• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    An electron emission exposure apparatus using a patterned emitter is provided. In the electron emission exposure apparatus, the pyroelectric emitter emits electrons using a patterned metal thin film as a mask. When the emitter is heated, electrons are not emitted in the part covered by the metal thin film in the emitter, but electrons are emitted from the part covered by the dielectric film, and the emitter pattern shape is projected onto the substrate. In order to prevent the spread of the emitted electron beam, the electron beam is controlled using a magnet or direct current field generator or deflection device, thus 1: 1 or x: 1 projection of the desired pattern etched onto the substrate. Can be obtained.
    公开号:KR20040007200A
    申请号:KR1020020070661
    申请日:2002-11-14
    公开日:2004-01-24
    发明作者:김동욱；유인경；문창욱
    申请人:삼성전자주식회사；
    IPC主号:
    专利说明:

    Exposure apparatus using patterned emitters {Apparatus of electron lithography using patterned emitter}
    [20] The present invention relates to an exposure apparatus using a patterned emitter, and more particularly, to an exposure apparatus using a pyroelectric flat plate having a patterned metal thin film formed on its surface as an electron beam source.
    [21] An apparatus for performing ferroelectric switching lithography using a patterned emitter emits electrons by switching the patterned ferroelectric emitter to expose the electron resist on a substrate in a pattern such as an emitter, which is a desired pattern. Let it be Such ferroelectric switching emission has the disadvantage that the electrode formed on the emitter by the mask absorbs electrons. In addition, the emitter has a disadvantage that can not guarantee the electron emission when not connected to the electrode.
    [22] An exposure apparatus using a thermoionic electron source controls an electron beam by using electric and magnetic fields, but for a large area electron source, an apparatus for maintaining a radially spread electron beam in parallel is complicated and its structure is complicated.
    [23] On the other hand, a photocathode projection method capable of a large-area electron source has a problem of being extremely commercialized because it is extremely sensitive to contamination.
    [24] The present invention has been made to solve the above problems, and an object of the present invention is to provide an exposure apparatus for emitting electrons using an electron beam source without applying a high voltage.
    [25] Another object of the present invention is to provide an exposure apparatus that emits electrons by heating an electron beam source at a low temperature.
    [1] 1 is a cross-sectional view showing a schematic configuration of an electron emission exposure apparatus for 1: 1 projection according to an embodiment of the present invention.
    [2] FIG. 2 is a graph plotting the value of the current discharged from the pyroelectric plate depending on the presence or absence of a metal thin film on the pyroelectric plate made of LiNbO 3 .
    [3] Figure 3 is a graph plotting the value of the current emitted from the plate when the emitter deposited SiO 2 thin film on a plate made of LiNbO 3 is heated from room temperature to 120 ℃ and cooled to room temperature.
    [4] 4 is a cross-sectional view illustrating a schematic configuration of an x: 1 projection electron emission exposure apparatus according to another embodiment of the present invention.
    [5] 5A to 5E are views showing the manufacturing process of the patterned pyroelectric emitter which is the electron beam source according to the present invention.
    [6] 6 is a photograph showing an array in which a Ti metal thin film and a SiO 2 thin film are formed on a LiNbO 3 plate.
    [7] 7 is a sectional view of a modification of the electron beam source used in the above embodiments.
    [8] 8A through 8E are views illustrating a manufacturing process of a patterned pyroelectric emitter which is the electron beam source of FIG. 7.
    [9] 9 is a sectional view of another modification of the electron beam source used in the above embodiments.
    [10] 10A to 10D are views illustrating a manufacturing process of the electron beam source of FIG. 9.
