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    • 专利摘要:
    (Problem) To provide a negative photoresist composition for a thick film, a photoresist film, and a bump forming method using the same, which are highly sensitive and have good plating resistance and are suitable for forming a thick film suitable as a bump forming material. (Solution) A negative photoresist composition for thick film, comprising (A) a novolak resin, (B) plasticizer, (C) crosslinking agent, and (D) acid generator, and applying this composition on a substrate A photoresist film having a film thickness of 5 to 100 µm which is dried. Furthermore, the bump forming method of apply | coating this pattern on the board | substrate of an electronic component, patterning, and plating.
    公开号:KR20030006969A
    申请号:KR1020020027420
    申请日:2002-05-17
    公开日:2003-01-23
    发明作者:사이또고지；미스미고이찌；오꾸이도시끼；고마노히로시
    申请人:도오꾜오까고오교 가부시끼가이샤；
    IPC主号:
    专利说明:

    Negative photoresist composition for thick film, photoresist film and bump formation method using same {NEGATIVE PHOTORESIST COMPOSITIONS FOR THE FORMATION OF THICK FILMS, PHOTORESIST FILMS AND METHODS OF FORMING BUMPS USING THE SAME}
    [1] The present invention relates to a negative photoresist composition for thick films, a photoresist film and a bump forming method using the same. More specifically, the present invention relates to photofabrication, such as bump formation, wiring formation, interlayer insulating layer, circuit protective film, and precision component processing and manufacturing performed during the manufacture of circuit boards and the mounting of semiconductors and electronic components on circuit boards. The present invention relates to a negative photoresist composition for thick film suitable for alkali development.
    [2] Photofabrication is a photosensitive resin composition applied to the surface of a workpiece, the coating film is patterned by photolithography technique, and a single or combination of electroforming techniques mainly comprising chemical etching, electrolytic etching or electroplating using this as a mask. It is a general term for the technology for manufacturing various precision parts, and is currently mainstream of precision fine processing technology.
    [3] Recently, with the downsizing of electronic devices, high integration and ASIC of LSI is progressing rapidly, and multi-pin thin film mounting for mounting LSI on electronic devices is required, and attention is paid to bare chip mounting by TAB method or flip chip method. I am getting it. In such a multi-pin mounting method, a projection electrode having a height of 20 μm or more called a bump, which is a connecting terminal, needs to be disposed on the substrate with high precision, and in order to meet the further miniaturization of the LSI, more accurate bumps are required. . In addition, it is also common to form wiring between the chip and the connecting terminal using a redistribution process to assist in the formation of the connecting terminal. In this case, a wiring pattern is formed using a resist of about 5 to 20 mu m.
    [4] A thick film photoresist is used as a bump forming material or a redistribution material used when forming such a bump. The thick film photoresist means a resist capable of forming a film thickness of about 5 μm or more on a substrate. Bump is formed by a plating process using this thick film pattern as a mask.
    [5] For example, JP-A-10-207057, JP-A-2000-39709 and JP-A-2000-66386 describe the thick film photosensitive resin composition used for bump formation or wiring formation. However, in these conventional photosensitive resin compositions for thick films, since the film is thick, many reaction initiators are required to sufficiently react the entire resist film. However, when there are many reaction initiators, compatibility tends to deteriorate or storage stability may fall. Therefore, a more sensitive reaction initiator is required.
    [6] On the other hand, as a highly sensitive photosensitive resin composition, the chemically amplified resist using an acid generator is known. A characteristic of the chemically amplified resist is that protonic acid generated from an acid generator as a component by radiation irradiation causes an acid catalyst reaction to a base resin or the like in the resin composition by heat treatment after exposure. In this way, a significant increase in sensitivity is achieved compared to a conventional resist having a photoreaction efficiency (reaction per photon) of less than one. Representative examples of chemically amplified negative resists include resists combining polyvinylphenols and melamine derivatives, such as L. E. Bogan, in Proceeding of SPIE, vol. 1086, pages 34-47 (1989). However, when a thick film was prepared using these chemically amplified resists, cracks (cracks) were generated and required plating resistance could not be obtained.
    [7] Accordingly, an object of the present invention is to solve the problems of the prior art, and is not only high sensitivity and good plating resistance, but also a negative photoresist composition for a thick film suitable for forming a thick film as a material for forming bumps, a photoresist film and the same. It is providing the bump formation method used.
    [8] Invention of Claim 1 is a negative photoresist composition for thick films containing (A) novolak resin, (B) plasticizer, (C) crosslinking agent, and (D) acid generator.
    [9] Invention of Claim 2 is a negative photoresist composition for thick films of Claim 1 characterized by (A) component being alkali-soluble novolak resin.
    [10] The invention of claim 3 is a negative photoresist composition for a thick film according to claim 1, wherein component (B) is an alkali-soluble acrylic resin.
    [11] The invention of claim 4 is the negative photoresist composition for a thick film according to claim 1, wherein component (B) is an alkali-soluble vinyl resin.
    [12] The invention of claim 5 is the negative photoresist composition for a thick film according to claim 1, wherein the component (C) is an alkoxymethylated amino resin.
    [13] According to the invention of claim 6, the alkoxy methylated amino resin is at least one member selected from methoxymethylated melamine resin, ethoxymethylated melamine resin, propoxymethylated melamine resin and butoxymethylated melamine resin, wherein the negative film for thick film according to claim 5 is used. Type photoresist composition.
    [14] The invention of claim 7 is the negative photoresist composition for thick films according to claim 1, wherein the component (D) is a triazine compound.
    [15] The invention of claim 8 is a photoresist film having a thickness of 5 to 100 µm formed by applying and drying the negative photoresist composition for a thick film according to any one of claims 1 to 7 on a substrate.
