• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
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    • 专利摘要:
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field type liquid crystal display device and a method of manufacturing the same so as to increase the height of the common electrode and the pixel electrode to increase the portion of the liquid crystal, thereby lowering power consumption and increasing the gap between the electrodes. A plurality of gate wirings and data wirings intersecting to define pixel regions, thin film transistors formed at intersections of the gate wirings and data wirings, and formed at regular intervals on the pixel region in the same direction as the data wirings; A plurality of first and second insulating film patterns, a pixel electrode formed on the plurality of first insulating film patterns connected to the thin film transistor, and a plurality of second insulating film patterns having a predetermined distance from the pixel electrode. Characterized in that it comprises a common electrode formed.
    公开号:KR20040003327A
    申请号:KR1020020037993
    申请日:2002-07-02
    公开日:2004-01-13
    发明作者:이동훈；조소행
    申请人:엘지.필립스 엘시디 주식회사；
    IPC主号:
    专利说明:

    Transverse electric field type liquid crystal display device and manufacturing method thereof {NPLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME}
    [20] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display, and more particularly, to a liquid crystal display of a transverse electric field method (hereinafter referred to as IPS) and a method of manufacturing the same suitable for driving area expansion and simplifying the process. will be.
    [21] As the information society develops, the demand for display devices is increasing in various forms.In recent years, liquid crystal display (LCD), plasma display panel (PDP), electro luminescent display (ELD), and vacuum fluorescent display (VFD) have been developed. Various flat panel display devices have been studied, and some are already used as display devices in various devices.
    [22] Among them, LCD is the most widely used as a substitute for CRT (Cathode Ray Tube) for the use of mobile image display device because of the excellent image quality, light weight, thinness, and low power consumption, and mobile type such as monitor of notebook computer. In addition, it is being developed in various ways, such as a television for receiving and displaying broadcast signals, and a monitor of a computer.
    [23] As described above, although various technical advances have been made in order for the liquid crystal display device to serve as a screen display device in various fields, the task of improving the image quality as the screen display device has many advantages and disadvantages.
    [24] Therefore, in order to use a liquid crystal display device in various parts as a general screen display device, the key to development is how much high definition images such as high definition, high brightness, and large area can be realized while maintaining the characteristics of light weight, thinness, and low power consumption. It can be said.
    [25] Such a liquid crystal display device may be broadly divided into a liquid crystal panel displaying an image and a driving unit for applying a driving signal to the liquid crystal panel, wherein the liquid crystal panel includes first and second glass substrates having a space and are bonded to each other; It consists of a liquid crystal layer injected between the said 1st, 2nd glass substrate.
    [26] The first glass substrate (TFT array substrate) may include a plurality of gate wirings arranged in one direction at a predetermined interval, a plurality of data wirings arranged at regular intervals in a direction perpendicular to the respective gate wirings, and A plurality of pixel electrodes formed in a matrix form in each pixel region defined by crossing each of the gate wirings and the data wirings and a plurality of thin films that transmit signals of the data wirings to the pixel electrodes by being switched by signals of the gate wirings The transistor is formed.
    [27] The second glass substrate (color filter substrate) includes a black matrix layer for blocking light in portions other than the pixel region, an R, G, B color filter layer for expressing color colors, and a common electrode for implementing an image. Is formed. Of course, the common electrode is formed on the first glass substrate in the transverse electric field type liquid crystal display device.
    [28] The first and second glass substrates are bonded by an actual material having a predetermined space and a liquid crystal injection hole by a spacer, and a liquid crystal is injected between the two substrates.
    [29] In this case, in the liquid crystal injection method, the liquid crystal is injected between the two substrates by osmotic pressure when the liquid crystal injection hole is immersed in the liquid crystal container by maintaining the vacuum state between the two substrates bonded by the reality. When the liquid crystal is injected as described above, the liquid crystal injection hole is sealed with a sealing material.
    [30] On the other hand, the driving principle of the liquid crystal display device as described above uses the optical anisotropy and polarization of the liquid crystal.
    [31] Since the liquid crystal is thin and long in structure, the liquid crystal has a direction in the arrangement of molecules, and the liquid crystal may be artificially applied to control the direction of the molecular arrangement.
    [32] Accordingly, when the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light polarized by optical anisotropy may be arbitrarily modulated to express image information.
