• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Provided are an etching solution of a copper single film or a copper molybdenum film containing two types of additives including hydrogen peroxide, organic acid, phosphate, nitrogen (N) and deionized water. More specifically, two additives comprising 8 to 20% by weight of hydrogen peroxide water, 1 to 5% by weight of organic acid, 0.2 to 5% by weight of phosphate, 0.2 to 5% by weight of nitrogen and deionized water relative to the total weight of the composition It provides an etching solution and a method of etching the copper single film or copper molybdenum film comprising a. Through such an etching solution and an etching method, low-resistance metal wiring is realized, and the etching speed is easily controlled, the tape profile is good, the linearity of the pattern is excellent, and even a large number of substrates are etched. Since the characteristics do not change, there is an effect that a semiconductor device having a large margin in the process can be manufactured.
    公开号:KR20030084397A
    申请号:KR1020020023091
    申请日:2002-04-26
    公开日:2003-11-01
    发明作者:김기섭；김성수；오금철
    申请人:동우 화인켐 주식회사；
    IPC主号:
    专利说明:

    Etching Solutions for Cu Monolayer or Cu Molybdenum Multilayers and Method of Preparing the Same}
    [9] The present invention relates to an etching solution used for the wet etching of a metal film in a semiconductor device and an etching method thereof, and more particularly to an etching solution for etching a copper molybdenum metal film in a semiconductor device.
    [10] The process of forming the metal wiring on the substrate in the semiconductor device is generally composed of a metal film forming process by sputtering or the like, a photoresist forming process in a selective region by photoresist coating, exposure and development, and an etching process. And washing processes before and after individual unit processes. The etching process refers to a process of leaving a metal film in a selective region using a photoresist as a mask, and typically, dry etching using plasma or wet etching using an etching solution is used.
    [11] In such semiconductor devices, the resistance of metallization has recently emerged as a major concern. Since resistance is a major factor in causing RC signal delay, especially for TFT LCD (thin film transistor liquid crystal display), it is important to increase panel size and high resolution.
    [12] Therefore, in order to realize the reduction of RC signal delay, which is essential for the large-sized TFT LCD, low-resistance material development is essential, and chromium (Cr specific resistance: 12.7 × 10-8 Ωm) and molybdenum (Mo resistivity), which have been mainly used in the past : 5 x 10 < -8 > m), aluminum (Al resistivity: 2.65 x 10 < -8 >
    [13] Under such a background, there is a high interest in a copper film, which is one of the new low resistance metal films. This is because the copper film is known to have an advantage that the resistance is significantly lower than that of the aluminum film or the chromium film, and there is no big problem in the environment. However, many difficulties have been found in the process of coating and patterning a photoresist of copper, and a problem of deterioration in adhesion with a silicon insulating film has been found.
    [14] On the other hand, the research on the multi-metal film to compensate for the shortcomings of the low-resistance copper single layer is in progress, and among them, the material in the limelight was a copper titanium film. The copper titanium double layer has a known etching solution and a number of new etching solutions have been published. However, due to the special chemical properties of the titanium film, the copper titanium double layer does not have an fluorine ion. When fluorine ions are included in the etching solution, the glass substrate and various silicon layers (passivation layer composed of a semiconductor layer and a silicon nitride film) are also etched and there are many elements that may be defective in the process. Thus, research on molybdenum films, which are relatively weaker than titanium, is being spread. Copper molybdenum film can make the film having similar or better properties than copper titanium film if the film thickness of copper and molybdenum is well controlled, and the etching solution used for etching does not need to contain fluorine ion, so this process is easy. Can proceed.
    [15] According to Patent Publication No. 1999-017836, it is disclosed that an etching solution of copper-containing multilayers is a mixture of phosphoric acid, nitric acid, and acetic acid, and according to Publication 2000-0032999, iron chloride ( III) It is disclosed that it is a mixed material of hexahydrate and hydrofluoric acid.
    [16] However, when the copper molybdenum film is etched using these etching solutions, the etching speed is too fast, which causes a problem in the process margin. The taper angle of the taper profile is 90 degrees or larger, so that The process becomes difficult, and the linearity of the pattern is also poor. The use of hydrofluoric acid also maintains the problem in copper titanium films where the glass substrate or silicon layer is etched.
