• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: A method for fabricating a guard ring of a fuse box using a plug poly is provided to improve the characteristic of the guard ring by using a plug poly as a landing pad of a guard ring metal contact of the fuse box. CONSTITUTION: An active region and a field oxide layer region(130) are formed on a semiconductor substrate(10). A polysilicon, a tungsten silicide, a capping polysilicon, a mask oxide, and an arc nitride are deposited sequentially thereon. The first poly(20) and a mask oxide layer(30) are formed by performing an etch process. A spacer oxide is deposited on the mask oxide layer(30). A spacer(40) is formed by etching the spacer oxide. A plug poly(140) is formed on a whole surface of the above structure. The first BPSG(50), the second BPSG(60), and the third BPSG(70) are deposited sequentially on the plug poly(140). The first metal contact(150) is formed by etching partially the third, the second, and the first BPSGs(70,60,50). The first metal(90) is formed thereon. An IMD layer(100) and the second metal contact(95) are formed on the first metal(90). The second metal(98) is formed thereon. A protective layer(110) and a PIX layer(120) are formed on the second metal(98).
    公开号:KR20020031521A
    申请号:KR1020000062018
    申请日:2000-10-20
    公开日:2002-05-02
    发明作者:이종문
    申请人:박종섭；주식회사 하이닉스반도체；
    IPC主号:
    专利说明:

    Method for manufacturing fuse box guard ring using plug pulley {Method of manufacturing a fuse box guardring}
    [13] The present invention relates to a method for manufacturing a fuse box guard ring using a plug poly, and in particular, a plug poly used as a landing pad of a bit line contact and a capacitor storage electrode contact in a DRAM manufacturing is used as a landing pad of a guard ring metal contact of a fuse box. The present invention relates to a fuse box guard ring manufacturing method using a plug pulley capable of manufacturing a guard ring having a net structure.
    [14] In general, DRAMs have fault-repair circuits that can be used to repair faulty cells. That is, in the case of a defect that can be repaired, the yield can be improved by laser cutting the fuse of the redundancy fuse box of the address corresponding to the defect. First poly top to open the PIX layer, passivation layer, IMD layer and BPS layer of the fuse box in advance during in-line fixation to enable such fuse cutting after probe testing It leaves a constant oxide film on. At this time, the surface of the exposed IMD and BPSG layer is easy to penetrate moisture and may cause a defect of the device, so that the inside of the device is separated from the outside by using the second metal contact and the first metal contact as guard rings. However, in the case of the first metal contact, since the first poly fuse cannot have the same structure as that of the second metal, the first metal contact does not function as a complete guard ring. As a result, it causes a failure in PCT (PRESSURE COOKER TEST) which is a device reliability test.
    [15] The prior art will be described with reference to FIGS. 1A and 1B.
    [16] The active region and the field oxide layer region 130 are formed on the semiconductor substrate 10 and polysilicon, tungsten silicide, capping polysilicon, mask oxide, and arc nitride are sequentially deposited. The exposed arc nitride and mask mask oxide are etched after the photo mask process. After removal of the photoresist film, the capping polysilicon tungsten silicide and polysilicon are removed using mask oxide as a hard mask to form the first poly 20 and the mask oxide film 30. A spacer oxide is deposited on the mask oxide layer 30 and then etched to form a spacer 40. The first BPSG 50, the second BPSG 60, and the third BPSG 70 are deposited and form a plurality of first metal contacts 80 that are separated from each other. After forming the first metal 90, the IMD layer 100 is formed thereon, and the second metal contact 95 is formed. A second metal 98 connected to the second metal contact 95 is formed, and a protective layer 110 and a PIX layer 120 are formed thereon.
    [17] In the conventional fuse box guard ring structure, since the first metal contact is not free, there is a disadvantage in that it does not serve as a complete guard ring.
    [18] Accordingly, the present invention solves the above-mentioned disadvantages by allowing the first metal contact to be formed in the same shape as the second metal contact using plug poly used as a landing pad of the bit line contact and the capacitor storage electrode contact in the manufacture of the DRAM cell. It is an object of the present invention to provide a method for manufacturing a fuse box guard ring using a plug pulley.
    [1] 1A is a plan view for explaining a conventional fuse box guard ring manufacturing method.
    [2] FIG. 1B is a sectional view of the state taken along the line A-A of FIG.
    [3] 2A to 2C are cross-sectional views illustrating a method for manufacturing a fuse box guard ring according to the present invention.
    [4] * Explanation of symbols for the main parts of the drawings
    [5] 10: semiconductor substrate 20: first poly
    [6] 30: mask oxide 40: spacer
    [7] 50 to 70: first to third BPSG
    [8] 80 and 150: first metal contact
    [9] 90: first metal 95: second metal contact
    [10] 100: IMD layer 110: protective layer
    [11] 120: PIX layer 130: field oxide film region
    [12] 140: plug pulley
    [19] According to an aspect of the present invention, there is provided a method of manufacturing a fuse box guard ring using a plug poly, the method including: forming a plurality of first poly on an active region of a semiconductor substrate;
    [20] Forming a plurality of BPSGs on the entire structure including the first poly;
    [21] Forming a first metal contact in the BPSG;
    [22] Forming a first metal connected to the first metal contact;
    [23] Forming an IMD layer on the entire structure including the first metal;
    [24] Forming a second metal contact in the IMD layer;
    [25] Forming a second metal connected to the second metal contact;
    [26] And forming a protective layer on the entire structure including the second metal.
