• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to an etching solution for producing an integrated circuit containing hydrofluoric acid and an organic solvent. The etchant of the present invention is particularly suitable for selectively etching doped silicate layers.
    公开号:KR20020033745A
    申请号:KR1020027001189
    申请日:2000-07-05
    公开日:2002-05-07
    发明作者:질린스키클라우디아；라인루돌프；템펠에베르하르트
    申请人:플레믹 크리스티안；메르크 파텐트 게엠베하；
    IPC主号:
    专利说明:

    Etching solution containing hydrofluoric acid {ETCHING SOLUTION, CONTAINING HYDROFLUORIC ACID}
    [2] In the semiconductor industry, various types of integrated circuits are manufactured by deposition of various dielectric layers. The dielectric layer is deposited from, for example, a deposited borosilicate glass (BSG) layer, a phosphorus-silicate glass (PSG) layer, a boron-phosphate-silicate glass (BPSG) layer, an oxide layer of thermal oxide, or tetraethyl orthosilicate (TEOS). Oxide layer.
    [3] In general, doped glass layers have been applied to the undoped glass layers at various points in the semiconductor process. Such layers are generally boron-doped glass on thermal oxide (BSG), phosphorus-doped glass on thermal oxide (PSG) or boron-phosphorus-doped glass on thermal oxide (BPSG). The layers can also be applied to TEOS oxides.
    [4] After such doped layers have been applied, these doped layers must be removed again by etching in place. Depending on the intended use, it may be necessary to selectively etch the BSG, PSG or BPSG layer to obtain thermal oxide or TEOS oxide.
    [5] Since the doped layer exhibits a constant surface topography due to its underlying structure, the layer thickness to be removed is not the same at all parts of the wafer. However, in order to remove sufficient material at all sites to be etched, the etching time should be chosen such that the thickest layer is long enough to be etched. At this so-called over-etching time, the etching medium acts on the underlying thermal oxide or TEOS oxide at the site with the thinly doped glass layer, thus requiring an etching medium to etch the doped oxide at a much higher rate than the undoped oxide. Do.
    [6] A mixture of concentrated H 2 SO 4 and 50% HF is preferred for etching by spin etcher operation. These mixtures are already selective for the various layers and produce an etch layer of essentially uniform quality.
    [7] However, our own experiments with various commercial etching media showed inadequate selectivity during etching. In addition, although selective etching can be achieved with other mixtures, it has been found that the uniformity of etching is inadequate for the process.
    [8] Accordingly, it is an object of the present invention to provide the semiconductor industry with etching mixtures for the manufacture of integrated circuits which have a high etch rate and also have significantly improved selectivity and result in uniform etching.
    [1] The present invention relates to an etching solution containing hydrofluoric acid and an organic solvent for use in a method of manufacturing an integrated circuit. The etchant according to the invention is particularly suitable for the selective etching of the doped silicate layer.
    [9] The object of the present invention is hydrofluoric acid; Organic solvents as individual components or mixtures selected from the group consisting of ethylene glycol, propylene glycol, ethanol and glycerol; And an etching solution for manufacturing an integrated circuit containing water.
    [10] Hydrofluoric acid in the etching solution according to the invention is preferably used in an amount of 5 to 20% by weight.
    [11] In particular, this object is achieved by an etchant comprising only an organic solvent selected from the group consisting of ethylene glycol, propylene glycol, ethanol and glycerol.
    [12] The invention also relates to an etchant comprising as a organic solvent a mixture consisting of ethylene glycol and glycerol in a 1:10 to 10: 1 mixing ratio.
    [13] Etchants proved to be advantageous for the purposes of the present invention are etching solutions comprising ethylene glycol and glycerol in a 1: 5 to 5: 1 mixing ratio as organic solvents.
    [14] The object of the present invention is also achieved by an etchant comprising water in an amount of 1 to 20% by weight.
    [15] For the present invention, the object of the present invention is achieved by an etchant comprising a mixture of high purity individual components.
    [16] In particular, the present invention also relates to the use of the novel etchant described herein for the selective etching of doped silicate layers.
    [17] The mixtures developed herein can significantly improve the selectivity and uniformity of etching depending on the deposition method of the individual layers.
    [18] The etching rate achieved by the etchant according to the invention is advantageously that the etching rate for the etching of the PSG layer, the BSG layer and the BPSG layer is several times higher (up to 300 times or more) than the etching rate for the TEOS layer or the thermal oxide layer.
    [19] This selectivity was observed when etching in a spin etcher and during the deep etch process.
    [20] Organic solvents that can be used are ethylene glycol, propylene glycol, ethanol, isopropanol, glycerol and mixtures thereof. Etch rates that can be achieved using these solvents depend on the solvent used and the mixing ratio of the individual organic solvents. Moreover, the etching rate is greatly affected by the amount of hydrofluoric acid present in the etchant, and very particularly by the amount of water present.
    [21] The hydrofluoric acid content in the mixtures tested to be successful is between 5 and 20% by weight of HF. Suitable solvents are in particular pure ethylene glycol, pure propylene glycol, pure ethanol or pure glycerol. In the case of solvent mixtures, a mixture of glycerol and ethylene glycol in a ratio of 1:10 to 10: 1 exhibited particularly selective etching behavior.
