• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: An LPCVD(low pressure chemical vapor deposition) method for fabricating a semiconductor device is provided to prevent a defective process by inspecting the state of a barometer for measuring the pressure in a process chamber in real time. CONSTITUTION: Vacuum is applied to the inside of the process chamber. The barometer is inspected before an LPCVD process is performed. A pressure gauge is inspected. An airtight state is inspected before the LPCVD process is performed. The LPCVD process is performed, including intervals for temperature stabilization time, source gas deposition time and purge time.
    公开号:KR20040036776A
    申请号:KR1020020065110
    申请日:2002-10-24
    公开日:2004-05-03
    发明作者:오승재；김용철；이성현
    申请人:삼성전자주식회사；
    IPC主号:
    专利说明:

    Method of low persure chemical vapor deposition for fabricating semiconductor devices
    [5] The present invention relates to a low pressure chemical vapor deposition (LPCVD) method for manufacturing a semiconductor device, and more particularly, to a low pressure chemical vapor deposition method capable of preventing a defective process due to a pressure error.
    [6] The semiconductor device is formed by forming and patterning a conductive film and an insulating film on a substrate, respectively, to form an electronic circuit. One of the most important methods for forming the conductive and insulating films is low pressure chemical vapor deposition. Equipment in which the low pressure chemical vapor deposition process is performed is provided with a vacuum system such as a vacuum pump for forming low pressure and an air pressure measuring device such as a Baratron sensor for measuring the pressure in the process chamber.
    [7] 1 is a graph showing the temperature change in the process chamber of the low pressure chemical vapor deposition equipment with the progress of the process time. At this time, each section is divided and the pressure change in the process chamber or the operating state of the vacuum pump is described together.
    [8] Referring briefly to FIG. 1, the process chamber maintains a preparation temperature lower than the process temperature in a ready state for loading into the process chamber and unloading out of the process chamber. When the process substrate is loaded, the vacuum pump is started to apply vacuum. At this time, the temperature in the process chamber is changed to the process temperature by heating at the same time as the vacuum application or before and after the vacuum application (13). The airtight state of the process chamber is checked before the stabilization period 17-1 in the process chamber (15). The airtightness check is carried out through the full operation of the vacuum pump to establish a base vacuum, that is, a vacuum reference state, and a barometer measurement to check if there is an increase in air pressure while closing the connection lines through which outside air can be introduced. Thereafter, the temperature stabilization period 17-1, the deposition source gas is introduced, the deposition period 17-3 in which the process is performed, the purge period 17-5 for removing the source gas and introducing the purge gas, and atmospheric pressure. The cycle leading to the release period 18, which raises the temperature and lowers the temperature to the preparation temperature, and the preparation state 19, which unloads the process substrate, continues.
    [9] By the way, the conventional low-pressure chemical vapor deposition equipment is provided with a barometer, but the verification of the variations and functional abnormalities of the barometer is made through a periodic maintenance check. Therefore, the abnormality of the barometer cannot be verified for each process, and if a problem occurs in the standard or operation of the barometer at a specific time point, there is a problem that the defective process proceeds until an abnormality occurs in the subsequent process.
    [10] In addition, in the conventional low pressure chemical vapor deposition process, even when airtightness is not achieved, the airtight state check is performed once the process substrate is put into the process chamber and the temperature is raised to the process temperature before it is recognized. At this time, if the airtight state is found to be abnormal, the process does not continue, but the already loaded process board is heated at the process temperature, so the possibility of problems such as cracking or deformation due to stress in the subsequent process increases due to heating. There is.
    [11] The present invention is to eliminate the problems of the conventional low pressure chemical vapor deposition process described above low pressure chemical vapor deposition method that can detect the abnormality of the barometer for measuring the air pressure in the process chamber in real time every step to prevent the bad process is made The purpose is to provide.
    [12] The present invention also provides a low pressure chemical vapor deposition method that can detect in advance that the process substrate is not loaded before the next process substrate is loaded to reduce thermal shock and resulting process defects on the process substrate. For the purpose of
    [1] 1 is a graph showing the temperature change in the process chamber of the low pressure chemical vapor deposition equipment with the progress of the process time.
    [2] 2 is a graph showing temperature change and operation steps over time in an embodiment of the first configuration of the present invention.
    [3] 3 is a graph showing temperature change and operation steps over time in another embodiment of the second configuration of the present invention.
    [4] 4 is a graph of an embodiment in which the first and second configurations of the present invention are made together.
