• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention discloses a method for forming an insulating film of a semiconductor device capable of improving gap-filled capability and flatness in forming an insulating film filling a structure having a high surface level by forming a metal electrode for a word line or the like. do. The disclosed method comprises providing a substrate having a step on a surface, and spin coating a coating material mixed with a solvent and a resin having an aprotic property to cover the stepped surface on the substrate to form a coating film. And forming an insulating film by first heat treating the coating film under a wet (H 2 / O 2 ) atmosphere without exposure to the atmosphere, and curing the insulating film by a second heat treatment under a wet (H 2 / O 2 ) atmosphere. Steps.
    公开号:KR20020083571A
    申请号:KR1020010022948
    申请日:2001-04-27
    公开日:2002-11-04
    发明作者:오수진
    申请人:주식회사 하이닉스반도체；
    IPC主号:
    专利说明:

    Method for forming insulation layer of semiconductor device
    [3] The present invention relates to a method for forming an insulating film, and more particularly, in forming an insulating film filling a structure having a step by forming a metal electrode for a word line, it is possible to improve gap-filled capability and flatness. A method of forming an insulating film of a semiconductor device.
    [4] A problem in the yield reliability of the device is disconnection in the step. On the surface with a high level of difference, the metal electrode (for word line formation) is partially disconnected or causes atom movement in the molecule by current concentration. Essentially, it would be ideal if such steps could be eliminated to improve the gap fill capability and processing could be achieved with a flat insulating film. Currently, many researches on the insulating film have been conducted to improve the gap fill capability and flatness.
    [5] Conventionally, by coating a resin by spin coating a resin on a substrate having a structure in which a plurality of valleys and acids are formed on a surface due to the formation of a metal electrode for a word line, baking is performed at a temperature range of 800 ° C. or higher. Heat treatment processes such as (bake) and curing (curing) were carried out to harden the coating film, thereby gap-filling the portions corresponding to the bones and flattening the surface.
    [6] The word line metal electrode forming process is performed at a temperature of about 700 ℃. In addition, the coating layer may increase the density by adding a material such as boron or phosphorus to the resin.
    [7] However, in the insulating film forming method according to the prior art, unlike the metal line forming process for the word line proceeds at a temperature around 700 ℃, the pores in the gap fill region by a subsequent high heat treatment process of 800 ℃ or more There was a problem that the gap fill capability and flatness of the insulating film is lowered.
    [8] Accordingly, an object of the present invention is to provide a method for forming an insulating film of a semiconductor device capable of improving the gap fill capability and flatness of the insulating film.
    [1] 1A to 1C are cross-sectional views illustrating a method of forming an insulating film in a semiconductor device according to the present invention.
    [2] 2 is a structural diagram of a coating material according to the present invention.
    [9] According to an aspect of the present invention, there is provided a method of forming an insulating film of a semiconductor device, comprising: providing a substrate having a step on a surface thereof, and mixing a solvent and a resin having an aprotic property to cover the stepped surface on the substrate; Spin coating the coating material to form a coating film, first heat treating the coating film under a wet (H 2 / O 2 ) atmosphere without exposure to air, and forming an insulating film under a wet (H 2 / O 2 ) atmosphere. And curing the insulating film by a second heat treatment.
    [10] Hereinafter, a method of forming an insulating film of a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.
    [11] 1A to 1C are cross-sectional views illustrating a method of forming an insulating film of a semiconductor device according to the present invention, and FIG. 2 is a structural diagram of a coating material according to the present invention. A diagram showing hydrogen bonding between O ions in a solvent having aprotic properties.
    [12] In the method of forming an insulating film of a semiconductor device according to the present invention, as shown in FIG. 1A, first, on a substrate 10 having a surface step, as shown in FIG. 2, resin and aprotic characteristics are shown. The coating material mixed with a solvent (R) having a spin coating method is applied at room temperature to form a coating film 14. The coating film 14 is applied to cover the plurality of acids 14a and the valleys 14b so that the surface is flat.
    [13] The substrate 10 has a plurality of acids 14a and valleys 14b formed on a surface thereof, and has a stepped structure. The mountains 14a refer to a metal electrode (word line), and the valleys 14b represent acid ( The space between 14a) and the mountain refers to the recessed portion relative to the mountain 14a.
    [14] As mentioned above, the coating material of the present invention is a mixture of a resin (Rin) and a solvent (R) having an aprotic property, and the solvent (R) having an aprotic property has an electronegativity at the end of the molecular structure. Contains high atoms. Examples of the high electronegativity may include oxygen and nitrogen, and FIG. 2 illustrates that an oxygen atom is included at the end of the molecular structure of the solvent R having an aprotic property.
    [15] As shown in FIG. 2, the coating material of the present invention forms a hydrogen bond with the O ion of the solvent (R) in which the H of the Si—H bond in the resin has an aprotic property. As the hydrogen bond has a high binding energy, it has a strong bonding force between 0-H.
