Electron emitter and its production method, cold-cathode field electron emitter and its production m

专利摘要:
The cold cathode field emission element is formed on the cathode electrode 11 and the cathode electrode 11 formed on the support 10, and has a gate electrode 13 having an opening 14 and a bottom of the opening 14. It consists of an electron-emitting part 15 formed on the surface of the portion of the cathode electrode 11, the electron-emitting part 15 is composed of a carbon-based material layer 23, the carbon-based material layer 23 is a hydrocarbon It is formed using a gas and a fluorine-containing hydrocarbon gas.
公开号:KR20030088063A
申请号:KR10-2003-7013548
申请日:2002-04-09
公开日:2003-11-15
发明作者:무로야마마사카즈；야기다카오；이노우에고우지；사이토이치로
申请人:소니 가부시끼 가이샤；
IPC主号:

专利说明:

Electron emitter and its manufacturing method, cold cathode field emission device and its manufacturing method, and cold cathode field emission display and its manufacturing method {Electron emitter and its production method, cold-cathode field electron emitter and its production method, and cold-cathode field electron emission display and its production method}
[2] In the field of display devices used in television receivers and information terminal equipment, flat panel (flat) that can meet the requirements of thinning, lightening, large screen, and high definition in conventional mainstream cathode ray tube (CRT) The transition to the display device of the panel type) is considered. As such a flat display device, a liquid crystal display (LCD), an electro luminescence display (ELD), a plasma display (PDP), a cold cathode field emission display (FED: field emission display) can be exemplified. Can be.
[3] Among them, the liquid crystal display device is widely used as a display device for information terminal equipment, but application to a stationary television receiver still leaves a problem in high luminance and enlargement. In contrast, the cold cathode field emission display device is a cold cathode field emission device capable of emitting electrons from a solid to a vacuum in accordance with the quantum tunnel effect regardless of thermal excitation (hereinafter, referred to as a field emission device). ), And attracts attention in terms of high brightness and low power consumption.
[4] 20 and 21 show an example of a cold cathode field emission display device (hereinafter sometimes referred to as a display device) using a field emission device. 20 is a schematic partial cross-sectional view of the display device, and FIG. 21 is a schematic partial perspective view when the cathode panel CP and the anode panel AP are disassembled.
[5] The illustrated field emission device is a field emission device of the type called a Spindt type field emission device having a conical electron emission portion. The field emission device includes a cathode electrode 111 formed on the support 110, an insulation layer 112 formed on the support 110 and the cathode 111, and a gate electrode formed on the insulation layer 112. An opening 114 provided in the gate electrode 113 and the insulating layer 112, and a conical electron emission section 115 formed on the cathode electrode 111 located at the bottom of the opening 114. Consists of.
[6] In general, the cathode electrode 111 and the gate electrode 113 are each formed in a stripe shape in the direction in which the four images of these electrodes are orthogonal to each other, and the regions where the four images of these electrodes overlap each other (one pixel). This area is hereinafter referred to as a redundant area or an electron emission area), and a plurality of electron-emitting devices are usually provided.
[7] In addition, these electron emission regions are normally arranged in a two-dimensional matrix in the effective region (region serving as an actual display portion) of the cathode panel CP.
[8] On the other hand, the anode panel AP is formed on the substrate 30, the substrate 30, the phosphor layer 31 (31R, 31B, 31G) having a predetermined pattern, and the anode electrode 33 formed thereon. )
[9] One pixel includes a group of field emission devices provided in an overlapping region between the cathode electrode 111 and the gate electrode 113 on the cathode panel side, and the phosphor on the anode panel side facing a group of these field emission devices. It is comprised by the layer 31. In the effective area, such pixels are arranged as hundreds of thousands to millions of orders, for example. Further, a black matrix 32 is formed on the substrate 30 between the phosphor layer 31 and the phosphor layer 31.
[10] The display device can be fabricated by arranging the anode panel AP and the cathode panel CP so that the electron emission region and the phosphor layer face each other, and are bonded to each other via the frame 34 at the periphery. A through hole 36 for evacuation is provided in an ineffective region (in the illustrated example, in an ineffective region of the cathode panel CP) in which the peripheral circuit is formed to surround the effective region and select pixels. The hole 36 is connected to the chip tube 37 opened after vacuum exhaust. That is, the space enclosed by the anode panel AP, the cathode panel CP, and the frame 34 is in a vacuum.
[11] A relative negative voltage is applied to the cathode electrode 111 by the cathode electrode control circuit 40, a relative constant voltage is applied to the gate electrode 113 by the gate electrode control circuit 41, and a gate electrode () is applied to the anode electrode 33. A constant voltage higher than that of 113 is applied in the anode electrode control circuit 42. In the case of displaying in such a display device, for example, a scan signal is input from the cathode electrode control circuit 40 to the cathode electrode 111 and a video signal from the gate electrode control circuit 41 to the gate electrode 113. Enter.
[12] Electrons are emitted from the electron emission unit 115 based on the quantum tunnel effect by an electric field generated when a voltage is applied between the cathode electrode 111 and the gate electrode 113, and the electrons are discharged from the anode electrode 33. ) And impinges on the phosphor layer 31. As a result, the phosphor layer 31 is excited to emit light, and a desired image can be obtained. As a result, the operation of the display device is basically controlled by the voltage applied to the gate electrode 113 and the voltage applied to the electron emission unit 115 through the cathode electrode 111.
[13] In the structure of such a display device, in order to obtain a large emission electron current at a low driving voltage, it is effective to sharpen and point the tip of the electron emission section. From this point of view, the electron emission section of the spin type field emission device ( 115) can be said to have excellent performance. However, the formation of the conical electron emitting portion 115 requires a high level of processing technology, and in some cases, uniformly forming the electron emitting portion 115, which extends to tens of millions or more, over the entire effective area, As the area of the effective area increases, it becomes difficult.
[14] Therefore, a so-called planar field emission device using a planar electron emission unit exposed to the bottom surface of the opening without using a conical electron emission unit has been proposed. The electron emission unit in the planar field emission element is provided on the cathode electrode. In order to achieve a high emission electron current even in a planar shape, it is composed of a material having a lower work function than the material of the cathode electrode. As such a material, various carbon-based materials including diamond-like carbon (DLC) have been proposed in recent years.
[15] That is, for example, in the 60th Institute of Applied Physics, Lecture Preliminary Proceedings p.631 and Flame Retardant No. 2p-H-6 (1999), a titanium thin film surface formed by electron beam evaporation on a quartz substrate was diamond. After scratching with powder, a planar electron emitter is formed in which a titanium thin film is patterned to have a gap of several μm in the center, and then a non-doped diamond thin film is formed on the titanium thin film. Or, p.632, Reproduction No. 2p-H-11 (1999), a technique for forming carbon nanotubes on quartz glass with a metal cross line, is disclosed in the 60th Academic Seminar on Applied Physics. have.
[16] By using various carbon-based materials including diamond-like carbon, it is possible to lower the voltage (threshold voltage) at which electrons start to be emitted from the electron-emitting section. However, as a result of the adhesion or adsorption of gas or gaseous substances emitted from various members constituting the cathode electrode or the display device to the electron emitting portion, the characteristics of the electron emitting portion deteriorate, for example, document MSR 2000 Spring Meeting , Preview Q1.3 / R1.3, pp 264 "SURFACE MODIFICATION OF Si FIELD EMITTER ARRAYS FOR VACUUM SEALING". In this document, it is reported that a carbon thin film is formed on the surface of a silicon-based electron emission unit, and that gas or gaseous substances can be prevented from adhering to and adsorbing to the electron emission unit.
[17] However, in this document, no means have been proposed for solving the problem of adhesion or adsorption of gas or gaseous substance to an electron emitting portion in an electron emitting portion using a carbon-based material.
[18] Accordingly, an object of the present invention is to solve the problem that the characteristics of the electron emitting portion deteriorate by attaching and adsorbing a gas or gaseous substance emitted from various members constituting the cold cathode field emission display device to the electron emitting portion. Disclosed are an electron emitting device, a cold cathode field emission device, a method of manufacturing the same, and a cold cathode field emission display device including the cold cathode field emission device and a method of manufacturing the same.
[1] The present invention provides an electron-emitting device for emitting electrons from a carbon-based material layer, a method for manufacturing the same, a cold cathode field-emitting device having an electron-emitting portion composed of a carbon-based material layer, a method for manufacturing the same, and a cold cathode field-emitting device The present invention relates to a cold cathode field emission display device provided with the same, and a manufacturing method thereof.
[252] FIG. 1 is a schematic partial sectional view of a cold cathode field emission display device of Example 1. FIG.
[253] FIG. 2 is a schematic perspective view of one electron emission region in the cold cathode field emission display of Example 1. FIG.
[254] 3A to 3D are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the electron-emitting device in Example 1. FIG.
[255] 4A to 4D are schematic partial cross-sectional views of a substrate and the like for explaining a method of manufacturing an anode panel in the cold cathode field emission display of Example 1. FIG.
[256] 5 is a schematic partial sectional view of the electron-emitting device in Example 2. FIG.
[257] 6A and 6B are schematic partial cross-sectional views of a support body and the like for explaining the method of manufacturing the electron-emitting device in Example 4. FIG.
[258] FIG. 7 is a schematic partial sectional view of the cold cathode field emission display of Example 5. FIG.
[259] 8A and 8B are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the cold cathode field emission device according to the fifth embodiment.
[260] FIG. 9 is a schematic partial sectional view of the cold cathode field emission display of Example 8. FIG.
[261] 10A to 10C are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the cold cathode field emission device according to the eighth embodiment.
[262] 11A and 11 are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the cold cathode field emission device of Example 8, following the example of FIG. 10C.
[263] 12A and 12B are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the cold cathode field emission device of Example 8, following FIG. 11B.
[264] 13A and 13 are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the cold cathode field emission device according to the eleventh embodiment.
[265] 14A and 14B are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the cold cathode field emission device according to the seventeenth embodiment.
[266] FIG. 15 is a schematic partial cross-sectional view of a support or the like for explaining the method for manufacturing the cold cathode field emission device of Example 17, subsequent to FIG. 14B.
[267] FIG. 16 is a schematic partial sectional view of a support or the like for explaining the method for manufacturing the cold cathode field emission device of Example 18. FIG.
[268] 17A and 17B are schematic partial cross-sectional views of a support body and the like for explaining the method for manufacturing the cold cathode field emission device according to Example 19 or Example 20. FIG.
[269] 18A and 18B are schematic partial cross-sectional views of a support shaft and the like for explaining the method for manufacturing the cold cathode field emission device according to Example 19 or 20, following FIG. 17B.
[270] Fig. 19 is a schematic partial sectional view of the cold cathode field emission device of the present invention having a converging electrode.
[271] 20 is a schematic partial cross-sectional view of a conventional cold cathode field emission display having a spin type cold cathode field emission device.
[272] 21 is a schematic partial perspective view when the cathode panel and the anode panel of the cold cathode field emission display device are disassembled.
[19] The electron-emitting device according to the first aspect of the present invention for achieving the above object,
[20] It is composed of an electron emitting portion formed on the conductor,
[21] This electron-emitting part consists of a carbon-based material layer,
[22] The carbonaceous material layer is formed using a hydrocarbon gas and a fluorine-containing hydrocarbon gas.
[23] In the electron-emitting device according to the first aspect of the present invention, the conductor layer and the carbon-based material are reliably formed in the desired region of the conductor layer, and the carbon-based material layer is not formed in the unnecessary portion. It is preferable that a selective growth region is formed between the material layer.
[24] The electron-emitting device according to the second aspect of the present invention for achieving the above object,
[25] It is composed of an electron emitting portion formed on the conductor layer,
[26] This electron emission part consists of a carbonaceous material layer and the fluorocarbon thin film formed in the surface of this carbonaceous material layer,
[27] The fluorocarbon thin film is formed using a fluorine-containing hydrocarbon gas.
[28] Electron-emitting device according to a third aspect of the present invention for achieving the above object,
[29] It is composed of an electron emitting portion formed on the conductor layer,
[30] This electron-emitting part consists of a carbon-based material layer,
[31] The surface of this carbonaceous material layer is characterized by being terminated by a fluorine atom.
[32] In the electron-emitting device according to the third aspect of the present invention, the termination (formula) in the fluorine atom on the surface of the carbonaceous material layer is preferably performed using a fluorine-containing hydrocarbon gas.
[33] In the electron-emitting device according to the second or third aspect of the present invention, the carbon-based material layer can be configured to use a hydrocarbon-based gas. In addition, such a structure is called the electron emitting device concerning 2nd A aspect of this invention for convenience, and the electron emitting device concerning 3rd A aspect of this invention. In this case, the selective growth region is formed between the conductor layer and the carbon-based material layer from the viewpoint that the carbon-based material layer is reliably formed in the desired region of the conductor layer and the carbon-based material layer is not formed at the unnecessary portion. It is hoped that it is formed.
[34] Alternatively, in the electron-emitting device according to the second or third aspect of the present invention, the carbon-based material layer can be constituted of a carbon nanotube structure. In addition, such a structure is called the electron emission apparatus concerning 2nd aspect of this invention for convenience, and the electron emission apparatus which concerns on 3rd aspect of this invention.
[35] The cold cathode field emission device according to the first to third aspects of the present invention for achieving the above object is a cold cathode field emission device constituting a so-called two-electrode cold cathode field emission display device. ,
[36] (a) a cathode electrode formed on a support, and
[37] (b) an electron emission section formed on the cathode electrode.
[38] On the other hand, the cold cathode field emission device according to the fourth to sixth aspects of the present invention for achieving the above object is a cold cathode field emission which constitutes a so-called three-electrode cold cathode field emission display device. Element,
[39] (a) a cathode electrode formed on a support,
[40] (b) a gate electrode formed on the cathode and having an opening, and
[41] (c) It consists of an electron emission part formed on the part of the cathode electrode located in the bottom part of the opening part.
[42] In the cold cathode field emission device according to the first or fourth aspect of the present invention,
[43] The electron emitting portion is made of a carbon-based material layer,
[44] The carbonaceous material layer is formed using a hydrocarbon gas and a fluorine-containing hydrocarbon gas.
[45] In addition, in the cold cathode field emission device according to the second or fifth aspect of the present invention,
[46] The electron emitting portion is made of a fluorocarbon thin film formed on the surface of the carbon-based material layer and the carbon-based material layer,
[47] The fluorocarbon thin film is formed using a fluorine-containing hydrocarbon gas.
[48] Furthermore, in the cold cathode field emission device according to the third or sixth aspect of the present invention,
[49] The electron emitting portion is made of a carbon-based material layer,
[50] The surface of the carbon-based material layer is characterized by being terminated with a fluorine atom.
[51] The cold cathode field emission display device according to the first to third aspects of the present invention for achieving the above object is a so-called two-electrode cold cathode field emission display device.
[52] Composed of a plurality of pixels,
[53] Each pixel comprises a cold cathode field emission element, an anode electrode and a phosphor layer provided on a substrate to face the cold cathode field emission element,
[54] Cold cathode field emission device,
[55] (a) a cathode electrode formed on a support, and
[56] (b) an electron emission section formed on the cathode electrode.
[57] Moreover, the cold cathode field emission display device which concerns on 4th-6th aspect of this invention for achieving the said objective is what is called a 3-electrode cold cathode field emission display device,
[58] Composed of a plurality of pixels,
[59] Each pixel comprises a cold cathode field emission element, an anode electrode and a phosphor layer provided on a substrate to face the cold cathode field emission element,
[60] Cold cathode field emission device,
[61] (a) a cathode electrode formed on a support,
[62] (b) a gate electrode formed on the cathode and having an opening, and
[63] (c) It consists of an electron emission part formed on the cathode electrode part located in the bottom part of an opening part.
[64] In the cold cathode field emission device according to the first or fourth aspect of the present invention,
[65] The electron emitting portion is made of a carbon-based material layer,
[66] The carbonaceous material layer is formed using a hydrocarbon gas and a fluorine-containing hydrocarbon gas.
[67] In addition, in the cold cathode field emission display device according to the second or fifth aspect of the present invention,
[68] The electron emitting portion is made of a fluorocarbon thin film formed on the surface of the carbon-based material layer and the carbon-based material layer,
[69] The fluorocarbon thin film is formed using a fluorine-containing hydrocarbon gas.
[70] Furthermore, in the cold cathode field emission display device according to the third or sixth aspect of the present invention,
[71] The electron emitting portion is made of a carbon-based material layer,
[72] The surface of the carbon-based material layer is characterized by being terminated with a fluorine atom.
[73] In the cold cathode field emission device according to the third and sixth aspects of the present invention, or the cold cathode field emission display device according to the third and sixth aspects of the present invention, there is provided a carbon material layer. It is preferable that the termination (formula) in the fluorine atom on the surface is performed using a fluorine-containing hydrocarbon gas.
[74] A cold cathode field emission device according to the second, third, fifth, and sixth aspects of the present invention, or the second, third, fifth, and sixth aspects of the present invention. In the cold cathode field emission display device, it is preferable that the carbonaceous material layer is formed using a hydrocarbon gas.
[75] In addition, such a configuration is, for convenience, a cold cathode field emission device according to Embodiment 2A, Embodiment 3A, Embodiment 5A, Embodiment 6A, Embodiment 2A, Embodiment 3A, Embodiment 5A, and Embodiment 5A of the present invention. It is called the cold cathode field emission display which concerns on 6A aspect.
[76] Alternatively, the cold cathode field emission device according to the second, third, fifth, and sixth aspects of the present invention, or the second, third, fifth, and sixth aspects of the present invention. In the cold cathode field emission display according to the embodiment, the carbon-based material layer is preferably composed of a carbon nanotube structure.
[77] Further, such a configuration is, for convenience, a cold cathode field emission device according to Embodiments 2B, 3B, 5B, 6B, 2B, 3B, 5B, and 5B of the present invention. It is called a cold cathode field emission display according to Embodiment 6B.
[78] The cold cathode field emission device according to the first, second, third, fourth, fifth, sixth, sixth, sixth aspects of the present invention, or the first, second, and second aspects of the present invention In the cold cathode field emission display device according to Embodiments 3A, 4, 5A, and 6A, a carbon-based material layer is reliably formed in a desired region of the cathode electrode, and a carbon-based material layer is formed at an unnecessary portion. From the standpoint of not forming a film, it is preferable that a selective growth region is formed between the cathode electrode and the carbonaceous material layer.
[79] Alternatively, in the cold cathode field emission device according to the fourth to sixth aspects of the present invention, or the cold cathode field emission display device according to the fourth to sixth aspects of the present invention, a support and Although it is preferable to set it as the structure in which the insulating layer is formed on the cathode electrode, and the 2nd opening part which communicated with the opening part provided in the gate electrode (for convenience, may be called a 1st opening part) is provided in the insulating layer, it is such a structure. For example, a metal layer (for example, a metal sheet or a material made of metal) constituting the gate electrode having the first opening is stretched tightly on the upper side of the electron-emitting part via the gate electrode support member. It may be a structure.
[80] The method for manufacturing an electron emitting device according to the first aspect of the present invention for achieving the above object comprises an electron emitting portion formed of a carbonaceous material layer using a hydrocarbon gas and a fluorine-containing hydrocarbon gas on a conductor layer. It is characterized by including the step of forming.
[81] The manufacturing method of the electron-emitting device which concerns on the 2nd aspect of this invention for achieving the said objective is
[82] (A) forming a carbon-based material layer on the conductive layer,
[83] (B) forms a fluorinated hydrocarbon thin film on the surface of the carbonaceous material layer by using a fluorine-containing hydrocarbon gas, whereby electron emission comprising a carbonaceous material layer and a fluorocarbon thin film formed on the surface of the carbonaceous material layer. It is characterized by comprising a step of obtaining wealth.
[84] The manufacturing method of the electron emitting device which concerns on 3rd aspect of this invention for achieving the said objective is,
[85] (A) forming a carbon-based material layer on the conductive layer,
[86] (B) terminating (formula) the surface of the carbon-based material layer by using a fluorine-containing hydrocarbon gas, thereby obtaining an electron emitting portion composed of a carbon-based material layer whose surface is terminated (formula) with a fluorine atom. It is characterized by.
[87] In the method for producing an electron-emitting device according to the second or third aspect of the present invention, in (A), it is preferable to form a carbon-based material layer on the conductor layer using a hydrocarbon-based gas.
[88] In addition, such a structure is called the manufacturing method of the electron emitting device which concerns on 2nd A aspect of this invention for convenience, and the manufacturing method of the electron emitting device which concerns on 3rd A aspect of this invention.
[89] Alternatively, in the method for producing an electron emitting device according to the second or third aspect of the present invention, in the step (A), a carbon nanotube structure dispersed in a binder material is coated on the conductor layer. After that, it is preferable to form a carbon-based material layer by firing or curing the binder material.
[90] More specifically, what disperse | distributed carbon nanotube structure to organic binder materials, such as epoxy resin and acrylic resin, and inorganic binder materials, such as water glass, was apply | coated to the desired area | region of a conductor layer, for example. After that, the solvent may be removed, and the binder material may be baked or cured. As a coating method, the screen printing method can be illustrated. In addition, such a structure is called the manufacturing method of the electron emission apparatus which concerns on 2nd aspect of this invention for convenience, and the manufacturing method of the electron emission apparatus which concerns on 3rd aspect of this invention.
[91] Alternatively, in the method for producing an electron emitting device according to the second or third aspect of the present invention, in the step (A), a metal compound solution in which a carbon nanotube structure is dispersed is applied onto a conductor layer. After that, it is preferable to form a carbonaceous material layer by firing the metal compound.
[92] In addition, such a structure is called the manufacturing method of the electron emitting device which concerns on 2nd C aspect of this invention for convenience, and the manufacturing method of the electron emitting device which concerns on 3rd C aspect of this invention.
[93] In the method for manufacturing an electron emitting device according to the first aspect, the second aspect of the invention, or the third aspect of the invention, further comprising the step of forming a selective growth region on the conductor layer before forming the carbonaceous material layer. It is preferable in view of the fact that the carbon-based material layer is reliably formed in the desired region of the conductor layer and the carbon-based material layer is not formed in the unnecessary portion.
[94] According to a first aspect of the present invention, there is provided a method of manufacturing a cold cathode field emission device, which is a cold cathode field emission device that constitutes a two-electrode cold cathode field emission display device. Way,
[95] (A) forming a cathode on the support;
[96] (B) forming an electron emitting portion on the cathode electrode,
[97] The electron emitting portion is made of a carbon-based material layer,
[98] The step of forming the electron-emitting part is characterized by comprising a step of forming a carbon-based material layer using a hydrocarbon-based gas and a fluorine-containing hydrocarbon-based gas.
[99] Moreover, the manufacturing method of the cold cathode field emission display device which concerns on the 1st aspect of this invention for achieving the said objective is a manufacturing method of the so-called cold cathode field emission display device of 2 electrode type | mold,
[100] The substrate on which the cathode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed, are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
[101] Cold cathode field emission device,
[102] (A) forming a cathode on the support;
[103] (B) forming on the cathode electrode in accordance with the step of forming an electron emitting portion;
[104] This electron-emitting part is made of a carbonaceous material layer,
[105] The step of forming the electron-emitting part is characterized in that the step of forming the carbonaceous material layer using a hydrocarbon gas and a fluorine-containing hydrocarbon gas.
[106] In the manufacturing method of the cold cathode field emission device which concerns on 1st aspect of this invention, or the manufacturing method of the cold cathode field emission display device which concerns on 1st aspect of this invention, said process (A) and process (B) And forming a selective growth region on the cathode electrode, wherein in the step (B), the electron emitting portion is formed on the selective growth region instead of forming the electron emitting portion on the cathode electrode. It is preferable in view of the fact that the carbon-based material layer is reliably formed in the desired region of the cathode electrode and the carbon-based material layer is not formed in the unnecessary portion.
[107] In addition, such a configuration is, for convenience, a method of manufacturing a cold cathode field emission device according to the first (1) aspect of the present invention, and a cold cathode field emission display according to the first aspect (1) of the present invention. It is called the manufacturing method of a device.
[108] According to a second aspect of the present invention, there is provided a method of manufacturing a cold cathode field emission device, which is a cold cathode field emission device that constitutes a two-electrode cold cathode field emission display device. Way,
[109] (A) forming a cathode on the support;
[110] (B) forming a carbon-based material layer on the cathode;
[111] (C) forming a fluorinated hydrocarbon thin film on the surface of the carbonaceous material layer by using a fluorine-containing hydrocarbon gas, thereby obtaining an electron emitting portion consisting of the carbonaceous material layer and the fluorocarbon thin film formed on the surface of the carbonaceous material layer. Characterized by the process.
[112] Moreover, the manufacturing method of the cold cathode field emission display device which concerns on the 2nd aspect of this invention for achieving the said objective is a manufacturing method of the so-called cold electrode field emission display device of 2 electrode type | mold,
[113] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
[114] Cold cathode field emission device,
[115] (A) forming a cathode on the support;
[116] (B) forming a carbon-based material layer on the cathode;
[117] (C) forms a fluorocarbon thin film on the surface of the carbon-based material layer using a fluorine-containing hydrocarbon gas, whereby the electron-emitting portion comprising the carbon-based material layer and the fluorocarbon thin film formed on the surface of the carbon-based material layer It is formed based on the process of obtaining.
[118] The manufacturing method of the cold cathode field emission device which concerns on the 3rd aspect of this invention for achieving the said objective is the manufacturing method of the cold cathode field emission device which comprises what is called a 2-electrode cold cathode field emission display device. ego,
[119] (A) forming a cathode on the support;
[120] (B) forming a carbon-based material layer on the cathode;
