• 专利附录
  • 专利说明
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    • 专利摘要:
    The medical imaging device and device 4 has an x-ray detector 10 composed of a plurality of pendulum pixel detectors 12, each of which has an associated electrical circuit 15 and a counter 68 (FIG. 5B). . In use, an object is placed between the x-ray generator 2 (FIG. 1) and the x-ray detector 10, irradiated, and the x-ray light incident on the pixel detector 12 is directly converted into a corresponding electrical signal, which is an electrical circuit. Digitized by (15) and counted by counter (68). These digitized electrical signals represent the energy and the incident position of the absorbed x-rays and can provide an image representing the manipulated X-rayed subject. This image is an image in which visual analysis can be performed in real time.
    公开号:KR20030096254A
    申请号:KR10-2003-7010478
    申请日:2002-02-08
    公开日:2003-12-24
    发明作者:마리오 레몬도 카리아；켄웨이 몽고메리 스미스
    申请人:더 유니버시티 코트 오브 더 유니버시티 오브 글래스고우；
    IPC主号:
    专利说明:

    Medical Imaging Device {MEDICAL IMAGING DEVICE}
    [2] In medical radiography, a typical X-ray imaging system included a conventional film plate on which an image of a subject was irradiated. Recently, digital imaging systems have been used for digital radiography. Some digital imaging systems currently in use utilize semiconductors having transistor pixels that collect charges generated by radiation entering the semiconductor after passing through a conversion plate. The conversion plate consists mainly of a flash material that multiplexes and converts the X-rays to a wavelength suitable for detecting the transistor pixels. The material that absorbs the radiation after the scintillator is usually amorphous silicon. Other known direct detection systems use amorphous selenium for radiation absorption. Such a system has the disadvantage of requiring a recovery time between doses of radiation.
    [3] In addition, for use in angiography, these systems rely mainly on a technique called Digital Subtraction Angiography, which obtains a first irradiated image prior to injection of contrast fluid. Subsequently, a contrasting fluid (mainly an iodine system) is injected into the relevant region to obtain a second irradiated image. Subsequently, the first irradiated image is subtracted from the second irradiated image to improve the contrast of the final image. However, this technique requires at least two irradiations of radiation, and some patients are also allergic to contrast fluids such as iodine.
    [1] The present invention relates to a medical imaging apparatus and related systems and methods, and in particular, but not limited to the imaging system for digital angiography.
    [63] 1 is a view showing a medical imaging system according to an embodiment of the present invention.
    [64] 2 is a view showing an X-ray detector with a portion removed in accordance with an embodiment of the present invention.
    [65] 3A is a schematic diagram showing an arrangement of a detection chip and a read chip according to an embodiment of the present invention.
    [66] 3B is a schematic diagram illustrating an x-ray detector according to an embodiment of the present invention.
    [67] 4 is a schematic cross-sectional view showing one pixel detector of the x-ray detector of FIG.
    [68] 5A is a schematic diagram showing a readout circuit arrangement of a pixel array according to an embodiment of the present invention.
    [69] 5B is a circuit diagram illustrating pixel detector electronics in accordance with an embodiment of the present invention.
    [70] 6 is a schematic view showing an energy selection process of the present invention.
    [71] 7A and 7B show images obtained at different energy selection levels in accordance with the present invention.
    [72] 8A is a diagram showing an image obtained using the imaging apparatus of the present invention.
    [73] 8b is a view showing an image obtained using a known medical imaging system.
    [74] 9 is a schematic cross-sectional view showing a pixel detector according to another embodiment of the present invention.
    [75] 10 is a schematic cross-sectional view showing a crossed microstrip detector according to another embodiment of the present invention.
    [4] It is a first object of the present invention to eliminate or reduce at least one of the above-mentioned problems using direct detection photon counting pixel detectors.
    [5] According to a first aspect of the present invention, in a medical imaging apparatus comprising an x-ray detector,
    [6] The X-ray detector includes a plurality of semiconductor detection elements, and in use, a medical imaging apparatus is provided, wherein the X-ray light incident on the semiconductor detection element is directly converted into a corresponding electric signal.
    [7] Advantageously, said electrical signal from each of said pixel detectors is provided to at least one electrical circuit, where said electrical signal can be digitized.