    [33] Such liquid crystals may be classified into positive liquid crystals having a positive dielectric anisotropy and negative liquid crystals having a negative dielectric anisotropy according to an electrical specific classification, and liquid crystal molecules having a positive dielectric anisotropy are long axes of liquid crystal molecules in a direction in which an electric field is applied. The liquid crystal molecules arranged in parallel and having negative dielectric anisotropy are arranged perpendicularly to the direction in which the electric field is applied and the major axis of the liquid crystal molecules.
    [34] 1 is an exploded perspective view illustrating a part of a general TN liquid crystal display device.
    [35] As shown in FIG. 1, the lower substrate 1 and the upper substrate 2 bonded to each other with a predetermined space, and the liquid crystal layer 3 injected between the lower substrate 1 and the upper substrate 2 are composed of. It is.
    [36] More specifically, the lower substrate 1 has a plurality of gate lines 4 arranged in one direction at regular intervals to define the pixel region P, and in a direction perpendicular to the gate lines 4. A plurality of data lines 5 are arranged at regular intervals, and pixel electrodes 6 are formed in each pixel region P where the gate lines 4 and the data lines 5 intersect, and each of the gate lines The thin film transistor T is formed at the portion where (4) and the data wiring 5 intersect.
    [37] The upper substrate 2 includes a black matrix layer 7 for blocking light in portions other than the pixel region P, an R, G, and B color filter layer 8 for expressing color colors, and an image. The common electrode 9 is formed to implement the.
    [38] The thin film transistor T may include a gate electrode protruding from the gate line 4, a gate insulating film (not shown) formed on a front surface, an active layer formed on the gate insulating film above the gate electrode, and the data. A source electrode protruding from the wiring 5 and a drain electrode are provided so as to face the source electrode.
    [39] The pixel electrode 6 uses a transparent conductive metal having a relatively high light transmittance, such as indium-tin-oxide (ITO).
    [40] In the liquid crystal display device configured as described above, the liquid crystal layer 3 positioned on the pixel electrode 6 is aligned by a signal applied from the thin film transistor T, and the liquid crystal layer 3 is aligned with the alignment degree of the liquid crystal layer 3. Accordingly, the image can be expressed by controlling the amount of light passing through the liquid crystal layer 3.
    [41] As described above, the liquid crystal panel drives the liquid crystal by an electric field applied up and down, and has excellent characteristics such as transmittance and aperture ratio, and the common electrode 9 of the upper substrate 2 serves as a ground to discharge static electricity. It is possible to prevent the destruction of the liquid crystal cell.
    [42] However, the liquid crystal drive by the electric field applied up-down has a disadvantage that the viewing angle characteristics are not excellent.
    [43] Accordingly, in order to overcome the above disadvantages, a new technology, namely, a liquid crystal display device of IPS, has been proposed.
    [44] 2 is a schematic cross-sectional view showing a liquid crystal display of a general IPS.
    [45] As shown in FIG. 2, the pixel electrode 12 and the common electrode 13 are formed on the lower substrate 11 on the same plane.
    [46] In addition, the liquid crystal layer 14 formed between the lower substrate 11 and the upper substrate 15 bonded to the lower substrate 11 may be disposed between the pixel electrode 12 and the common electrode 13 on the lower substrate 11. It works by electric field.
    [47] 3A to 3B are diagrams illustrating phase transitions of liquid crystals when voltages are turned on and off in the IPS mode.
    [48] That is, FIG. 3A shows an off state in which no transverse electric field is applied to the pixel electrode 12 or the common electrode 13, so that the phase change of the liquid crystal layer 14 does not occur. For example, the pixel electrode 12 and the common electrode 13 are basically shifted by 45 ° in the horizontal direction.
    [49] FIG. 3B is an on state in which a transverse electric field is applied to the pixel electrode 12 and the common electrode 13, and a phase shift of the liquid crystal layer 14 occurs, and is about 45 ° compared to the off state of FIG. 3A. It can be seen that the horizontal direction of the pixel electrode 12 and the common electrode 13 and the twist direction of the liquid crystal have a twist angle.
    [50] As described above, in the liquid crystal display of the IPS, both the pixel electrode 12 and the common electrode 13 exist on the same plane.
    [51] An advantage of the transverse electric field method is that a wide viewing angle is possible. That is, when the liquid crystal display device is viewed from the front, the liquid crystal display device may be visible in the up / down / left / right directions at about 70 °.
    [52] In addition, there is an advantage that the manufacturing process is simpler and the color shift according to the viewing angle is smaller than that of the liquid crystal display device.