[121] (C) terminating (formula) the surface of the carbon-based material layer by using a fluorine-containing hydrocarbon gas, thereby obtaining an electron-emitting part composed of a carbon-based material layer whose surface is terminated (formula) with fluorine atoms. It features.
[122] Moreover, the manufacturing method of the cold cathode field emission display device which concerns on the 3rd aspect of this invention for achieving the said objective is the manufacturing method of the so-called cold electrode field emission display device of 2 electrode type | mold,
[123] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
[124] Cold cathode field emission device,
[125] (A) forming a cathode on the support;
[126] (B) forming a carbon-based material layer on the cathode;
[127] (C) terminating (formula) the surface of the carbon-based material layer using a fluorine-containing hydrocarbon gas, thereby obtaining an electron-emitting section comprising a carbon-based material layer whose surface is terminated with a fluorine atom (formula). It is characterized by forming.
[128] In the method for manufacturing a cold cathode field emission device according to the second or third aspect of the present invention, or the manufacture of a cold cathode field emission display device according to the second or third aspect of the present invention. In the method, in (B), it is preferable to form a carbon-based material layer using a hydrocarbon-based gas on the cathode electrode. In addition, such a configuration is, for the sake of convenience, a method for producing a cold cathode field emission device according to a second aspect or a third aspect of the present invention, a cold cathode field emission according to a second aspect or a third aspect of the present invention. It is called a manufacturing method of a display device.
[129] In this case, a step of forming a selective growth region on the cathode electrode is provided between the step (A) and the step (B), and in the step (B), an electron emitting portion is formed on the cathode electrode. Instead, it is preferable to form an electron emitting portion on the selective growth region from the viewpoint of reliably forming a carbon-based material layer in a desired region of the cathode electrode and not forming the carbon-based material layer in an unnecessary portion. In addition, for the convenience, the manufacturing method of the cold cathode field emission device which concerns on 2nd (A) aspect of this invention and 3A (1) aspect of this invention for convenience, 2A (1) aspect of this invention, 3A (1) It is called the manufacturing method of the cold cathode field emission display device which concerns on an aspect.
[130] Alternatively, in the method for manufacturing a cold cathode field emission device according to the second or third aspect of the present invention, the fifth, sixth, eighth, and ninth aspects of the present invention described later are further described. In the method for manufacturing a cold cathode field emission device according to the present invention, or in the method for manufacturing a cold cathode field emission display device according to the second or third aspect of the present invention, the present invention will be described later. In the method for manufacturing a cold cathode field emission display device according to the fifth, sixth, eighth, and ninth aspects of the present invention, in the step of forming an electron emission portion, a carbon nanotube structure is formed in the binder material. After apply | coating what was disperse | distributed on the cathode electrode, it can be set as the structure which forms a carbon type material layer by baking or hardening a binder material.
[131] More specifically, the dispersion of the carbon nanotube structure in an organic binder material such as epoxy resin or acrylic resin or inorganic binder material such as water glass is applied, for example, to a desired region of the cathode electrode. After that, the solvent may be removed, and the binder material may be baked or cured. As a coating method, the screen printing method can be illustrated.
[132] In addition, for the convenience, the manufacturing method of the cold cathode field emission device which concerns on 2nd, 3rd, 5th, 6th, 8th, and 9th aspect of this invention of this invention for convenience, this invention The method of manufacturing a cold cathode field emission display device according to Embodiment 2B, 3B, 5B, 6B, 8B, and 9B is referred to.
[133] Alternatively, in the method for manufacturing a cold cathode field emission device according to the second or third aspect of the present invention, the fifth, sixth, eighth, and ninth aspects of the present invention described later are further described. In the method for manufacturing a cold cathode field emission device according to the present invention, or in the method for manufacturing a cold cathode field emission display device according to the second or third aspect of the present invention, the present invention will be described later. In the method for manufacturing a cold cathode field emission display device according to the fifth, sixth, eighth, and ninth aspects of the present invention, in the step of forming an electron emitting portion, the metal in which the carbon nanotube structure is dispersed After apply | coating a compound solution on a cathode electrode, it can also be set as the structure which forms a carbonaceous material layer by baking a metal compound.
[134] In addition, for the convenience, the manufacturing method of the cold cathode field emission device which concerns on 2nd, 3rd, 5th, 6th, 8th, 9th aspect of this invention of this invention for convenience, this invention It is called the manufacturing method of the cold cathode field emission display device which concerns on 2nd, 3rd, 5th, 6th, 8th, and 9th aspect of this invention.
[135] The method for manufacturing a cold cathode field emission device according to the fourth to sixth aspects of the present invention for achieving the above object is a cold cathode field electron constituting a so-called three-electrode cold cathode field emission display device. The method of manufacturing the emitting device,
[136] (A) forming a cathode on the support;
[137] (B) forming an insulating layer on the support and the cathode;
[138] (C) forming a gate electrode having an opening on the insulating layer;
[139] (D) forming a second opening communicating with the opening formed in the gate electrode as an insulating layer, and exposing a cathode electrode to the bottom of the second opening;
[140] (E) forming an electron emitting portion on the cathode electrode exposed at the bottom of the second opening.
[141] Moreover, the manufacturing method of the cold cathode field emission display apparatus which concerns on the 4th-6th aspect of this invention for achieving the said objective is a manufacturing method of the so-called cold electrode field emission display apparatus of 3 electrode type,
[142] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
[143] Cold cathode field emission device,
[144] (A) forming a cathode on the support;
[145] (B) forming an insulating layer on the support and the cathode;
[146] (C) forming a gate electrode having an opening on the insulating layer;
[147] (D) forming a second opening communicating with the opening formed in the gate electrode as an insulating layer, and exposing a cathode electrode to the bottom of the second opening;
[148] (E) It forms in accordance with the process of forming an electron emission part on the cathode electrode exposed to the bottom part of a 2nd opening part.
[149] Furthermore, the manufacturing method of the cold cathode field emission device which concerns on 7th-9th aspect of this invention for achieving the said objective is the cold cathode which comprises what is called a 3-electrode cold cathode field emission display device. Method of manufacturing a cathode field emission device,
[150] (A) forming a cathode on the support;
[151] (B) forming an electron emitting portion on the cathode;
[152] (C) A step of forming a gate electrode having an opening on the upper side of the electron emitting portion is provided.
[153] Moreover, the manufacturing method of the cold cathode field emission display device which concerns on 7th-9th aspect for achieving the said objective is a manufacturing method of the so-called cold electrode field emission display device of 3 electrode type,
[154] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
[155] Cold cathode field emission device,
[156] (A) forming a cathode on the support;
[157] (B) forming an electron emitting portion on the cathode;
[158] (C) It forms in the upper part of an electron emission part based on the process of providing the gate electrode which has opening part.
[159] Then, the cold cathode field emission method according to the fourth and seventh aspects of the present invention, or the cold cathode field emission method according to the fourth and seventh aspects of the present invention. In the method,
[160] The electron-emitting part is made of a carbon-based material layer,
[161] The step of forming the electron-emitting portion is characterized in that the step of forming the carbonaceous material layer using a hydrocarbon gas and a fluorine-containing hydrocarbon gas.
[162] Moreover, the manufacturing method of the cold cathode field emission device which concerns on 5th, 8th aspect of this invention, or the manufacture of the cold cathode field emission display apparatus which concerns on 5th, 8th aspect of this invention. In the method,
[163] The electron emitting portion is made of a fluorocarbon thin film formed on the surface of the carbon-based material layer and the carbon-based material layer,
[164] The step of forming the electron emitting portion includes a step of forming a fluorine-based thin film using a fluorine-containing hydrocarbon gas on the surface of the formed carbon-based material layer.
[165] Moreover, the manufacturing method of the cold cathode field emission device which concerns on 6th, 9th aspect of this invention, or the cold cathode field emission display device which concerns on 6th, 9th aspect of this invention In the manufacturing method,
[166] The electron emitting portion is made of a carbonaceous material layer,
[167] The step of forming the electron-emitting portion includes a step of terminating (modifying) the surface of the formed carbon-based material layer using a fluorine-containing hydrocarbon gas.
[168] Moreover, the manufacturing method of the electron emitting device which concerns on 3rd aspect of this invention, the manufacturing method of the cold cathode field emission device which concerns on 3rd, 6th, 9th aspect of this invention, or this invention In the method for manufacturing the cold cathode field emission display device according to the third, sixth, and ninth aspects of the present invention, the terminal (formula) in the fluorine atom on the surface of the carbon-based material layer is fluorine-containing. It is preferable that it is performed using a hydrocarbon gas.
[169] In the manufacturing method of the cold cathode field emission device which concerns on 7th-9th aspect of this invention, or the manufacturing method of the cold cathode field emission display apparatus which concerns on 7th-9th aspect of this invention, ,
[170] Following the step (B), an insulating layer is formed on the entire surface,
[171] Subsequent to the above step (C), the second opening may be formed in the insulating layer in communication with the opening provided in the gate electrode, and the carbon-based material layer may be exposed at the bottom of the second opening.
[172] In the method for manufacturing a cold cathode field emission device according to the fifth, sixth, eighth, and ninth aspects of the present invention, or the fifth, sixth, and eighth aspects of the present invention. In the method for manufacturing the cold cathode field emission display device according to the ninth aspect, in the step of forming the electron emission portion, it is preferable to form a carbonaceous material layer using a hydrocarbon gas.
[173] In addition, such a configuration is, for convenience, a method for producing a cold cathode field emission device according to Embodiment 5A, Embodiment 6A, Embodiment 8A, and Embodiment 9A, Embodiment 5A, and Embodiment 6A of the present invention. The method of manufacturing a cold cathode field emission display device according to Embodiment 8A and Embodiment 9A is called.
[174] Alternatively, in the method for manufacturing a cold cathode field emission device according to the fourth, fifth, and sixth aspects of the present invention, or in the fourth, fifth, and sixth aspects of the present invention, In a related method of manufacturing a cold cathode field emission display device,
[175] Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
[176] In the step (B), an insulating layer is formed on the support, the selective growth region, and the cathode electrode,
[177] In the step (D), a second opening in communication with the opening formed in the gate electrode is formed in the insulating layer, and the selective growth region is exposed at the bottom of the second opening.
[178] In the step (E), the electron emitting portion may be formed on the selective growth region exposed to the bottom of the second opening.
[179] In addition, such a structure is a manufacturing method of the cold cathode field emission device which concerns on 4th (1) aspect, 5A (1) aspect, and 6A (1) aspect of this invention for convenience, and 4th of this invention. The manufacturing method of the cold cathode field emission display device which concerns on (1) aspect, 5 A (1) aspect, and 6 A (1) aspect is called.
[180] Alternatively, in the method for manufacturing a cold cathode field emission device according to the fourth, fifth, and sixth aspects of the present invention, or in the fourth, fifth, and sixth aspects of the present invention, In a related method of manufacturing a cold cathode field emission display device,
[181] Between the step (D) and the step (E), forming a selective growth region on the cathode electrode exposed at the bottom of the second opening,
[182] In the step (E), instead of forming the electron emitting portion on the cathode electrode exposed to the bottom of the second opening, the electron emitting portion can be formed on the selective growth region.
[183] Moreover, such a structure is a manufacturing method of the cold cathode field emission device which concerns on 4th (2) aspect, 5A (2) aspect, and 6A (2) aspect of this invention for convenience, and 4th of this invention. The manufacturing method of the cold cathode field emission display device which concerns on (2) aspect, 5 A (2) aspect, and 6 A (2) aspect is called.
[184] In the method for manufacturing a cold cathode field emission device according to the seventh, eighth, and ninth aspects of the present invention, or in addition, the cold according to the seventh, eighth, and ninth aspects of the present invention. In the manufacturing method of the negative field electron emission display device,
[185] Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
[186] In the step (B), instead of forming the electron emitting portion on the cathode electrode, the electron emitting portion may be formed on the selective growth region.
[187] In addition, such a configuration is, for convenience, a method for producing a cold cathode field emission device according to a seventh (1) aspect, an eighth (1) aspect, and a ninth (A) aspect of the present invention, and a seventh aspect of the present invention. The manufacturing method of the cold cathode field emission display device which concerns on (1) aspect, 8 A (1) aspect, and 9 A (1) aspect is called.
[188] An electron emitting device including the various states of the present invention or a method for manufacturing the same, a cold cathode field emission device or a method for manufacturing the same, a cold cathode field emission display device or a method for manufacturing the same (hereinafter, collectively referred to simply as the present invention) In some cases), methane (CH ₄ ), ethane (C ₂ H ₆ ), propane (C ₃ H ₈ ), butane (C ₄ H) ₁₀ ), hydrocarbon gas such as ethylene (C ₂ H ₄ ), acetylene (C ₂ H ₂ ), mixed gas thereof, mixed gas of hydrocarbon gas and hydrogen gas.
[189] Moreover, gas which vaporized methanol, ethanol, acetone, benzene, toluene, xylene, etc., or a mixed gas of these gases and hydrogen can also be used. In addition, a rare gas such as helium (He) or argon (Ar) may be introduced to stabilize the discharge and to promote plasma dissociation.
[190] Further, as the fluorine-containing hydrocarbon-based gas, perfluorocarbon acids, specifically, there may be mentioned a saturated hydrocarbon-based gas containing fluorine, CF ₄ gas, C ₂ F ₆ gas, C ₃ F ₈ gas. Examples of the unsaturated fluorine-containing hydrocarbon gas include C ₃ F ₄ gas and C ₄ F ₈ gas. Furthermore, hydrogen and fluorine-containing hydrocarbon gas may be used. Specifically, CH ₃ F gas and CH ₂ may be used. F ₂ can be mentioned.
[191] In general, the higher the proportion of the fluorine component constituting the fluorine-containing hydrocarbon gas, the more difficult the fluorocarbon-based thin film (CF _X thin film) based on the fluorine-containing hydrocarbon gas is to be deposited. That is, when forming a fluorocarbon thin film, it is preferable to use the fluorine-containing hydrocarbon gas with a low ratio of the fluorine component which comprises a fluorine-containing hydrocarbon gas, and terminate the surface of a carbonaceous material layer by a fluorine atom (formula) In this case, it is preferable to use a fluorine-containing hydrocarbon gas having a high ratio of the fluorine component constituting the fluorine-containing hydrocarbon gas.
[192] In the present invention, the carbon-based material layer can be composed of a graphite thin film, an amorphous carbon thin film, a diamond-like carbon thin film, a fullerene thin film, carbon nanotubes, or carbon nanofibers. As a method of forming a carbonaceous material layer in the case of forming a carbonaceous material layer using a hydrocarbon gas, a microwave plasma method, a transbonded plasma method, an inductively coupled plasma method, an electron cyclotron resonance plasma method, an RF plasma method The CVD method based on the helicon wave plasma CVD method, the capacitive coupling plasma CVD method, etc., and the CVD method using a parallel plate type CVD apparatus can be illustrated.
[193] In the form of the carbon-based material layer thus formed, a thin film or a plate form originally includes carbon whiskers, carbon nanotubes, carbon nanofibers, and specifically, nanocrystal diamond, nanocrystal graphite, carbon nano A tube, carbon nanofiber, a carbon sheet is mentioned. Depending on the formation conditions, the carbon-based material layer thus formed has a conical shape.
[194] Specific examples of the carbon nanotube structure include carbon nanotubes and / or carbon nanofibers. More specifically, the electron-emitting part may be configured from carbon nanotubes, the electron-emitting part may be configured from carbon nanofibers, or the electron-emitting part may be configured from a mixture of carbon nanotubes and carbon-nanofibers. . The carbon nanotubes and the carbon nanofibers may be in a powder form or a thin film form in a macroscopic manner. Carbon nanotube structures composed of carbon nanotubes or carbon nanofibers are known as PVD method such as arc discharge method or laser application method, plasma CVD method, laser CVD method, thermal CVD method, vapor phase synthesis method, and vapor growth method. It can manufacture and form by various CVD methods.
[195] The manufacturing method of the electron emitting device concerning 2nd C aspect and 3rd C aspect of this invention, The 2 C aspect, 3 C aspect, 5 C aspect, 6 C aspect, 8 C aspect, 9 C aspect of this invention In the method for manufacturing a cathode field emission device, the method for manufacturing a cold cathode field emission display device according to Embodiments 2C, 3C, 5C, 6C, 8C, and 9C of the present invention The carbon-nanotube structure is fixed to the surface of the cathode electrode or the conductor layer by a matrix containing metal atoms derived from a metal compound. The matrix is preferably made of a conductive metal oxide, and more preferably, composed of tin oxide, indium oxide, indium oxide-tin, zinc oxide, antimony oxide, or antimony oxide-tin.
[196] After firing, a state in which a part of each carbon nanotube structure is filled in the matrix can be obtained, and a state in which the entirety of each carbon nanotube structure is filled in the matrix can be obtained. It is desired that the volume resistivity of the matrix is 1 × 10 ⁻⁹ Ω · m to 5 × 10 ⁻⁶ Ω · m.
[197] As a metal compound which comprises a metal compound solution, an organometallic compound, an organic acid metal compound, or a metal salt (for example, chloride, nitrate, super acid salt) is mentioned. As an organic acid metal compound solution, an organotin compound, an organic indium compound, an organic zinc compound, an organoantimony compound is dissolved in an acid (for example, hydrochloric acid, nitric acid, or sulfuric acid), and this is an organic solvent (for example, toluene, acetic acid). Butyl, isopropyl alcohol).
[198] As the organometallic compound solution, an organic tin compound, an organic indium compound, an organic zinc compound, or an organic antimony compound dissolved in an organic solvent (for example, toluene, butyl acetate, isopropyl alcohol) can be exemplified. When the solution is 100 parts by weight, the composition is preferably 0.001 to 20 parts by weight of the carbon nanotube structure, 0.1 to 10 parts by weight of the metal compound, and an included composition. The dispersing agent and surfactant may be contained in the solution.
[199] In addition, from the viewpoint of increasing the thickness of the matrix, an additive such as, for example, carbon black may be added to the metal compound solution. In some cases, water may be used as the solvent instead of the organic solvent.
[200] As a method of applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode or a conductor layer, a spray method, a spin coding method, a tipping method, a diquater method, or a screen printing method can be exemplified. It is preferable to employ | adopt a method from a viewpoint of the ease of application | coating.
[201] After applying the metal compound solution in which the carbon nanotube structure is dispersed on the cathode electrode or the conductor layer, the metal compound solution is dried to form the metal compound layer, and then the unnecessary portion of the metal compound layer on the cathode electrode or the conductor layer. After the removal, the metal compound may be calcined. After firing the metal compound, the unnecessary portion may be removed on the cathode electrode or the conductor layer, or the metal compound solution may be applied only on the desired region of the cathode electrode or the conductor layer.
[202] The firing temperature of a metal compound is, for example, a temperature at which a metal salt is oxidized to become a conductive metal oxide, or a metal atom derived from an organic metal compound or an organic acid metal compound by decomposition of an organic metal compound or an organic acid metal compound. What is necessary is just the temperature which can form the matrix containing (for example, electroconductive metal oxide), for example, it is preferable to set it as 300 degreeC or more. The upper limit of the firing temperature may be a temperature at which thermal damage does not occur in the components of the electron-emitting device, the field-emitting device or the cathode panel.
[203] Method for producing an electron-emitting device according to Embodiments 2B, 3B, 2C, and 3C of the present invention, Embodiments 2B, 3B, 5B, 6B, and 8B of the present invention A cold cathode field electron according to a 9B embodiment of the invention, a method for manufacturing a cold cathode field emission device, a 2B embodiment, a 3B embodiment, a 5B embodiment, a 6B embodiment, a 8B embodiment, and a 9B embodiment of the present invention A method of manufacturing an emission display device, a method of manufacturing a cold cathode field emission device according to a second, third, fifth, sixth, eighth, or nineth aspect of the present invention; In the method for manufacturing a cold cathode field emission display device according to Embodiments 2C, 3C, 5C, 6C, 8C, and 9C, the carbon-based material layer is formed after the formation of the carbon-based material layer. A kind of activation treatment (cleaning treatment) of the surface of the electrode is one of the emission efficiency of electrons from the electron emission unit. Is preferable in terms of improvement.
[204] Examples of such treatment include plasma treatment in a gas atmosphere such as hydrogen gas, ammonia gas, helium gas, argon gas, neon gas, methane gas, ethylene gas, acetylene gas, nitrogen gas, and the like.
[205] The electron-emitting device according to the first to third aspects of the present invention in which the selective growth region is formed, the cold cathode field emission device according to the first to sixth aspects of the present invention in which the selective growth region is formed, of the present invention. In the cold cathode field emission display device according to the first to sixth aspects, the selective growth region is formed by attaching metal particles to the surface of the conductor layer or the cathode, or the surface of the conductor layer or the cathode. It is preferably formed by forming a metal thin film or an organometallic compound thin film.
[206] Cold cathode field emission device according to the fourth to sixth aspects of the present invention in which the selective growth region is formed, or cold cathode field electron emission according to the fourth embodiment to the sixth aspect of the present invention in which the selective growth region is formed. In the display device, the selective growth region may be formed on the portion of the cathode electrode positioned at the bottom of the opening, and is formed so as to extend from the portion of the cathode electrode positioned at the bottom of the opening to the portion of the cathode electrode other than the bottom of the opening. You may be. Further, the selective growth region may be formed on the entire surface of the surface of the cathode electrode portion located at the bottom of the opening portion or may be partially formed.
[207] The manufacturing method of the cold cathode field emission device which concerns on 4th (2) aspect, 5A (2) aspect, and 6A (2) aspect of this invention, 4th (2) aspect of this invention, 5A (2) In the method for manufacturing the cold cathode field emission display device according to the aspect and the sixth aspect (2), the step of forming a selective growth region on the surface of the cathode (hereinafter referred to as a selective growth region forming process), After forming the mask layer exposed by the surface of the cathode electrode at the center of the bottom of the second opening (that is, after forming the mask layer on at least the sidewall of the second opening), on the mask layer including the surface of the exposed cathode electrode. And attaching metal particles or forming a metal thin film or an organometallic compound thin film.
[208] The formation of such a mask layer is, for example, after forming a resist material layer or a hard mask material layer on the entire surface, and then, based on lithography, a resist material layer or hard mask material layer located at the center of the bottom of the second opening. It can be performed by the method of forming an empty part in the back.
[209] Part of the cathode electrode located at the bottom of the second opening, the side wall of the second opening, the side wall of the first opening, the insulating layer and the gate electrode are covered in the mask layer, the cathode located at the center of the bottom of the second opening Since the selective growth region is formed on the surface of the electrode, the cathode electrode and the gate electrode can be prevented from being short-circuited by the metal particles or the metal thin film. In some cases, only the gate electrode may be covered with a mask layer. Alternatively, only the top of the gate electrode in the vicinity of the first opening may be covered with a mask layer, or the sidewalls of the first and second openings may be covered with the mask layer in the vicinity of the first opening. In these cases, a carbon-based material layer is formed on the gate electrode by the conductive material constituting the gate electrode. However, if such a carbon-based material layer is not provided in a high intensity electric field, electrons are emitted from the carbon-based material layer. Not work It is also preferable to remove the mask layer before forming the carbonaceous material layer on the selective growth region.
[210] The selective growth region forming step is a step of attaching metal particles on a portion of the cathode electrode on which the selective growth region is to be formed, or forming a metal thin film or an organometallic compound thin film, thereby forming a surface of the cathode electrode portion. It is desirable to obtain a selective growth region formed by adhesion of metal particles or a selective growth region formed by forming a metal thin film or an organometallic compound thin film on the surface.
[211] Further, in order to make the selective growth of the carbon-based material layer in the selective growth region more reliable, the metal particles are attached to the surface of the cathode electrode or the metal particles are formed after the metal thin film or the organometallic compound thin film is formed. It is preferable to remove the metal oxide (so-called natural oxide film) on the surface of the surface or the surface of the metal thin film or the organic metal compound thin film.
[212] Removal of metal oxides from the surface of metal particles or the surface of metal thin films or organometallic compound thin films, for example, microwave plasma method, trans-coupled plasma method, inductively-coupled plasma method, electron cyclotron resonance in hydrogen gas atmosphere It is preferable to carry out by the plasma reduction process based on a plasma method, the RF plasma method, the spatter process in argon gas atmosphere, or the washing process using an acid or base, such as hydrofluoric acid, for example.
[213] The step of removing the metal oxide on the surface of the metal particles or the surface of the metal thin film or the organometallic compound thin film is preferably performed in the step immediately before the step of forming the carbon-based material layer on the selective growth region. Moreover, also when manufacturing the electron emission apparatus of this invention, the various process demonstrated above can be applied on the part of the conductor layer which should form a selective growth area. The portion of the conductor layer on which the selective growth region is to be formed and the portion of the cathode electrode on which the selective growth region is to be formed are sometimes referred to as only the conductor layer portion and the cathode electrode portion.
[214] As a method of attaching the metal particles to the conductor layer portion or the cathode electrode portion, for example, an area other than the region of the conductor layer or the cathode electrode on which the selective growth region should be formed is covered with a suitable material (for example, a mask layer). In one state, a layer comprising a solvent and metal particles is formed on the conductor layer portion or the cathode electrode portion, and then the solvent is removed to leave the metal particles.
[215] Alternatively, as a step of attaching metal particles on the conductor layer portion or the cathode electrode portion, for example, a region other than the region of the conductor layer or the cathode electrode on which the selective growth region should be formed is formed of a suitable material (for example, a mask). Layer), the metal compound particles containing the metal atoms constituting the metal particles are attached to the surface of the conductor layer or the cathode, and then analyzed by heating the metal compound particles, followed by the conductor layer or the cathode electrode. And a method of obtaining a selective growth region formed by metal particles adhering to the surface of the portion of . In this case, specifically, after forming the layer which consists of a solvent and a metal compound particle on the conductor layer part or the cathode electrode part, the method of removing a solvent and leaving a metal compound particle can be illustrated.
[216] The metal compound particles are composed of at least one material selected from the group consisting of halides (for example, iodide, chloride, bromide, etc.), oxides, hydroxides, and organometals of the metal constituting the metal particles. desirable.
