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    • 专利摘要:
    A lithographic apparatus component, such as a metrology system or an optical element (e.g., a mirror) is provided with a temperature control system for controlling deformation of the component. The control system includes channels provided close to a surface of the component through which a two phase cooling medium is supplied. The metrology system measures a position of at least a moveable item with respect to a reference position and includes a metrology frame connected to the reference position. An encoder is connected to the moveable item and constructed and arranged to measure a relative position of the encoder with respect to a reference grid. The reference grid may be provided directly on a surface of the metrology frame. A lithographic projection apparatus may have the metrology system for measuring a position of the substrate table with respect to the projection system.
    公开号:NL2010185A
    申请号:NL2010185
    申请日:2013-01-25
    公开日:2013-08-01
    发明作者:Adrianus Koevoets；Sjoerd Donders；Jan Schoot；Koen Zaal；Theodorus Petrus Maria Cadee
    申请人:Asml Netherlands Bv；
    IPC主号:
    专利说明:

    LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING
    METHOD
    BACKGROUND
    Field of the Present Invention
    [0001] The present invention relates to a lithographic apparatus, and in particularrelates to components within a lithographic apparatus and to such componentsprovided with means for controlling deformation of such components. The inventionalso relates to a metrology system, a method for manufacturing a metrology systemand a method for manufacturing a device.
    Description of the Related Art
    [0002] A lithographic apparatus is a machine that applies a desired pattern onto asubstrate, usually onto a target portion of the substrate. A lithographic apparatus canbe used, for example, in the manufacture of integrated circuits (ICs). In such a case, apatterning device, which is alternatively referred to as a mask or a reticle, may beused to generate a circuit pattern to be formed on an individual layer of the IC. Thispattern can be transferred onto a target portion (e.g., including part of, one, or severaldies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically viaimaging onto a layer of radiation-sensitive material (resist) provided on the substrate.In general, a single substrate will contain a network of adjacent target portions that aresuccessively patterned. Conventional lithographic apparatus include so-calledsteppers, in which each target portion is irradiated by exposing an entire pattern ontothe target portion at once, and so-called scanners, in which each target portion isirradiated by scanning the pattern through a radiation beam in a given direction (the“scanning”-direction) while synchronously scanning the substrate parallel oranti-parallel to this direction. It is also possible to transfer the pattern from thepatterning device to the substrate by imprinting the pattern onto the substrate.
    [0003] A lithographic apparatus will comprise a plurality of different components (bywhich term is included not only single components but multiple components)assembled into a sub-assembly forming part of the lithographic apparatus.
    [0004] For example, within the lithographic apparatus it may be important that theposition of a moveable item, e.g., the substrate table may be measured with a highprecision by a metrology system with respect to a reference position, e.g., theprojection system. For this purpose a metrology frame may be connected to at least a portion of the projection system to provide a reference. A reference grid plate may bemounted to the metrology frame and the grid plate may be used by an encodermounted to the substrate table to measure the position of the substrate table. The gridplate may be sensitive for vibrations caused by turbulence caused by the movingsubstrate table.
    [0005] A lithographic apparatus will also be provided with multiple optical elementsincluding for example mirrors and mirror assemblies.
    SUMMARY
    [0006] It is desirable to provide an improved metrology system.
    [0007] It is desirable to provide components for a lithographic apparatus providedwith means for controlling (including avoiding) thermal deformation of components,including but not limited to an improved metrology system and an improved opticalelement such as a mirror.
    [0008] According to one aspect of the present invention there is provided a metrologysystem for measuring a position of at least a moveable item with respect to a referenceposition and comprising, a metrology frame connected to the reference position, andan encoder connected to the moveable item and constructed and arranged tomeasure a relative position of the encoder with respect to a reference grid, wherein thereference grid is provided directly on a surface of the metrology frame.
    [0009] By providing the reference grid directly on the surface of the metrology framethe reference grid may be less sensitive to turbulence caused by, for example themoving substrate table because the metrology frame may be more stiff and heavierthan the grid plate and therefore less sensitive for disturbance forces.
    [0010] In another embodiment, there is provided a device manufacturing methodcomprising transferring a pattern from a patterning device onto a substrate provided toa substrate table via a projection system of a metrology system, the apparatuscomprising a metrology system provided with a metrology frame connected to at leasta part of the projection system, wherein the method comprises: measuring a positionof the substrate table with an encoder using a reference grid provided directly on asurface of the metrology frame, and projecting the pattern on the substrate with theprojection system creating the device.
    [0011] According to a further embodiment, there is provided a method formanufacturing a metrology system comprising: providing a frame, providing areference grid directly on the frame, and, connecting the frame to a reference positionof the metrology system so as to provide a reference grid to a metrology system tomeasure a position of a substrate table with respect to the projection system.
    [0012] According to another aspect of the present invention there is provided alithographic apparatus component wherein said component is provided with channelsfor providing a temperature control medium to the said component.
    [0013] In a preferred embodiment of the invention the component comprises anoptical element. Preferably the temperature control medium is provided only to thoseregions of the optical component used in image formation. Preferably the opticalelement comprises a mirror.
    [0014] Preferably the channels are provided parallel to at least one surface of theoptical element. Preferably the temperature control medium is a two phase medium.
    [0015] Preferably the channels are grouped together in channel groups. Preferablyeach group is provided with its own temperature control system.
    [0016] Further features and advantages of the present invention, as well as thestructure and operation of various embodiments of the present invention, aredescribed in detail below with reference to the accompanying drawings. It is notedthat the present invention is not limited to the specific embodiments described herein.Such embodiments are presented herein for illustrative purposes only. Additionalembodiments will be apparent to persons skilled in the relevant art(s) based on theteachings contained herein.
    BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES
    [0017] The accompanying drawings, which are incorporated herein and form part ofthe specification, illustrate the present invention and, together with the description,further serve to explain the principles of the present invention and to enable a personskilled in the relevant art(s) to make and use the present invention.
