Passive devices and modules for transceiver and manufacturing method thereof

专利摘要:
The present invention relates to a passive element for transmitting and receiving, an integrated module and a method of manufacturing the same. Passive device for transmitting and receiving, the semiconductor or dielectric substrate; At least one capacitor formed on the first surface of the substrate; At least one inductor formed on a second side opposite the first surface; A via hole penetrating the substrate; A metal electrode formed in the via hole to electrically connect a capacitor on the first surface and an inductor on the second surface; RF signal lines for the inductor and capacitor; An RF ground formed on the substrate and positioned isolated from the signal line; And a packaging substrate coupled to the first or second surface and protecting the structure formed on the first or second surface. According to the present invention, it contributes to the miniaturization of the communication terminal by reducing the mounting area, and has the advantage of improving the communication quality by reducing the insertion loss of the inductor, etc. by using the MEMS technology, according to the present invention the via hole is easily formed and the via hole There is an advantage that can be adjusted arbitrarily the exposure size.
公开号:KR20020095728A
申请号:KR1020010033911
申请日:2001-06-15
公开日:2002-12-28
发明作者:송인상
申请人:삼성전자 주식회사；
IPC主号:

专利说明:

Passive devices for transmitting and receiving, integrated modules thereof and a method for manufacturing the same
[14] The present invention relates to a passive device for transmitting and receiving, an integrated module, and a method of manufacturing the same, and more specifically, by using a MEMS (Micro Electro Mecaanical System) technology, a capacitor, an inductor, and the like, which are passive devices, are formed in upper and lower portions of a circuit board. It relates to a passive device for transmitting and receiving, an integrated module and a manufacturing method thereof.
[15] With the development of wireless communication technology, technology development for the call quality and miniaturization of mobile communication terminals has been pursued. In addition, a wireless communication terminal transmits and receives a Code Division Multiple Access (CDMA) method using a 900 MHz band frequency and a Personal Communication System (PCS) method using a 1.8 GHz band frequency. It has been developed by using the frequency of several bands differently. Accordingly, as the transmission / reception system using multiple bands is used, the miniaturization of the wireless communication terminal is further required.
[16] In order to miniaturize a personal mobile communication terminal, a priority is to reduce the area of passive elements that occupy the largest area in the terminal. The passive devices used in the conventional mobile communication terminals are mostly individual devices having individual shapes, and the area occupied on the substrate is a factor that increases the chip mounting area and the manufacturing cost. In particular, the inductor not only occupies a large area but also has a problem of degrading communication quality.
[17] Accordingly, the present invention has been made to improve the above problems, and an object of the present invention is to provide a passive device for transmitting and receiving and an integrated module thereof, in which passive devices are integrated on the upper and lower surfaces of one substrate using MEMS technology.
[18] Another object of the present invention is to provide a method of manufacturing the passive element and its integrated module.
[1] 1A and 1B are schematic cross-sectional and partial perspective views of a high pass filter which is a passive element for transmitting and receiving according to a first embodiment of the present invention;
[2] FIG. 2 is an equivalent circuit diagram of the high pass filter shown in FIGS. 1A and 1B;
[3] 3 is a schematic cross-sectional view of a low pass filter which is a passive element for transmitting and receiving according to a second embodiment of the present invention;
[4] 4 is an equivalent circuit diagram of the low pass filter shown in FIG.
[5] 5 is an equivalent circuit diagram of a band pass filter which is a passive element for transmitting and receiving according to a third embodiment of the present invention;
[6] 6 is an equivalent circuit diagram of a passive element integrated module for transmitting and receiving according to a fourth embodiment of the present invention;
[7] 7 is a view for explaining a fourth embodiment of the present invention;
[8] 8A to 8E are diagrams for explaining a method of manufacturing a transmitting and receiving passive element and an integrated module thereof according to the present invention shown in FIGS. 1A and 1B;
[9] Explanation of symbols on the main parts of the drawings
[10] 110,210,310: substrates 120,130,220,320,330: capacitors
[11] 140,230,240,340: Inductor 150,250,350: Via Hole
[12] 160,260,360: packaging substrate 184: RF IC
[13] C: Capacitor L: Inductor
[19] In order to achieve the above object, the passive element for transmitting and receiving of the present invention comprises a semiconductor or dielectric substrate; At least one capacitor formed on the first surface of the substrate; At least one inductor formed on a second side opposite the first surface; A via hole penetrating the substrate; A metal electrode formed in the via hole to electrically connect a capacitor on the first surface and an inductor on the second surface; RF signal lines for the inductor and capacitor; An RF ground formed on the substrate and positioned isolated from the signal line; And a packaging substrate coupled to the first or second surface and protecting the structure formed on the first or second surface.