    [17] Therefore, in order to solve the problems described above, the present invention can easily control the etching rate while simultaneously etching the copper and molybdenum films, the tape profile is good, and the tape angle is about 30 to 60 degrees, and the linearity of the pattern is good. The present invention provides an etching solution having a low CD loss and an etching solution which does not change the etching characteristics even after etching a large number of substrates.
    [18] In addition, as in the case of chromium and the like, by using a substance specified as an environmentally harmful substance by using copper, it provides a low-resistance metal wiring and an etching solution and an etching method for manufacturing an environmentally friendly semiconductor device.
    [1] 1A to 1F illustrate an etching process according to an embodiment of the present invention.
    [2] 2 is a view showing an example of an etching profile of a copper molybdenum double layer according to an embodiment of the present invention.
    [3] 3 is a view showing an example of an etching profile of a copper molybdenum film according to the prior art.
    [4] 4 is a view showing an example of an etching profile etched without the addition of phosphate in the etching solution according to the present invention.
    [5] 5 is a view showing an example of an etching profile etched without the addition of additive 1 containing nitrogen (N) in the etching solution according to the present invention.
    [6] * Description of the main parts of the drawings
    [7] 10 glass substrate 12 molybdenum film
    [8] 14 copper film 16 photoresist
    [19] As a means for realizing the object of the present invention, there is provided an etching solution of a copper single film or a copper molybdenum film containing hydrogen peroxide water, organic acids, phosphate salts, two types of additives including nitrogen, and deionized water. More specifically, two additives comprising 8 to 20% by weight of hydrogen peroxide water, 1 to 5% by weight of organic acid, 0.2 to 5% by weight of phosphate, 0.2 to 5% by weight of nitrogen and deionized water, based on the total weight of the composition It provides an etching solution of a copper single film or a copper molybdenum film comprising a.
    [20] The limitation of such a composition ratio is better understood through the following examples, for example, the above-described etching solution may include 8% by weight of hydrogen peroxide, 1% by weight of organic acid, 0.2% by weight of phosphate, and 0.2% by weight of nitrogen. Additive 1 comprising, and Additive 2 comprising 0.2% by weight of nitrogen, the remaining amount is diluted with deionized water.
    [21] The copper molybdenum film includes a double film of "molybdenum / copper film" having a copper film as a lower film and a molybdenum film as a top film, and a "copper / molybdenum film" having a molybdenum film as a lower film and a copper film as a top film. For example, the case of the multiple metal film more than the triple metal film which alternately laminates a molybdenum film, a copper film, and a molybdenum film is included. Accordingly, the copper molybdenum film means a plurality of multilayer films in which a copper film and a molybdenum film are alternately arranged. The copper molybdenum film may determine the structure of the multilayer by considering a material or adhesion of the film disposed below the copper molybdenum film or the film disposed above. The copper film and the molybdenum film are not limited in thickness to each other, and various combinations are possible. For example, the thickness of the copper film may be formed larger than the thickness of the molybdenum film, may be formed small, and more particularly may include a case formed only of the copper film.
    [22] Two kinds of additives including hydrogen peroxide, organic acid, phosphate, and nitrogen can be prepared by a conventionally known method, and preferably have a purity for semiconductor processing, and deionized water uses a semiconductor processing, preferably 18 Use water of MΩ / cm or more. In addition, other additives usually used may be used for the etching solution.
    [23] Hydrogen peroxide and organic acids are the main components for etching the copper film and molybdenum film. Preferably, they have purity for the semiconductor process, so that metal impurities of ppb level or less can be used. Organic acids are not particularly limited and various kinds are possible. , Preferably acetic acid, butanoic acid, citric acid, formic acid, glycolic acid, malonic acid, oxalic acid, pen Carbonic acid (pentanoic acid), propionic acid, tartaric acid and other water-soluble organic acids are most applicable. The role of this organic acid is to properly adjust the pH of the etching solution to create an environment for the copper and molybdenum films to be etched. If no organic acid is included and only hydrogen peroxide is present, the copper film is not etched. When the organic acid is added, a suitable pH is about 0.5 to 4.5.
    [24] Phosphate is a component that makes the tape profile good, and is not particularly limited and various kinds are possible. Preferably, hydrogen is alkali in phosphoric acid such as sodium dihydrogen phosphate and potassium dihydrogen phosphate. All salts substituted with one, two or three metals or alkaline earth metals are applicable. The role of the phosphate reduces the electrical effect between molybdenum and copper, preventing the undercut of the molybdenum film from being severely dug into the bottom of the copper film. If this phosphate is not present, the molybdenum film may be excessively etched into the lower part of the upper copper film and, in severe cases, may occur until the pattern is separated from the substrate. 4 is a view showing an etching profile when there is no phosphate in the etching solution of the present invention.