[217] In these methods, at a suitable step, a material (for example, a mask layer) covering a region other than the region of the conductor layer or the cathode electrode on which the selective growth region should be formed is removed.
[218] As a method of forming a metal thin film on the conductor layer portion or the cathode electrode portion, depending on the material constituting the metal thin film, for example, a region other than the region of the conductor layer or cathode electrode to which the selective growth region should be formed is appropriate. Electroplating or electroless plating in the state of coating with a material means plating, chemical vapor deposition (CVD, Chemical Vapor Deposition) including MOCVD, physical vapor deposition (PVD, Physical Vapor Deposition), The method of thermally decomposing an organometallic compound is mentioned.
[219] Alternatively, as a physical vapor deposition method, (a) various types of vacuum deposition such as electron beam heating, resistance heating, flash deposition, (b) plasma deposition, (c) dipole sputtering, direct current sputtering, direct current magnetron spatter Various sputtering methods such as terring method, high frequency sputtering method, magnetron sputtering method, ion beam sputtering method, bias sputtering method, (d) DC (direct current) method, RF method, multi-cathode method, activation reaction method, Various ion plating methods, such as a field deposition method, a high frequency ion plating method, and a reactive ion plating method, are mentioned.
[220] The metal particles or metal thin films constituting the selective growth region include molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), cobalt (Co), tungsten (W), zirconium (Zr) and tantalum ( Ta, iron (Fe), copper (Cu), platinum (Pt), zinc (Zn), cadmium (Cd), germanium (Ge), tin (Sn), lead (Pb), bismuth (Bi), silver ( It is preferably composed of at least one metal selected from the group consisting of Ag), gold (Au), indium (In) and thallium (Tl).
[221] The organometallic compound thin film constituting the selective growth region is at least one selected from the group consisting of zinc (Zn), tin (Sn), aluminum (Al), lead (Pb), nickel (Ni), and cobalt (Co). It can be made into the state comprised with the organometallic compound containing an element of a species, Furthermore, it is preferable that it is comprised with a complex compound.
[222] Here, as the ligand constituting the complex compound, acetylacetone, hexafluoro acetylacetone, dipivaloylmethane, cyclopentadienyl can be exemplified. In addition, the formed organometallic compound thin film may partially contain a decomposition product of the organometallic compound.
[223] The step of forming the organometallic compound thin film on the conductor layer portion or the cathode electrode portion can be constituted by the step of forming a layer of the organometallic compound solution on the conductor layer portion or the cathode electrode portion, or the organic metal. After subliming the compound, the organometallic compound may be formed by depositing the organic metal compound on the conductive layer portion or the cathode electrode portion. In these cases, the organometallic compound thin film constituting the selective growth region is selected from the group consisting of zinc (Zn), tin (Sn), aluminum (Al), lead (Pb), nickel (Ni) and cobalt (Co). It is preferable that it is comprised from the organometallic compound containing at least 1 sort (s) of an element, Furthermore, it is further more preferable that it is comprised from a complex compound.
[224] Here, as a ligand which comprises a complex compound, acetyl acetone, hexa fluoro acetyl acetone, dipivaloyl methate, and cyclopentadienyl can be illustrated. In addition, the formed organometallic compound thin film may partially contain a decomposition product of the organometallic compound.
[225] In the method for manufacturing a cold cathode field emission device according to the fourth to ninth aspects of the present invention, or the method for manufacturing a cold cathode field emission display device according to the fourth to ninth aspects of the present invention. A method of forming a gate electrode having a first opening on an insulating layer, comprising: forming a conductive material layer for forming a gate electrode on the insulating layer, and then forming a patterned first mask material layer on the conductive material layer And patterning the conductive material layer by etching the conductive material layer using the first mask material layer as an etching mask, and then removing the first mask material layer, and then patterning the conductive material layer and the insulating layer. The method of forming a 1st opening part by forming a 2nd mask material layer and etching a electrically conductive material layer using this 2nd mask material layer as an etching mask can be illustrated. Or the method of forming the gate electrode which has a 1st opening part directly by the screen printing method can be illustrated, for example. In these cases, the method of forming in the insulating layer the second opening communicating with the first opening formed in the gate electrode may be a method of etching the insulating layer using such a second mask material layer as an etching mask. The insulating layer may be etched using the first opening formed in the gate electrode as an etching mask. The first opening and the second opening have a one-to-one correspondence. That is, one second opening is formed corresponding to one first opening.
[226] Alternatively, the method for manufacturing a cold cathode field emission device according to the seventh to ninth aspects of the present invention, or the cold cathode field emission display device according to the seventh to ninth aspects of the present invention. In the method, the step of providing a gate electrode having an opening on an upper side of the carbonaceous material layer or a step of providing a gate electrode having an opening on an upper side of the selective growth region includes an object made of an insulating material on a support. A gate electrode support member of the carbon-based material layer or an upper surface of the selective growth region so that the gate electrode is formed of an object or sheet metal layer having a plurality of openings and is in contact with the top surface of the gate electrode support member. You may hang a metal layer taut.
[227] When the cold cathode field emission display device is made of a so-called three-electrode type, the external shape of the cathode electrode is made into a stripe shape, and the external shape of the gate electrode is made into a stripe shape. The extending direction of the striped cathode electrode and the striped gate electrode is different. It is preferable that the dead image of the striped cathode electrode and the dead image of the striped gate electrode are perpendicular to each other. Further, one or a plurality of selective growth regions are located in a region where the four images of these electrodes overlap each other (corresponding to one pixel area, which is an electron emission region where the cathode electrode and the gate electrode overlap). In addition, these electron emission regions are usually arranged in a two-dimensional matrix in the effective region (the region serving as the actual display portion) of the cathode panel.
[228] When the cold cathode field emission display device is a so-called two-electrode type, the outer shape of the cathode electrode is made into a stripe shape, and the outer shape of the anode electrode is made into a stripe shape. Alternatively, the external shape of the cathode electrode can be made into a shape corresponding to one pixel, and the anode electrode can be made into a sheet shape covering the effective area.
[229] The planar shape of the first opening portion or the second opening portion (shape when the openings are cut in a virtual plane parallel to the cathode electrode) may be circular, elliptical, rectangular, polygonal, rounded rectangle, rounded polygon, or the like. It can be set as arbitrary shapes. As described above, the first opening can be formed by, for example, a combination of isotropic etching, anisotropic etching and isotropic etching, or a method of forming a gate electrode. By this, the first opening can be directly formed. Formation of a 2nd opening can also be performed by the combination of an isotropic etching, anisotropic etching, and an isotropic etching, for example.
[230] The carbon-based material layer may be formed on the surface of the cathode electrode portion located at the bottom of the second opening, and the portion of the cathode electrode other than the bottom of the second opening at the portion of the cathode electrode located at the bottom of the second opening. It may be extended to the surface. The carbonaceous material layer may be formed on the entire surface of the surface of the portion of the cathode electrode located at the bottom of the second opening, or may be partially formed.
[231] In the present invention, the structure of the conductor layer and the cathode electrode may be one layer structure of the conductor layer, and the three layers of the upper conductive material layer formed on the lower conductive material layer, the lower conductive material layer, and the upper conductive material layer formed on the resistor layer. It can also be set as a layer structure. In the latter case, a selective growth region is formed on the surface of the upper material layer. Thus, by providing a resistor layer, the electron emission characteristic of an electron emission part can be equalized. Examples of the material constituting the resistor layer include carbonaceous materials such as silicon carbide (SiC) and SiCN, semiconductor materials such as SiN and amorphous silicon, and high melting point metal oxides such as ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride. Can be. As a method of forming the resistor layer, a sputtering method, a CVD method or a screen printing method can be exemplified. The resistance value is generally 1 × 10 ⁵ to 1 × 10 ⁷ Ω, preferably several MΩ.
[232] When the cold cathode field emission display device is a so-called three-electrode type, a second insulating layer may be provided again on the gate electrode and the insulating layer, and a convergence electrode may be provided on the second insulating layer. Alternatively, a converging electrode may be provided above the gate electrode. Here, the convergence electrode is an electrode for converging the trajectory of the emission electrons emitted from the opening toward the anode, thereby enabling improvement of luminance and prevention of optical crosstalk between adjacent pixels. In the so-called high-voltage cold cathode electroluminescence display of a high voltage type, the convergence electrode is particularly high in the potential difference between the anode electrode and the cathode electrode in the order of several kilovolts, and the distance between the anode electrode and the cathode electrode is relatively long. Valid. A relative negative voltage is applied to the convergence electrode in the convergence electrode control circuit. The converging electrode does not necessarily need to be provided for each cold cathode field emission device, and for example, it extends along a predetermined arrangement direction of the cold cathode field emission device, thereby providing a plurality of cold cathode field emission devices. It may have a common procedure effect.
[233] In the method for manufacturing a cold cathode field emission display device according to the first to ninth aspects of the present invention, in the case where the substrate and the support are joined at the periphery, the bonding may be performed using an adhesive layer, or glass or ceramic. You may use together the frame body which consists of insulating rigid materials, such as these, and an adhesive layer. When using together a frame and an adhesive layer, it is possible to set the opposing distance between a board | substrate and a support body longer than when using only a contact layer by selecting the height of a frame suitably. As the constituent material of the adhesive layer, frit glass is generally used, but a so-called low melting point metal material having a melting point of about 120 to 400 ° C may be used. As such a low melting metal material, In (indium: melting | fusing point 157 degreeC); Indium-gold low melting point alloys; Tin (Sn) -based high temperature solders such as Sn ₈₀ Ag ₂₀ (melting point 220 to 370 ° C) and Sn ₉₅ Cu ₅ (melting point 227 to 370 ° C); Lead (Pb) high temperature solders such as Pb _97.5 Ag _2.5 (melting point 304 ° C.), Pb _94.5 Ag _5.5 (melting point 304 to 365 ° C.), and Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C.); Zinc (Zn) -based high temperature solders such as Zn ₉₅ A ₁₅ (melting point 380 ° C.); Tin-lead-based standard solders such as Sn ₅ Pb ₉₅ (melting point 300 to 314 ° C) and Sn ₂ Pb ₉₈ (melting point 316 to 322 ° C); Examples of the lead agent such as Au ₈₈ Ga ₁₂ (melting point of 318 ° C) (the above subscripts all represent atomic%) can be exemplified.
[234] In the case of joining the substrate, the support and the three members of the frame, three-way simultaneous bonding may be performed, or in the first step, one of the substrate or the support and the frame are first bonded, and in the second step, the other side of the substrate or the support. You may join with a frame. When the three-way simultaneous bonding or the bonding in the second step is performed in a high vacuum atmosphere, the space enclosed by the substrate, the support, the frame and the adhesive layer becomes a vacuum at the same time as the bonding. Alternatively, after completion of the bonding of the three characters, the space surrounded by the substrate, the support, the frame, and the adhesive layer may be evacuated and vacuumed. When exhausting after joining, the pressure in the atmosphere at the time of joining may be either atmospheric pressure or reduced pressure, and the gas constituting the atmosphere may be the atmosphere or a gas belonging to nitrogen gas or group 0 of the periodic table (for example, Ar gas) may be used.
[235] When exhausting after joining, exhausting can be performed through the chip tube previously connected to the substrate and / or the support. The chip tube is typically formed using a glass tube, and is formed of frit glass or the above-described low melting point around the through hole provided in the ineffective region of the substrate and / or the support (ie, the region other than the effective region serving as the display portion). Joined using a metal material, the space reaches a predetermined degree of vacuum, and is then cut by thermal fusion. In addition, if the entire cold cathode field emission display is heated and then cooled before the incision, residual gas can be released into the space, and the residual gas can be removed out of the space by exhausting.
[236] The support for constituting the cathode panel may be a glass substrate, a glass substrate having an insulating film formed on the surface thereof, a quartz substrate, a quartz substrate having an insulating film formed on the surface thereof, or a semiconductor substrate having an insulating film formed on the surface thereof. In view of the reduction in manufacturing cost, it is preferable to use a glass substrate or a glass substrate having an insulating film formed on its surface. Glass substrates include high distortion glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₂ · SiO ₂ ), and polysterite (2MgO) SiO ₂ ) and lead glass (Na ₂ O.PbO.SiO ₂ ) can be exemplified. The board | substrate which comprises an anode panel can also be comprised like a support body. Also in the electron-emitting device of the present invention, the conductor layer needs to be formed on the support, but such a support may be composed of an insulating material or a support constituting the cathode panel described above.
[237] Electron emitting device according to the first, second, third, third aspect of the present invention, the first, second, third, third, fourth, fifth, and sixth aspects of the present invention Cold cathode field emission device and a cold cathode field emission display device according to the first, second, third, third, fourth, fifth, sixth, sixth, sixth embodiments of the present invention, or a manufacturing method thereof In the manufacturing method of the cold cathode field emission device or the cold cathode field emission device according to the seventh, eighth, and ninth aspects, the conductor layer or the cathode electrode is made of copper (Cu). Is composed of silver (Ag) or gold (Au) to reduce the resistance of the conductor layer or the cathode, and to form the carbon-based material layer reliably using a hydrocarbon gas without providing a selective growth region. Preferred at
[238] In the case where the selective growth region is provided or when the carbon-based material layer is formed of a carbon-nanotube structure, tungsten (W), niobium (Nb), and tantalum (Ta) are used as materials for forming a conductor layer or a cathode electrode. ), Titanium (Ti), molybdenum (Mo), chromium (Cr), aluminum (Al), copper (Cu), gold (Au), silver (Ag), nickel (Ni), iron (Fe), zirconium (Zr) Metals such as; Alloys or compounds containing these metal elements (for example, nitrides such as TiN and silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ); Semiconductors such as silicon (Si); Carbon thin films such as diamond; ITO (indium tin oxide) can be illustrated. The thickness of the cathode electrode is roughly 0.05 to 0.5 µm, preferably 0.1 to 0.3 µm, but is not limited to this range.
[239] Tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), chromium (Cr), aluminum (Al), copper (Cu), gold as conductive materials constituting the gate electrode At least one metal selected from the group consisting of (Au), silver (Ag), nickel (Ni), cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), and zinc (Zn); Alloys or compounds containing these metal elements (for example, nitrides such as TiN or silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ); Or semiconductors such as silicon (Si); Conductive metal oxides, such as ITO (indium tin oxide), indium oxide, and zinc oxide, can be illustrated.
[240] As the method of forming the cathode electrode or the gate electrode, for example, the electron beam deposition method or the hot filament deposition method may be a deposition method, a sputtering method, a combination of a CVD method, an ion plating method, an etching method, a screen printing method, a plating method, a lift-off method, or the like. Can be mentioned. According to the screen printing method or the plating method, it is possible to form, for example, a striped cathode electrode or a gate electrode directly.
[241] As a constituent material of the insulating layer or the second insulating layer, SiO ₂ , BPSG, PSG, BSG, AsSG, PbSG, SiON, SOG (spin-on glass), low melting glass, SiO ₂ based materials such as glass paste, SiN, polyimide Insulating resin, such as these, can be used individually or in combination of red. A well-known process, such as a CVD method, a coating method, the sputtering method, the screen printing method, can be used for formation of an insulating layer and a 2nd insulating layer.
[242] The constituent material of the anode electrode may be selected depending on the configuration of the cold cathode field emission display device. That is, when the cold cathode field emission display device is of a transmissive type (substrate corresponds to the display portion) and the anode electrode and the phosphor layer are laminated in this order on the substrate, the substrate on which the anode electrode is formed is originally Since the anode electrode itself needs to be transparent, a transparent conductive material such as ITO (indium tin oxide) is used. On the other hand, even in the case where the cold cathode field emission display device is a reflection type (support is equivalent to the display portion) and a transmission type, a phosphor layer and an anode electrode are stacked in this order on the substrate (the anode electrode also serves as a metal thin film). ), In addition to ITO, the above-mentioned materials can be appropriately selected and used in relation to the cathode electrode, the gate electrode and the convergence electrode, but more preferably, aluminum (Al) or chromium (Cr) is used. In the case of forming the anode electrode from aluminum (Al) or chromium (Cr), the thickness of the anode electrode is specifically 3 x 10 ^-8 m (30 nm) to 1.5 x 10 ^-7 m (150 nm). 5 × 10 ⁻⁸ m (50 nm) to 1 × 10 ⁻⁷ m (100 nm) can be exemplified. The anode electrode can be formed by vapor deposition or sputtering.
[243] As the phosphor layer constituting the phosphor layer, a phosphor for high-speed electron excitation or a phosphor for low-speed electron excitation can be used. In the case where the cold cathode field emission display device is a monochrome display device, the phosphor layer does not have to be particularly patterned. In addition, when the cold cathode field emission display device is a color display device, phosphor layers corresponding to three primary colors of red (R), green (G), and blue (B) patterned in a stripe shape or a dot shape are alternately arranged. It is desirable to. The gap between the patterned phosphor layers may be filled with a black matrix for the purpose of improving the contrast of the display screen.
[244] As an example of the structure of an anode electrode and a phosphor layer, (1) a structure in which an anode electrode is formed on a substrate, and a phosphor layer is formed on the anode electrode; (2) a phosphor layer is formed on a substrate, and a phosphor layer is formed on the phosphor layer. The structure which forms an anode electrode in the is mentioned. In the configuration of (1), a so-called metal thin film may be formed on the phosphor layer. In addition, in the structure of (2), you may form a metal thin film on an anode electrode.
[245] The anode panel again prevents electrons semiconducting from the phosphor layer or secondary electrons emitted from the phosphor layer from entering the other phosphor layer, so that optical crosstalk (cloudy color) occurs. Or to prevent the electrons colliding with other phosphor layers when electrons penetrating from the phosphor layer or secondary electrons emitted from the phosphor layer penetrate the partition and enter another phosphor layer. It is preferable that a plurality of partitions are provided.
[246] The planar shape of the partition wall is a lattice shape, that is, a shape corresponding to one pixel, for example, a shape in which the planar shape surrounds the four sides of a substantially rectangular (dot) phosphor layer, or almost The object shape or stripe shape extended in parallel with two opposing sides of a rectangular or striped fluorescent substance layer is mentioned. When the partition wall is made into a lattice shape, it may be a shape that continuously surrounds the four sides of one phosphor layer region, or may be a shape that surrounds the discontinuously. In the case where the partition wall has an object shape or a stripe shape, it may be a continuous shape or a discontinuous shape. After the partition is formed, the partition may be polished to planarize the top surface of the partition.
[247] It is preferable that a black matrix for absorbing light from the phosphor layer is formed between the partition wall and the substrate between the phosphor layer and the phosphor layer from the viewpoint of improving the contrast of the display image. As the material constituting the black matrix, it is preferable to select a material that absorbs 99% or more of light from the phosphor layer. As such a material, carbon, a thin metal film (for example, chromium, nickel, aluminum, molybdenum, or an alloy thereof), a metal oxide (for example, chromium oxide), a metal nitride (for example, chromium nitride) ), Heat-resistant organic resin, glass paste, glass paste containing conductive particles such as black pigment and silver, and the like. Specific examples thereof include photosensitive polyimide resin, chromium oxide, and chromium oxide / chromium oxide laminated film. can do. In the chromium oxide / chromium laminated film, the chromium film is in contact with the substrate.
[248] The electron-emitting device of the present invention can be applied not only to the electron-emitting portion of a cold cathode field electron-emitting device but also to various electron sources and fluorescent display tubes exemplified in the electron source in the electron gun incorporated in the cathode ray tube. I can put it.
[249] In the electron-emitting device according to the first to third aspects of the present invention, the cold cathode field emission device according to the first to third aspects of the present invention, or the first to third aspects of the present invention. In the related cold cathode field emission display, in order to emit electrons from the carbonaceous material layer, the carbonaceous material layer is placed in an appropriate electric field (for example, an electric field having an intensity of about 10 ⁷ volts / m). It is good to do. In the cold cathode field emission device or the cold cathode field emission display device according to the fourth to sixth aspects of the present invention, an electric field formed by applying a voltage to the cathode electrode and the gate electrode (for example, 10 ⁷ volts). electrons are emitted from the electron-emitting portion of the carbon-based material layer based on the electric field having an intensity of about / m). And an image can be obtained by protruding these electrons to a fluorescent substance layer.
[250] In the present invention, the carbonaceous material layer is formed using a hydrocarbon gas and a fluorine-containing hydrocarbon gas, or a fluorocarbon thin film is formed on the surface of the carbonaceous material layer, or the carbonaceous material layer Since the surface of is terminated by a fluorine atom, the electron-emitting part expresses a kind of water repellency, and is a gas or gaseous substance, especially moisture, emitted from various members constituting a cathode electrode or a cold cathode field emission display device. As a result of being able to suppress the adhesion and adsorption to the electron emitting portion (specifically, the carbon-based material layer), it is possible to prevent deterioration of the characteristics of the electron emitting portion. Furthermore, since the electron-emitting part is composed of a carbon-based material layer, a cold cathode field emission device having a high electron emission efficiency can be obtained.
[251] In addition, in the present invention, when the electron-emitting portion of the carbon-based material layer is formed on the selective growth region, a kind of catalytic reaction can be expected on the surface of the selective growth region, and in the initial growth stage of the carbon-based material layer, Nucleation proceeds smoothly, and this nucleation promotes the subsequent growth of the carbonaceous material layer, and an electron emitting portion made of the carbonaceous material layer can be provided at a desired portion of the conductor layer or the cathode electrode. Moreover, it is not necessary to pattern the carbonaceous material layer to make the carbonaceous material layer a desired shape. Furthermore, a carbon-based material layer for forming the carbon-based material layer in a desired shape by forming an electron-emitting portion made of a carbon-based material layer on a portion of the cathode electrode which is located at the bottom of the opening and has a function as a kind of catalyst. There is no need for patterning. In addition, when the electron emitting portion is formed of the carbon nanotube structure, the electron emitting portion can be easily formed.
[273] EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated based on an Example with reference to drawings.
[274] (Example 1)
[275] Example 1 is the electron-emitting device and manufacturing method thereof according to the first aspect of the present invention, and the cold cathode field-emitting device according to the first aspect of the present invention (hereinafter referred to as field emission element). A cold cathode field emission display device according to one embodiment (hereinafter abbreviated as display device), a method of manufacturing a field emission device according to the first embodiment (more specifically, the first (1) embodiment); The manufacturing method of the display apparatus which concerns on a 1st aspect (more specifically, 1st (1) aspect) is related. In addition, the display apparatus in Example 1-Example 4 is what is called a 2-electrode type display apparatus.
[276] A schematic partial sectional view of the display device of Example 1 is shown in FIG. 1, and a schematic perspective view of one field emission device or electron emission device is shown in FIG. 2, and a schematic partial cross sectional view of one field emission device or electron emission device. Is shown in FIG. 3D.
[277] The electron-emitting device or field emission device of Example 1 is composed of a cathode electrode (conductor layer) 11 having a selective growth region 20 formed on its surface and a carbon-based material layer 23 formed on the selective growth region 20. It consists of the electron emission part 15 which comprises. Here, the selective growth region 20 is composed of metal particles 21 attached to the surface of the cathode electrode (conductor layer) 11. The carbonaceous material layer 23 is formed using a hydrocarbon gas (specifically, CH ₄ ) and a fluorine-containing hydrocarbon gas (specifically, CF ₄ ).
[278] The display device of the first embodiment is composed of the cathode panel CP and the anode panel AP in which a plurality of electron emitting devices or field emission devices as described above are formed in the effective area in a two-dimensional matrix form, and a plurality of pixels are formed. Have The cathode panel CP and the anode panel AP are joined through the frame 34 at their peripheral edges. In addition, a through hole (not shown) for vacuum exhaust is provided in the ineffective region of the cathode panel CP, and a chip tube (not shown) which is cut after vacuum exhaust is connected. The frame 34 is made of ceramics or glass and has a height of, for example, 1.0 mm. In some cases, only the adhesive layer may be used instead of the frame 34.
[279] The anode panel AP is formed of the substrate 30, the phosphor layer 31 formed on the substrate 30, and formed of a sheet-like, for example, aluminum thin film covering the entire surface of the effective region. It consists of the anode electrode 33 which comprises. The black matrix 32 is formed on the substrate 30 between the phosphor layer 31 and the phosphor layer 31. It is also possible to omit the black matrix 32. In addition, when a monochromatic display device is assumed, the phosphor layer 31 does not need to be provided in a predetermined pattern. The anode electrode made of a transparent conductive film such as ITO may be provided between the substrate 30 and the phosphor layer 31, or the anode electrode 33 made of a transparent conductive film provided on the substrate 30, and the anode A phosphor layer 31 and a black matrix 32 formed on the electrode 33 and aluminum formed on the phosphor layer 31 and the black matrix 32 and electrically connected to the anode electrode 33. It can also be comprised from a reflective conductive film.
[280] One pixel is formed of a phosphor layer 31 arranged in the effective area of the anode panel AP so as to face a rectangular cathode electrode 11, an electron emitting portion 15 formed thereon, and an electron emitting device or a field emitting element. It is comprised by). In the effective area, such pixels are arranged in hundreds of thousands to millions of orders, for example.
[281] In addition, the spacer 35 is arranged in the effective area at equal intervals as an auxiliary means for maintaining a constant distance between the panels between the cathode panel CP and the anode panel AP. The shape of the spacer 35 is not limited to a columnar shape, for example, may be a spherical shape, or may be a stripe rib (rib). In addition, the spacer 35 does not necessarily need to be arranged at four corners of the overlapping regions of all the anode electrodes / cathode electrodes, and may be arranged more sparsely or irregularly.
