Align key for manufacturing semiconductor device

专利摘要:
PURPOSE: An alignment key for fabricating a semiconductor device is provided to precisely analyze the center position of a trench by forming the first alignment key composed of a plurality of trench-type fine patterns so that a thin film like a tungsten layer is uniformly formed in the trench of the first alignment key by a predetermined thickness. CONSTITUTION: The alignment key for fabricating the semiconductor device is composed of a plurality of the trench-type fine patterns that are separated from one another. The alignment key is of a bar type, disposed as a quadrangular shape. A thin film is formed on the alignment key and a photoresist pattern of a box type is formed inside the alignment key disposed as a quadrangular shape.
公开号:KR20030036955A
申请号:KR1020010067905
申请日:2001-11-01
公开日:2003-05-12
发明作者:한득수
申请人:삼성전자주식회사；
IPC主号:

专利说明:

Align key for manufacturing semiconductor device
[11] The present invention relates to an alignment key for manufacturing a semiconductor device, and more particularly, after the thin film forming process and the photoresist pattern forming process are sequentially performed, a misalignment of the photoresist pattern forming process is detected. A sorting key for manufacturing a semiconductor device can be provided.
[12] In general, a semiconductor device includes a thin film forming process of laminating a plurality of layers of various materials such as a metal film, an oxide film, and a nitride film on a wafer on which a series of semiconductor manufacturing processes are performed, and photolithography of the layers. A patterning process of forming a pattern by a process is essentially performed.
[13] In addition to the above pattern, an align key is formed on the scribe line to confirm the correct alignment of the previous process and the current process.
[14] 1 is a plan view of a wafer for manufacturing a general semiconductor device.
[15] Referring to FIG. 1, a plurality of cell regions 12 are provided on a wafer 10, and the cell regions 12 are divided by scribe lines 14.
[16] In this case, a semiconductor chip is implemented on the cell region 12, and an alignment key 16 is provided on the scribe line 14 to confirm whether the pre-process and the current process are raised.
[17] In this case, the cell region 12 and the scribe line 14 are separated from each other by performing a process such as a local oxidation of silicon (LOCOS).
[18] FIG. 2 is a plan view illustrating a conventional alignment key for manufacturing a semiconductor device in a process of forming a tungsten pattern, and FIG. 3 is a cross-sectional view taken along line AA ′ of FIG. 2.
[19] 2 and 3, a first alignment key 20 having a trench shape having a width of about 2 μm is formed on the lower layer 26 of the scribe line.
[20] A tungsten film 24 having a flattened surface by tungsten coating and CMP (Chemical Mechanical Polishing) is provided on the first alignment key 20.
[21] A second alignment key 22, which is used as an etching mask for etching the tungsten film 24 and is formed of a photoresist pattern having a width of about 10 mu m, is also provided on the scribe line.
[22] Therefore, the operator forms the second alignment key 22 formed of the photoresist pattern, and then measures the distance between the center of one trench of the first alignment key 20 and the center of the second alignment key 22 made of the photoresist pattern. By measuring, it is confirmed whether or not a misalignment has occurred.
[23] In this case, the center value of the trench on one side of the first alignment key 20 is a sine wave generated by scanning the surface of the wafer 10 on which the first alignment key 20 and the second alignment key 22 are formed. It proceeds by detecting the center of the trench of the first alignment key 20 to which the tungsten film 24 is applied using a wave.
[24] However, the tungsten film formed inside the trench of the trench type first alignment key for manufacturing a semiconductor device is asymmetrical due to the different thickness of the tungsten film applied to one side and the other side of the trench due to the depth of the trench.
[25] Therefore, the sinusoidal wave generated by the scanning of the wafer surface could not accurately analyze the trench center value of the first alignment key by the tungsten film asymmetrically applied inside the trench.
[26] Therefore, the current process, that is, the process of forming the photoresist pattern did not have a misalignment, but there was a problem that the misalignment occurred.
[27] An object of the present invention is to asymmetrically at one side and the other side of the trench due to the depth of the trench inside the alignment key, and to prevent the formation of a thin film such as tungsten film to accurately analyze the occurrence of misalignment. It is to provide an alignment key for manufacturing a semiconductor device.
[1] 1 is a plan view of a wafer for manufacturing a general semiconductor device.
[2] 2 is a plan view illustrating a conventional alignment key for manufacturing a semiconductor device.
[3] 3 is a cross-sectional view taken along the line AA ′ of FIG. 2.
[4] 4 is a plan view illustrating an alignment key for manufacturing a semiconductor device according to an embodiment of the present invention.
[5] FIG. 5 is a cross-sectional view taken along the line BB ′ of FIG. 4.
[6] ※ Explanation of codes for main parts of drawing
[7] 10 wafer 12 cell area
[8] 14: scribe line 16: alignment key
[9] 20, 30: first alignment key 22, 32: second alignment key
[10] 24, 34: tungsten film 26, 36: lower film