    [11] Explanation of symbols on the main parts of the drawings
    [12] 10 emitter 11,111,211 pyroelectric flat plate
    [13] 12 Emitter mount 14,114,214 Metal thin film
    [14] 16,116,216: dielectric film 17: electron beam
    [15] 18: heat source 20: substrate
    [16] 22 substrate holder 24 electronic resist
    [17] 30, 30 ': magnet or DC magnetic field generator
    [18] 52: deflection plate 54: magnetic lens
    [19] 56: aperture 112: adhesion layer
    [26] In order to achieve the above object, the exposure apparatus for 1: 1 projection using the patterned emitter of the present invention is disposed at a predetermined interval with respect to the substrate holder, and a patterned metal thin film is formed on a surface facing the substrate holder. A pyroelectric emitter having a plate of pyroelectric material;
    [27] A heat source for heating the emitter; And
    [28] And a magnet or DC magnetic field generator disposed outside the emitter and the substrate holder to control a path of electrons emitted from the emitter.
    [29] The metal thin film is preferably formed on the pyroelectric plate exposed by the patterned dielectric film.
    [30] In addition, an adhesive layer having a predetermined thickness may be further formed between the pyroelectric plate and the dielectric film and the metal thin film.
    [31] Meanwhile, the dielectric film and the pyroelectric plate may be stacked below the metal thin film.
    [32] The heat source is a contact heating plate using electrical resistance heating or a remote heating device that generates infrared light.
    [33] The pyroelectric plate is made of a pyroelectric material selected from the group consisting of LiNbO 3 , LiTaO 3 , BaTiO 3 .
    [34] The dielectric film is preferably formed of a dielectric selected from the group consisting of SiO 2, Si 3 N 4 and TiO 2 .
    [35] The metal thin film is preferably made of a metal selected from the group consisting of Ti, Au, Pt, Ta and Al.
    [36] In addition, a pyroelectric material is disposed at a predetermined interval with respect to the substrate holder, and a patterned dielectric film is located on a surface facing the substrate holder, and a pyroelectric material having a flat plate of a pyroelectric material on which a metal thin film is formed on a surface exposed by the dielectric film. Emitters;
    [37] A heat source for heating the emitter; And
    [38] In order to control the path of electrons emitted from the emitter, a deflector disposed between the emitter and the substrate holder is provided.
    [39] The deflection apparatus includes deflection plates for deflecting electrons emitted from the emitter; And
    [40] Preferably, at least one magnetic lens for focusing the flat electrons.
    [41] Hereinafter, an electron emission exposure apparatus using a patterned pyroelectric emitter according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In this process, the thicknesses of layers or regions illustrated in the drawings are exaggerated for clarity.
    [42] FIG. 1 is a schematic cross-sectional view of an electron emission exposure apparatus for 1: 1 projection according to an embodiment of the present invention, and shows the substrate 20 having the electronic resist 24 formed on the substrate holder 22 together. .
    [43] Referring to FIG. 1, a substrate 20 coated with an electronic resist 24 is disposed on a substrate holder 22. The pyroelectric emitter 10, which emits an electron beam 17 when it is spaced a predetermined distance from the substrate 20 and receives heat from the outside, is mounted on the emitter mount 12. The pyroelectric emitter 10 has a dielectric film 16 patterned in a predetermined pattern on the pyroelectric flat plate 11, and is exposed by the patterned dielectric film 16 on the pyroelectric flat plate 11. The thin metal film 14 is formed in the region. A contact heating plate (not shown) for supplying heat to the pyroelectric flat plate 11 is provided on a surface opposite to the surface of the flat plate 11 facing the substrate 20. In addition, electromagnets or permanent magnets 30 and 30 ′ are disposed outside the flat plate 11 and the substrate holder 22 to control the path of the electron beams 17 emitted from the pyroelectric emitter 10. .
    [44] The pyroelectric plate 11 is made of a pyroelectric material such as LiNbO 3 , LiTaO 3 , BaTiO 3, etc., and emits electrons when it receives heat from the heat source 18.