[282] In this display device, the voltage applied to the cathode electrode 11 in units of one pixel is controlled. As shown in FIG. 2, the planar shape of the cathode electrode 11 is substantially rectangular, and each cathode electrode 11 is formed of a wiring 11A and, for example, a TFT or a transistor (not shown). Is connected to the cathode electrode control circuit 40A. The anode electrode 33 is connected to the anode electrode control circuit 42. When a voltage equal to or greater than the threshold voltage is applied to each of the cathode electrodes 11, electrons are emitted from the electron emission unit 15 based on the quantum tunnel effect based on the electric field formed by the anode electrode 33. It is pulled by the anode electrode 33 and collides with the phosphor layer 31. The luminance is controlled by the voltage applied to the cathode electrode 11.
[283] Hereinafter, the method of manufacturing the electron-emitting device, the field-emitting device and the display device in Example 1 will be described with reference to FIGS. 3A to 3 and FIGS. In Example 1, nickel (Ni) was used as a material constituting the selective growth region 20. In FIGS. 3A to 3, only one electron emitting unit (electron emitting device) or components thereof are shown on the cathode electrode (conductor layer) 11 for the sake of simplicity.
[284] [Process-100]
[285] First, a conductive material layer for forming a cathode electrode is formed on a support 10 made of, for example, a glass substrate, and then the conductive material layer is patterned based on a known lithography technique and a reactive ion etching method (RIE method). Thus, a rectangular cathode electrode (conductor layer) 11 is formed on the support 10 (see Fig. 3A). At the same time, a wiring 11A (see FIG. 2) connected to the cathode electrode (conductor layer) 11 is formed on the support 10. The conductive material layer is made of, for example, an aluminum (A1) layer having a thickness of about 0.2 μm formed by the sputtering method.
[286] [Process-110]
[287] Next, the selective growth region 20 is formed on the surface of the cathode electrode (conductor layer) 11. Specifically, first, the resist material layer is formed on the entire surface by spin coating, and then the cathode electrode (conductor layer) 11 portion (cathode electrode portion) on which the selective growth region 20 should be formed based on the lithography technique. ), A mask layer 16 (composed of a mask material layer) is formed to expose the surface of the mask (see FIG. 3B). Next, metal particles are deposited on the mask layer 16 including the surface of the exposed cathode electrode (conductor layer) 11. Specifically, a solution in which nickel (Ni) fine particles are dispersed in a polysiloxane solution (using isopropyl alcohol as a solvent) is applied to the entire surface by spin coating, and a layer made of a solvent and metal particles is formed on the cathode electrode portion. . Thereafter, the mask layer 16 is removed, the solvent is removed by heating to about 400 ° C., and the metal particles 21 are left on the exposed surface of the cathode electrode (conductor layer) 11, thereby forming the selective growth region 20. ) Can be obtained (see FIG. 3C). The polysiloxane also has a function of fixing the metal particles 21 on the exposed surface of the cathode electrode (conductor layer) 11 (so-called adhesion function).
[288] [Process-120]
[289] Thereafter, on the cathode electrode (conductor layer) 11, an electron emitting portion 15 made of the carbon-based material layer 23 is formed using a hydrocarbon-based gas and a fluorine-containing hydrocarbon-based gas. Specifically, in Example 1, on the selective growth region 20, a carbon-based material layer 23 having a thickness of about 0.2 µm is formed by using a hydrocarbon gas and a fluorine-containing hydrocarbon gas, and the electron-emitting part Get 15. This state is shown in FIG. 3D. The film forming conditions of the carbonaceous material layer 23 based on the microwave plasma CVD method are illustrated in Table 1 below. In the film forming conditions of the conventional carbon-based material layer, a film forming temperature of about 900 ° C. is required. In Example 1, stable film forming at a film forming temperature of 500 ° C. was achieved. The carbonaceous material layer does not grow on the cathode electrode (conductive layer) 11 and the wiring 11A made of aluminum.
[290] TABLE 1
[291] [Film Formation Conditions of Carbon-Based Material Layer]
[292] Gas used: CH ₄ / H ₂ / CF ₄ = 100/10 / 10SCCM
[293] Pressure: 1.3 × 10 ³ Pa
[294] Microwave Power: 500W (13.56MHz)
[295] Film formation temperature: 500 ℃
[296] Under the conditions for forming the carbon-based material layer shown in Table 1, microporous carbon nanotubes are formed microscopically, and at the same time, a fluorocarbon material (CF _X ) is collected inside the carbon nanotubes. The carbonaceous material layer 23 is formed, and a kind of water repellency is expressed as the carbonaceous material layer 23 as a whole.
[297] [Process-130]
[298] Thereafter, the display device is assembled. Specifically, the anode panel AP and the cathode panel CP are disposed so that the phosphor layer 31 and the electron emission device (field emission device) face each other, and the anode panel AP and the cathode panel CP (more specifically, In this way, the substrate 30 and the support 10 are joined at the periphery through the frame 34. In joining, frit glass is applied to the joint portion of the mold 34 and the anode panel AP and the joint portion of the mold 34 and the cathode panel CP, and the anode panel AP and the cathode panel CP are coated. The frame 34 is bonded together, the frit glass is dried by prefiring, and then main baking is performed at about 450 ° C. for 10 to 30 minutes. Thereafter, the space surrounded by the anode panel AP, the cathode panel CP, the frame body 34, and the frit glass is exhausted through a through hole (not shown) and a chip tube (not shown), and the pressure of the space is removed. At about 10 ^-4 Pa, the chip tube is cut by heat melting. In this way, the space enclosed by the anode panel AP, the cathode panel CP and the frame 34 can be made into a vacuum. After that, wiring with the necessary external circuit is completed to complete the display device.
[299] In addition, an example of the manufacturing method of the anode panel AP in the display device shown in FIG. 1 will be described below with reference to FIGS. First, a luminescent crystal grain composition is prepared. Therefore, for example, the dispersant is purely dispersed and stirred for 1 minute at 3000 rpm using a homomixer. Next, the luminescent crystal grains are poured into pure water in which the dispersant is dispersed. Stirring is performed at 5000 rpm for 5 minutes using a homomixer. Thereafter, for example, polyvinyl alcohol and ammonium dichromate are added, sufficiently stirred and filtered.
[300] In manufacture of the anode panel AP, the photosensitive film 50 is formed (coated) on the entire surface of the substrate 30 made of glass, for example. Then, the photosensitive film 50 formed on the substrate 30 is exposed by ultraviolet rays emitted from an exposure light source (not shown) and passed through the hole portion 54 provided in the mask 53 to expose the photosensitive area 51. ) (See FIG. 4A). Thereafter, the photosensitive film 50 is developed and selectively removed, and the remainder of the photosensitive film (exposure, the photosensitive film after development) 52 is left on the substrate 30 (see FIG. 4B). Next, carbon (carbon slurry) is applied to the entire surface, dried and calcined, and then, on the exposed substrate 30 by removing the remainder 52 of the photosensitive film and the carbon thereon by the lift-off method. The black matrix 32 made of carbon is formed, and the remainder 52 of the photosensitive film is removed (see FIG. 4C). Thereafter, red, green, and blue phosphor layers 31 are formed on the exposed substrate 30 (see Fig. 4D). Specifically, using a luminescent crystal grain composition prepared from each of the fluorescent crystal grains (phosphor particles), for example, a red photosensitive luminescent crystal grain composition (phosphor slurry) is applied to the entire surface, and exposed and developed, Subsequently, a green photosensitive luminescent crystal grain composition (phosphor slurry) is applied to the entire surface, and exposed and developed. Then, a blue photosensitive luminescent crystal grain composition (phosphor slurry) is applied to the entire surface, and then exposed and developed. good. Thereafter, an anode electrode 33 made of an aluminum thin film having a thickness of about 0.07 μm is formed on the phosphor layer 31 and the black matrix 32 by the sputtering method. In addition, the phosphor layers 31 may be formed by screen printing or the like.
[301] In the display device having such a structure, the electron-emitting part of the electron-emitting device is made of a planar carbon-based material layer 23 having a low work function, and the processing requires the complexity required for a conventional spin type field emission device. In addition, no advanced processing technology is required. Moreover, etching of the carbonaceous material layer 23 is unnecessary. Therefore, even when the area of the effective area of the display device is increased and the number of formation of the electron emission parts is remarkably increased, the electron emission efficiency of each electron emission part is equalized over the entire area of the effective area, and the picture quality with extremely low luminance stain is achieved. The display device can be realized.
[302] Electron emission characteristics were measured with a pressure inside the display device at 1 × 10 ⁻⁵ Pa (mainly nitrogen gas) and a H ₂ O partial pressure at 1 × 10 ⁻⁶ Pa. In addition, under the film forming conditions of the carbon-based material layer shown in Table 1, a display device obtained by forming a carbon-based material layer without using CF ₄ was produced, and as a comparative example. As a result, the characteristic deterioration of the electron-emitting portion of the display device in Example 1 was considerably less than in the comparative example.
[303] (Example 2)
[304] Example 2 is an electron-emitting device and manufacturing method according to the second aspect of the present invention (more specifically, the second aspect A), and the field emission device according to the second aspect (more specifically, the second aspect A). , A method of manufacturing a field emission device according to a second aspect (more specifically, a second aspect A and a second aspect (A)), a display device according to the second aspect (more specifically, a second aspect A), and A manufacturing method of a display device according to the second aspect (more specifically, the second aspect A and the second aspect A (1)).
[305] Since the configuration of the display device of the second embodiment can be the same as that of the first embodiment, detailed description thereof will be omitted. 5 shows a schematic partial cross-sectional view of an electron-emitting device or a field emission device. A schematic partial cross-sectional view of a display device of Example 2 and a schematic perspective view of one field emission device or electron emission device are the same as those shown in FIGS. 1 and 2.
[306] The electron-emitting device or the field-emitting device of Example 2 also includes a cathode electrode (conductor layer) 11 having a selective growth region 20 formed on its surface and an electron emitting portion 15 formed on the selective growth region 20. It is. Here, the selective growth region 20 is composed of metal particles 21 attached to the surface of the cathode electrode (conductor layer) 11. The electron-emitting portion is formed of a fluorocarbon thin film (CF _X thin film) 24 formed on the surface of the carbon-based material layer 23 and the carbon-based material layer. The carbonaceous material layer 23 is formed using a hydrocarbon gas (specifically CH ₄ ), and the fluorocarbon thin film 24 uses a fluorine-containing hydrocarbon gas (specifically, CH ₂ F ₂ ). It is formed.
[307] Hereinafter, the manufacturing method of the electron-emitting device, the field emission device and the display device in Example 2 will be described. In Example 2, zinc (Zn) was used as a material constituting the selective growth region 20.
[308] [Process-200]
[309] First, in the same manner as in [Step-100] of Example 1, on the support 10 made of, for example, a glass substrate, the cathode electrode (conductive material) 11 made of aluminum (Al) and the wiring 11A. To form.
[310] [Process-210]
[311] Next, in the same manner as in [Step-110] of Example 1, the selective growth region 20 is formed on the surface of the cathode electrode (conductor layer) 11. However, in Example 2, the solution (using isopropyl alcohol as a solvent) which disperse | distributed zinc (Zn) microparticles | fine-particles in the polysiloxane solution was used.
[312] [Process-220]
[313] Thereafter, a carbonaceous material layer is formed on the cathode electrode (conductive layer) 11 by using a hydrocarbon gas. Specifically, in Example 2, the carbonaceous material layer 23 having a thickness of about 0.2 μm is formed on the selective growth region 20 by using a hydrocarbon gas. The film forming conditions of the carbon-based material layer 23 based on the microwave plasma CVD method are shown in Table 2 below. In the conventional film forming conditions of the carbon-based material layer, a film forming temperature of about 900 ° C. was required, but in Example 2, stable film forming at a film forming temperature of 500 ° C. was achieved. The carbonaceous material layer does not grow on the cathode electrode (conductor layer) 11 and the wiring 11A made of aluminum.
[314] TABLE 2
[315] [Film Formation Conditions of Carbon-Based Material Layer]
[316] Gas Used: CH ₄ / H ₂ = 100 / 10SCCM
[317] Pressure: 1.3 × 10 ³ Pa
[318] Microwave Power: 500W (13.56MHz)
[319] Film formation temperature: 400 ℃
[320] [Process-230]
[321] Thereafter, a fluorocarbon thin film (CF _X thin film) 24 is formed on the surface of the carbonaceous material layer 23 using a fluorine-containing hydrocarbon gas, whereby the carbonaceous material layer 23 and the carbonaceous material are formed. The electron emitting portion 15 made of the fluorocarbon thin film 24 formed on the surface of the material layer 23 is obtained. The film forming conditions of the fluorocarbon based film (CF _X thin film) 24 based on the microwave plasma CVD method are shown in Table 3 below.
[322] TABLE 3
[323] [Film Formation Conditions of Fluorocarbon Thin Film]
[324] Gas Used: CH ₂ F ₂ = 100SCCM
[325] Pressure: 1.3 × 10 ³ Pa
[326] Microwave Power: 500W (13.56MHz)
[327] Film formation temperature: 400 ℃
[328] In the forming conditions of the carbonization fluorine films (CF _X thin film) 24 shown in Table 3, kadyum, fluorocarbon thin film (CF _X thin film) 24 is formed on the surface of the nanotubes, the entire electron-emitting portion 15 It expresses a kind of water repellency.
[329] [Process-240]
[330] Thereafter, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[331] Electron emission characteristics were measured with a pressure inside the display device at 1 × 10 ⁻⁵ Pa (mainly nitrogen gas) and a H ₂ O partial pressure at 1 × 10 ⁻⁶ Pa. In addition, the display device obtained by omitting [Step-230] was fabricated and used as a comparative example. As a result, the characteristic deterioration of the electron-emitting part of the display device in Example 2 was considerably less than in the comparative example.
[332] (Example 3)
[333] Example 3 is the electron emission apparatus concerning 3rd aspect (more specifically, 3A aspect) of this invention, its manufacturing method, and the field emission which concerns on 3rd aspect (more specifically, 3A aspect). A display device according to a method for manufacturing a field emission device according to an element, a third aspect (more specifically, a third aspect and a third aspect (1)), and a third aspect (more specifically, a third aspect) And a method of manufacturing a display device according to the third aspect (more specifically, the third aspect and the third aspect (1)).
[334] The configuration of the electron-emitting device, the field emission device, and the display device of the third embodiment can be the same as that of the first embodiment, and thus detailed description thereof is omitted. Typical sectional drawing of the display device of Example 3, typical perspective view, and typical partial sectional drawing of one field emission element or an electron emission device are the same as that shown to FIG. 1, FIG.
[335] The electron-emitting device or the field-emitting device of Example 3 also has a cathode electrode (conductor layer) 11 having a selective growth region 20 formed on its surface and an electron emitting portion 15 formed on the selective growth region 20. Consists of. Here, the selective growth region 20 is composed of metal particles 21 attached to the surface of the cathode electrode (conductor layer) 11. The carbon-based material layer 23 is formed using a hydrocarbon gas (specifically, CH ₄ ). The surface of the carbonaceous material layer 23 is terminated with a fluorine atom. In other words, the CH bonds present on the surface of the carbonaceous material layer 23 are replaced with CF bonds, thereby exhibiting a kind of water repellency as the entire carbonaceous material layer 23.
[336] Hereinafter, the method of manufacturing the electron-emitting device, the field-emitting device and the display device in Example 3 will be described. In Example 3, aluminum (Al) was used as the cathode electrode (conductor layer) 11, and cobalt nickel alloy was used as the material constituting the selective growth region 20.
[337] [Process-300]
[338] First, the cathode electrode (conductor layer) 11 and the wiring 11A made of aluminum (Al) are formed on the support 10 made of, for example, a glass substrate in substantially the same manner as in [Step-100] of the first embodiment. ).
[339] [Process-310]
[340] Next, in the same manner as in [Step-110] of Example 1, the selective growth region 20 is formed on the surface of the cathode electrode (conductor layer) 11. However, in Example 3, the solution (using isopropyl alcohol as a solvent) which disperse | distributed cobalt nickel alloy (Co-Ni alloy) microparticles | fine-particles in the polysiloxane solution was used.
[341] [Process-320]
[342] Thereafter, a carbonaceous material layer is formed on the cathode electrode (conductor layer) 11 using a hydrocarbon gas. Specifically, in Example 3, the carbonaceous material layer 23 having a thickness of about 0.2 탆 is formed on the selective growth region 20 by using a hydrocarbon gas. The film forming conditions of the carbon-based material layer 23 based on the ICP-CVD method are shown in Table 4 below. In the conventional film forming conditions of the carbon-based material layer, a film forming temperature of about 900 ° C. was required, but in Example 3, stable film forming at a film forming temperature of 400 ° C. was achieved. The carbonaceous material layer does not grow on the cathode electrode (conductor layer) 11 and the wiring 11A made of aluminum.
[343] TABLE 4
[344] [Film Formation Conditions of Carbon-Based Material Layer]
[345] Gas Used: CH ₄ H ₂ = 100 / 10SCCM
[346] Pressure: 1.3 × 10 ³ Pa
[347] ICP power: 500W (13.56MHz)
[348] Film formation temperature: 400 ℃
[349] [Process-330]
[350] Thereafter, the surface of the carbonaceous material layer 23 is terminated (formula) by using a fluorine-containing hydrocarbon gas, whereby the electron emitting portion formed of the carbonaceous material layer 23 terminated (formula) by a fluorine atom. Get 15. Based on the ICP-CVD method, the termination (formula) condition of the surface of the carbon-based material layer 23 is illustrated in Table 5 below.
[351] TABLE 5
[352] [Termination Condition of Carbon-Based Material Layer Surface]
[353] Gas Used: CF ₄ = 100SCCM
[354] Pressure: 1.3 × 10 ³ Pa
[355] ICP power: 500W (13.56MHz)
[356] Film formation temperature: 400 ℃
[357] In terms of the termination (formula) of the surface of the carbon-based material layer shown in Table 5, unlike the formation conditions of the fluorocarbon thin film (CF _X thin film) 24 shown in Table 3, since CF _X gas is used, a fluorine-containing hydrocarbon The ratio of the fluorine component constituting the system gas is high, and the fluorocarbon thin film (CF _X thin film) based on the fluorine-containing hydrocarbon gas is difficult to deposit. When the surface of the carbon nanotube is terminated by a fluorine atom, that is, the CH bond is changed to a CF bond, a kind of water repellency as the entire carbon-based material layer 23 is expressed.
[358] [Process-340]
[359] Thereafter, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[360] Electron emission characteristics were measured with a pressure inside the display device at 1 × 10 ⁻⁵ Pa (mainly nitrogen gas) and a H ₂ O partial pressure at 1 × 10 ⁻⁶ Pa. In addition, the display device obtained by omitting [Step-330] was fabricated and used as a comparative example. As a result, the characteristic deterioration of the electron-emitting portion of the display device in Example 3 was considerably less than in the comparative example.
[361] (Example 4)
[362] Example 4 is a variation of these manufacturing methods for the electron-emitting device, the field-emitting device, and the display device described in the first embodiment. In the manufacturing method described in Example 1, the metal particles 21 were deposited on the cathode electrode portion. On the other hand, in Example 4, the selective growth region forming step is a step of forming a metal thin film made of titanium (Ti) based on the sputtering method. Hereinafter, the manufacturing method of the electron-emitting device, the field emission device and the display device in Example 4 will be described with reference to FIGS. 6A and 6B. 6A and 6B, only one electron emission unit (electron emission device) or components thereof are shown on the cathode electrode (conductor layer) 11 for the sake of brevity.
[363] [Process-400]
[364] First, in the same manner as in [Step-100] of Example 1, a cathode electrode (conductor layer) 11 is formed on a support 10 made of, for example, a glass substrate, and then the resist material layer is spinned. After forming on the entire surface of the coat, a mask layer (consisting of a resist material layer) is formed by exposing the surface of the cathode electrode portion based on the lithography technique.
[365] [Process-410]
[366] Thereafter, on the mask layer including the surface of the exposed cathode electrode (conductive layer) 11, the metal thin film 22 is formed by the sputtering method under the conditions shown in Table 6, and then the mask layer is removed ( 6a). In this way, the selective growth region 20 made of the metal thin film 22 formed on the cathode electrode portion can be obtained.
[367] TABLE 6
[368] [Film Formation Conditions of Metal Thin Film]
[369] Target: Ti
[370] Process gas: Ar = 100SCCM
[371] DC power: 4㎾
[372] Pressure: 0.4Pa
[373] Support heating temperature: 150 ℃
[374] Film thickness: 30nm
[375] [Process-420]
[376] Thereafter, in the same manner as in [Step-120] of Example 1, a carbon-based material layer 23 having a thickness of about 0.2 m is formed on the selective growth region 20 to obtain an electron emitting portion (see Fig. 6B). Subsequently, the display device is assembled in the same manner as in [Step-130] of the first embodiment.
[377] In addition, if [Step-220] to [Step-230] of Example 2 is executed in [Step-420], an electron emission device or display device according to the second aspect of the present invention can be obtained.
[378] Alternatively, by performing [Step-330] to [Step-330] of Example 3, an electron emitting device or display device according to the third aspect of the present invention can be obtained.
[379] (Example 5)
[380] Example 5 is an electron-emitting device according to the first aspect of the present invention, a field emission device according to the fourth aspect of the present invention, a method for manufacturing the same, and a display device according to the fourth aspect of the present invention, and a manufacturing method thereof. It is about. In addition, the display apparatus in Examples 5-20 is what is called a 3-electrode type display apparatus.
[381] A schematic partial cross-sectional view of the display device of Example 5 is shown in FIG. 7, and the basic configuration of the field emission device or the electron emission device device is shown in FIG. 8B. The schematic partial perspective view at the time of disassembling the cathode panel CP and the anode panel AP is substantially the same as that shown in FIG.
[382] The field emission device or the electron emission device according to the fifth embodiment is formed above the cathode electrode (corresponding to the conductor layer) 11 and the cathode electrode 11 formed on the support 10, and has an opening (first opening ( Also provided is an electron emitting portion 15, which forms a gate electrode 13 having 14A, and consists of a carbon-based material layer 23 formed on a portion of the cathode electrode 11 located at the bottom of the first opening 14A. An insulating layer 12 is formed on the support 10 and the cathode electrode 11, and the second opening 14B communicating with the first opening 14A provided on the gate electrode 13 is an insulating layer. In Example 5, the cathode electrode (conductor layer) 11 is made of copper (Cu).
[383] The display device of the fifth embodiment also includes a cathode panel (CP) and a plurality of anode panels (AP) formed of a plurality of electron emission regions provided with the field emission devices as described above in an effective area in a two-dimensional matrix form. Has a pixel. The cathode panel CP and the anode panel AP are joined via the frame 34 at their peripheral edges. In addition, a through hole 36 for vacuum exhaust is provided in an ineffective region of the cathode panel CP, and a chip tube 37 which is cut after vacuum exhaust is connected to the through hole 36. The frame 34 is made of ceramics or glass, and the height is, for example, 1.0 mm. In some cases, only the adhesive layer may be used instead of the frame 34.
[384] Since the structure of the anode panel AP can be the same as that of the anode panel AP described in the first embodiment, detailed description thereof will be omitted.
[385] One pixel is formed in the effective area of the anode panel AP so as to face the stripe cathode electrode 11, the electron emission portion 15 formed thereon, the stripe gate electrode 13, and the field emission element. It is comprised by the fluorescent substance layer 31 arrange | positioned. In the effective area, such pixels are arranged in hundreds of thousands to millions of orders, for example.
[386] A relative negative voltage is applied to the cathode electrode control circuit 40 to the cathode electrode 11, a relative constant voltage is applied to the gate electrode control circuit 41 to the gate electrode 13, and a gate electrode (eg) to the anode electrode 33. A constant voltage higher than that of 13 is applied to the anode electrode control circuit 42. In the case of displaying in such a display device, for example, a scan signal is input from the cathode electrode control circuit 40 to the cathode electrode 11, and a video signal from the gate electrode control circuit 41 to the gate electrode 13. Enter. Conversely, the video signal may be input from the cathode electrode control circuit 40 to the cathode electrode 11, and the scan signal may be input from the gate electrode control circuit 41 into the gate electrode 13. Due to the electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13, electrons are emitted from the electron emission section 15 on the basis of the quantum tunnel effect. ) And impinges on the phosphor layer 31. As a result, the phosphor layer 31 is excited to emit light, and a desired image can be obtained.
[387] Hereinafter, the manufacturing method of the electron-emitting device, the field emission device and the display device in Example 5 will be described with reference to FIGS. 8A and 8B. 8A and 8B, only one electron emitting portion or components thereof are shown in the overlapping region of the gate electrode 11 and the gate electrode 13 for the sake of simplicity.
[388] [Process-500]
[389] First, a conductive material layer for forming a cathode electrode is formed on a support 10 made of, for example, a glass substrate, and then a patterned cathode is formed by patterning the conductive material layer based on known lithography techniques and RIE methods. An electrode (conductor layer) 11 is formed on the support 10. The stripe cathode electrode (conductor layer) 11 extends in the left and right directions of the drawing. The conductive material layer is made of, for example, a copper (Cu) layer having a thickness of about 0.2 μm formed by the sputtering method.
[390] [Process-510]
[391] Next, an insulating layer 12 is formed on the support 10 and the cathode electrode 11. Specifically, for example, the insulating layer 12 having a thickness of about 1 μm is formed on the entire surface by a CVD method using TEOS (tetraethoxysilane) as the source gas. An example of film forming conditions of the insulating layer 12 is shown in Table 7 below.
[392] TABLE 7
[393] [Film forming conditions of insulating layer]
[394] TEOS flow rate: 800SCCM
[395] O2 flow rate: 600SCCM
[396] Pressure: 1.1kPa
[397] RF power: 0.7 ㎾ (13.56 ㎒)
[398] Film formation temperature: 400 ℃
[399] [Process-520]
[400] Thereafter, the gate electrode 13 having the first opening 14A is formed on the insulating layer 12. Specifically, after forming a conductive material layer made of aluminum (Al) for forming a gate electrode on the insulating layer 12 by a sputtering method, a first mask material layer patterned on the conductive material layer (not shown) Not used), the first mask material layer is used as an etching mask, the conductive material layer is etched, the conductive material layer is patterned into a stripe shape, and then the first mask material layer is removed. Next, a patterned second mask material layer (not shown) is formed on the conductive material layer and the insulating layer 12, and the conductive material layer is etched using this second mask material layer as an etching mask. By this, the gate electrode 13 having the first opening 14A on the insulating layer 12 can be obtained. The stripe gate electrode 13 extends in a direction different from that of the gate electrode 11 (for example, the paper vertical direction in the drawing). Subsequently, a second opening 14B in communication with the first opening 14A formed in the gate electrode 13 is formed in the insulating layer 12. Specifically, after using the second mask material layer as an etching mask and etching the insulating layer 12 by the RIE method, the second mask material layer is removed. In this way, the structure shown in FIG. 8A can be obtained. The etching conditions of the insulating layer 12 are illustrated in Table 8 below. In the fifth embodiment, the first opening 14A and the second opening 14B have a one-to-one correspondence. That is, one second opening 14B is formed corresponding to one first opening 14A. In addition, the planar shape of the 1st and 2nd opening 14A, 14B is circular, for example with a diameter of 1 micrometer-30 micrometers. What is necessary is just to form about 1-3000 pieces of these opening parts 14A and 14B in one pixel, for example.
[401] TABLE 8
[402] [Etching Conditions of Insulation Layer]
[403] Etching Equipment: Parallel Plate Type RIE Equipment
[404] C4F8 flow rate: 30SCCM
[405] CO flow rate: 70SCCM
[406] Ar flow rate: 300SCCM
[407] Partial Pressure: 7.3Pa
[408] RF power: 1.3 ㎾ (13.56 ㎒)
[409] Etching Temperature: Room Temperature
[410] [Process-530]
[411] Thereafter, the electron emitting portion 15 formed of the carbon-based material layer 23 on the portion of the cathode electrode 11 formed of copper (Cu), which is located at the bottom of the openings 14A and 14B and has a function as a kind of catalyst. ). Specifically, in the same manner as in [Step-120] of Example 1, on the cathode electrode 11 portion, a carbon-based material layer 23 having a thickness of about 0.2 μm is formed, and the electron emitting portion 15 is formed. Get This state is shown in FIG. 8B. The deposition conditions of the carbonaceous material layer 23 may be the same as those shown in Table 1 based on the microwave plasma CVD method. In addition, since the gate electrode 13 is made of aluminum (Al), no carbon-based material layer is formed on the gate electrode 13.
[412] [Process-540]
[413] Thereafter, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[414] In Example 5, the electron-emitting part 15 which consists of the carbonaceous material layer 23 is formed on the cathode electrode 11 part which is located in the bottom part of opening part 14A, 14B, and consists of a material which functions as a kind of catalyst. Since it forms, it is not necessary to pattern the carbonaceous material layer for making the carbonaceous material layer 23 into a desired shape.