    [16] The invention of claim 9 is applied to the negative photoresist composition for thick film according to any one of claims 1 to 7 on a substrate of an electronic component, and the resulting coating film is irradiated, heated and developed through a mask of a predetermined pattern. Then, the bump formation method characterized by plating.
    [17] Hereinafter, the composition of this invention is demonstrated.
    [18] (A) novolac resin
    [19] (A) novolak resin used for this invention, Preferably it is alkali-soluble. Such (A) novolak resin is obtained by addition condensation of, for example, an aromatic compound having a phenolic hydroxyl group (hereinafter, simply referred to as "phenols") and aldehydes under an acid catalyst. Phenols used at this time are, for example, phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol and p-butyl Phenol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, p-phenylphenol, resorcinol, hydroquinone, hydroquinone monomethyl ether, pyrogarol, phloroglycinol, hydroxydiphenyl, bisphenol A, a molar asset, a molar ester, alpha -naphthol, (beta) -naphthol, etc. are mentioned. Examples of the aldehydes include formaldehyde, paraformaldehyde, furfural, benzaldehyde, nitrobenzaldehyde, acetoaldehyde and the like. Although it does not specifically limit as a catalyst in an addition condensation reaction, For example, hydrochloric acid, nitric acid, sulfuric acid, formic acid, oxalic acid, acetic acid etc. are used as an acid catalyst.
    [20] Although the weight average molecular weight of (A) novolak resin is not specifically limited, 5,000-30,000 are preferable.
    [21] The component (A) may be contained in the range of 50 to 95 parts by weight, preferably 65 to 80 parts by weight per 100 parts by weight of the total amount of the components (A) to (D). If the component (A) is less than 50 parts by weight, the plating solution resistance, bump shape, and peelability may be deteriorated, which is not preferable.
    [22] (B) plasticizer
    [23] The plasticizer (B) used for this invention is a polymer etc. which have an ethylenic double bond, Especially, it is preferable to employ | acquire an acryl-type polymer or a vinyl type polymer. Hereinafter, the example using an acrylic polymer or a vinyl polymer as (B) component is demonstrated.
    [24] In the component (B) of the present invention, the acrylic polymer is particularly preferably alkali-soluble, and further contains a structural unit derived from a polymerizable compound having an ether bond and a structural unit derived from a polymerizable compound having a carboxyl group. It is preferable.
    [25] As a polymeric compound which has an ether bond, 2-methoxyethyl (meth) acrylate, methoxy triethylene glycol (meth) acrylate, 3-methoxybutyl (meth) acrylate, ethylcarbitol (meth) acrylate And (meth) acrylic acid derivatives having ether bonds and ester bonds such as phenoxy polyethylene glycol (meth) acrylate, methoxy polypropylene glycol (meth) acrylate, tetrahydrofurfural (meth) acrylate, and the like. It is preferably 2-methoxyethyl acrylate and methoxy triethylene glycol acrylate. These compounds can be used individually or in combination of 2 or more types.
    [26] Examples of the polymerizable compound having a carboxyl group include monocarboxylic acids such as acrylic acid, methacrylic acid and crotonic acid, dicarboxylic acids such as maleic acid, fumaric acid and itaconic acid, 2-methacryloyloxyethyl succinic acid and 2- Methacrylic acid derivatives having carboxyl groups and ester bonds, such as methacryloyloxyethyl maleic acid, 2-methacryloyloxyethylphthalic acid, 2-methacryloyloxyethylhexahydrophthalic acid, and the like can be exemplified. Is acrylic acid and methacrylic acid. These compounds can be used individually or in combination of 2 or more types.
    [27] The polymeric compound which has an ether bond in an acryl-type polymer is 30 to 90 weight%, Preferably it is 40 to 80 weight%. When it exceeds 90% by weight (A) compatibility with novolak resin solution deteriorates, and Benadcell (a 5 to 7 hexagonal network pattern having nonuniformity on the surface of the coating film due to gravity or surface tension gradient) during prebaking. This tends to occur, making it difficult to obtain a uniform resist film, and when less than 30% by weight, cracks tend to occur during plating.
    [28] The polymeric compound which has a carboxyl group in an acryl-type polymer is 2-50 weight%, Preferably it is 5-40 weight%. If it is less than 2 weight%, alkali solubility of an acrylic resin falls and sufficient developability is not obtained. Moreover, peelability falls and a resist film remains on a board | substrate. When it exceeds 50 weight%, there exists a tendency for the fall of the residual film rate after image development, and plating resistance to deteriorate.
    [29] The weight average molecular weight of the acrylic polymer is 10,000 to 800,000, preferably 30,000 to 500,000. If the thickness is less than 10,000, the resist film does not obtain sufficient strength and tends to cause swelling and cracking of the profile during plating. When it exceeds 800,000, there exists a tendency for adhesiveness to fall.
    [30] The acrylic polymer may also contain other radically polymerizable compounds as monomers for the purpose of appropriately controlling physical and chemical properties. "Other radically polymerizable compound" means radically polymerizable compounds other than the polymerizable compound mentioned above. As such a radically polymerizable compound, (meth) acrylic-acid alkylesters, such as methyl (meth) acrylate, ethyl (meth) acrylate, and butyl (meth) acrylate; (Meth) acrylic-acid hydroxyalkyl esters, such as 2-hydroxyethyl (meth) acrylate and 2-hydroxypropyl (meth) acrylate; (Meth) acrylic acid aryl esters, such as phenyl (meth) acrylate and benzyl (meth) acrylate; Dicarboxylic acid diesters such as diethyl maleate and dibutyl fumarate; Vinyl group-containing aromatic compounds such as styrene and α-methylstyrene; Vinyl group-containing aliphatic compounds such as vinyl acetate; Conjugated diolefins such as butadiene and isoprene; Nitrile-group containing polymeric compounds, such as an acrylonitrile and methacrylonitrile; Chlorine-containing polymerizable compounds such as vinyl chloride and vinylidene chloride; Amide bond containing polymeric compounds, such as acrylamide and methacrylamide, etc. can be used. These compounds can be used individually or in combination of 2 or more types, Among these, n-butylacrylate, benzyl methacrylate, methyl methacrylate, etc. are preferable. The other radically polymerizable compound in the acrylic polymer is preferably less than 50% by weight, more preferably less than 40% by weight.