    [53] However, since the common electrode 13 and the pixel electrode 12 exist on the same plane, there is a disadvantage in that transmittance and aperture ratio due to light are reduced.
    [54] In addition, there is a disadvantage in that the response time due to the driving voltage must be improved and the cell gap is made uniform because the misalign margin of the cell gap is small.
    [55] That is, the transverse electric field type liquid crystal display device has the advantages and disadvantages as described above can be selected according to the user's use.
    [56] 4A and 4B are perspective views showing the operation of the liquid crystal display of the IPS in the off state and the on state, respectively.
    [57] As shown in FIG. 4A, when no transverse electric field voltage is applied to the pixel electrode 12 or the common electrode 13, the alignment direction of the liquid crystal molecules 16 is the same as that of the initial alignment layer (not shown). Is arranged.
    [58] As shown in FIG. 4B, when the transverse electric field voltage is applied to the pixel electrode 12 and the common electrode 13, the alignment direction 16 of the liquid crystal molecules is arranged in the direction 17 to which the electric field is applied. Can be.
    [59] Hereinafter, a liquid crystal display and a manufacturing method of a conventional IPS will be described with reference to the accompanying drawings.
    [60] 5 is a plan view showing a liquid crystal display of a conventional IPS.
    [61] As shown in FIG. 5, in order to define the pixel region P on the transparent lower substrate 21, a plurality of gate lines 22 are arranged in one direction at regular intervals and perpendicular to the gate lines 22. A plurality of data wires 25 are arranged at regular intervals in one direction.
    [62] A common wiring 29 is arranged in the pixel region P in parallel with the gate wiring 22, and a plurality of pixel regions P are defined by crossing the gate wiring 22 and the data wiring 25. The thin film transistor T is formed.
    [63] The thin film transistor T is formed on the gate electrode 22a which protrudes from the gate wiring 22, the gate insulating film (not shown) formed on the front surface, and the gate insulating film on the gate electrode 22a. And a source electrode 25a formed to protrude from the data line 25 and a drain electrode 25b formed at regular intervals from the source electrode 25a.
    [64] A plurality of pixel electrodes 28 are formed in the pixel region P, the plurality of pixel electrodes 28 having one end connected to the drain electrode 25b of the thin film transistor T while being connected to each other at regular intervals in parallel with the data line 25. In the pixel region P, a plurality of common electrodes 29a protruding from the common wiring 29 are formed.
    [65] FIG. 6 is a structural cross-sectional view of a conventional IPS liquid crystal display device taken along line II of FIG. 5.
    [66] As shown in FIG. 6, a gate electrode 22a formed to protrude from the gate wiring 22 in a predetermined region on the transparent lower substrate 21 and a common electrode having a predetermined distance from the gate electrode 22a. A gate insulating film 23 formed of a material such as SiNx or SiOx on the entire surface of the lower substrate 21 including the gate electrode 22a, and the gate insulating film (29a) corresponding to the gate electrode 22a. 23, an active layer 24 formed in an island shape, and a source electrode 25a and the source formed to protrude from the data line 25 of FIG. 5 while a predetermined portion overlaps the active layer 24. A drain electrode 25b and a pixel electrode 28 formed at regular intervals from the electrode 25a, and a protective film 26 formed of a material of SiNx or SiOx on the entire surface of the lower substrate 21.
    [67] The common electrode 29a in the pixel region P is connected to the common wiring 29, and the pixel electrode 28 is connected to the drain electrode 25b of the thin film transistor formed on the active layer 24. .
    [68] In addition, an alignment film (not shown) made of polyimide is formed on the protective film 26.
    [69] On the other hand, the lower substrate 21 formed as described above and the upper substrate 31 corresponding to the black matrix layer 32 to prevent light leakage and the color filter element of R, G, B to implement the color The color filter layer 33 and the overcoat layer 34 are laminated one by one.
    [70] The liquid crystal layer 35 is formed between the upper substrate 31 and the upper substrate 21.
    [71] On the other hand, a plurality of spacers 36 having a predetermined size are formed to maintain the gap between the lower substrate 21 and the upper substrate 31 precisely and uniformly.
    [72] 7A to 7E are cross-sectional views illustrating a method of manufacturing a liquid crystal display device of a conventional IPS according to line II of FIG. 5.
    [73] As illustrated in FIG. 7A, a conductive metal is deposited on the transparent lower substrate 21, and the gate wiring 22 (FIG. 5) extending in one direction through a photo and etching process and protrudes from the gate wiring 22. The common wiring (29 of FIG. 5) having the same distance from the gate electrode 22a and the gate electrode 22a and having the same direction as the gate wiring 22, and the common electrode protruding from both sides of the common wiring 29. (29a) is formed.