[415] In addition, even if a cathode or a conductor layer is formed of silver (Ag) or gold (Au) instead of copper (Cu), these metals have a function as a kind of catalyst, and a carbon-based material layer on the cathode electrode (11) The electron emission unit 15 formed of 23 can be formed.
[416] (Example 6)
[417] Example 6 is a modification of Example 5. In the manufacturing method of the electron-emitting device, the manufacturing method of the field emission device, and the manufacturing method of the display device described in the fifth embodiment, the surface of the cathode electrode 11 is naturally oxidized to form the carbon-based material layer 23. It may become difficult. In Example 6, the metal oxide (so-called natural oxide) on the surface of the cathode electrode is removed. In addition, the metal oxide on the surface of the cathode electrode portion is removed by plasma reduction treatment or cleaning treatment.
[418] The structures of the electron-emitting device, the field emission device and the display device manufactured by the sixth embodiment or the seventh embodiment described later are the same as those of the electron-emitting device, the field emission device and the display device described in the fifth embodiment. Description is omitted. Hereinafter, the manufacturing method of the electron-emitting device of Example 6, the manufacturing method of the field emission device, and the manufacturing method of the display device will be described.
[419] [Process-600]
[420] First, in the same manner as in [Step-500] to [Step-520] of Example 5, a cathode electrode 11 is formed on a support 10 made of, for example, a glass substrate, and then the support 10 is formed. And forming an insulating layer 12 on the cathode electrode 11, and then forming a gate electrode 13 having the first opening 14A on the insulating layer 12, and again, the gate electrode 13 The second opening 14B is formed in communication with the first opening 14A.
[421] [Process-610]
[422] Next, the metal oxide (natural oxide film) on the surface of the portion of the cathode electrode 11 exposed at the bottom of the openings 14A and 14B is removed based on the plasma reduction treatment (microwave plasma treatment) illustrated in Table 9 below. do. Alternatively, a metal oxide (natural oxide film) on the surface of the exposed cathode electrode portion can be removed using, for example, a 1:49 (volume ratio) mixed solution of a 50% aqueous hydrofluoric acid solution and pure water.
[423] TABLE 9
[424] Gas Used: H ₂ = 100SCCM
[425] Pressure: 1.3 × 10 ³ Pa
[426] Microwave Power: 600W (13.56MHz)
[427] Treatment temperature: 400 ℃
[428] [Process-620]
[429] Thereafter, on the portion of the cathode electrode 11 exposed at the bottom of the openings 14A and 14B, the carbonaceous material layer 23 having a thickness of about 0.2 μm was formed in the same manner as in [Step-120] of Example 1. To form the electron-emitting unit 15. The deposition conditions of the carbonaceous material layer 23 may be the same as those shown in Table 1 based on the microwave plasma CVD method.
[430] [Process-630]
[431] Thereafter, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[432] In Example 6, after removing the metal oxide (natural oxide film) on the surface of the portion of the cathode electrode 11 exposed to the bottoms of the openings 14A and 14B, a carbon-based material layer is formed on the portion of the cathode electrode portion. Therefore, the carbon-based material layer having more excellent characteristics can be formed.
[433] (Example 7)
[434] Example 7 is also a modification of 5th aspect. In the seventh embodiment, irregularities are formed on the portion of the cathode electrode 11 exposed at the bottom of the openings 14A and 14B. As a result, protrusions are formed in the carbon-based material layer formed thereon, whereby a field emission device having high electron emission efficiency can be obtained. Hereinafter, the method of manufacturing the field emission device and the display device in Example 7 will be described.
[435] [Process-700]
[436] First, in the same manner as in [Step-500] to [Step-520] of Example 5, a cathode electrode 11 is formed on a support 10 made of, for example, a glass substrate, and then the support 10 is formed. And forming an insulating film 12 on the cathode electrode 11, and then forming a gate electrode 13 having a first opening 14A on the insulating film 12, and then forming the gate electrode 13 again. A second opening 14B is formed in the insulating layer 12 that communicates with the first opening 14A.
[437] [Process-710]
[438] Thereafter, the surface of the portion of the cathode electrode 11 located at the bottom of the openings 14a and 14b is etched to form irregularities. The conditions of such etching are illustrated in Table 10 below.
[439] TABLE 10
[440] Etching solution: 1% aqueous hydrochloric acid
[441] Treatment time: 5 minutes
[442] [Process-720]
[443] Thereafter, electrons formed of the carbon-based material layer 23 on the portion of the cathode electrode 11 located at the bottom of the openings 14A and 14B are subjected to the same steps as those in [Step-530] of the fifth embodiment. The discharge part 15 is formed. Specifically, on the portion of the cathode electrode 11, in the same manner as in [Step-120] of Example 1, a carbon-based material layer 23 having a thickness of 0.2 µm is formed, and the electron emitting portion 15 is formed. Get The deposition conditions of the carbonaceous material layer 23 may be the same as those shown in Table 1 based on the microwave plasma CVD method.
[444] [Process-730]
[445] Thereafter, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[446] The process of forming irregularities on the surface of the portion of the cathode electrode 11 exposed at the bottom of the openings 14A and 14B described in the seventh embodiment can be applied to the sixth embodiment. In addition, the removal of the metal oxide (natural oxide film) described in Example 6 can be applied to Example 7.
[447] Further, in the step of forming the carbon-based material layer or the electron-emitting part in Examples 5 to 7 described above, if [Step-220] to [Step-230] of Example 2 is carried out, The electron-emitting device according to the second aspect can be obtained, or the field-emitting device according to the fifth aspect of the present invention and the display device according to the fifth aspect of the present invention can be obtained. The method of manufacturing the field emission device according to the fifth aspect of the present invention and the method of manufacturing the display device according to the fifth aspect of the present invention are performed.
[448] In the step of forming the carbon-based material layer or the electron-emitting part in Examples 5 to 7 described above, if [Step-320] to [Step-330] of Example 3 is executed, The electron-emitting device according to the third aspect can be obtained, or the field emission device according to the sixth aspect of the present invention and the display device according to the sixth aspect of the present invention can be obtained. A method of manufacturing the field emission device according to the sixth aspect of the invention and a method of manufacturing the display device according to the sixth aspect of the present invention are performed.
[449] (Example 8)
[450] Example 8 is an electron emitting device according to the first aspect of the present invention in which a selective growth region is formed, a field emission device according to the fourth aspect of the present invention in which a selective growth region is formed, and a third aspect of the present invention in which a selective growth region is formed. A method of manufacturing a field emission device according to the fourth aspect (2) of the present invention, including a display device according to the fourth aspect and a step of forming a selective growth region, and a step of forming a selective growth region. The manufacturing method of the display apparatus which concerns on 4th (2) aspect is related.
[451] A typical partial cross-sectional view of the field emission device or the electron-emitting device of Example 8 is shown in FIG. 12B, and a typical partial cross-sectional view of the display device is shown in FIG. This field emission device or electron emission device is formed in the method of the cathode electrode 11 (corresponding to the conductive layer) and the cathode electrode 11 formed on the support 10, and has a gate having a first opening 14A. It consists of an electrode 13. The electron-emitting portion is formed of the selective growth region 20 formed on the portion of the cathode electrode 11 positioned at the bottom of the openings 14A and 14B and the carbon-based material layer 23 formed on the selective growth region 20. Also equipped. In Example 8, the selective growth region 20 is composed of metal particles 21 made of nickel (Ni) adhered to the surface of the cathode electrode 11.
[452] In the field emission device of Example 8, the second layer is formed on the support 10 and the cathode electrode 11 and communicates with the first opening 14A provided in the gate electrode 13. The opening 14B is provided in the insulating layer 12, and the selective growth region 12 and the carbonaceous material layer 23 are located at the bottom of the second opening 14B.
[453] 9 shows an example of the configuration of the display device according to the eighth embodiment. The display device is composed of a cathode panel (CP) and an anode panel (AP) in which a large number of electron emission regions are formed in an effective region in a two-dimensional matrix form, and is composed of a plurality of pixels, each pixel comprising a field emission device and And the anode electrode 33 and the phosphor layer 31 provided on the substrate 30 so as to face the field emission device. The cathode panel CP and the anode panel AP are at their periphery and are joined via the frame 34. In some cross-sectional views shown in FIG. 9, the carbon-based material layer 23 serving as the openings 14A and 14B and the electron-emitting portion in one cathode electrode 11 on the cathode panel CP is shown for simplicity of the drawing. Although shown two by one, it is not limited to these, Moreover, the basic structure of the field emission element is as showing to FIG. 12B. Further, a through hole 36 for vacuum exhaust is provided in an invalid region of the cathode panel CP, and a chip tube 37 cut after vacuum exhaust is connected to the through hole 36. 9 shows the completion state of the display device, and the chip tube 37 shown is already cut out.
[454] Since the structure of the anode panel AP can be the same as that of the anode panel AP described in the first embodiment, detailed description thereof will be omitted.
[455] Since the operation of the display device in the case of displaying in this display device can be the same as that of the display device described in the fifth embodiment, detailed description thereof will be omitted.
[456] Hereinafter, the method of manufacturing the electron-emitting device, the method of manufacturing the field emission device, and the method of manufacturing the display device of the eighth embodiment will be described with reference to FIGS. 10A to 10C, 11A and 11B, 12A, and 12B. In addition, in these figures, only one electron emission part or its component is shown in the overlapping area | region of the cathode electrode 11 and the gate electrode 13 for simplicity of drawing.
[457] [Process-800]
[458] First, a conductive material layer for forming a cathode electrode is formed on a support 10 made of, for example, a glass substrate, and then a patterned cathode is formed by patterning the conductive material layer based on known lithography techniques and RIE methods. An electrode 11 (corresponding to the conductive layer) is formed on the support 10 (see FIG. 10A). The stripe cathode electrode 11 extends in the left and right directions of the drawing. The conductive material layer is made of, for example, an aluminum (Al) layer having a thickness of about 0.2 μm formed by the sputtering method.
[459] [Process-810]
[460] Next, an insulating layer 12 is formed on the support 10 and the cathode electrode 11. Specifically, for example, the insulating layer 12 having a thickness of about 1 μm is formed on the entire surface by a CVD method using TEOS (tetraethoxysilane) as the source gas. The film forming conditions of the insulating layer 12 may be as shown in Table 7.
[461] [Process-820]
[462] Thereafter, the gate electrode 13 having the first opening 14A is formed on the insulating layer 12. Specifically, after forming a conductive material layer made of aluminum (Al) for forming a gate electrode on the insulating layer 12 by a sputtering method, a first mask material layer patterned on the conductive material layer (not shown) Not used), the first mask material layer is used as an etching mask, the conductive material layer is etched, and the conductive material layer is patterned into stripes, and then the first mask material layer is removed. Next, a patterned second mask material layer (not shown) is formed on the conductive material layer and the insulating layer 12, and the conductive material layer is etched using this second mask material layer as an etching mask. . As a result, the gate electrode 13 having the first opening 14A on the insulating layer 12 can be obtained. The stripe gate electrode 13 extends in a direction different from that of the gate electrode 11 (for example, the paper vertical direction in the drawing).
[463] [Process-830]
[464] Subsequently, a second opening 14B communicating with the first opening 14A formed in the gate electrode 13 is formed in the insulating layer 12. Specifically, after using the second mask material layer as an etching mask and etching the insulating layer 12 by the RIE method, the second mask material layer is removed. In this way, the structure shown in FIG. 10B can be obtained. The etching conditions of the insulating layer 12 may be the same as those exemplified in Table 8 below. In the eighth embodiment, the first opening 14A and the second opening 14B have a one-to-one correspondence. That is, one second opening 14B is formed corresponding to one first opening 14A. In addition, the planar shape of the 1st and 2nd opening 14A, 14B is circular, for example with a diameter of 1 micrometer-30 micrometers. What is necessary is just to form about 1-3000 opening parts 14A, 14B in one pixel, for example.
[465] [Process-840]
[466] Thereafter, the selective growth region 20 is formed on the portion of the cathode electrode 11 located at the bottom of the second openings 14A and 14B. Therefore, first, the center portion of the bottom of the second opening 14b is formed. A mask layer 116 is formed in which the surface of the cathode electrode 11 is exposed (see Fig. 10C). Specifically, the resist material layer is formed on the entire surface including the inside of the openings 14A and 14B by spin coating, and then, based on the lithography technique, the resist material layer is located at the center of the bottom of the second opening 14B. By forming the holes, the mask layer 116 can be obtained. In the eighth embodiment, the mask layer 116 includes a portion of the cathode electrode 11 located at the bottom of the second opening 14B, a side wall of the second opening 14B, a side wall of the first opening 14A, The gate electrode 13 and the insulating layer 12 are covered. This forms a selective growth region on the portion of the cathode electrode 11 located at the center of the bottom of the second opening 14B in the next step, but the cathode electrode 11 and the gate electrode 13 are made of metal. Short-circuit by the particles can be reliably prevented.
[467] Next, metal particles are deposited on the mask layer 116 including the exposed surface of the cathode electrode 11. Specifically, a solution obtained by dispersing nickel (Ni) fine particles in a polysiloxane solution (using isopropyl alcohol as a solvent) is applied to the entire surface by spin coating, and a layer composed of a solvent and metal particles is formed on the cathode electrode portion. . Thereafter, the selective growth region 20 can be obtained by removing the mask layer 16 and leaving the metal particles 21 on the exposed surface of the cathode electrode 11 (see FIG. 11A). The polysiloxane also has a function of fixing the metal particles 21 on the exposed surface of the cathode electrode 11 (so-called adhesion function).
[468] [Process-850]
[469] Thereafter, in the same manner as in [Step-120] of Example 1, a carbon-based material layer 23 having a thickness of about 0.2 μm is formed on the selective growth region 20 to obtain the electron emitting portion 15. . This state is shown in FIGS. 11B and 12A, but FIG. 11B is a schematic partial cross-sectional view of the field emission device viewed from the extending direction of the gate electrode 13, and FIG. 12A is an electric field from the extending direction of the cathode electrode 11. A schematic partial cross-sectional view of the emitting device. The film forming conditions of the carbonaceous material layer 23 based on the microwave plasma CVD method may be the same as those shown in Table 1.
[470] [Process-860]
[471] Thereafter, it is preferable to retreat the side wall surface of the second opening 14b provided in the insulating layer 12 by isotropic etching to expose the open end of the gate electrode 13. . In this way, the field emission device shown in FIG. 12B can be completed. Alternatively, the selective growth region 20 is formed of a conductor layer (surface corresponding to the cathode electrode 11 in the eighth embodiment) formed on the surface and a carbon-based material layer 23 formed on the selective growth region 20. An electron emitting device composed of an electron emitting portion can be obtained. In addition, isotropic etching can be performed by dry etching which uses radical as a main etching species like wet dry etching, or wet etching using etching liquid. As the etching solution, for example, a 1: 100 (volume ratio) mixed solution of 49% hydrofluoric acid aqueous solution and pure water can be used.
[472] [Process-870]
[473] Thereafter, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[474] In the display device having such a structure, the electron-emitting part of the field emission device is made of a flat carbon-based material layer 23 having a low work function exposed to the bottom of the second opening 14B. The complexity required for the spin type field emission device and no advanced processing technique are required. Moreover, etching of the carbonaceous material layer 23 is unnecessary. Therefore, the area of the effective area of the display device is increased, and with this, the electron emission efficiency of the electron emission unit can be made uniform, and a high quality display device with extremely low luminance spot can be realized.
[475] Further, in the step [850] or the step of forming the carbon-based material layer in Examples 9 to 16, which will be described later, [Steps-220] to [Step-230] of Example 2 Is carried out, the electron-emitting device according to the second aspect of the invention in which the selective growth region is formed, the field emission device in accordance with the fifth aspect in which the selective growth region is formed, A display device is obtained, and the manufacturing method of the field emission device and the manufacturing method of the display device according to the fifth aspect / fifth aspect (2) of the present invention are carried out.
[476] Alternatively, if [Steps-320] to [Step-330] of Example 3 are executed, the electron-emitting device according to the third aspect of the present invention in which the selective growth region is formed, and the sixth aspect of the present invention in which the selective growth region is formed. A display device according to the sixth aspect of the present invention in which a field emission device and a selective growth region according to the aspect are formed is obtained, and the field emission device according to the sixth aspect A / 6A (2) of the present invention is manufactured. The method and the manufacturing method of the display device are performed.
[477] (Example 9)
[478] Example 9 is a modification of the manufacturing method demonstrated in Example 8. In the manufacturing method described in Example 8, if the carbon-based material layer 23 is not formed immediately after attaching the metal particles 21 on the cathode electrode portion, the surface of the metal particles 21 is naturally oxidized, Formation of the carbon-based material layer 23 may be difficult. In Example 9, after attaching the metal particles 21 to the portion of the cathode electrode 11 on which the selective growth region 20 should be formed, the metal oxide (so-called natural oxide film) on the surface of the metal particles 21 is attached. Remove it. In addition, the metal oxide on the surface of the metal particles is removed by a plasma reduction treatment or a washing treatment.
[479] The structures of the electron-emitting device, the field emission device and the display device manufactured according to the ninth embodiment or the tenth to sixteenth embodiments described later are similar to those of the electron-emitting device, the field emission device and the display device described in the eighth embodiment. Since the same, detailed description is omitted. Hereinafter, the manufacturing method of the electron-emitting device of Example 9, the manufacturing method of the field emission device, and the manufacturing method of the display device will be described.
[480] [Process-900]
[481] First, in the same manner as in [Step-800] to [Step-830] of Example 8, the cathode electrode 11 is formed on the support 10 made of, for example, a glass substrate, and then the support 10 is formed. And forming an insulating layer 12 on the cathode electrode 11, and then forming a gate electrode 13 having the first opening 14A on the insulating layer 12, and again, the gate electrode 13 The second opening 14B is formed in the insulating layer 12 in communication with the first opening 14A.
[482] [Process-910]
[483] Thereafter, in the same manner as in [Step-840] of Example 8, a mask layer 116 is formed in which the surface of the cathode electrode 11 is exposed at the center of the bottom of the second opening 14B. Next, metal particles are deposited on the mask layer 1116 including the exposed surface of the cathode electrode 11. Specifically, a solution obtained by dispersing molybdenum (Mo) fine particles in a polysiloxane solution (using isopropyl alcohol as a solvent) is applied to the entire surface by spin coating to form a layer composed of a solvent and metal particles on the cathode electrode portion. . Thereafter, the mask layer 116 is removed, the solvent is sufficiently removed by heating to about 400 ° C, and the selective growth region 20 is obtained by leaving the metal particles 21 on the exposed surface of the cathode electrode 11. Can be.
[484] [Process-920]
[485] Next, the metal oxide (natural oxide film) on the surface of the metal particles 21 is removed based on the same plasma reduction treatment (microwave plasma treatment) as shown in Table 9. Alternatively, the metal oxide (natural oxide film) on the surface of the metal particles 21 can be removed using, for example, a 1:49 (volume ratio) mixed solution of a 50% hydrofluoric acid aqueous solution and pure water.
[486] [Process-930]
[487] Thereafter, in the same manner as in [Step-850] of Example 8, a carbonaceous material layer 23 having a thickness of about 0.2 μm is formed on the selective growth region 20 to obtain an electron emitting portion 15. . The deposition conditions of the carbonaceous material layer 23 may be the same as those shown in Table 1 based on the microwave plasma CVD method.
[488] [Process-940]
[489] Thereafter, the same field emission device as that shown in FIG. 12B can be completed in the same manner as in [Step-860] of Example 8. FIG. Alternatively, the selective growth region 20 is formed of a conductor layer (surface corresponding to the cathode electrode 11 in the ninth embodiment) formed on the surface and the carbon-based material layer 23 formed on the selective growth region 20. An electron emitting device composed of an electron emitting portion can be obtained. In addition, as in [Step-130] of Example 1, the display device is assembled.
[490] (Example 10)
[491] Example 10 is also a modification of the manufacturing method described in Example 8. In the manufacturing method described in Example 8, the metal particles 21 were deposited on the cathode electrode portion.
[492] On the other hand, in Example 10, in the step of attaching the metal particles on the cathode electrode portion, the metal compound particles containing the metal atoms constituting the metal particles are deposited on the cathode electrode portion, and then the metal compound particles are heated. And decomposing and thereby obtaining a selective growth region formed by metal particles (copper particles) adhering to the surface of the cathode electrode. Specifically, after forming a layer composed of a solvent and a metal compound particle (copper iodide in Example 10) on the cathode electrode portion, the solvent is removed, leaving the metal compound particle, and then the metal compound particle (iodization). Copper particles) are decomposed by heating, thereby obtaining a selective growth region formed by the adhesion of metal particles (copper particles) to the surface of the cathode electrode. Hereinafter, the manufacturing method of the electron-emitting device, the manufacturing method of the field emission device, and the manufacturing method of the display device of the tenth embodiment will be described.
[493] [Process-1000]
[494] first,
[495] In the same manner as in [Step-800] to [Step-830] of Example 8, the cathode electrode 11 is formed on the support 10 made of, for example, a glass substrate, and then the support 10 and the cathode are formed. The insulating layer 12 is formed on the electrode 11, and then, the gate electrode 13 having the first opening 14A is formed on the insulating layer 12, and then the gate electrode 13 is formed again. A second opening 14B is formed in the insulating layer 12 that communicates with the formed first opening 14A.
[496] [Step-1010]
[497] Thereafter, similarly to [Step-840] of the eighth embodiment, a mask layer 116 is formed in which the surface of the cathode electrode 11 is exposed at the center of the bottom of the second opening 14B. Next, metal particles are deposited on the exposed cathode electrode 11. Specifically, similarly to Example 8, a solution obtained by dispersing copper iodide fine particles in a polysiloxane solution is applied to the entire surface by spin coating, and the cathode electrode portion is formed of a layer composed of a solvent and metal compound particles (copper iodide particles). Form on the phase. Subsequently, the mask layer 116 is removed and the solvent is sufficiently removed by heat treatment at 400 ° C., and copper iodide is thermally decomposed and metal particles (copper particles) are exposed on the exposed surface of the cathode electrode 11. The selective growth region 20 can be obtained by depositing () 21.
[498] [Step-1020]
[499] Thereafter, in the same manner as in [Step-850] of Example 8, a carbonaceous material layer 23 having a thickness of about 0.2 μm is formed on the selective growth method region 20 to obtain an electron emitting portion. Thereafter, the same field emission device as shown in FIG. 12B can be completed in the same manner as in [Step-860] of Example 8. FIG. Alternatively, electrons composed of a conductor layer having a selective growth region 20 formed on its surface (the cathode electrode 11 is equivalent in Example 10) and a carbonaceous material layer 23 formed on the selective growth region 20. An electron emitting device composed of an emitting portion can be obtained. In addition, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[500] In addition, similarly to [Step-920] of Example 9, the metal oxide (natural oxide film) on the surface of the metal particles 21 may be removed.
[501] (Example 11)
[502] Example 11 is also a modification of the manufacturing method demonstrated in Example 8. In the manufacturing method described in Example 8, the metal particles 21 are deposited on the cathode electrode portion. On the other hand, in Example 11, in the selective growth region forming step, after forming the mask layer on which the surface of the cathode electrode is exposed in the center of the bottom of the second opening, on the mask layer including the exposed surface of the cathode electrode, A metal thin film made of titanium (Ti) is formed by a sputtering method. The manufacturing method of the electron-emitting device, the manufacturing method of the field emission device, and the manufacturing method of the display device of the eleventh embodiment are described below.
[503] [Step-1100]
[504] First, in the same manner as in [Step-800] to [Step-830] of Example 8, the cathode electrode 11 is formed on the support 10 made of, for example, a glass substrate, and then the support 10 is formed. And forming an insulating layer 12 on the cathode electrode 11, and then forming a gate electrode 13 having a first opening 14A on the insulating layer 12, and then forming a gate electrode 13 The second opening 14B is formed in the insulating layer 12 in communication with the first opening 14A.
[505] [Step-1110]
[506] Thereafter, similarly to [Step-840] of the eighth embodiment, a mask layer 116 is formed in which the surface of the cathode electrode 11 is exposed at the center of the bottom of the second opening 14B. Next, on the mask layer 116 including the exposed surface of the cathode electrode 11, the metal layer 22 is formed by the sputtering method under the same conditions as those shown in Table 6, and then the mask layer 116. ) Is removed (see FIG. 13A). In this way, the selective growth region 20 which is a part of the cathode electrode 11 having the metal thin film 22 formed on the surface can be obtained.
[507] [Step-1120]
[508] Thereafter, in the same manner as in [Step-850] of Example 8, a carbon-based material layer 23 having a thickness of about 0.2 μm is formed on the selective growth region 20 to obtain an electron emitting portion (see FIG. 13B). ). Subsequently, in the same manner as in [Step-860] in Example 8, the field emission device can be completed. Alternatively, the selective growth region 20 is formed of a conductor layer (the cathode electrode 11 corresponds to the equivalent in the eleventh embodiment) formed on the surface and the carbon-based material layer 23 formed on the selective growth region 20. An electron emitting device composed of an electron emitting portion can be obtained. In addition, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[509] In addition, similarly to [Step-920] of Example 9, the metal oxide (natural oxide film) on the surface of the metal thin film 22 may be removed. In the same manner as in Example 10, the metal compound thin film was sputtered to form the second opening 14B on the surface of the cathode electrode 11 located at the bottom, and then the metal compound thin film was thermally decomposed. The selective growth region 20 in which the metal thin film is formed on (11) may be obtained. In addition, you may form a metal thin film by MOCVD method.
[510] (Example 12)
[511] Example 12 is also a modification of the manufacturing method demonstrated in Example 8. In Example 12, the selective growth region was composed of an organometallic compound thin film, and more specifically, composed of a complex compound composed of acetylacetic nut nickel. Further, in Example 12, the step of forming the organometallic compound thin film on the cathode electrode portion is a step of forming an organometallic compound solution on the cathode electrode. Hereinafter, the manufacturing method of the electron-emitting device of Example 12, the manufacturing method of the field emission device, and the manufacturing method of the display device will be described.
[512] [Process-1200]
[513] First, in the same manner as in [Step-800] to [Step-830] of Example 8, the cathode electrode 11 is formed on the support 10 made of, for example, a glass substrate, and then the support 10 is formed. And forming an insulating layer 12 on the cathode electrode 11, and then forming a gate electrode 13 having a first opening 14A on the insulating layer 12, and then forming a gate electrode 13 The second opening 14B is formed in the insulating layer 12 in communication with the first opening 14A.
[514] [Step-1210]
[515] Thereafter, similarly to [Step-840] of the eighth embodiment, a mask layer 116 is formed in which the surface of the cathode electrode 11 is exposed at the center of the bottom of the second opening 14B. Next, a layer of an organometallic compound solution containing acetylacetic nut nickel is formed on the mask layer 116 including the exposed surface of the cathode electrode 11 by spin coating. Subsequently, after drying the organometallic compound solution, the mask layer 116 is removed to form an organic metal compound thin film of acetylacetic nut nickel formed on the portion of the cathode electrode 11 exposed at the bottom of the openings 14A and 14B. The selective growth region 20 can be obtained.
