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    • 专利摘要:
    The present invention is itself insoluble or poorly soluble in aqueous alkali solution, but has a resin, an acid generator, and an aromatic ring which are soluble in aqueous alkali solution by the action of acid, having a molecular weight of 1000 or less and a wavelength range of 190 nm to 260 nm. And a compound having a light absorption of at least 1000 liters / (mol * cm), wherein the compound is in the range of 0.01 to 20% by weight relative to the resin.
    公开号:KR20040036574A
    申请号:KR1020030073497
    申请日:2003-10-21
    公开日:2004-04-30
    发明作者:안도노부오；모리우마히로시；아라끼가오루；스에쯔구마스미
    申请人:스미또모 가가꾸 고오교오 가부시끼가이샤；
    IPC主号:
    专利说明:

    Chemically Amplified Positive Resist Composition {CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION}
    [1] The present invention relates to a chemically amplified resist composition that can be used for microfabrication of semiconductors.
    [2] Semiconductor micromachining uses a lithography process using a resist composition. In lithography, as indicated by Rayleigh's diffraction limit equation, in principle, the shorter the exposure wavelength, the higher the resolution. The wavelength of an exposure light source for lithography used in the manufacture of semiconductor devices is shortened every year by g-rays having a wavelength of 436 nm, i-rays having a wavelength of 365 nm, and KrF excimer lasers having a wavelength of 248 nm. ArF excimer lasers having a wavelength of 193 nm are promising as next-generation exposure light sources.
    [3] Since the lens used in the excimer laser exposure machine has a short life compared to the life of the lens used in the conventional exposure light source, it is preferable that the time exposed to the excimer laser light is as short as possible. For this purpose, it is necessary to enhance the sensitivity of the resist, so that a so-called chemically amplified resist containing a resin having a group which is cleaved by the action of the acid, which utilizes the catalysis of the acid generated by exposure, is used.
    [4] Recently, KrF and ArF resists have been applied to highly reflective substrates such as thinning of resist film thickness and ion implantation processes, and contribute to resist performance of standing wave effects, in particular, variations in shape and line width. This is increasing.
    [5] However, in the conventionally known chemically amplified resist composition, due to the influence of standing waves, unevenness occurs in the sidewalls of the resist or a roughness of the line edge occurs, that is, a phenomenon in which the smoothness of the pattern sidewall occurs. There was a problem that the uniformity of the line width deteriorated. In contrast, there has conventionally been a technique using an antireflection film for suppressing the influence of reflected light on a substrate (for example, JP11-511194-A).
    [6] An object of the present invention is KrF, which is excellent in various resist performances such as sensitivity and resolution, and improves the deterioration of smoothness of a pattern wall due to standing wave effects generated when applied to a high reflective substrate or caused by thinning of a resist film thickness. To provide a chemically amplified positive resist composition suitable for, for example, ArF excimer laser lithography.
    [7] The present invention relates to:
    [8] <1> itself is insoluble or poorly soluble in aqueous alkali solution, but has a resin, an acid generator, and an aromatic ring which are soluble in aqueous alkali solution by the action of acid, having a molecular weight of 1000 or less and a wavelength range of 190 nm to 260 nm. A chemically amplified positive resist composition containing a compound having a molar extinction coefficient of at least 1000 liters / (mol * cm), wherein the compound is in the range of 0.01 to 20% by weight relative to the resin.
    [9] <2> The chemically amplified positive resist composition according to the above <1>, wherein the compound is a compound having a light absorption coefficient of 1000 liter / (mol * cm) or more in a wavelength region of 190 nm to 200 nm.
    [10] <3> The chemically amplified positive resist composition according to <1>, wherein the compound is a compound having a light absorption coefficient of 1000 liter / (mol * cm) or more in a wavelength region of 240 nm to 260 nm.
    [11] <4> The chemically amplified positive resist composition according to any one of <1> to <3>, wherein the compound is at least one compound selected from the group consisting of a compound of Formula I and a compound of Formula II.
    [12]
    [13] Wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 each independently represent hydrogen, alkyl, alkoxy or hydroxyl, X 1 represents sulfur, oxygen or CH 2 Indicates.
    [14]
    [15] Wherein R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 and R 16 are each independently hydrogen, alkyl, alkoxy, carboxylate group, cyano, amino, phenyl, carboxyl, Benzoyl, hydroxyl or halogen, and at least one CH in alkyl or alkoxy may be substituted by nitrogen.
    [16] <5> In the above <4>, R 1 to R 8 each independently represent hydrogen, alkyl having 1 to 8 carbon atoms or alkoxy having 1 to 8 carbon atoms, and X 1 represents sulfur or oxygen and a chemically amplified positive resist. Composition.
    [17] <6> The chemically amplified positive resist composition according to <4>, wherein R 9 , R 10, and R 16 each independently represent hydrogen, cyano, or a carboxylate having 2 to 9 carbon atoms.
    [18] <7> The chemically amplified positive resist composition according to the above <6>, wherein the carboxylate having 2 to 9 carbon atoms is alkyloxycarbonyl having 2 to 9 carbon atoms.
    [19] <8> The chemically amplified positive resist composition according to any one of <1> to <7>, further comprising an organic base compound as a quencher.
    [20] The composition of the present invention has an aromatic ring and has a molecular weight of 1000 or less and a light having a molar extinction coefficient of 1000 liter / (mol * cm) or more, preferably 5000 liter / (mol * cm) or more in the wavelength region of 190 nm to 260 nm. It contains a compound having absorption (hereinafter referred to as "aromatic ring compound").
