• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention provides an electrode-embedded susceptor and a method of manufacturing the same, which do not leak corrosive gas, plasma, or the like into the susceptor body, have excellent corrosion resistance and plasma resistance, and improve insulation under high temperature. The electrode-embedded susceptor 21 of the present invention is formed between the placement plate 22 and the support plate 23 made of aluminum nitride-based sintered body, and the placement plate 22 and the support plate 23 to form an aluminum nitride-tungsten composite sintered body. Or an internal electrode 24 made of aluminum nitride-molybdenum composite sintered body, and a power supply terminal 26, 26 installed in the support plate 23 and electrically connected to the internal electrode 24. Both sides of the) is characterized by being covered with an insulating material 30 made of AIN particles.
    公开号:KR20030032850A
    申请号:KR1020020062082
    申请日:2002-10-11
    公开日:2003-04-26
    发明作者:오츠카다케시；엔도가즈노리；고사카이마모루
    申请人:스미토모 오사카 세멘토 가부시키가이샤；
    IPC主号:
    专利说明:

    Susceptor with built-in electrode and manufacturing method therefor}
    [24] The present invention relates to a built-in electrode susceptor (susceptor) and a method for manufacturing the same, in particular an electrode-embedded susceptor that can be excellent in corrosion resistance, plasma resistance and prevent the leakage of current, and a high product ratio It relates to a method for manufacturing an electrode-embedded susceptor that can be manufactured at low cost.
    [25] Recently, in the manufacturing process of semiconductor devices such as IC, LSI, VLSI, etc., the manufacturing process of display devices such as liquid crystal display (LCD) and plasma display (PDP), as well as the assembly process of hybrid IC, etc. Since the wafers are uniformly carried out for each wafer or substrate, sheet-fed processing for processing sheet-like samples such as semiconductor wafers, liquid crystal glass substrates, and printed substrates one by one is progressing.
    [26] In this sheeting process, in order to store a plate-shaped sample one by one in a process chamber, this plate-shaped sample is mounted in the sample stand (shelf) called a susceptor, and predetermined process is performed.
    [27] The susceptor must be able to withstand use in plasma and also at high temperatures, so it must be excellent in plasma resistance and high in thermal conductivity.
    [28] As such a susceptor, a susceptor made of an aluminum nitride-based sintered body having excellent plasma resistance and thermal conductivity is used.
    [29] As one of such susceptors, an electrode for an electrostatic chuck for generating a charge inside a susceptor body having a mounting surface for mounting a plate-shaped sample to fix the plate-shaped sample with electrostatic adsorption force, and conducting heat generation to produce a plate-shaped sample. There is an electrode-embedded susceptor in which internal electrodes such as a heater electrode for heating and a plasma generating electrode for generating plasma by energizing high frequency electric power are disposed.
    [30] FIG. 5 is a cross-sectional view showing an example of an electrode-embedded susceptor made of a conventional aluminum nitride-based sintered body. The electrode-embedded susceptor 1 includes a mounting plate 2 for placing a plate-shaped sample and the mounting plate 2. Support plate (3), the mounting plate (2) and the support plate (3) are integrally bonded to each other, and an internal electrode (4) made of a conductive binder layer, and the support plate is in contact with the internal electrode (4). It consists of the terminals 5 and 5 for power supply which are embedded in (3) and supply electric current in the internal electrode 4. As shown in FIG.
    [31] The placement plate 2 is composed of a plate-shaped body made of an insulating and dielectric aluminum nitride sintered body, and the supporting plate 3 is made of a plate-shaped body made of an insulating aluminum nitride-based sintered body, and the conductive binder layer serving as the internal electrode 4 is an organic material. Or metal.
    [32] In the electrode-embedded susceptor 1, as described above, the mounting plate 2 and the supporting plate 3 are joined by a conductive bonding layer made of a different material, that is, the internal electrode 4, and thus, the mounting plate 2 and the supporting plate are as described above. The bonding of (3) is likely to be insufficient, and corrosive gas or plasma may invade at these interfaces and the internal electrode 4 may discolor in glass or plasma, or the bonding interface between the base plate 2 and the support plate 3 may be broken. In addition, there was a problem of insufficient corrosion resistance and plasma resistance as a susceptor.
    [33] Therefore, in the conventional electrode-embedded susceptor 1, the bonding plate 2 and the supporting plate 3 must be secured so that no gas, plasma or the like enters the joint.
    [34] FIG. 6 is an exploded cross-sectional view showing each component of the improved electrode-embedded susceptor 11 improved from this point, and FIG. 7 is a cross-sectional view showing the overall shape of this improved electrode-embedded susceptor 11; The ring-shaped flange 12a is provided in the side circumference of the lower surface of the mounting plate 12 which consists of a sintered compact, and it has a structure in which the circular recessed part 12b was formed in the lower surface side of the mounting plate 12. As shown in FIG.
    [35] An improved electrode-embedded susceptor 11 is inserted into the recess 12b by inserting an internal electrode 13 made of a conductive bonding layer and a support plate 15 made of an aluminum nitride sintered body in which a terminal 14 for supplying power is embedded. ) Can be obtained.
    [36] By the way, in the improved electrode-embedded susceptor 11, the mounting plate 12 is processed into the above shape and the internal electrode 13 and the supporting plate 15 are placed in the recess 12b of the mounting plate 12. It has to be designed in a shape that fits tightly, and thus, the manufacturing process of the electrode-embedded susceptor 11 is complicated, resulting in an increase in manufacturing cost.
    [37] In addition, in these electrode-embedded susceptors 1 and 11, there is a common problem that the insulation property at high temperature is lowered, and the volume specific resistance value is, for example, about 106
    [38] The present invention is to solve the above problems, there is no risk of corrosive gas or plasma infiltrating into the susceptor body made of aluminum nitride-based sintered body as a result of excellent corrosion resistance and plasma resistance and improved insulation at high temperatures It is an object of the present invention to provide a method for manufacturing an electrode-embedded susceptor in which current does not leak, and an electrode-embedded susceptor that can be obtained at a high product rate at low cost and easily.
    [1] 1 is a cross-sectional view showing an electrode-embedded susceptor according to one embodiment of the present invention,
    [2] 2 is an enlarged cross-sectional view of a main part of a region A of FIG. 1,
    [3] 3A to 3C are process charts illustrating a method for manufacturing an electrode-embedded susceptor according to one embodiment of the present invention;
    [4] 4 is an explanatory diagram showing a method for measuring a volume specific resistance value of the mounting plate of the electrode-embedded susceptor.