    [0018] Figure 1 depicts a lithographic apparatus for using a metrology frameaccording to an embodiment of the present invention.
    [0019] Figure 2 depicts a metrology frame according to the prior art.
    [0020] Figure 3 depicts a metrology frame according to an embodiment.
    [0021] Figure 4 depicts a metrology frame according to a further embodiment.
    [0022] Figures 5(a) and 5(b) depict a mirror according to an embodiment.
    [0023] Figures 6(a) and 6(b) depict a mirror according to a further embodiment.
    [0024] Figures 7(a) and 7(b) depict a mirror according to a further embodiment.
    [0025] Figures 8(a) and 8(b) depict a mirror according to a further embodiment.
    [0026] The features and advantages of the present invention will become moreapparent from the detailed description set forth below when taken in conjunction withthe drawings, in which like reference characters identify corresponding elementsthroughout. In the drawings, like reference numbers generally indicate identical,functionally similar, and/or structurally similar elements. The drawing in which anelement first appears is indicated by the leftmost digit(s) in the correspondingreference number.
    DETAILED DESCRIPTION
    [0027] This specification discloses one or more embodiments that incorporate thefeatures of this invention. The disclosed embodiment(s) merely exemplify the presentinvention. The scope of the present invention is not limited to the disclosedembodiment(s). The present invention is defined by the clauses appended hereto.
    [0028] The embodiment(s) described, and references in the specification to “oneembodiment,” “an embodiment,” “an example embodiment,” etc., indicate that theembodiment(s) described may include a particular feature, structure, or characteristic,but every embodiment may not necessarily include the particular feature, structure, orcharacteristic. Moreover, such phrases are not necessarily referring to the sameembodiment. Further, when a particular feature, structure, or characteristic isdescribed in connection with an embodiment, it is understood that it is within theknowledge of one skilled in the art to effect such feature, structure, or characteristic inconnection with other embodiments whether or not explicitly described.
    [0029] Embodiments of the present invention may be implemented in hardware,firmware, software, or any combination thereof. Embodiments of the presentinvention may also be implemented as instructions stored on a machine-readablemedium, which may be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting informationin a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read only memory (ROM); random access memory(RAM); magnetic disk storage media; optical storage media; flash memory devices;electrical, optical, acoustical or other forms of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), and others. Further, firmware, software,routines, instructions may be described herein as performing certain actions.However, it should be appreciated that such descriptions are merely for convenienceand that such actions in fact result from computing devices, processors, controllers, orother devices executing the firmware, software, routines, instructions, etc.
    [0030] Before describing such embodiments in more detail, however, it is instructiveto present an example environment in which embodiments of the present inventionmay be implemented.
    [0031] Figure 1 schematically depicts a lithographic apparatus according to oneembodiment of the present invention. The apparatus includes an illumination system(illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or anyother suitable radiation), a mask support structure (e.g., a mask table) MT constructedto support a patterning device (e.g., a mask) MA and connected to a first positioningdevice PM configured to accurately position the patterning device in accordance withcertain parameters. The apparatus also includes a substrate table (e.g., a wafer table)WT or “substrate support” constructed to hold a substrate (e.g., a resist-coated wafer)W and connected to a second positioning device PW configured to accurately positionthe substrate in accordance with certain parameters. The apparatus further includes aprojection system (e.g., a refractive projection lens system) PS configured to project apattern imparted to the radiation beam B by patterning device MA onto a targetportion C (e.g., including one or more dies) of the substrate W.
    [0032] The illumination system may include various types of optical components,such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types ofoptical components, or any combination thereof, for directing, shaping, or controllingradiation.
    [0033] The mask support structure supports, i.e., bears the weight of, the patterningdevice. It holds the patterning device in a manner that depends on the orientation ofthe patterning device, the design of the lithographic apparatus, and other conditions,such as for example whether or not the patterning device is held in a vacuumenvironment. The mask support structure can use mechanical, vacuum, electrostatic orother clamping techniques to hold the patterning device. The mask support structuremay be a frame or a table, for example, which may be fixed or movable as required.The mask support structure may ensure that the patterning device is at a desiredposition, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term“patterning device.”
    [0034] The term “patterning device” used herein should be broadly interpreted asreferring to any device that can be used to impart a radiation beam with a pattern in itscross-section so as to create a pattern in a target portion of the substrate. It should benoted that the pattern imparted to the radiation beam may not exactly correspond tothe desired pattern in the target portion of the substrate, for example if the patternincludes phase-shifting features or so called assist features. Generally, the patternimparted to the radiation beam will correspond to a particular functional layer in adevice being created in the target portion, such as an integrated circuit.
    [0035] The patterning device may be transmissive or reflective. Examples ofpatterning devices include masks, programmable mirror arrays, and programmableLCD panels. Masks are well known in lithography, and include mask types such asbinary, alternating phase-shift, and attenuated phase-shift, as well as various hybridmask types. An example of a programmable mirror array employs a matrixarrangement of small mirrors, each of which can be individually tilted so as to reflectan incoming radiation beam in different directions. The tilted mirrors impart a patternin a radiation beam which is-reflected by the mirror matrix.
    [0036] The term “projection system” used herein should be broadly interpreted asencompassing any type of projection system, including refractive, reflective,catadioptric, magnetic, electromagnetic and electrostatic optical systems, or anycombination thereof, as appropriate for the exposure radiation being used, or for otherfactors such as the use of an immersion liquid or the use of a vacuum. Any use of theterm “projection lens” herein may be considered as synonymous with the moregeneral term “projection system.”
    [0037] As here depicted, the apparatus is of a transmissive type (e.g., employing atransmissive mask). Alternatively, the apparatus may be of a reflective type (e.g.,employing a programmable mirror array of a type as referred to above, or employinga reflective mask).