    [21] Preferred examples of the aromatic ring compound are represented by the following formulas I or II and include compounds showing a light absorption of at least 1000 liters / (mol * cm) in the wavelength region of 190 nm to 260 nm:
    [22] Equation I:
    [23]
    [24] (In Formula I, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 each independently represent hydrogen, alkyl, alkoxy or hydroxyl, and X 1 represents sulfur, oxygen. Or CH 2 )
    [25] Equation II:
    [26]
    [27] (In Formula II, R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 and R 16 are each independently hydrogen, alkyl, alkoxy, carboxylate group, cyano, amino, phenyl , Carboxyl, benzoyl, hydroxyl or halogen, at least one CH in alkyl or alkoxy may be substituted by nitrogen)
    [28] In formula I, the alkyl of R 1 to R 8 preferably has 1 to 8 carbon atoms, and the alkyl may be branched. Examples thereof include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, pentyl, isopentyl, s-pentyl, neopentyl, t-pentyl, 3-pentyl, hexyl, neohexyl , s-hexyl, heptyl, isoheptyl, neoheptyl, s-heptyl, octyl, isooctyl, t-octyl and the like. The alkoxy of R 1 to R 8 preferably has 1 to 8 carbon atoms, and the alkoxy may be branched. Examples thereof include methoxy, ethoxy, propoxy, isopropoxy, butoxy, isobutoxy, s-butoxy, t-butoxy, pentoxy, isopentoxy, s-pentoxy, neopentoxy, t -Pentoxy, 3-pentoxy, hexyloxy, neohexyloxy, s-hexyloxy, heptyloxy, isoheptyloxy, neoheptyloxy, s-heptyloxy, octyloxy, isooctyloxy, t-octyl Oxy and the like.
    [29] In formula I, sulfur and oxygen are preferred for X 1 , and hydrogen, alkyl of 1 to 8 carbon atoms, and alkoxy of 1 to 8 carbon atoms are preferred for R 1 to R 8 .
    [30] In the compounds of formula I, when two or more stereoisomers are present based on the cis / trans formation of carbon-carbon double bonds, one or a mixture of these may be used in the present invention.
    [31] The alkyl of R 9 to R 16 in formula II preferably has 1 to 8 carbon atoms, the alkyl may be branched, and at least one CH in the alkyl may be substituted by nitrogen. Examples thereof include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, pentyl, isopentyl, s-pentyl, neopentyl, t-pentyl, 3-pentyl, methylamino, dimethyl Amino, methylethylamino, diethylamino, aminomethyl, aminoethyl and the like.
    [32] The alkoxy of R 9 to R 16 preferably has 1 to 8 carbon atoms, the alkoxy may be branched, and at least one CH in the alkoxy may be substituted by nitrogen. Examples thereof include methoxy, ethoxy, propoxy, isopropoxy, butoxy, isobutoxy, s-butoxy, t-butoxy, pentoxy, isopentoxy, s-pentoxy, neopentoxy, t -Pentoxy, 3-pentoxy, aminomethoxy, N-methylaminomethoxy, N, N-dimethylaminomethoxy and the like.
    [33] The carboxylates (-COOR) in R 9 to R 16 preferably have 2 to 9 carbon atoms. Examples of the carboxylate (-COOR) include alkoxycarbonyl, alkenyloxycarbonyl, cycloalkyloxycarbonyl. Specific examples of the alcohol cycarbonyl include methoxycarbonyl, ethoxycarbonyl, propoxycarbonyl, isopropoxycarbonyl, butoxycarbonyl, isobutoxycarbonyl, s-butoxycarbonyl, t-part Methoxycarbonyl, pentoxycarbonyl, neopentoxycarbonyl, t-pentoxycarbonyl, isopentoxycarbonyl, s-pentoxycarbonyl, t-pentoxycarbonyl and the like. Specific examples of alkenyloxycarbonyl include vinyloxycarbonyl, allyloxycarbonyl, 1-, 2- or 3-butenyloxycarbonyl, and the like, and 1-, 2-, 3- or pentenyloxycarbonyl, and the like. Include. Specific examples of cycloalkyloxycarbonyl include cyclopentyloxycarbonyl, cyclopropyloxycarbonyl, cyclobutyloxycarbonyl, cyclohexyloxycarbonyl, cycloheptyloxycarbonyl, and the like.
    [34] Examples of halogen in R 9 to R 16 include fluorine, chlorine, bromine, iodine and the like.
    [35] In formula II, hydrogen, carboxylate having 2 to 9 carbon atoms and cyano are preferred for R 9 , R 10 and R 16 .
    [36] In the compounds of formula II, when two or more stereoisomers are present based on the cis / trans formation of carbon-carbon double bonds, one or a mixture of these may be used in the present invention.
    [37] The compound may be used in the form of a mixture of two or more compounds.
    [38] Typical examples of such compounds include compounds of the formula
    [39]
    [40]
    [41]
    [42]
    [43] The chemically amplified resist composition contains an acid generator that generates an acid by the action of radiation, and utilizes the catalysis of an acid generated from the acid generator in the radiation unit.
    [44] Specifically, the acid generated in the radiation unit is diffused by post exposure bake to dissociate a protecting group such as a resin, and as a result, the radiation unit is solubilized in alkali.
    [45] In the present invention, the resin itself is insoluble or poorly soluble in the aqueous alkali solution, but the resin soluble in the alkaline aqueous solution by the action of the acid has a protecting group separated by the action of the acid, but is itself insoluble or poorly soluble in the aqueous alkali solution. After the protecting group is separated by the action of an acid, the resin may be solubilized in an aqueous alkali solution.
    [46] For example, such a resin can be obtained by introducing a protecting group that can be separated by the action of an acid into an alkali-soluble resin.
