Etching apparatus for manufacturing semiconductor devices

专利摘要:
PURPOSE: An etcher for fabricating a semiconductor device is provided to smoothly supply heat transfer gas for uniformly distributing the heat in a wafer by making the first block of a nozzle part include a plurality of gas supply paths. CONSTITUTION: An etch process is performed in a chamber(100). A chuck is located inside the chamber. A substrate is placed on the chuck having a groove on its upper surface. The nozzle part(200) supplies gas to a space between the lower surface of the substrate and the groove to make the temperature of the substrate placed on the chuck uniform. The nozzle part includes a curved gas supply path to minimize the induction of the process byproducts in the chamber into the gas supply path.
公开号:KR20040036778A
申请号:KR1020020065113
申请日:2002-10-24
公开日:2004-05-03
发明作者:이중모
申请人:삼성전자주식회사；
IPC主号:

专利说明:

Etching device for semiconductor device manufacturing {ETCHING APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES}
[12] The present invention relates to an apparatus for manufacturing a semiconductor device, and more particularly, to an etching apparatus for etching a predetermined film formed on a wafer.
[13] In general, a plurality of films such as a polycrystalline film, an oxide film, a nitride film, a metal film, and the like are formed on a wafer used as a semiconductor substrate in a semiconductor device manufacturing process. A photoresist is coated on the film and the pattern drawn on the photomask is transferred to the photoresist by the exposure process. After the photoresist is selectively removed to form a pattern on the photoresist, the photoresist is used as a mask, followed by an etching process to form the same pattern as the pattern formed on the photoresist on the wafer.
[14] In performing the etching process, recently, an etching method using plasma generated by applying high frequency power to the reaction gas is mainly used. In this way, the plasma is denser at the center of the wafer than at the edge of the wafer and the center of the wafer is heated more than the edge. Helium gas is supplied to the lower surface of the wafer to transfer hot heat from the center portion to the edge portion. A general etching apparatus includes a nozzle unit having a gas supply path formed at the center as a passage for supplying helium gas, which has the following problems.
[15] After the process proceeds, there are residual reaction gases or by-products in the chamber, and these reaction gases or by-products are introduced into the gas supply path and deposited therein. This may result in a poor flow of helium gas supplied in a subsequent process, resulting in the wafer not having a uniform temperature as a whole.
[16] In addition, it is difficult to remove the by-products deposited because the gas supply line is long, the entire nozzle portion must be replaced, thereby increasing the equipment maintenance cost.
[17] An object of the present invention is to provide an etching apparatus having a nozzle unit capable of smoothly supplying heat transfer gas for uniformly distributing heat in a wafer.
[18] In addition, an object of the present invention is to provide an etching apparatus having a nozzle unit that can easily remove the reaction by-products deposited on the nozzle unit.
[1] 1 is a schematic cross-sectional view showing an etching apparatus of the present invention;
[2] 2 is a plan view of the electrostatic chuck of FIG. 1;
[3] 3 is a partial sectional view showing a first preferred embodiment of the nozzle part of FIG. 1;
[4] 4 to 6 show cross-sections cut along lines I-I, II-II and III-III of FIG. 3, respectively; and
[5] 7 is a cross-sectional view showing a modification of the nozzle unit.
[6] Explanation of symbols on the main parts of the drawings
[7] 100: process chamber 120: etching gas injection unit
[8] 140: electrostatic chuck 200: nozzle unit
[9] 300 housing 410 first block
[10] 420: second block 430: third block
[11] 434, 444, 446: gas inlet space 440: fourth block
[19] In order to achieve the above object, the etching apparatus of the present invention is a chamber for performing an etching process, a chuck in which the substrate is placed and placed in the chamber, and a groove is formed in the upper surface, and the temperature of the substrate placed in the chuck. A nozzle portion for supplying gas to a space formed between the lower surface of the substrate and the groove for uniformity, wherein the nozzle portion is a curved gas to minimize inflow of process by-products in the chamber into the gas supply passage A supply path is provided.
[20] According to a first embodiment of the nozzle unit of the present invention, the nozzle unit includes a housing and a first block inserted into the housing and having a groove formed in a helical shape on a side thereof, and the curved gas supply path includes the groove and the Formed by the housing.
[21] In addition, it is preferable that there are a plurality of spiral grooves formed in the first block.
[22] The nozzle unit is positioned below the first block, and includes a second block having a straight gas supply path, a gas inflow space for collecting the gas in an upper portion or a lower portion thereof, and below the second block. And a third block which is positioned and is formed with a plurality of holes, which are straight gas supply passages, and a gas inflow space for collecting the gas in an upper portion or a lower portion thereof.