    [31] As a polymerization solvent used when synthesize | combining an acryl-type polymer, For example, Alcohol, such as ethanol and diethylene glycol; Alkyl ethers of polyhydric alcohols such as ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, and diethylene glycol ethyl methyl ether; Alkyl ether acetates of polyhydric alcohols such as ethylene glycol ethyl ether acetate and propylene glycol methyl ether acetate; Aromatic hydrocarbons such as toluene and xylene; Ketones such as acetone and methyl isobutyl ketone; Ester, such as ethyl acetate and butyl acetate, can be used. Among these, alkyl ethers of polyhydric alcohols and alkyl ether acetates of polyhydric alcohols are particularly preferable.
    [32] As a polymerization catalyst used when synthesizing an acrylic polymer, a normal radical polymerization initiator can be used, for example, azo compounds such as 2,2'-azobisisobutyronitrile; Organic peroxides, such as benzoyl peroxide and di-t-butyl peroxide, etc. can be used.
    [33] Moreover, according to this invention, a vinyl polymer can be used preferably as (B) component. The vinyl polymer used in the present invention is a polymer obtained from a vinyl compound.
    [34] Polyvinyl chloride, polystyrene, polyhydroxystyrene, polyvinyl acetate, polyvinylbenzoic acid, polyvinyl alcohol, polyacrylic acid, polymethacrylic acid, polyacrylic acid ester, polymaleimide, polyacrylamide, polyacrylonitrile, Polyvinyl phenol and copolymers thereof.
    [35] Among these resins, those having a carboxyl group, a phenolic hydroxyl group, or the like in the resin side chain or the main chain are preferable because alkali development is possible. Since resin which has a carboxyl group is especially high alkali developability, it is preferable. Further, the weight average molecular weight of the vinyl polymer is preferably 10,000 to 200,000, preferably 50,000 to 100,000.
    [36] The component (B) may be contained in the range of 5 to 30 parts by weight, preferably 10 to 20 parts by weight, per 100 parts by weight of the total amount of the components (A) to (D). When the component (B) is less than 5 parts by weight, the plating liquid resistance, such as lifting of the resist and cracking during plating, is lowered, and when the content of the component (B) exceeds 30 parts by weight, the strength of the formed resist film is decreased, resulting in a swelling profile. A tendency to fail to obtain and to reduce resolution is observed.
    [37] (C) crosslinking agent
    [38] Examples of the crosslinking agent used in the present invention (hereinafter referred to as component (C)) include amino compounds such as melamine resins, urea resins, guanamine resins, glycoluril-formaldehyde resins, succinylamide-formaldehyde resins, and ethylene urea-formaldehyde. Although resin etc. can be used, Especially the alkoxy methylation amino resin, such as an alkoxy methylation melamine resin and an alkoxy methylation urea resin, etc. can be used preferably. The alkoxymethylated amino resin is etherified, for example, by condensation of melamine or urea with formalin in boiling water solution with lower alcohols such as methyl alcohol, ethyl alcohol, propyl alcohol, butyl alcohol, isopropyl alcohol, and the like. It can manufacture by cooling liquid and making it precipitate. Specific examples of the alkoxymethylated amino resin include methoxymethylated melamine resin, ethoxymethylated melamine resin, propoxymethylated melamine resin, butoxymethylated melamine resin, methoxymethylated urea resin, ethoxymethylated urea resin, and propoxymethylated urea resin. , Butoxy methylated urea resin, and the like. The said alkoxy methylation amino resin can be used individually or in combination of 2 or more types. In particular, the alkoxy methylated melamine resin is preferable because a small amount of dimensional change of the resist pattern with respect to the change in the irradiation amount of radiation can be formed to form a stable resist pattern. Among them, methoxymethylated melamine resins, ethoxymethylated melamine resins, propoxymethylated melamine resins and butoxymethylated melamine resins are preferable.
    [39] The component (C) may be contained in the range of 1 to 30 parts by weight, preferably 5 to 20 parts by weight, per 100 parts by weight of the total amount of the components (A) to (D). If the component (C) is less than 1 part by weight, the resulting thick film may have poor plating resistance, chemical resistance, adhesiveness, or formed bump shape, which is not preferable. It can be undesirable.