    [47] As said alkali-soluble resin, alkali-soluble resin which has a phenol skeleton, alkali-soluble resin which has a (meth) acrylate group, and has an alicyclic ring and a carboxyl group on the alcohol side of ester, etc. are mentioned. Specific examples thereof include polyvinylphenol resins, polyisopropenylphenol resins, resins in which a portion of the hydroxyl groups of these polyvinylphenol resins or polyisopropenylphenol resins are alkyl-esterified, vinylphenol or isopropenylphenol. And a polymer of a copolymerizable resin of another polymerizable unsaturated compound, a polymer of an alicyclic ester of (meth) acrylic acid, a resin having a carboxyl group in its alicyclic ring, and a copolymer resin of an alicyclic ester of (meth) acrylic acid and (meth) acrylic acid And the like.
    [48] Such groups, which have dissolution inhibiting ability with respect to aqueous alkali solution but are unstable with acid, may be various known protecting groups. Examples thereof include groups in which tetravalent carbons such as t-butyl, t-butoxycarbonyl, t-butoxycarbonylmethyl and the like are bonded to an oxygen atom; Methoxymethyl, ethoxymethyl, 1-ethoxyethyl, 1-isobutoxyethyl, 1-isopropoxyethyl, 1-ethoxypropyl, tetrahydro-2-pyranyl, tetrahydro-2-furyl, 1- (2-methylpropoxy) ethyl, 1- (2-methoxyethoxy) ethyl, 1- (2-acetoxyethoxy) ethyl, 1- [2- (1-adamantyloxy) ethoxy] ethyl Acetal groups such as 1- [2- (1-adamantanecarbonyloxy) ethoxy] ethyl and the like; Isobornyl, 1- (1-adamantyl) -1-alkyl, 3-oxocyclohexyl, 4-methyltetrahydro-2-pyron-4-yl (derived from mevalonic lactone), 2-methyl- Non-aromatic ring compounds such as 2-adamantyl, 2-ethyl-2-adamantyl, and the like.
    [49] These groups will be substituted with hydrogen atoms of phenolic hydroxyl groups or hydrogen atoms of carboxyl groups.
    [50] These groups can be introduced into alkali-soluble resins having phenolic hydroxyl groups or carboxyl groups by introduction reactions known in the art. In addition, the above-mentioned resins can be obtained by copolymerization using an unsaturated compound having such a group as one monomer.
    [51] The acid generator in the composition of the present invention may be selected from various compounds which generate an acid by irradiating radiation to the substance itself or to the resist composition containing the substance. For example, onium salts, halogenated alkyltriazine-based compounds, disulfone-based compounds, compounds having a diazomethanesulfonyl skeleton, sulfonate-based compounds and the like can be mentioned. As onium salts, onium salts containing at least one nitro group in the anion, onium salts containing at least one ester group in the anion, and the like can be mentioned.
    [52] Diphenyl iodonium trifluoromethanesulfonate,
    [53] 4-methoxyphenylphenyl iodonium hexafluoroantimonate,
    [54] 4-methoxyphenylphenyl iodonium trifluoromethanesulfonate,
    [55] Bis (4-t-butylphenyl) iodonium tetrafluoroborate,
    [56] Bis (4-t-butylphenyl) iodonium hexafluorophosphate,
    [57] Bis (4-t-butylphenyl) iodonium hexafluoroantimonate,
    [58] Bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate,
    [59] Triphenylsulfonium hexafluorophosphate,
    [60] Triphenylsulfonium hexafluoroantimonate,
    [61] Triphenylsulfonium trifluoromethanesulfonate,
    [62] p-tolyldiphenylsulfonium trifluoromethanesulfonate,
    [63] p-tolyldiphenylsulfonium perfluorobutanesulfonate,
    [64] p-tolyldiphenylsulfonium perfluorooctanesulfonate,
    [65] 2,4,6-trimethylphenyldiphenylsulfonium trifluoromethanesulfonate,
    [66] 4-t-butylphenyldiphenylsulfonium trifluoromethanesulfonate,
    [67] 4-phenylthiophenyldiphenylsulfonium hexafluorophosphate,
    [68] 4-phenylthiophenyldiphenylsulfonium hexafluoroantimonate,
    [69] 1- (2-naphtolylmethyl) thioranium hexafluoroantimonate,
    [70] 1- (2-naphtolylmethyl) thioranium trifluoromethanesulfonate,
    [71] 4-hydroxy-1-naphthyldimethylsulfonium hexafluoroantimonate,
    [72] 4-hydroxy-1-naphthyldimethylsulfonium trifluoromethanesulfonate,
    [73] Cyclohexylmethyl (2-oxocyclohexyl) sulfonium trifluoromethylsulfonate,
    [74] Cyclohexylmethyl (2-oxocyclohexyl) sulfonium perfluorobutanesulfonate,
    [75] Cyclohexylmethyl (2-oxocyclohexyl) sulfonium perfluorooctanesulfonate,
    [76] 2-oxo-2-phenylethylthiacyclopentanium trifluoromethanesulfonate,
    [77] 2-oxo-2-phenylethylthiacyclopentanium perfluorobutanesulfonate,
    [78] 2-oxo-2-phenylethylthiacyclopentanium perfluorooctanesulfonate,
    [79] 2-methyl-4,6-bis (trichloromethyl) -1,3,5-triazine,
    [80] 2,4,6-tris (trichloromethyl) -1,3,5-triazine,
    [81] 2-phenyl-4,6-bis (trichloromethyl) -1,3,5-triazine,