    [8] Preferably, the number of x-ray lights in the selected energy range absorbed by each of the pixel detectors is recorded by a binary counter or scaler counter embedded in each pixel.
    [9] Preferably, the detector arrangement is effective for detecting x-ray light having energies in excess of 1 keV, with a range of 1 keV or more and 200 keV or less, in one embodiment greater than 50 keV.
    [10] Preferably, the electrical signals indicate the energy and location of the absorbed x-rays.
    [11] Preferably, the semiconductor pixel detectors comprise a plurality of semiconductor wafer chips, each of which is preferably arranged on an electric circuit chip which is tiled to each other.
    [12] Preferably, each semiconductor wafer chip has a plurality of pixels.
    [13] Preferably, each pixel detector is an x-ray photon counter, and each pixel detector element generates a charge pulse corresponding to the energy of absorbed incident photons, and also preferably counts the number of absorbed photons.
    [14] Preferably, the electrical contact is formed on the rear side of each of the semiconductor wafers, and the rectifying contact is made by an electrode embedded in each of the semiconductor pixels.
    [15] Preferably, each of the pixel electrodes is connected to a corresponding electrical signal digitization circuit.
    [16] Preferably, the electrical circuit is formed of a plurality of pixel signal digitizing circuits, each of which corresponds to one semiconductor wafer pixel.
    [17] Preferably, each of the electrical circuits is one read out integrated circuit.
    [18] Preferably, the pixel detectors are formed of a compound semiconductor material, for example, a III-V semiconductor material.
    [19] In one embodiment, the semiconductor is a gallium arsenide-based material system.
    [20] In such an embodiment, the semiconductor may be formed of epitaxially-formed gallium arsenide or an alloy thereof formed on a gallium arsenide substrate.
    [21] Alternatively, the semiconductor may be formed of silicon or cadmium telluride or an alloy thereof.
    [22] Advantageously, by combining the pulse height analysis with the electrical signal processing of each pixel of the read integrated circuit, energy selection enables the counting of only the most appropriate energies of the absorbed x-ray light to optimize image quality, thereby enhancing image quality. Let's do it.
    [23] The X-ray detector of the medical imaging apparatus may include or a plurality of monolithic semiconductor pixel detectors, wherein the X-ray light incident on the monolithic semiconductor pixels is directly converted into a corresponding electric signal. Preferably, the electrical signal is digitized and processed into electronics embedded in a monolithic semiconductor pixel detector.
    [24] Alternatively, the X-ray detector of the medical imaging apparatus may include a semiconductor substrate, and a plurality of electrodes made of strips is disposed on one surface of the semiconductor substrate, and a plurality of reverse bias pn junction electrodes made of strips on the opposite surface. Are formed extending so as to be orthogonal to those formed on one surface of the substrate, and each of the X-ray photons incident on the detector transmits an electrical signal representing the position of the photon, preferably the energy, to the intersection of the electrodes on both surfaces. Can be generated.
    [25] According to a second aspect of the present invention, in a medical imaging apparatus including a medical imaging apparatus, the medical imaging apparatus includes a plurality of semiconductor pixel detectors operatively connected to at least one electrical circuit, and in use, The medical imaging apparatus is characterized in that the X-ray light incident on the detectors are converted into a corresponding electrical signal.
    [26] Preferably, the x-ray generator generates x-ray lights to be incident on the detector.
    [27] Preferably, the imaging apparatus is arranged such that a subject can be disposed between the X-ray generator means and the semiconductor pixel means, and the electrical signal generated by the X-ray light indicates the irradiated subject.
    [28] Preferably, the generated x-ray light has one or more values in the range of 1 keV to 200 keV.
    [29] Preferably, the radiant energy has one or more values in the range of 1 keV to 200 keV.
    [30] The medical imaging device semiconductor pixel detectors may include a plurality of semiconductor wafer chips coupled to each other in a tile form.
    [31] Preferably, each semiconductor wafer comprises a plurality of pixels.
    [32] Preferably, each pixel is one counter, and each pixel detection element counts the number of incident photons and measures the corresponding energy.