    [13] The first configuration of the low pressure chemical vapor deposition method of the present invention for achieving the above object, comprising a pumping step of applying a vacuum in the process chamber, pressure gauge verification step and gas tightness inspection step before chemical vapor deposition, chemical vapor deposition step Is done.
    [14] The second configuration of the low pressure chemical vapor deposition method of the present invention for achieving the above object comprises a pumping step for applying a vacuum in the process chamber, chemical vapor deposition step, airtight inspection step each one before and after chemical vapor deposition It features.
    [15] In the present invention, the pressure gauge verification step measures a change in the scale of the pressure gauge while supplying a predetermined amount, for example, 1500 cc of nitrogen, to the process chamber according to a predetermined pattern before the chemical vapor deposition step. It can be done by comparing with the pattern. The measured value change reference pattern can be obtained by flowing a certain amount of non-reactive gas such as nitrogen into the process chamber in a reference vacuum state (base vacuum) where airtightness is maintained, and measuring and recording the scale change of the pressure gauge. In each low pressure chemical vapor deposition process, if there is a significant difference between the pressure gauge scale change and the measured value change reference pattern during the pressure gauge verification step, unload the process board without going through the low pressure chemical vapor deposition step, and then Verification or replacement ensures accurate measurement of pressure in the process.
    [16] Hereinafter, the present invention will be described in more detail with reference to the following examples.
    [17] 2 is a graph showing temperature change and operation steps over time in an embodiment of the first configuration of the present invention.
    [18] Referring to FIG. 2, the process substrate is loaded into the process chamber in the first step 21, which is a preparation step, as in the conventional low pressure chemical vapor deposition process. In step 23, the process substrate entrance is closed, followed by a rise to the process temperature by heating with vacuum pumping. In two stages, the pressure in the process chamber is at base vacuum. In the third step 55, a predetermined amount of non-reactive gas is introduced into the process chamber according to a predetermined pattern. At this time, the measured value change of the pressure gauge is observed and compared with the measured value change reference pattern, that is, the measured value change trend as a reference. In other words, the pressure gauge verification step flows a certain amount of inert gas into the process chamber in accordance with a predetermined pattern in the reference vacuum state, measures the numerical change of the pressure gauge, and changes the measured value in advance to the steady state process chamber. And a measurement value change reference pattern obtained by flowing an amount of non-reactive gas equal to the predetermined amount into the process chamber according to the predetermined pattern.
    [19] At this time, if there is no significant difference between the measured value change reference pattern and the pressure gauge change, the process is continued. If there is a significant difference, the process is stopped and the pressure gauge is checked and replaced. If the process continues, step 4 (25) checks if the pressure gauge is maintained by sealing the process chamber in a base vacuum or constant vacuum. In the present invention, the third step 35 and the fourth step 25 may be changed in order.
    [20] Maintaining the measured value of the pressure gauge leads to step 5 (27) in which a low pressure chemical vapor is formed. Step 5 is generally divided into a section for temperature stabilization, a section in which the source gas is put into actual deposition, and a section in which a purge is performed. Thereafter, six steps 28 are performed in which the operation of lowering the temperature and the operation of raising the pressure to normal pressure are performed. When the temperature is lowered to the preparation temperature, seven steps 29 are performed in which the process substrate is unloaded. Then, the seventh step 29 is followed by the first step 21 and the process is performed periodically.
    [21] 3 is a graph showing temperature change and operation steps over time in another embodiment of the second configuration of the present invention.
    [22] Referring to FIG. 3, the process substrate is loaded into the process chamber in step 1 31, which is a preparatory step, as in the conventional low pressure chemical vapor deposition process. In step 33, the process substrate entrance is closed, followed by an increase in process temperature by heating with vacuum pumping. In the second stage, the atmospheric pressure in the process chamber reaches the base vacuum state. In step 3 (35), the process chamber is sealed in a base vacuum state or a constant vacuum state to check whether the measured value of the pressure gauge is maintained.
    [23] If the measured value of the pressure gauge is maintained, it proceeds to step 4 (37) where low pressure chemical vapor deposition is performed. Thereafter, the operation of lowering the temperature is performed. At this time, before increasing the pressure to atmospheric pressure while lowering the temperature, in this configuration, the fifth stage 56 in which the airtight state is checked in the closed state of the process chamber and the sixth stage 38 in which the operation of raising the pressure to atmospheric pressure are performed. Since the airtightness check of the process chamber is preferably performed at the same temperature as the process temperature, step 5 56 is to be located immediately after the low pressure chemical vapor deposition is performed. At this time, by checking the airtightness, it is determined whether to load the next process substrate. That is, at one point in the previous stage, it is possible to determine in advance whether there is an abnormality in the equipment to proceed to the next step without any additional burden, and if there is an abnormality, the temperature is increased to the process temperature while the next process substrate is loaded. no heat budget.