    [74] The conductive metal may be a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W).
    [75] As shown in FIG. 7B, a gate insulating film 23 is formed on the entire surface of the lower substrate 21 including the gate electrode 22a and the common electrode 29a, and an active layer (eg, an active layer) is formed on the gate insulating film 23. 24).
    [76] Here, the gate insulating film 23 may use a silicon nitride film (SiNx) or a silicon oxide film (SiO 2 ), and the active layer 24 may be a stack of amorphous silicon and amorphous silicon containing impurities, although not shown in the drawing. It is structured.
    [77] Subsequently, the active layer 24 is selectively removed through a photo and etching process to form an active layer 24 having an island shape on the gate insulating layer 23 on the gate electrode 22a.
    [78] As shown in FIG. 7C, a conductive metal is deposited on the entire surface of the lower substrate 21 including the active layer 24 and spaced apart at predetermined intervals through a photo and etching process (25 of FIG. 5), The source electrode 25a, the drain electrode 25b, and the pixel electrode 28 are formed, respectively.
    [79] The source electrode 25a and the drain electrode 25b may be formed on the active layer 24, and the pixel electrode 28 may be predetermined with the common electrode 29a on the gate insulating layer 23. Form spaced apart.
    [80] The drain electrode 25b and the pixel electrode 28 are electrically connected to each other.
    [81] As shown in FIG. 7D, a protective film 26 is formed on the entire surface of the lower substrate 21.
    [82] The protective layer 26 is formed to protect the active layer 24 from external moisture or foreign matter.
    [83] Subsequently, an alignment layer (not shown) made of polyimide is formed on the entire surface of the lower substrate 21 including the pixel electrode 28 and the common electrode 29a.
    [84] As shown in FIG. 7E, spacers 36 are scattered on the lower substrate 21.
    [85] Subsequently, a color filter layer including a black matrix layer 32 for preventing light leakage on the lower substrate 21 and an upper substrate 31 corresponding to the lower substrate 21 and color filter elements of R, G, and B for implementing colors ( 33) and the overcoat layer 34 are sequentially formed, and a liquid crystal layer 35 is formed between the lower substrate 21 and the upper substrate 31.
    [86] In this case, the spacer 36 has a constant size spacer 36 to maintain the gap between the upper substrate 31 and the lower substrate 21 precisely and uniformly.
    [87] Therefore, when dispersing the spacer 36, it should be dispersed at a uniform density with respect to the lower substrate 21, and the spreading method is largely a wet dispersion method in which the spacer 36 is mixed and sprayed with alcohol or the like, and a dry scattering method in which only the spacer is distributed. Can be divided by law.
    [88] In addition, dry dispersion is divided into electrostatic dispersion using static electricity and antistatic dispersion using gas pressure, and electrostatic scattering is widely used in liquid crystal cells having a structure susceptible to static electricity.
    [89] Subsequently, when the diffusion process of the spacers 36 is completed on the lower substrate 21, the upper substrate 31, which is a color filter substrate, and the lower substrate 21, which is a thin film transistor array substrate, are bonded to each other.
    [90] Here, in the bonding process of the upper substrate 31 and the lower substrate 21, the gap between the upper substrate 31 and the lower substrate 21 is precisely and uniformly maintained as the spacer 30 and a sealing material (not shown) on one side. Is supported to bond the upper substrate 31 and the lower substrate 21 to each other.
    [91] The liquid crystal layer 35 is formed by injecting liquid crystal between the lower substrate 21 and the upper substrate 31 in a vacuum state.
    [92] The liquid crystal injection process injects the space located between the upper substrate 31 and the lower substrate 21 formed by the spacer 36 using a pressure difference between inside and outside to remove bubbles and proceed with a defoaming process.
    [93] Subsequently, after the UV curable resin, which is usually used, is applied with a dispenser, the injection hole is sealed by irradiating ultraviolet rays.
    [94] As described above, the IPS liquid crystal display has a structure in which the common electrode 29a and the pixel electrode 28 are formed on the same substrate 21, and have a great advantage in improving the viewing angle. .
    [95] However, the above-described conventional IPS liquid crystal display device and its manufacturing method have the following problems.
    [96] That is, since the portion of the liquid crystal driven by the transverse electric field is small because the thickness of the common electrode and the pixel electrode is small, the driving voltage is increased, the power consumption is increased, and the gap between the electrodes is narrowed, thereby decreasing the aperture ratio.
