• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The apparatus of the present invention provides a dual use of a UV light source to heat a substrate to facilitate the photochemical reaction treatment required for the substrate treatment. The invention also processes the substrate by heating the substrate to ambient temperature via UV radiation at a first power level, and photochemical (UV) reactive chemicals to the substrate in the presence of UV radiation at a second power level. Or a method for conditioning the substrate by exposing it to a reaction chemical that reacts with a compound on the surface of the substrate to form a photochemical reaction compound.
    公开号:KR20010107966A
    申请号:KR1020017006177
    申请日:1998-11-16
    公开日:2001-12-07
    发明作者:페이필드로버트티.；슈왑브렌트
    申请人:에프 에스 아이 인터내셔날,인코포레이티드；
    IPC主号:
    专利说明:

    UV Wafer Heat Treatment and Photochemical Process Equipment {EQUIPMENT FOR UV WAFER HEATING AND PHOTOCHEMICAL PROCESSING}
    [2] It is well known to use ultraviolet (UV) active gases in semiconductor substrate processes, including cleaning, etching, or other processing. US Pat. No. 5,580,421 to Hiatt et al., Incorporated herein by reference, describes an apparatus for processing a substrate with a UV activated conditioning gas. A method of using UV / halogen for metal removal is disclosed in co-pending serial number 08 / 621,538, filed March 25, 1996, incorporated herein by reference. Since the rate of chemical reaction generally depends on the temperature, the treatment efficiency depends on the treated temperature. It is desirable to have good control of the substrate to preheat the desired process temperature over ambient temperature to provide enhanced process performance. In addition, heat treatment is used to thermally desorb volatile species adsorbed on the surface of the substrate.
    [3] There are several ways to heat the substrate in preparation for chemical processes or thermal desorption of volatile species. Conventional methods of placing the substrate directly on a heating element and subject to heat treatment do not allow access to both sides of the substrate. This is especially a problem when trying to process both sides of the substrate. It also does not allow multiple temperature sequences with reasonable throughput.
    [4] Another way to heat the substrate is to apply a heated gas to the substrate. However, using a heated gas to heat the substrate is inefficient.
    [5] Another method of heating a substrate is to apply infrared (IR) radiation to the substrate in a rapid thermal treatment. However, if both heat treatment and UV illuminance are required, this causes significant engineering problems and otherwise costs the cost of any process tool so equipped. These problems include control of the stray chamber heat treatment, control of the substrate temperature, and logistics that together form the IR bulb, UV bulb, and their respective control systems in some apparatus.
    [6] The drawbacks of the above heat treatment methods in semiconductor substrate processing highlight the need for an inexpensive method of heating the substrate in batches to a predetermined process temperature to provide UV illuminance in one device.
    [1] The present invention relates to an apparatus having an ultraviolet light source for UV heat treatment and photochemical processing of a substrate, including a semiconductor substrate, and a method for processing the substrate using the apparatus. The invention is particularly applicable to the etching, cleaning, or bulk removal of films or components from the surface of semiconductor substrates at temperatures of about 400 ° C. or less in the manufacture of integrated circuits.
    [13] 1 shows the adsorption spectra of Si in the ultraviolet region at 25 ° C. temperature,
    [14] 2 shows a schematic diagram of one embodiment of the invention,
    [15] 3 shows a schematic diagram of a chamber and lamphouse of another embodiment of the present invention.
    [16] * Description of the symbols for the main parts of the drawings *
    [17] 10: Chamber 28: UV radiation
    [18] 14: lamphouse 30: vacuum pump
    [19] 22: transparent window 35: inlet
    [20] 26: chemical delivery system 36: outlet
    [7] It is an object of the present invention to provide a novel apparatus for heat treatment and light treatment of a silicon-containing substrate that overcomes the problems associated with the above-mentioned heat treatment method by developing a UV light source present in the light treatment of the silicon-containing substrate to heat the substrate. . The apparatus of the present invention includes a reaction chamber for receiving and holding the substrate, a UV radiation light source configured to emit toward the substrate, and a control system for controlling the UV radiation light source. The UV light source can provide at least two different time average power levels, i.e., a heat treatment level effective to induce heat treatment of the substrate and a photochemical level of UV power effective to induce the light treatment. Optionally, the present invention further includes a chemical delivery system for delivering chemical to the reaction chamber. The invention also includes at least one UV transparent window that allows the UV radiation to be transmitted to the chamber.