    [5] 5 is a cross-sectional view showing an example of a conventional electrode built-in susceptor,
    [6] 6 is an exploded cross-sectional view showing each component of a conventional improved electrode built-in susceptor,
    [7] 7 is a cross-sectional view showing the overall shape of a conventional improved electrode-embedded susceptor.
    [8] <Description of the symbols for the main parts of the drawings>
    [9] 1 ... built-in electrode susceptor 2 ... mounting plate
    [10] 3 ... support plate 4 ... internal electrode
    [11] 5 ... terminal for power supply 11 ... built-in electrode susceptor
    [12] 12 ... mounting plate 12a ... flange
    [13] 12b ... recess 13 ... internal electrode
    [14] 14 ... Terminal for power supply 15 ... Support plate
    [15] 21 ... built-in electrode susceptor 22 ... mounting plate
    [16] 22a ... mounting surface 23 ... support plate
    [17] 24 ... internal electrode 25 ... fixing hole
    [18] 26 ... terminal for power supply 27 ... insulation layer
    [19] 28 ... susceptor body 30 ... insulating material
    [20] 31 ... aluminum nitride (AIN) particles 32 ... sintering aid
    [21] 41 ... conductive layer 42 ... insulating layer
    [22] 51 ... Si wafer 52 ... DC power
    [23] 53 ... Ammeter
    [39] The present inventors have diligently investigated that in an electrode-embedded susceptor having a susceptor body made of an aluminum nitride-based sintered body and an internal electrode made of an aluminum nitride-tungsten composite sintered body or an aluminum nitride-molybdenum composite sintered body embedded in the susceptor body. In the aluminum nitride group sintered body and aluminum nitride-tungsten composite sintered body or aluminum nitride-molybdenum composite sintered body or aluminum nitride group powder which comprise these, and special heat treatment or reduction is carried out to aluminum nitride-tungsten composite material or aluminum nitride-molybdenum composite material. The present invention was completed by discovering that the current was not leaked and the bonding between the aluminum nitride-based sintered bodies was dense and that there was no risk of corrosive gas or plasma invading the joint.
    [40] That is, the electrode-embedded susceptor according to claim 1 of the present invention includes a susceptor main body having a circumferential surface on which a plate-shaped sample is placed, made of an aluminum nitride-based sintered body, and embedded in the susceptor main body, or an aluminum nitride-tungsten composite sintered body or And an internal electrode made of an aluminum nitride-molybdenum composite sintered body, and a terminal for supplying electricity provided to the susceptor body to supply electricity to the internal electrode, wherein the internal electrode is coated with an insulating material.
    [41] It is preferable that the said insulating substance is made into an aluminum nitride sintered compact.
    [42] The built-in susceptor has an internal electrode composed of aluminum nitride-tungsten composite sinter or aluminum nitride-molybdenum composite sintered body in the susceptor body, so there is no risk of discoloration of corrosive gas or plasma. The plasma property is excellent. In addition, since the internal electrode is covered with an insulating material, current does not leak even at high temperatures.
    [43] The susceptor body includes a mounting plate having a circumferential surface on which a plate-shaped sample is placed and made of aluminum nitride gas sintered body, and a supporting plate made of aluminum nitride-based sintered body to support the mounting plate. It is good also as a structure which the said board was joined and integrated so that it may support through an electrode.
    [44] Since the electrode-embedded susceptor has no risk of invading corrosive gas or plasma from the joining surface of the mounting plate and the supporting plate, these joining interfaces are not destroyed.
    [45] In the method for producing an electrode-embedded susceptor according to claim 4, a mounting plate on which a plate-shaped sample is placed by an aluminum nitride-based sintered body and a supporting plate for supporting the mounting plate are produced, and then an aluminum nitride-tungsten composite material is formed on the supporting plate. Or after forming a conductive material layer comprising an aluminum nitride-molybdenum composite material, overlapping the supporting plate and the mounting plate with the conductive material layer therebetween and heat-treating them at a temperature of 1600 ° C. or higher, and thereafter at least 1500 ° C. at the heat treatment temperature. By slowly cooling at a cooling rate of 5 ° C./min or less, or maintaining a temperature of 1500 ° C. to 1800 ° C., an internal electrode formed by firing the conductive material layer between the mounting plate and the support plate is formed and bonded to each other. It is characterized by the integration.
    [46] In the manufacturing method of the electrode-embedded susceptor, an electrode-embedded susceptor having excellent corrosion resistance and plasma resistance and no current leakage under high temperature can be easily obtained by integrating and sintering a mounting plate and a support plate made of a sintered body. .
    [47] In addition, since the mounting plate and the supporting plate can be made into a simple plate-shaped body, it is not necessary to make them into a complicated shape, so that the electrode-embedded susceptor can be manufactured at low cost with a high product ratio.
    [48] Moreover, since it is manufactured using the mounting plate and support plate which are already made of a sintered compact, the electrode built-in susceptor which is excellent in dimensional precision can be manufactured easily.
    [49] When a fixing hole is formed in the support plate to insert a terminal for feeding into the fixing hole, and an internal electrode is formed and wired on the upper end of the terminal for feeding, the terminal for feeding and the internal electrode are in good contact with each other to ensure electrical stability. Can be connected.
    [50] In the method for manufacturing an electrode-embedded susceptor according to claim 5, the support plate is made of a green body for a mounting plate in which a plate-shaped sample is placed in a slurry containing aluminum nitride group powder, and a green body for a supporting plate for supporting the mounting plate. After forming a conductive material layer including an aluminum nitride-tungsten composite material or an aluminum-molybdenum composite material on the green body, the green body for the support plate and the green body for the mounting plate are sandwiched between the conductive material layers, and they are formed at a temperature of 1600 ° C. or higher. After firing, the internal electrode formed by sintering the conductive material layer between the mounting plate and the support plate by gradually cooling at a cooling rate of 5 ° C./min or less at a cooling rate of at least 1500 ° C. or at a temperature of 1500 ° C. to 1800 ° C. At the same time, they are formed by joining and integrating them.
    [51] The manufacturing method of the electrode-embedded susceptor is to sinter the integrated plate body and the support plate green body, to integrate and heat-treat the joints, and to perform heat treatment. Therefore, the electrode-embedded susceptor has excellent corrosion resistance and plasma resistance and does not leak current at high temperatures. Can be easily obtained.