    [25] The additive 1 containing nitrogen controls the etching rate of the copper molybdenum film and reduces the CD loss of the pattern, thereby increasing the process margin. Various types are possible without particular limitation, and preferably, aminotetrazole, imidazole, indole, purine, pyrazole, pyridine, pyrimidine ( It is applicable if it is a series of pyrimidine, pyrrole, pyrrolidine, pyrroline and other water-soluble heterocyclic amine compounds. The role of this component is very important. If it is not added to the etching solution, it is difficult to control the etching rate and it is not possible to obtain the width of the desired pattern, so that there is a high probability of defects and the process margin is low, which causes problems in mass production. . 5 is a view showing an etching profile when there is no additive 1 containing nitrogen in the etching solution of the present invention.
    [26] Nitrogen-containing additive 2 has little to do with tape profile or etch rate, but it prevents the self-decomposition reaction of hydrogen peroxide that may occur during storage of etch solution and prevents the etching characteristics from changing when etching a large number of substrates. do. Various kinds can be used without particular limitation, preferably alanine series, aminobutyric acid series, glutamic acid series, glycine series, iminodiacetic acid series, Water-soluble compounds having amino and carboxylic acid groups, such as nitrilotriacetic acid series and sarcosine series, are applicable. The role of this additive is also important. In general, an etching solution using hydrogen peroxide solution decomposes hydrogen peroxide during storage, which does not have a long storage period, and has a risk of explosion of the container. However, when this additive is included, the decomposition rate of hydrogen peroxide water is reduced by nearly 10 times, which is advantageous for securing storage period and stability. In addition, by inactivating copper and molybdenum ions which are inevitably generated during copper molybdenum film etching through a chelation reaction, it prevents additional reactions that may be caused by the ions, so that the etching characteristics do not change even when etching a large number of substrates. Does not provide advantages. Particularly, in the case of a copper film, when a large amount of copper ions remain in the etching solution, a passivation film may be formed to oxidize black and then no longer etched. However, when this additive is added, this phenomenon may be prevented.
    [27] Another means for realizing the object of the present invention is to use a first step of depositing a copper molybdenum film on a substrate, a second step of selectively leaving a photoresist on a copper molybdenum film, and using an etching solution of the above-described composition range Provided is an etching method of a copper molybdenum film including a third step of etching the copper molybdenum film.
    [28] Preferably, a semiconductor structure is formed between the substrate and the copper film or between the substrate and the molybdenum film. Such semiconductor structures include semiconductor structures for display devices such as LCDs and PDPs, such as dielectric films by chemical vapor deposition, conductive materials by methods such as sputtering, and semiconductor films such as silicon films such as amorphous or polycrystalline materials. It means a structure manufactured by a photo process, an etching process, etc. including one or more films.
    [29] Preferably, the above-described copper molybdenum film can form source / drain wirings that constitute the gate wirings and data lines of the TFT-LCD. Since the source / drain wiring of the TFT-LCD is a wiring whose resistance is a problem in particular, it is possible to use a copper molybdenum film and easily etch it with the etching solution according to the present invention to enable the enlargement of the TFT LCD.
    [30] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
    [31] However, embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art. Accordingly, the film thickness and the like in the drawings are exaggerated to emphasize the clear explanation. Also, if a film is described as "on" another film or substrate, the film may be present in direct contact with the other film or substrate, or a third film may be interposed therebetween.
    [32] Example 1
    [33] H 2 O 2 / organic acid / phosphate / additive 1 / additive 2 = 12/2 / 0.5 / 0.5 / 0.5
    [34] 1A to 1F, an embodiment of an etching process according to the present invention will be described. The substrate 10 described above continuously deposits the molybdenum film 12 and the copper film 14 on the glass substrate by chemical vapor deposition commonly known to those skilled in the art, and the thickness of the molybdenum film is approximately 50 to 200 mm 3 and the copper film is approximately 1500. It consists of -2000 microseconds (FIG. 1A). A display device structure (not shown) may be added between the glass substrate 10 and the molybdenum film 12. The structure for a display device is formed by forming a pattern on various oxide films such as silicon oxide film and silicon nitride film, or semiconductor films such as amorphous silicon and polysilicon, or conductive layers such as doped amorphous doped polysilicon and various metal films. It means a structure formed by overlapping at least two. In addition, on the substrate 10, the copper film 14, the molybdenum film 12, and the like, a conventional cleaning process as known to those skilled in the art is performed.