    [0038] The lithographic apparatus may be of a type having two (dual stage) or moresubstrate tables or “substrate supports” (and/or two or more mask tables or “masksupports”). In such “multiple stage” machines the additional tables or supports may beused in parallel, or preparatory steps may be carried out on one or more tables orsupports while one or more other tables or supports are being used for exposure.
    [0039] The lithographic apparatus may also be of a type wherein at least a portion ofthe substrate may be covered by a liquid having a relatively high refractive index, e.g.,water, so as to fill a space between the projection system and the substrate.-Animmersion liquid may also be applied to other spaces in the lithographic apparatus, forexample, between the mask and the projection system. Immersion techniques can beused to increase the numerical aperture of projection systems. The term “immersion”as used herein does not mean that a structure, such as a substrate, must be submergedin liquid, but rather only means that a liquid is located between the projection systemand the substrate during exposure.
    [0040] Referring to Figure 1, the illuminator IL receives a radiation beam from aradiation source SO. The source and the lithographic apparatus may be separateentities, for example when the source is an excimer laser. In such cases, the source isnot considered to form part of the lithographic apparatus and the radiation beam ispassed from the source SO to the illuminator IL with the aid of a beam deliverysystem BD including, for example, suitable directing mirrors and/or a beam expander.In other cases the source may be an integral part of the lithographic apparatus, forexample when the source is a mercury lamp. The source SO and the illuminator IL,together with the beam delivery system BD if required, may be referred to as aradiation system.
    [0041] The illuminator IL may include an adjuster AD configured to adjust theangular intensity distribution of the radiation beam. Generally, at least the outerand/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively)of the intensity distribution in a pupil plane of the illuminator can be adjusted. Inaddition, the illuminator IL may include various other components, such as anintegrator IN and a condenser CO. The illuminator may be used to condition theradiation beam, to have a desired uniformity and intensity distribution in itscross-section.
    [0042] The radiation beam B is incident on the patterning device (e.g., mask MA),which is held on the mask support structure (e.g., mask table MT), and is patterned bythe patterning device. Having traversed the mask MA, the radiation beam B passesthrough the projection system PS, which focuses the beam onto a target portion C ofthe substrate W. With the aid of the second positioning device PW and position sensorIF (e.g., an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g., so as to position different target portions C inthe path of the radiation beam B. Similarly, the first positioning device PM andanother position sensor (which is not explicitly depicted in Figure 1) can be used toaccurately position the mask MA with respect to the path of the radiation beam B,e.g., after mechanical retrieval from a mask library, or during a scan. In general,movement of the mask table MT may be realized with the aid of a long-stroke module(coarse positioning) and a short-stroke module (fine positioning), which form part ofthe first positioning device PM. Similarly, movement of the substrate table WT or“substrate support” may be realized using a long-stroke module and a short-strokemodule, which form part of the second positioner PW. In the case of a stepper (asopposed to a scanner) the mask table MT may be connected to a short-stroke actuatoronly, or may be fixed. Mask MA and substrate W may be aligned using maskalignment marks Ml, M2 and substrate alignment marks PI, P2. Although thesubstrate alignment marks as illustrated occupy dedicated target portions, they may belocated in spaces between target portions (these are known as scribe-lane alignmentmarks). Similarly, in situations in which more than one die is provided on the maskMA, the mask alignment marks may be located between the dies.
    [0043] The depicted apparatus could be used in at least one of the following modes:
    [0044] 1. In step mode, the mask table MT or “mask support” and the substrate table WT or “substrate support” are kept essentially stationary, while an entire patternimparted to the radiation beam is projected onto a target portion C at one time (i.e., asingle static exposure). The substrate table WT or “substrate support” is then shiftedin the X and/or Y direction so that a different target portion C can be exposed. In stepmode, the maximum size of the exposure field limits the size of the target portion Cimaged in a single static exposure.
    [0045] 2. In scan mode, the mask table MT or “mask support” and the substrate table WT or “substrate support” are scanned synchronously while a pattern impartedto the radiation beam is projected onto a target portion C (i.e., a single dynamicexposure). The velocity and direction of the substrate table WT or “substrate support”relative to the mask table MT or “mask support” may be determined by the (de-)magnification and image reversal characteristics of the projection system PS. In scanmode, the maximum size of the exposure field limits the width (in the non-scanningdirection) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the targetportion.
    [0046] 3. In another mode, the mask table MT or “mask support” is keptessentially stationary holding a programmable patterning device, and the substratetable WT or “substrate support” is moved or scanned while a pattern imparted to theradiation beam is projected onto a target portion C. In this mode, generally a pulsedradiation source is employed and the programmable patterning device is updated asrequired after each movement of the substrate table WT or “substrate support” or inbetween successive radiation pulses during a scan. This mode of operation can bereadily applied to maskless lithography that utilizes programmable patterning device,such as a programmable mirror array of a type as referred to above.
    [0047] Combinations and/or variations on the above described modes of use orentirely different modes of use may also be employed.
    [0048] Figure 2 depicts a metrology frame according to the prior art. The metrologyframe MF may be connected to at least a portion of the projection system (PS inFigure 1) to provide a reference to the projection system. A grid plate GP made ofZerodur™ may be mounted to the metrology frame MF and the grid GR may be usedby an encoder provided to the substrate table (WT in Figure 1) to measure the positionof the substrate table with respect to the projection system. Alternatively, the‘gridplate’ may be mounted to the substrate table WT (in Figure 1) and the encodermay be mounted to the metrology frame to measure the position of the substrate tablewith respect to the metrology frame. The metrology frame MF and the grid-plate GPmay be mounted to each other having dynamics in a similar frequency range. Animportant disturbance force for the metrology frame MF (or indeed any other surfacethat is to be cooled) may be flow induced vibrations, which may lead to vibrationproblems in both the metrology frame MF, and due to a resonating mount in vibrationproblems in the grid plate GP. The grid plate GP may also suffer from vibrationscaused by turbulence caused by the moving substrate table. A damper, for example oildamper OD may be used for damping vibrations in the resonating mount between themetrology frame MF and the grid plates GP.