    [40] (D) acid generator
    [41] The acid generator used in the present invention (hereinafter referred to as component (D)) is not particularly limited as long as it is a compound that generates an acid directly or indirectly by light, but specifically 2,4-bis (trichloromethyl)- 6- [2- (2-furyl) ethenyl] -s-triazine, 2,4-bis (trichloromethyl) -6- [2- (5-methyl-2-furyl) ethenyl] -s- Triazine, 2,4-bis (trichloromethyl) -6- [2- (5-ethyl-2-furyl) ethenyl] -s-triazine, 2,4-bis (trichloromethyl) -6- [2- (5-propyl-2-furyl) ethenyl] -s-triazine, 2,4-bis (trichloromethyl) -6- [2- (3,5-dimethoxyphenyl) ethenyl]- s-triazine, 2,4-bis (trichloromethyl) -6- [2- (3,5-diethoxyphenyl) ethenyl] -s-triazine, 2,4-bis (trichloromethyl)- 6- [2- (3,5-dipropoxyphenyl) ethenyl] -s-triazine, 2,4-bis (trichloromethyl) -6- [2- (3-methoxy-5-ethoxy Phenyl) ethenyl] -s-triazine, 2,4-bis (trichloromethyl) -6- [2- (3-methoxy-5-propoxyphenyl) ether ] -s-triazine, 2,4-bis (trichloromethyl) -6- [2- (3,4-methylenedioxyphenyl) ethenyl] -s-triazine, 2,4-bis (trichloro Methyl) -6- (3,4-methylenedioxyphenyl) -s-triazine, 2,4-bis-trichloromethyl-6- (3-bromo-4methoxy) phenyl-s-triazine, 2,4-bis-trichloromethyl-6- (2-bromo-4methoxy) phenyl-s-triazine, 2,4-bis-trichloromethyl-6- (2-bromo-4methoxy ) Styrylphenyl-s-triazine, 2,4-bis-trichloromethyl-6- (3-bromo-4-methoxy) styrylphenyl-s-triazine, 2- (4-methoxyphenyl ) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxynaphthyl) -4,6-bis (trichloromethyl) -1,3,5- Triazine, 2- [2- (2-furyl) ethenyl] -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- [2- (5-methyl-2-furyl ) Ethenyl] -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- [2- (3,5-dimethoxyphenyl) ethenyl] -4,6-bis (trichloro) Rhomethyl) -1,3,5-triazine, 2- [2- (3,4-dimethoxyphenyl) ether ] -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (3,4-methylenedioxyphenyl) -4,6-bis (trichloromethyl) -1,3, Halogen-containing such as 5-triazine, tris (1,3-dibromopropyl) -1,3,5-triazine, tris (2,3-dibromopropyl) -1,3,5-triazine Halogen-containing triazine compounds represented by the following general formulas such as triazine compounds and tris (2,3-dibromopropyl) isocyanurate;
    [42]
    [43] (Wherein, R 1 to R 3 may be the same or different, respectively, and represent a halogenated alkyl group)
    [44] α- (p-toluenesulfonyloxyimino) -phenylacetonitrile, α- (benzenesulfonyloxyimino) -2,4-dichlorophenylacetonitrile, α- (benzenesulfonyloxyimino) -2,6-dichloro Phenyl acetonitrile, α- (2-chlorobenzenesulfonyloxyimino) -4-methoxyphenylacetonitrile, α- (ethylsulfonyloxyimino) -1-cyclopentenylacetonitrile, a compound represented by the following general formula :
    [45]
    [46] (Wherein R 4 represents a monovalent to trivalent organic group, R 5 represents a substituted, unsubstituted saturated hydrocarbon group, unsaturated hydrocarbon group or aromatic compound group, and n represents a natural number of 1 to 3. The compound group refers to a group of a compound exhibiting physical and chemical properties peculiar to an aromatic compound, and examples thereof include aromatic hydrocarbon groups such as phenyl and naphthyl groups, and heterocyclic groups such as furyl and thienyl groups. It may have one or more atoms, alkyl groups, alkoxy groups, nitro groups, etc. In addition, R 5 is particularly preferably an alkyl group having 1 to 4 carbon atoms, and may include a methyl group, an ethyl group, a propyl group, a butyl group, and in particular, R 4 the aromatic compound group, R 5 is a lower alkyl group, compounds are preferred. the acid generator represented by the general formula are when n = 1, R 4 is a phenyl group, a methoxy As any one of a phenyl group, a methoxyphenyl group, R 5 is a methyl compound, specifically, α- (methylsulfonyl oksiyi mino) -1-phenyl-acetonitrile, α- (methylsulfonyl oksiyi mino) -1- (p -Methylphenyl) acetonitrile and-(methylsulfonyloxyimino) -1- (p-methoxyphenyl) acetonitrile When n = 2, the acid generator represented by the said general formula specifically, The acid generator represented by the following formula is mentioned.)
    [47]
    [48] Bis (p-toluenesulfonyl) diazomethane, bis (1,1-dimethylethylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (2,4-dimethylphenylsulfonyl) dia Bissulfonyl diazomethanes, such as crude methane; p-toluenesulfonic acid 2-nitrobenzyl, p-toluenesulfonic acid 2,6-dinitrobenzyl, nitrobenzyltosylate, dinitrobenzyltosylate, nitrobenzylsulfonate, nitrobenzyl carbonate, dinitrobenzyl carbonate, etc. Nitrobenzyl derivatives of; Pyrogarol trimesylate, pyrugarol tritosylate, benzyltosylate, benzylsulfonate, N-methylsulfonyloxysuccinimide, N-trichloromethylsulfonyloxysuccinimide, N-phenylsulfonyloxy Sulfonic acid esters such as maleimide and N-methylsulfonyloxyphthalimide; Diphenyl iodonium hexafluorophosphate, (4-methoxyphenyl) phenyl iodonium trifluoromethanesulfonate, bis (p-tert-butylphenyl) iodonium trifluoromethanesulfonate, triphenylsulfonium hexafluoro Onium salts such as lophosphate, (4-methoxyphenyl) diphenylsulfonium trifluoromethanesulfonate, and (p-tert-butylphenyl) diphenylsulfonium trifluoromethanesulfonate; Benzointosylates such as benzointosylate and α-methylbenzointosylate; Other diphenyl iodonium salt, triphenyl sulfonium salt, phenyl diazonium salt, benzyl carbonate, etc. are mentioned. In particular, the triazine compound can be preferably used because of its high performance as an acid generator by light and good solubility even when a solvent is used. Among them, bromo-containing triazine compounds, especially 2,4-bis-trichloromethyl-6- (3-bromo-4methoxy) phenyl-s-triazine, 2,4-bis-trichloromethyl-6 -(3-bromo-4-methoxy) styryl-s-triazine and tris (2,3-dibromopropyl) isocyanurate can be preferably used.
    [49] The component (D) may be contained in the range of 0.01 to 5 parts by weight, preferably 0.05 to 1 part by weight, more preferably 0.1 to 0.5 parts by weight based on 100 parts by weight of the total of the components (A) to (D). have. If the component (D) is less than 0.01 part by weight, crosslinking curing due to heat or light is not sufficiently performed, and thus the plating resistance, chemical resistance, and adhesion of the obtained thick film may be deteriorated, or the bump shape formed may be poor, which is undesirable. Exceeding the weight part may cause developing defects during development, which is undesirable.