[20] In order to achieve another object of the present invention, the passive element integrated module for transmitting and receiving of the present invention comprises a semiconductor or dielectric substrate; Capacitors formed on the first surface of the substrate; Inductors formed on a second side opposite the first surface; A via hole penetrating the substrate; A metal electrode formed in the via hole to electrically connect a capacitor on the first surface and an inductor on the second surface; RF signal lines for the inductor and capacitor; An RF ground formed on the substrate and positioned isolated from the signal line; And a packaging substrate coupled to the first or second surface and protecting the structure formed on the first or second surface.
[21] A radio frequency selector composed of a capacitor, an inductor, and signal lines, the high frequency filter comprising a high pass filter and a low pass filter; A duplexer for transmitting a signal to the radio frequency selector and including a transmission filter configured as a band pass filter, and a reception filter receiving a signal from the radio frequency selector and configured as a band pass filter; A transmission band filter for transmitting a signal to the transmission filter through a power amplifier; And a reception band filter receiving the signal from the reception filter through a low noise amplifier.
[22] According to another aspect of the present invention, there is provided a method for manufacturing a passive device for transmitting and receiving devices and a passive device integrated module according to the present invention, comprising: (a) forming a well for a via hole having a bottom by patterning a second surface of the substrate; (B) forming an inductor on a second surface of the substrate and forming electrodes on inner walls and bottoms of the wells for the via holes; (C) etching the first surface of the packaging substrate; (D) bonding the first surface of the packaging substrate to the second surface of the substrate; (E) planarizing the first surface opposite to the second surface of the substrate after step (b) to expose an electrode formed on the bottom of the well for the via hole onto the first surface; And (f) forming an integrated circuit including a capacitor on the first surface of the substrate after the step (e).
[23] Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment according to the passive element and module for transmitting and receiving the present invention and its manufacturing method.
[24] 1A and 1B are schematic cross-sectional views and a partial perspective view of a high pass filter (HPF) which is a passive element for transmitting and receiving according to a first embodiment of the present invention, and FIG. 2 is a high pass shown in FIGS. 1A and 1B. Equivalent circuit diagram of a filter.
[25] Referring to the drawing, in the basic circuit of the high pass filter, as shown in FIG. 2, one inductor L is connected in parallel between two capacitors C1 and C2 connected in series. 1A and 1B show a structure in which a high pass filter structure according to the equivalent circuit diagram is stacked on one substrate 110. The first capacitor 120 and the second capacitor 130 are connected in series on the substrate 110, and an inductor 140 is formed under the substrate 110. The inductor 140 is connected to an intermediate connection terminal between the first 120 and the second capacitor 130 on the substrate 110 through an electrode 152 formed in the via hole 150. A cavity 162, which is a space for accommodating the inductor 140, is formed below the substrate 110, and the packaging substrate 160 on which the shielding metal 164 is formed is coupled. The substrate 110 and the packaging substrate 160 are formed of a semiconductor or a dielectric. The packaging substrate 160 may be coupled to protect the capacitors 120 and 130 on the substrate 110 instead of being coupled to the bottom of the substrate 110 as a variation.
[26] The inductor 140 is manufactured by MEMS technology, and the electric conductor 142 of the inductor 140 is suspended from the substrate 110 or formed in a predetermined area corresponding to the electric conductor 142 on the substrate 110. (Not shown) and an air layer or dielectric is further formed on the electric conductor 142.
[27] The first capacitor 120 includes a second electrode 126 serving as a bottom electrode formed on the substrate 110, a first electrode 122 serving as an upper electrode corresponding to an upper side thereof, and a first dielectric interposed therebetween ( 124). In the second capacitor 130, the second electrode extends to form the upper electrode 132, and the bottom electrode, which is the third electrode 136, is formed, and a second dielectric 134 is interposed therebetween. One side of the first electrode 122 is connected to the input signal line 112, one side of the upper electrode 132 is connected to the output signal line 114, and the ground 116 is used for transmitting the RF signals of the signal lines 112 and 114. ) Is formed on side surfaces of the signal lines 112 and 114.
[28] In the high-pass filter having the structure, when a predetermined frequency signal is input from the input signal line 112, the signal is transmitted to the output signal line 114 by passing through the first 120 and the second capacitor 130. The signal is emitted via the inductor 140 to ground 116.