    [0049] Figure 3 depicts an embodiment of the present invention where thelithographic apparatus component comprises a metrology frame. This embodiment ofthe present invention integrates the functionality of the metrology frame MF and thegrid plate GP into one structure. The grid GR is written onto the metrology frame MF.
    The grid may be protected with a protective layer on top. The metrology frame MFmay be made from Aluminium or SiSiC. SiSiC may have better stiffness-properties(i.e., dynamical performance) and a 10 times lower CTE (coefficient of thermalexpansion). The metrology frame MF may be provided with channels CH forproviding a temperature control medium to the metrology frame MF. The channelsmay be provided near the surface of the metrology frame so as to circumvent a heatload to reach the center of the metrology frame MF. The temperature control mediummay be water or may be a two phase cooling medium, for example C02 as explainedin more detail with reference to US provisional applications nos. 61/477,496 and US61/587,344, which are incorporated by reference herein in their entireties. Usage ofC02 solves the current flow induced vibration problem of the metrology frame MF(or other surfaces to be cooled) because there is less current flow of fluids through thechannels. The heat transfer efficiency of C02 is much higher compared to coolingwater with a realistic current flow. The aluminum metrology frame MF may have alow thermal sensitivity while it has both a significant thermal mass and more over avery high conduction to the channels, due to the large cooling-area and the significantcooling with the high convection mass. The aluminum metrology frame MF may havea relatively high coefficient of thermal expansion and the frame may expand relativelymuch assuming a certain temperature rise. This may be solved by preventingtemperature rises, for example by using the very high heat-transfer coefficient of C02resulting in low milli-Kelvin rises. Further it may be solved or compensated for bymeasuring the deformation with a deformation measurement system. The deformationmay be measured by having a deformation measurement system comprising a bar ZB,for example made of Zerodur ™ provided to the metrology frame. The bar ZB may befixed at one point FF to the rest of the metrology frame MF and at the other side maybe freely moveable with respect to the rest of the metrology frame. With a sensor, forexample a capacitive sensor CS the relative movement between the Zerodur ™ endpoint and the metrology frame MF may be measured. For this purpose the capacitivesensor may comprise a first electrode provided to a first portion of the metrologyframe and a second electrode to a second portion of the metrology frame e.g., the barZB and the capacitive sensor may determine a displacement between the electrodes tomeasure the deformation of the metrology frame. The measured deformation may beused to adjust the metrology system so as to compensate for the deformation of themetrology frame. Two deformation measurement systems in first direction are depicted but more may be used to measure the deformation in multiple directions. Forexample the deformation may be measured in a second direction perpendicular to thefirst direction so as to also compensate deformations in the second direction.
    [0050] Figure 4 depicts a further embodiment of the present invention in the form of ametrology frame. Again, the deformation is measured similar as in Figure 3 with adeformation measurement system. The measurement result may be forwarded to adeformation controller DMC operable connected to the deformation measurementsystem. As a function of the measured deformation a pressure control systemconstructed and programmed to adjust a pressure of a two phase medium in a group ofchannels may adjust a temperature of the group of channels by adjusting the pressure.Because of the very high heat-transfer coefficient of a two phase medium we maycontrol very small temperature rises and therefore deformations. Note that the impactof a local heat loads may be very well counteracted by the C02. Because the effect ofa more local heat load results in a locally higher flux the heat-transfer coefficient ofthe 2-phase cooling medium increases, counteracting the impact of hot-spots. Themetrology frame may be provided with multiple groups of channels with theirindividual deformation controllers DMC, temperature controls systems anddeformation measurement systems to control the temperature in each groupindividually to control deformation of the metrology frame in multiple degrees offreedom. The channels may be grouped together in channel groups and each groupmay be provided with its own temperature control system connected with its owndeformation controller DMC. For example, in the metrology frame of Figure 4 thedeformation controller DMC in the top portion of the metrology frame MF may beused to control the channel group CH in the top portion of the metrology frame tominimize deformation.
    [0051] Figures 5(a) and 5(b) show another embodiment of the invention in which thelithographic apparatus part comprises an optical element. In this embodiment theoptical element is a mirror. In this embodiment the mirror may comprise a mirrorbody MB formed of a material of low coefficient of thermal expansion (CTE) such asa glass or ceramic material. One surface of the mirror body MB will be provided witha reflective coating as is known in the art. The mirror body is provided with twochannels CH A and CH B that extend parallel and close to the surfaces of the mirrorbody MB. A temperature control medium which may be water but which is preferablya two phase medium such as C02 is passed through the two channels CH A and CH
    B. If the temperature of the temperature control medium flowing through channel CHA is the same as the temperature of the control medium flowing through channel CHB then the mirror will remain flat as shown in Figure 5(a). However, if there is adifference in temperature between the temperature control medium in one channel andthe temperature control medium in the other channel, then the mirror may be causedto deform. For example, Figure 5(b) shows a deformation when the temperature inCH A is less than CH B.
    [0052] It will be understood that Figures 5(a) and 5(b) show the mirror in section andtherefore show only two channels CH A and CH B close to the two respectivesurfaces. In practice there may be multiple parallel channels CH A and multipleparallel channels CH B such that there are temperature control channels spread oversubstantially the entire surfaces of the mirror body MB. Equally it may be possible tolocate the temperature control channels only adjacent areas of the mirror surfaceswhere such control is particularly required.
    [0053] While a single phase temperature control medium such as water may beemployed, a two phase medium is preferred as compared with a one phase mediumonly a small flow is required to transport large heat flow resulting in far less flow-induced mirror deformation.