    [82] 2- (4-chlorophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [83] 2- (4-methoxyphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [84] 2- (4-methoxy-1-naphthyl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [85] 2- (benzo [d] [1,3] dioxolan-5-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [86] 2- (4-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [87] 2- (3,4,5-trimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [88] 2- (3,4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [89] 2- (2,4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [90] 2- (2-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [91] 2- (4-butoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [92] 2- (4-pentyloxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [93] Diphenyl disulfone,
    [94] Di-p-tolyl disulfone,
    [95] Bis (phenylsulfonyl) diazomethane,
    [96] Bis (4-chlorophenylsulfonyl) diazomethane,
    [97] Bis (p-tolylsulfonyl) diazomethane,
    [98] Bis (4-t-butylphenylsulfonyl) diazomethane,
    [99] Bis (2,4-xylylsulfonyl) diazomethane,
    [100] Bis (cyclohexylsulfonyl) diazomethane,
    [101] (Benzoyl) (phenylsulfonyl) diazomethane,
    [102] 1-benzoyl-1-phenylmethyl p-toluenesulfonate (commonly referred to as "benzointosylate"),
    [103] 2-benzoyl-2-hydroxy-2-phenylethyl p-toluenesulfonate (commonly referred to as "α-methylolbenzoin tosylate"),
    [104] 1,2,3-benzene-tri-yl tris (methanesulfonate),
    [105] 2,6-dinitrobenzyl p-toluenesulfonate,
    [106] 2-nitrobenzyl p-toluenesulfonate,
    [107] 4-nitrobenzyl p-toluenesulfonate,
    [108] N- (phenylsulfonyloxy) succinimide,
    [109] N- (trifluoromethylsulfonyloxy) succinimide,
    [110] N- (trifluoromethylsulfonyloxy) phthalimide,
    [111] N- (trifluoromethylsulfonyloxy) -5-norbornene-2,3-dicarboxyimide,
    [112] N- (trifluoromethylsulfonyloxy) naphthalimide,
    [113] N- (10-camphorsulfonyloxy) naphthalimide and the like.
    [114] In the resist composition of the present invention, by adding an organic base compound as a quencher, it is possible to improve the deterioration in performance due to deactivation of delilic acid after exposure. The organic base compound is particularly preferably a nitrogen-containing basic organic compound. Specific examples of such nitrogen-containing basic organic compounds include amines of the following formula.
    [115]
    [116]
    [117] In the formula, T 12 and T 13 each independently represent hydrogen, alkyl cycloalkyl or aryl. Alkyl preferably has about 1 to 6 carbon atoms, cycloalkyl preferably has about 5 to 10 carbon atoms, and aryl preferably has about 6 to 10 carbon atoms. Moreover, at least one hydrogen on the alkyl, cycloalkyl or aryl may be independently substituted with a hydroxyl group, an amino group or an alkoxy group having 1 to 6 carbon atoms. At least one hydrogen on the amino group may be each independently substituted with an alkyl group having 1 to 4 carbon atoms.
    [118] T 14 , T 15 and T 16 each independently represent hydrogen, alkyl, cycloalkyl, aryl or alkoxy. Alkyl preferably has about 1 to 6 carbon atoms, cycloalkyl preferably has about 5 to 10 carbon atoms, aryl preferably has about 6 to 10 carbon atoms, and alkoxy preferably Has about 1 to 6 carbon atoms. Furthermore, at least one hydrogen on the alkyl, cycloalkyl, aryl or alkoxy may be independently substituted with a hydroxyl group, an amino group or an alkoxy group having 1 to 6 carbon atoms. At least one hydrogen on the amino group may be each independently substituted with an alkyl group having 1 to 4 carbon atoms.
    [119] T 17 represents alkyl or cycloalkyl. Alkyl preferably has about 1 to 6 carbon atoms and cycloalkyl preferably has about 5 to 10 carbon atoms. Moreover, at least one hydrogen on the alkyl or cycloalkyl may be independently substituted with a hydroxyl group, an amino group or an alkoxy group having 1 to 6 carbon atoms. At least one hydrogen on the amino group may be each independently substituted with an alkyl group having 1 to 4 carbon atoms.
    [120] In the formula, T 18 represents alkyl, cycloalkyl or aryl. Alkyl preferably has about 1 to 6 carbon atoms, cycloalkyl preferably has about 5 to 10 carbon atoms, and aryl preferably has about 6 to 10 carbon atoms. Moreover, at least one hydrogen on the alkyl, cycloalkyl or aryl may be independently substituted with a hydroxyl group, an amino group or an alkoxy group having 1 to 6 carbon atoms. At least one hydrogen on the amino group may be each independently substituted with an alkyl group having 1 to 4 carbon atoms.
    [121] However, none of T 12 and T 13 in the compound represented by the above formula 3 is hydrogen.
    [122] A represents alkylene, carbonyl, imino, sulfide or disulfide. The alkylene preferably has about 2 to 6 carbon atoms.
    [123] Moreover, any of T 12 -T 18 that can obtain both linear and branched structures is acceptable.
    [124] T 19 , T 20 and T 21 are each independently hydrogen, alkyl having 1 to 6 carbon atoms, aminoalkyl having 1 to 6 carbon atoms, hydroxyalkyl having 1 to 6 carbon atoms or substituted or unsubstituted aryl having 6 to 20 carbon atoms, Or T 19 and T 20 combine to form an alkylene which, together with adjacent CO-N, forms a lactam ring.