    [45] FIG. 2 is a graph in which the value of the current emitted from the plate is plotted according to the presence or absence of a metal thin film on the plate when the 1 mm thick plate 11 made of LiNbO 3 is heated. Referring to FIG. 2, the electron emission from the LiNbO 3 plate itself in the process of heating the LiNbO 3 plate from room temperature 20 ° C. to 120 ° C. and then cooling it to room temperature is about 10 −14 A at about 120 ° C. It can be seen that it is released to pattern the electronic resist 24 on the substrate 20. However, when the platinum (Pt) thin film and the titanium (Ti) thin film were deposited on the pyroelectric plate 11, the electrons were hardly emitted even when the pyroelectric plate was heated. have. Therefore, since the metal thin film prevents electrons from being emitted in the region, electrons are emitted only from the pyroelectric plate coated with the dielectric film.
    [46] Since the dielectric layer 16 is patterned to pattern the metal thin film 14 on the plate 11, the dielectric layer 16 may be deposited using SiO 2, Si 3 N 4, or TiO 2 , which may be nano-sized patterned.
    [47] Figure 3 is a current emitted from the plate according to the plate temperature when the emitter is deposited on a 1 mm thick plate made of LiNbO 3 , the SiO 2 thin film of about 1000 Å thickness is heated from room temperature to 120 ℃ and then cooled to room temperature A graph plotting the values of. Referring to FIG. 3, electrons are not emitted from the emitter even when heated from room temperature to 20 ° C. to 60 ° C., while electrons are emitted from 60 ° C., electrons necessary for patterning the electron resist are emitted at 120 ° C.
    [48] The operation principle of the 1: 1 emission electron emission exposure apparatus having the above configuration is as follows. First, the substrate 20 coated with the electronic resist 24 is placed on the substrate holder 22, and then the emitter 10 is heated. At this time, the pyroelectric plate 11 is vacuumed, for example, 2 × 10 with the heat source 18.-5The electron beam 17 is emitted from the patterned dielectric film 16 when heated to a predetermined temperature, such as 120 ° C., while kept below torr. this The electron beam 17 is advanced by a direct current magnetic field of 0.8 Telsa to pattern the electron resist 24 on the substrate 20. At this time, the pattern of the emitter 10 formed by the metal thin film 14 is projected on the substrate in a 1: 1 ratio. The heating and cooling of the emitter 10 are repeated for repeated projection.
    [49] Although the pyroelectric emitter 10 is mounted to the emitter mount 12 in this embodiment, it is also possible to replace the emitter mount 12 with a heating plate.
    [50] In addition, the heat source 18 may use a remote heating device (not shown) for generating infrared rays.
    [51] Figure 4 shows a schematic cross-sectional view of an x: 1 projection electron emission exposure apparatus according to another embodiment of the present invention, and also shows a substrate with an electronic resist formed on the substrate holder, the same components as the above embodiment The same reference numerals are used and detailed description is omitted.
    [52] Referring to FIG. 4, a substrate 20 coated with an electronic resist 24 is disposed on the substrate holder 22. The pyroelectric emitter 10, which emits an electron beam 17 when it is spaced a predetermined distance from the substrate 20 and receives heat from the outside, is mounted on the emitter mount 12. The pyroelectric emitter 10 has a dielectric film 16 patterned in a predetermined pattern on the pyroelectric flat plate 11, and is exposed by the patterned dielectric film 16 on the pyroelectric flat plate 11. The thin metal film 14 is formed in the region. A contact heating plate (not shown) for supplying heat to the pyroelectric flat plate 11 is provided on a surface opposite to the surface of the flat plate 11 facing the substrate 20. And, between the pyroelectric plate 11 and the substrate holder 22, deflection plates 52 for directing the electron beams 17 emitted from the emitter 10, and on the flat plates 52 The magnetic lenses 54 arranged to focus on the deflected electron beams 17 and the electron beams 17 focused by the magnetic lens 54 to pass through the electron lenses 17, and electrons separated from the focused electrons. The filtering stop 56 is arranged.
    [53] The pyroelectric plate 11 is made of a pyroelectric material such as LiNbO 3 , LiTaO 3 , BaTiO 3, etc., and emits electrons when it receives heat from a heat source.