    [24] When the temperature is lowered to the preparation temperature, a seven step 39 is performed in which the process substrate is unloaded. Then, the seventh step 39 is followed by the first step 31 and the process is performed periodically.
    [25] 4 is a graph of an embodiment in which the first and second configurations of the present invention are made together.
    [26] Referring to FIG. 4, a process substrate is loaded into a process chamber in step 41, which is a preparation step. In step 43, the process substrate entrance is closed, followed by an increase in process temperature by heating with vacuum pumping. In step 43, the air pressure in the process chamber reaches the base vacuum state. In the third step 55, a predetermined amount of non-reactive gas is introduced into the process chamber according to a predetermined pattern. At this time, the measured value change of the pressure gauge is observed and compared with the measured value change reference pattern, that is, the measured value change trend as a reference. If the comparison confirms no significant difference, the process continues. In step 4 (45), the process chamber is sealed in a base vacuum state or a constant vacuum state to check whether the measured value of the pressure gauge is maintained.
    [27] If the measured value of the pressure gauge is maintained, it is followed by five steps (47) in which a low pressure chemical vapor is formed. Thereafter, the operation of lowering the temperature is performed. At this time, before increasing the pressure to the atmospheric pressure, in this configuration, the sixth step 56 in which the airtight state is checked in the closed state of the process chamber is followed by the seventh step 48 in which the operation of raising the pressure to the atmospheric pressure is performed.
    [28] When the temperature is lowered to the preparation temperature, an eight step 49 is performed in which the process substrate is unloaded. Then, the eighth step 49 is followed by the first step 41, and the process is performed periodically.
    [29] According to the present invention, the abnormality of the barometer for measuring the air pressure in the process chamber can be grasped in real time for each step to prevent a bad step from being made. In addition, when airtightness is not achieved in the process chamber, it may be detected in advance before the next process substrate is loaded without any additional burden in the existing process, thereby reducing thermal shock and process defects on the process substrate.
    权利要求:
    Claims (6)
    [1" claim-type="Currently amended] A pumping step of applying a vacuum in the process chamber,
    Pressure gauge verification step before low pressure chemical vapor deposition,
    Airtight inspection step before low pressure chemical vapor deposition and
    Characterized in that it comprises a low pressure chemical vapor deposition step
    Low pressure chemical vapor deposition method for manufacturing semiconductor device.
    [2" claim-type="Currently amended] The method of claim 1,
    And the pressure gauge verification step is located before the airtightness check step.
    [3" claim-type="Currently amended] The method of claim 1,
    In the pressure gauge verification step, a certain amount of inert gas is flowed into the process chamber according to a predetermined pattern in the reference vacuum state, and the numerical change of the pressure gauge is measured, and the measured value change is previously mounted in the process chamber in the steady state. And a method for comparing the measured value change reference pattern obtained by flowing an inert gas of the same amount into the process chamber according to the predetermined pattern.
    [4" claim-type="Currently amended] The method of claim 1,
    A low pressure chemical vapor deposition method for manufacturing a semiconductor device, characterized in that the airtight inspection step is further provided after the low pressure chemical vapor deposition step.
    [5" claim-type="Currently amended] The method of claim 1,
    The low pressure chemical vapor deposition step is a low pressure chemical vapor deposition method for manufacturing a semiconductor device, characterized in that it comprises a temperature stabilization period, a deposition period in which the source gas is supplied, a purge period.
    [6" claim-type="Currently amended] A pumping step of applying a vacuum in the process chamber,
    Airtight inspection step before low pressure chemical vapor deposition,
    Low pressure chemical vapor deposition stage,
    A low pressure chemical vapor deposition method for manufacturing a semiconductor device, characterized in that it comprises an airtight inspection step made after the low pressure chemical vapor deposition.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-10-24|Application filed by 삼성전자주식회사
    2002-10-24|Priority to KR1020020065110A
    2004-05-03|Publication of KR20040036776A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020020065110A|KR20040036776A|2002-10-24|2002-10-24|Method of low persure chemical vapour deposition for fabricating semiconductor devices|
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