    [125] Examples of such compounds are hexylamine, heptylamine, octylamine, nonylamine, decylamine, aniline, 2-, 3- or 4-methylaniline, 4-nitroaniline, 1- or 2-naphthylamine, ethylenediamine , Tetramethylenediamine, hexamethylenediamine, 4,4'-diamino-1,2-diphenylethane, 4,4'-diamino-3,3'-dimethyldiphenylmethane, 4,4'-diamino -3,3'-diethyldiphenylmethane, dibutylamine, dipentylamine, dihexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, N-methylaniline, piperidine, di Phenylamine, triethylamine, trimethylamine, tripropylamine, tributylamine, tripentylamine, trihexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, methyldibutylamine, methyldipentyl Amines, methyldihexylamine, methyldicyclohexylamine, methyldiheptylamine, methyldioctylamine, methyldinonylamine, methyldidecylamine, ethyldibutylamine, Tildipentylamine, ethyldihexylamine, ethyldiheptylamine, ethyldioctylamine, ethyldinonylamine, ethyldidecylamine, dicyclohexylmethylamine, tris [2- (2-methoxyethoxy) ethyl] Amine, triisopropanolamine, N, N-dimethylaniline, 2,6-isopropylaniline, imidazole, pyridine, 4-methylpyridine, 4-methylimidazole, bipyridine, 2,2'-dipyridylamine , Di-2-pyridyl ketone, 1,2-di (2-pyridyl) ethane, 1,2-di (4-pyridyl) ethane, 1,3-di (4-pyridyl) propane, 1, 2-bis (2-pyridyl) ethylene, 1,2-bis (4-pyridyl) ethylene, 1,2-bis (2-pyridyloxy) ethane, 4,4'-dipyridyl sulfide, 4 , 4'-dipyridyl disulfide, 1,2-bis (4-pyridyl) ethylene, 2,2'-dipicolylamine, 3,3'-dipicolylamine, tetramethylammonium hydroxide, tetraiso Propylammonium hydroxide, tetrabutylammonium hydroxide, tetra-n-hexylammonium hydroxide, tetra-n-octylammonium hydroxide, phenyl Trimethylammonium hydroxide, 3-trifluoromethylphenyltrimethylammonium hydroxide, (2-hydroxyethyl) trimethylammonium hydroxide (so-called "choline"), N-methylpyrrolidone, dimethylimidazole and the like.
    [126] Furthermore, hindered amine compounds having a piperidine backbone as disclosed in JP-A-H11-52575 can be used as quencher.
    [127] It is preferable that the resist composition of this invention contains an acid generator in the range of 0.01-20 weight% based on the resin amount.
    [128] When an organic basic compound is contained as a quencher, it is preferable to be contained in 0.001 to 2 weight% based on the weight of resin, and it is more preferable to contain in 0.01 to 1 weight%.
    [129] The composition of the present invention may contain a small amount of various additives such as a sensitizer, a dissolution inhibitor, another resin, a surfactant, a stabilizer, a dye, and the like as long as the effect of the present invention is not lowered.
    [130] The composition is usually in the form of a resist liquid composition in which each of the above mentioned components is dissolved in a solvent, and the resist liquid composition is applied by a conventional method such as spin coating on a substrate such as a silicon wiper. The solvent used herein is sufficient to dissolve the above-mentioned components, have an appropriate drying rate, and provide a uniform and smooth coating after evaporating the solvent, and solvents conventionally used in this field may be used. Total solids content in the present invention is the total content excluding the solvent.
    [131] Examples thereof include glycol ether esters such as ethylcellosolve acetate, methylcellosolve acetate and propylene glycol monomethyl ether acetate; Esters such as ethyl lactate, butyl lactate, amyl lactate and ethylpyruvate and the like; Ketones such as acetone, methyl isobutyl ketone, 2-heptanone and cyclohexanone; Cyclic esters such as gamma-butyrolactone and the like. These solvents may be used alone or in combination of two or more.
    [132] The resist film dried after being applied onto the substrate is subjected to an exposure treatment for patterning, followed by heat treatment to promote the deprotecting group reaction, and then developed with an alkaline developer. The alkaline developer used herein can be any one of several alkaline aqueous solutions used in the art, and typically tetramethylammonium hydroxide or (2-hydroxyethyl) trimethylammonium hydroxide (commonly known as "choline") Frequently used.
    [133] In the above description, embodiments of the present invention have been described, but the embodiments of the present invention described above are merely exemplary, and the scope of the present invention is not limited to these embodiments. The scope of the invention is indicated by the claims, and also includes all modifications within the meaning and range equivalent to the description of the claims.
    [134] The following examples illustrate the present invention more specifically, but the scope of the present invention is not limited to these examples. In the examples, parts indicating the amount of use are based on weight unless otherwise specified. The weight-average molecular weight is a value obtained by gel permeation chromatography using polystyrene as a standard.
    [135] Resin synthesis example 1 (synthesis of resin A1)
    [136] 2-ethyl-2-adamantyl methacrylate, 3-hydroxy-1-adamantyl methacrylate and α-methacryloyloxy-γ-butyrolactone in a molar ratio of 5: 2.5: 2.5 (20.0) Part: 9.5 parts: 7.3 parts), and 2 weight times methyl isobutyl ketone were added to the total monomer to make a solution. To this solution, azobisisobutyronitrile was added as an initiator in a ratio of 2 mol% relative to the total molar amount of the monomer, and the mixture was heated at 80 ° C. for about 8 hours. Thereafter, the reaction solution was poured into a large amount of heptane to cause precipitation, and this operation was repeated three times for purification. As a result, a copolymer having a weight-average molecular weight of about 9,200 was obtained. This copolymer had the unit of the following formula, and was represented by Resin A1.