    [50] Moreover, the photosensitive composition for thick films of this invention can mix | blend an organic solvent suitably for viscosity adjustment. Specifically as the organic solvent, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dipropyl ether, propylene Glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene Glycol monophenyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol mono Butyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monophenyl ether acetate , Propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, 2-methoxybutyl acetate, 3-methoxybutyl acetate, 4-methoxybutyl acetate, 2-methyl-3-meth Methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, 3-ethyl-3-methoxybutyl acetate, 2-ethoxybutyl acetate, 4-ethoxybutyl acetate, 4-propoxybutyl acetate, 2-meth Methoxypentyl acetate, 3-methoxypentyl acetate, 4-methoxypentyl acetate , 2-methyl-3-methoxypentyl acetate, 3-methyl-3-methoxypentyl acetate, 3-methyl-4-methoxypentyl acetate, 4-methyl-4-methoxypentyl acetate, acetone, methyl ethyl ketone , Diethyl ketone, methyl isobutyl ketone, ethyl isobutyl ketone, tetrahydrofuran, cyclohexanone, methyl propionate, ethyl propionate, propyl propionate, isopropyl propionate, methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, 2-hydroxy-2-methyl, methyl-3-methoxypropionate, ethyl-3-methoxypropionate, ethyl-3-ethoxypropionate, ethyl-3-propoxypropionate, propyl 3-methoxypropionate, isopropyl-3-methoxypropionate, ethyl ethoxy acetate, ethyl oxyacetate, 2-hydroxy-3-methylbutanoate, methyl acetate, ethyl acetate, propyl acetate, Isopropyl acetate, butyl acetate, ace Isoamyl acid, methyl carbonate, ethyl carbonate, propyl carbonate, butyl carbonate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, butyl pyruvate, methyl acetoacetate, ethyl acetoacetate, benzyl methyl ether, benzyl ethyl ether, dihexyl ether, benzyl acetate Ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, benzene, toluene, xylene, cyclohexanone, methanol, ethanol, propanol, butanol, hexanol, cyclohexanol, ethylene glycol, diethylene glycol And glycerin. These may be used independently, or may mix and use 2 or more types.
    [51] The amount of these solvents used is preferably in the range where the solid content concentration is 65% by weight or less in order to obtain a film thickness of 20 µm or more by using the spin coating method for the obtained thick film negative photoresist composition. When the solid content concentration exceeds 65% by weight, the fluidity of the composition is markedly deteriorated, which makes it difficult to handle and hardly obtains a uniform resist film by the spin coating method.
    [52] In addition to the above components, the composition of the present invention may contain a quencher such as a secondary or tertiary amine such as triethylamine, tributylamine, dibutylamine, triethanolamine, etc., if necessary. .
    [53] You may mix | blend surfactant with a composition of this invention according to a peel for the purpose of improving applicability | paintability, antifoaming property, leveling property, etc .. As surfactant, various active agents of anionic type, cationic type, and nonionic type are mentioned. For example, BM-1000, BM-1100 (manufactured by BM Chemi Corporation), Megapack F142D, Copper F172, Copper F173, Copper F183 (manufactured by Dainippon Ink & Chemical Co., Ltd.), Flora FC-135, and FC-170C , East FC-430, East FC-431 (manufactured by Sumitomo 3M Co., Ltd.), Supron S-112, East S-113, East S-131, East S-141, East S-145 (Asahigarasu Co., Ltd.) ), SH-28PA, copper-190, copper-193, SZ-6032, SF-8428 (manufactured by Toray Silicone Co., Ltd.) and the like. The usage-amount of these surfactant becomes like this. Preferably it is 5 weight part or less with respect to 100 weight part of (A) novolak resin.
    [54] In the composition of the present invention, an adhesion promoter may be used to improve the adhesion to the substrate. As the adhesion promoter used, a functional silane coupling agent is effective. Here, a functional silane coupling agent means the silane coupling agent which has reactive substituents, such as a carboxyl group, a methacryloyl group, an isocyanate group, and an epoxy group, As a specific example, a trimethoxy silyl benzoic acid, (gamma)-methacryloxypropyl trimeth Oxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and the like. As for the compounding quantity, 20 weight part or less is preferable per 100 weight part of (A) novolak resin.
    [55] In addition, the composition of the present invention includes monocarboxylic acids such as acetic acid, propionic acid, n-butyric acid, iso-butyric acid, n-gil acetic acid, iso-gylic acid, benzoic acid and cinnamic acid in order to finely adjust the solubility in an alkaline developer; Lactic acid, 2-hydroxybutyric acid, 3-hydroxybutyric acid, salicylic acid, m-hydroxybenzoic acid, p-hydroxybenzoic acid, 2-hydroxy cinnamic acid, 3-hydroxy cinnamic acid, 4-hydroxy cinnamic acid, 5-hydroxy Hydroxy monocarboxylic acids such as isophthalic acid and cylinic acid; Oxalic acid, succinic acid, glutaric acid, adipic acid, maleic acid, itaconic acid, hexahydrophthalic acid, phthalic acid, isophthalic acid, terephthalic acid, 1,2-cyclohexanedicarboxylic acid, 1,2,4-cyclohexanetricarboxyl Polyhydric carboxylic acids such as acid, trimellitic acid, pyromellitic acid, cyclopentanetetracarboxylic acid, butanetetracarboxylic acid, 1,2,5,8-naphthalenetetracarboxylic acid; Itaconic anhydride, succinic anhydride, citraconic anhydride, dodecenyl succinic anhydride, tricarbanylic acid anhydride, maleic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, hydroic acid anhydride, 1,2,3,4- Butanetetracarboxylic acid, cyclopentanetetracarboxylic dianhydride, phthalic anhydride, pyromellitic anhydride, trimellitic anhydride, benzophenonetetracarboxylic acid anhydride, ethylene glycol bis anhydride trimellitate, glycerin tris anhydride trimellitate, etc. Acid anhydrides may be added. In addition, N-methylformamide, N, N-dimethylformamide, N-methylformanilide, N-methylacetamide, N, N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, benzylethyl ether , Dihexyl ether, acetonyl acetone, isophorone, capric acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyro High boiling point solvents, such as lactone, ethylene carbonate, propylene carbonate, and phenyl cellosolve acetate, can also be added.