    [54] Since the dielectric layer 16 is patterned to pattern the metal thin film on the flat plate, the dielectric layer 16 may be deposited using SiO 2, Si 3 N 4, or TiO 2 , which enables nano-scale patterning.
    [55] The operating principle of the x: 1 electron emission exposure apparatus having the above configuration is as follows. First, the substrate 20 coated with the electronic resist 24 is placed on the substrate holder 22, and then the emitter 10 is heated. At this time, the pyroelectric plate 11 is vacuumed, for example, 2 x 10 as the heat source 18.-5The electron beam 17 is emitted from the patterned dielectric film 16 when heated to a predetermined temperature, such as 120 ° C., while kept below torr. this The electron beam 17 focuses the electron beam 17 spread by the deflection plate 52 and the magnetic lens 54 to reduce the size of the emitter pattern.
    [56] The emitter 10 is preferably heated to about 120 ° C. in order to obtain a sufficient electron irradiation amount. For repeated projection, heating and cooling of emitter 10 are repeated. In this case, for high throughput, a method of cooling only to about 60 ° C. and heating only to 120 ° C. is preferable.
    [57] In this embodiment, the electron beam emitting emitter is mounted to the emitter mount, but it is also possible to replace the emitter mount with a heating plate.
    [58] 5A to 5E are views illustrating a manufacturing process of a patterned pyroelectric emitter which is an electron beam source according to the present invention. The same reference numerals are used for components substantially the same as the above embodiments, and a detailed description thereof will be omitted.
    [59] First, as shown in FIG. 5A, a dielectric film 16 of about 1000 mW is deposited on the pyroelectric plate 11 having a predetermined thickness, for example, 1 mm. The pyroelectric plate 11 uses a pyroelectric material such as LiNbO 3 , LiTaO 3 , BaTiO 3, and the like, and the dielectric layer 16 may be formed by CVD or PVD of SiO 2, Si 3 N 4, or TiO 2 , which are easily patterned. Deposition by the method. Subsequently, a photoresist (R) is coated on the dielectric layer 16.
    [60] The photoresist R is then patterned through exposure and development using photolithography or electron beam lithography (see FIG. 5B).
    [61] Next, the dielectric layer 16 is etched and patterned by using the patterned photoresist R as a mask (see FIG. 5C).
    [62] Subsequently, a metal thin film 14 is deposited on the region of the pyroelectric plate 11 from which the dielectric film 16 is removed (see FIG. 5D). At this time, it is preferable to perform vacuum evaporation with poor step coverage. 5D shows that the metal thin film 14 is deposited on the pyroelectric plate 11. Here, as the metal thin film 14, Ti, Au, Pt, Ta, Al, or the like may be used, and about 500 Å thin film is formed.
    [63] Subsequently, removing the residual photoresist pattern completes the patterns of the dielectric film 16 and the metal thin film 14 (see FIG. 5E).
    [64] 6 is a photograph showing an array in which a Ti film and a SiO 2 thin film are formed on a LiNbO 3 plate using the above method.
    [65] 7 shows a cross-sectional view of a modification of the electron beam source used in the above embodiments.
    [66] Referring to FIG. 7, an adhesion layer 112 having a thickness of approximately 500 Å is formed on the pyroelectric flat plate 111. The patterned dielectric thin film 116, for example, SiO 2, Si 3 N 4, or TiO 2 is deposited on the adhesive layer 112. The metal thin film 114 is formed on the adhesive layer 112 exposed by the dielectric thin film 116. The adhesive layer 112 is durable and improves adhesion to the metal thin film 114 and the dielectric film 116 stacked thereon. As the adhesive layer 112, SiO 2, Si 3 N 4, or TiO 2 used as a dielectric thin film is used. The electron beam source of this structure is structurally stable, and its operation is as described in the above embodiments, and thus will be omitted.