    [137]
    [138] Synthesis of Resin Example 2 (Synthesis of 2-ethyl-2-adamantyl methacrylate / p-acetoxystyrene copolymer (20:80))
    [139] 39.7 g (0.16 mol) of 2-ethyl-2-adamantyl methacrylate, 103.8 g (0.64 mol) of p-acetoxystyrene and 265 g of isopropanol were added to the flask and heated to 75 ° C. under a nitrogen atmosphere. To this solution was added dropwise a solution of 11.05 g (0.048 mol) of dimethyl 2,2'-azobis (2-methylpropionate) in 22.11 g of isopropanol. The mixture was stirred at 75 ° C. for about 0.3 hours, stirred at reflux for about 12 hours, diluted with acetone, and the reaction solution was poured into a large amount of methanol to precipitate a polymer and filtered.
    [140] The yield of the copolymer of 2-ethyl-2-adamantyl methacrylate and p-acetoxystyrene obtained was 250 g (the weight of the wet cake including methanol).
    [141] Resin Synthesis Example 3 (Synthesis of 2-ethyl-2-adamantyl methacrylate / p-hydroxystyrene copolymer (20:80), resin A2)
    [142] Into the flask was placed 250 g of a copolymer of 2-ethyl-2-adamantyl methacrylate and p-acetoxystyrene (20:80), 10.3 g (0.084 mol) of 4-dimethylaminopyridine, and 202 g of methanol. The mixture was stirred at reflux for 20 h. After cooling, the reaction solution was neutralized in 7.6 g (0.126 mol) of glacial acetic acid, and then precipitated by pouring a large amount of water. The precipitated polymer was filtered, dissolved in acetone, and poured into a large amount of water to precipitate for three times.
    [143] The weight of the copolymer of 2-ethyl-2-adamantyl methacrylate and p-hydroxystyrene obtained was 95.9 g. The weight-average molecular weight was about 8600, the dispersion degree was 1.65 (GPC method: converted to polystyrene), and the copolymerization ratio was measured at about 20:80 by nuclear magnetic resonance ( 13 C-NMR) spectrometer. This resin was referred to as Resin A2.
    [144] Now, in addition to each resin obtained in the above resin synthesis example, the resist composition was produced and evaluated using the following raw material.
    [145] <Acid generator>
    [146] B1: tris (4-t-butylphenyl) sulfonium trifluoromethanesulfonate
    [147] B2: 4-methyldiphenylsulfonium trifluoromethanesulfonate
    [148] B3: triphenylsulfonium triisopropylbenzenesulfonate
    [149] B4: bis (t-butylsulfonyl) diazomethane
    [150] 〈Quantcher〉
    [151] C1: 2,6-diisopropylaniline
    [152] <Compound having aromatic ring and showing light absorption at 190 to 260 nm>
    [153] D1: mixture of the following compounds, molecular weight: 254
    [154] Light absorption coefficient at wavelength 200 nm = 23000 liters / (mol * cm)
    [155] Light absorption coefficient at wavelength of 250 nm = 35600 liters / (mol * cm)
    [156]
    [157] D2: the following compound, molecular weight: 294
    [158] Light absorption coefficient at wavelength of 200 nm = 12000 liters / (mol * cm)
    [159]
    [160] D3: It synthesize | combined as follows.
    [161] Compound Synthesis Example 1 (Synthesis of Compound D3)
    [162] (1a) Copolymer synthesis of 2-ethyl-2-adamantyl methacrylate and p-acetoxystyrene (30:70)
    [163] 59.6 g (0.24 mol) of 2-ethyl-2-adamantyl methacrylate, 90.8 g (0.56 mol) of p-acetoxystyrene and 279 g of isopropanol were added to the flask, and the mixture was heated to 75 ° C. under a nitrogen atmosphere. To this solution was added dropwise a solution of 11.05 g (0.048 mol) of dimethyl 2,2'-azobis (2-methylpropionate) in 22.11 g of isopropanol. The mixture was stirred at 75 ° C. for 0.3 hours, stirred at reflux for about 12 hours, diluted with acetone and poured into methanol to crystallize, and the crystals were filtered off. The crude crystal of the obtained copolymer of 2-ethyl-2-adamantyl methacrylate and p-acetoxystyrene was 250 g.
    [164] (1b) Copolymer synthesis of 2-ethyl-2-adamantyl methacrylate and p-hydroxystyrene (30:70)
    [165] 250 g of crude crystal copolymer of 2-ethyl-2-adamantyl methacrylate and p-acetoxystyrene (30:70) obtained in (1a) in a flask, 10.8 g (0.088 mol) of 4-dimethylaminopyridine 239 g of methanol were added and the mixture was stirred at reflux for 20 hours. After cooling, the mixture was neutralized with 8.0 g (0.133 mol) of glacial acetic acid, then poured into water to crystallize and the crystals were filtered off. This crystal was then dissolved in acetone and poured into water to crystallize and the crystals were filtered off. This operation was repeated three times in total and the obtained crystals were dried. The weight of the obtained crude crystal copolymer of 2-ethyl-2-adamantyl methacrylate and p-hydroxystyrene was 102.8 g. The weight-average molecular weight was about 8200, the dispersity was 1.68 (GPC method: converted to polystyrene), and the copolymerization ratio was measured to be about 30:70 by nuclear magnetic resonance ( 13 C-NMR) spectrometer. This resin was referred to as Resin D3.