[23] Preferably, the total cross-sectional area of the grooves or the holes formed in the first to third blocks is wider as it is positioned above.
[24] Preferably the housing is made of Teflon or ceramic for insulation.
[25] According to another embodiment of the nozzle unit, the nozzle block is a first block formed inside the gas flow path in the form of a wave, the second block is located below the first block, a straight gas supply passage is formed, A third block formed under the second block and formed with a plurality of holes, which are straight gas supply paths, and a fourth block formed under the third block and formed with a hole, which is a movement space of the gas in a wave form; do.
[26] Preferably, the first block to the fourth block may be separated and combined, respectively, and each of the blocks may have a gas inflow space so that the gas is supplied to the grooves or holes formed in the blocks.
[27] Hereinafter, an embodiment of the present invention will be described in more detail with reference to FIGS. 1 and 7. In the drawings, the same reference numerals are given to components that perform the same function.
[28] The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings are exaggerated to emphasize a clearer description.
[29] 1 is a cross-sectional view schematically showing an etching apparatus of the present invention.
[30] Referring to FIG. 1, the etching apparatus of the present invention includes a process chamber 100, an etching gas spraying port 120, an electrostatic chuck 140, and a nozzle unit. Portion (200).
[31] The process chamber 100 is a chamber that provides a space in which an etching process is performed, and a shield ring 150 is installed on a sidewall of the process chamber 100. The shield ring 150 is to prevent polymers generated during the process from being attached to the inner wall of the process chamber 100. An exhaust line is formed on the bottom of the process chamber 100 to exhaust the reaction gas or the reaction by-products to the outside.
[32] The etching gas injection unit 110 serving as an upper electrode is positioned at an upper portion of the process chamber 100. The etching gas injection unit 110 is coupled to the upper surface of the process chamber 100 by a predetermined distance, and a gas introduction unit 110 is provided therebetween. The gas introduction unit 110 is a space in which the etching gas is first introduced into the process chamber 100 from an external etching gas supply source (not shown).
[33] In the lower portion of the process chamber 100, the electrostatic chuck 140 serving as a lower electrode and on which the wafer W is placed is positioned. The electrostatic chuck 140 is positioned to face the etching gas injection unit 110.
[34] A high frequency power supply 500 is connected to the etching gas injector 110, and the high frequency power is interposed between the etching gas injector 110 serving as the upper electrode and the electrostatic chuck 140 serving as the lower electrode. Is applied to form a plasma therebetween. A plurality of injection holes 122 are formed in the etching gas injection unit 110, so that the etching gas introduced into the gas introduction unit 110 is formed on the electrostatic chuck 140 through the injection holes 122. It is supplied to the wafer placed in the. .
[35] During the etching process, the plasma is more concentrated at the center of the wafer than at the edge of the wafer. As a result, the wafer may not maintain an overall uniform temperature. The etching apparatus includes the nozzle unit 200 for supplying a heat transfer gas that transfers heat from the center portion of the wafer to the edge. As shown in FIG. 2, an injection hole for injecting heat transfer gas provided through the nozzle unit 200 is formed in the center of the electrostatic chuck 140, and a plurality of grooves are formed in an upper surface of the electrostatic chuck 140. . The grooves are provided to provide a passage through which the heat transfer gas moves when the wafer is placed on the electrostatic chuck 140. It is preferable to use light helium gas as the heat transfer gas, and the helium gas is supplied to the nozzle unit through a gas line from an external gas storage unit.
[36] 3 is a partial cross-sectional view showing a first embodiment of the nozzle unit of the present invention, Figures 4 to 6 are views showing a cross section taken along the line I-I, line II-II, line III-III of Figure 3, respectively. to be.
[37] Referring to FIG. 3, the nozzle unit 200 includes a housing 300 and a first block 410 and a second inserted into the housing 300 and providing a space in which gas moves. A second block 420, a third block 430, and a fourth block 440 are provided.
[38] As shown in FIGS. 3 and 4, the first block 410 has a cylindrical shape, and a plurality of grooves 412 are formed on a side surface thereof. The plurality of grooves 412 and the housing 300 form a gas supply path 412 ′, which is a passage through which the helium gas is moved.
[39] After the etching process is completed and the wafer is unloaded from the electrostatic chuck 140, the polymer generated during the process is introduced into the gas supply path 412 and deposited. In this case, since the nozzle part of the general etching apparatus has only one straight gas supply path in the center, less helium gas is supplied in the subsequent process than the set amount. However, in the present invention, since the plurality of gas supply passages 412 'are formed in the first block 410, even if a polymer is introduced and deposited into one of the gas supply passages 412', another gas supply passage 412 'is formed. ) Can supply helium gas smoothly.