    [0054] The embodiment of Figures 5(a) and (b) is particularly suited to situationswhere it is desired to avoid thermal mirror deflection. However, if the low CTEmaterial is replaced with a material of a higher CTE, such as aluminium, the sameprinciples can be used to enable controlled desired mirror deflection.
    [0055] In the embodiment of Figures 6(a) and 6(b) the mirror body MB is made of amaterial with a higher coefficient of thermal expansion, such as aluminium. In thisembodiment there are provided a group of two first temperature control channels CHA located at different distances from the surface of the mirror body MB, and a groupof two second temperature control channels CH B also located at different distancesfrom the surface of the mirror body. By selectively providing temperature controlmedium to the two groupings of different temperatures the mirror can be caused todeform as shown in Figure 6(b). One option here would be to provide one system forsupplying C02 to the A group of channels, and a second system for supplying C02 tothe B group of channels.
    [0056] Another option is shown in Figures 7(a) and 7(b) where the groups of channelscan be increased in number to provide a greater degree of control. It would also be possible to provide more than two groups of channels and each group of channelswould be provided with its own C02 supply for independent temperature control. Agreater number of channel groups provides for smaller temperature differencesbetween them resulting in lower stress between channels. This also results in a lowerheat flux of the whole system because temperature differences are smaller over thesame thickness of material. This provides lower energy consumption and betterthermal control.
    [0057] It will also be understood that it may not be necessary to provide thermalcontrol over the entirety of the mirror (or other component) where in use thermalcontrol of only selected regions is necessary. This is illustrated schematically inFigures 8(a) and 8(b). Figure 8(a) depicts schematically a mirror 1 where in useimages 2 are formed at - in this example - left and right regions. If the images areconsistently formed only in these regions then it may be sufficient to provide thermalcontrol to these regions only. This is illustrated in Figure 8(b) which shows the areas 3used in exposure and image formation. The thermal control may be applied to onlythese regions, and other regions of the mirror may be provided either with no thermalcontrol or with less sensitive thermal control.
    [0058] It will be understood that the optical element could be provided with adeformation measurement system similar to that described previously with referenceto the metrology system. That is to say that the optical element may be provided witha deformation measurement system provided with a capacitive sensor comprising afirst electrode provided to a first portion of the optical element and a second electrodeto a second portion of the optical element, with the capacitive sensor determining adisplacement between the electrodes to determine the deformation of the element.Alternatively the optical element may be provided with an interferometer formeasuring a deformation. There may also be provided a deformation controlleroperably connected to the deformation measurement system and the temperaturecontrol system may be a pressure control system constructed and programmed toadjust a pressure of the two phase medium in a group of channels such as to adjust atemperature of the group of channels as a function of the measured deformation by thedeformation measurement system.
    [0059] Alternatively deformation of an optical element may be determined indirectlyby determining the position, focus or other optical parameters of an image and in the event of an error in such parameters being detected generating a correction signal thatmay be fed back to the temperature control system to make a correcting adjustment.
    [0060] The use of a two phase (liquid and gas) temperature control medium such asC02 is particularly preferred because it provides a faster response time than a onephase medium such as water because in a two phase system the local pressure dictatesimmediately the local fluid temperature and thus the critical speed is the speed ofsound in the liquid phase rather than the speed of the cooling fluid in the channelwhich is the critical speed in a one phase liquid only system. A two phase system istherefore very fast and results in equal distribution over the whole surface in contactwith the two phase medium. The groups of channels will be provided withtemperature control medium supplied from control systems that can adjust thetemperature of the temperature control medium in response to feedback data that maybe obtained, for example, by means of a deformation measurement system asdiscussed above or in response to a focus or other optical parameter control system.
    [0061] It will of course be understood that while the optical element in the form of amirror is particularly useful for use in lithographic apparatus, it could have manyother possible uses including for example focus control of mirrors in other forms ofapparatus such as lasers and telescopes. At least in preferred embodiments the presentinvention enables extremely good thermal conditioning of mirrors (with a temperaturecontrol resolution in terms of mKelvins), with very low flow noise and fast activecontrol.
    [0062] Furthermore, in preferred embodiments of the invention where there aremultiple two-phase fluid pressure control loops it is possible to control deformation ofthe mirror with n degrees of freedom. In particular, where there are 1 + n controlloops with the cooling channels suitable positioned to avoid crosstalk, the mirror canbe deformed with n degrees of freedom by controlling the local temperatures of thechannels.
    [0063] Although specific reference may be made in this text to the use of lithographicapparatus in the manufacture of ICs, it should be understood that the lithographicapparatus described herein may have other applications, such as the manufacture ofintegrated optical systems, guidance and detection patterns for magnetic domainmemories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magneticheads, etc. The skilled artisan will appreciate that, in the context of such alternativeapplications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion,” respectively.The substrate referred to herein may be processed, before or after exposure, in forexample a track (a tool that typically applies a layer of resist to a substrate anddevelops the exposed resist), a metrology tool and/or an inspection tool. Whereapplicable, the disclosure herein may be applied to such and other substrateprocessing tools. Further, the substrate may be processed more than once, for examplein order to create a multi-layer IC, so that the term substrate used herein may alsorefer to a substrate that already contains multiple processed layers.
    [0064] Although specific reference may have been made above to the use ofembodiments of the present invention in the context of optical lithography, it will beappreciated that the present invention may be used in other applications, for exampleimprint lithography, and where the context allows, is not limited to opticallithography. In imprint lithography a topography in a patterning device defines thepattern created on a substrate. The topography of the patterning device may bepressed into a layer of resist supplied to the substrate whereupon the resist is cured byapplying electromagnetic radiation, heat, pressure or a combination thereof. Thepatterning device is moved out of the resist leaving a pattern in it after the resist iscured.
    [0065] The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g., having awavelength of or about 365, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV)radiation (e.g., having a wavelength in the range of 5-20 nm), as well as particlebeams, such as ion beams or electron beams.