[29] 3 is a schematic cross-sectional view of a low pass filter (LPF) that is a passive element for transmitting and receiving according to a second embodiment of the present invention, and FIG. 4 is an equivalent circuit diagram of the low pass filter shown in FIG.
[30] Referring to the drawing, in the basic circuit of the low pass filter, one capacitor C is connected in parallel between two inductors L1 and L2 as shown in FIG. 3 shows a structure in which a low pass filter according to the equivalent circuit diagram is stacked on one substrate 210. The first inductor 230 and the second inductor 240 are connected in series under the substrate 210, and a capacitor 220 is formed on the substrate 210. The capacitor 220 is connected to the intermediate connection terminal of the first 230 and the second inductor 240 under the substrate 210 through the electrode 252 formed in the via hole 250. Below the substrate 210, a cavity 262, which is a space for accommodating the inductors 230 and 240, is formed, and a packaging substrate 260 having a shielding metal 264 formed thereon is coupled thereto. The substrate 210 and the packaging substrate 260 are formed of a semiconductor or a dielectric. The packaging substrate 260 may be coupled to protect the capacitor 220 on the substrate 210 instead of being coupled to the bottom of the substrate 210 as a variant.
[31] The inductors 230 and 240 are made of MEMS technology, and the electrical leads 232 and 242 of the inductors 230 and 240 are formed on a dielectric (not shown) suspended from the substrate 210 or formed on the substrate 210. An air layer or dielectric is further formed on the conductive lines 232 and 242.
[32] The capacitor 220 includes a bottom electrode 226 formed on the substrate 210, an upper electrode 222 positioned corresponding to the upper side thereof, and a dielectric 224 interposed therebetween.
[33] The low pass filter of the structure passes through the first 230 and the second inductor 240 when a predetermined frequency signal is input from the input signal line 212 connected to one side of the first inductor 230 and the second inductor 230. The signal is transmitted to the output signal line 214 connected to the other side of the signal, and a signal of a predetermined frequency or more is emitted through the capacitor 220 to the ground (not shown).
[34] FIG. 5 is an equivalent circuit diagram of a bandpass filter (BPF) which is a passive element for transmitting and receiving according to a third embodiment of the present invention.
[35] Referring to the drawings, a plurality of capacitors (C1, C2, C3, C4) are connected in series, and other capacitors (C5, C6, C7) and inductors between the capacitors (C1, C2, C3, C4). (L1, L2, L3) are connected in parallel. When the circuit diagram is stacked on one substrate, capacitors C1, C2, C3, C4, C5, C6, and C7 are formed on the substrate, and the capacitors C1, C2, C3, C4, C5, C6, and C7 are formed. Inductors L1, L2, and L3 connected to each other may be formed under the substrate, and the connections thereof may be made through electrodes formed in the via holes (reference numerals 152 of FIGS. 1A and 1B and reference numeral 252 of FIG. 3). Below the substrate, a cavity is formed, a space for accommodating the inductor, and a packaging substrate on which a shielding metal is formed is joined. The substrate and packaging substrate are formed of a semiconductor or dielectric.
[36] The inductors L1, L2, L3 are manufactured by MEMS technology, and the electrical conductors of the inductors L1, L2, L3 are suspended from the substrate or formed on a dielectric (not shown) formed on the substrate and formed on the electrical conductor. An air layer or dielectric is further formed.
[37] When the frequency signal is input to one side of the first capacitor, the band pass filter of the structure is filtered through a circuit of capacitors and inductors, and the signal is transmitted to the other output signal line.
[38] FIG. 6 is an equivalent circuit diagram of a passive element integrated module for transmitting and receiving according to a fourth embodiment of the present invention. A module usable in a dual frequency band of a PCS system having a transmit / receive frequency of 1.8 GHz and a CDMA system having a transmit / receive frequency of 0.9 GHz are shown. It is shown.
[39] Referring to the drawings, the passive element integrated module for transmitting and receiving the radio frequency selector (S) for distinguishing the frequency signal of the transmitting and receiving antenna (ANT), the signal received from the antenna (ANT) and the signal to be transmitted to the antenna (ANT) for switching Transmission band filters B3 and B7 for filtering transmission signals to the duplexers D1 and D2 and duplexers D1 and D2, and reception band filters D4 and D8 for filtering reception signals from the duplexers D1 and D2. It is composed.
[40] The radio frequency selector S includes a high pass filter HPF and a low pass filter LPF, and each of the filters HPF and LPF is as described in the first and second embodiments. The duplexers D1 and D2 include transmission filters B1 and B5 and reception filters B2 and B6 constituted of the bandpass filters described in the third embodiment.
