• 专利附录
  • 专利说明
  • 权利要求
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    • 专利摘要:
    PURPOSE: A method for depositing a thin film using an aluminum compound is provided to improve uniformity of thickness of a wafer and enhance the purity of the wafer by using the flow on ozone. CONSTITUTION: A wafer is loaded on a wafer block. An Al2O3 layer is deposited on the wafer by injecting alternately the first reaction gas and the second reaction gas on the wafer. A process for depositing the Al2O3 layer includes an ozone feeding process, an ozone fuzzy process, a TMA(Tri-Methyl Aluminum) feeding process, and a TMA fuzzy process. The ozone feeding process is performed to inject ozone gas as the first reaction gas and the insert gas into the first injection hole and the second injection hole, respectively. The ozone fuzzy process is performed to inject the different inert gases into the first injection hole and the second injection hole, respectively. The TMA feeding process is performed to inject the TMA gas as the second reaction gas and the inert gas into the second injection hole and the first injection hole, respectively. The TMA fuzzy process is performed to inject the carrier gas and the inert gas into the second injection hole and the first injection hole, respectively.
    公开号:KR20040043921A
    申请号:KR1020020072380
    申请日:2002-11-20
    公开日:2004-05-27
    发明作者:박영훈；안철현；임홍주；이상규；배장호
    申请人:주식회사 아이피에스；
    IPC主号:
    专利说明:

    Method for depositing thin film on wafer using Aluminum compound
    [16] The present invention relates to a thin film deposition method, and more particularly, to a thin film deposition method using an aluminum compound for depositing an aluminum oxide film on a substrate using ozone and TMA (TriMethylAluminum).
    [17] Deposition of the aluminum oxide film is carried out in atomic layer units through an ALD process that alternately feeds and purges ozone and TMA into a reaction vessel containing a substrate such as a wafer. Application number 1999-058541. In depositing the aluminum oxide film, the aluminum oxide film deposited on the substrate in order to increase the yield or quality of the semiconductor device should have a more uniform thickness and good purity. Therefore, various studies have been made to find various process conditions that can realize better thickness uniformity and purity.
    [18] SUMMARY OF THE INVENTION The present invention has been made to reflect the above requirements, and an object of the present invention is to provide a thin film deposition method using an aluminum compound which can further improve the thickness uniformity and electrical properties of the aluminum oxide film deposited on the substrate.
    [1] 1 is a block diagram of a thin film deposition apparatus performing a thin film deposition method of the present invention,
    [2] 2 is a graph showing an embodiment of a thin film deposition method using the thin film deposition apparatus of FIG.
    [3] 3 is a graph showing the deposition linearity of a thin film in the thin film deposition method of the present invention,
    [4] Figure 4 is a thin film deposition method of the present invention, showing the effect of improving the thickness according to the flow rate of ozone.
    [5] 5 is a graph showing another embodiment of a thin film deposition method using the thin film deposition apparatus of FIG.
    [6] <Description of the symbols for the main parts of the drawings>
    [7] 10 ... reactor vessel 12 ... reactor block
    [8] 13 ... Top lid 14 ... Showerhead
    [9] 14a ... first injection hole 14b ... second injection hole
    [10] 14 d ... gas curtain hole 15 ... wafer block
    [11] 20 ... gas supply part 200 ... first gas line
    [12] 210 ... first reaction gas supply unit 220 ... ozone purge gas supply unit
    [13] 300 ... second gas line 310 ... second reaction gas supply unit
    [14] 320 ... main purge gas supply unit 400 ... curtain gas line
    [15] 410 ... gas curtain part 500 ... exhaust line
    [19] In order to achieve the above object, a thin film deposition method using an aluminum compound according to the present invention, the reactor block 12, the wafer block 15 is embedded; A top lead 13 covering the reactor block 12 to maintain a predetermined pressure; A plurality of first injection holes 14a which are installed below the top lid 13 and inject the first reaction gas flowing from the gas supply unit 20 into the upper portion of the substrate w, and the gas supply unit. By using the reaction vessel 10 including a; shower head 14 is formed with a plurality of second injection holes (14b) for injecting a second reaction gas flowing from the 20 to the upper portion of the substrate (w) In order to deposit an aluminum oxide film (Al 2 O 3 ) on the substrate (w), the substrate is seated to seat the substrate (w) on the wafer block 15 is set temperature so that the temperature of the substrate can be maintained