    [35] Next, in order to form a copper molybdenum double film at an optional site, a photoresist is applied (FIG. 1B), selectively exposed using a mask and partially removed by the developer (FIG. 1C). In this case, the photoresist may be a cathode or an anode reactant, and in the case of the anode photoresist, the exposed portion is developed, and the cathode photoresist is developed in that the unexposed portion is developed. In addition, a process such as ashing, heat treatment, and the like, which are commonly performed, may be added to the process.
    [36] Then, an etching solution consisting of 12% by weight of hydrogen peroxide, 2% by weight of organic acid, 0.5% by weight of phosphate, 0.5% by weight of additive 1 containing nitrogen, 0.5% by weight of additive 2 containing nitrogen and 84.5% by weight of deionized water. Copper molybdenum double layer etching process. 1D shows a situation in which the copper film is first etched. Subsequently, the molybdenum film is etched by the same etching solution (FIG. 1E). Fig. 1E is a diagram showing an exaggerated actual film thickness and the like. The etching process of such a copper molybdenum double layer may be carried out according to a method well known in the art, may be immersed, spray, and the like, preferably using a spray method. In the etching process, the temperature of the etching solution is about 30 ° C, and the optimum temperature can be changed as necessary due to other process conditions and other factors. The etching time may vary depending on the etching temperature, but usually proceeds about 30 to 180 seconds. Finally, the photoresist is removed from the front to form the shape shown in FIG. 1F. In the drawings, it is shown with a predetermined tape angle for ease of understanding.
    [37] The profile of the copper molybdenum double layer etched by this process was examined using a cross-sectional SEM (Model S-4200, manufactured by Hitachi). The measured etching rate is about 70 kW / sec for the copper film, about 7 kW / sec for the molybdenum film, and FIG. 2 shows the etching profile of the copper molybdenum double film described above. Here, the excellent tape profile of the copper molybdenum double film, the linearity of a pattern, and the moderate etching speed are shown.
    [38] For comparison, an etching picture of the copper molybdenum double layer according to the prior art is shown in FIG. 3. Since various process conditions may vary, it may be difficult to directly compare the case of Example 1, but an indirect comparison may be made.
    [39] As shown in FIG. 2, it can be seen that the etching profile of Example 1 has a relatively excellent characteristic.
    [40] On the other hand, as a result, it can be seen that even when the above-described etching solution is applied to the copper single layer, a predetermined effect can be assisted.
    [41] Example 2
    [42] Hydrogen Peroxide / Organic Acid / Phosphate / Additive 1 / Additive 2 = 8/1 / 0.2 / 0.2 / 0.2
    [43] In a similar manner as in Example 1, only the composition ratio of the etching solution was changed to perform the cleaning process in the same manner. Detailed process progress is not described again for the sake of brevity. Table 1 shows the composition ratio of Examples 2 to 13 and the etching rate accordingly.
    [44]
    [45] As shown in Table 1, it can be seen that the etching rate is determined according to the amount of the additive 1 including hydrogen peroxide and nitrogen.
    [46] Hereinafter, the characteristics of the copper molybdenum double film etching solution prepared outside the preferred composition range of Examples 1 to 13 will be described.
    [47] First, when the hydrogen peroxide number is less than 8% by weight, the etching rate is too slow, so the process time is long, and when the hydrogen peroxide number is more than 20% by weight, the etching rate is faster, in particular, the copper film has a relatively faster etching rate, so the molybdenum film and the severe step Appearance can lead to problems with the electrical properties of the pattern and subsequent processing. Therefore, the composition range of the hydrogen peroxide water is preferably 8 to 20% by weight.
    [48] Secondly, the organic acid has a suitable pH (pH 0.5-4.5) to allow the copper and molybdenum to be etched into the environment of the etching solution. If it is less than 1% by weight, it is difficult to maintain a pH of about 0.5 to 4.5 because of insufficient influence to adjust the pH, and if it is more than 5% by weight, it will reach a critical point of the content that does not affect even more increase of the organic acid content. The composition range is preferably 1 to 5% by weight.