[41] The structure in which the circuit diagram of FIG. 6 is stacked on one substrate is formed by connecting a plurality of capacitors on the substrate as in the above-described embodiment, and inductors connected to the connection of the capacitors are formed below the substrate. The capacitor is connected to the capacitors on the substrate through an electrode formed in the via hole. Therefore, capacitors and inductors are implemented in MEMS technology with all passive components connected to each other. The passive element module having the above structure is connected to an external IC circuit such as a conversion circuit between an audio signal and an electric circuit, a modulation circuit to a high-parking signal, and an amplification circuit to serve as a wireless transceiver.
[42] The operation of the transmission / reception module having the above structure will be described in detail with reference to FIG. 6. First, the transmission process will be described. The signal to be transmitted from the transmitting end Tx is filtered through the transmission band filters B3 and B7 to be amplified by the power amplifier PA to transmit the transmission filters B1 and B5 of the duplexers D1 and D2. The filter is filtered by the high pass filter (HPF) or low pass filter (LPF) to go to the antenna (ANT) and transmitted to the outside.
[43] Next, in the reception process, the reception path is selected by the radio frequency selector S according to the frequency of the signal received through the antenna ANT. Next, the signal filtered through the reception filters B2 and B6 of the duplexers D1 and D2 is amplified by a low noise amplifier (LNA). The amplified signal is filtered through the reception band filters B4 and B8 and output to the reception terminal Rx.
[44] FIG. 7 is a diagram illustrating that an RF IC is provided on a substrate of the high pass filter of FIG. 1B to specifically describe a fourth embodiment of the present invention. The same reference numerals are used for the same components as those of the first embodiment. The detailed description is omitted.
[45] Referring to the drawings, two capacitors are formed on a substrate, and an RF integrated circuit (RF IC) 184 connected to a signal line 182 connected to an intermediate end of the capacitor is provided. The RF IC 184 is any one of an oscillator, a mixer, a low noise amplifier (LNA), or a driver amplifier and consists of a resistor, a capacitor, and an inductor. The RF IC 184 may be a conventional discrete device, or at least one capacitor (not shown) is formed on the substrate 110 and at least one inductor (not shown) is formed below the substrate. In the same manner as in the exemplary embodiment, a circuit similar to a conventional discrete device may be configured through an electrode formed in a via hole.
[46] 8A to 8E illustrate a manufacturing method of stacking a high pass filter on the upper and lower sides of a substrate in order to explain the manufacturing method of the transmitting / receiving passive element and the integrated module thereof according to the present invention.
[47] First, as shown in FIG. 8A, the second surface 304 of the substrate 300 is patterned to form a well for a via hole 350 having a bottom.
[48] Next, an inductor 340 is formed on the second surface 304 of the substrate using MEMS technology as shown in FIG. 8B, and electrodes 352 are formed on inner walls and bottoms of the wells for the via holes 350. . At this time, the sacrificial layer is formed using the sacrificial layer so that the electric conductor 342 of the inductor 340 floats on the second surface 304 of the substrate 310, and then the sacrificial layer is removed. .
[49] Alternatively, after forming a dielectric (not shown) on a predetermined area corresponding to the electrical conductor 342 of the inductor 340 on the second surface 304 of the substrate 310, the electrical conductor on the dielectric 342 may be formed followed by an air layer or dielectric on the metal 342 line.
[50] After etching the cavity 362 to accommodate the inductor 340 using a separate packaging substrate 360, a shielding metal 364 is formed on the etched packaging substrate 360 as shown in FIG. 8C. By bonding to the second surface 304 of the substrate 310.
[51] Next, the top of the first surface 302 of the substrate 310 is planarized using a lapping machine (not shown), and the electrode 352 formed at the bottom of the well for the via hole 350 in the above-described step is Exposed on first surface 302 of 310 (see FIG. 8D). By the planarization process, the size of the via hole 350 exposed on the first surface 302 of the substrate 310 can be easily adjusted.
[52] Next, an integrated circuit including capacitors 320 and 340 is formed on the first surface 302 of the substrate 310 as shown in FIG. 8E.
[53] If the manufacturing method is extended, the passive element integrated device and the module for transmitting and receiving can be manufactured in the same manner.
[54] As described above, the passive element and the integrated module according to the present invention contribute to the miniaturization of the communication terminal by reducing the mounting area, and by using the MEMS technology, there is an advantage of improving the communication quality by reducing the insertion loss of the inductor. According to the method of the present invention, there is an advantage in that the via hole is easily formed and the size of the via hole can be arbitrarily adjusted.
[55] Although the present invention has been described with reference to the embodiments with reference to the drawings, this is merely exemplary, it will be understood by those skilled in the art that various modifications and equivalent embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined only by the appended claims.