    [22] In particular, in the deep etching process, the etching solution which is the basis of the present invention exhibits a significantly more uniform etching than that of a commercial etching solution.
    [23] The table below shows some examples of the selectivity achieved between BSG glass and thermal oxide in a deep etch process.
    [24] number Organic ingredients Selectivity (selectivity of BSG to thermal oxide) One Ethylene glycol 97 2 Glycerol 124 3 Ethylene Glycol: Glycerol = 1: 1 101 4 Ethylene Glycol: Glycerol = 1: 2 69 5 Ethylene Glycol: Glycerol = 2: 1 76
    [25] A big advantage over conventional mixtures is the surface uniformity after etching. This improved uniformity has a positive effect on the etching process because it can significantly reduce the over-etch time. Photos 1-3 are micrographs of BSG layers etched by deep etching using spin etchant F as a comparative solution. In micrograph 3, unwanted holes formed in the surface during etching are very sharp.
    [26] When using the etchant according to the invention no corresponding holes are found.
    [27] Experiments were carried out using the etchant according to the invention in a spin etcher manufactured and marketed by SEZ. However, the present etching solution can also be used when using a comparable apparatus. The mode of operation of this type of spin etcher is schematically illustrated in FIG. 1.
    [28] 2 to 7 show wafer profiles of BSG wafers after an etching operation with two mixtures of subject matter and a spin etchant F, a comparative solution. From these figures it is clear that the layer thickness after etching with the spin etchant F is significantly less uniform than after etching with the mixture according to the invention. All etching experiments were performed using the same parameters.
    [29] Specifically, the etching experiments performed showed that excessively high water content adversely affected the selectivity of etching. Thus, good results have been obtained at water contents of 2 to 20% by weight. Since the water content is essentially determined by the addition of hydrofluoric acid, the strongest possible hydrofluoric acid grade is used for etching solution preparation. Thus, 70% hydrofluoric acid is used instead of 50% hydrofluoric acid.
    [30] To illustrate the effect of the amount of water present in the etchant, Table 2 shows how the etch rate and thus selectivity change at constant HF concentrations and different water content of ethylene glycol / HF mixtures.
    [31] mixture Etching speed BSG glass Thermal oxide 70% ethylene glycol + 15% HF + 15% H 2 O 3310 nm / min 48 nm / min 78.6% ethylene glycol + 15% HF + 6.4% H 2 O 2507 nm / min 14 nm / min
    权利要求:
    Claims (8)
    [1" claim-type="Currently amended] Hydrofluoric acid; Organic solvents as individual components or mixtures selected from the group consisting of ethylene glycol, propylene glycol, ethanol and glycerol; And etching liquid for manufacturing an integrated circuit containing water.
    [2" claim-type="Currently amended] The method of claim 1,
    An etching solution containing 5 to 20% by weight of hydrofluoric acid.
    [3" claim-type="Currently amended] The method of claim 1,
    An etchant comprising an organic solvent selected from the group consisting of ethylene glycol, propylene glycol, ethanol and glycerol.
    [4" claim-type="Currently amended] The method of claim 1,
    Etching liquid containing ethylene glycol and glycerol in 1:10 to 10: 1 mixing ratio as an organic solvent.
    [5" claim-type="Currently amended] The method of claim 1,
    Etching liquid containing ethylene glycol and glycerol in a 1: 5 to 5: 1 mixing ratio as an organic solvent.
    [6" claim-type="Currently amended] The method according to any one of claims 1 to 5,
    Etching solution comprising water in an amount of 1 to 20% by weight.
    [7" claim-type="Currently amended] The method according to any one of claims 1 to 6,
    An etchant comprising a mixture of high purity individual components.
    [8" claim-type="Currently amended] Use of an etchant according to any one of claims 1 to 6 for the selective etching of the doped silicate layer.
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    同族专利:
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    US20070218700A1|2007-09-20|
    WO2001009935A1|2001-02-08|
    AU6822100A|2001-02-19|
    DE19935446A1|2001-02-01|
    EP1203404A1|2002-05-08|
    US7501072B2|2009-03-10|
    JP2003514373A|2003-04-15|
    TWI222468B|2004-10-21|
    JP4837211B2|2011-12-14|
    MY140465A|2009-12-31|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1999-07-28|Priority to DE19935446.4
    1999-07-28|Priority to DE19935446A
    2000-07-05|Application filed by 플레믹 크리스티안, 메르크 파텐트 게엠베하
    2000-07-05|Priority to PCT/EP2000/006314
    2002-05-07|Publication of KR20020033745A
    优先权:
    申请号 | 申请日 | 专利标题
    DE19935446.4|1999-07-28|
    DE19935446A|DE19935446A1|1999-07-28|1999-07-28|Etching solution containing hydrofluoric acid|
    PCT/EP2000/006314|WO2001009935A1|1999-07-28|2000-07-05|Etching solution, containing hydrofluoric acid|
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