[516] [Step-1220]
[517] Thereafter, in the same manner as in [Step-850] of Example 8, a carbonaceous material layer 23 having a thickness of about 0.2 μm is formed on the selective growth region 20 to obtain an electron emitting portion. Subsequently, in the same manner as in [Step-860] in Example 8, the field emission device can be completed. Alternatively, the conductive growth layer 20 includes a conductive layer (the cathode electrode 11 is equivalent to that of the twelfth embodiment) formed on the surface and a carbon-based material layer 23 formed on the selective growth region 20. An electron emitting device composed of an electron emitting portion can be obtained. In addition, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[518] In Example 12, after forming the organometallic compound thin film, the metal oxide (natural oxide film) on the surface of the organometallic compound thin film may be removed in the same manner as in [Step-920] of Example 9.
[519] (Example 13)
[520] Example 13 is also a modification of the manufacturing method described in Example 8, and is further a modification of Example 12. Also in Example 13, the selective growth region is composed of an organometallic compound thin film, and more specifically, is composed of a complex compound composed of acetylacetic nut nickel. In Example 13, the step of forming the organometallic compound thin film on the cathode electrode part consists of a step of depositing the organometallic compound on the cathode electrode after subliming the organometallic compound. Hereinafter, the manufacturing method of the electron-emitting device of Example 13, the manufacturing method of the field emission device, and the manufacturing method of the display device will be described.
[521] [Step-1300]
[522] First, in the same manner as in [Step-800] to [Step-830] of Example 8, the cathode electrode 11 is formed on the support 10 made of, for example, a glass substrate, and then the support 10 is formed. And forming an insulating layer 12 on the cathode electrode 11 on the cathode electrode 11, and then forming a gate electrode 13 having the first opening 14A on the insulating layer 12. Further, a second opening 14B in communication with the first opening 14A formed in the gate electrode 13 is formed in the insulating layer 12.
[523] [Step-1310]
[524] Thereafter, similarly to [Step-840] of the eighth embodiment, a mask layer 116 is formed in which the surface of the cathode electrode 11 is exposed at the center of the bottom of the second opening 14B. Next, on the mask layer 116 including the exposed surface of the cathode electrode 11, an organic metal compound thin film made of acetylacetic nut nickel is formed. Specifically, the film-forming apparatus provided with the reaction chamber and the sublimation chamber connected to the reaction chamber by the piping which can be heated is prepared. After the support is loaded into the reaction chamber, the atmosphere of the reaction chamber is made an inert gas atmosphere. Subsequently, the acetylacetic nut nickel is sublimated in the sublimation chamber, and the sublimed acetylacetic nut nickel is sent to the reaction chamber together with the carrier gas. In the reaction chamber, an organic metal compound thin film containing acetylacetate nickel is deposited on the mask layer 1116 including the exposed surface of the cathode electrode 11. In addition, what is necessary is just to make the temperature of the support body 10 into room temperature. Thereafter, by removing the mask layer 116, the selective growth region 20 composed of an organic metal compound thin film made of acetylacetic nut nickel formed on the portion of the cathode electrode 11 exposed at the bottom of the openings 14A and 14B. ) Can be obtained.
[525] [Step-1320]
[526] Thereafter, in the same manner as in [Step-850] of Example 8, a carbonaceous material layer 23 having a thickness of about 0.2 μm is formed on the selective growth region 20 to obtain an electron emitting portion. Subsequently, in the same manner as in [Step-860] in Example 8, the field emission device can be completed. Alternatively, electrons composed of a conductor layer having a selective growth region 20 formed on its surface (the cathode electrode 11 is equivalent in Example 13) and a carbonaceous material layer 23 formed on the selective growth region 20. An electron emitting device composed of an emitting portion can be obtained. In addition, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[527] Also in Example 13, after forming the organometallic compound thin film, the metal oxide (natural oxide film) on the surface of the organometallic compound thin film may be removed in the same manner as in [Step-920] of Example 9.
[528] (Example 14)
[529] Example 14 is also a modification of the manufacturing method demonstrated in Example 8. In Example 14, a selective growth region made of a metal thin film was formed on the surface of the cathode by plating. The manufacturing method of the electron-emitting device of the field emission device of Example 14 and the manufacturing method of the display device are described below.
[530] [Process-1400]
[531] First, in the same manner as in [Step-800] to [Step-830] of Example 8, the cathode electrode 11 is formed on the support 10 made of, for example, a glass substrate, and then the support 10 is formed. And forming an insulating layer 12 on the cathode electrode 11, and then forming a gate electrode 13 having a first opening 14A on the insulating layer 12, and then forming a gate electrode 13 The second opening 14B is formed in the insulating layer 12 in communication with the first opening 14A.
[532] [Process-1410]
[533] Thereafter, similarly to [Step-840] of the eighth embodiment, a mask layer 116 is formed in which the surface of the cathode electrode 11 is exposed at the center of the bottom of the second opening 14B. Subsequently, a selective growth region 20 made of a metal thin film is formed on the exposed surface of the cathode electrode 11 by plating. Specifically, based on the zinc plating method in which a support is immersed in a zinc plating solution bath, the cathode electrode 11 is connected to the cathode side, and a metal nickel is connected to the anode side as a counter cathode. The selective growth region 20 made of the constructed metal thin film is formed on the exposed surface of the cathode electrode 11. In addition, it is preferable to connect the gate electrode 13 to the anode side from the viewpoint of not reliably depositing a zinc layer on the gate electrode. Thereafter, the mask layer 116 is removed using an organic solvent such as acetone to form a metal thin film made of zinc (Zn) formed on the portion of the cathode electrode 11 exposed at the bottom of the openings 14A and 14B. The selective growth region 20 can be obtained. In addition, when the tin plating solution is used instead of the zinc plating solution, the selective growth region 20 made of a metal thin film composed of tin (Sn) can be obtained.
[534] [Step-1420]
[535] Thereafter, in the same manner as in [Step-850] of Example 8, a carbonaceous material layer 23 having a thickness of about 0.2 μm is formed on the selective growth region 20 to obtain an electron emitting portion. The deposition conditions of the carbonaceous material layer 23 may be the same as those shown in Table 1 based on the microwave plasma CVD method.
[536] [Step-1430]
[537] Next, in the same manner as in [Step-860] in Example 8, the field emission device can be completed. Alternatively, the conductive growth layer 20 includes a conductive layer (the cathode electrode 11 is equivalent to that of the fourteenth embodiment) formed on the surface and a carbon-based material layer 23 formed on the selective growth region 20. An electron emitting device composed of an electron emitting portion can be obtained. In addition, in the same manner as in the [Step-130] of the embodiment, the display device is assembled.
[538] In addition, also in Example 14, after forming a metal thin film, you may remove the metal oxide (natural oxide film) on the metal thin film surface similarly to [Step-920] of Example 9.
[539] (Example 15)
[540] Example 15 is a modification of Example 14. In the fifteenth embodiment, irregularities are formed on the surface of the selective growth region formed on the portion of the cathode electrode 11 exposed at the bottom of the openings 14A and 14B. As a result, protrusions are formed in the carbon-based material layer formed thereon, whereby a field emission device having high electron emission efficiency can be obtained. Hereinafter, a method of manufacturing the electron-emitting device, the field-emitting device and the display device in Example 15 will be described.
[541] [Process 1500]
[542] First, in the same manner as in [Step-1400] to [Step-1410] of Example 14, a cathode electrode 11 is formed on a support 10 made of, for example, a glass substrate, and then the support 10 is formed. And forming an insulating layer 12 on the cathode electrode 11, and then forming a gate electrode 13 having a first opening 14A on the insulating layer 12, and then forming a gate electrode 13 The second opening 14B is formed in the insulating layer 12 in communication with the first opening 14A. Thereafter, similarly to [Step-840] of the eighth embodiment, a mask layer 116 is formed in which the surface of the cathode electrode 11 is exposed at the center of the bottom of the second opening 14B. Next, a selective growth region 20 made of a metal thin film made of zinc (Zn) is formed on the exposed surface of the cathode electrode 11 by plating.
[543] [Step-1510]
[544] Next, the support 10 is immersed in 5% aqueous sodium hydroxide solution, the surface of the selective growth region 20 made of a metal thin film composed of zinc (Zn) is etched, and concavities and convexities are formed on the surface of the selective growth region 20. Form.
[545] [Process-1520]
[546] Thereafter, in the same manner as in [Step-850] of Example 8, a carbonaceous material layer 23 having a thickness of about 0.2 μm is formed on the selective growth region 20 to obtain an electron emitting portion. The deposition conditions of the carbonaceous material layer 23 may be the same as those shown in Table 1 based on the microwave plasma CVD method.
[547] [Process-1530]
[548] Subsequently, in the same manner as in [Step-860] in Example 8, the field emission device can be completed. Alternatively, electrons composed of a conductor layer having a selective growth region 20 formed on its surface (the cathode electrode 11 is equivalent in Example 15) and a carbonaceous material layer 23 formed on the selective growth region 20. An electron emitting device composed of an emitting portion can be obtained. In addition, as in [Step-130] of Example 1, the display device is assembled.
[549] Dilute hydrochloric acid, dilute sulfuric acid, dilute nitric acid, etc. can be used for formation (etching) of the unevenness | corrugation in the surface of the selective growth area | region 20 not only aqueous sodium hydroxide solution but also the material which comprises the selective growth area | region 20.
[550] In addition, also in Example 15, after forming a metal thin film, you may remove the metal oxide (natural oxide film) on the metal thin film surface similarly to [Step-920] of Example 9.
[551] (Example 16)
[552] Example 16 is also a modification of the manufacturing method described in Example 8. In Example 16, a selective growth region made of a metal thin film is formed on the surface of the cathode by thermal decomposition of the organometallic compound. Hereinafter, the manufacturing method of the electron-emitting device of Example 16, the manufacturing method of the field emission device, and the manufacturing method of the display device will be described.
[553] [Process-1600]
[554] First, in the same manner as in [Step-800] to [Step-830] of Example 8, the cathode electrode 11 is formed on the support 10 made of, for example, a glass substrate, and then the support 10 is formed. And the insulating layer 12 is formed on the cathode electrode 11, and then, the gate electrode 13 having the first opening 14A is formed on the insulating layer 12, and the gate electrode 13 is formed. The second opening 14B is formed in the insulating layer 12 in communication with the first opening 14A.
[555] [Step-1610]
[556] Thereafter, similarly to [Step-840] of the eighth embodiment, a mask layer 116 is formed in which the surface of the cathode electrode 11 is exposed at the center of the bottom of the second opening 14B. Next, on the mask layer 116 including the exposed surface of the cathode electrode 11, a selective growth region 20 made of a metal thin film is formed by pyrolyzing acetylacetic nut nickel. Specifically, a film forming apparatus having a reaction chamber and a fire chamber connected to the reaction chamber by a pipe that can be heated is prepared. After the support is loaded into the reaction chamber, the atmosphere of the reaction chamber is made into an inert gas atmosphere. Subsequently, the acetylacetic nut nickel is sublimated in the sublimation chamber, and the sublimed acetylacetic nut nickel is sent to the reaction chamber together with the carrier gas. In addition, the support is heated to an appropriate temperature. Moreover, it is desirable to make heating temperature of a support body into 50 degreeC-300 degreeC, Preferably it is 100 degreeC-200 degreeC. In the reaction chamber, a nickel (Ni) layer obtained by pyrolysis of acetylacetic nut nickel is formed on the mask layer 116 including the exposed surface of the cathode electrode 11. Thereafter, by removing the mask layer 116, the selective growth region 20 made of a metal thin film of nickel (Ni) formed on the portion of the cathode electrode 11 exposed at the bottom of the openings 14A and 14B. You can get it.
[557] For example, a spin coating method is applied to the entire surface of the cathode electrode 11 and the mask layer 116 where the surface of the organometallic compound solution containing zinc (Zn) is exposed at the center of the bottom of the second opening 14b. By applying a heat treatment in a reducing gas atmosphere to thermally decompose an organometallic compound containing zinc and to deposit a zinc (Zn) layer on the mask layer 116 including the exposed surface of the cathode electrode 11. By forming a film, the selective growth region 20 composed of a metal thin film made of zinc (Zn) can be obtained.
[558] [Step-1620]
[559] Thereafter, in the same manner as in [Step-850] of Example 8, a carbonaceous material layer 23 having a thickness of about 0.2 μm is formed on the selective growth region 20 to obtain an electron emitting portion. The film forming conditions of the carbonaceous material layer 23 based on the microwave plasma CVD method may be the same as those shown in Table 1. Subsequently, in the same manner as in [Step-860] in Example 8, the field emission device can be completed. Alternatively, electrons composed of a conductor layer having a selective growth region 20 formed on its surface (the cathode electrode 11 is equivalent in Example 16) and a carbonaceous material layer 23 formed on the selective growth region 20. An electron emitting device composed of an emitting portion can be obtained. In addition, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[560] In addition, also in Example 16, after forming a metal thin film, you may remove the metal oxide (natural oxide) on the surface of a metal thin film similarly to [Step-920] of Example 9.
[561] (Example 17)
[562] In Example 17, the electron-emitting device according to the first aspect of the present invention in which the selective growth region was formed, the field emission device according to the fourth aspect of the present invention in which the selective growth region was formed, and the present invention in which the selective growth region was formed. A method of manufacturing a field emission device according to the fourth aspect (1) of the present invention, including a display device related to four aspects and a step of forming a selective growth region, and a step of forming a selective growth region. The manufacturing method of the display apparatus which concerns on 4th (1) aspect is related.
[563] 15 is a schematic partial sectional view of the field emission device or electron emission device of Example 17. FIG. This field emission device is also formed on the cathode electrode 11 formed on the support 10 and the gate electrode 13 formed on the upper side of the cathode electrode 11 with the first opening 14A. And an electron-emitting portion comprising a selective growth region 20 formed on the portion of the cathode electrode located at the bottom of the openings 14A and 14B and a carbonaceous material layer 23 formed on the selective growth region 20. have. In Example 17, the selective growth region 20 is composed of metal particles 21 made of nickel (Ni) adhered to the surface of the cathode electrode 11. In addition, unlike the field emission devices described in Examples 8 to 16, the selective growth region 20 extends into the insulating layer 12. However, depending on the formation state of the selective growth region 20, the selective growth region 20 is located at the bottom of the openings 14A and 14B, similarly to the field emission devices described in the eighth to sixteenth embodiments. It may be formed only on the portion of the cathode electrode 11.
[564] Also in the field emission device of the seventeenth embodiment, an insulating layer 12 is formed on the support 10 and the cathode electrode 11, and the second opening portion communicating with the first opening 14A provided in the gate electrode 13 is connected. 14B is provided in the insulating layer 12, and the carbon-based material layer 23 is located at the bottom of the second opening 14B.
[565] Since the display device of the seventeenth embodiment is substantially the same display device as shown in Fig. 9, detailed description thereof will be omitted.
[566] Hereinafter, the manufacturing method of the electron-emitting device, the manufacturing method of the field emission device, and the manufacturing method of the display device of the seventeenth embodiment will be described with reference to FIGS. 14A, 14B and 15.
[567] [Step-1700]
[568] First, in the same manner as in [Step-110] of Example 1, a conductive material layer for forming a cathode electrode is formed on a support 10 made of, for example, a glass substrate, and then a known lithography technique and an RIE method. By patterning the conductive material layer based on this, a stripe cathode electrode 11 is formed on the support 10. The stripe cathode electrode 11 extends in the left and right directions of the drawing in the drawing. The conductive material layer is made of, for example, an aluminum (Al) layer having a thickness of about 0.2 μm formed by the sputtering method.
[569] [Step-1710]
[570] Thereafter, in the same manner as in [Step-110] of Example 1, the selective growth region 20 is formed on the surface of the cathode electrode 11 (see Fig. 14A).
[571] [Step-1720]
[572] Next, an insulating layer 12 is formed on the support 10, the cathode electrode 11, and the selective growth region 20. Specifically, the insulating layer 12 is formed on the entire surface in the same manner as in the [Step-810] of the eighth embodiment. Thereafter, the gate electrode 13 having the first opening 14A is formed on the insulating layer 12 in the same manner as in [Step-820] of the eighth embodiment. Subsequently, in the same manner as in [Step-830] of Example 8, a second opening 14B communicating with the first opening 14A provided in the gate electrode 13 is formed in the insulating layer 12, and the second The selective growth region 20 is exposed at the bottom of the opening 14B. Also in the seventeenth embodiment, the first opening 14A and the second opening 14B have a one-to-one correspondence. That is, one second opening 14B is formed corresponding to one first opening 14A. In addition, the planar shape of the 1st and 2nd opening 14A, 14B is circular, for example with a diameter of 1 micrometer-30 micrometers. What is necessary is just to form these opening part 14A, 14B in 1 pixel about 1-3000 pieces, for example. In this way, the structure shown in FIG. 14B can be obtained.
[573] [Step-1730]
[574] Thereafter, in the same manner as in [Step-120] of Example 1, on the selective growth region 20 exposed at the bottom of the second opening 14B, a carbon-based material layer 23 having a thickness of about 0.2 m is formed. It forms, and an electron emission part is obtained. This state is shown in FIG. The film forming conditions of the carbonaceous material layer 23 based on the microwave plasma CVD method may be the same as those shown in Table 1.
[575] [Step-1740]
[576] Thereafter, in the same manner as in [Step-860] in Example 8, it is the gate electrode 13 to retreat the sidewall surface of the second opening 14B provided in the insulating layer 12 by isotropic etching. It is preferable from the viewpoint of exposing the open end of Subsequently, as in Example 1 [Step-130], a display device is assembled.
[577] Further, when [Steps 1730] to [Step-220] to [Step-230] of Example 2 are executed, the electron emission device and selective growth region according to the second aspect of the present invention in which the selective growth region is formed. The display device according to the fifth aspect of the present invention in which the field emission device according to the fifth aspect of the present invention and the selective growth region are formed is obtained, and in the aspect of the fifth aspect (A) of the fifth aspect of the present invention The manufacturing method of the related field emission element and the manufacturing method of the display apparatus are performed.
[578] Alternatively, if [Step-730] to [Step-330] of Example 3 is executed in [Step-1730], the electron-emitting device and selective growth according to the third aspect of the present invention in which the selective growth region is formed. A field emission device according to the sixth aspect of the present invention in which a region is formed, and a display device according to the sixth aspect of the present invention in which a selective growth region is formed are obtained, and a sixth aspect of the sixth aspect of the present invention (6) The manufacturing method of the field emission device and the manufacturing method of the display apparatus which are related to this are performed.
[579] (Example 18)
[580] Example 18 includes the electron-emitting device according to the first aspect of the present invention in which the selective growth region was formed, the field emission device according to the fourth aspect of the present invention in which the selective growth region was formed, and the present invention in which the selective growth region was formed. A method of manufacturing a field emission device according to the seventh aspect (1) of the present invention, including a display device according to the fourth aspect and a step of forming a selective growth region, and a step of forming a selective growth region. The manufacturing method of the display apparatus which concerns on 7th (1) aspect is related.
[581] 16 is a schematic partial sectional view of the field emission device or electron emission device of Example 18. FIG. Since the field emission device also has substantially the same structure as the field emission device described in Example 17, detailed description thereof will be omitted. In addition, since the display device of the eighteenth embodiment is substantially the same display device as that shown in Fig. 9, detailed description thereof will be omitted. Unlike the field emission devices described in Examples 8 to 16, the selective growth region 20 and the carbon-based material layer 23 formed thereon extend to the inside of the insulating layer 12. However, according to the formation state of the selective growth region 20, the selective growth region 20 and the carbon-based material layer 23 formed thereon are the same as those of the field emission device described in the eighth to sixteenth embodiments. It may be formed only on the portion of the cathode electrode 11 located at the bottom of the openings 14A and 14B.
[582] Hereinafter, the manufacturing method of the electron-emitting device, the manufacturing method of the field emission device, and the manufacturing method of the display device of the eighteenth embodiment will be described with reference to FIGS.
[583] [Process-1800]
[584] First, in the same manner as in [Step-110] of Example 1, a conductive material layer for forming a cathode electrode is formed on a support 10 made of, for example, a glass substrate, followed by a known lithography technique and RIE method. The conductive material layer is patterned accordingly to form a striped cathode electrode 11 on the support 10. (See a in FIG. 3) The striped cathode electrode 11 is in the left and right directions in the drawing. Extends. The conductive material layer is made of, for example, an aluminum (Al) layer having a thickness of about 0.2 μm formed by the patterning method.
[585] [Step-1810]
[586] Thereafter, in the same manner as in [Step-110] of Example 1, the selective growth region 20 is formed on the surface of the cathode electrode 11.
[587] [Process-1820]
[588] Thereafter, in the same manner as in [Step-120] of Example 1, a carbon-based material layer 23 having a thickness of about 0.2 μm is formed on the selective growth region 20 to obtain an electron emitting portion. This state is shown in d of FIG. The film forming conditions of the carbonaceous material layer 23 based on the microwave plasma CVD method may be the same as those shown in Table 1.
[589] [Step-1830]
[590] Next, the gate electrode 13 having the first opening 14A is provided above the carbonaceous material layer 23. Specifically, in the same manner as in [Step-810] of Example 8, an insulating layer 12 is formed on the entire surface, and in the same manner as in [Step-820] of Example 8, on the insulating layer 12 A gate electrode 13 having a first opening 14A is formed. Thereafter, in the same manner as in [Step-830] of Example 8, a second opening 14B communicating with the first opening 14A provided in the gate electrode is formed in the insulating layer 12, and the second opening ( The carbonaceous material layer 23 is exposed at the bottom of 14B). Also in the eighteenth embodiment, the first opening 14A and the second opening 14B have a one-to-one correspondence. That is, one second opening 14B is formed corresponding to one first opening 14A. In addition, the planar shape of 1st opening part and 2nd opening part 14A, 14B is a circular shape of diameter 1 micrometer-30 micrometers, for example. What is necessary is just to form these opening part 14A, 14B in 1 pixel about 1-3000 pieces, for example. As a result, the field emission device shown in FIG. 16 can be obtained.
[591] [Process-1840]
[592] Thereafter, in the same manner as in [Step-860] of Example 8, it is the same as that of the gate electrode 13 to retreat the sidewall surface of the second opening 14B provided in the insulating layer 12 by isotropic etching. It is preferable from a viewpoint of exposing the open end. Next, in the same manner as in [Step-130] of Example 1, the display device is assembled.
[593] Further, if [Step-220] to [Step-230] of Example 2 is executed in [Step-1820], or [Step-220] of Example 2 is carried out for [Step-1820] , [Step-230] of Example 2 after [Step-1830], the electron-emitting device according to the second aspect of the present invention in which the selective growth region is formed, and the fifth A aspect of the present invention in which the selective growth region is formed. The display device according to the fifth aspect of the present invention, in which the field emission device according to the present invention and the selective growth region are formed, is obtained, and the method for manufacturing the field emission device according to the eighth aspect of the present invention And a method of manufacturing the display device.
[594] Alternatively, if [Step-320] to [Step-330] of Example 3 is executed in [Step-1820], or [Step-320] of Example 3 is carried out for [Step-1820]. If [Step-330] of Example 3 is executed after [Step-1830], the electron emitting device according to the third aspect of the present invention in which the selective growth region is formed, and the sixth aspect of the present invention in which the selective growth region is formed. A display device according to the sixth aspect of the present invention in which a field emission device and a selective growth region according to the aspect are formed is obtained, and the field emission device according to the ninth aspect of the ninth aspect of the present invention is manufactured. The method and the manufacturing method of the display device are performed.
[595] In Example 17 or Example 18, after the openings 14A and 14B were formed, the same as in [Step-920] of Example 9, the metal particles and the metal in the exposed selective growth region 20 were exposed. The metal oxide (natural oxide) on the surface of the thin film may be removed. In the same manner as in Example 10, after the metal compound particles were deposited or after the metal oxide thin film was formed, the metal oxide particles or the metal compound thin film were thermally decomposed to adhere the metal particles to the surface of the cathode electrode. Alternatively, the selective growth region 20 formed by forming a metal thin film may be obtained.
[596] In Example 17 or Example 18, furthermore, in the same manner as in Example 11, after forming a selective growth region forming mask layer on the center of the bottom of the second opening, the surface of the cathode electrode was exposed; You may comprise the process of forming a metal thin film on the mask layer containing the exposed cathode electrode based on the sputtering method. Alternatively, in the same manner as in Example 12 or 13, the organic metal compound solution may be formed on the cathode electrode, and after the organic metal compound is sublimated, the organic metal compound is deposited on the cathode electrode. You may comprise in a process. In addition, as in Example 14 and Example 15, a selective growth region made of a metal thin film may be formed on the surface of the cathode electrode by a plating method, and in the same manner as in Example 16, the metal thin film is thermally decomposed by an organometallic compound. The selective growth region may be formed on the surface of the cathode electrode.
[597] (Example 19)
[598] Example 19 relates to the electron-emitting device according to the second aspect of the present invention, the method for manufacturing the electron-emitting device according to the second aspect of the present invention, the field emission device according to the fifth aspect, and the fifth aspect. A method of manufacturing a field emission device, a display device according to Embodiment 5B of the present invention, and a method of manufacturing a display device according to Embodiment 5B of the present invention.
[599] The display device of the nineteenth embodiment has the same structure as the display device of the fifth embodiment shown in FIG. 7 by a schematic partial cross-sectional view, and thus detailed description thereof is omitted.
[600] Although the basic configuration of the field emission device or electron emission device of Example 19 is shown in FIG. 18B, this field emission device or electron emission device is a cathode electrode (corresponding to the conductive layer) formed on the support 10. ( 11) and the cathode electrode 11 formed on the upper side of the cathode electrode 11 and having a gate electrode 13 having an opening (first opening 14A) and positioned at the bottom of the first opening 14A. Also provided is an electron emitting portion 15 which consists of a carbon-based material layer 23 formed on the portion of. In addition, an insulating layer 12 is formed on the support 10 and the cathode electrode 11, and the second opening 14B communicating with the first opening 14A provided on the gate electrode 13 is an insulating layer ( 12) is installed. In Example 19, the electron emission part 15 is a carbon nanotube structure (specifically, carbon nanotubes 26) filled in the matrix 25 in a state where the matrix 25 and the distal end portion protrude. ) And the matrix 25 is formed of water glass. In addition, a fluorocarbon thin film 24 is formed on the surface of the carbon-based material layer 23, and the fluorocarbon thin film 24 is formed using a fluorine-containing hydrocarbon gas.