    [33] According to a third aspect of the present invention, in a method for x-ray imaging of a subject,
    [34] Disposing a required body portion between the x-ray generator and the detector;
    [35] Irradiating the body portion by X-rays generated by the X-ray generator;
    [36] And directly converting the x-ray received by the detection means into charge by semiconductor pixels having the detection means.
    [37] Advantageously, the method transfers the charge generated by the energy of the absorbed x-rays using an electric field to an electrode embedded in each of the pixels of a Read Out Integrated Circuit (ROIC), and the charge The step of converting into an electrical signal further includes.
    [38] Advantageously, the method comprises collecting said charge from said pixels;
    [39] Digitizing the charge;
    [40] Storing the digitized charge as data in a buffer in the read integrated circuit;
    [41] The method may further include providing an image representing the subject irradiated by the X-ray by manipulating the stored data.
    [42] Advantageously, the method collects said electrical signal at each electrode in rows of pixels, and passes said electrical signal through said electrical circuit to a read out cell at the end of said row. It also includes the steps.
    [43] Advantageously, the method further comprises simultaneously collecting pixel data from the read cells of each of said rows and delivering the collected data to a buffer.
    [44] Advantageously, the method also includes transferring said digitized signals from said system to a video and recording system for visual analysis.
    [45] Preferably, the method also includes performing visual analysis in real time.
    [46] Advantageously, the method comprises generating pictures in real time, wherein the spacing between pictures is less than 1 second.
    [47] Preferably, the method comprises generating an image having a resolution of at least three line pairs per mm.
    [48] Preferably, the method comprises exposing the subject to only one irradiation to obtain an image of the subject.
    [49] In one embodiment, the method may include using an imaging fluid when irradiating the subject, and introducing the imaging fluid into the subject by injecting the imaging fluid into peripheral arteries.
    [50] In another preferred embodiment, the use of contrast fluid is unnecessary.
    [51] According to a fourth aspect of the present invention, in the method of using a medical imaging apparatus for performing x-ray imaging on a subject, the medical imaging apparatus includes a plurality of semiconductor pixel detectors and at least one electrical circuit. Here, a method of using a medical imaging apparatus in which an X-ray light flux irradiating the subject is incident on the semiconductor pixels and converted into corresponding electrical signals.
    [52] Preferably, the flux of the x-rays does not exceed a certain rate, for example 1 MHz.
    [53] Preferably, the electrical signals represent the number and energy of each proton.
    [54] Advantageously, said electrical signals are provided to at least one electrical circuit, wherein said signals are digitized.
    [55] Preferably, the image of the subject is reconstructed from the electrical signals by at least one of the electrical circuits.
    [56] Preferably, only one irradiation of the subject is required to obtain an image of the subject.
    [57] Preferably, the subject may be a body part of a patient.
    [58] An advantage in at least one embodiment of the present invention is that at least 50% of the x-ray radiation dose is required to obtain a clear image of the subject than is used in known systems.
    [59] An advantage in at least one embodiment of the present invention is that a dose of contrast medium in a carrier fluid is at least a factor of 10 than that used when investigating using known systems. It can be.
    [60] Preferably, the medical imaging system is suitable for use when performing angiography, preferably for humans or for animals.
    [61] Alternatively, the medical imaging system is suitable for use in imaging and diagnostics, for example, in living blood vessels and conduits in humans or animals.
    [62] The devices described above are particularly suitable and suitable for use in angiography with instruments and methods.
    [76] 1 is a medical imaging system (generally provided with an x-ray detector plate 10) and an x-ray generator 2 for generating x-ray light having a plurality of radiation values ranging from 1keV to 200keV. And "4"). The object or body to be irradiated is placed in the space between the generator 2 and the detection plate 10.
    [77] 2 shows an X-ray detection plate 10. The detection plate 10 includes a layer 12 of semiconductor pixel detectors, which is a matching layer 14 consisting of a plurality of pixel read out integrated circuits (ROICs) 15. Are connected via solder bumps 18, and the integrated circuit 15 is connected to the control and data acquisition circuit 16 by control tracks 17. 3A schematically shows that the plurality of read integrated circuits 13 and the semiconductor pixel detection layer 12 of the circuit layer 14 are connected to each other by solder bumps 18. As shown in FIG. 3B, the semiconductor pixel detector includes a plurality of semiconductor wafer chips 20 tiled to each other, and each of the semiconductor wafer chips includes a plurality of pixels, each of the pixels. Corresponds to one X-ray photon counter. The wafers 20 are tiled to each other, placed on top of the pixel read cells 13, and the wafers 20 are connected to the cells 13 by solder bumps 18. The read cells are connected to data acquisition and control circuitry 16 by ultrasonic bonds 19. These semiconductor pixel detection chips are formed of high-grade epitaxial semiconductor materials, thereby reducing dark current noise of pixel sensors caused by crystal defects and impurities found in industrial standard semiconductor materials. improve the resolution.
