• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Disclosed is a probe chuck provided in a DS facility. By forming at least two vacuum holes on each vacuum line of the probe chuck surface on which the wafer is seated, it is possible to improve the deterioration of the adsorption state of the wafer due to the decrease in the vacuum pressure.
    公开号:KR20030001842A
    申请号:KR1020010037649
    申请日:2001-06-28
    公开日:2003-01-08
    发明作者:박진선
    申请人:삼성전자 주식회사；
    IPC主号:
    专利说明:

    Probe chuck in electrical die sorting apparatus
    [9] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrical die sorting (EDS) process facility, and more particularly, to a probe chuck for fixing a wafer by a vacuum adsorption method.
    [10] In general, fabrication of a semiconductor device includes a fabrication process of forming a pattern on a wafer and an assembly process of assembling the wafer on which the pattern is formed into unit chips. Before proceeding with the assembly process, an Electrical Die Sorting (EDS) process for inspecting electrical characteristics of each chip constituting the wafer is performed.
    [11] The DS process can identify defective chips among the chips constituting the wafer, thereby regenerating the repairable chips and removing the non-renewable chips early, thereby reducing the time and cost for subsequent assembly processes and inspections. Can be.
    [12] 1 is a view schematically showing a configuration of a general DS process equipment.
    [13] As shown in FIG. 1, the ID process facility basically includes a probe chuck 100, a probe needle 130, and a probe card 120. The probe chuck 100 in which the wafer is located is movable up, down, left, and right. The probe needle 130 included in the probe card 120 is in contact with a pad portion of each chip constituting the wafer 110 positioned on the probe chuck 100, and an electrical signal is transmitted to a circuit inside the chip so that the chip Check the electrical quantity and defects.
    [14] The wafer 110 for the inspection needs to be loaded with the probe chuck 100 to the inspection position and then adsorbed and fixed so as not to flow on the probe chuck 100.
    [15] 2 is a view showing an overview of the probe chuck 100. Some components constituting the probe chuck 100 are omitted. The plurality of concentric circles shown on the surface of the probe chuck 100 represent the vacuum line 140. The vacuum line 140 forms a concentric groove on the surface of the probe chuck 100, and is a portion where the wafer is substantially adsorbed with the probe chuck 100.
    [16] 3 is a view showing the actual appearance of the upper surface of the probe chuck 100. As shown, a plurality of vacuum lines 140 are formed on the surface, and one vacuum hole 150 is formed on each vacuum line 140. When the wafer is loaded on the probe chuck 100, air between the wafer and each vacuum line 140 of the probe chuck 100 is drawn out to each vacuum hole 150. The space between the wafer and each vacuum line 140 is in a vacuum state so that the wafer is adsorbed on the surface of the probe chuck 100.
    [17] However, there are cases where the vacuum pressure on the surface of the probe chuck becomes small or clogged due to an external foreign matter or the like and the vacuum pressure becomes weak. Since only one vacuum hole is formed in each vacuum line in the conventional probe chuck, when the vacuum pressure of some vacuum holes is weakened, the adsorption state of the wafer is considerably lowered.
    [18] Therefore, the technical problem to be achieved by the present invention is to provide a probe chuck that can improve the deterioration of the adsorption state of the wafer due to the decrease in the vacuum pressure.
    [1] 1 is a view schematically showing a configuration of a general DS process equipment.
    [2] 2 is a schematic diagram of a probe chuck.
    [3] 3 is an actual view of the probe chuck upper surface according to the prior art.
    [4] 4 is an actual view of the upper surface of the probe chuck according to the present invention.
    [5] Explanation of the symbols of the main parts of the drawings
    [6] 100-probe chuck 110-wafer
    [7] 120-probe card 130-probe needle
    [8] 140, 200-vacuum line 150, 210-vacuum hole
    [19] In order to achieve the technical object of the present invention, the probe chuck of the present invention includes a plurality of vacuum lines on the surface and at least two vacuum holes formed on each vacuum line. Each vacuum hole on each vacuum line is preferably formed symmetrically with each other.
    [20] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are intended to complete the present disclosure and to provide a more complete description of the present invention to those skilled in the art. Elements denoted by the same reference numerals in the drawings means the same components.
    [21] Hereinafter, an embodiment of the present invention will be described with reference to FIG. 4.
    [22] 4 is an actual view of the upper surface of the probe chuck according to the present invention.
    [23] In FIG. 4, a plurality of vacuum lines 200 are formed on the surface. Unlike the conventional drawing (FIG. 3), two vacuum holes 210 are formed on each vacuum line 200. Even if some of the vacuum holes 210 are clogged by the foreign matter or the vacuum holes 210 become smaller, the decrease in the vacuum pressure is reduced as compared with when the vacuum holes 210 are drilled one by one in each line.
    [24] On the other hand, as shown in the drawing, two vacuum holes 210 on each vacuum line 200 are preferably formed symmetrically with each other. When extracting air between the wafer and the vacuum line 200, it is more efficient to form a uniform vacuum.
    [25] Therefore, since the wafer is sucked and fixed without flow on the probe chuck, it is possible to stably perform the die inspection.
    [26] In the present embodiment, a probe chuck in which two vacuum holes are formed in each vacuum line has been described, but it is natural that two or more vacuum holes can be formed.
    [27] As described above, the probe chuck of the present invention forms at least two or more vacuum holes on each vacuum line of the surface on which the wafer is seated, thereby improving the deterioration of the adsorption state of the wafer due to the decrease in the vacuum pressure. Can be. Thus, since the wafer is sucked and fixed without flow on the probe chuck, the die inspection can be performed stably.
    权利要求:
    Claims (2)
    [1" claim-type="Currently amended] A plurality of vacuum lines formed on the surface; And
    And at least two vacuum holes formed on each of the vacuum lines.
    [2" claim-type="Currently amended] The probe chuck of claim 1, wherein each vacuum hole on each vacuum line is formed symmetrically with each other.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-06-28|Application filed by 삼성전자 주식회사
    2001-06-28|Priority to KR1020010037649A
    2003-01-08|Publication of KR20030001842A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020010037649A|KR20030001842A|2001-06-28|2001-06-28|Probe chuck in electrical die sorting apparatus|
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