    [0066] The term “lens,” where the context allows, may refer to any one orcombination of various types of optical components, including refractive, reflective,magnetic, electromagnetic and electrostatic optical components.
    [0067] While specific embodiments of the present invention have been describedabove, it will be appreciated that the present invention may be practiced otherwisethan as described. For example, the present invention may take the form of acomputer program containing one or more sequences of machine-readableinstructions describing a method as disclosed above, or a data storage medium (e.g.,semiconductor memory, magnetic or optical disk) having such a computer programstored therein.
    [0068] The descriptions above are intended to be illustrative, not limiting. Thus, itwill be apparent to one skilled in the art that modifications may be made to the presentinvention as described without departing from the scope of the clauses set out below.
    [0069] It is to be appreciated that the Detailed Description section, and not theSummary and Abstract sections, is intended to be used to interpret the clauses. TheSummary and Abstract sections may set forth one or more but not all exemplaryembodiments of the present invention as contemplated by the inventor(s), and thus,are not intended to limit the present invention and the appended clauses in any way.
    [0070] The present invention has been described above with the aid of functionalbuilding blocks illustrating the implementation of specified functions andrelationships thereof. The boundaries of these functional building blocks have beenarbitrarily defined herein for the convenience of the description. Alternate boundariescan be defined so long as the specified functions and relationships thereof areappropriately performed.
    [0071] The foregoing description of the specific embodiments will so fully reveal thegeneral nature of the present invention that others can, by applying knowledge withinthe skill of the art, readily modify and/or adapt for various applications such specificembodiments, without undue experimentation, without departing from the generalconcept of the present invention. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of the disclosedembodiments, based on the teaching and guidance presented herein. It is to beunderstood that the phraseology or terminology herein is for the purpose ofdescription and not of limitation, such that the terminology or phraseology of thepresent specification is to be interpreted by the skilled artisan in light of the teachingsand guidance.
    [0072] The breadth and scope of the present invention should not be limited by any ofthe above-described exemplary embodiments, but should be defined only inaccordance with the following clauses and clauses and their equivalents. Other aspectsof the invention are set out as in the following numbered clauses: 1. A metrology system for measuring a position of at least a moveable item with respect to a reference and comprising; a metrology frame connected to the reference; and an encoder connected to the moveable item and constructed and arranged tomeasure a relative position of the encoder with respect to a reference grid, wherein thereference grid is provided directly on a surface of the metrology frame.
    2. The metrology system according to clause 1, wherein the metrology frame isprovided with channels for providing a temperature control medium to the metrology frame.
    3. The metrology system according to clause 2, wherein the medium is a twophase medium and the channel functions as a heat pipe.
    4. The metrology system according to clause 3, wherein the two phase medium iscarbon dioxide.
    5. The metrology system according to any of clause 2 to 4, wherein the channelsare provided near the surface of the metrology frame.
    6. The metrology system according to any of clauses 2 to 5, wherein the channelsare grouped together in channel groups, each group provided with its own temperaturecontrol system.
    7. The metrology system according to any of clauses 1 to 6, wherein themetrology frame is provided with a deformation measurement system for measuring adeformation of the metrology frame.
    8. The metrology system according to clause 7, wherein the deformationmeasurement system is provided with a capacitive sensor comprising a first electrodeprovided to a first portion of the metrology frame and a second electrode to a second portionof the metrology frame and the capacitive sensor determines a displacement between theelectrodes to determine the deformation of the metrology frame.
    9. The metrology system according to clause 7, wherein the deformationmeasurement system is provided with an interferometer for measuring a deformation of themetrology frame.
    10. The metrology system according to any of clauses 7 to 9, when dependent onclause 6, wherein the apparatus is provided with a deformation controller operably connectedto the deformation measurement system and the temperature control system is a pressurecontrol system constructed and programmed to adjust a pressure of the two phase medium ina group of channels such as to adjust a temperature of the group of channels as a function ofthe measured deformation by the deformation measurement system.
    11. The metrology system according to any of the preceding clauses wherein themetrology frame comprises a metal, such as aluminum.
    12. The metrology system according to any of the preceding clauses, wherein thereference grid is etched in the metrology frame.
    13. The metrology system according to any of the preceding clauses, wherein themetrology frame is provided with a protective layer on top of the reference grid.
    14. A lithographic projection apparatus comprising the metrology systemaccording to any of the preceding clauses, wherein the moveable item is a substrate table, thereference position is a projection system and the metrology system is used to measure aposition of the substrate table with respect to the projection system.
    15. A device manufacturing method comprising transferring a pattern from apatterning device onto a substrate provided to a substrate table via a projection system of ametrology system, the apparatus comprising a metrology system provided with a metrologyframe connected to at least a part of the projection system, wherein the method comprises: measuring a position of the substrate table with an encoder using a referencegrid provided directly on a surface of the metrology frame; and projecting the pattern on the substrate with the projection system creating the device.
    16. A method for manufacturing a metrology system comprising:providing a frame; providing a reference grid directly on the frame; and, connecting the frame to a reference position of the metrology system so as toprovide a reference grid to a metrology system to measure a position of a substrate table withrespect to the projection system.
    17. The method according to clause 16, wherein the method comprises providing aprotective layer on the reference grid on the frame.
    18. A metrology system comprising: a metrology frame connected to a reference; and an encoder connected to a moveable item and constructed and arranged tomeasure a relative position of the encoder with respect to a reference grid, wherein thereference grid is provided directly on a surface of the metrology frame.
    19. The metrology system according to clause 18, wherein the metrology frame isprovided with channels for providing a temperature control medium to the metrology frame.
    20. The metrology system according to clause 19, wherein the medium is a twophase medium and the channel functions as a heat pipe.
    21. The metrology system according to clause 20, wherein the two phase mediumis carbon dioxide.
    22. The metrology system according to clause 19, wherein the channels areprovided near the surface of the metrology frame.