at least 250 ℃ or more Step S1; ALD thin film deposition step (S2) of depositing an Al 2 O 3 thin film by alternately spraying a first reaction gas and a second reaction gas on the substrate (w). The ALD thin film deposition step (S2), by spraying the first reaction gas ozone having a concentration of at least 100g / cm 3 or more and a flow rate of 50sccm or more and 1000sccm or less through the first injection hole (14a), and at the same time the second injection An ozone feeding step S1 for injecting an inert gas having a flow rate of 50 sccm or more and 1000 sccm or less through the holes 14b; The supply of the ozone is stopped and an inert gas having a flow rate of 50 sccm or more and 1000 sccm or less through the first injection holes 14a is injected into the first injection holes 14a, and at the same time in the ozone feeding step S1. An ozone purge step (S2) of spraying the same inert gas through the second injection holes (14b); TMA, which is a second reaction gas transferred by a carrier gas having a flow rate of 50 sccm or more and 1000 sccm or less, is injected through the second injection holes 14b, and at the same time, 50 sccm or more and 1000 sccm or less are injected into the first injection holes 14a. TMA feeding step (S3) for injecting an inert gas having a flow amount; The supply of the TMA is stopped and the same carrier gas as in the TMA feeding step S3 is injected through the second injection hole 14b, and at the same time, the same inert gas as in the TMA feeding step S3 is used. AMA cycle consisting of a TMA purge step (S4) to be injected into the first injection hole (14a); performs at least two or more times, the ozone feeding, purge step (S1) (S2), 0.1 seconds to 4 seconds It is set in the range, characterized in that the TMA feeding, purge step (S3) (S4) is set in the range of 0.1 seconds to 3 seconds.
    [20] At this time, gas curtain holes 14d for injecting the inert gas flowing into the shower head 14 to the outer circumferential side (inner wall of the reactor block) of the substrate w are formed, and the ALD thin film deposition step is performed. At least 50 sccm or more of inert gas is preferably injected to the outer circumferential side of the substrate w through the gas curtain hole 14d.
    [21] On the other hand, the vacuum purge step by blocking the flow of all the gas flowing into the reaction vessel 10 is selectively performed at any boundary between all the steps (S1, S2, S3, S4) in the ALD cycle It may be set within the range of 0.1 second to 4 seconds.
    [22] Hereinafter, a thin film deposition method using an aluminum compound according to the present invention will be described in detail with reference to the accompanying drawings.
    [23] 1 is a block diagram of a thin film deposition apparatus for performing the thin film deposition method of the present invention, Figure 2 is a diagram showing an embodiment of a thin film deposition method using the thin film deposition apparatus of FIG. Referring to the drawings, a thin film deposition apparatus implementing a thin film deposition method using an aluminum compound includes a reaction vessel 10 in which at least one wafer or glass substrate w is accommodated, and a reaction gas for supplying a reaction gas to the reaction vessel. It includes a gas supply unit 20.
    [24] The reaction vessel 10 includes a reactor block 12 having a wafer block 15 on which at least one wafer or a substrate such as glass is mounted, and a reactor block 12 so as to maintain a predetermined pressure. The top lead 13 and the plurality of first injection holes 14a which are installed below the top lead 13 and inject the first reaction gas flowing into the upper portion of the substrate w, and the second flowing inflow A plurality of second injection holes (14b) for injecting the reaction gas to the upper portion of the substrate (w) and the curtain gas (inert gas) flowing into the outer peripheral side (inner wall of the reactor block) of the substrate (w) The shower head 14 includes a plurality of gas curtain holes 14d formed therein.
    [25] The gas supply unit 20 may include a first reaction gas supply unit 210 for supplying ozone (0 3 ), which is the first reaction gas, to the first gas line 200 connected to the first injection hole 14a, and the first reaction gas supply unit 210. The second reaction to the ozone purge gas supply unit 220 for supplying ozone purge gas (inert gas) for purging ozone to the gas line 200 and the second gas line 300 connected to the second injection hole 14b. A second reaction gas supply unit 310 for supplying a TMA (TriMethylAluminum) gas, a main purge gas supply unit 320 for supplying a main purge gas (inert gas) to the second gas line 300, and a gas curtain And a curtain gas supply unit 410 for supplying curtain gas (inert gas) for forming a gas curtain on the inner wall of the reactor block 12 to the curtain gas line 400 connected to the hole 14d.