[28] Alignment key for manufacturing a semiconductor device according to the present invention for achieving the above object is characterized in that consisting of a plurality of trench-type fine patterns divided from each other.
[29] Here, the alignment key may be formed in a bar shape, the rod-shaped alignment key may be formed in a rectangular shape.
[30] A thin film may be formed on the alignment key, and another alignment key formed of a box-shaped photoresist pattern may be further provided inside the alignment key disposed in the rectangular shape.
[31] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
[32] 4 is a plan view illustrating an alignment key for manufacturing a semiconductor device in a process of forming a tungsten pattern according to an embodiment of the present invention, and FIG. 5 is a cross-sectional view taken along line BB ′ of FIG. 4.
[33] Alignment key for manufacturing a semiconductor device according to the present invention, as shown in Figures 4 and 5 consists of two trench-type micropatterns having a width of about 0.4 ㎛ with a separation distance of about 0.4 ㎛, one side outermost trench The first alignment key 30 having a width of about 2 μm is formed on the lower layer 36 of the scribe line as the distance between the outer inner surface of the outermost surface and the outer inner surface of the other outermost trench.
[34] That is, the first alignment key 30 according to the present invention is characterized in that the trench is divided by forming a plurality of fine patterns in the trench having a width of about 2 μm.
[35] At this time, the first alignment key 30 is formed in a bar shape, the rod-shaped first alignment key 30 is formed in a rectangular shape.
[36] A tungsten film 34 having a flattened surface by tungsten coating and CMP (Chemical Mechanical Polishing) is provided on the first alignment key 30.
[37] In addition, the tungsten film 34 of the scribe line is used as an etching mask for etching the tungsten film 34, and a second alignment key 32 formed of a box-shaped photoresist pattern having a width of about 10 μm. It is provided on the top.
[38] In this case, since the trenches of the first alignment key 30 are divided into a plurality of trenches, the tungsten film 34 formed in the trench of the first alignment key 30 has a uniform thickness.
[39] Therefore, after the operator forms the second alignment key 32 formed of the photoresist pattern, the distance between the center of one trench of the first alignment key 30 and the center of the second alignment key 32 made of the photoresist pattern is formed. By measuring, it is checked whether or not misalignment has occurred in the photoresist pattern formation process.
[40] At this time, the distance measurement of the center of the trench on one side of the first alignment key 30 and the second alignment key 32 formed of the photoresist pattern, the wafer on which the first alignment key 30 and the second alignment key 32 are formed Proceed using a sine wave generated by scanning the surface.
[41] In addition, since the tungsten film 34 in the plurality of trenches of the first alignment key 30 according to the present invention of the distance measuring process is formed to have a uniform thickness in the trench, the sine wave generated by scanning the wafer surface is It generates an accurate sine wave corresponding to the center value of each trench.
[42] Therefore, by accurately measuring the misalignment by accurately measuring the distance between the center of one of the trenches and the current process, that is, the center of the photoresist pattern used as the second alignment key 32, the error analysis of the misalignment is performed. This does not happen.
[43] According to the present invention, by providing a first alignment key made of a plurality of trench-type micropatterns so that a thin film such as a tungsten film can be formed in a uniform thickness inside the trench of the first alignment key, the trench by scanning the wafer surface Can accurately analyze the central position of
[44] Therefore, there is an effect that can accurately analyze the presence or absence of misalignment in the photoresist pattern forming step after the tungsten film forming step.
[45] Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and such modifications and modifications belong to the appended claims.

权利要求:
Claims (3)
[1" claim-type="Currently amended] An alignment key for manufacturing a semiconductor device, characterized in that it comprises a plurality of trench type fine patterns divided from each other.
[2" claim-type="Currently amended] The alignment key for manufacturing a semiconductor device according to claim 1, wherein the alignment key is formed in a rod shape, and the rod-shaped alignment key is formed in a rectangular shape.
[3" claim-type="Currently amended] The alignment key of claim 2, wherein a thin film is formed on the alignment key, and another alignment key formed of a box-shaped photoresist pattern is further provided inside the alignment key arranged in the rectangular shape. .

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2001-11-01|Application filed by 삼성전자주식회사

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2001-11-01|Priority to KR1020010067905A

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2003-05-12|Publication of KR20030036955A

优先权:

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申请号 | 申请日 | 专利标题

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KR1020010067905A|KR20030036955A|2001-11-01|2001-11-01|Align key for manufacturing semiconductor device|