    23. The metrology system according to clause 19, wherein the channels aregrouped together in channel groups, each group provided with its own temperature controlsystem.
    24. The metrology system according to clause 18, wherein the metrology frame isprovided with a deformation measurement system for measuring a deformation of themetrology frame.
    25. The metrology system according to clause 24, wherein the deformationmeasurement system further comprising: a capacitive sensor comprising a first electrode provided to a first portion ofthe metrology frame and a second electrode to a second portion of the metrology frame, wherein the capacitive sensor determines a displacement between theelectrodes to determine the deformation of the metrology frame.
    26. The metrology system according to clause 24, wherein the deformationmeasurement system is provided with an interferometer for measuring a deformation of themetrology frame.
    27. The metrology system according to clauses 24, wherein the apparatus furthercomprises: a deformation controller operably connected to the deformation measurement system; wherein the temperature control system is a pressure control systemconstructed and programmed to adjust a pressure of the two phase medium in a group ofchannels such as to adjust a temperature of the group of channels as a function of themeasured deformation by the deformation measurement system.
    28. The metrology system according to clause 18, wherein the metrology framecomprises a metal or aluminum.
    29. The metrology system according to clause 18, wherein the reference grid isetched in the metrology frame.
    30. The metrology system according to clause 18, wherein the metrology frame isprovided with a protective layer on top of the reference grid.
    31. The metrology system according to clause 18, wherein the moveable item is asubstrate table, the reference position is a projection system and the metrology system is usedto measure a position of the substrate table with respect to the projection system.
    32. A device manufacturing method that transfers a pattern from a patterningdevice onto a substrate provided to a substrate table via a projection system of a metrologysystem, the apparatus comprising a metrology system provided with a metrology frameconnected to at least a part of the projection system, wherein the method comprises: measuring a position of the substrate table with an encoder using a referencegrid provided directly on a surface of the metrology frame; and projecting the pattern on the substrate with the projection system creating the device.
    33. A method for manufacturing a metrology system comprising:providing a frame; providing a reference grid directly on the frame; and, connecting the frame to a reference position of the metrology system so as toprovide a reference grid to a metrology system to measure a position of a substrate table withrespect to the projection system.
    34. The method according to clause 33, wherein the method comprises providing aprotective layer on the reference grid on the frame.
    35. A lithographic apparatus component wherein said component is provided withchannels for providing a temperature control medium to the component.
    36. Apparatus as claimed in clause 35 wherein the medium is a two phase mediumand the channel functions as a heat pipe.
    37. Apparatus as claimed in clause 36 wherein the two phase medium is carbondioxide.
    38. Apparatus as claimed in clause 35 wherein at least some of the channels areprovided near to a surface of the component.
    39. Apparatus as claimed in clause 35 or 36 wherein the channels are providedparallel to a surface of the component.
    40. Apparatus as claimed in any of clauses 35 to 37 wherein the channels aregrouped together in channel groups, each group being provided with its own temperaturecontrol system.
    41. Apparatus as claimed in any of clauses 35 to 38 wherein said apparatus isprovided with a deformation measurement system.
    42. Apparatus as claimed in clause 39 wherein the deformation measurementsystem comprises: a capacitive sensor comprising a first electrode provided to a first portion ofthe apparatus frame and a second electrode to a second portion of the apparatus, wherein the capacitive sensor determines a displacement between theelectrodes to determine the deformation of the apparatus.
    43. Apparatus as claimed in clause 39 wherein the deformation measurementsystem is provided with an interferometer for measuring a deformation of the metrologyframe 44. Apparatus as claimed in any of clauses 39 to 41, wherein the apparatus isprovided with a deformation controller operably connected to the deformation measurementsystem and the temperature control system is a pressure control system constructed andprogrammed to adjust a pressure of the two phase medium in a group of channels such as toadjust a temperature of the group of channels as a function of the measured deformation bythe deformation measurement system.
    45. Apparatus as claimed in any of clauses 39 to 42 wherein the component isformed of a metal.
    46. Apparatus as claimed in any of clauses 35 to 43 wherein the component is anoptical element.
    47. Apparatus as claimed in clause 46 wherein said temperature control medium isprovided only to those regions of said optical component used in image formation.
    48. Apparatus as claimed in clause 44 wherein the optical element is a mirror.
    49. Apparatus as claimed in clause 45 wherein the temperature control medium issupplied at different temperatures to respective channels to cause a controlled deformation ofsaid mirror.
    50. Apparatus as claimed in any of clauses 35 to 38 wherein deformation of anoptical element may be determined indirectly by determining optical parameters of an imageand in the event of an error in such parameters being detected generating a correction signalthat may be fed back to a temperature control system to make a correcting adjustment.
    51. Apparatus as claimed in any of clauses 35 to 48 comprising a 1 + n (n being aninteger) two-phase fluid pressure control loops whereby deformation of the mirror iscontrolled with n degrees of freedom.
    52. A lithographic apparatus including a component provided with channels forproviding a temperature control medium to the component.
    53. A lithographic apparatus as claimed in clause 52 wherein said component is anoptical element and wherein deformation of an optical element may be determined indirectlyby determining optical parameters of an image and in the event of an error in such parametersbeing detected generating a correction signal that may be fed back to a temperature controlsystem to make a correcting adjustment.
    54. A lithographic apparatus as claimed in clause 53 wherein said temperaturecontrol medium is provided only to those regions of said optical element used in imageformation 55. A metrology system comprising: a metrology frame connected to a reference; and an encoder connected to a moveable item and constructed and arranged tomeasure a relative position of the encoder with respect to a reference grid, wherein thereference grid is provided directly on a surface of the metrology frame.
    56. The metrology system according to clause 55, wherein the metrology frame isprovided with channels for providing a temperature control medium to the metrology frame.
    57. The metrology system according to clause 56, wherein the medium is a twophase medium and the channel functions as a heat pipe.