    [166] <menstruum>
    [167] E1: Propylene Glycol Monomethyl Ether Acetate: 104.5 parts
    [168] γ-butyrolactone: 5.5 parts
    [169] E2: Propylene Glycol Monomethyl Ether Acetate: 130 parts
    [170] Examples 1 to 6 and Comparative Examples 1 to 3
    [171] The following components were mixed and dissolved, and again filtered through a fluorine resin filter having a pore size of 0.2 µm to prepare a resist liquid:
    [172] Resin (Type and amount are listed in Table 1)
    [173] Acid generators (types and amounts listed in Table 1)
    [174] Quenchers (types and amounts listed in Table 1)
    [175] Additives (Types and amounts listed in Table 1)
    [176] Solvents (Types and amounts listed in Table 1)
    [177] On the silicon wiper, the resist liquid was spin-coated so that the film thickness after drying was 0.185 mu m. After applying the resist liquid, the resist liquid was pre-baked for 60 seconds at the temperature shown in the "PB" column of Table 1 on the direct hot plate. In each of the wipers in which the resist film was formed in this way, the exposure dose was changed step by step using an ArF excimer stepper ("NSR ArF" manufactured by Nikon Corporation, NA = 0.55, ring band illumination (σout = 0.75, σin = 0.50)). It exposed to the line and space pattern. After exposure, a post exposure bake was performed for 60 seconds at the temperature indicated in the "PEB" column of Table 1, followed by paddle development for 60 seconds with a 2.38% by weight aqueous solution of tetramethylammonium hydroxide. Was performed.
    [178] The bright field pattern after development on the organic antireflection film substrate was observed with a scanning electron microscope, and the results are shown in Table 2.
    [179] The "bright field pattern" used herein is a reticle in which the outer frame is a chromium layer (light shielding layer) and a linear chromium layer (light shielding layer) is formed on the glass surface (light transmitting portion) provided inside the outer frame. It can obtain by exposure and image development via). Therefore, the bright field pattern is a pattern in which a resist layer around the line and space pattern is removed after exposure and development, and a line and space pattern corresponding to the outer frame remains.
    [180] Furthermore, the resist liquid was spin-coated on a quartz wiper so that the film thickness after drying might be 0.185 micrometer. After application of the resist solution, pre-baker was carried out on a direct hot plate for 60 seconds at the temperature indicated in the "PB" column of Table 1. Thus, the transmittance | permeability of each wiper in which the resist film was formed was measured using the spectrophotometer (Beckmann-made "DU-640", the quartz wiper was used as a blank).
    [181] The molar extinction coefficient was measured by dissolving the compound in CH 3 CN and using a spectrophotometer (type U-3500 manufactured by Hitachi Co., Ltd.) using a quartz cell having an optical path of 1 cm.
    [182] The molar extinction coefficient was calculated by dividing the absorbance (unit: 1 / cm) obtained by the spectrophotometer by the molar concentration (unit: mol / liter). The unit of molar extinction coefficient was liter / (mol * cm).
    [183] Effectiveness: It was expressed by the exposure amount which makes a line pattern (light shielding layer) and a space pattern (light transmission layer) 1: 1 after exposure and development through a 0.14 micrometer line and space pattern mask.
    [184] Resolution: The minimum size of the line and space pattern separated by the exposure amount of the effective sensitivity is expressed.
    [185] Smoothness of the pattern wall surface: The surface of the dense line and the space pattern (line: space = 1: 1) and the independent slit pattern were observed to be smoother than that of Comparative Example 1 by observing with a scanning electron microscope. , The thing without change was judged as x.
    [186] Transmittance: The transmittance for 193 nm light of a film coated on a quartz wiper at a film thickness of 0.185 μm.
    [187] Example NumberResin (part)AG * 1 (part)QU * 2 (part)CA * 3 (part)SO * 4 (part)PBPEB Example 1A1 (10)B1 (0.55)C1 (0.06)D1 (0.3)E1100 ℃120 ℃ Example 2A1 (10)B1 (0.55)C1 (0.06)D1 (0.3)E1115 ℃120 ℃ Example 3A1 (10)B1 (0.55)C1 (0.03)D1 (0.4)E1115 ℃120 ℃ Example 4A1 (10)B2 (0.40)C1 (0.03)D1 (0.2)E1115 ℃120 ℃ Example 5A1 (10)B1 (0.55)C1 (0.06)D2 (0.3)E1100 ℃120 ℃ Example 6A1 (10)B1 (0.55)C1 (0.06)D2 (0.3)E1115 ℃120 ℃ Comparative Example 1A1 (10)B1 (0.55)C1 (0.03)-E1115 ℃120 ℃ Comparative Example 2A1 (10)B2 (0.40)C1 (0.03)D3 (0.2)E1115 ℃120 ℃ Comparative Example 3A1 (10)B2 (0.40)C1 (0.03)D3 (0.5)E1115 ℃120 ℃
    [188] * 1 (AG): acid generator
    [189] * 2 (QU): Queen
    [190] * 3 (CA): A compound having an aromatic ring and showing light absorption in the region of 190 to 260 nm.
    [191] * 4 (SO): Solvent
    [192] Example numberEffectiveness (mJ / cm 2 )Resolution (μm)Smoothness of pattern wallTransmittance (%) Example 117.50.14 54.8 Example 218.50.14 54.8 Example 39.50.13 52.5 Example 46.00.13 57.7 Example 518.00.13 61.4 Example 618.00.13 61.4 Comparative Example 17.50.13-66.6 Comparative Example 25.00.13×57.0 Comparative Example 35.50.14×46.9
    [193] Example 7, 8 and Comparative Example 4
    [194] The following components were mixed and dissolved, and again filtered through a fluorine resin filter having a pore size of 0.2 µm to prepare a resist liquid.
    [195] Resin A2 4.3 parts / D3 5.7 parts
    [196] Acid generator B3 0.33 parts / B4 0.33 parts
    [197] Quencher C1 0.04
    [198] The amount of compound D1 is listed in Table 3.