[40] The gas supply paths 412 ′ formed on the sidewall of the first block 410 are formed in a spiral shape. This is because when the polymers are formed in a straight line, the polymers pass through the gas supply path 412 'in the gas line 620 or in the gas supply path 422' in the second to fourth blocks 420, 430, and 440 to be described later. , 432 ', 442') can be minimized.
[41] A gas inflow space 414 is formed above the first block 410 to store gas for supplying gas supplied through the gas supply paths 412 ′ to an injection hole formed in the chuck.
[42] The longer the spiral gas supply path 412 ′ formed in the first block 410 can reduce the inflow of polymer into the gas line 620, the gas supply paths 422 ′, 422 ′, and 442. ') Is so long that it takes a long time to supply helium gas. Therefore, in the present invention, the first block 410 is shortened, and the second block to the second block having the gas supply paths 422 ', 432' and 442 'which are straight under the first block 410 are provided. Four blocks 420, 430, 440 are inserted.
[43] As shown in FIGS. 3 and 5, the second block 420 is located below the first block 410 and has a straight hole 422 which is a gas supply path 422 'at the center. .
[44] The third block 430 is positioned below the second block 420. A plurality of straight holes 432 are formed in the third block 430, and the holes 432 function as a gas supply path. The fourth block 440 is positioned below the third block 430. The fourth block 440 is formed with a single straight hole 442 in the center.
[45] Gas inflow spaces 424, 434, and 436 are formed in the upper part of the second block 420 and the upper part and the lower part of the third block 430, respectively. The gas inlet spaces 424, 434, and 436 not only function to connect holes of the gas supply paths 422, 432, and 442 so that gas is supplied between the blocks, but also the nozzle unit in the process chamber 100. The polymer introduced into the gas 200 serves to reduce the deposition of the polymer introduced into the gas supply passages 422, 432, and 442.
[46] Positions of the second block 420 and the third block 430 may be changed, and the etching apparatus according to the present invention may include a plurality of the second block 420 and the third block 430. .
[47] The gas supply paths 412 ′, 422 ′, 432 ′, 442 ′ formed in the first to fourth blocks 410, 420, 430, and 440 increase in total cross-sectional area. This is to ensure that the helium gas supplied from below is supplied in the same amount even if the polymer is deposited in the gas supply passage. Preferably, the gas supply passages 412 ', 422', 432 ', and 442' formed in the blocks 410, 420, 430, and 440 have a total cross-sectional area that is increased by about 10% than the blocks located below them. To do that.
[48] In addition, in the present invention, the blocks 410, 420, 430, and 440 may be separated and combined, respectively. This is to facilitate cleaning of the polymers deposited in the gas supply paths 412 ', 422', 432 ', 442' in the blocks 410, 420, 430, 440.
[49] The housing 300 surrounding the blocks is made of an insulating material such as Teflon or ceramic to insulate the inner body 400 from the electrostatic chuck 140 serving as a lower electrode.
[50] 7 is a view showing a modification of the first embodiment. Referring to FIG. 7, the nozzle unit 200 ′ includes a first block 410, a second block 420, a third block 430, and a fourth block 440. Same as the example. However, the first embodiment differs from the first embodiment in that a single groove having a wave shape is formed as a gas supply path inside the first block 410 'and the fourth block 440'. The structure described above has the same effect as the first embodiment in that the polymers are prevented from easily entering into the blocks located below.
[51] The nozzle part is made of an insulating material such as Teflon or ceramic to insulate the blocks from the electrostatic chuck 140 serving as a lower electrode, or as shown in FIG. It may be provided with a housing made of an insulating material.
[52] According to the etching apparatus of the present invention, since the first block of the nozzle unit includes a plurality of gas supply paths, the helium gas may be smoothly supplied through the other gas supply paths even if the polymers in the chamber are deposited in some gas supply paths.
[53] In addition, according to the etching apparatus of the present invention, since the gas supply path formed in the first block of the nozzle unit has a spiral or wave-shaped curve, it is possible to minimize the introduction of polymers into the blocks located below the first block.
[54] Further, according to the etching apparatus of the present invention, since the second to fourth blocks have a straight gas supply path and a gas inflow space, the time for supplying gas is shortened as compared with the case where the entire gas supply path in the nozzle is curved. It can work.
[55] In addition, according to the etching apparatus of the present invention, since each block can be combined and separated, there is an effect that can easily clean the polymer deposited in the gas supply passage.