    58. The metrology system according to clause 57, wherein the two phase mediumis carbon dioxide.
    59. The metrology system according to clause 56, wherein the channels areprovided near the surface of the metrology frame.
    60. The metrology system according to clause 56, wherein the channels aregrouped together in channel groups, each group provided with its own temperature controlsystem.
    61. The metrology system according to clause 55, wherein the metrology frame isprovided with a deformation measurement system for measuring a deformation of themetrology frame.
    62. The metrology system according to clause 61, wherein the deformationmeasurement system further comprises a capacitive sensor comprising a first electrodeprovided to a first portion of the metrology frame and a second electrode to a second portionof the metrology frame, wherein the capacitive sensor determines a displacement between theelectrodes to determine the deformation of the metrology frame.
    63. The metrology system according to clause 61, wherein the deformationmeasurement system is provided with an interferometer for measuring a deformation of themetrology frame.
    64. The metrology system according to clauses 61, wherein the apparatus furthercomprises a deformation controller operably connected to the deformation measurementsystem, wherein the temperature control system is a pressure control systemconstructed and programmed to adjust a pressure of the two phase medium in a group ofchannels such as to adjust a temperature of the group of channels as a function of themeasured deformation by the deformation measurement system.
    65. The metrology system according to clause 55, wherein the metrology framecomprises a metal.
    66. The metrology system according to clause 55, wherein the reference grid isetched in the metrology frame.
    67. The metrology system according to clause 66, wherein the metrology frame isprovided with a protective layer on top of the reference grid.
    68. The metrology system according to clause 55, wherein the moveable item is asubstrate table, the reference position is a projection system and the metrology system is usedto measure a position of the substrate table with respect to the projection system.
    69. A device manufacturing method that transfers a pattern from a patterningdevice onto a substrate provided to a substrate table via a projection system of a metrologysystem, the apparatus comprising a metrology system provided with a metrology frameconnected to at least a part of the projection system, wherein the method comprises: measuring a position of the substrate table with an encoder using a referencegrid provided directly on a surface of the metrology frame; and projecting the pattern on the substrate with the projection system creating the device.
    70. A method for manufacturing a metrology system comprising:providing a frame; providing a reference grid directly on the frame; and, connecting the frame to a reference position of the metrology system so as toprovide a reference grid to a metrology system to measure a position of a substrate table withrespect to the projection system.
    71. The method according to clause 70, wherein the method comprises providing aprotective layer on the reference grid on the frame.
    72. A lithographic apparatus component wherein said component is provided withchannels for providing a temperature control medium to the component.
    73 The apparatus of clause 72, wherein the medium is a two phase medium and the channel functions as a heat pipe.
    74. The apparatus of clause 73, wherein the two phase medium is carbon dioxide.
    75. The apparatus of clause 74, wherein at least some of the channels are providednear to a surface of the component.
    76. The apparatus of clause 72, wherein the channels are provided parallel to a surface of the component.
    77. The apparatus of clause 72, wherein the channels are grouped together inchannel groups, each group being provided with its own temperature control system.
    78. The apparatus of clause 72, wherein said apparatus is provided with adeformation measurement system.
    79. The apparatus of clause 76, wherein the deformation measurement systemcomprises: a capacitive sensor comprising a first electrode provided to a first portion ofthe apparatus frame and a second electrode to a second portion of the apparatus, wherein the capacitive sensor determines a displacement between theelectrodes to determine the deformation of the apparatus.
    80. The apparatus of clause 76, wherein the deformation measurement system isprovided with an interferometer for measuring a deformation of the metrology frame 81. The apparatus of clause 76, wherein the apparatus is provided with adeformation controller operably connected to the deformation measurement system and thetemperature control system is a pressure control system constructed and programmed toadjust a pressure of the two phase medium in a group of channels such as to adjust atemperature of the group of channels as a function of the measured deformation by thedeformation measurement system.
    82. The apparatus of clause 76, wherein the component is formed of a metal.
    83. The apparatus of clause 72, wherein the component is an optical element.
    84. The apparatus of clause 83 wherein said temperature control medium isprovided only to those regions of said optical element used in image formation 85. The apparatus of clause 83, wherein the optical element is a mirror.
    86. The apparatus of clause 85, wherein the temperature control medium issupplied at different temperatures to respective channels to cause a controlled deformation ofsaid mirror.
    87. The apparatus of clause 72, wherein deformation of an optical element may bedetermined indirectly by determining optical parameters of an image and in the event of anerror in such parameters being detected generating a correction signal that may be fed back toa temperature control system to make a correcting adjustment.
    88. The apparatus of clause 72, further comprising a 1 + n (n being an integer)two-phase fluid pressure control loops whereby deformation of the mirror is controlled with ndegrees of freedom.
    89. The apparatus of clause 87, wherein said component is an optical element andwherein deformation of an optical element may be determined indirectly by determiningoptical parameters of an image, and in the event of an error in such parameters beingdetected, generating a correction signal that is provided to a temperature control system tomake a temperature correcting adjustment.
    权利要求:
    Claims (1)
    [1]
    A lithography device comprising: an illumination device adapted to provide a radiation beam, a support constructed to support a patterning device, which patterning device is capable of applying a pattern in a cross-section of radiation beam to form a patterned radiation beam; to support a substrate; and a projection device adapted to project the patterned radiation beam onto a target area of the substrate, characterized in that the substrate table is adapted to position the target area of the substrate in a focal plane of the projecting device.
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    法律状态:
    2014-04-02| WDAP| Patent application withdrawn|Effective date: 20140129 |
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    US201261592243P| true| 2012-01-30|2012-01-30|
    US201261592243|2012-01-30|
    US201261652924P| true| 2012-05-30|2012-05-30|
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    US201261710288P| true| 2012-10-05|2012-10-05|
    US201261710288|2012-10-05|
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