    [26] And a first reaction gas supply portion 210, ozone (0 3) to generate the ozone generating unit 211, ozone MFC (212) for controlling the flow rate of the ozone generated in the ozone generating unit 211, ozone MFC An ozone feeding valve V4 for turning on / off the flow of ozone from the second gas line 200 to the first gas line 200, and from the ozone MFC 212 to the exhaust line 500 without passing through the reaction vessel 10. And ozone feeding bypass valve V5 for turning on / off the flow of ozone. The ozone generating unit 211 has an ozone generator 211a for generating ozone from oxygen (O 2 ) and nitrogen (N 2 ) flowing through the MFC and the valves (V1) (V2), and the ozone generating unit (211). Ozone generated excessively from) is exhausted through the ozone bypass valve V3 and then through the ozone remover 214 to the atmosphere.
    [27] The ozone purge gas supply unit 220 controls ozone purge gas MFC 222 that controls the flow rate of the introduced ozone purge gas (inert gas), and ozone from the ozone purge gas MFC 222 to the first gas line 200. The ozone purge valve V6 for turning on / off the flow of purge gas and the flow of ozone purge gas from the ozone purge gas MFC 222 to the exhaust line 500 without passing through the reaction vessel 10. And an ozone purge bypass valve V7.
    [28] The second reaction gas supply unit 310 is a liquid raw material bubbling machine, which controls the flow rate of the canister 311 containing TMA, which is a liquid raw material of the second reaction gas, and the carrier gas (inert gas) flowing into the canister 311. The carrier gas MFC 312, the TMA feed valve V9 for turning on / off the flow of the TMA gas from the canister 311 to the second gas line 300, and the reaction vessel 10 at the canister 311. The TMA bypass valve V10 for turning on / off the flow of the TMA gas to the exhaust line 500 without passing through the gas, and the carrier gas via the carrier gas MFC 312 directly flow to the second gas line 300. It includes a canister bypass valve (V11) for. Valves V12 and V13 are installed between the carrier gas MFC 312 and the canister 311, and between the canister 311 and the second gas line 300, respectively, and the valves V12 and V13 and the canister ( Three valves 311 are provided with manual valves M1, M2 and M3.
    [29] The main purge gas supply unit 320 includes a main purge gas MFC 322 for controlling the flow amount of the main purge gas (inert gas) introduced thereto, and a main purge gas MFC 322 from the main gas to the second gas line 300. The main purge valve V14 for turning on / off the flow of purge gas and the flow of main purge gas from the main purge gas MFC 322 to the exhaust line 500 without passing through the reaction vessel 10. And a main purge bypass valve V15.
    [30] The curtain gas supply unit 410 turns on the curtain gas MFC 412 for controlling the flow amount of the curtain gas (inert gas) and the curtain gas flow from the curtain gas MFC 412 to the curtain gas line 400. Curtain gas valve (V17) to turn on / off, and curtain gas bypass valve (V18) to turn on / off the flow of curtain gas from the curtain gas (MFC) 412 to the exhaust line (500) without passing through the reaction vessel (10). ).
    [31] Here, the flow rate control of the gas is performed through the MFC, but this is only an embodiment, and the flow rate may be controlled through the needle valve.
    [32] Next, a thin film deposition method of depositing an Al 2 O 3 thin film on a substrate using the thin film deposition apparatus will be described.
    [33] In order to deposit an Al 2 O 3 thin film on the substrate w by using an aluminum compound, a substrate deposition step S1 for depositing the substrate w on the wafer block 15 and Al 2 O 3 thin film deposition are performed. And a thin film deposition step (S2) of depositing a thin film by spraying the reaction gases on the substrate (w).
    [34] Substrate seating step (S1) is made by the robot arm (not shown) to take out the substrate from the transfer module (not shown) to flow into the reaction vessel 10 and seated on the wafer block 15, in this step the substrate Preheating of (w) takes place together. The substrate is heated to at least 250 ° C. by the wafer block 15. The substrate used in this embodiment is a wafer having a 300 mm diameter.