    [67] 8A through 8E are views illustrating a manufacturing process of a patterned pyroelectric emitter which is the electron beam source of FIG. 7.
    [68] First, as shown in FIG. 8A, an adhesive layer 112 of about 500 mW is deposited on a pyroelectric plate 111 having a predetermined thickness, for example, 1 mm, and a dielectric film 116 of about 1000 mW is deposited thereon. do. The pyroelectric plate 111 uses a pyroelectric material such as LiNbO 3 , LiTaO 3 , BaTiO 3, and the like, and the dielectric layer 116 is formed by CVD or PVD of SiO 2, Si 3 N 4, or TiO 2 , which are easily patterned. Deposition by the method. Subsequently, the photoresist R is coated on the dielectric layer 116. In the case where the adhesive layer 112 and the dielectric film 116 are formed of the same material, it is preferable to form a film having a thickness of approximately 1000 to 1500 mm 3 at a time.
    [69] The photoresist R is then patterned through exposure and development using photolithography or electron beam lithography (see FIG. 8B).
    [70] Next, using the patterned photoresist R as a mask, the dielectric film 116 is patterned by etching RIE (reactive ion etching) (see FIG. 8C). Here, when the dielectric film 116 and the adhesive layer 112 are formed of the same material, the etching time is adjusted so that the thickness of the adhesive layer 112, for example, 500 μs, remains.
    [71] Next, a metal thin film 114 is deposited on the region of the pyroelectric flat plate 111 (see FIG. 8D). In this case, it is preferable to perform vacuum evaporation with poor step coverage. Here, as the metal thin film 114, Ti, Au, Pt, Ta, Al, etc. may be used, and about 500 Å thin film is formed.
    [72] Subsequently, when the residual photosensitive agent pattern is removed, the patterns of the metal thin film 114 and the dielectric film 116 are completed (see FIG. 8E).
    [73] Figure 9 shows a cross-sectional view of another variant of the electron beam source used in the above embodiments.
    [74] Referring to FIG. 9, a dielectric thin film 216, for example, SiO 2, Si 3 N 4, or TiO 2, having a thickness of about 1000 μs is deposited on the pyroelectric plate 211. The patterned metal thin film 214 is formed on the dielectric thin film 216. The dielectric thin film 216 plays the same role as the adhesive layer 112 of FIG. 7 and improves adhesion between the metal thin film 214 and the pyroelectric plate 211 formed thereon.
    [75] When heat is applied to such an electron beam source, an electron beam emitted from the pyroelectric flat plate 211 is emitted through the dielectric thin film 216 between the portions covered by the metal thin film 214, and the action thereof is as described in the above embodiments. The same thing is omitted.
    [76] 10A to 10D are views illustrating a manufacturing process of the electron beam source of FIG. 9.
    [77] First, as shown in FIG. 10A, a dielectric film 216 of about 1000 mW is deposited on a pyroelectric plate 211 having a predetermined thickness, for example, 1 mm. The pyroelectric plate 211 uses a pyroelectric material such as LiNbO 3 , LiTaO 3 , BaTiO 3, and the like, and the dielectric layer 216 may be formed by CVD or PVD of SiO 2, Si 3 N 4, or TiO 2 , which are easily patterned. Deposition by the method. Subsequently, the photoresist R is coated on the dielectric layer 216.
    [78] The photoresist R is then patterned through exposure and development using photolithography or electron beam lithography (see FIG. 10B). In addition, a LOR resist (not shown) and the photosensitive agent R may be sequentially laminated and used for the lift-off process mentioned later.
    [79] Next, in order to deposit the metal thin film 214 on the pyroelectric flat plate 211 region, it is preferable to perform vacuum evaporation with poor step coverage (see FIG. 10C). Here, as the metal thin film 214, Ti, Au, Pt, Ta, Al, or the like may be used. Subsequently, by stripping the residual photoresist pattern, the pattern of the metal thin film 214 is completed (see FIG. 10D).