权利要求:
Claims (23)
[1" claim-type="Currently amended] Semiconductor or dielectric substrates;
At least one capacitor formed on the first surface of the substrate;
At least one inductor formed on a second side opposite the first surface;
A via hole penetrating the substrate;
A metal electrode formed in the via hole to electrically connect a capacitor on the first surface and an inductor on the second surface;
RF signal lines for the inductor and capacitor;
An RF ground formed on the substrate and positioned isolated from the signal line;
And a packaging substrate coupled to the first surface or the second surface and protecting the structure formed on the first surface or the second surface.
[2" claim-type="Currently amended] The method of claim 1,
The inductor is,
Passive device for transmitting and receiving, characterized in that formed on the dielectric suspended on the substrate or formed on the substrate.
[3" claim-type="Currently amended] The method of claim 2,
Passive device for transmitting and receiving, characterized in that the air layer or a dielectric further formed on the inductor.
[4" claim-type="Currently amended] The method of claim 1,
The packaging substrate is a passive element for transmitting and receiving, characterized in that the semiconductor or dielectric substrate.
[5" claim-type="Currently amended] The method of claim 1,
A cavity is formed in the packaging surface of the packaging substrate, and a passive element for transmitting and receiving, characterized in that the shielding metal is formed in the contact portion with the substrate.
[6" claim-type="Currently amended] The method of claim 1,
And two capacitors and one inductor, wherein the inductor is connected in parallel with the capacitor through the via hole to form a high pass filter (HPF).
[7" claim-type="Currently amended] The method of claim 1,
And a capacitor and two inductors, wherein the capacitor is connected in parallel with the inductor through the via hole to form a low pass filter (LPF).
[8" claim-type="Currently amended] The method of claim 1,
The capacitors include a plurality of capacitors connected in series and capacitors connected in parallel between the capacitors, and the inductor includes inductors connected in parallel with the capacitors connected in parallel through the via holes. Passive device for transmitting and receiving, characterized in that forming a.
[9" claim-type="Currently amended] Semiconductor or dielectric substrates;
Capacitors formed on the first surface of the substrate;
Inductors formed on a second side opposite the first surface;
A via hole penetrating the substrate;
A metal electrode formed in the via hole to electrically connect a capacitor on the first surface and an inductor on the second surface;
RF input / output signal lines for the inductor and capacitor;
An RF ground formed on the substrate and positioned isolated from the signal line;
And a packaging substrate coupled to the first or second surface and protecting the structure formed on the first or second surface.
The circuit is composed of the capacitor, the inductor and the signal lines
A radio frequency selector composed of a high pass filter and a low pass filter;
A duplexer for transmitting a signal to the radio frequency selector and including a transmission filter configured as a band pass filter, and a reception filter receiving a signal from the radio frequency selector and configured as a band pass filter;
A transmission band filter for transmitting a signal to the transmission filter through a power amplifier;
And a reception band filter for receiving a signal from the reception filter through a low noise amplifier.
[10" claim-type="Currently amended] The method of claim 9,
At least one RF IC connected to the capacitors is further formed on the first surface of the substrate.
[11" claim-type="Currently amended] The method of claim 10,
The RF IC may be an individual element or an electrode formed in at least one capacitor formed on the first surface of the substrate and at least one inductor formed on the second surface of the substrate, and a via hole electrically connecting the capacitor and the inductor. Passive device integrated module for transmitting and receiving, characterized in that the device consisting of a circuit through.
[12" claim-type="Currently amended] The method of claim 9,
The inductor is,
Passive element integrated module for transmitting and receiving, characterized in that formed on the substrate suspended from the substrate or formed on the substrate.