    [52] In addition, since the mounting plate and the support plate can be made into a simple plate-shaped body, it is not necessary to make them in a complicated form, so that the electrode-embedded susceptor can be manufactured at low cost with a high product ratio.
    [53] In addition, since it can be produced by one heat treatment (firing), the manufacturing cost of the electrode-embedded susceptor can be reduced.
    [54] When the fixing hole is formed in the green body for the support plate, and the terminal for feeding is inserted into the fixing hole to form a conductive material layer that becomes an inner electrode on the upper end of the feeding terminal, the terminal for feeding and the inner electrode are in good contact with each other. Can be connected electrically.
    [55] In the method for manufacturing the electrode-embedded susceptor according to claim 4 or 5, the material constituting the placement plate and the support plate at least in the region excluding the conductive material layer on the support plate is made of a material having the same main component. You may form an insulating material layer.
    [56] By such a configuration, the bonding of the placement plate and the support plate is further strengthened, and the corrosion resistance and the plasma resistance are also improved.
    [57] The method of manufacturing the electrode-embedded susceptor according to claim 7 is a method of manufacturing a mounting plate on which a plate-shaped sample is placed by an aluminum nitride-based sintered body and a supporting plate for supporting the mounting plate, and then, on the supporting plate, an aluminum nitride-tungsten composite material or A conductive material layer including an aluminum nitride-molybdenum composite material is formed, and then the supporting plate and the placing plate are overlapped with the conductive material layer interposed therebetween and heat-treated under a reducing atmosphere of 1600 ° C. or higher, and the conductive plate is placed between the placing plate and the supporting plate. It is characterized in that the internal electrodes formed by firing the re-layers are formed, and at the same time, they are joined together to be integrated.
    [58] The manufacturing method of the electrode-embedded susceptor is to heat-integrate a mounting plate and a support plate made of a sintered body under a reducing atmosphere of 1600 ° C. or higher, and have an excellent corrosion resistance and plasma resistance, and do not leak current at high temperatures. A acceptor can be obtained easily.
    [59] In addition, since the mounting plate and the supporting plate can be made into a simple plate-shaped body, it is not necessary to make them into a complicated shape, so that the electrode-embedded susceptor can be manufactured at low cost with a high product ratio.
    [60] Moreover, since it is manufactured using the mounting plate and support plate which are already made of a sintered compact, the electrode built-in susceptor which is excellent in dimensional precision can be manufactured easily.
    [61] When a fixing hole is formed in the support plate, and the terminal for feeding is inserted into the fixing hole to form and wire the inner electrode on the upper end of the terminal for feeding, the terminal for feeding and the inner electrode are in good contact with each other. Can be connected.
    [62] The method for manufacturing the electrode-embedded susceptor according to claim 8, wherein the support plate is made after the green body for the mounting plate on which the plate-shaped sample is placed in the slurry containing the aluminum nitride group powder and the green body for the supporting plate for supporting the mounting plate. A conductive material layer including an aluminum nitride-tungsten composite material or an aluminum-molybdenum composite material is formed on the green body for the green body, and then the green body for the support plate and the green body for the mounting plate are overlapped with the conductive material layer therebetween, and they are reduced by 1600 ° C. or more. By firing in an atmosphere, an internal electrode formed by firing the conductive material layer is formed between the placement plate and the support plate, and at the same time, they are bonded and integrated.
    [63] The manufacturing method of the electrode-embedded susceptor is an electrode-embedded type in which the green body for the mounting plate and the green body for the support plate are fired in a reducing atmosphere of 1600 ° C. or higher to form a bonded joint, which is excellent in corrosion resistance and plasma resistance and does not leak current at high temperatures. Susceptor can be obtained easily.
    [64] In addition, since the mounting plate and the support plate can be made into a simple plate-shaped body, they do not have to be complicated, so that the electrode-embedded susceptor can be manufactured at low cost with a high product ratio.
    [65] In addition, since it can be manufactured by one heat treatment (firing), the manufacturing cost of the electrode-embedded susceptor can be reduced.
    [66] In addition, if the fixing hole is formed in the green body for the support plate and the terminal for feeding is inserted into the fixing hole to form a conductive material layer that becomes an internal electrode on the upper end of the terminal for feeding, the terminal for feeding and the inner electrode are good. Can be connected electrically.
    [67] In addition, the method for manufacturing the electrode-embedded susceptor according to claim 7 or 8 is made of a material having at least the same main component as the material constituting the placement plate and the support plate in a region excluding the conductive material layer on the support plate. You may form a layer.
    [68] By such a configuration, the bonding between the placement plate and the support plate is further strengthened, and the corrosion resistance and the plasma resistance are also improved.
    [69] (Form of embodiment of invention)
    [70] An embodiment of an electrode-embedded susceptor of the present invention and a method of manufacturing the same will be described.
    [71] This embodiment is described in detail for better understanding of the gist of the invention and does not limit the invention unless otherwise specified.
    [72] `` Electrode type susceptor ''
    [73] 1 is a cross-sectional view showing an electrode-embedded susceptor according to a first embodiment of the present invention, and FIG.
    [74] The electrode-embedded susceptor 21 includes a mounting plate 22 whose upper surface (circumferential surface) is a mounting surface 22a on which a plate-shaped sample is placed, a support plate 23 integrated with the mounting plate 22, and The internal electrode 24 formed between the mounting plate 22 and the support plate 23 and the fixing hole 25 penetrating in the thickness direction punctured by the support plate 23 are installed in close contact with one end thereof. It is electrically connected to the terminal, and the other end is comprised from the power supply terminals 26 and 26 exposed by the said support plate 23. As shown in FIG.
    [75] The placing surface 22a of the placing plate 22 is polished so that the flatness may become 10 micrometers or less preferably.
    [76] The mounting plate 22 and the supporting plate 23 are integrally bonded by an insulating layer 27 made of an insulating material having the same composition or main component as the material constituting the base plate 22, the supporting plate 23, and the insulating layer. The susceptor main body 28 is comprised by the 27.
    [77] The mounting plate 22 and the supporting plate 23 are made of the same aluminum nitride-based sintered body at the same shape of the overlapping surface.
    [78] The aluminum nitride-based sintered body is not particularly limited as long as it contains 50% by weight or more of aluminum nitride (AIN). For example, silicon carbide (SiC), yttrium oxide (Y 2 O 3 ), calcium oxide (CaO), magnesium oxide ( A composite sintered body containing less than 50% by weight of MgO) may be used.