    [97] In addition, in the bonding process of the upper substrate and the lower substrate, the process is complicated by performing a separate spacer forming process to precisely and uniformly form a gap between the upper substrate and the lower substrate.
    [98] The present invention has been made to solve the above-mentioned problems, and the height of the common electrode and the pixel electrode is increased to increase the potion of the liquid crystal, thereby lowering the power consumption and widening the interval between the electrodes to improve the aperture ratio. An object of the present invention is to provide an electric field type liquid crystal display device and a method of manufacturing the same.
    [99] Another object of the present invention is to provide a transverse electric field type liquid crystal display device and a method of manufacturing the same, which simplify the process.
    [1] 1 is an exploded perspective view showing a part of a typical TN liquid crystal display device
    [2] Figure 2 is a schematic cross-sectional view showing a liquid crystal display of a general IPS
    [3] 3A to 3B are diagrams illustrating phase transitions of liquid crystals when voltage on / off is performed in IPS mode.
    [4] 4A and 4B are perspective views showing the operation of the IPS mode LCD in the off and on states, respectively.
    [5] 5 is a plan view showing a liquid crystal display of a conventional IPS
    [6] FIG. 6 is a structural cross-sectional view of a liquid crystal display of IPS taken along line II of FIG.
    [7] 7A to 7E are cross-sectional views illustrating a method of manufacturing a liquid crystal display device of a conventional IPS according to line II of FIG. 5.
    [8] 8A and 8B are plan views illustrating a liquid crystal display of IPS according to the present invention.
    [9] 9A and 9B are plan views illustrating a liquid crystal display of an IPS according to another embodiment of the present invention.
    [10] 10 is a cross-sectional view of a structure of a transverse electric field type liquid crystal display device according to the present invention along lines VI-VI of FIGS. 8A and 8B.
    [11] 11 is a cross-sectional view showing a transverse electric field type liquid crystal display device according to the present invention.
    [12] 12A to 12I are cross-sectional views illustrating a method of manufacturing a liquid crystal display device of an IPS according to the present invention along lines VI-VI of FIGS. 8A and 8B.
    [13] Explanation of symbols for the main parts of the drawings
    [14] 41: lower substrate 42: gate wiring
    [15] 43 gate insulating film 44 active layer
    [16] 45: data wiring 46: protective film
    [17] 47: insulating film 48: contact hole
    [18] 49 pixel electrode 50 common electrode
    [19] 51 liquid crystal layer 52 upper substrate
    [100] In order to achieve the above object, a transverse electric field type liquid crystal display device according to the present invention includes a plurality of gate wires and data wires intersecting to define a pixel area, and a thin film formed at an intersection of the gate wires and data wires. A transistor, a plurality of first and second insulating film patterns formed on the pixel region at regular intervals in the same direction as data lines, a pixel electrode formed on the first insulating film pattern while being connected to the thin film transistor, And a common electrode formed on the second insulating layer pattern with a predetermined distance from the pixel electrode.
    [101] The pixel electrode and the common electrode are zigzag.
    [102] In addition, the liquid crystal display device of the transverse electric field method according to the present invention for achieving the above object has a thin film transistor formed on the first substrate, and a contact hole to expose a predetermined portion of the thin film transistor of the first substrate A protective film formed on the entire surface, a plurality of first and second insulating film patterns formed on the protective film, a pixel electrode formed on the protective film and the first insulating film pattern while being connected to the thin film transistor through the contact hole; A common electrode formed on the second insulating film pattern and the protective film at a predetermined distance from the pixel electrode, a second substrate bonded to correspond to the first substrate, and a liquid crystal formed between the first substrate and the second substrate It is characterized by including a layer.
    [103] The first and second insulating film patterns may be formed of any one of acrylic, polyimide, BCB, silicon oxide film, and silicon nitride film.
    [104] In addition, a method of manufacturing a transverse electric field type liquid crystal display device according to the present invention includes forming a thin film transistor on a first substrate, forming a protective film on the entire surface of the first substrate, and forming an insulating film on the protective film. Forming and selectively patterning a plurality of first and second insulating film patterns on the passivation layer, selectively removing the passivation layer to expose a predetermined portion of the thin film transistor, and forming a contact hole; Forming a pixel electrode on the first insulating layer pattern while being connected to the thin film transistor through a hole, and forming a common electrode on the second insulating layer pattern at a predetermined interval from the pixel electrode; and forming the common electrode on the first substrate and the second substrate. And forming a liquid crystal layer between the substrates.