    [16] In the coating film of the present invention having a strong bonding force between 0-H by such hydrogen bonding, a large amount of solvent remains on the gap fill and planarized portion on the substrate 10 even after the coating process is performed at room temperature. As the solvent residual ratio in the coating film increases as described above, the difference in density between the gap fill and the planarized portion can be relatively minimized, and the distribution of molecules generated through strong hydrogen bonding with the solvent becomes uniform.
    [17] Subsequently, as shown in FIG. 1B, under a wet atmosphere including H 2 / O 2 gas 20 without exposure to the atmosphere, the first heat treatment is performed in a coating film having a strong hydrogen bond in a temperature range of 400 ° C. or less. (22) The process is carried out. The H 2 / O 2 gas is supplied at 5-10 l / min.
    [18] Through the first heat treatment 22 process, H 2 is bonded to -O group in -Si-HO in the coating material and falls into H 2 O form as shown in the following formula (I), -Si + silver As shown in the following formula (II), in combination with O 2 to form an insulating film 15 which is SiO 2 .
    [19] -Si-HO + HH-> -Si + + H 2 O ----- (Ⅰ)
    [20] -Si + + OO → -Si-O 2 ----- (II)
    [21] Next, as shown in FIG. 1C, in the wet atmosphere including the H 2 / O 2 gas 30, the second heat treatment 24 process is performed at a high temperature of 700 ° C. or higher to the insulating film where the first heat treatment process is performed. (16) The formation is completed.
    [22] At this time, the second heat treatment 24 process supplies H 2 / O 2 gas at a pressure of 5 to 10 l / min under a pressure of 10 Torr or less.
    [23] The second heat treatment 24 serves to densify H and Si-O simultaneously with the volatilization of the solvent present in the insulating film.
    [24] The present invention induces an intermolecular hydrogen bonding reaction in the coating material itself using a resin having a resin and an aprotic property, and improves the flow characteristics in the coating film to provide a trench gap-filled application having a high aspect ratio. Advantageous processes can be carried out. In addition, even when the coating process is carried out at room temperature, the solvent molecules remain in the film and the formation of the insulating film (SiO 2 ) is promoted through a substitution reaction with oxygen by a heat treatment process in a subsequent wet (H 2 / O 2 ) atmosphere. Can be.
    [25] As described above, in the present invention, by forming a hydrogen bond between the resin and the solvent having the aprotic property, the solvent residual ratio in the coating film can be increased by the strong hydrogen bond energy. Therefore, when the solvent residual ratio in the coating film is increased, the gap fill and the planarized site density difference can be relatively minimized, and the distribution of molecules generated through strong hydrogen bonding with the solvent can also be made uniform.
    [26] In addition, the intermolecular hydrogen bond in the coating material is advantageous for the trench gap fill and planarization process having a high aspect ratio due to the increased flow characteristics of the OH group at the end of the molecule, and at the same time, a subsequent wet (H 2 / O 2 ) atmosphere. It is possible to enhance the formation of the insulating film (SiO 2 ) through a low temperature heat treatment process.
    [27] And through the method of the present invention, it is possible to minimize the chemical attack caused by the low density of the gap fill site, and also to minimize the deterioration by forming the insulating film at a low temperature of 400 ℃ or less.
    [28] In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.
    权利要求:
    Claims (7)
    [1" claim-type="Currently amended] Providing a substrate having a step on the surface,
    Forming a coating film by spin coating a coating material mixed with a solvent having an aprotic property and a resin to cover the stepped surface on the substrate;
    Forming an insulating film by first heat treating the coating film under a wet (H 2 / O 2 ) atmosphere without exposure to air;
    A method of forming an insulating film for a semiconductor device, comprising the step of curing the insulating film by heat treatment under a wet (H 2 / O 2 ) atmosphere.
    [2" claim-type="Currently amended] The method of forming an insulating film of a semiconductor device according to claim 1, wherein said first heat treatment is performed at a temperature of 400 deg.
    [3" claim-type="Currently amended] The method for forming an insulating film of a semiconductor device according to claim 1, wherein the H 2 / O 2 gas is supplied at 5-10 l / min.
    [4" claim-type="Currently amended] 2. The method of forming an insulating film of a semiconductor device according to claim 1, wherein said second heat treatment is performed at a temperature of 700 deg.
    [5" claim-type="Currently amended] The method of claim 1, wherein the second heat treatment supplies the H 2 / O 2 gas at 5 to 10 l / min at a pressure of 10 Torr or less.
    [6" claim-type="Currently amended] The method of claim 1, wherein the solvent having the aprotic properties includes atoms having high electronegativity at the end of the molecular structure.
    [7" claim-type="Currently amended] 7. The method of forming an insulating film of a semiconductor device according to claim 6, wherein said reactor having high electronegativity uses oxygen or nitrogen.
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    同族专利:
    公开号 | 公开日
    KR100680941B1|2007-02-08|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-04-27|Application filed by 주식회사 하이닉스반도체
    2001-04-27|Priority to KR1020010022948A
    2002-11-04|Publication of KR20020083571A
    2007-02-08|Application granted
    2007-02-08|Publication of KR100680941B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020010022948A|KR100680941B1|2001-04-27|2001-04-27|Method for forming insulation layer of semiconductor device|
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