    [78] 4 is a cross-sectional structure diagram illustrating one semiconductor pixel detection cell. The pixel detection cell 22 serves as an ohmic contact and is a material forming a semiconductor pixel detector and a metal layer 24 having a thickness of about 1 μm and having effective transparency to incident X-ray light. The high resistance semiconductor layer 23 of Si or GaAs is included. The electrode 25 is a rectifying electrical contact embedded in the pixel 22, and is connected to one pixel reading circuit 14 by solder bumps 18. ) Becomes one component of a plurality of such circuits in one read integrated circuit (ROIC). The pixel ROIC 14 is ultrasonically bonded to the control and data acquisition circuit 16. An electric field is applied across the pixel 22 by this circuit 16. The pixel reading circuit 14 of each pixel detection cell 22 is connected via control lines connected to the control and acquisition circuit 16.
    [79] When the X-rays enter the semiconductor detection pixel 12, each of the X-ray photons is detected by the pixel 22. This x-ray photon absorption results in electron-hole pairs in the semiconductor. The number of electron hole pairs generated represents the energy of the X-rays. By the movement of pairs of electron holes in each of the pixels 22 in the electric field generated by the circuit 26, an electrical signal on the electrode 25 is transmitted to the readout circuit via the solder bumps. By analyzing the magnitude of the electrical signal proportional to the absorbed x-ray energy in proportion to the number of pairs of electron holes, the readout circuit provides a readout value indicating the position and x-ray energy of the absorbed x-ray photons. Each read circuit includes a data buffer that registers the number of absorbed x-rays that meet predetermined energy requirements, which represents the density of the subject being emitted. The collection of pixel data from the read cell 14 of each of the pixels is performed simultaneously by pulsed signals, and the collected data are transferred to the buffer 16 along the control lines, from which the buffer 16 It is retrieved and reconstructed to form an image. Electronic signal pulse height analysis as described above-improved image quality can be obtained by X-ray energy determination.
    [80] 5A and 5B illustrate an example arrangement as a method that can achieve a systematic readout of a pixel array detector through matrix addressing to identify each pixel. The pixel 50 detects the absorption of the X-ray light and generates and processes the electrical signal accordingly, and transmits the electrical signal to the row bus 51 and the column bus 52 passing through the position. Add.
    [81] The processing for electrical signals in the above-described chip is generally pixel electrons, as shown in FIG. 5B, which can handle the flux of x-ray photons that do not exceed one million per second. Performed by electronics. The input 60 receives the electrical signal generated in the semiconductor pixel detector by absorption of X-ray photons. This input signal is provided via a preamplifier 62, which amplifies the input signal to a level suitable for processing, and the amplified signal is provided to a latched comparator 64. If the amplified signal energy level is lower than the specified threshold level of the latch comparator 64, a binary signal " 0 " is transmitted through this circuit. A binary signal "1" means that the signal energy level is higher than the specified threshold level. The binary signal is continuously stored in the shift register 68 serving as a binary counter. The shift register read value is obtained sequentially with those from the shift registers of other pixels, and this information is used to generate an image. In order to obtain accurate images representing the subject to be irradiated, several latch comparators 64 having different threshold levels may be connected in parallel. This allows multiple absorption x-ray lights in each of a range of energy intervals to be recorded at the same time, taking into account in the image processing to determine the most suitable energy range to provide the most appropriate image of the subject to be irradiated. Could be. Image contrast depends on the relative absorption power of different tissues, which in turn depend on x-ray energy, thus enabling optimization of contrast for given tissues by energy selection. 6 schematically shows an energy selection system.