    [105] The liquid crystal layer is formed by dropping a liquid crystal, and the insulating film is formed using any one of acryl, polyimide, BCB, silicon oxide film, and silicon nitride film.
    [106] Hereinafter, a transverse electric field type liquid crystal display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.
    [107] 8A and 8B are plan views illustrating a liquid crystal display of IPS according to the present invention.
    [108] As shown in FIG. 8A, a plurality of gate wires 42 are arranged in one direction at regular intervals to define a pixel area on the transparent lower substrate 41 and in a direction perpendicular to the gate wire 42. A plurality of data lines 45 are arranged at regular intervals.
    [109] A plurality of thin film transistors are formed in each pixel area defined by the gate line 42 and the data line 45 crossing each other.
    [110] The thin film transistor may include a gate electrode 42a protruding from the gate wiring 42, a gate insulating film (not shown) formed on the front surface, and an active layer formed on the gate insulating film above the gate electrode 42a. 44 and a source electrode 45a which protrudes from the data line 45 and overlaps the active layer 44 with a predetermined portion, and a drain electrode formed at a predetermined interval from the source electrode 45a. 45b).
    [111] Subsequently, a plurality of first and second insulating layer patterns 47a and 47b are formed in the pixel area at regular intervals in the same direction as the data line 45.
    [112] The pixel electrode 49 and the common electrode may be spaced apart from each other by surrounding the first and second insulating layer patterns 47a and 47b on the pixel area defined by the gate line 42 and the data line 45 intersecting each other. 50) is formed on the same plane.
    [113] 8B, the common electrode 50, the pixel electrode 49, and the first and second insulating layer patterns 47a and 47b may be formed in a zigzag form.
    [114] 9A and 9B are plan views illustrating a liquid crystal display device of an IPS according to another embodiment of the present invention.
    [115] As shown in Figs. 9A and 9B, the thin film transistor T can be formed in an English letter "U" shape. That is, it includes a U-shaped source electrode 45a, a drain electrode 45b spaced apart from the source electrode 45a at regular intervals, and a pixel electrode 49 electrically connected to the drain electrode 45b. have.
    [116] FIG. 10 is a cross-sectional view of a structure of a transverse electric field type liquid crystal display device according to the present invention taken along line VI-VI of FIGS. 8A and 8B.
    [117] As illustrated in FIG. 10, a gate electrode 42a formed in a predetermined region on the transparent lower substrate 41 and a gate insulating film 43 formed on the entire surface of the lower substrate 41 including the gate electrode 42a. And an active layer 44 formed in an island shape on the gate insulating layer 43 corresponding to the gate electrode 42a, and spaced apart from each other at a predetermined interval while overlapping a predetermined portion of the active layer 44. A source film 45a and a drain electrode 45b, a protective film 46 formed on the entire surface of the lower substrate 41 with contact holes so that a predetermined portion of the surface of the drain electrode 45b is exposed, and the drain electrode A plurality of first and second insulating film patterns 47a and 47b formed at regular intervals on the passivation layer 46 and spaced apart from the predetermined interval 45b, and the drain electrode 45b through the contact hole. Electrically connected and the protective film 46 and the first The pixel electrode 49 formed on the insulating film pattern 47a and the second insulating film pattern 47b and the protective film 46 are formed on the same plane as the pixel electrode 49 and have a predetermined distance from the pixel electrode. It consists of the common electrode 50 formed on it.
    [118] The gate electrode 42a, the active layer 44, the source electrode 45a, and the drain electrode 45b form one thin film transistor.
    [119] 11 is a cross-sectional view showing a transverse electric field type liquid crystal display device according to the present invention.
    [120] As shown in FIG. 10, the lower substrate 41 configured as shown in FIG. 10 is bonded to the upper substrate 52 on which the black matrix layer and the color filter layer are formed, and the first and second insulating layer patterns 47a and 47b are formed. As a result, the liquid crystal layer 51 is provided in the space between the upper substrate 52 and the lower substrate 41.
    [121] 12A to 12I are cross-sectional views illustrating a method of manufacturing a liquid crystal display device of IPS according to the present invention along lines VI-VI of FIGS. 8A and 8B.
    [122] As illustrated in FIG. 12A, a gate pad (not shown) is formed by depositing a conductive metal on a transparent lower substrate 41 and patterning the conductive metal using a photo and etching process so that one end thereof is wide in a predetermined area. ) And a gate wiring 42 extending in one direction from the gate pad and a gate electrode 42a protruding in one direction from the gate wiring 42.