    [79] The insulating layer 27 is provided with the base plate 22 for joining the boundary of the support plate 23, that is, the boundary region other than the internal electrode 24 forming portion, and the same powder as the base plate 22 and the support plate 23. An insulating material or a powder insulating material having the same main component. Here, "material having the same main component" means materials other than aluminum nitride constituting the base plate 22 and the support plate 23, such as silicon carbide (SiC), yttrium oxide (Y 2 O 3 ), calcium oxide (CaO), It refers to the material whose content, such as magnesium oxide (MgO), is less than 50 weight%.
    [80] The internal electrode 24 generates an electric charge, an electrode for an electrostatic chuck for fixing the plate-shaped sample with electrostatic adsorption force, a heater electrode for energizing the plate-type sample to heat the plate-like sample, and a plasma for generating plasma by energizing high-frequency power and generating plasma. It is used for the electrode etc., and the shape and size are adjusted suitably according to the use.
    [81] The internal electrode 24 is composed of a conductive aluminum nitride-tungsten composite sinter, or a conductive aluminum nitride-molybdenum composite sinter.
    [82] The aluminum nitride-tungsten composite sintered body herein refers to a composite sintered body composed of aluminum nitride and tungsten, and contains at least 10 wt% of aluminum nitride. The aluminum nitride-molybdenum composite sintered body is a composite sintered body composed of aluminum nitride and molybdenum, and refers to at least 20% by weight of aluminum nitride.
    [83] In addition, the aluminum nitride-based sintered body is subjected to a special heat treatment or reduction treatment described in "Method of Manufacturing Electrode-embedded Susceptor", which will be described later, so that both surfaces of the internal electrode 24 are formed of an insulating material (as shown in FIGS. 1 and 2). 30).
    [84] Both surfaces of the internal electrode 24 are covered with the insulating material 30 having a thickness t of about 10 µm to 30 µm, thereby preventing leakage of current at a high temperature, for example, at a temperature higher than 300 ° C.
    [85] As shown in FIG. 2, the insulating material 30 does not contain a sintering aid 32 such as yttria (Y 2 O 3 ), calcia (CaO), magnesia (MgO), titania (TiO 2 ), or the like. It is made of pure aluminum nitride (AIN) particles (31).
    [86] Here, the aluminum nitride group sintered body constituting the mounting plate 22 and the supporting plate 23 includes, for example, yttrium oxide (yria: Y 2 O 3 ) and calcium oxide (calcia: CaO) in addition to the aluminum nitride (AIN) particles 31. ), Magnesium oxide (magnesia: MgO), titanium oxide (titania: TiO 2 ), and the like, and the sintering aid 32 is formed by the special heat treatment or reduction treatment to form the base plate 22 and the support plate 23. The sintering aid 32 in the aluminum nitride-based sintered body is diffused near the surface of the aluminum nitride-tungsten composite sintered body or aluminum nitride-molybdenum composite sintered body constituting the internal electrode 24 and finally removed out of the sintered body so that the sintering aid 32 is removed. It becomes pure aluminum oxide (AIN) particle | grains 31 which do not contain.
    [87] In general, the reason why the resistance value of the aluminum nitride-based sintered body to which the sintering aid is added is lowered due to the impurity element dissolved in the aluminum nitride particles and the particulate (Y-AI-O-based composite oxide) resulting from the sintering aid. Presence.
    [88] However, since the insulating material 30 is made of pure aluminum nitride (AIN) particles 31 that do not contain the sintering aid 32, there is no decrease in resistance due to the sintering aid 32. In addition, since the impurity oxygen in the aluminum nitride (AIN) particles 31, which become the insulating material 30, is blocked by the sintering aid 32 and is discharged out of the particles, the impurity level of the aluminum nitride (AIN) can be reduced. The fall of the resistance value of aluminum nitride (AIN) itself in the vicinity of the electrode 24 is prevented.
    [89] The power supply terminals 26 and 26 are installed to supply current to the internal electrode 24. The number, shape, size, and the like of the power supply terminal 26 and 26 may be the shape and shape of the internal electrode 24, that is, the electrostatic chuck electrode, the heater electrode, It depends on what type of internal electrode 24, such as a plasma generating electrode.
    [90] The power supply terminal 26 is made of, for example, a conductive composite sintered body by pressing and sintering the conductive ceramic powder constituting the internal electrode 24 or a high melting point metal such as tungsten or molybdenum.
    [91] According to the electrode-embedded susceptor 21 of this embodiment, since the internal electrode 24 does not have a possibility of discoloring to corrosive gas or plasma, corrosion resistance and plasma resistance can be improved. In addition, since the internal electrode 24 is covered with the insulating material 30, it is possible to prevent current leakage at high temperatures.
    [92] `` Method of manufacturing an electrode-embedded susceptor ''
    [93] Next, a method of manufacturing the electrode-embedded susceptor of the present embodiment will be described with reference to Figs. 3A to 3C.
    [94] Herein, the method of manufacturing the electrode-embedded susceptor is divided into two methods: (1) a method of gradually cooling at a heat treatment temperature or a firing temperature, and (2) a method of heat treatment or firing under a reducing atmosphere, and each method will be described in detail below. do.
    [95] (1) Method of slowly cooling at heat treatment temperature or firing temperature
    [96] First, a plate-shaped mounting plate 22 and a supporting plate 23 made of an aluminum nitride-based sintered body are produced.
    [97] Subsequently, as shown in FIG. 3A, fixing holes 25 and 25 for sandwiching and supporting the terminals 26 and 26 for power feeding in advance are formed on the support plate 23. The method of drilling the fixing holes 25 and 25 is not particularly limited, but may be drilled using, for example, a diamond drilling method, a laser processing method, an electric discharge processing method, or an ultrasonic processing method. In addition, the processing precision should just be a normal processing precision, and a product ratio can be processed to almost 100%.
    [98] The puncturing positions and numbers of the fixing holes 25 and 25 are determined by the shape and shape of the internal electrode 24.
    [99] Subsequently, the power supply terminal 26 is manufactured so as to have a size and shape that can be tightly fixed to the fixing hole 25 of the support 23.
    [100] As a manufacturing method of the terminal 26 for electric power feeding, when the terminal 26 for electric power feeding is used as an electroconductive composite sintered body, the method of shape | molding electroconductive ceramic powder to a desired shape, and pressure sintering, etc. are mentioned. At this time, it is preferable that the conductive ceramic powder used for the power supply terminal 26 is made of the same as the internal electrode 24 formed inside the electrode-embedded susceptor 21. In the case where the power supply terminal 26 is made of metal, it is formed by a conventionally known metal processing method such as a grinding method or powder metallurgy using a high melting point metal.