    [82] By using the energy selection principle, it is possible to identify whether low spectrum or high spectral energy is required to obtain the sharpest image. 7A and 7B show results obtained by changing the energy range used for image formation, as examples of different contrasts obtained at different energies. An image of the subject (two cherries) shown in FIG. 7A was obtained by imaging the cherries using X-ray lights in an energy range of 25-60 keV, and the images of cherries shown in FIG. 7B had an energy range of 25-35 keV. It was obtained by imaging with. From these images, it can be seen that the result of energy selection changes the contrast from soft tissue to hard tissue, in which case a low energy spectrum is most appropriate.
    [83] Another advantage of the present invention is that, by using the X-ray detection plate of the present invention, only one subject irradiation is required to obtain an image, thereby increasing the X-ray processing speed. Another advantage of the present invention is that the dose required to provide a clear image is low. Combining single dose X-ray light, compound semiconductors such as GaAs, and the principle of energy selection means that the dose is generally 20 times lower than that used in known x-ray detectors. For example, as shown in Figs. 8A and 8B, when the present invention is used, a dose of ˜35 μgy is required to obtain children's dental images (Fig. 8A). The image of FIG. 8B was obtained with a commercial flash coating CCD system (Sens-A-Ray) using a dose of ˜980 μgy. By determining the exact required dose using the energy selection principle, the number of x-ray lights falling within each energy range can be identified, and the contrast can be optimized.
    [84] Another advantage of the present invention is that the need for contrast fluid is reduced, although it may not be completely eliminated. In general, x-rays currently used require contrast media of 300-400 mg / ml, but using the detection plate 10 eliminates the need for any contrast fluid. In general, effective contrast can be achieved with the proper energy selection.
    [85] In addition, by using the X-ray detector of the present invention, the imaging system can provide a visual analysis of the subject in real time. This can be accomplished by continuously irradiating the subject or using a pulse x-ray generator. Reading of the detector is required to provide an inter image interval of 1 second or less, and resolution must be at least 31 p / mm to meet cardiologist requirements for visual analysis.
    [86] 9 is a schematic structural diagram showing another monolithic pixel structure that can be used as a pixel detector in the above-described arrangement. It can be seen that the electronic signal generated by the photons travels toward the electrode embedded in the detector (in this case, the p-collection electrode). Then, the generated electrical signal is processed in the above-described electronic device to provide energy selection information for the X-rays. The advantage of this system is that processing for the electrical signal is performed in the pixel detector. Currently, silicon is used as a semiconductor pixel detector to realize such an arrangement, but similar principles are expected to be applied to gallium arsenide.
    [87] 10 shows another possible arrangement for the pixel detector arrangement. The detector array 60 has a plurality of aluminum electrodes 62 formed as strips on top of the semiconductor substrate 64. The plurality of reversed bias p-n junction electrodes 66 are formed as strips at the bottom of the semiconductor substrate 64 and extend to be orthogonal to those formed at the top. When the X-ray photon enters the detector, it is detected by the upper electrode 62 and also by the lower electrode 66. The electrical signal is generated at the intersection of the upper electrode and the lower electrode, indicating the position of the incident photons. As before, the energy of photons is also detected. The image of the subject irradiated from these signals can be reconstructed.
    [88] The imaging system is particularly suitable for performing angiography of humans or animals because it uses a photon counting detector that uniquely enables digital x-ray imaging with simultaneous multiple images within a selectable range of x-ray energy. . Such energy selection enables the enhancement of contrast resolution through energy selection in all tissue types, thereby providing an opportunity to avoid double irradiation of digital subtraction technology, and in most cases the need for contrast fluid is required. It will disappear. Angiography is also particularly suitable because the imaging system also operates effectively in an energy range of 50 keV or more, and the known system is low in efficiency within this energy range, thus reducing the amount of radiation required again.
    [89] Various modifications to the detector described above are possible without departing from the scope of the present invention. For example, the electrical circuit 14 may be a conventional commercial very large scale integrated chip or a custom ASIC. The material of the semiconductor detector may be silicon, or may be a III-V semiconductor material such as GaAs, or may be Cadmium Telluride, CdZnTe, or the like. Like CO 2 series contrast fluids, less aggressive contrast fluids currently under investigation can be used. Such a low-toxic contrast fluid has a lower resolution than the iodine-based contrast fluid in the current imaging system, but is not widely used at present, but may be more effectively used with the present invention.