    [123] The conductive metal may be a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W).
    [124] As shown in FIG. 12B, a gate insulating film 43 is formed on the entire surface of the lower substrate 41 on which the gate electrode 42a is formed.
    [125] The gate insulating layer 43 may use a silicon nitride layer (SiNx) or a silicon oxide layer (SiO 2 ).
    [126] As shown in FIG. 12C, an active layer 44 made of a semiconductor layer (amorphous silicon + impurity amorphous silicon) is formed on the gate insulating film 43.
    [127] Subsequently, the active layer 44 is patterned by photo and etching processes to form an active layer 44 having an island shape on the gate electrode 42a.
    [128] As shown in FIG. 12D, a conductive metal is deposited on the entire surface of the lower substrate 41 on which the active layer 44 is formed, and patterned through photo and etching processes to intersect the gate wiring (42 in FIG. 8A). A plurality of data lines (45 in FIG. 8A) formed in one direction and formed with source pads (not shown) at ends, source electrodes 45a protruding in one direction from the data lines, and spaced apart from each other at predetermined intervals The drain electrode 45b is formed.
    [129] As shown in FIG. 12E, the inorganic film of the silicon oxide film (SiOx) and the silicon nitride film (SiNx), BCB, acryl, and polyimide are formed on the entire surface of the lower substrate 41 on which the source electrode 45a and the drain electrode 45b are formed. An organic insulating material such as mid is deposited to form a protective film 46, and an insulating film 47 is formed on the protective film 46.
    [130] The passivation layer 46 is formed to protect the active layer 44 from external moisture or foreign matter, and in the case of forming an organic insulating material, the common electrode and the pixel electrode may overlap the data line. Can improve.
    [131] On the other hand, the insulating film 47 is formed to a thickness of 3 ~ 4㎛ using any one of acryl, polyimide, Benzo Cyclo Butene (BCB), silicon oxide film, silicon nitride film.
    [132] As shown in FIG. 12F, the plurality of first and second insulating layer patterns 47a and 47b having a predetermined interval on the passivation layer 46 by selectively removing the insulating layer 47 through the photo and etching processes. To form.
    [133] Here, the first and second insulating layer patterns 47a and 47b are formed in the pixel region other than the thin film transistors having the same direction as the data line 45 as shown in FIGS. 8A and 8B.
    [134] Meanwhile, the first and second insulating layer patterns 47a and 47b serve as spacers formed to precisely and uniformly maintain a gap between the upper substrate and the lower substrate.
    [135] As shown in FIG. 12G, a contact hole 48 is formed by selectively removing the passivation layer 46 through a photo and etching process so that the surface of the drain electrode 45b is partially exposed.
    [136] When the contact hole 48 is formed, the gate pad and the source pad portion are also exposed.
    [137] As shown in FIG. 12H, a conductive metal is deposited on the entire surface of the lower substrate 41 including the contact hole 48, and the conductive metal is selectively removed through a photo and etching process to remove the conductive electrode. Contacting the second insulating film while forming a pixel electrode 49 covering the first insulating film pattern 47a and being spaced apart from the pixel electrode 49 at a predetermined interval on the same plane as the pixel electrode 49. The common electrode 50 surrounding the pattern 47b is formed.
    [138] As shown in FIG. 12I, an alignment layer (not shown) made of polyimide or a photo-alignment material is formed on the entire surface of the lower substrate 41 including the pixel electrode 49 and the common electrode 50. .
    [139] Here, the alignment layer made of polyimide is determined by mechanical rubbing, and the photoreactive material made of polyvinylcinnamate based material or polysiloxane based material is oriented by irradiation with light such as ultraviolet rays. This is determined. At this time, the orientation direction is determined by the irradiation direction of the light or the property of the irradiated light, that is, the polarization direction.
    [140] Subsequently, a liquid crystal is dropped on the lower substrate 41 to form a liquid crystal layer 51. The liquid crystal layer 51 may be formed on the upper substrate 51.
    [141] Then, an upper substrate 52 which is a color filter substrate is prepared.
    [142] Here, the liquid crystal layer 51 may be formed on the lower substrate 41 or the upper substrate 52, and a seal material (not shown) for bonding the lower substrate 41 and the upper substrate 52 to the lower portion thereof. It is formed on the substrate 41 or the upper substrate 52.