    [8] In one embodiment of the invention wherein a first UV lamphouse is mounted on the front of the reaction chamber and a second UV lamphouse is mounted on the back of the chamber, providing UV radiation to the front and back of the substrate. As a result, the substrate is collectively heated on both sides. In another embodiment, one side of the substrate is susceptible to UV radiation at the heat treatment level and the opposite side of the substrate is susceptible to UV radiation at the photochemical reaction level. In another embodiment, one UV light source is used for both heat treatment and photochemical reactions.
    [9] A further feature of the present invention is to treat the substrate by heating the substrate to ambient temperature in one or more heat treatment steps via a first time average power level, i. E. UV output of the heat treatment level, and the first heating. The substrate is exposed in one or more processing steps by exposing the substrate to a second time-averaged level that is distinct from the processing level, ie, a chemical that reacts photochemically (UV) in the presence of UV radiation. It is to provide a method for conditioning. Photochemical reaction chemicals are broadly defined to include those chemicals that are photoactive due to interactions such as adsorption on the surface of the substrate. Photochemical reaction chemicals are also defined to include species that are already adsorbed on the surface of the substrate that will be photodesorbed due to the presence of the impinging UV radiation.
    [10] A further feature of the present invention is a chemical process for treating a substrate by heating the substrate to ambient temperature in one or more heat treatment steps via a UV output in the absence of a photochemical reaction gas and photochemically reacting the substrate. To provide a method of conditioning the substrate in one or more processing steps by exposure to the drug.
    [11] A further feature of the invention is a method of performing UV photochemical treatment on a semiconductor substrate, wherein UV radiation is provided to at least a portion of the substrate at a total radiation power density integrated at a wavelength of 0.1 to 1.0 microns of 0.3 watts / cm 2 or more. At least one heat treatment step, and at least one reaction step in which UV radiation is provided at a power level distinct from the heat treatment power level, wherein the UV radiation causes a chemical reaction to affect the treatment of the substrate. And interact with at least one photochemical reaction chemical, wherein the power density in the heat treatment step exceeds the power density in the reaction step.
    [12] The present invention provides improved flexibility in heating the substrate in that the UV light treatment and UV heat treatment are performed independently on one or both sides of the substrate. For example, if only gas phase activation is desired, the front side of the substrate is protected from direct UV illuminance. Moreover, since the stray heat treatment of the treatment chamber associated with the IR heat treatment is reduced to a considerable extent with the UV heat treatment system, it is necessary to eliminate the complicated and expensive chamber cooling system but high throughput is maintained.
    [21] For example, in the process of substrates such as semiconductor wafers, it is often necessary to heat the substrate to a predetermined processing temperature before or during the processing of the substrate. The apparatus of the present invention provides a dual use of a UV light source to heat a substrate and to facilitate the photochemical reactions required for processing the substrate.
    [22] Another aspect of the invention is to treat a substrate by heating the substrate on one or both sides to ambient temperature in one or more steps via UV radiation exposure at a first time average power level and the first time average power level. Conditioning the substrate in one or more processing steps by exposing one or both sides of the substrate to photochemically reactive chemicals in the presence of UV radiation at a second time average power level reduced from To provide a way. Photochemical reaction chemicals are chemicals that are photoactive due to interactions such as adsorption on the surface of the substrate, or species that are on the surface of the substrate and photodesorbed due to the presence of the impingement UV radiation.
    [23] The substrate materials treated with the device are generally any type of material that effectively connects with the transfer photons and absorbs the bulk of the energy delivered by the UV light source. Examples of such materials include suitable absorbing crossovers and silicon-containing substrates, gallium arsenide-containing substrates, other semiconductor substrates, or substrates of other materials. The present definition also includes a substrate that is transparent to the transmission radiation but has a suitable absorbing thin film deposited on or interposed in the surface. 1 shows an appropriate spectrum of silicon in the ultraviolet region. Strong UV absorption represents an efficient connection between silicon and photons delivered by conventional light sources described herein. Thus, the suitability of silicon-containing materials for the present invention is readily distinguished.