    [49] Third, the phosphate reduces the electrical effect between copper and molybdenum, thereby preventing the molybdenum film from digging into the lower portion of the copper film (undercut phenomenon). Therefore, if the amount is small, the undercut phenomenon occurs. If the phosphate is less than 0.2% by weight, severe undercut phenomenon occurs and the effect of preventing the undercut phenomenon at about 5% by weight is sufficiently exerted, so there is no need to add more. (Critical point) Therefore, the preferable composition range is 0.2 to 5% by weight.
    [50] Fourth, additive 1 containing nitrogen plays a role in controlling the etching rate and reducing the CD loss of the pattern, which determines the margin in the process and maintains a constant electrical signal of the pattern. It is an important factor. In particular, in the case of TFT-LCD using copper film wiring, most of the screens are made for the purpose of large screen and high brightness, keeping electrical signals constant is one of the important processes. In addition, the larger the CD-ROS, the more likely the linearity of the pattern is lowered, and defects tend to appear in the subsequent process. If the additive 1 is less than 0.2 wt%, the cisidose is too large because more than 5% of the pattern is generated, and if it is more than 5 wt%, the etching rate is too slow, so that the process time is long, and the tape profile tends to be poor. Therefore, the composition range is preferably 0.2 to 5% by weight.
    [51] Fifth, the additive 2 containing nitrogen increases the storage time of the etching solution and allows the etching characteristics to remain constant even after etching a large number of substrates. In general, hydrogen peroxide water is an unstable substance, so etching solutions containing the same have a long storage period. In the case of a copper film, a passivation phenomenon occurs that is easily oxidized and turned black in the air as well as in a solution. This passivation phenomenon is difficult to etch after the passivation film is formed. This passivation phenomenon is particularly noticeable when excess activated copper ions are present in the solution. Additive 2 increases the shelf life of the etching solution, while chelation of activated copper ions in the etching solution prevents the formation of a passivation film. If the content of additive 2 is less than 0.2% by weight, a passivation film is formed after 500 sheets, so that a sufficient process margin is difficult, and when the content of the additive 2 exceeds 5% by weight, the critical point is no longer affected, while the solubility is not so good that the temperature is lowered. It is easily precipitated and falls into crystals. Therefore, the preferred composition range is about 0.2 to 5% by weight.
    [52] In another embodiment of the present invention, the display device structure of the above-described embodiments 1 to 13 is a structure including a TFT LCD gate wiring, an insulating film, a semiconductor layer, and the like, and the copper molybdenum film is a source / drain wiring.
    [53] After forming a buffer layer made of a transparent insulating material on the glass substrate or performing a cleaning process without forming such a buffer layer, a first conductive layer corresponding to the gate electrode and the wiring is formed, and then the gate insulating film, Therefore, the insulating film which forms a storage capacitor is formed.
    [54] A semiconductor layer, such as amorphous silicon (a-Si) or polysilicon (poly-si), which becomes an active region on the insulating film is formed to pattern a predetermined region to form a channel region of the transistor element. There are a source / drain electrode ohmicly connected to the semiconductor layer forming the channel region, and a second conductive layer forming the data wiring. Then, an insulating layer is usually formed on the second conductive layer.
    [55] In such a structure, a copper molybdenum double film is usually used as the second conductive layer which requires a lower resistance. In addition, the above-described etching solution and the etching method may be applied to pattern the copper molybdenum multilayer. However, the present invention is not necessarily limited thereto, and it is obvious that the present invention can be used for the above-described first conductive layer (gate wiring).
    [56] In addition, in the present embodiment, the copper molybdenum double layer is mainly referred to, but in the case of triple layer or more consisting of copper and molybdenum, the etching process may be performed with the above-described etching solution, and the copper layer or the molybdenum layer may be formed by chemical vapor deposition. It is commonly manufactureable in the art.
    [57] In particular, even in the case of a copper film having no molybdenum film among the copper molybdenum films, a predetermined effect can be obtained by such an etching solution and an etching method.
    [58] While specific embodiments of the invention have been described and illustrated above, it will be apparent that the invention may be embodied in various modifications by those skilled in the art.
    [59] Accordingly, various modifications, equivalents, and the like may be made without departing from the spirit or scope of the claims of the present invention, and thus, such things should be regarded as within the claims of the present invention.