[601] The method of manufacturing the electron-emitting device, the method of manufacturing the field emission device, and the method of manufacturing the display device of Example 19 are described below with reference to FIGS. 17A, 17B, and 18A, 18B.
[602] [Step-1900]
[603] First, a striped cathode electrode 11 made of a chromium (Cr) layer having a thickness of about 0.2 μm formed by, for example, a sputtering method and an etching technique is formed on a support 10 made of, for example, a glass substrate. do.
[604] [Step-1910]
[605] After dispersing the carbon nanotube structure in the inorganic binder material made of water glass to a desired area of the cathode electrode 11 by screen printing, the solvent is removed and the binder material is removed. The firing is carried out to obtain the electron emitting portion 15 (see a in FIG. 17). The firing conditions can be, for example, 40 ° C for 30 minutes in the drying atmosphere. Carbon nanotubes are manufactured by an arc discharge method and have an average diameter of 30 nm and an average length of 1 μm.
[606] [Process-1920]
[607] Next, an insulating layer 12 is formed on the support 10, the cathode electrode 11, and the electron emission unit 15. Specifically, the insulating layer 12 having a thickness of about 1 μm is formed on the entire surface by, for example, the CVD method using TEOS (tetraethoxysilane) as the raw material gas. The film forming conditions of the insulating layer 12 may be the same as in Table 7.
[608] [Process-1930]
[609] After that, the stripe-type gate electrode 13 is formed on the insulating layer 12, and the mask layer 27 is formed on the insulating layer 12 and the gate electrode 13, and then the gate electrode ( A first opening 14A is formed in 13, and a second opening 14B is formed in the insulating layer 12 which communicates with the first opening 14A formed in the gate electrode 13 (Fig. 17). (B)). In addition, when the matrix 25 is made of water glass, the matrix 25 is not etched when the insulating layer 12 is etched. That is, the etching selectivity between the insulating layer 12 and the matrix 25 is almost infinite. Therefore, damage to the carbon nanotubes 26 does not occur by etching the insulating layer 12.
[610] [Process-1940]
[611] Subsequently, it is preferable to remove a part of the matrix 25 made of water glass using an aqueous sodium hydroxide (NaOH) solution to obtain a carbon nanotube 26 in which the tip portion protrudes from the matrix 25. In this way, the electron-emitting part 15 of the structure shown to a of FIG. 18 can be obtained.
[612] The etching of the matrix 25 changes the surface state of some or all of the carbon nanotubes 26 (for example, oxygen atoms, oxygen molecules, etc. adsorb on the surface), and become inactive with respect to field emission. There may be. Therefore, after that, it is preferable to perform plasma treatment in the hydrogen gas atmosphere on the electron-emitting unit 15, whereby the electron-emitting unit 15 is activated, and the electrons from the electron-emitting unit 15 are discharged. The emission efficiency can be further improved. Plasma treatment conditions are shown in Table 11 below.
[613] TABLE 11
[614] Gas Used: H ₂ = 100sccm
[615] Power Power: 1000W
[616] Support Power: 50V
[617] Reaction pressure: 0.1Pa
[618] Support temperature: 300 ℃
[619] [Step-1950]
[620] Subsequently, in the same manner as in [Step-230] of Example 2, a fluorocarbon thin film (CF) using a fluorine-containing hydrocarbon gas on the surface of the carbon-based material layer 23 made of carbon nanotubes 26 is used. _X thin film) 24, thereby obtaining an electron-emitting part 15 composed of the carbon-based material layer 23 and the fluorocarbon thin film 24 formed on the surface of the carbon-based material layer 23. See b of FIG. 18)
[621] [Process-1960]
[622] Subsequently, in the same manner as in [Step-860] in Example 8, it is possible to retreat the sidewall surface of the second opening 14B provided in the insulating layer 12 by isotropic etching to open the gate electrode 13. It is preferable from a viewpoint of exposing a distal end. Next, the mask layer 27 is removed.
[623] [Step-1970]
[624] Thereafter, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[625] In addition, if [Step-950] of Example 3 is executed in [Step-1950], the electron-emitting device according to Embodiment 3B of the present invention, its manufacturing method, and the electric field according to Embodiment 6b of the present invention. A light emitting device and a display device according to the sixth aspect of the present invention are obtained, and the manufacturing method of the field emission device and the display device manufacturing method according to the sixth aspect of the present invention are carried out.
[626] Alternatively, when [Step-1900], [Step-1910], [Step-1940], [Step-1950], and [Step-1970] are executed, the electron-emitting device according to Embodiment 2B of the present invention and its A manufacturing method, a field emission device according to the second aspect of the present invention, a manufacturing method thereof, a display device according to the second aspect of the present invention, and a manufacturing method thereof are obtained.
[627] Alternatively, if [Step-1900], [Step-1910], [Step-1940], [Step-330], and [Step-1970] are executed, the electron-emitting device according to Embodiment 3B of the present invention, and its A manufacturing method, a field emission device according to the third aspect of the present invention, a manufacturing method thereof, a display device according to the third aspect of the present invention, and a manufacturing method thereof are obtained.
[628] Alternatively, if [Step-1800], [Step-1910], [Step-1830], [Step-1940], [Step-1950], or [Step-1840] are executed, the present invention relates to the fifth embodiment of the present invention. An electron emitting device and a display device are obtained, and the method of manufacturing the field emission device according to the eighth aspect of the present invention and the method of manufacturing the display device according to the eighth aspect of the present invention are carried out.
[629] Alternatively, if [Step-1800], [Step-1910], [Step-1830], [Step-1940], [Step-330], or [Step-1840] are executed, the present invention relates to the sixth aspect of the present invention. An electron emitting device and a display device are obtained, and the method of manufacturing the field emission device according to the ninth aspect of the present invention and the method of manufacturing the display device according to the ninth aspect of the present invention are performed.
[630] (Example 20)
[631] Example 20 relates to an electron-emitting device according to Embodiment 2B of the present invention, a method for manufacturing an electron-emitting device according to Embodiment 2C of the present invention, a field emission device according to Embodiment 5B, and a fifth embodiment. A method of manufacturing a field emission device, a display device according to Embodiment 5B of the present invention, and a method of manufacturing a display device according to Embodiment 5C of the present invention.
[632] The electron-emitting device, the field-emitting device, and the display device of the twentieth embodiment, the electron-emitting device, the field-emitting device of Example 19, and a partial partial cross-sectional view of FIG. Since it has the same structure as the display apparatus of 5 already, detailed description is abbreviate | omitted. In Example 20, the electron-emitting part 15 includes a carbon nanotube structure (specifically, a carbon nanotube) filled in the matrix 25 with the matrix 25 and the tip end protruding. 26), and the matrix 25 is made of a conductive metal oxide (specifically, indium tin oxide, ITO). In addition, a fluorocarbon thin film 24 is formed on the surface of the carbon-based material layer 23, and the fluorocarbon thin film 24 is formed using a fluorine-containing hydrocarbon gas.
[633] Hereinafter, the method of manufacturing the field emission device will be described again with reference to a, b of FIG. 17 and a, b of FIG. 18.
[634] [Process-2000]
[635] First, a striped cathode electrode 11 made of a chromium (Cr) layer having a thickness of about 0.2 μm formed by, for example, a sputtering method and an etching technique is formed on a support 10 made of, for example, a glass substrate. do.
[636] [Process-2010]
[637] Next, a metal compound solution composed of an organic acid metal compound in which the carbon nanotube structure is dispersed is applied onto the cathode electrode 11 by, for example, a spray method. Specifically, the metal compound solution illustrated in Table 12 below is used. In the metal compound solution, the organotin compound and organoindium compound are in a state dissolved in an acid (for example, hydrochloric acid, nitric acid, or sulfuric acid). Carbon nanotubes are manufactured by the arc discharge method and have an average diameter of 30 nm and an average length of 1 μm. In application | coating, the support body is heated at 70-150 degreeC. The application atmosphere is the air atmosphere. After application | coating, a support body is heated for 5 to 30 minutes, and butyl acetate is fully evaporated. In this way, when the coating is heated, the drying of the coating solution starts before the carbon nanotubes self-leveling in the direction near the horizontal to the surface of the cathode by heating the support, so that the carbon nanotubes do not become horizontal. In this state, carbon nanotubes can be disposed on the surface of the cathode electrode. In other words, the carbon nanotubes can be oriented in a direction close to the normal direction of the support, in other words, in a state in which the tip portion of the carbon nanotubes faces the direction of the anode electrode. In addition, the metal compound solution of the composition shown in Table 12 may be prepared previously, the metal compound solution which does not add carbon nanotube may be prepared, and the carbon nanotube and a metal compound solution may be mixed before application | coating. good. In addition, in order to improve the dispersibility of carbon nanotubes, ultrasonic waves may be irradiated when preparing a metal compound solution.
[638] TABLE 12
[639] Organotin compound and organoindium compound: 0.1-10 parts by weight
[640] Dispersant (sodium dodecyl sulfate): 0.1 to 5 parts by weight
[641] Carbon Nanotubes: 0.1-20 parts by weight
[642] Butyl Acetate: Residual
[643] In addition, when an organic tin compound dissolved in an acid is used as the organic acid metal compound solution, tin oxide is obtained as a matrix, and when an organic indium compound is dissolved in an acid, indium oxide is obtained as a matrix to form an organic zinc compound. When a solution dissolved in an acid is used, zinc oxide is obtained as a matrix. When an organoantimony compound is used, an antimony tin-tin is obtained as a matrix, and an organoantimony compound and an organotin compound dissolved in an acid are used. , Antimony oxide-tin is obtained as a matrix. As the organometallic compound solution, the use of an organotin compound yields tin oxide as a matrix, the use of an organic indium compound yields indium oxide as a matrix, and the use of an organic zinc compound results in zinc oxide as a matrix. When an organoantimony compound is used, an antimony oxide is obtained as a matrix, and when an organoantimony compound and an organotin compound are used, an antimony oxide-tin is obtained as a matrix. Alternatively, a solution of a metal chloride (for example, tin chloride or indium chloride) may be used.
[644] In some cases, irregularities are remarkably formed on the surface of the metal compound layer after drying the metal compound solution. In such a case, it is desired to apply the metal compound solution again on the metal compound layer without heating the support.
[645] [Process-2020]
[646] Thereafter, by firing the metal compound of the organic acid metal compound, a matrix containing metal atoms (specifically, In and Sn) derived from the organic acid metal compound (specifically, it is a metal oxide, and more specifically ITO) (25) to obtain an electron emitting portion (15) in which carbon nanotubes (26) are fixed to the surface of the cathode electrode (11). Firing is performed in an air atmosphere at 350 ° C. for 20 minutes. In this way, the volume resistivity of the obtained matrix 25 was 5x10 <^{-7> (} ohm) * m. By using the organic acid metal compound as a starting material, a matrix 25 made of ITO can be formed even at a low temperature of 350 ° C. Instead of the organic acid metal compound solution, an organometallic compound solution may be used, and when a solution of a metal chloride (for example, tin chloride or indium chloride) is used, tin oxide and indium chloride are oxidized by firing. The matrix 25 which consists of ITO is formed.
[647] [Process-2030]
[648] Subsequently, a resist layer is formed on the entire surface, and a circular resist layer having a diameter of 10 µm, for example, is left over the desired region of the cathode electrode 11. And the matrix 25 is etched for 1 to 30 minutes using hydrochloric acid of 10-60 degreeC, and the unnecessary part of an electron emission part is removed. If carbon nanotubes still exist in addition to the desired region, the carbon nanotubes are etched by an oxygen plasma etching process under the conditions illustrated in Table 13 below. In addition, although the bias power may be 0 W, that is, it may also be a direct current, it is desired to apply a bias power. Moreover, you may heat a support body about 80 degreeC, for example.
[649] TABLE 13
[650] Device used: RIE device
[651] Introductory gas: gas containing oxygen
[652] Plasma Excitation Power: 500W
[653] Bias Power: 0 to 150 W
[654] Processing time: 10 seconds or more
[655] Alternatively, the carbon nanotubes may be etched by the wet etching treatment under the conditions illustrated in Table 14.
[656] TABLE 14
[657] Solution Used: KMnO ₄
[658] Temperature: 20 ~ 120 ℃
[659] Treatment time: 10 seconds to 20 minutes
[660] Thereafter, the structure shown in a of FIG. 17 can be obtained by removing the resist layer. Moreover, it is not limited to leaving the circular electron emission part of 10 micrometers in diameter. For example, the electron emission portion may be left on the cathode electrode 11.
[661] In addition, you may carry out in order of [Step-2010], [Step-2030], and [Step-2020].
[662] [Process-2040]
[663] Next, an insulating layer 12 is formed on the support 10, the cathode electrode 11, and the electron emitting portion 15. Specifically, the insulating layer 12 having a thickness of about 1 μm is formed on the entire surface by, for example, the CVD method using TEOS (tetraethoxysilane) as the raw material gas. The film forming conditions of the insulating layer 12 may be as shown in Table 7.
[664] [Process-2050]
[665] After that, a stripe-type gate electrode 13 is formed on the insulating layer 12, and a mask layer 27 is formed on the insulating layer 12 and the gate electrode 13, and then the gate electrode ( 13, a first opening 14A is formed, and a second opening 14B communicating with the first opening 14A formed in the gate electrode 13 is formed in the insulating layer 12 (FIG. B) reference). In addition, when the matrix 25 is composed of a metal oxide, for example, ITO, when the insulating layer 12 is etched, the matrix 25 is not etched. That is, the etching selectivity between the insulating layer 12 and the matrix 25 is almost infinite. Therefore, damage to the carbon nanotubes 26 does not occur by etching the insulating layer 12.
[666] [Process-2060]
[667] Subsequently, under the conditions illustrated in Table 15 below, it is preferable to remove a part of the matrix 25 to obtain the carbon nanotubes 26 in which the tip portion protrudes from the matrix 25. In this way, the electron-emitting part 15 of the structure shown to a of FIG. 18 can be obtained.
[668] TABLE 15
[669] Etching Solution: Hydrochloric Acid
[670] Etching time: 10 seconds to 30 seconds
[671] Etching Temperature: 10 ~ 60 ℃
[672] The etching of the matrix 25 changes the surface state of some or all of the carbon nanotubes 26 (for example, oxygen atoms, oxygen molecules, and fluorine atoms are adsorbed on the surface thereof) and inert to the field emission. There may be. Therefore, it is preferable to carry out plasma treatment in a hydrogen gas atmosphere to the electron-emitting part 15 thereafter, whereby the electron-emitting part 15 is activated and the electrons from the electron-emitting part 15 are discharged. The emission efficiency can be further improved. The conditions of the plasma treatment may be the same as those shown in Table 11.
[673] [Process-2070]
[674] Subsequently, in the same manner as in [Step-230] of Example 2, a fluorocarbon thin film (CF) using a fluorine-containing hydrocarbon gas on the surface of the carbon-based material layer 23 made of carbon nanotubes 26 is used. By forming the _X thin film) 24, the electron-emitting portion 15 made of the carbon-based material layer 23 and the fluorocarbon thin film 24 formed on the surface of the carbon-based material layer 23 is obtained.
[675] [Process-2080]
[676] Subsequently, in the same manner as in [Step-860] in Example 8, it is possible to retreat the sidewall surface of the second opening 14B provided in the insulating layer 12 by isotropic etching to open the gate electrode 13. It is preferable from a viewpoint of exposing a distal end. Next, the mask layer 27 is removed. In this way, the field emission device shown in b of FIG. 18 can be completed.
[677] [Process-2090]
[678] Thereafter, the display device is assembled in the same manner as in the [Step-130] of the first embodiment.
[679] In addition, if [Step-330] of Example 3 is executed in [Step-2070], the electron-emitting device according to Embodiment 3C of the present invention, its manufacturing method, and the electric field according to Embodiment 6B of the present invention. A light emitting device and a display device according to the sixth aspect of the present invention are obtained, and the manufacturing method of the field emission device and the display device manufacturing method according to the sixth aspect of the present invention are carried out.
[680] Alternatively, if [Step-2000] to [Step-2030], [Step-2060], [Step-2070], and [Step-2090] are executed, the electron-emitting device according to the second B aspect of the present invention, The field emission device according to the second B aspect of the invention, the display device according to the second B aspect of the present invention is obtained, and the manufacturing method of the electron emitting device according to the second C aspect of the present invention, and the second C aspect of the present invention. The manufacturing method of the related field emission element and the manufacturing method of the display device concerning the 2C aspect of this invention were implemented.
[681] Alternatively, if [Step-2000] to [Step-2030], [Step-2060], [Step-330], and [Step-2090] are executed, the electron-emitting device according to the third aspect of the present invention, present The field emission device according to the third aspect of the invention, the display device according to the third aspect of the present invention is obtained, and the manufacturing method of the electron emission device according to the third aspect of the present invention, the third aspect of the invention The manufacturing method of the related field emission element and the manufacturing method of the display device concerning the 3C aspect of this invention were implemented.
[682] Alternatively, if [Step-1800], [Step-2010] to [Step-2030], [Step-1830], [Step-2060], [Step-2070], and [Step-1840] are executed, the present invention is performed. An electron emitting device according to Embodiment 2B of the present invention, a field emission device according to Embodiment 5B of the present invention, and a display device according to Embodiment 5B of the present invention are obtained, and electron emission according to Embodiment 2C of the present invention. The method of manufacturing the device, the method of manufacturing the field emission device according to the eighth C aspect of the present invention, and the method of manufacturing the display device according to the eighth C aspect of the present invention are carried out.
[683] Alternatively, if [Step-1800], [Step-2010] to [Step-2030], [Step-1830], [Step-2060], [Step-330], and [Step-1840] are executed, the present invention is performed. An electron emitting device according to Embodiment 3B of the present invention, a field emission device according to Embodiment 6B of the present invention, and a display device according to Embodiment 6B of the present invention are obtained, and electron emission according to Embodiment 3C of the present invention. The manufacturing method of the device, the manufacturing method of the field emission device according to the ninth aspect of the present invention, and the manufacturing method of the display device according to the ninth aspect of the present invention are performed.
[684] As mentioned above, although this invention was demonstrated based on the Example, this invention is not limited to these. The structure and structure of the anode panel, the cathode panel, the display device, or the field emission device described in the embodiments are exemplifications and can be changed as appropriate, and the method of manufacturing the anode panel, the cathode panel, the display device, or the field emission device, various conditions, and the use thereof. The material is also an example and can be changed in red. Moreover, the various materials used in manufacture of an anode panel and a cathode panel are also illustrations, and can be changed suitably. In the display device, only color display has been described as an example, but monochrome display is also possible.
[685] Modifications of the two-electrode type display device described in Examples 1 to 4 will be described below. Typical sectional drawing of the modification of this display apparatus is the same as that shown in FIG. In the modification of this display device, the cathode electrode 11 and the anode electrode 33 have a stripe shape, and a dead image of the striped cathode electrode 11 and a striped image of the striped anode electrode 33 are formed. It has an orthogonal structure. Specifically, the cathode electrode 11 extends in the vertical direction to the ground of the drawing of FIG. 1, and the anode electrode 33 extends to the left and right direction of the drawing of the drawing. In the cathode panel CP in the modification of this display device, a plurality of electron emission regions composed of a plurality of the field emission devices as described above are formed in the effective region in a two-dimensional matrix form. It is not necessary to provide a switching element between the cathode electrode and the cathode electrode control circuit 40A.
[686] In the modified example of the display device, electrons are emitted from the electron emission unit 15 based on the quantum tunnel effect based on the electric field formed by the anode electrode 33, and the electrons are discharged from the anode electrode 33. Is pulled in and impinges on the phosphor layer 31. That is, electrons are emitted from the electron emission unit 15 positioned in the region where the dead image of the anode electrode 33 and the dead image of the cathode electrode overlap (an anode / cathode electrode overlapping region), so-called simple matrixes. In this manner, the display device is driven. Specifically, a negative voltage is applied from the cathode electrode control circuit 40A to the cathode electrode 11 relatively, and the anode electrode control circuit 42 is positive relative to the anode electrode 33. Apply a voltage of. As a result, electrons located in the anode / cathode electrode overlapping region between the column-selected cathode electrode 11 and the row-selected anode electrode 33 (or the row-selected cathode electrode 11 and the column-selected anode electrode 33) Electrons are selectively emitted from the emitting portion 15 in the vacuum space, and these electrons collide with the phosphor layer 31 constituting the anode panel AP attracted to the anode electrode 33, thereby causing the phosphor layer 31 to fall. Here, it emits light.
[687] As a method of providing a gate electrode, a metal layer of a target having a plurality of openings is prepared in advance, and a gate electrode supporting member, for example, made of an insulating material is formed on the support 10. And a method in which the metal layer is stretched over the carbonaceous material layer or over the selective growth region so as to contact the top surface of the gate electrode support member. In this case, the selective growth region and the carbonaceous material layer may be formed before the gate electrode is provided, and the selective growth region and the carbonaceous material layer may be formed after the gate electrode is provided. The selective growth region may be formed before the formation, and the carbon-based material layer may be formed after the gate electrode is provided. In these cases, the selective growth region 20 may not be formed immediately below the first opening 14A. By such a method, the field emission device or display device which concerns on 4th-6th aspect of this invention can be obtained, and the manufacturing method of the field emission element which concerns on 7th-9th aspect of this invention, or The manufacturing method of the display device is performed.
[688] In the field emission device of the present invention, the second insulating layer 17 is again provided on the gate electrode 13 and the insulating layer 12, and the convergence electrode 18 is provided on the second insulating layer 17. Also good. 19 is a schematic partial sectional view of a field emission device having such a structure. A third opening 19 is provided in the second insulating layer 17 in communication with the first opening 14A. For example, in Example 8, in the eighth embodiment, after forming the stripe-shaped gate electrode 13 on the insulating layer 12, the second electrode is formed. After the layer 17 is formed, and then the patterned convergence electrode 18 is formed on the second insulating layer 17, the third opening 19 is formed on the convergence electrode 18 and the second insulating layer 17. ) And the first opening 14A may be provided in the gate electrode 13. Further, depending on the patterning of the converging electrodes, the condensing electrodes of a type in which one or a plurality of electron emitting portions or converging electrode units corresponding to one or a plurality of pixels are assembled may be used, or the effective area may be one. It is also possible to use a convergence electrode of a type coated with a sheet-shaped conductive material. In addition, the field emission element in FIG. 19 is an illustration, It goes without saying that it can be set as another field emission element.
[689] The converging electrode is not only formed in this manner, but each pixel is formed on both surfaces of a metal plate made of 42% Ni-Fe alloy having a thickness of several tens of micrometers, for example, SiO ₂ . A converging electrode can be manufactured by forming an opening part by punching or etching in the area | region corresponding to this. Then, the cathode panel, the metal plate, and the anode panel are stacked, the frame is disposed on the outer periphery of both panels, and the heat treatment is performed to bond the insulating film and the insulating layer 12 formed on one side of the metal plate to the other side of the metal plate. The display device can also be completed by adhering the insulating film formed on the convenience surface and the anode panel, integrating these members, and then vacuum encapsulating.
[690] The gate electrode may be a gate electrode of a type in which the effective area is covered with one sheet of conductive material (having the first opening). In this case, a positive voltage is applied to this gate electrode. Then, a switching element made of, for example, a TFT is provided between the cathode electrode constituting each pixel and the cathode electrode control circuit, and application to the cathode electrode constituting each pixel is performed by the operation of the switching element. The state is controlled, and the light emitting state of the pixel is controlled.
[691] Alternatively, the cathode electrode may be a cathode electrode in which an effective area is covered with one sheet of conductive material. In this case, a voltage is applied to this cathode electrode. Then, a switching element made of, for example, a TFT is provided between the gate voltage constituting each pixel and the gate voltage control circuit, and the operation is applied to the gate electrode constituting each pixel by the operation of the switching element. The state is controlled, and the light emitting state of the pixel is controlled.
[692] The anode electrode may be an anode electrode in which the effective area is covered with a sheet-like conductive material, and the one or more electron emitting portions or the anode electrode units corresponding to one or the plurality of pixels are collected. It may be an anode of the type. In the case where the anode electrode is of the former configuration, such an anode electrode may be connected to the anode electrode control circuit, and in the case where the anode electrode is the latter configuration, for example, each anode electrode unit may be connected to the anode electrode control circuit.
[693] The electron-emitting device of the present invention can also be applied to devices commonly referred to as surface conduction electron-emitting devices. The surface conduction electron-emitting device is, for example, tin oxide (SnO ₂ ), gold (Au), indium oxide (In ₂ O ₃ ) / tin oxide (SnO ₂ ), carbon, palladium oxide on a support made of glass. A pair of electrodes made of a conductive material such as (PdO) and having a small area and arranged at a predetermined interval (gap) are formed in a matrix. The row direction wiring is connected to one electrode in the pair of electrodes, and the column direction wiring is connected to the other electrode in the pair of electrodes. In such a surface conduction electron-emitting device, a selective growth region is formed on the surface of each pair of electrodes (corresponding to the conductive layer), and an electron-emitting portion made of a carbon-based material layer is formed thereon. By applying a voltage to the pair of electrodes, an electric field is added to the carbonaceous material layer facing the gap, and electrons are emitted from the carbonaceous material layer. By impinging these electrons on the phosphor layer on the anode panel, the phosphor layer is excited to emit light, and a desired image can be obtained.
[694] In the present invention, as a result of the electron emitting portion or the carbon-based material layer expressing a kind of water repellency, a gas or gaseous substance emitted from various members constituting the cathode electrode or the display device, in particular, moisture is discharged (specifically, Can be prevented from adhering to and adsorbing on the carbon-based material layer). Therefore, deterioration of the characteristics of the electron emitting portion can be prevented.
[695] Furthermore, since the electron-emitting part is composed of a carbon-based material layer, a cold cathode field emission device or an electron-emitting device having a low threshold voltage and high electron emission efficiency can be obtained, and also has a low power consumption and high quality cold cathode. A field emission display device can be obtained. Furthermore, even when the image quality of the effective region is increased and the number of formation of the cold cathode field emission device is remarkably increased, the emission area of each cold cathode field emission device can be formed with high accuracy. The electron-emitting efficiency of each electron-emitting part is uniformed over the whole of the film, and the high-quality cold cathode field emission display device having extremely low luminance unevenness can be manufactured. In addition, since the film formation of the carbonaceous material layer can be performed at a relatively low temperature, a glass substrate can be used as the support, and manufacturing cost can be reduced.
[696] Furthermore, in the present invention, when the selective growth region is formed, an electron emission portion made of a carbon-based material layer can be provided at a desired portion of the conductor layer and the cathode electrode, and further, the carbon-based material layer can be made into a desired shape. There is no need to pattern the carbon-based material layer. Moreover, if an electron emission part is comprised from a carbon nanotube structure, an electron emission part can be formed easily.