    [101] Since the processing precision of this power supply terminal 26 is refired and fixed by the subsequent pressurized heat treatment, you may have clearance at the standard tolerance level of the Japanese Industrial Standards (JIS).
    [102] Subsequently, the terminals 26 and 26 for power feeding produced as shown in FIG. 3B are inserted in the fixing holes 25 and 25 of the support plate 23.
    [103] Here, an internal electrode formation coating agent prepared by dispersing aluminum nitride powder, tungsten powder or molybdenum powder in an organic solvent such as ethyl alcohol is prepared in advance, and the internal electrode formation coating agent is inserted into the power supply terminals 26 and 26. It is applied to a predetermined region on the surface of the support plate 23 so as to contact the terminals 26 and 26 for power supply, and dried to form a conductive material layer 41.
    [104] Since this coating agent for internal electrode formation should be apply | coated to uniform thickness, it is preferable to use coating methods, such as the screen printing method.
    [105] In addition, in order to improve insulation, corrosion resistance, and plasma resistance in a region other than the region where the conductive material layer 41 is formed on the supporting plate 23, the same composition as that of the material constituting the placing plate 22 and the supporting plate 23 is provided. Or the insulating material layer 42 containing the powder material with the same main component is formed.
    [106] As a method of forming the insulating material layer 42, for example, a method in which a coating agent obtained by dispersing aluminum nitride powder in an organic solvent such as ethyl alcohol is applied to a predetermined position on the support plate 23 by screen printing or the like is adopted. .
    [107] Subsequently, the base plate 22 is laminated on the support plate 23 on which the conductive material layer 41 and the insulating material layer 42 are formed, and then heat-treated under pressure. The heat treatment conditions at this time the atmosphere is preferably an inert gas atmosphere such as a vacuum or Ar, He, N 2. 5 MPa-10 MPa are preferable at this time, and heat processing temperature is 1600 degreeC or more, Preferably it is 1600 degreeC-1900 degreeC.
    [108] Subsequently, the sintering aid in the aluminum nitride-based sintered body constituting the mounting plate 22 and the support plate 23 is diffused near the surface of the internal electrode and discharged out of the sintered body. The susceptor slowly cooled or heat-treated at a cooling rate is maintained in a temperature range of 1500 ° C. to 1800 ° C. for at least 4 hours, preferably 5 hours or more.
    [109] If the heat treatment condition is out of the above temperature range, generation of an insulating material covering the internal electrode becomes insufficient. The atmosphere may be the same as the atmosphere at the time of the heat treatment.
    [110] After cooling to room temperature, the susceptor surface is polished to remove the compound containing the exuded sintering aid.
    [111] As shown in FIG. 3C, the conductive material layer 41 formed on the support plate 23 is sintered to become an internal electrode 24 made of aluminum nitride-tungsten composite sinter or aluminum nitride-molybdenum composite sinter.
    [112] In addition, the support plate 23 and the mounting plate 22 are integrally bonded together with the insulating material layer 42 interposed therebetween by heat treatment under pressure without interposing a composite made of organic matter or metal between the support plate 23 and the mounting plate 22. do. In addition, the terminals 26 and 26 for power feeding are refired by heat treatment under pressure, and are fixed to the fixing holes 25 and 25 of the support plate 23. The surface of the internal electrode 24 is coated with an insulating material 30 made of pure aluminum nitride (AIN) particles 31 containing no sintering aid 32.
    [113] In the method for manufacturing the electrode-embedded susceptor, a method of forming a bonded body using the mounting plate 22 and the supporting plate 23 formed from the aluminum nitride-based sintered body containing the sintering aid was described. For example, a sintering aid powder, aluminum nitride-based powder, a binder and an organic solvent are sintered in a slurry containing a plate and a support plate after sintering, and then sintered to obtain a placement plate and a support plate. Moreover, these can also be manufactured by joining together at the same time as sintering.
    [114] In this manufacturing method, the terminal for electric power feeding may use what was already sintered, the green body used as a terminal for electric power supply after sintering, and the thing formed from high melting metals, such as tungsten and molybdenum, may be used. Other manufacturing conditions follow the former manufacturing method.
    [115] (2) Heat treatment or baking in a reducing atmosphere
    [116] According to the "(1) method of gradually cooling at a heat treatment temperature or a firing temperature", a plate-shaped mounting plate 22 and a supporting plate 23 made of an aluminum nitride-based sintered body are manufactured, and the terminal 26 for supplying power to the supporting plate 23 is provided. Drill hole 25 for assembling and holding the same, and insert the terminal 26 for power supply into the hole 25 to form a conductive material layer 41 and an insulating material layer 42 on the support plate 23. The mounting plate 22 and the support plate 23 are stacked with these layers 41 and 42 interposed therebetween.
    [117] Next, heat treatment is performed under pressure in a reducing atmosphere. In this case, the heat treatment temperature is preferably 1600 ° C or higher, preferably 1600 ° C to 1900 ° C, and the pressing force is 5 MPa to 10MP. When the heat treatment temperature is lower than 1600 ° C, reduction is insufficient and the internal electrode is coated. The production of insulating materials is insufficient.
    [118] Examples of this reducing atmosphere include a carbon gas atmosphere, a hydrocarbon gas atmosphere, a hydrogen gas atmosphere, and a carbon monoxide gas atmosphere. The heat treatment time is at least 4 hours, preferably at least 5 hours. Moreover, when heat-processing in a reducing atmosphere, it is preferable because heat-treating using a jig made of a carbon material can enhance the reducing effect.
    [119] After cooling to room temperature, the susceptor surface is polished to remove the compound containing the exuded sintering aid.
    [120] In this way, the conductive material layer 41 formed on the support plate 23 is fired into an internal electrode 24 made of a conductive composite sintered body. In addition, the support plate 23 and the mounting plate 22 are joined between the supporting plate 23 and the mounting plate 22 with the insulating material layer 42 interposed therebetween by heat treatment under pressure without interposing a composite made of an organic material or a metal. To be integrated. The terminals 26 and 26 for power feeding are refired by heat treatment under pressure, and are fixed to the fixing holes 25 and 25 of the support plate 23. The surface of the internal electrode 24 is coated with an insulating material 30.