    [60] As described above, by using the etching solution and the etching method according to the present invention, the etching speed can be freely controlled, the tape profile is good, the tape angle is maintained at about 30 to 60 degrees, and the linearity of the pattern is excellent. Even after etching a large number of substrates, the etching characteristics are maintained similar to the initial stage, and the storage period of the etching solution is also long. Therefore, when the etching solution is used, a large-screen, high-brightness circuit can be realized by using a copper wire having low resistance, and an environmentally friendly semiconductor device can be manufactured.
    权利要求:
    Claims (12)
    [1" claim-type="Currently amended] 8-20% by weight of hydrogen peroxide solution, based on the total weight of the composition;
    1 to 5% by weight of organic acid, based on the total weight of the composition;
    0.2 to 5% by weight of phosphate relative to the total weight of the composition;
    Additive 1 comprising 0.2 to 5% by weight of nitrogen relative to the total weight of the composition;
    Additive 2 comprising from 0.2 to 5% by weight of nitrogen relative to the total weight of the composition; And
    An etching solution of a copper molybdenum film comprising deionized water such that the total weight of the total composition is 100% by weight.
    [2" claim-type="Currently amended] According to claim 1, wherein 1 to 5% by weight of the organic acid based on the total weight of the total composition is acetic acid, butanoic acid, citric acid, formic acid, glycolic acid Etching solution of copper molybdenum film, characterized in that selected from malonic acid (oxalic acid), oxalic acid (pentalic acid), pentanoic acid (propanoic acid), propionic acid (tartaric acid) and other water-soluble organic acids.
    [3" claim-type="Currently amended] According to claim 1, 0.2 to 5% by weight of the phosphate relative to the total weight of the composition of the hydrogen in the phosphoric acid, such as sodium dihydrogen phosphate, potassium dihydrogen phosphate (potassium dihydrogen phosphate) to the alkali metal or alkaline earth metal An etching solution of a copper molybdenum film, characterized in that selected from one, two, or three substituted salts.
    [4" claim-type="Currently amended] The method of claim 1, wherein the additive 1 comprising 0.2 to 5% by weight of nitrogen based on the total weight of the total composition is aminotetrazole, imidazole, indole, purine, pyrazole ( copper selected from pyrazole, pyridine, pyrimidine, pyrrole, pyrrolidine, pyrroline, and other water soluble heterocyclic amine compounds Etch solution of molybdenum membrane
    [5" claim-type="Currently amended] The additive 2 according to claim 1, which comprises 0.2 to 5% by weight of nitrogen based on the total weight of the composition, has an alanine series, an aminobutyric acid series, a glutamic acid series, and a glycine series. , An etching solution of a copper molybdenum film, characterized in that it is selected from water-soluble compounds having an amino group and a carboxylic acid group such as iminodiacetic acid series, nitrilotriacetic acid series, and sarcosine series .
    [6" claim-type="Currently amended] The copper molybdenum film etching solution according to claim 1, wherein the copper molybdenum film is a double film in which a copper film is formed on the molybdenum film.
    [7" claim-type="Currently amended] The copper molybdenum film etching solution of claim 6, wherein the copper film has a thickness greater than that of the molybdenum film.
    [8" claim-type="Currently amended] Depositing a copper molybdenum film on the substrate;
    A second step of selectively leaving a photoresist on the copper molybdenum film; And etching the copper molybdenum film using the etching solution according to claim 1.
    [9" claim-type="Currently amended] 10. The method of claim 8, wherein the copper molybdenum film is a double film in which a copper film is formed on the molybdenum film.
    [10" claim-type="Currently amended] 10. The method of claim 9, wherein the thickness of the copper film is larger than the thickness of the molybdenum film.
    [11" claim-type="Currently amended] 10. The method of claim 8, wherein the substrate is a glass substrate for a TFT LCD.
    [12" claim-type="Currently amended] 10. The method of claim 8, wherein the copper film is a source / drain wiring.
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    同族专利:
    公开号 | 公开日
    KR100459271B1|2004-12-03|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-04-26|Application filed by 동우 화인켐 주식회사
    2002-04-26|Priority to KR10-2002-0023091A
    2003-11-01|Publication of KR20030084397A
    2004-12-03|Application granted
    2004-12-03|Publication of KR100459271B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR10-2002-0023091A|KR100459271B1|2002-04-26|2002-04-26|Etching Solutions for Cu Monolayer or Cu Molybdenum Multilayers and Method of Preparing the Same|
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