2012-05-23|Exposure condition setting method and surface inspection apparatus
    JP6815336B2|2021-01-20|Interference roll-off measurement using static fringe pattern
    TW201730551A|2017-09-01|Inspection apparatus capable of shortening the time required for the inspection of an object under test
    US7792366B1|2010-09-07|Method of measuring amount of eccentricity
    US7656542B2|2010-02-02|Method for evaluating microstructures on a workpiece based on the orientation of a grating on the workpiece
    JP2013210231A|2013-10-10|Disk surface inspection method and device therefor
    JP2010256151A|2010-11-11|Shape measuring method
    JP2006105748A|2006-04-20|Analyzing method accompanied by incidence of beam
    CN111174716A|2020-05-19|Epitaxial layer thickness testing device and method
    EP2428794B1|2015-04-01|An inspection device for mechanical elements and the like
    JP2006349351A|2006-12-28|Three-dimensional microstructure measuring method
    JP2001004348A|2001-01-12|Method and device for inspecting roughness on outer peripheral surface of glass vessel
    JP5880957B2|2016-03-09|A device that detects surface changes using laser light
    JP6875243B2|2021-05-19|Plate-shaped inspection device
    US11047675B2|2021-06-29|Method and apparatus for inspection of spherical surfaces
    JP2000314707A|2000-11-14|Device and method for inspecting surface
    CN109798839B|2021-04-09|Surface measuring system
    JP2012068021A|2012-04-05|Slit light luminance distribution design method and optical cutting irregularity flaw detection device
    同族专利:
    公开号 | 公开日
    KR20130095211A|2013-08-27|
    NL2010298C2|2013-09-18|
    DE102012101301B4|2014-11-06|
    DE102012101301A1|2013-08-22|
    JP2013171042A|2013-09-02|
    US20130215258A1|2013-08-22|
    US9106807B2|2015-08-11|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US20030169916A1|2002-02-19|2003-09-11|Toshiba Ceramics Co., Ltd.|Wafer inspection apparatus|
    US20050023491A1|2003-07-28|2005-02-03|Young Roger Y. B.|Wafer edge defect inspection|
    US20090086483A1|2007-10-02|2009-04-02|Vistec Semiconductor System Gmbh|Illumination means and inspection means having an illumination means|
    DD286664A5|1989-07-03|1991-01-31|Veb Chemieanlagenbaukombinat,De|METHOD FOR THE OPTICAL PROFILE SCANNING OF WELDING WELDING|
    KR100264312B1|1995-10-13|2000-08-16|디지래드|Semiconductor radiation detector with enhanced charge collection|
    JPH11160031A|1997-12-01|1999-06-18|Dainippon Screen Mfg Co Ltd|Film thickness measuring apparatus|
    JP2001004341A|1999-06-16|2001-01-12|Toshiba Ceramics Co Ltd|Wafer shape measuring device|
    JP4949024B2|2003-07-14|2012-06-06|オーガストテクノロジーコーポレイション|Edge vertical part processing|
    JP4899297B2|2004-08-19|2012-03-21|富士通株式会社|Fuel cell|
    DE102004057092A1|2004-11-25|2006-06-01|Hauni Maschinenbau Ag|Measuring the diameter of rod-shaped articles of the tobacco processing industry|
    CN1977361B|2005-04-19|2011-04-27|株式会社荏原制作所|Substrate processing apparatus|
    JP4787012B2|2005-12-13|2011-10-05|大倉インダストリー株式会社|Cross-sectional shape measuring apparatus and cross-sectional shape measuring method|
    JP2008008636A|2006-06-27|2008-01-17|Reitetsukusu:Kk|Calibration method of edge inspection apparatus|
    DE102007024525B4|2007-03-19|2009-05-28|Vistec Semiconductor Systems Gmbh|Apparatus and method for evaluating defects at the edge area of a wafer|
    US8194241B2|2007-03-30|2012-06-05|Shibaura Mechatronics Corporation|Apparatus and method for inspecting edge of semiconductor wafer|
    JP5089286B2|2007-08-06|2012-12-05|株式会社神戸製鋼所|Shape measuring device and shape measuring method|
    JP2009222516A|2008-03-14|2009-10-01|Raytex Corp|Edge inspection apparatus and edge inspection method|
    JP5176975B2|2009-01-20|2013-04-03|トヨタ自動車株式会社|Stator coil shape inspection method and shape inspection jig|US9111979B2|2013-05-16|2015-08-18|Kevin P Fairbairn|System and method for real time positioning of a substrate in a vacuum processing system|
    CN105452802B|2013-07-19|2019-02-01|株式会社尼康|Shape measuring apparatus, structure manufacture system, process for measuring shape, structure manufacturing method, measuring shape program and recording medium|
    EP2894491B1|2013-12-18|2020-05-27|LG Electronics Inc.|Distance measuring device and method thereof|
    KR102138522B1|2013-12-18|2020-07-28|엘지전자 주식회사|Apparatus and method for measuringing the distance|
    US9734568B2|2014-02-25|2017-08-15|Kla-Tencor Corporation|Automated inline inspection and metrology using shadow-gram images|
    US10181185B2|2016-01-11|2019-01-15|Kla-Tencor Corp.|Image based specimen process control|
    NL2019007A|2016-06-13|2017-12-20|Asml Netherlands Bv|Methods and apparatus for determining the position of a target structure on a substrate, methods and apparatus for determining the position of a substrate|
    JP6249502B2|2016-06-13|2017-12-20|レーザーテック株式会社|Measuring apparatus, measuring method and correcting method|
    JP6210525B1|2017-02-20|2017-10-11|レーザーテック株式会社|Alignment method and alignment apparatus|
    EP3367053B1|2017-02-27|2021-02-17|Kulzer GmbH|3d scanner with gyroscope sensor|
    DE102017126786A1|2017-11-14|2019-05-16|Technische Universität Hamburg-Harburg|Apparatus and method for determining a position and / or orientation of a workpiece|
    法律状态:
    2019-10-09| MM| Lapsed because of non-payment of the annual fee|Effective date: 20190301 |
    优先权:
    申请号 | 申请日 | 专利标题
    DE102012101301.2A|DE102012101301B4|2012-02-17|2012-02-17|Device for non-contact edge profile determination on a thin disc-shaped object|
    DE102012101301|2012-02-17|
    [返回顶部]