    [143] Subsequently, the upper substrate 52 serving as the color filter substrate and the lower substrate 41 serving as the thin film transistor array substrate are bonded to each other.
    [144] Although not shown, the black matrix layer and the color filter layer are formed on the upper substrate 52, and the alignment layer of the same material as the lower substrate 41 is formed on the entire surface of the upper substrate 52.
    [145] The liquid crystal layer may be formed after bonding the upper substrate 52 and the lower substrate 41.
    [146] In this case, the cell gap of the upper substrate 52 and the lower substrate 41 is maintained by the pixel electrode 49 and the common electrode 50.
    [147] On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.
    [148] As described above, the transverse electric field type liquid crystal display device and the manufacturing method thereof according to the present invention have the following effects.
    [149] First, by forming a pixel electrode and a common electrode on the insulating film pattern, the height of the electrode can be maximized, thereby increasing the potion of the liquid crystal driven by the transverse electric field.
    [150] Second, the process can be simplified by eliminating the spacer process for forming a gap between the upper substrate and the lower substrate by the insulating film pattern.
    [151] Third, the driving voltage can be lowered by maximizing the influence of the transverse electric field applied to the liquid crystal by the electrode, and the opening ratio can be relatively increased by increasing the interval between electrodes when designing the same driving voltage.
    权利要求:
    Claims (8)
    [1" claim-type="Currently amended] A plurality of gate lines and data lines intersecting to define a pixel area;
    A thin film transistor formed at an intersection of the gate line and the data line;
    A plurality of first and second insulating film patterns formed on the pixel area at regular intervals in the same direction as the data lines;
    A pixel electrode connected to the thin film transistor and formed on the first insulating layer pattern;
    And a common electrode formed on the second insulating film pattern with a predetermined interval from the pixel electrode.
    [2" claim-type="Currently amended] The transverse electric field type liquid crystal display of claim 1, wherein the pixel electrode and the common electrode have a zigzag shape.
    [3" claim-type="Currently amended] The transverse electric field liquid crystal display device according to claim 1, wherein the first and second insulating film patterns are formed in pixel regions other than the thin film transistors.
    [4" claim-type="Currently amended] A thin film transistor formed on the first substrate,
    A protective film formed on the entire surface of the first substrate with a contact hole to expose a predetermined portion of the thin film transistor;
    A plurality of first and second insulating film patterns formed on the protective film;
    A pixel electrode formed on the passivation layer and the first insulating layer pattern while being connected to the thin film transistor through the contact hole;
    A common electrode formed on the second insulating film pattern and the protective film at a predetermined interval from the pixel electrode;
    A second substrate bonded to correspond to the first substrate,
    A transverse electric field type liquid crystal display device comprising a liquid crystal layer formed between the first substrate and the second substrate.
    [5" claim-type="Currently amended] The transverse electric field liquid crystal display device according to claim 4, wherein the first and second insulating film patterns are any one of acrylic, polyimide, BCB, silicon oxide film, and silicon nitride film.
    [6" claim-type="Currently amended] The liquid crystal display of claim 4, wherein the cell gaps of the first and second substrates are determined by the pixel electrode and the common electrode.
    [7" claim-type="Currently amended] Forming a thin film transistor on the first substrate;
    Forming a protective film on an entire surface of the first substrate;
    Forming an insulating film on the protective film and selectively patterning the insulating film to form a plurality of first and second insulating film patterns on the protective film;
    Selectively removing the passivation layer to expose a predetermined portion of the thin film transistor to form a contact hole;
    Forming a pixel electrode on the first insulating layer pattern while being connected to the thin film transistor through the contact hole and forming a common electrode on the second insulating layer pattern at a predetermined interval from the pixel electrode;
    And forming a liquid crystal layer between the first substrate and the second substrate.
    [8" claim-type="Currently amended] The method of manufacturing a transverse electric field type liquid crystal display device according to claim 7, wherein the insulating film is formed using any one of acryl, polyimide, BCB, silicon oxide film, and silicon nitride film.
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    同族专利:
    公开号 | 公开日
    KR100840680B1|2008-06-24|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-07-02|Application filed by 엘지.필립스 엘시디 주식회사
    2002-07-02|Priority to KR1020020037993A
    2004-01-13|Publication of KR20040003327A
    2008-06-24|Application granted
    2008-06-24|Publication of KR100840680B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020020037993A|KR100840680B1|2002-07-02|2002-07-02|Inplane switching mode liquid crystal display device and method for fabricating the same|
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