    [56] The amount of the compound for finely adjusting the solubility in the alkaline developer is not limited as long as it can be adjusted depending on the use and the coating method, and the composition can be uniformly mixed, but is preferably 60% by weight or less with respect to the obtained composition. 40 weight% or less.
    [57] Moreover, a filler, a coloring agent, a viscosity modifier, etc. can also be added to the composition of this invention as needed. Examples of the filler include silica, alumina, talc, bentite, zirconium silicate, powder glass, and the like. As a coloring agent, extender pigments, such as alumina bag, clay, barium carbonate, and barium sulfate; Inorganic pigments such as zincation, lead white, sulfur lead, briquette, ultramarine blue, royal blue, titanium oxide, zinc chromate, bengara and carbon black; Organic pigments such as brilliant carmine 6B, permanent red 6B, permanent red R, benzidine yellow, phthalocyanine blue and phthalocyanine green; Basic dyes such as magenta and rhodamine; Direct dyes such as direct scarlet and direct orange; Acid dyes, such as roserine and methyl yellow, are mentioned. Examples of the viscosity modifier include bentite, silica gel and aluminum powder. These additives are in a range that does not impair the essential properties of the composition, preferably up to 50% by weight relative to the resulting composition.
    [58] Moreover, an antifoamer and other additives can be added to the composition of this invention as needed. Examples of the antifoaming agent include silicone-based and fluorine-based various antifoaming agents.
    [59] When the filler and the pigment are not added, the preparation of the composition of the present invention only needs to be mixed and stirred by a conventional method. When the filler and the pigment are added, dispersers such as a dissolver, a homogenizer, and a three roll mill are used. It is good to disperse and mix using. Moreover, you may filter using a mesh, a membrane filter, etc. further as needed.
    [60] And although the composition of this invention is preferable for thick films, the use range is not limited to this, For example, it can be used also as a protective film at the time of the etching of various board | substrates, such as copper, chromium, iron, and a glass substrate, and a resist for semiconductor manufacture.
    [61] The film thickness when the composition of the present invention is used as a photoresist film is 5 to 100 m, preferably 5 to 40 m, and more preferably 20 to 30 m.
    [62] Formation of the bump using the composition of the present invention as a resist film is performed by, for example, the following method.
    [63] (1) Formation of Coating Film: A solution of the composition prepared as described above is applied on a substrate having a predetermined wiring pattern with a thickness of 5 µm to 100 µm, preferably 20 to 40 µm, and the solvent is removed by heating. The desired coating film is formed. As a coating method on a to-be-processed board | substrate, methods, such as a spin coat method, a roll coat method, the screen printing method, an applicator method, can be employ | adopted. Although the prebaking conditions of the coating film of the composition of this invention depend on the kind, compounding ratio, coating film thickness, etc. of each component in a composition, it is 70-130 degreeC normally, Preferably it is 80-120 degreeC, about 2 to 60 minutes. .
    [64] (2) Irradiation: The obtained coating film is exposed to only a wiring pattern portion forming a bump by irradiating radiation such as ultraviolet rays or visible rays having a wavelength of 300 to 500 nm through a mask of a predetermined pattern. As a source of these radiations, a low pressure mercury lamp, a high pressure mercury lamp, an ultra high pressure mercury lamp, a metal halide lamp, an argon gas laser, or the like can be used. Radiation means ultraviolet rays, visible rays, far ultraviolet rays, X-rays, electron beams, and the like. The amount of radiation varies depending on the type of each component in the composition, the compounding amount, the film thickness of the coating film, and the like.
    [65] (3) Heating: It heats using a well-known method after exposure.
    [66] (4) Development: As a developing method after irradiation with radiation, use an alkaline aqueous solution as a developing solution to dissolve and remove unnecessary parts, and remove and remove only unirradiated parts. Examples of the developer include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia water, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, dimethyl Ethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabi Aqueous solutions of alkalis, such as cyclo [4.3.0] -5-nonane, can be used. Moreover, the aqueous solution which added an appropriate amount of water-soluble organic solvents, such as methanol and ethanol, and surfactant to the aqueous solution of the said alkalis can also be used as a developing solution.
    [67] The developing time depends on the type of each component, the blending ratio and the dry film thickness of the composition, but is usually 1 to 30 minutes, and the developing method may be any of a liquid method, a dipping method, a paddle method, and a spray developing method. . After development, washing with running water is carried out for 30 to 90 seconds and air dried using an air gun or the like, or dried in an oven.
    [68] The plating treatment method is not particularly limited, and various conventional plating methods can be adopted.
    [69] Example
    [70] Hereinafter, although an Example and a comparative example demonstrate this invention concretely, this invention is not limited to these examples. In addition, unless there is particular notice, a part represents a weight part and% represents a weight%.
    [71] <(A) Synthesis of alkali-soluble novolak resin>
    [72] Synthesis Example 1
    [73] m-cresol and p-cresol are mixed at a weight ratio of 60:40, formalin is added thereto, and condensed by a conventional method using an oxalic acid catalyst to obtain a cresol novolak resin. This resin is fractionated and the low molecular weight region is cut to obtain an alkali-soluble novolak resin having a weight average molecular weight of 15000. This resin is referred to as (A) novolak resin.