    [121] In the manufacturing method of the electrode-embedded susceptor, a manufacturing method such as joining and integration in a reducing atmosphere using a mounting plate 22 and a supporting plate 23 formed of an aluminum nitride group sintered body containing a sintering aid was described. The present invention is not necessarily limited thereto, and for example, a sintering aid powder, an aluminum nitride group powder, a binder, and a plate-shaped green body that becomes a support plate and a support plate after sintering are produced by a doctor blade method, and then fired in a reducing atmosphere. In addition, the mounting plate 22 and the supporting plate 23 can be obtained, and they can also be manufactured by joining together at the same time as firing.
    [122] In this manufacturing method, the terminal 26 for electric power feeding may use what was already sintered, the green body used as the terminal 26 for electric power supply after sintering, and the thing formed from high melting metals, such as tungsten and molybdenum, may be used. You may use it. Other manufacturing conditions follow the former manufacturing method.
    [123] As described above, according to the manufacturing method of the electrode-embedded susceptor of the present embodiment, an insulating layer made of an insulating material having the same composition or the same main component as the material constituting them on the joining surface of the mounting plate 22 and the supporting plate 23 ( 27 is formed, and the insulating plate 27 bonds and mounts the mounting plate 22 and the supporting plate 23 so that the corrosive gas, plasma or the like is formed at the interface between the mounting plate 22 and the supporting plate 23. There is no risk of intrusion into the susceptor 21, so that the internal electrodes 24 are not discolored by them. Therefore, there is no fear that the joining interface between the mounting plate 22 and the supporting plate 21 will be destroyed.
    [124] In addition, there is no fear of abnormal discharge or destruction, and the corrosion resistance and plasma resistance of the electrode-embedded susceptor 21 can be improved.
    [125] In addition, since the internal electrode 24 is covered with the insulating material 30, current leakage under high temperature is effectively prevented.
    [126] In addition, according to the manufacturing method of the electrode-embedded susceptor 21, since the support plate 23 and the mounting plate 22 are well bonded and integrated by the insulating layer 27, special studies on these shapes are performed as in the prior art. It is not necessary and can be a simple plate. Therefore, the susceptor 21 can be manufactured inexpensively at a high product ratio.
    [127] Hereinafter, the present invention will be described in detail with reference to Examples and Comparative Examples in which the internal electrode 24 is used as an electrode for an electrostatic chuck.
    [128] (Example 1)
    [129] "Production of terminal for power supply"
    [130] 62 parts by weight of aluminum nitride powder (average particle diameter 0.6 µm, manufactured by Tokuyama Co., Ltd., 5 wt% of sintering aid Y 2 O 3 ), tungsten powder (average particle diameter 0.5 µm, manufactured by Allied Material, Inc.) 158 Weight part and 250 weight part of isopropyl alcohol were mixed, it was made to disperse | distribute uniformly using a planetary ball mill, and it was set as the slurry. Subsequently, alcohol was removed from the slurry by suction filtration and dried to obtain an aluminum nitride-tungsten composite powder.
    [131] Subsequently, the aluminum nitride-tungsten composite powder was molded and fired to obtain a conductive rod-shaped aluminum nitride-tungsten composite sintered body having a diameter of 25 mm and a length of 5 mm to obtain a power supply terminal 26 shown in FIG. 3A. Firing was pressurized by hot pressing, and the firing conditions were set at a firing temperature of 1750 ° C. and a pressure of 20 MPa. The relative density of the aluminum nitride-tungsten composite sintered body after sintering was 98% or more.
    [132] `` Production of support plate ''
    [133] The aluminum nitride powder was molded and fired to obtain a disc-shaped aluminum nitride-based sintered body (support plate 23) having a diameter of 230 mm and a thickness of 5 mm. The firing conditions were the same as the firing conditions of the terminal 26 for power feeding.
    [134] Next, the aluminum nitride-based sintered compact shown in FIG. 3A is provided by drilling a fixed hole 25, 25 for inserting and fixing the terminals 26 and 26 for feeding into the aluminum nitride-based sintered compact with a diamond drill. The support plate 23 which consists of was obtained.
    [135] `` Production of the board ''
    [136] According to the manufacturing method of the support plate 23 which consists of said aluminum nitride group sintered compact, the disk shaped aluminum nitride group sintered compact of 230 mm in diameter and 5 mm in thickness was obtained. Subsequently, the peripheral surface (mounting surface of the plate-shaped sample) of the aluminum nitride-based sintered body was polished to have a flatness of 10 µm to obtain a mounting plate 22 made of the aluminum nitride-based sintered body.
    [137] `` Joint integration ''
    [138] Subsequently, as shown in FIG. 3B, the terminals 26 and 26 for power feeding were pushed into the fixing holes 25 and 25 drilled through the support plate 23 to fix the assembly.
    [139] Subsequently, the conductive composite material (28 wt% aluminum nitride powder and 72 wt%) was formed to be the internal electrode 24 in the heat treatment process under pressure on the supporting plate 23 to which the terminals 26 and 26 were assembled and fixed. Of a tungsten powder), ethyl alcohol, and the like were printed and screened by a screen printing method and dried to form a circular conductive electrode layer 41 for forming internal electrodes.
    [140] Subsequently, 70 wt% of aluminum nitride powder and the remainder of ethyl alcohol were coated and printed by screen printing on a region other than the region for forming the internal electrode 24 on the support plate 23, and the insulating material layer 42 )
    [141] Subsequently, as illustrated in FIG. 3C, the support plate 23 and the mounting plate (eg, the conductive material layer 41 (printing surface) and the insulating material layer 42 are sandwiched with each other, and the polishing surface of the mounting plate 22 is on the upper surface thereof). 22) were superimposed and integrated by heat treatment under a pressurized nitrogen atmosphere with a hot press. The heat treatment conditions at this time were made into the heat processing temperature of 1700 degreeC, and the pressure of 7.5 MPa.
    [142] Subsequently, after slowly cooling to 1500 ° C. at a cooling rate of 1 ° C./min, and allowing to stand at room temperature, the susceptor surface was polished to remove the compound containing the exuded sintering aid, thereby obtaining the electrode-embedded susceptor of Example 1.
    [143] (Example 2)
    [144] The electrode embedded susceptor of Example 2 was obtained by following Example 1 except having maintained for 5 hours at the temperature of 1600 degreeC after heat processing.
    [145] (Example 3)
    [146] According to Example 1, the green body used as a terminal, a support plate, and a mounting plate after sintering was produced using the well-known technique. The green body of the power supply terminal was assembled and fixed in a fixing hole drilled in the green support plate.