[13" claim-type="Currently amended] The method of claim 12,
Passive device integrated module for transmitting and receiving, characterized in that the air layer or a dielectric is further formed on the inductor.
[14" claim-type="Currently amended] The method of claim 9,
Passive device integrated module for transmitting and receiving, characterized in that the packaging substrate is a semiconductor or dielectric substrate.
[15" claim-type="Currently amended] The method of claim 9,
Cavity is formed in the packaging surface of the packaging substrate, the passive element integrated module for transmitting and receiving, characterized in that the shielding metal is formed in the contact portion with the substrate.
[16" claim-type="Currently amended] The method of claim 9,
And the high pass filter (HPF) comprises two capacitors and one inductor, and the inductor is connected in parallel with the capacitor through the via hole.
[17" claim-type="Currently amended] The method of claim 9,
And the low pass filter (LPF) comprises one capacitor and two inductors, and the capacitors are connected in parallel with the inductor through the via holes.
[18" claim-type="Currently amended] The method of claim 9,
The band filter BPF includes the capacitors and the inductors, the capacitors are a plurality of capacitors connected in series, capacitors connected in parallel between the capacitors, and the inductor is connected in parallel through the via hole. Passive device integrated module for transmitting and receiving, characterized in that the inductors are connected in parallel with the connected capacitor.
[19" claim-type="Currently amended] (A) patterning the second side of the substrate to form a well for the via hole having a bottom;
(B) forming an inductor on a second surface of the substrate and forming electrodes on inner walls and bottoms of the wells for the via holes;
(C) etching the first surface of the packaging substrate;
(D) bonding the first surface of the packaging substrate to the second surface of the substrate;
(E) planarizing the first surface opposite to the second surface of the substrate after step (b) to expose an electrode formed on the bottom of the well for the via hole onto the first surface; And
And (f) forming an integrated circuit including a capacitor on the first surface of the substrate after the step (e).
[20" claim-type="Currently amended] The method of claim 15,
And (d) bonding the first surface of the packaging substrate to the second surface of the substrate after the (bar) step.
[21" claim-type="Currently amended] The method of claim 15,
The step (c) further comprises the step of forming a shielding metal on the etched first surface; Passive device for transmitting and receiving and passive device integrated module manufacturing method further comprising a.
[22" claim-type="Currently amended] The method of claim 15,
And (b) using the sacrificial layer to float the electrical conductor of the inductor above the second surface of the substrate.
[23" claim-type="Currently amended] The method of claim 15,
Forming the inductor of the step (b),
Forming a dielectric in a predetermined area on the substrate;
Forming an electrical lead of the inductor on the dielectric;
Forming an air layer or a dielectric on the electric wire; Passive device for transmitting and receiving, characterized in that it comprises a passive device integrated module manufacturing method.

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同族专利:

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公开号 | 公开日

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US6649998B2|2003-11-18|

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JP2003142592A|2003-05-16|

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2001-06-15|Application filed by 삼성전자 주식회사

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2001-06-15|Priority to KR20010033911A

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2002-12-28|Publication of KR20020095728A

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2003-05-09|Application granted

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2003-05-09|Publication of KR100382765B1

优先权:

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申请号 | 申请日 | 专利标题

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KR20010033911A|KR100382765B1|2001-06-15|2001-06-15|Passive devices and modules for transceiver and manufacturing method thereof|