    [74] <(A) Synthesis of alkali-soluble acrylic resin>
    [75] Synthesis Example 2
    [76] After nitrogen-substituting the flask equipped with the stirrer, the refluxer, the thermometer, and the dropping bath, 200 g of propylene glycol methyl ether acetate was added as a solvent, and stirring was started. Then, the temperature of a solvent is raised to 80 degreeC. 0.5 g of 2,2'-azobisisobutyronitrile, 130 g of 2-methoxyethyl acrylate, 50.0 g of benzyl methacrylate, and 20.0 g of acrylic acid were added to a dropping tank, and a polymerization initiator (manufactured by Wako Pure Chemical Industries, Ltd., After stirring until a brand name V-65) is dissolved, this solution is added dropwise uniformly to the flask for 3 hours, and then polymerized at 80 ° C for 5 hours. Thereafter, it is cooled to room temperature to obtain an acrylic resin. This resin is referred to as (B) alkali-soluble acrylic resin.
    [77] Example 1
    [78] (A) 75 parts of novolac resin, (B) 15 parts of alkali-soluble acrylic resin, (C) 10 parts of hexamethoxymethylated melamine (trade name Nicaraq Mw-100 manufactured by Wako Chemical Co., Ltd.) as a crosslinking agent, (D) 0.3 part of the expressed acid generator is dissolved in 150 parts of propylene glycol methyl ether acetate, and then filtered using a membrane filter having a pore diameter of 1.0 μm to prepare a negative photoresist composition. The characteristic evaluation shown below is performed using this composition. The results are shown in Table 1.
    [79]
    [80] Example 2
    [81] A negative photoresist composition was prepared in the same manner as in Example 1 except that 70 parts of (A) novolac resin and (B) 20 parts of alkali-soluble acrylic resin were used. The characteristic evaluation shown below is performed using this composition. The results are shown in Table 1.
    [82] Example 3
    [83] A negative photoresist composition was prepared in the same manner as in Example 1 except that 80 parts of (A) novolak resin and 10 parts of (B) alkali-soluble acrylic resin were used. The characteristic evaluation shown below is performed using this composition. The results are shown in Table 1.
    [84] Example 4
    [85] (B) A negative photoresist composition was prepared in the same manner as in Example 1, except that 15 parts of alkali-soluble vinyl ethyl ether polymer obtained by using gaseous high temperature and high pressure polymerization reaction in the presence of a catalyst with ethyl vinyl ether as a catalyst. The characteristic evaluation shown below is performed using this composition. The results are shown in Table 1.
    [86] Example 5
    [87] (B) A negative photoresist composition was prepared in the same manner as in Example 1, except that 15 parts of an alkali-soluble vinyl methyl ether polymer obtained by gas phase high temperature and high pressure polymerization reaction in the presence of a catalyst in methyl plastic ether was used as a catalyst. The characteristic evaluation shown below is performed using this composition. The results are shown in Table 1.
    [88] Comparative Example 1
    [89] A negative photoresist composition was prepared in the same manner as in Example 1 except that the component (B) was not used. The characteristic evaluation shown below is performed using this composition. The results are shown in Table 2.
    [90] Comparative Example 2
    [91] 1,2-naphthoquinone diazide-4-sulfonylchloro per 1 mole of a known photoreaction initiator, i.e., a compound represented by the following formula (1), without using a (C) crosslinking agent and (D) an acid generator A negative photoresist composition was prepared in the same manner as in Example 1, except that 15 parts of the photoreaction initiator with which 2 mol of the lead was reacted were used. The characteristic evaluation shown below is performed using this composition. The results are shown in Table 2.
    [92]
    [93] Characteristic evaluation
    [94] Compatibility
    [95] The negative photoresist composition was mixed and stirred at room temperature for 12 hours, and the dissolution state immediately after stirring and 12 hours after stirring was visually observed. The dispersion state is determined by the following evaluation criteria.
    [96] ○: It was visually confirmed that the composition was uniformly dispersed after stirring for 12 hours.
    [97] (Triangle | delta): The composition disperse | distributed uniformly after stirring for 12 hours, but phase-separated by standing for a long time.
    [98] X: The composition is not uniformly dispersed after stirring for 12 hours.
    [99] Applicability
    [100] The negative photoresist composition was applied at 1000 rpm for 25 seconds on a 5 inch gold spattered wafer using a spinner and then heated on a hotplate at 110 ° C. for 6 minutes. The formed film surface was visually observed and applicability | paintability was judged by the following evaluation criteria.
    [101] (Circle): It is uniform without a nonuniformity in the obtained coating film.
    [102] X: There exists a nonuniformity, such as a pinhole and tempura, in the obtained coating film.
    [103] Status and Resolution
    [104] The negative photoresist composition was applied at 1000 rpm for 25 seconds using a spinner on a 5-inch silicon wafer, then prebaked at 110 ° C. for 6 minutes on a hot plate to form a coating film having a film thickness of about 20 μm. Subsequently, one coated substrate is divided using a stepper (Saturn Spectrum 3 Wafer Stepper, manufactured by Ultraterch Co., Ltd.) through a pattern mask for measuring the resolution, and UV exposure is performed step by step in a range of 200 to 2000 mJ / cm 2. After exposure, it heats at 110 degreeC for 6 minutes, and develops this with a developing solution (brand name PMER series, P-7G, the Toko Corporation). Thereafter, the mixture is washed with running water and blown with nitrogen to obtain a patterned cured product. This is observed under a microscope and resolution is determined by the following evaluation criteria.
    [105] (Circle): When the hole pattern of 5 micrometers angle is resolved by the exposure amount in any one of the above, and a residue is not observed.
    [106] X: The hole pattern of a 5 micrometer angle is not resolved, or a residue is not observed.