    [147] Subsequently, according to the first embodiment, the conductive material layer 41 and the insulating material layer 42 serving as internal electrodes are formed, and these are pressed and fired by hot pressing, and the corresponding sintered bodies are obtained from each green body. Cooling was carried out gradually to obtain an electrode-embedded susceptor of Example 3.
    [148] In addition, the pressurization and heat processing conditions by hot press were the temperature of 1700 degreeC, and the pressure of 10 Mpa. And one peripheral surface (mounting surface of a plate-shaped sample) of the mounting plate was ground so that flatness might be set to 10 micrometers.
    [149] (Example 4)
    [150] The electrode-embedded susceptor of Example 4 was obtained by following Example 3 except having maintained for 5 hours at the temperature of 1600 degreeC after baking by hot press.
    [151] (Example 5)
    [152] According to Example 1, a power feeding terminal, a support plate, and a mounting plate were produced. The power feeding terminal was assembled and fixed in a fixing hole drilled in the support plate.
    [153] Subsequently, in accordance with Example 1, the conductive material layer 41 and the insulating material layer 42 serving as internal electrodes were formed, and the layers were stacked and heat-treated under pressure in a carbon monoxide gas atmosphere for 5 hours under pressure, and the joints were integrated to obtain the electrode-embedded susceptor of Example 5. . Pressurization and heat processing conditions were made into the temperature of 1700 degreeC, and the pressure of 7.5 MPa.
    [154] (Example 6)
    [155] According to Example 1, the green body used as a terminal, a support plate, and a mounting plate after sintering was produced using the well-known technique. The green body of the power supply terminal was assembled and fixed in a fixing hole drilled in the green support plate. Subsequently, in accordance with Example 1, the conductive material layer 41 and the insulating material layer 42 serving as internal electrodes were formed and overlapped with each other. Thereafter, an electrode-embedded susceptor of Example 6 was obtained according to Example 5.
    [156] (Example 7)
    [157] Example 7 was carried out in accordance with Example 1, except that the conductive composite material serving as the internal electrode 24 was changed to a conductive composite material containing 22% by weight of aluminum nitride powder and 78% by weight of molybdenum powder by the pressurization and heat treatment process. An electrode built-in susceptor was obtained.
    [158] (Example 8)
    [159] The electrode-embedded susceptor of Example 8 was obtained by following Example 5 except having changed the conductive composite material used as the internal electrode 24 into the conductive composite material of Example 7 in a pressurization and heat processing process.
    [160] (Comparative Example 1)
    [161] The electrode-embedded susceptor of Comparative Example 1 was obtained in accordance with Example 1 except that the bonded integrated composite sintered body fired by hot press was left to stand cooling (cooling rate of 80 ° C./min).
    [162] Thus, the evaluations 1-3 shown below were implemented about the electrode built-in susceptor of Examples 1-8 and Comparative Example 1 produced in this way.
    [163] `` Evaluation 1 ''
    [164] When the composite cross section of the electrode-embedded susceptor of Examples 1 to 8 and Comparative Example 1 was observed by using a scanning electron microscope (SEM), the mounting plate 22 and the supporting plate 23 and the power supply terminals 26 and 26 were ) Was confirmed to be bonded satisfactorily.
    [165] In addition, after the test for discoloring these electrode-embedded susceptors 21 in a plasma of a mixed gas of CF 4 gas and O 2 gas for 15 hours, the surface of the electrode-embedded susceptor 21 was visually observed. Changes in the appearance could not be confirmed.
    [166] In addition, when the surface roughness of the mounting surface on which the plate-shaped sample was placed was measured, it was found that the surface roughness Ra before the test was 0.12 µm, the surface roughness Ra after the test was 0.13 µm, and the surface roughness remained almost unchanged. .
    [167] Moreover, when the adsorption force of this mounting surface was measured, it turned out that the adsorption force before the said test is 0.03 MPa, the adsorption force after a test is 0.03 MPa, and adsorption force does not change.
    [168] This proved to be very good in corrosion resistance and flame resistance.
    [169] `` Evaluation 2 ''
    [170] The volume specific resistance of the mounting plate of the electrode-embedded susceptor of Examples 1 to 8 was measured using the measuring method shown in FIG.
    [171] In this measuring method, the Si wafer 51 is placed on the mounting surface 22a of the mounting plate 22 of the electrode-embedded susceptor 21 maintained at a predetermined temperature, and the Si wafer 51 is mounted using a DC power supply 52. DC voltage 500V is applied between the power supply terminal 26 and the power supply terminal 26. At this time, the leakage current flowing through the Si wafer 51 is measured using the ammeter 53, and the volume specific resistance R is measured using the measured value. Was calculated according to the following equation (1).
    [172]
    [173] R: Volume specific resistance (Ωcm)
    [174] r: radius of the electrode (cm)
    [175] d: thickness of the mounting plate (= distance between the internal electrode and the Si wafer) (cm)
    [176] V: applied voltage (V)
    [177] A: leakage current (A)
    [178] to be.
    [179] The volume specific resistance value of the mounting plate in the electrode-embedded susceptors of Examples 1 to 8 determined by the above measuring method was 1.6 × 10 10 Ω · cm to 2.0 × 10 10 Ω · cm at 300 ° C. for any electrode-embedded susceptor. In 500 degreeC, it was 6.1 * 10 <7> ohm * cm-7.0 * 10 <7> ohm * cm.
    [180] On the other hand, the volume specific resistance of the mounting plate of the electrode-embedded susceptor of Comparative Example 1 was 4.6 × 10 6 Ω · cm at 300 ° C.
    [181] These results show that the electrode-embedded susceptors of Examples 1 to 8 are sufficiently insulated under high temperature so that no current leaks, and the electrode-embedded susceptors of Comparative Example 1 have insufficient insulation and are leaked under high temperature. It is shown.
    [182] `` Evaluation 3 ''
    [183] The distribution state of the sintering aid component (Y) in the cross-section of the electrode-embedded susceptor of Examples 1 to 8 was analyzed by using an energy dispersive X-ray microanalyzer (EPMA) near the inner electrode surface (30 μm of the inner electrode). ), The presence of the sintering aid component (Y) could not be confirmed.
    [184] Similarly, when the distribution state of the sintering aid component (Y) in the cross section of the electrode-embedded susceptor of Comparative Example 1 was analyzed using EPMA, the sintering aid component (Y) was also found in the vicinity of the inner electrode surface (30 μm in the internal electrode). I could confirm the existence.