    [35] The thin film deposition step S2 is performed by repeatedly performing the ALD cycle consisting of an ozone feeding step S1 → an ozone purge step S2 → a TMA feeding step S3 → a TMA purge step S4 one or more times. This will be described in detail as follows.
    [36] In the ozone feeding step S1, the ozone controlled by the ozone MFC 212 at a predetermined flow amount is supplied to the substrate w through the ozone feeding valve V4 → the first gas line 200 → the first injection hole 14a. The main purge gas (inert gas) which is injected into the phase and controlled at a predetermined flow rate by the main purge gas MFC 322 at the main purge valve V14 → the second gas line 300 → the second injection hole 14b. ) Is sprayed onto the substrate (w). At this time, ozone has a concentration of 100 g / cm 3 or more and a flow rate of 50 sccm or more and 1000 sccm or less, and the main purge gas has a flow rate of 50 sccm or more and 1000 sccm or less. In this embodiment, the ozone and the main purge gas each has a flow rate of 300 sccm.
    [37] The ozone purge step S2 stops the supply of ozone and replaces the ozone purge gas (inert gas) controlled by the ozone purge gas MFC 222 with a predetermined flow rate. The ozone purge valve V6 → the first gas line 200 → injection into the reaction vessel 10 through the first injection holes 14a, and at the same time, the same main purge gas as in the ozone feeding step S1 is injected onto the substrate w through the second injection holes 14b. It's a step. At this time, the ozone purge gas has a flow amount of 50sccm or more and 1000sccm or less. In this embodiment, the ozone purge gas has a flow rate of 300 sccm.
    [38] In the TMA feeding step S3, after the carrier gas (inert gas) controlled by the carrier gas MFC 312 is passed through the canister 311, the TMA gas transferred by the carrier gas is TMA fed. The valve V9 → the second gas line 300 → the second injection holes 14b are sprayed onto the substrate w, and at the same time, the ozone purge gas is injected to the first injection holes 14a. At this time, the carrier gas has a flow rate of 50sccm or more and 1000sccm or less, and the ozone purge gas has a flow rate of 50sccm or more and 1000sccm or less. In this embodiment, the carrier gas has a flow rate of 300 sccm, and the ozone purge gas also has a flow rate of 300 sccm.
    [39] In the TMA purge step S4, the supply of the TMA is stopped and the same carrier gas as in the TMA feeding step S3 is injected through the second injection holes 14b without passing through the canister 311, and at the same time, the TMA feeding step The same ozone purge gas as in S3 is injected through the first injection holes 14a.
    [40] While the thin film deposition is in progress, the curtain gas (inert gas) controlled by the predetermined amount of flow by the curtain gas MFC 412 passes through the curtain gas valve V17 → curtain gas line 400 → gas curtain holes 14d. It is preferable to spray to the outer circumferential side of the substrate w. At this time, the curtain gas to have a flow rate of 50sccm or more, in this embodiment to have a flow rate of 450 sccm. The curtain gas forms a gas curtain inside the reaction vessel, and by forming the gas curtain, it is possible to minimize the deposition of the thin film on the inner wall surface of the reaction vessel and thus increase the cleaning period of the reaction vessel.
    [41] In addition, ozone feeding, purge step (S1) (S2) is continued for a time within 0.1 seconds to 4 seconds, respectively. The ozone feeding step S1 of this embodiment was set to 2 seconds, and the ozone purging step S2 was set to 4 seconds. In addition, the TMA feeding and purging steps S3 and S4 were set within the range of 0.1 second to 3 seconds. The TMA feeding (S3) of this example was 0.2 seconds, and the TMA purge (S4) was 1 second.
    [42] As described above, in the thin film deposition step S2, the ozone feeding step S1, the ozone purging step S2, the TMA feeding step S3, and the TMA purging step S4 form one ALD cycle. One cycle is repeated until the desired oxide thickness is obtained.
    [43] Figure 3 shows the thickness linearity in the condition recipe to flow a large amount of ozone in the thin film deposition method of the present invention. The flow rate of ozone used at this time was 670 sccm. In spite of this much ozone flow, it can be seen that the thickness linear controllability is not inferior to the process conditions of the flow of ozone below 500 sccm in the past.