    [27] The first poly is preferably made of polysilicon, tungsten silicide and capping polysilicon.
    [28] Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
    [29] 2A to 2C are cross-sectional views illustrating a method for manufacturing a fuse box guard ring according to the present invention.
    [30] Referring to FIG. 2A, an active region and a field oxide region 130 are formed on the semiconductor substrate 10, and polysilicon, tungsten silicide, capping polysilicon, mask oxide, and arc nitride are sequentially deposited. The exposed arc nitride and mask mask oxide are etched after the photo mask process. After removal of the photoresist film, the capping polysilicon tungsten silicide and polysilicon are removed using mask oxide as a hard mask to form the first poly 20 and the mask oxide film 30. A spacer oxide is deposited on the mask oxide layer 30 and then etched to form a spacer 40.
    [31] In connection with FIG. 2B, a plug pulley 140 is formed over the entire structure. The first BPSG 50, the second BPSG 60, and the third BPSG 70 are sequentially deposited on the plug poly 140.
    [32] Referring to FIG. 2C, portions of the first to third BPSGs 50 to 70 are etched to form one cylindrical first metal contact 150. After forming the first metal 90, the IMD layer 100 is formed thereon, and the second metal contact 95 is formed. A second metal 98 connected to the second metal contact 95 is formed, and a protective layer 110 and a PIX layer 120 are formed thereon.
    [33] Through the above process, the guard ring of the fuse box connected to the second metal, the second metal contact, the first metal, the first metal contact, the landing plug pulley, and the active reverse region is completed.
    [34] As described above, according to the present invention, the first metal contact is formed as a second metal contact as a second metal contact by using a plug poly used as a landing pad of a bit line contact and a capacitor storage electrode contact in manufacturing a DRAM cell. It can effectively block infiltration.
    权利要求:
    Claims (2)
    [1" claim-type="Currently amended] Forming a plurality of first polys over the active region of the semiconductor substrate;
    Forming a plurality of BPSGs on the entire structure including the first poly;
    Forming a first metal contact in the BPSG;
    Forming a first metal connected to the first metal contact;
    Forming an IMD layer on the entire structure including the first metal;
    Forming a second metal contact in the IMD layer;
    Forming a second metal connected to the second metal contact;
    A method of manufacturing a fuse box guard ring using a plug pulley comprising the step of forming a protective layer on the entire structure including the second metal.
    [2" claim-type="Currently amended] The method of claim 1,
    The first poly is a fuse box guard ring manufacturing method using a plug poly, characterized in that consisting of polysilicon, tungsten silicide and capping polysilicon.
    类似技术:
    公开号 | 公开日 | 专利标题
    US4455194A|1984-06-19|Method for producing a semiconductor device
    CN100561728C|2009-11-18|Semiconductor device and manufacture method thereof
    US7279419B2|2007-10-09|Formation of self-aligned contact plugs
    JP4334886B2|2009-09-30|Method for forming fuse box guard ring of semiconductor device and semiconductor device using the same
    US6835998B2|2004-12-28|Fuse area structure including protection film on sidewall of fuse opening in semiconductor device and method of forming the same
    JP4813643B2|2011-11-09|Method for forming self-aligned contact structure of semiconductor integrated circuit
    TW463320B|2001-11-11|Manufacturing method for semiconductor integrated circuit device
    KR100400033B1|2003-09-29|Semiconductor device having multi-interconnection structure and manufacturing method thereof
    KR100726145B1|2007-06-13|Method for fabricating semiconductor device
    KR100372150B1|2003-02-14|Process of forming stacked capacitor dram
    US6436812B1|2002-08-20|Method of manufacturing a semiconductor device using anti-reflective layer and self-aligned contact technique and semiconductor device manufactured thereby
    KR100545865B1|2006-01-24|Semiconductor device and manufacturing method thereof
    KR100587635B1|2006-06-07|method for fabrication of semiconductor device
    US6175145B1|2001-01-16|Method of making a fuse in a semiconductor device and a semiconductor device having a fuse
    KR100448719B1|2004-09-13|Semiconductor device and method for fabricating the same using damascene process
    JP3902507B2|2007-04-11|Repair fuse opening method of semiconductor element
    JP2005079576A|2005-03-24|Semiconductor device and manufacturing method therefor
    KR100541049B1|2006-01-11|A Semiconductor Device Having Cells of A Dynamic RAM And Fabrication Method Thereof
    US6180503B1|2001-01-30|Passivation layer etching process for memory arrays with fusible links
    US6531757B2|2003-03-11|Semiconductor device fuse box with fuses of uniform depth
    US6294474B1|2001-09-25|Process for controlling oxide thickness over a fusible link using transient etch stops
    US8017490B2|2011-09-13|Methods of forming metal-insulator-metal | capacitors with passivation layers on dielectric layers
    US6740550B2|2004-05-25|Methods of manufacturing semiconductor devices having chamfered silicide layers therein
    US5907772A|1999-05-25|Method of producing cylindrical storage node of stacked capacitor in memory cell
    TWI332699B|2010-11-01|Integrated circuit devices and methods of forming the same
    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2000-10-20|Application filed by 박종섭, 주식회사 하이닉스반도체
    2000-10-20|Priority to KR1020000062018A
    2002-05-02|Publication of KR20020031521A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020000062018A|KR20020031521A|2000-10-20|2000-10-20|Method of manufacturing a fuse box guardring|
    [返回顶部]