    [199] Solvent E2 132 parts
    [200] On the silicon wiper, the resist liquid was spin-coated so that the film thickness after drying was 0.25 mu m. After the resist liquid was applied, it was pre-baked for 60 seconds at a temperature of 110 ° C. on a direct hot plate. In each of the wipers in which the resist film was formed in this way, an exposure dose was gradually stepped using KrF excimer stepper ("NSR-2205EX12B" manufactured by Nikon Corporation, NA = 0.55, annular band illumination (σout = 0.8, σin = 0.53)). It changed and exposed to a line and a space pattern. After exposure, a post exposure baker was carried out at a temperature of 120 ° C. for 60 seconds, followed by a paddle phenomenon for 60 seconds with a 2.38% by weight aqueous tetramethylammonium hydroxide solution. The bright field pattern after development on the organic antireflection film substrate was observed with a scanning electron microscope, and the results are shown in Table 4.
    [201] The resist liquid was spin-coated on a quartz wiper so that the film thickness after drying was 0.28 mu m. After application of the resist solution, pre-baking was carried out for 60 seconds at a temperature of 110 ° C. on a direct hot plate. Thus, the transmittance | permeability of each wiper in which the resist film was formed was measured using the spectrophotometer (Beckmann-made "DU-640", the quartz wiper was used as a blank).
    [202] In addition, the molar extinction coefficient was measured in the same manner as in Example 1.
    [203] Effectiveness: After exposure and development through a 0.24 µm line and space pattern mask, the exposure pattern was expressed such that the line pattern (light shielding layer) and the space pattern (light transmissive layer) were 1: 1.
    [204] Resolution: Measured in the same manner as in Example 1.
    [205] Smoothness of the pattern wall surface: The surface of the dense line and the space pattern (line: space = 1: 1) and the independent slit pattern were observed to be smoother than that of Comparative Example 4 by observing with a scanning electron microscope. , The thing without change was judged as x.
    [206] Transmittance: The transmittance for light of 248 nm of a film coated on a quartz wiper at a film thickness of 0.25 μm.
    [207] Example numberVolume of D1 Example 70.26 parts Example 80.50 parts Comparative Example 4none
    [208] Example numberEffectiveness (mJ / cm 2 )Resolution (μm)Smoothness of pattern wallTransmittance (%) Example 716.50.15 74 Example 818.00.15 66 Comparative Example 413.50.15-86
    [209] In the chemically amplified positive resist composition of the present invention, a phenomenon in which irregularities are formed on the side of the resist due to the standing wave effect which is a problem when the thickness of the resist film is applied or when applied to a high reflective substrate is remarkably decreased, and the smoothness of the pattern side is reduced. An improved resist pattern is provided, or each resist characteristic such as dry etching resistance, sensitivity, and resolution is improved.
    [210] Therefore, this composition is suitable for exposure using an ArF or KrF excimer laser, whereby a high performance resist pattern can be obtained.
    权利要求:
    Claims (8)
    [1" claim-type="Currently amended] It itself is insoluble or poorly soluble in aqueous alkali solution, but has a resin, an acid generator, and an aromatic ring which is soluble in aqueous alkali solution by the action of acid, and has molar absorption in the wavelength range of 190 nm to 260 nm with a molecular weight of 1000 or less. A chemically amplified positive resist composition containing a compound having a coefficient of light absorption of at least 1000 liters / (mol * cm), wherein the compound is in the range of 0.01 to 20% by weight relative to the resin.
    [2" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 1, wherein the compound is a compound having a light absorption of at least 1000 liter / (mol * cm) in a wavelength range of 190 nm to 200 nm.
    [3" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 1, wherein the compound is a compound having a light absorption of at least 1000 liter / (mol * cm) in a wavelength range of 240 nm to 260 nm.
    [4" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 1, wherein the compound is at least one compound selected from the group consisting of a compound of Formula I and a compound of Formula II:

    (Wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 each independently represent hydrogen, alkyl, alkoxy or hydroxyl, X 1 represents sulfur, oxygen or CH 2 Indicates)

    (Wherein R 9 , R 10 , R 11 , R 12 , R 13 , R 14 , R 15 and R 16 are each independently hydrogen, alkyl, alkoxy, carboxylate group, cyano, amino, phenyl, carboxyl , Benzoyl, hydroxyl or halogen, and at least one CH in alkyl or alkoxy may be substituted by nitrogen).
    [5" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 4, wherein each of R 1 to R 8 independently represents hydrogen, alkyl of 1 to 8 carbon atoms or alkoxy of 1 to 8 carbon atoms, and X 1 represents sulfur or oxygen.
    [6" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 4, wherein R 9 , R 10 and R 16 each independently represent hydrogen, cyano or a carboxylate having 2 to 9 carbon atoms.
    [7" claim-type="Currently amended] 7. The chemically amplified positive resist composition according to claim 6, wherein the carboxylate having 2 to 9 carbon atoms represents alkyloxycarbonyl having 2 to 9 carbon atoms.
    [8" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 1, further comprising an organic base compound as a quencher.
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    同族专利:
    公开号 | 公开日
    US20040191670A1|2004-09-30|
    TWI290264B|2007-11-21|
    TW200413844A|2004-08-01|
    KR101004276B1|2011-01-03|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-10-23|Priority to JPJP-P-2002-00308103
    2002-10-23|Priority to JP2002308103
    2003-04-16|Priority to JP2003111280
    2003-04-16|Priority to JPJP-P-2003-00111280
    2003-10-21|Application filed by 스미또모 가가꾸 고오교오 가부시끼가이샤
    2004-04-30|Publication of KR20040036574A
    2011-01-03|Application granted
    2011-01-03|Publication of KR101004276B1
    优先权:
    申请号 | 申请日 | 专利标题
    JPJP-P-2002-00308103|2002-10-23|
    JP2002308103|2002-10-23|
    JP2003111280|2003-04-16|
    JPJP-P-2003-00111280|2003-04-16|
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