    [80] After the lift-off process, the residual photosensitive agent R is removed by an ashing process.
    [81] As described above, in the electron emission exposure apparatus using the patterned emitter, the pyroelectric emitter uses the patterned metal thin film as a mask. When the emitter is heated, electrons are emitted from a portion of the emitter that is covered by the metal thin film, and electrons are emitted from the portion of the emitter that is covered by the dielectric film, so that the emitter pattern is projected onto the substrate. In order to prevent the spread of the electron beam emitted from the emitter, the electron beam can be controlled by using a magnet or a direct-current magnetic field generator or deflector, so that 1: 1 projection or x: 1 projection can be obtained. In addition, the pyroelectric emitter can emit electrons even at a low temperature of about 120 ° C. without applying a DC voltage.
    [82] Although the present invention has been described with reference to the embodiments with reference to the drawings, this is merely exemplary, it will be understood by those skilled in the art that various modifications and equivalent embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined only by the appended claims.
    权利要求:
    Claims (31)
    [1" claim-type="Currently amended] A pyroelectric emitter having a flat plate of a pyroelectric material disposed at a predetermined distance from the substrate holder, the dielectric film being patterned on a surface facing the substrate holder, and having a metal thin film formed on the surface exposed by the dielectric film. ;
    A heat source for heating the emitter; And
    And a magnet or DC magnetic field generator disposed outside the emitter and the substrate holder to control the path of electrons emitted from the emitter. .
    [2" claim-type="Currently amended] The method of claim 1,
    And an adhesive layer having a predetermined thickness between the pyroelectric plate, the dielectric layer, and the metal thin film.
    [3" claim-type="Currently amended] The method of claim 1,
    And the adhesive layer is formed of a dielectric material selected from the group consisting of SiO 2, Si 3 N 4, and TiO 2 .
    [4" claim-type="Currently amended] The method of claim 1,
    And said heat source is a contact heating plate using electric resistance heating.
    [5" claim-type="Currently amended] The method of claim 1,
    And the heat source is a remote heating device for generating infrared light.
    [6" claim-type="Currently amended] The method of claim 1,
    The pyroelectric flat plate is an electron emission exposure apparatus for 1: 1 projection, characterized in that made of a pyroelectric selected from the group consisting of LiNbO 3 , LiTaO 3 , BaTiO 3 .
    [7" claim-type="Currently amended] The method of claim 1,
    And the dielectric film is formed of a dielectric material selected from the group consisting of SiO 2, Si 3 N 4, and TiO 2 .
    [8" claim-type="Currently amended] The method of claim 1,
    And the metal thin film is made of a metal selected from the group consisting of Ti, Au, Pt, Ta, and Al.
    [9" claim-type="Currently amended] A pyroelectric emitter having a flat plate of a pyroelectric material disposed at a predetermined distance from the substrate holder, the patterned dielectric film being positioned on a surface facing the substrate holder, and having a metal thin film formed on the surface exposed by the dielectric film. ;
    A heat source for heating the emitter; And
    And a deflector disposed between the emitter and the substrate holder to control the path of electrons emitted from the emitter.
    [10" claim-type="Currently amended] The method of claim 9,
    And an adhesive layer having a predetermined thickness between the pyroelectric plate, the dielectric layer, and the metal thin film.
    [11" claim-type="Currently amended] The method of claim 9,
    And the adhesive layer is formed of a dielectric material selected from the group consisting of SiO 2, Si 3 N 4, and TiO 2 .
    [12" claim-type="Currently amended] The method of claim 10, wherein the biasing device,
    Deflection plates for deflecting electrons emitted from the emitter; And
    And at least one magnetic lens for focusing the flattened electrons.
    [13" claim-type="Currently amended] The method of claim 10,
    And said heat source is a contact heating plate using electrical resistance heating.
    [14" claim-type="Currently amended] The method of claim 10,
    And the heat source is a remote heating device for generating infrared light.