    [44] 4 is a view showing a thickness improvement effect when the flow rate of ozone is increased in the state of maintaining all other process factors in the ALD thin film deposition method of the present invention. Here, the flow rate of ozone is compared with that of 300 sccm and 670 sccm. To obtain the above data, a film was deposited on the substrate through approximately 78 ALD cycles and the thickness of the thin film at any 13 points was then measured.
    [45] As shown in the figure, the average value of the thickness obtained at any 13 point at 300 sccm was 64.9 mm 3, wherein the difference between the highest and the lowest thickness was 3.3 mm 3. On the other hand, at 670 sccm, the average value of the thickness obtained at the 13 point was 61.7 mm 3, and the difference between the maximum thickness and the maximum thickness was 0.61 mm 3.
    [46] From the above data, it can be seen that the average thickness of the thin film when the flow rate of ozone is 670 sccm (61.7 kPa) is slightly smaller than the average thickness of the thin film (64.9 kPa) when 300 sccm. However, the difference in thickness was 0.61 mmW at 670 sccm, and 3.3 mmW at 300 sccm, which was small when more ozone was flowed. This demonstrates that by significantly increasing the ozone flow rate, the improvement in thickness uniformity is more dominant than in any other correction.
    [47] 5 is a diagram illustrating another embodiment of a thin film deposition method using the thin film deposition apparatus of FIG. 1, and FIG. 5 illustrates a thin film deposition process using a vacuum purge.
    [48] In the state where ozone is generated in the first reaction gas supply unit 210, all valves in the gas supply unit 20 except for the valves V1 and V2 of the ozone bypass valve V3 and the ozone generating unit 211 are closed. Perform a vacuum purge step. The vacuum purge step is selectively performed at any boundary between the ozone feeding step (S1), the ozone purging step (S2), the TMA feeding step (S3), and the TMA purge step (S4). In this embodiment, it is performed at the boundary between the ozone purge step (S2) and the TMA feeding step (S3). In this case, the thin film deposition process proceeds in the order of ozone feeding (S1) → ozone purge (S2) → vacuum purge (V.P) → TMA feeding (S3) → TMA purge (S4) → vacuum purge (V.P). This is in contrast to a thin film deposition method using only an inert gas consisting of ozone feeding → ozone purge → TMA feeding → TMA purge.
    [49] When vacuum purging, not only the last valves on the gas lines connected to the reaction vessel but also all the valves except the first valve V1, the second valve V2, and the ozone bypass valve V3 are closed. The flow of all the gas flowing into the (10). This is to prevent flow fluctuation due to local gas pressure accumulation when the reaction gas flow through the gas line is resumed. Opening the ozone bypass valve (V3) is because it is more advantageous to reduce the fluctuation of ozone flow to the reaction vessel. At this time, the vacuum purge is set in the range of 0.1 seconds to 4 seconds, in this embodiment it was set to 1 second.
    [50] In this embodiment, the reaction vessel may be a side flow type or may be a showerhead type. The use of the vacuum purge can be more effective in the shower head type, and the effect is shown in step coverage, thin film purity, and thickness control linearity. This is because the volume of the reaction chamber deposition chamber of the conventional showerhead type is larger than that of the reaction vessel of the side flow type.
    [51] With proper vacuum purge, purge efficiency can be higher than with inert gas alone. To this end, in the showerhead type, the ozone first sprayed before the TMA gas injection must be quickly purged on the substrate as well as in the volume inside the showerhead. Only then can the gas phase reaction be eliminated as much as possible and only a saturated surface reaction can occur on the substrate.
    [52] In fact, when TMA gas is injected onto a substrate, ozone is not only adsorbed on the substrate surface but still exists in the space on the substrate and in the volume inside the showerhead. Therefore, an additional vacuum purge is used to draw out unnecessary reaction gas to the exhaust line more cleanly and efficiently before the next reaction gas inlet.
    [53] On the other hand, it is necessary to purge the reaction gas with the introduction of the purge gas rather than vacuum purging the reaction gas only by considering the purge efficiency. This is because factors such as the uniformity of the thin film thickness and the composition control of the thin film must be taken into consideration.