    权利要求:
    Claims (34)
    [1" claim-type="Currently amended] In the medical imaging apparatus comprising an x-ray detector,
    The X-ray detector includes a plurality of semiconductor detection elements, and during operation, X-ray light incident on the semiconductor detection element is directly converted into a corresponding electrical signal.
    [2" claim-type="Currently amended] The medical imaging apparatus of claim 1, wherein the semiconductor detection devices are pixel detectors.
    [3" claim-type="Currently amended] The medical imaging apparatus of claim 2, wherein the electrical signal from each of the pixel detectors is provided to at least one electrical circuit, wherein the electrical signal is digitized.
    [4" claim-type="Currently amended] 4. The medical imaging apparatus according to any one of claims 1 to 3, wherein the number of X-ray lights in the selected energy range absorbed by each of the pixel detectors is recorded by a counter embedded in each pixel.
    [5" claim-type="Currently amended] The medical imaging apparatus according to any one of claims 1 to 4, wherein the medical imaging apparatus is effective for detecting X-ray lights having an energy exceeding 1 keV.
    [6" claim-type="Currently amended] The medical imaging apparatus according to any one of claims 1 to 5, wherein the medical imaging apparatus is effective for detecting X-ray light having energy in the range of 1 keV or more and 200 keV or less, in particular, energy exceeding 50 keV. Imaging device.
    [7" claim-type="Currently amended] The medical imaging apparatus of any one of claims 1 to 6, wherein the electrical signals represent an incident position and energy of the absorbed X-rays.
    [8" claim-type="Currently amended] The medical imaging apparatus according to any one of claims 1 to 7, wherein the semiconductor pixel detectors comprise a plurality of semiconductor wafer chips each disposed on an electric circuit chip coupled to each other in a tile form.
    [9" claim-type="Currently amended] The medical imaging apparatus of claim 8, wherein an electrical contact is formed at a rear side of each of the semiconductor wafers, and a rectifying contact is formed by an electrode embedded in each of the semiconductor pixels.
    [10" claim-type="Currently amended] 10. The medical imaging apparatus of claim 9, wherein each of the pixel electrodes is connected to a corresponding electrical signal digitization circuit.
    [11" claim-type="Currently amended] The medical imaging apparatus of claim 10, wherein each of the electrical circuits is one read out integrated circuit.
    [12" claim-type="Currently amended] The medical imaging apparatus of any one of claims 1 to 11, wherein the pixel detectors are made of a compound semiconductor material such as a III-V semiconductor material.
    [13" claim-type="Currently amended] The medical imaging apparatus of any one of claims 1 to 12, wherein the semiconductor material comprises a gallium arsenide material.
    [14" claim-type="Currently amended] The medical imaging apparatus according to any one of claims 1 to 13, wherein the semiconductor is formed of epitaxially-formed gallium arsenide or an alloy thereof formed on a gallium arsenide substrate.
    [15" claim-type="Currently amended] 15. The method according to claim 14, wherein the pulse height analysis is combined with the electrical signal processing of each pixel of the read integrated circuit, and energy selection makes it possible to count only the most appropriate energies of the absorbed X-ray light for the optimization of the image quality. Medical imaging device, characterized in that to improve.
    [16" claim-type="Currently amended] The medical imaging apparatus of claim 2, wherein each of the pixel detectors is a monolithic semiconductor pixel detector, and incident light is directly converted into a corresponding electric signal.
    [17" claim-type="Currently amended] 17. The medical imaging apparatus of claim 16, wherein the electrical signal is digitized and processed in electronics embedded in the monolithic semiconductor pixel detector.
    [18" claim-type="Currently amended] The semiconductor device of claim 1, wherein the semiconductor detection elements comprise a semiconductor substrate, and a plurality of electrodes formed of strips are disposed on one surface of the semiconductor substrate, and a plurality of reverse bias pn junction electrodes formed of strips are formed on an opposite surface thereof. Extending orthogonally to those formed on one surface of the substrate, wherein each of the x-ray photons incident on the detector generates an electrical signal at the intersection of the electrodes on both surfaces that indicates the energy of the photon and its location; Medical imaging device characterized in that.