权利要求:
Claims (166)
[1" claim-type="Currently amended] It is composed of an electron emitting portion formed on the conductor layer,
This electron emission portion is composed of a carbon-based material layer,
The carbonaceous material layer is formed using a hydrocarbon gas and a fluorine-containing hydrocarbon gas.
[2" claim-type="Currently amended] The method of claim 1,
The electron-emitting device, wherein the conductor layer is made of copper, silver, or gold.
[3" claim-type="Currently amended] The method of claim 1,
An electron emitting device characterized in that a selective growth region is formed between the conductor layer and the carbonaceous material layer.
[4" claim-type="Currently amended] It is composed of an electron emitting portion formed on the conductor layer,
This electron-emitting part consists of a carbonaceous material layer and the fluorocarbon thin film formed in the surface of this carbonaceous material layer,
The fluorocarbon thin film is formed by using a fluorine-containing hydrocarbon gas.
[5" claim-type="Currently amended] The method of claim 4, wherein
The carbon-based material layer is formed using a hydrocarbon gas.
[6" claim-type="Currently amended] The method of claim 5,
The electron-emitting device, wherein the conductor layer is made of copper, silver, or gold.
[7" claim-type="Currently amended] The method of claim 5,
An electron emitting device characterized in that a selective growth region is formed between the conductor layer and the carbonaceous material layer.
[8" claim-type="Currently amended] The method of claim 4, wherein
An electron-emitting device comprising a carbon-based material layer made of a carbon nanotube structure.
[9" claim-type="Currently amended] It is composed of an electron emitting portion formed on the conductor layer,
This electron-emitting part consists of a carbon-based material layer,
The surface of this carbonaceous material layer is terminated with a fluorine atom, The electron emission device characterized by the above-mentioned.
[10" claim-type="Currently amended] The method of claim 9,
An electron-emitting device characterized in that termination at the fluorine atom on the surface of the carbon-based material layer is performed using a fluorine-containing hydrocarbon gas.
[11" claim-type="Currently amended] The method of claim 9,
The carbon-based material layer is formed using a hydrocarbon gas.
[12" claim-type="Currently amended] The method of claim 11,
The electron-emitting device, wherein the conductor layer is made of copper, silver, or gold.
[13" claim-type="Currently amended] The method of claim 11,
An electron emitting device characterized in that a selective growth region is formed between the conductor layer and the carbonaceous material layer.
[14" claim-type="Currently amended] The method of claim 9,
An electron-emitting device comprising a carbon-based material layer made of a carbon nanotube structure.
[15" claim-type="Currently amended] (a) a cathode electrode formed on a support and
(b) an electron emission section formed on the cathode electrode,
This electron-emitting part consists of a carbon-based material layer,
The carbonaceous material layer is formed using a hydrocarbon gas and a fluorine-containing hydrocarbon gas.
[16" claim-type="Currently amended] The method of claim 15,
A cold cathode field emission device, characterized in that a selective growth region is formed between the cathode electrode and the carbonaceous material layer.
[17" claim-type="Currently amended] (a) a cathode electrode formed on a support and
(b) an electron emission section formed on the cathode electrode,
This electron-emitting part consists of a carbonaceous material layer and the fluorocarbon thin film formed in the surface of this carbonaceous material layer,
The fluorocarbon thin film is formed using a fluorine-containing hydrocarbon gas, the cold cathode field emission device.
[18" claim-type="Currently amended] The method of claim 17,
The carbonaceous material layer is formed using a hydrocarbon-based gas.
[19" claim-type="Currently amended] The method of claim 18,
A cold cathode field emission device, characterized in that a selective growth region is formed between the cathode electrode and the carbonaceous material layer.
[20" claim-type="Currently amended] The method of claim 17,
The carbon-based material layer is composed of a carbon nanotube structure, characterized in that the cold cathode field emission device.
[21" claim-type="Currently amended] (a) a cathode electrode formed on a support and
(b) an electron emission section formed on the cathode electrode,
This electron-emitting part consists of a carbonaceous material layer,
The surface of this carbonaceous material layer is terminated with a fluorine atom, The cold cathode field emission device characterized by the above-mentioned.
[22" claim-type="Currently amended] The method of claim 21,
The terminal of the fluorine atom on the surface of the carbon-based material layer is terminated using a fluorine-containing hydrocarbon gas.
[23" claim-type="Currently amended] The method of claim 21,
The carbonaceous material layer is formed using a hydrocarbon-based gas.
[24" claim-type="Currently amended] The method of claim 23, wherein
A cold cathode field emission device, characterized in that a selective growth region is formed between the cathode electrode and the carbonaceous material layer.
[25" claim-type="Currently amended] The method of claim 21,
The carbon-based material layer is composed of a carbon nanotube structure, characterized in that the cold cathode field emission device.
[26" claim-type="Currently amended] (a) a cathode electrode formed on a support,
(b) a gate electrode formed over the cathode and having an opening;
(c) an electron emitting portion formed on a portion of the cathode electrode located at the bottom of the opening portion,
This electron-emitting part consists of a carbon-based material layer,
The carbonaceous material layer is formed using a hydrocarbon gas and a fluorine-containing hydrocarbon gas.
[27" claim-type="Currently amended] The method of claim 26,
The cathode electrode is made of copper, silver or gold, cold cathode field emission device.
[28" claim-type="Currently amended] The method of claim 26,
A cold cathode field emission device, characterized in that a selective growth region is formed between at least the cathode electrode and the carbon-based material layer.
[29" claim-type="Currently amended] The method of claim 26,
An insulating layer is formed on the support and the cathode electrode,
A second cathode opening communicating with an opening provided in the gate electrode is provided in the insulating layer.
[30" claim-type="Currently amended] (a) a cathode electrode formed on a support,
(b) a gate electrode formed over the cathode and having an opening;
(c) an electron emitting portion formed on a portion of the cathode electrode located at the bottom of the opening portion,
The electron emitting portion is composed of a carbonaceous material layer and a fluorocarbon thin film formed on the surface of the carbonaceous material layer,
The fluorocarbon thin film is formed using a fluorine-containing hydrocarbon gas, the cold cathode field emission device.
[31" claim-type="Currently amended] The method of claim 30,
The carbonaceous material layer is formed using a hydrocarbon-based gas.
[32" claim-type="Currently amended] The method of claim 31, wherein
The cathode electrode is made of copper, silver or gold, cold cathode field emission device.
[33" claim-type="Currently amended] The method of claim 31, wherein
A cold cathode field emission device, characterized in that a selective growth region is formed between at least the cathode electrode and the carbon-based material layer.
[34" claim-type="Currently amended] The method of claim 30,
An insulating layer is formed on the support and the cathode electrode,
A second cathode opening communicating with an opening provided in the gate electrode is provided in the insulating layer.
[35" claim-type="Currently amended] The method of claim 30,
The carbon-based material layer is composed of a carbon nanotube structure, characterized in that the cold cathode field emission device.
[36" claim-type="Currently amended] (a) a cathode electrode formed on a support,
(b) a gate electrode formed over the cathode and having an opening;
(c) an electron emitting portion formed on a portion of the cathode electrode located at the bottom of the opening portion,
This electron-emitting part consists of a carbon-based material layer,
The surface of this carbonaceous material layer is terminated with a fluorine atom, The cold cathode field emission device characterized by the above-mentioned.
[37" claim-type="Currently amended] The method of claim 36,
The terminal of the fluorine atom on the surface of the carbon-based material layer is terminated using a fluorine-containing hydrocarbon gas.
[38" claim-type="Currently amended] The method of claim 36,
The carbonaceous material layer is formed using a hydrocarbon-based gas.
[39" claim-type="Currently amended] The method of claim 38,
The cathode electrode is made of copper, silver or gold, cold cathode field emission device.
[40" claim-type="Currently amended] The method of claim 38,
A cold cathode field emission device, characterized in that a selective growth region is formed between at least the cathode electrode and the carbon-based material layer.
[41" claim-type="Currently amended] The method of claim 36,
An insulating layer is formed on the support and the cathode electrode,
A second cathode opening communicating with an opening provided in the gate electrode is provided in the insulating layer.
[42" claim-type="Currently amended] The method of claim 36,
The carbon-based material layer is composed of a carbon nanotube structure, characterized in that the cold cathode field emission device.
[43" claim-type="Currently amended] Composed of a plurality of pixels,
Each pixel comprises a cold cathode field emission element, an anode electrode and a phosphor layer provided on a substrate to face the cold cathode field emission element,
Cold cathode field emission device,
(a) a cathode electrode formed on a support and
(b) an electron emission section formed on the cathode electrode,
This electron-emitting part consists of a carbon-based material layer,
The carbonaceous material layer is formed using a hydrocarbon gas and a fluorine-containing hydrocarbon gas.
[44" claim-type="Currently amended] The method of claim 43,
A cold cathode field emission display device, wherein a selective growth region is formed between the cathode electrode and the carbonaceous material layer.
[45" claim-type="Currently amended] Composed of a plurality of pixels,
Each pixel comprises a cold cathode field emission element, an anode electrode and a phosphor layer provided on a substrate to face the cold cathode field emission element,
Cold cathode field emission device,
(a) a cathode electrode formed on a support and
(b) an electron emission section formed on the cathode electrode,
This electron-emitting part consists of a carbonaceous material layer and the fluorocarbon thin film formed in the surface of this carbonaceous material layer,
The fluorocarbon thin film is formed using a fluorine-containing hydrocarbon gas, the cold cathode field emission display device.
[46" claim-type="Currently amended] The method of claim 45,
And a carbonaceous material layer is formed using a hydrocarbon-based gas.
[47" claim-type="Currently amended] The method of claim 46,
A cold cathode field emission display device, wherein a selective growth region is formed between the cathode electrode and the carbonaceous material layer.
[48" claim-type="Currently amended] The method of claim 45,
A cold cathode field emission display device, wherein the carbon material layer is formed of a carbon nanotube structure.
[49" claim-type="Currently amended] Composed of a plurality of pixels,
Each pixel comprises a cold cathode field emission element, an anode electrode and a phosphor layer provided on a substrate to face the cold cathode field emission element,
Cold cathode field emission device,
(a) a cathode electrode formed on a support and
(b) an electron emission section formed on the cathode electrode,
This electron-emitting part consists of a carbon-based material layer,
The surface of the carbon-based material layer is terminated with a fluorine atom, the cold cathode field emission display device.
[50" claim-type="Currently amended] The method of claim 49,
The terminal of the fluorine atom on the surface of the carbon-based material layer is terminated by using a fluorine-containing hydrocarbon gas.
[51" claim-type="Currently amended] The method of claim 49,
And a carbonaceous material layer is formed using a hydrocarbon-based gas.
[52" claim-type="Currently amended] The method of claim 51,
A cold cathode field emission display device, wherein a selective growth region is formed between the cathode electrode and the carbonaceous material layer.
[53" claim-type="Currently amended] The method of claim 49,
A cold cathode field emission display device, wherein the carbon material layer is formed of a carbon nanotube structure.
[54" claim-type="Currently amended] Composed of a plurality of pixels,
Each pixel comprises a cold cathode field emission element, an anode electrode and a phosphor layer provided on a substrate to face the cold cathode field emission element,
Cold cathode field emission device,
(a) a cathode electrode formed on a support,
(b) a gate electrode formed over the cathode and having an opening;
(c) an electron-emitting portion formed on the portion of the cathode electrode located at the bottom of the opening portion,
This electron-emitting part consists of a carbon-based material layer,
The carbonaceous material layer is formed using a hydrocarbon gas and a fluorine-containing hydrocarbon gas.
[55" claim-type="Currently amended] The method of claim 54,
The cathode electrode is a cold cathode field emission display device, characterized in that made of copper, silver or gold.
[56" claim-type="Currently amended] The method of claim 54,
A cold cathode field emission display device characterized in that a selective growth region is formed between at least the cathode electrode and the carbonaceous material layer.
[57" claim-type="Currently amended] The method of claim 54,
An insulating layer is formed on the support and the cathode electrode,
And a second opening communicating with the opening provided in the gate electrode is provided in the insulating layer.
[58" claim-type="Currently amended] Composed of a plurality of pixels,
Each pixel comprises a cold cathode field emission element, an anode electrode and a phosphor layer provided on a substrate to face the cold cathode field emission element,
Cold cathode field emission device,
(a) a cathode electrode formed on a support,
(b) a gate electrode formed over the cathode and having an opening;
(c) an electron-emitting portion formed on the portion of the cathode electrode located at the bottom of the opening portion,
This electron-emitting part consists of a carbonaceous material layer and the fluorocarbon thin film formed in the surface of this carbonaceous material layer,
The fluorocarbon thin film is formed using a fluorine-containing hydrocarbon gas, the cold cathode field emission display device.
[59" claim-type="Currently amended] The method of claim 58,
And a carbonaceous material layer is formed using a hydrocarbon-based gas.
[60" claim-type="Currently amended] The method of claim 59,
The cathode electrode is a cold cathode field emission display device, characterized in that made of copper, silver or gold.
[61" claim-type="Currently amended] The method of claim 59,
A cold cathode field emission display device characterized in that a selective growth region is formed at least between the cathode electrode and the carbonaceous material layer.
[62" claim-type="Currently amended] The method of claim 58,
An insulating layer is formed on the support and the cathode electrode,
And a second opening communicating with the opening provided in the gate electrode is provided in the insulating layer.
[63" claim-type="Currently amended] The method of claim 58,
A cold cathode field emission display device, wherein the carbon material layer is formed of a carbon nanotube structure.
[64" claim-type="Currently amended] Composed of a plurality of pixels,
Each pixel comprises a cold cathode field emission element, an anode electrode and a phosphor layer provided on a substrate to face the cold cathode field emission element,
Cold cathode field emission device,
(a) a cathode electrode formed on a support,
(b) a gate electrode formed over the cathode and having an opening;
(c) an electron-emitting portion formed on the portion of the cathode electrode located at the bottom of the opening portion,
This electron-emitting part consists of a carbon-based material layer,
The surface of the carbon-based material layer is terminated with a fluorine atom, the cold cathode field emission display device.
[65" claim-type="Currently amended] The method of claim 64, wherein
The terminal of the fluorine atom on the surface of the carbon-based material layer is terminated by using a fluorine-containing hydrocarbon gas.
[66" claim-type="Currently amended] The method of claim 64, wherein
And a carbonaceous material layer is formed using a hydrocarbon-based gas.
[67" claim-type="Currently amended] The method of claim 66,
The cathode electrode is a cold cathode field emission display device, characterized in that made of copper, silver or gold.
[68" claim-type="Currently amended] The method of claim 66,
A cold cathode field emission display device characterized in that a selective growth region is formed at least between the cathode electrode and the carbonaceous material layer.
[69" claim-type="Currently amended] The method of claim 64, wherein
An insulating layer is formed on the support and the cathode electrode,
And a second opening communicating with the opening provided in the gate electrode is provided in the insulating layer.
[70" claim-type="Currently amended] The method of claim 64, wherein
A cold cathode field emission display device, wherein the carbon material layer is formed of a carbon nanotube structure.
[71" claim-type="Currently amended] A method of manufacturing an electron-emitting device comprising the step of forming an electron-emitting portion comprising a carbon-based material layer on a conductor layer using a hydrocarbon-based gas and a fluorine-containing hydrocarbon-based gas.
[72" claim-type="Currently amended] The method of claim 71, wherein
And forming a selective growth region on the conductor layer before forming the carbonaceous material layer.
[73" claim-type="Currently amended] (A) forming a carbon-based material layer on the conductive layer,
(B) forms a fluorocarbon thin film on the surface of the carbon-based material layer by using a fluorine-containing hydrocarbon gas, whereby electron emission consisting of the carbon-based material layer and the fluorocarbon thin film formed on the surface of the carbon-based material layer The manufacturing method of the electron emitting device characterized by including the process of obtaining a part.
[74" claim-type="Currently amended] The method of claim 73,
The method for manufacturing an electron emission device according to (A), wherein a carbonaceous material layer is formed on the conductor layer using a hydrocarbon gas.
[75" claim-type="Currently amended] The method of claim 74, wherein
And forming a selective growth region on the conductor layer before forming the carbonaceous material layer.
[76" claim-type="Currently amended] The method of claim 73,
In the said process (A), after apply | coating the thing which disperse | distributed the carbon nanotube structure to the binder material on the conductor layer, baking or hardening of a binder material forms a carbon type material layer, The electron characterized by the above-mentioned. Method of manufacturing the discharge device.
[77" claim-type="Currently amended] The method of claim 73,
In the step (A), after the metal compound solution in which the carbon nanotube structure is dispersed is applied onto the conductor layer, the metal compound is fired to form a carbon-based material layer. Way.
[78" claim-type="Currently amended] (A) forming a carbon-based material layer on the conductive layer,
(B) terminating the surface of the carbonaceous material layer by using a fluorine-containing hydrocarbon gas, thereby obtaining an electron emitting portion comprising the carbonaceous material layer whose surface is terminated with a fluorine atom. Method of manufacturing the device.
[79" claim-type="Currently amended] The method of claim 78,
The method for manufacturing an electron emission device according to (A), wherein a carbonaceous material layer is formed on the conductor layer using a hydrocarbon gas.
[80" claim-type="Currently amended] The method of claim 79,
And forming a selective growth region on the conductor layer before forming the carbonaceous material layer.
[81" claim-type="Currently amended] The method of claim 78,
In the said process (A), after apply | coating the thing which disperse | distributed the carbon nanotube structure to the binder material on the conductor layer, baking or hardening of a binder material forms a carbon type material layer, The electron characterized by the above-mentioned. Method of manufacturing the discharge device.
[82" claim-type="Currently amended] The method of claim 78,
In the step (A), after the metal compound solution in which the carbon nanotube structure is dispersed is applied onto the conductor layer, the metal compound is fired to form a carbon-based material layer. Way.
[83" claim-type="Currently amended] (A) forming a cathode on the support;
(B) forming an electron emitting portion on the cathode electrode,
This electron emission portion is composed of a carbon-based material layer,
The step of forming the electron emitting portion is a step of forming the carbonaceous material layer using a hydrocarbon gas and a fluorine-containing hydrocarbon gas, wherein the cold cathode field emission device is manufactured.
[84" claim-type="Currently amended] 84. The method of claim 83,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming an electron emitting portion on the cathode, an electron emitting portion is formed on the selective growth region.
[85" claim-type="Currently amended] (A) forming a cathode on the support;
(B) forming a carbon-based material layer on the cathode;
(C) the fluorine-containing thin film is formed on the surface of the carbon-based material layer by using a fluorine-containing hydrocarbon gas, whereby the electron-emitting portion composed of the carbon-based material layer and the fluorocarbon thin film formed on the surface of the carbon-based material layer A process for producing a cold cathode field emission device, comprising the step of obtaining.
[86" claim-type="Currently amended] 86. The method of claim 85,
The method for manufacturing a cold cathode field emission device according to (B), wherein a carbon-based material layer is formed on the cathode using a hydrocarbon-based gas.
[87" claim-type="Currently amended] 87. The method of claim 86,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming an electron emitting portion on the cathode, an electron emitting portion is formed on the selective growth region.
[88" claim-type="Currently amended] 86. The method of claim 85,
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method for manufacturing a cold cathode field emission device.
[89" claim-type="Currently amended] 86. The method of claim 85,
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emitting device.
[90" claim-type="Currently amended] (A) forming a cathode on the support;
(B) forming a carbon-based material layer on the cathode;
(C) terminating the surface of the carbon-based material layer using a fluorine-containing hydrocarbon gas, thereby obtaining a electron-emitting portion consisting of a carbon-based material layer whose surface is terminated with a fluorine atom. Method of manufacturing the device.
[91" claim-type="Currently amended] 91. The method of claim 90,
In the step (B), a carbon-based material layer is formed on the cathode by using a hydrocarbon-based gas.
[92" claim-type="Currently amended] 92. The method of claim 91 wherein
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming an electron emitting portion on the cathode, an electron emitting portion is formed on the selective growth region.
[93" claim-type="Currently amended] 91. The method of claim 90,
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method for manufacturing a cold cathode field emission device.
[94" claim-type="Currently amended] 91. The method of claim 90,
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emitting device.
[95" claim-type="Currently amended] (A) forming a cathode on the support;
(B) forming an insulating layer on the support and the cathode;
(C) forming a gate electrode having an opening on the insulating layer;
(D) forming a second opening in the insulating layer in communication with the opening formed in the gate electrode, exposing the cathode electrode to the bottom of the second opening;
(E) forming an electron emitting portion on the cathode electrode exposed at the bottom of the second opening,
This electron-emitting part consists of a carbonaceous material layer,
The step of forming the electron emitting portion is a step of forming the carbonaceous material layer using a hydrocarbon gas and a fluorine-containing hydrocarbon gas, wherein the cold cathode field emission device is manufactured.
[96" claim-type="Currently amended] 96. The method of claim 95,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), an insulating layer is formed on the support, the selective growth region, and the cathode electrode,
In the step (D), a second opening in communication with the opening formed in the gate electrode is formed in the insulating layer, and the selective growth region is exposed at the bottom of the second opening.
In the step (E), the electron-emitting portion is formed on the selective growth region exposed to the bottom of the second opening.
[97" claim-type="Currently amended] 96. The method of claim 95,
Between the step (D) and the step (E), forming a selective growth region on the cathode electrode exposed at the bottom of the second opening,
In the step (E), instead of forming an electron emitting portion on the cathode electrode exposed at the bottom of the second opening, an electron emitting portion is formed on the selective growth region, wherein the cold cathode field emission device is manufactured. Way.
[98" claim-type="Currently amended] (A) forming a cathode on the support;
(B) forming an insulating layer on the support and the cathode;
(C) forming a gate electrode having an opening on the insulating layer;
(D) forming a second opening in the insulating layer in communication with the opening formed in the gate electrode, exposing the cathode electrode to the bottom of the second opening;
(E) forming an electron emitting portion on the cathode electrode exposed at the bottom of the second opening,
This electron-emitting part consists of a carbonaceous material layer and the fluorocarbon thin film formed in the surface of this carbonaceous material layer,
The step of forming the electron-emitting part includes the step of forming a fluorocarbon thin film on the surface of the formed carbon-based material layer by using a fluorine-containing hydrocarbon gas.
[99" claim-type="Currently amended] 99. The method of claim 98,
A method of manufacturing a cold cathode field emission device comprising forming a carbon-based material layer using a hydrocarbon gas in the step of forming an electron emission unit.
[100" claim-type="Currently amended] The method of claim 99, wherein
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), an insulating layer is formed on the support, the selective growth region, and the cathode electrode,
In the step (D), a second opening in communication with the opening formed in the gate electrode is formed in the insulating layer, and the selective growth region is exposed at the bottom of the second opening.
In the step (E), the electron-emitting portion is formed on the selective growth region exposed to the bottom of the second opening.
[101" claim-type="Currently amended] The method of claim 99, wherein
Between the step (D) and the step (E), forming a selective growth region on the cathode electrode exposed at the bottom of the second opening,
In the step (E), instead of forming an electron emitting portion on the cathode electrode exposed at the bottom of the second opening, an electron emitting portion is formed on the selective growth region, wherein the cold cathode field emission device is manufactured. Way.
[102" claim-type="Currently amended] 99. The method of claim 98,
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method for manufacturing a cold cathode field emission device.
[103" claim-type="Currently amended] 99. The method of claim 98,
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emitting device.
[104" claim-type="Currently amended] (A) forming a cathode on the support;
(B) forming an insulating layer on the support and the cathode;
(C) forming a gate electrode having an opening on the insulating layer;
(D) forming a second opening in the insulating layer in communication with the opening formed in the gate electrode, exposing the cathode electrode to the bottom of the second opening;
(E) forming an electron emitting portion on the cathode electrode exposed at the bottom of the second opening,
This electron-emitting part consists of a carbonaceous material layer,
The step of forming the electron-emitting part includes the step of terminating the surface of the formed carbon-based material layer by using a fluorine-containing hydrocarbon gas.
[105" claim-type="Currently amended] 105. The method of claim 104,
A method of manufacturing a cold cathode field emission device comprising forming a carbon-based material layer using a hydrocarbon gas in the step of forming an electron emission unit.
[106" claim-type="Currently amended] 105. The method of claim 105,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), an insulating layer is formed on the support, the selective growth region, and the cathode electrode,
In the step (D), a second opening in communication with the opening formed in the gate electrode is formed in the insulating layer, and the selective growth region is exposed at the bottom of the second opening.
In the step (E), the electron-emitting portion is formed on the selective growth region exposed to the bottom of the second opening.
[107" claim-type="Currently amended] 105. The method of claim 105,
Between the step (D) and the step (E), forming a selective growth region on the cathode electrode exposed at the bottom of the second opening,
In the step (E), instead of forming an electron emitting portion on the cathode electrode exposed at the bottom of the second opening, an electron emitting portion is formed on the selective growth region, wherein the cold cathode field emission device is manufactured. Way.
[108" claim-type="Currently amended] 105. The method of claim 104,
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method for manufacturing a cold cathode field emission device.
[109" claim-type="Currently amended] 105. The method of claim 104,
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emitting device.
[110" claim-type="Currently amended] (A) forming a cathode on the support;
(B) forming an electron emitting portion on the cathode;
(C) forming a gate electrode having an opening above the electron emission section;
This electron-emitting part consists of a carbonaceous material layer,
The step of forming the electron emitting portion is a step of forming the carbonaceous material layer using a hydrocarbon gas and a fluorine-containing hydrocarbon gas, wherein the cold cathode field emission device is manufactured.
[111" claim-type="Currently amended] 113. The method of claim 110,
Following the step (B), an insulating layer is formed on the entire surface,
Following the step (C), the second opening is formed in the insulating layer in communication with the opening provided in the gate electrode, and the carbon-based material layer is exposed at the bottom of the second opening. Manufacturing method.
[112" claim-type="Currently amended] 113. The method of claim 110,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming an electron emitting portion on the cathode, an electron emitting portion is formed on the selective growth region.
[113" claim-type="Currently amended] (A) forming a cathode on the support;
(B) forming an electron emitting portion on the cathode;
(C) forming a gate electrode having an opening above the electron emission section;
This electron emission part consists of a carbonaceous material layer and the fluorocarbon thin film formed in the surface of this carbonaceous material layer,
The step of forming the electron-emitting part includes the step of forming a fluorocarbon thin film on the surface of the formed carbon-based material layer by using a fluorine-containing hydrocarbon gas.
[114" claim-type="Currently amended] 113. The method of claim 113,
Following the step (B), an insulating layer is formed on the entire surface,
Following the step (C), the second opening is formed in the insulating layer in communication with the opening provided in the gate electrode, and the carbon-based material layer is exposed at the bottom of the second opening. Manufacturing method.
[115" claim-type="Currently amended] 113. The method of claim 113,
A method of manufacturing a cold cathode field emission device comprising forming a carbon-based material layer using a hydrocarbon gas in the step of forming an electron emission unit.
[116" claim-type="Currently amended] 116. The method of claim 115,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming an electron emitting portion on the cathode, an electron emitting portion is formed on the selective growth region.
[117" claim-type="Currently amended] 113. The method of claim 113,
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method for manufacturing a cold cathode field emission device.
[118" claim-type="Currently amended] 113. The method of claim 113,
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emitting device.
[119" claim-type="Currently amended] (A) forming a cathode on the support;
(B) forming an electron emitting portion on the cathode;
(C) forming a gate electrode having an opening above the electron emission section;
This electron-emitting part consists of a carbonaceous material layer,
The step of forming the electron-emitting part includes the step of terminating the surface of the formed carbon-based material layer by using a fluorine-containing hydrocarbon gas.
[120" claim-type="Currently amended] 119. The method of claim 119 wherein
Following the step (B), an insulating layer is formed on the entire surface,
Following the step (C), the second opening is formed in the insulating layer in communication with the opening provided in the gate electrode, and the carbon-based material layer is exposed at the bottom of the second opening. Manufacturing method.
[121" claim-type="Currently amended] 119. The method of claim 119 wherein
A method of manufacturing a cold cathode field emission device comprising forming a carbonaceous material layer using a hydrocarbon gas in the step of forming an electron emitting portion.
[122" claim-type="Currently amended] 128. The method of claim 121, wherein
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming an electron emitting portion on the cathode, an electron emitting portion is formed on the selective growth region.
[123" claim-type="Currently amended] 119. The method of claim 119 wherein
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method for manufacturing a cold cathode field emission device.
[124" claim-type="Currently amended] 119. The method of claim 119 wherein
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emitting device.
[125" claim-type="Currently amended] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
Cold cathode field emission device,
(A) forming a cathode on the support;
(B) based on the step of forming an electron emitting portion on the cathode electrode,
This electron-emitting part consists of a carbonaceous material layer,
The process for forming the electron-emitting portion is a step of forming the carbon-based material layer using a hydrocarbon gas and a fluorine-containing hydrocarbon gas, wherein the electron cathode display device is manufactured.
[126" claim-type="Currently amended] 126. The method of claim 125,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming the electron emitting portion on the cathode, the electron emitting portion is formed on the selective growth region.
[127" claim-type="Currently amended] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
Cold cathode field emission device,
(A) forming a cathode on the support;
(B) forming a carbon-based material layer on the cathode;
(C) forming a fluorocarbon thin film on the surface of the carbon-based material layer using a fluorine-containing hydrocarbon gas, thereby obtaining an electron emitting portion comprising the carbon-based material layer and the fluorocarbon thin film formed on the surface of the carbon-based material layer A method of manufacturing a cold cathode field emission display device, characterized in that formed on the basis of the present invention.
[128" claim-type="Currently amended] 127. The method of claim 127, wherein
The method for manufacturing a cold cathode field emission display according to (B), wherein a carbonaceous material layer is formed on the cathode using a hydrocarbon gas.
[129" claim-type="Currently amended] 129. The method of claim 128,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming the electron emitting portion on the cathode, the electron emitting portion is formed on the selective growth region.
[130" claim-type="Currently amended] 127. The method of claim 127, wherein
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method of manufacturing a cold cathode field emission display device.
[131" claim-type="Currently amended] 127. The method of claim 127, wherein
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emission display device.
[132" claim-type="Currently amended] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
Cold cathode field emission device,
(A) forming a cathode on the support;
(B) forming a carbon-based material layer on the cathode;
(C) terminating the surface of the carbonaceous material layer by using a fluorine-containing hydrocarbon gas, and thereby forming the film based on the step of obtaining an electron emitting portion formed of the carbonaceous material layer terminated with fluorine atoms. Method of manufacturing a cold cathode field emission display device.
[133" claim-type="Currently amended] 133. The method of claim 132,
In the step (B), a carbon-based material layer is formed on the cathode by using a hydrocarbon-based gas.
[134" claim-type="Currently amended] 133. The method of claim 133,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming the electron emitting portion on the cathode, the electron emitting portion is formed on the selective growth region.
[135" claim-type="Currently amended] 133. The method of claim 132,
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method of manufacturing a cold cathode field emission display device.
[136" claim-type="Currently amended] 133. The method of claim 132,
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emission display device.
[137" claim-type="Currently amended] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
Cold cathode field emission device,
(A) forming a cathode on the support;
(B) forming an insulating layer on the support and the cathode;
(C) forming a gate electrode having an opening on the insulating layer;
(D) forming a second opening in the insulating layer in communication with the opening formed in the gate electrode, exposing the cathode electrode to the bottom of the second opening;
(E) forming on the cathode electrode exposed to the bottom of the second opening, on the basis of the step of forming an electron emitting portion;
This electron-emitting part consists of a carbonaceous material layer,
The process for forming the electron-emitting portion is a step of forming the carbon-based material layer using a hydrocarbon gas and a fluorine-containing hydrocarbon gas, wherein the electron cathode display device is manufactured.
[138" claim-type="Currently amended] 138. The method of claim 137,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), an insulating layer is formed on the support, the selective growth region, and the cathode electrode,
In the step (D), a second opening in communication with the opening formed in the gate electrode is formed in the insulating layer, and the selective growth region is exposed at the bottom of the second opening.
In the step (E), the electron-emitting portion is formed on the selective growth region exposed to the bottom of the second opening.
[139" claim-type="Currently amended] 138. The method of claim 137,
Between the step (D) and the step (E), forming a selective growth region on the cathode electrode exposed at the bottom of the second opening,
In the above step (E), instead of forming the electron emitting portion on the cathode electrode exposed at the bottom of the second opening portion, the electron emitting portion is formed on the selective growth region of the cold cathode field emission display device. Manufacturing method.
[140" claim-type="Currently amended] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
Cold cathode field emission device,
(A) forming a cathode on the support;
(B) forming an insulating layer on the support and the cathode;
(C) forming a gate electrode having an opening on the insulating layer;
(D) forming a second opening in the insulating layer in communication with the opening formed in the gate electrode, exposing the cathode electrode to the bottom of the second opening;
(E) forming on the cathode electrode exposed to the bottom of the second opening, on the basis of the step of forming an electron emitting portion;
This electron emission part consists of a carbonaceous material layer and the fluorocarbon thin film formed in the surface of this carbonaceous material layer,
The step of forming the electron emitting portion includes a step of forming a fluorocarbon thin film using a fluorine-containing hydrocarbon gas on the surface of the formed carbon-based material layer, the manufacturing method of the cold cathode field emission display device.
[141" claim-type="Currently amended] 141. The method of claim 140,
A method for manufacturing a cold cathode field emission display device, characterized in that the carbon-based material layer is formed using a hydrocarbon gas in the step of forming an electron emission unit.
[142" claim-type="Currently amended] The method of claim 141, wherein
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), an insulating layer is formed on the support, the selective growth region, and the cathode electrode,
In the step (D), a second opening in communication with the opening formed in the gate electrode is formed in the insulating layer, and the selective growth region is exposed at the bottom of the second opening.
In the step (E), the electron-emitting portion is formed on the selective growth region exposed to the bottom of the second opening.
[143" claim-type="Currently amended] The method of claim 141, wherein
Between the step (D) and the step (E), forming a selective growth region on the cathode electrode exposed at the bottom of the second opening,
In the above step (E), instead of forming the electron emitting portion on the cathode electrode exposed at the bottom of the second opening portion, the electron emitting portion is formed on the selective growth region of the cold cathode field emission display device. Manufacturing method.
[144" claim-type="Currently amended] 141. The method of claim 140,
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method of manufacturing a cold cathode field emission display device.
[145" claim-type="Currently amended] 141. The method of claim 140,
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emission display device.
[146" claim-type="Currently amended] The cold cathode field electrons which arrange | position a board | substrate with an anode electrode and a phosphor layer, and the support body in which the cold cathode field emission device was formed so that a phosphor layer and a cold cathode field emission device may oppose, and join a board | substrate and a support body in the periphery part Method of manufacturing the emission display device,
Cold cathode field emission device,
(A) forming a cathode on the support;
(B) forming an insulating layer on the support and the cathode;
(C) forming a gate electrode having an opening on the insulating layer;
(D) forming a second opening in the insulating layer in communication with the opening formed in the gate electrode, exposing the cathode electrode to the bottom of the second opening;
(E) forming on the cathode electrode exposed to the bottom of the second opening, on the basis of the step of forming an electron emitting portion;
This electron-emitting part consists of a carbonaceous material layer,
The step of forming the electron emitting portion includes the step of terminating the surface of the formed carbonaceous material layer by using a fluorine-containing hydrocarbon gas.
[147" claim-type="Currently amended] 145. The method of claim 146,
A method for manufacturing a cold cathode field emission display device, characterized in that the carbon-based material layer is formed using a hydrocarbon gas in the step of forming an electron emission unit.
[148" claim-type="Currently amended] The method of claim 147, wherein
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), an insulating layer is formed on the support, the selective growth region, and the cathode electrode,
In the step (D), a second opening in communication with the opening formed in the gate electrode is formed in the insulating layer, and the selective growth region is exposed at the bottom of the second opening.
In the step (E), the electron-emitting portion is formed on the selective growth region exposed to the bottom of the second opening.
[149" claim-type="Currently amended] The method of claim 147, wherein
Between the step (D) and the step (E), forming a selective growth region on the cathode electrode exposed at the bottom of the second opening,
In the above step (E), instead of forming the electron emitting portion on the cathode electrode exposed at the bottom of the second opening portion, the electron emitting portion is formed on the selective growth region of the cold cathode field emission display device. Manufacturing method.
[150" claim-type="Currently amended] 145. The method of claim 146,
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method of manufacturing a cold cathode field emission display device.
[151" claim-type="Currently amended] 145. The method of claim 146,
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emission display device.
[152" claim-type="Currently amended] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
Cold cathode field emission device,
(A) forming a cathode on the support;
(B) forming an electron emitting portion on the cathode;
(C) formed on the upper side of the electron-emitting part based on a step of providing a gate electrode having an opening,
This electron-emitting part consists of a carbonaceous material layer,
The process for forming the electron-emitting portion is a step of forming the carbon-based material layer using a hydrocarbon gas and a fluorine-containing hydrocarbon gas, wherein the electron cathode display device is manufactured.
[153" claim-type="Currently amended] 152. The method of claim 152,
Following the step (B), an insulating layer is formed on the entire surface,
Subsequent to the step (C), the second opening is formed in the insulating layer in communication with the opening provided in the gate electrode, and the carbon-based material layer is exposed at the bottom of the second opening. Method of manufacturing the device.
[154" claim-type="Currently amended] 152. The method of claim 152,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming the electron emitting portion on the cathode, the electron emitting portion is formed on the selective growth region.
[155" claim-type="Currently amended] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
Cold cathode field emission device,
(A) forming a cathode on the support;
(B) forming an electron emitting portion on the cathode;
(C) formed on the upper side of the electron-emitting part based on a step of providing a gate electrode having an opening,
This electron emission part consists of a carbonaceous material layer and the fluorocarbon thin film formed in the surface of this carbonaceous material layer,
The step of forming the electron emitting portion includes a step of forming a fluorocarbon thin film using a fluorine-containing hydrocarbon gas on the surface of the formed carbon-based material layer, the manufacturing method of the cold cathode field emission display device.
[156" claim-type="Currently amended] 175. The method of claim 155,
Following the step (B), an insulating layer is formed on the entire surface,
Subsequent to the step (C), the second opening is formed in the insulating layer in communication with the opening provided in the gate electrode, and the carbon-based material layer is exposed at the bottom of the second opening. Method of manufacturing the device.
[157" claim-type="Currently amended] 175. The method of claim 155,
A method for manufacturing a cold cathode field emission display device, characterized in that the carbon-based material layer is formed using a hydrocarbon gas in the step of forming an electron emission unit.
[158" claim-type="Currently amended] 158. The method of claim 157,
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming the electron emitting portion on the cathode, the electron emitting portion is formed on the selective growth region.
[159" claim-type="Currently amended] 175. The method of claim 155,
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method of manufacturing a cold cathode field emission display device.
[160" claim-type="Currently amended] 175. The method of claim 155,
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emission display device.
[161" claim-type="Currently amended] The substrate on which the anode electrode and the phosphor layer are formed, and the support on which the cold cathode field emission device is formed are disposed so that the phosphor layer and the cold cathode field emission device face each other, and the cold cathode field emission that joins the substrate and the support at the periphery thereof. The manufacturing method of the display device,
Cold cathode field emission device,
(A) forming a cathode on the support;
(B) forming an electron emitting portion on the cathode;
(C) formed on the upper side of the electron-emitting part based on a step of providing a gate electrode having an opening,
This electron-emitting part consists of a carbonaceous material layer,
The step of forming the electron emitting portion includes the step of terminating the surface of the formed carbonaceous material layer by using a fluorine-containing hydrocarbon gas.
[162" claim-type="Currently amended] 161. The method of claim 161,
Following the step (B), an insulating layer is formed on the entire surface,
Subsequent to the step (C), the second opening is formed in the insulating layer in communication with the opening provided in the gate electrode, and the carbon-based material layer is exposed at the bottom of the second opening. Method of manufacturing the device.
[163" claim-type="Currently amended] 161. The method of claim 161,
A method for manufacturing a cold cathode field emission display device, characterized in that the carbon-based material layer is formed using a hydrocarbon gas in the step of forming an electron emission unit.
[164" claim-type="Currently amended] 163. The method of claim 163 wherein
Between the step (A) and the step (B), forming a selective growth region on the cathode electrode,
In the step (B), instead of forming the electron emitting portion on the cathode, the electron emitting portion is formed on the selective growth region.
[165" claim-type="Currently amended] 161. The method of claim 161,
In the step of forming the electron emitting portion, the carbon-based material layer is formed by applying the dispersion of the carbon nanotube structure to the binder material on the cathode electrode and then firing or curing the binder material. Method of manufacturing a cold cathode field emission display device.
[166" claim-type="Currently amended] 161. The method of claim 161,
In the step of forming an electron emitting portion, a cold cathode field electron is formed by applying a metal compound solution in which a carbon nanotube structure is dispersed on a cathode electrode, and then firing the metal compound. Method of manufacturing the emission display device.

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同族专利:

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公开号 | 公开日

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JP2003016954A|2003-01-17|

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WO2002091417A1|2002-11-14|

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US6991949B2|2006-01-31|

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EP1383151A4|2006-06-21|

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2001-04-25|Priority to JPJP-P-2001-00127361

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2001-04-25|Priority to JP2001127361

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2002-03-25|Priority to JP2002083898A

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2002-03-25|Priority to JPJP-P-2002-00083898

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2002-04-09|Application filed by 소니 가부시끼 가이샤

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2002-04-09|Priority to PCT/JP2002/003528

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2003-11-15|Publication of KR20030088063A

优先权:

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申请号 | 申请日 | 专利标题

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JPJP-P-2001-00127361|2001-04-25|

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JP2001127361|2001-04-25|

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JP2002083898A|JP2003016954A|2001-04-25|2002-03-25|Electron emission device and its manufacturing method, cold cathode field electron emission element and its manufacturing method, and cold cathode field electron emission display device and its manufacturing method|

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JPJP-P-2002-00083898|2002-03-25|

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PCT/JP2002/003528|WO2002091417A1|2001-04-25|2002-04-09|Electron emitter and its production method, cold-cathode field electron emitter and its production method, and cold-cathode filed electron emission display and its production method|