    [54] As described above, according to the ALD thin film deposition method according to the present invention, by using the flow rate of the ozone has the effect that it is possible to deposit an aluminum oxide film with excellent thickness uniformity and purity on the substrate.
    权利要求:
    Claims (4)
    [1" claim-type="Currently amended] A reactor block 12 in which the wafer block 15 is embedded; A top lead 13 covering the reactor block 12 to maintain a predetermined pressure; A plurality of first injection holes 14a which are installed below the top lid 13 and inject the first reaction gas flowing from the gas supply unit 20 into the upper portion of the substrate w, and the gas supply unit. By using the reaction vessel 10 including a; shower head 14 is formed with a plurality of second injection holes (14b) for injecting a second reaction gas flowing from the 20 to the upper portion of the substrate (w) In order to deposit an aluminum oxide film (Al 2 O 3 ) on the substrate (w),
    A substrate seating step (S1) for seating the substrate (w) on the wafer block (15) having a temperature set such that the temperature of the substrate can be maintained at least 250 deg. ALD thin film deposition step (S2) of depositing an Al 2 O 3 thin film by alternately spraying a first reaction gas and a second reaction gas on the substrate (w), the ALD thin film deposition step (S2) Is,
    Injecting ozone, which is a first reaction gas having a concentration of at least 100 g / cm 3 or more and a flow rate of 50 sccm or more and 1000 sccm or less through the first injection holes 14a, and at the same time, 50 sccm or more and 1000 sccm or less through the second injection holes 14b. An ozone feeding step (S1) for injecting an inert gas having a flow rate of the;
    The supply of the ozone is stopped and an inert gas having a flow rate of 50 sccm or more and 1000 sccm or less through the first injection holes 14a is injected into the first injection holes 14a, and at the same time in the ozone feeding step S1. An ozone purge step (S2) of spraying the same inert gas through the second injection holes (14b);
    TMA, which is a second reaction gas transferred by a carrier gas having a flow rate of 50 sccm or more and 1000 sccm or less, is injected through the second injection holes 14b, and at the same time, 50 sccm or more and 1000 sccm or less are injected into the first injection holes 14a. TMA feeding step (S3) for injecting an inert gas having a flow amount;
    The supply of the TMA is stopped and the same carrier gas as in the TMA feeding step S3 is injected through the second injection hole 14b, and at the same time, the same inert gas as in the TMA feeding step S3 is used. At least two or more ALD cycles consisting of; TMA purge step (S4) for spraying to the first injection hole (14a),
    The ozone feeding and purging step S1 and S2 are set within a range of 0.1 seconds to 4 seconds, and the TMA feeding and purging step S3 is set within a range of 0.1 seconds to 3 seconds. Thin film deposition method using an aluminum compound.
    [2" claim-type="Currently amended] The method of claim 1,
    Gas curtain holes 14d for injecting inert gas flowing into the shower head 14 to the outer circumferential side (inner wall of the reactor block) of the substrate w are formed.
    And at least 50 sccm of inert gas is injected through the gas curtain hole (14d) to the outer circumferential side of the substrate (w) during the ALD thin film deposition step.
    [3" claim-type="Currently amended] The method according to claim 1 or 2,
    The canister for supplying the TMA is maintained at 25 ℃ to 40 ℃, the thin film deposition method using an aluminum compound, characterized in that having a volume of 500 cc to 3000 cc or less.
    [4" claim-type="Currently amended] The method according to claim 1 or 2,
    A vacuum purge step is performed at the boundary between all the steps S1, S2, S3, S4 in the ALD cycle, by blocking the flow of all the gas flowing into the reaction vessel 10, and 0.1 Thin film deposition method using an aluminum compound, characterized in that set within the range of seconds to 4 seconds.
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    同族专利:
    公开号 | 公开日
    KR100520902B1|2005-10-12|
    US20040101622A1|2004-05-27|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-11-20|Application filed by 주식회사 아이피에스
    2002-11-20|Priority to KR10-2002-0072380A
    2004-05-27|Publication of KR20040043921A
    2005-10-12|Application granted
    2005-10-12|Publication of KR100520902B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR10-2002-0072380A|KR100520902B1|2002-11-20|2002-11-20|Method for depositing thin film on wafer using Aluminum compound|
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