    [19" claim-type="Currently amended] 19. A medical imaging device comprising a medical imaging device as defined in any of claims 1-18.
    [20" claim-type="Currently amended] 20. The medical imaging apparatus of claim 19, wherein the X-ray generator generates X-ray light incident on the semiconductor detection means.
    [21" claim-type="Currently amended] 21. The medical imaging apparatus according to claim 20, wherein a subject is disposed between the X-ray generator means and the semiconductor pixel means, and the electrical signal generated by the semiconductor detection means indicates the subject to which the subject is irradiated.
    [22" claim-type="Currently amended] In the x-ray imaging method of the subject,
    Disposing at least a portion of the subject between the x-ray generator and the detection means;
    Irradiating at least a portion of the subject by x-rays generated by the x-ray generator;
    And converting the x-rays received by the detecting means directly into electric charges by semiconductor pixels having the detecting means.
    [23" claim-type="Currently amended] 23. The method of claim 22, further comprising: transferring the charge generated by the energy of the absorbed x-ray to an electrode embedded in each of the pixels of a read out integrated circuit (ROIC) using an electric field;
    And converting the charge into an electrical signal.
    [24" claim-type="Currently amended] 24. The method of claim 23, further comprising: collecting the charge from the pixels;
    Digitizing the charge;
    Storing the digitized charge as data in a buffer in the read integrated circuit;
    And manipulating the stored data to provide an image representing the subject irradiated with the x-ray.
    [25" claim-type="Currently amended] 25. The method of claim 24, further comprising: collecting the electrical signal at each electrode in rows of pixels;
    And passing said electrical signal through said electrical circuit to a read out cell at the end of said row.
    [26" claim-type="Currently amended] 27. The method of claim 25, further comprising simultaneously collecting pixel data from the read cells of each of the rows and delivering the collected data to a buffer.
    [27" claim-type="Currently amended] 27. The method of claim 26, further comprising transferring the digitized signals from the system to a video and recording system for visual analysis.
    [28" claim-type="Currently amended] 28. The method of claim 27, further comprising performing visual analysis in real time.
    [29" claim-type="Currently amended] In the method of using a medical imaging device for performing x-ray imaging of a subject,
    The medical imaging apparatus includes a plurality of semiconductor detection elements and at least one electric circuit, wherein a flux of X-ray light irradiating the subject is incident on the semiconductor detection elements and converted into corresponding electrical signals. Method of using a medical imaging device, characterized in that.
    [30" claim-type="Currently amended] 30. The method of claim 29, wherein the electrical signals represent the number and energy of each of the protons.
    [31" claim-type="Currently amended] 31. The method of claim 30, wherein the electrical signals are provided to at least one electrical circuit, wherein the signals are digitized.
    [32" claim-type="Currently amended] 32. The method of claim 31, wherein the image of the subject is reconstructed from the electrical signals by at least one of the electrical circuits.
    [33" claim-type="Currently amended] 30. The method of claim 29, wherein only one irradiation of the subject is necessary to obtain an image of the subject.
    [34" claim-type="Currently amended] 34. A method according to any one of claims 29 to 33, wherein said medical imaging device is for use in performing angiography of humans or animals.
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    同族专利:
    公开号 | 公开日
    JP2004530864A|2004-10-07|
    EP1358509A1|2003-11-05|
    GB0103133D0|2001-03-28|
    WO2002063339A1|2002-08-15|
    NZ527573A|2005-05-27|
    CN1524189A|2004-08-25|
    US20040096031A1|2004-05-20|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-02-08|Priority to GB0103133.5
    2001-02-08|Priority to GB0103133A
    2002-02-08|Application filed by 더 유니버시티 코트 오브 더 유니버시티 오브 글래스고우
    2002-02-08|Priority to PCT/GB2002/000549
    2003-12-24|Publication of KR20030096254A
    优先权:
    申请号 | 申请日 | 专利标题
    GB0103133.5|2001-02-08|
    GB0103133A|GB0103133D0|2001-02-08|2001-02-08|Improvements on or relating to medical imaging|
    PCT/GB2002/000549|WO2002063339A1|2001-02-08|2002-02-08|Medical imaging device|
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