    [107] Plating solution
    [108] After the substrate having the patterned cured product obtained in the "development and resolution evaluation" was used as a test body for earthing treatment with oxygen plasma, it was immersed in a non-cyanide sulfurous acid gold plating solution at 70 DEG C for 90 minutes, washed with running water, and treated. Get Observe the state of the bumps and the patterned cured product formed on the object under test using an optical microscope or an electron microscope, and the resistance of the patterned cured product to the plating solution, the shape of the formed bumps, and the plating process of the patterned cured product. Judging by the evaluation criteria.
    [109] (Circle): It is good without a change in the state of the formed bump and patterned hardened | cured material in particular.
    [110] X: A crack, swelling and a defect generate | occur | produce in a patterned hardened | cured material, or the surface of a patterned hardened | cured material is rough.
    [111] Bump shape
    [112] The test object to be treated is obtained by the same operation as the "plating resistance evaluation", the state of the formed bumps and the patterned cured product is observed using an optical microscope or an electron microscope, and the shape of the formed bumps is determined by the following evaluation criteria.
    [113] (Circle): The shape of bump depends on pattern hardened | cured material, and is favorable.
    [114] X: The shape of bump does not depend on a hardened | cured material in a pattern, and swelling arises.
    [115] Peelability
    [116] Using a substrate having a patterned cured product obtained in the "development and resolution evaluation" as a test body, it was immersed for 5 minutes in a stripping solution (striper 710 manufactured by Tohyouka Co., Ltd.) stirred at room temperature, and then washed with running water to wash the patterned cured product. It was peeled off and observed by visual observation or optical microscope and evaluated by the following criteria.
    [117] (Circle): The residue of a pattern hardened | cured material is not observed.
    [118] X: The residue of a patterned hardened | cured material is observed.
    [119] Photosensitivity
    [120] A coating film of about 40 μm of the negative photoresist composition was formed on a 5 inch silicon wafer, and one coated substrate was formed by using a stepper (Saturn Spectrum 3 Wafer Stepper, manufactured by Ultralatech) through a pattern mask for measuring the resolution. And each step is UV exposed stepwise in the range of 200 to 10000 mJ / cm 2. This is developed with a developing solution (trade name PMER series, P-7G, manufactured by Tohwa Corporation). Thereafter, the mixture is washed with running water and blown with nitrogen to obtain a patterned cured product. This was observed with a microscope, and the exposure amount which 5 micrometer square holder pattern was resolved and a residue is not observed was measured.
    [121] Example 1Example 2Example 3Example 4Example 5 Compatibility○○○○○ Applicability○○○○○ Status and Resolution○○○○○ Plating solution○○○○○ Bump shape○○○○○ Peelability○○○○○ Photosensitive (mJ / ㎠)10001000100010001000
    [122] Comparative Example 1Comparative Example 2 Compatibility○○ Applicability○○ Status and Resolution○○ Plating solutionX (crack)○ Bump shape× (locked)○ Peelability○○ Photosensitive (mJ / ㎠)10005000
    [123] (Note) Although the comparative example 2 has no inferiority in each characteristic, photosensitivity is remarkably inferior.
    [124] According to the present invention, there is provided a negative photoresist composition for a thick film, a photoresist film, and a bump forming method using the same, which have high sensitivity and good plating resistance and are suitable for thick film formation which is preferable as a material for forming a bump.
    权利要求:
    Claims (9)
    [1" claim-type="Currently amended] (A) A novolak resin, (B) plasticizer, (C) crosslinking agent, and (D) acid generator are contained, The negative type photoresist composition for thick films.
    [2" claim-type="Currently amended] The negative type photoresist composition for thick films according to claim 1, wherein the component (A) is an alkali-soluble novolak resin.
    [3" claim-type="Currently amended] The negative type photoresist composition for thick films according to claim 1, wherein the component (B) is an alkali-soluble acrylic resin.
    [4" claim-type="Currently amended] The negative type photoresist composition for thick films according to claim 1, wherein the component (B) is an alkali-soluble vinyl resin.
    [5" claim-type="Currently amended] (C) Component is an alkoxy methylation amino resin, The thick film negative photoresist composition of Claim 1 characterized by the above-mentioned.
    [6" claim-type="Currently amended] 6. The negative type photoresist for thick film according to claim 5, wherein the alkoxymethylated amino resin is at least one member selected from methoxymethylated melamine resin, ethoxymethylated melamine resin, propoxymethylated melamine resin and butoxymethylated melamine resin. Composition.
    [7" claim-type="Currently amended] The thick film negative photoresist composition according to claim 1, wherein the component (D) is a triazine compound.
    [8" claim-type="Currently amended] The photoresist film of the film thickness of 5-100 micrometers formed by apply | coating and drying the negative photoresist composition for thick films as described in any one of Claims 1-7 on a base material.
    [9" claim-type="Currently amended] The negative type photoresist composition for thick films of any one of Claims 1-7 is apply | coated on the board | substrate of an electronic component, and the obtained coating film is irradiated, heated, and developed through the mask of a predetermined pattern, and then Bump forming method characterized in that the plating process.
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    同族专利:
    公开号 | 公开日
    US7063934B2|2006-06-20|
    TW594390B|2004-06-21|
    US20060035169A1|2006-02-16|
    KR20050089754A|2005-09-08|
    US20030064319A1|2003-04-03|
    US20060035170A1|2006-02-16|
    US7419769B2|2008-09-02|
    DE10222387A1|2002-11-28|
    US7129018B2|2006-10-31|
    KR100587246B1|2006-06-08|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-05-21|Priority to JP2001151131
    2001-05-21|Priority to JPJP-P-2001-00151131
    2002-05-17|Application filed by 도오꾜오까고오교 가부시끼가이샤
    2003-01-23|Publication of KR20030006969A
    优先权:
    申请号 | 申请日 | 专利标题
    JP2001151131|2001-05-21|
    JPJP-P-2001-00151131|2001-05-21|
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