    [185] As described above, according to the electrode-embedded susceptor of the present invention, since the internal electrode made of the aluminum nitride-tungsten composite sintered body or the aluminum nitride-molybdenum composite sintered body is built in the susceptor body, the internal electrode is corrosive gas or plasma. There is no fear of discoloration, and it can be made excellent in corrosion resistance and plasma resistance. In addition, since the internal electrode is covered with an insulating material, leakage of current can be prevented at a high temperature.
    [186] According to the manufacturing method of the electrode-embedded susceptor of the present invention, the mounting plate and the support plate are bonded together and heat-treated or reduced, thereby providing excellent corrosion resistance and plasma resistance and preventing current leakage at high temperatures. A acceptor can be obtained easily.
    [187] In addition, since the mounting plate and the supporting plate can be made into a simple plate-shaped body, it is not necessary to make them into a complicated shape, so that the electrode-embedded susceptor can be manufactured at low cost with a high product ratio.
    权利要求:
    Claims (9)
    [1" claim-type="Currently amended] A susceptor body having a circumferential surface on which a plate-shaped sample is placed and made of an aluminum nitride-based sintered body, an internal electrode made of aluminum nitride-tungsten composite sintered body or aluminum nitride-molybdenum composite sintered body embedded in the susceptor body, It is provided on the susceptor body and has a power supply terminal for supplying electricity to the internal electrode,
    The internal electrode is susceptor, characterized in that the coating is made of an insulating material.
    [2" claim-type="Currently amended] The electrode-embedded susceptor according to claim 1, wherein the insulating material is made of an aluminum nitride sintered body.
    [3" claim-type="Currently amended] The susceptor body according to claim 1 or 2, wherein the susceptor body includes a mounting plate having a circumferential surface on which a plate-shaped sample is placed and made of an aluminum nitride-based sintered body, and a supporting plate made of an aluminum nitride-based sintered body. ,
    An electrode-embedded susceptor formed by joining and integrating the plate so as to support the internal electrode through the mounting plate and the supporting plate.
    [4" claim-type="Currently amended] A mounting plate on which a plate-shaped sample is placed by an aluminum nitride-based sintered body and a supporting plate for supporting the mounting plate are manufactured.
    Subsequently, after forming a conductive material layer including an aluminum nitride-tungsten composite material or an aluminum nitride-molybdenum composite material on the support plate,
    The support plate and the placing plate are overlapped with the conductive material layer interposed therebetween, and heat-treated at a temperature of 1600 ° C. or higher,
    Afterwards, at the heat treatment temperature to at least 1500 ℃ by slowly cooling at a cooling rate of 5 ℃ / min or less at a temperature of 1500 ℃ to 1800 ℃ by firing the conductive material layer between the mounting plate and the support plate A method of manufacturing an electrode-embedded susceptor, wherein the electrodes are formed, and at the same time, they are bonded to each other to form an electrode.
    [5" claim-type="Currently amended] After producing the green body for the mounting plate where the plate-shaped sample is placed in the slurry containing the aluminum nitride-based powder and the green body for the supporting plate for supporting the mounting plate,
    After forming a conductive material layer including an aluminum nitride-tungsten composite material or an aluminum nitride-molybdenum composite material on the green body for the support plate,
    Overlapping the green body for the support plate and the green body for the mounting plate with the conductive material layer therebetween, and firing them at a temperature of 1600 ° C. or higher, and then gradually cooling the cooling rate to at least 1500 ° C. at a cooling rate of 5 ° C./min or less, or 1500 ° C. to 1800. A method of manufacturing an electrode-embedded susceptor, wherein an internal electrode formed by firing the conductive material layer is formed between the mounting plate and the support plate while maintaining the temperature at a temperature of 占 폚.
    [6" claim-type="Currently amended] The electrode-embedded type according to claim 4 or 5, wherein an insulating material layer is formed of a material having at least a main component identical to a material constituting the placement plate and the support plate in a region other than the conductive material layer on the support plate. Method of manufacturing susceptor.
    [7" claim-type="Currently amended] After manufacturing the mounting board which a plate-shaped sample is mounted by the aluminum nitride group sintered compact, and the support plate which supports this mounting board,
    Forming a conductive material layer including an aluminum nitride-tungsten composite material or an aluminum nitride-molybdenum composite material on the support plate;
    Subsequently, the support plate and the placing plate are stacked with the conductive material layer interposed therebetween, and then heat-treated in a reducing atmosphere of 1600 ° C. or higher,
    A method of manufacturing an electrode-embedded susceptor, wherein an internal electrode formed by firing the conductive material layer is formed between the placement plate and the support plate, and at the same time, they are bonded to each other.
    [8" claim-type="Currently amended] After producing the green body for the mounting plate where the plate-shaped sample is placed in the slurry containing the aluminum nitride-based powder and the green body for the supporting plate for supporting the mounting plate,
    A conductive material layer including an aluminum nitride-tungsten composite material or an aluminum nitride-molybdenum composite material is formed on the green body for the support plate;
    Subsequently, the green body for the support plate and the green body for the mounting plate are laminated with the conductive material layer interposed therebetween, and the inner plates are formed by firing the conductive material layer between the mounting plate and the support plate by baking them in a reducing atmosphere of 1600 ° C. or higher. A method of manufacturing an electrode-embedded susceptor, wherein these are joined together to be integrated.
    [9" claim-type="Currently amended] The electrode-embedded electrode according to claim 7 or 8, wherein an insulating material layer is formed of a material having at least the same main component as the material constituting the placement plate and the support plate in a region other than the conductive material layer on the support plate. Method for producing a acceptor.
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    同族专利:
    公开号 | 公开日
    KR100911485B1|2009-08-11|
    JP3973872B2|2007-09-12|
    US20030071260A1|2003-04-17|
    JP2003124299A|2003-04-25|
    US6872908B2|2005-03-29|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-10-17|Priority to JPJP-P-2001-00319693
    2001-10-17|Priority to JP2001319693A
    2002-10-11|Application filed by 스미토모 오사카 세멘토 가부시키가이샤
    2003-04-26|Publication of KR20030032850A
    2009-08-11|Application granted
    2009-08-11|Publication of KR100911485B1
    优先权:
    申请号 | 申请日 | 专利标题
    JPJP-P-2001-00319693|2001-10-17|
    JP2001319693A|JP3973872B2|2001-10-17|2001-10-17|Electrode built-in susceptor and manufacturing method thereof|
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