权利要求:
Claims (12)
[1" claim-type="Currently amended] In the etching apparatus for manufacturing a semiconductor device,
A chamber for performing an etching process;
A chuck positioned within the chamber and in which a substrate is placed and a groove formed in an upper surface thereof;
A nozzle unit for supplying a gas to a space formed between the lower surface of the substrate and the groove so as to equalize the temperature of the substrate placed on the chuck;
And the nozzle unit has a curved gas supply path to minimize the inflow of process by-products in the chamber into the gas supply path.
[2" claim-type="Currently amended] The method of claim 1,
The nozzle unit
A housing;
A first block inserted into the housing and grooved in a helical shape on the side;
The curved gas supply passage is formed by the groove and the housing.
[3" claim-type="Currently amended] The method of claim 2,
Etching apparatus, characterized in that the plurality of grooves formed in the first block helical.
[4" claim-type="Currently amended] The method of claim 3,
The nozzle unit is positioned below the first block, and has one hole formed as a straight gas supply passage, and further comprising a second block having a gas inflow space for collecting the gas in an upper portion or a lower portion thereof. Etching device.
[5" claim-type="Currently amended] The method of claim 4, wherein
The total cross-sectional area of the grooves formed in the first block is larger than the cross-sectional area of the hole formed in the second block.
[6" claim-type="Currently amended] The method of claim 3,
The nozzle unit is positioned below the first block, the plurality of holes are formed in a straight gas supply path, characterized in that further comprising a third block having a gas inlet space for collecting the gas in the upper or lower portion Etching device.
[7" claim-type="Currently amended] The method of claim 6,
The total cross-sectional area of the grooves formed in the first block is larger than the total cross-sectional area of the holes formed in the third block.
[8" claim-type="Currently amended] The method of claim 2,
And the housing is made of Teflon or ceramic for insulation.
[9" claim-type="Currently amended] The method of claim 1,
And the nozzle unit includes a first block in which the gas flow path in a wave form is formed therein.
[10" claim-type="Currently amended] The method of claim 9,
The second block is located below the first block, the second block is coupled to and separated from the first block, and a straight gas supply passage is formed, the gas inlet space for collecting the gas in the upper or lower portion Etching apparatus characterized in that it further comprises.
[11" claim-type="Currently amended] The method of claim 9,
The nozzle unit may be formed under the first block, and may be coupled to and separated from the first block, and may include a plurality of holes, which are straight gas supply passages, and a gas inflow space for collecting the gas in an upper or lower portion thereof. Etching apparatus further comprises three blocks.
[12" claim-type="Currently amended] The method of claim 11,
And the nozzle unit further comprises a fourth block positioned below the third block and formed with a hole, which is a movement space of the gas in a wave form, and separated from and coupled to the third block.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2002-10-24|Application filed by 삼성전자주식회사

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2002-10-24|Priority to KR1020020065113A

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2004-05-03|Publication of KR20040036778A

优先权:

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申请号 | 申请日 | 专利标题

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KR1020020065113A|KR20040036778A|2002-10-24|2002-10-24|Etching apparatus for manufacturing semiconductor devices|