    [15" claim-type="Currently amended] The method of claim 10,
    And the pyroelectric flat plate is made of a pyroelectric material selected from the group consisting of LiNbO 3 , LiTaO 3 , and BaTiO 3 .
    [16" claim-type="Currently amended] The method of claim 10,
    And the dielectric film is formed of a dielectric material selected from the group consisting of SiO 2, Si 3 N 4, and TiO 2 .
    [17" claim-type="Currently amended] The method of claim 10,
    And the metal thin film is made of a metal selected from the group consisting of Ti, Au, Pt, Ta, and Al.
    [18" claim-type="Currently amended] A pyroelectric emitter disposed at a predetermined interval with respect to the substrate holder, wherein a patterned metal thin film is formed on a surface facing the substrate holder, and a lower portion of the metal thin film includes a flat plate made of a pyroelectric material;
    A heat source for heating the emitter; And
    And a magnet or DC magnetic field generator disposed outside the emitter and the substrate holder to control the path of electrons emitted from the emitter. .
    [19" claim-type="Currently amended] The method of claim 18,
    And said heat source is a contact heating plate using electric resistance heating.
    [20" claim-type="Currently amended] The method of claim 18,
    And the heat source is a remote heating device for generating infrared light.
    [21" claim-type="Currently amended] The method of claim 18,
    The pyroelectric flat plate is an electron emission exposure apparatus for 1: 1 projection, characterized in that made of a pyroelectric selected from the group consisting of LiNbO 3 , LiTaO 3 , BaTiO 3 .
    [22" claim-type="Currently amended] The method of claim 18,
    And the dielectric film is formed of a dielectric material selected from the group consisting of SiO 2, Si 3 N 4, and TiO 2 .
    [23" claim-type="Currently amended] The method of claim 18,
    And the metal thin film is made of a metal selected from the group consisting of Ti, Au, Pt, Ta, and Al.
    [24" claim-type="Currently amended] A pyroelectric emitter disposed at a predetermined interval with respect to the substrate holder, wherein a patterned metal thin film is formed on a surface facing the substrate holder, and a lower portion of the metal thin film includes a flat plate made of a pyroelectric material;
    A heat source for heating the emitter; And
    And a deflector disposed between the emitter and the substrate holder to control the path of electrons emitted from the emitter.
    [25" claim-type="Currently amended] The method of claim 24,
    And an adhesive layer having a predetermined thickness between the pyroelectric plate, the dielectric layer, and the metal thin film.
    [26" claim-type="Currently amended] The method of claim 24, wherein the biasing device,
    Deflection plates for deflecting electrons emitted from the emitter; And
    And at least one magnetic lens for focusing the flattened electrons.
    [27" claim-type="Currently amended] The method of claim 24,
    And said heat source is a contact heating plate using electrical resistance heating.
    [28" claim-type="Currently amended] The method of claim 24,
    And the heat source is a remote heating device for generating infrared light.
    [29" claim-type="Currently amended] The method of claim 24,
    And the pyroelectric flat plate is made of a pyroelectric material selected from the group consisting of LiNbO 3 , LiTaO 3 , and BaTiO 3 .
    [30" claim-type="Currently amended] The method of claim 24,
    And the dielectric film is formed of a dielectric material selected from the group consisting of SiO 2, Si 3 N 4, and TiO 2 .
    [31" claim-type="Currently amended] The method of claim 24,
    And the metal thin film is made of a metal selected from the group consisting of Ti, Au, Pt, Ta, and Al.
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    同族专利:
    公开号 | 公开日
    KR100493162B1|2005-06-02|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-07-15|Priority to KR20020041248
    2002-07-15|Priority to KR1020020041248
    2002-11-14|Application filed by 삼성전자주식회사
    2003-05-16|Priority claimed from CNB031311717A
    2004-01-24|Publication of KR20040007200A
    2005-06-02|Application granted
    2005-06-02|Publication of KR100493162B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR20020041248|2002-07-15|
    KR1020020041248|2002-07-15|
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