    [24] The present invention provides treatments such as oxide etching with UV and halogenated reactants, UV active metal removal processes, or any other processing process involving photochemical reactions and requiring preheating of the substrate to ambient temperature but below about 400 ° C. It is used to perform. Thermal excitation above 400 ° C makes IR based heat treatment methods more efficient as more free carriers are present, as observed in the rapid thermal process technology.
    [25] Photochemical reaction chemicals are any form of photochemical reaction gas known to be used for etching, cleaning, bulk stripping, or other conditioning of substrate surfaces, but in preferred embodiments are mixed with one or more photochemical reaction gases, for example, And a first gas such as nitrogen, argon, or other inert gas. The photochemical reaction gas may be a compound that reacts in the gas phase to form reactive species such as radicals. Examples of such photochemical reaction gases include, but are not limited to, ClF 3 , F 2 , O 2 , N 2 O, H 2 , NF 3 , Cl 2 , other activating gases, or mixtures of such gases. The photochemical reaction chemical can also be any chemical that can react with or adsorb on the surface of the substrate to form photochemical reaction species, whether or not gaseous. Nonetheless, other photochemical reaction chemicals include, for example, metal halides such as CuCl 2 and those described in the above-mentioned co-pending application serial number 08 / 818,890, filed March 17, 1997. In this case, the photochemical reaction chemical is an adsorbent compound that desorptions in the presence of the impinging UV radiation.
    [26] 2 is a schematic diagram of major component parts of the system constituting an embodiment of the apparatus. The reaction chamber is at 10. The UV radiation light source includes a lamphouse 14 mounted outside the reaction chamber 10. The front of the chamber 10 includes a UV transparent window 22 that allows UV light to pass through the interior of the chamber from the lamphouse 14 to reach the substrate. The chemical delivery system is shown at 26 and the control system for controlling the UV radiation is shown at 28. The vacuum pump 30 is connected to the chamber 10. In operation, chemicals are delivered to the chamber 10 through the inlet 35 and discharged through the outlet 36.
    [27] Although only one UV lamp is needed, the presence of a first lamphouse at the front and a second lamphouse at the back of the chamber allows simultaneous processing of both sides of the substrate. Optionally, either side of the wafer can be roughened separately as desired. In this embodiment, the back of the chamber also includes a UV transparent window. If two UV lamphouses are used, the second UV lamphouse is preferably rotated 90 degrees to the first UV lamphouse to facilitate heating both sides of the substrate. For convenience we show the chamber and the substrate with the front and the back. However, the front face of the substrate does not have to face the front face of the chamber.
    [28] 3 shows the chamber and lamphouse of an embodiment involving both front and back lamphouses. The chamber 10 has two UV transparent windows 22, one for each of the front and the back of the chamber. Two lamphouses 14, one on the front and one on the back, accept the roughness of both sides of the wafer. The bottom lamp house is rotated 90 degrees to the front lamp house.
    [29] In another embodiment, the lamp (s) may be attached within the chamber. In this embodiment the UV transparent window is not necessary.
    [30] A suitable UV lamp is a 9-inch (7mm-caliber) linear xenon modified Chae Won-jin crystal flashlight (created by Xenon). In a preferred embodiment, two such lamps are placed in the lamphouse. In this embodiment, the lamphouse is provided with 1500 watts to power the lamp. Other radiation lamps, such as mercury lamps, can be used as long as the light source provides sufficient power in the wavelength range of 0.1 to 1.0 micron and the output photons react with interesting special chemical systems. More powerful or weaker UV light sources can be used. Of course, the power of the lamp will determine how quickly the substrate can be heated. In two 1500 watt lamphouses, one on the front and one on the back, the temperature of the 150 mm silicon wafer was tilted from room temperature to 200 ° C. in about 30 seconds.
    [31] The flash lamp power source includes a power source capable of delivering up to 1500 Watts of input power to the lamphouse as a fixed input pulse. Optionally, the power supply may also include a pulse shaping network designed to maximize power output in the region that is optimal for the given photochemical reaction.
    [32] The lamphouse may simply be a device for mounting the UV light source, while the lamphouse may also include one or more cylindrical parabolic or elliptical reflectors.
    [33] The apparatus of the present invention is operated in two modes: heat treatment mode and photochemical reaction mode. In the heat treatment mode, the UV light source is operated at a higher power level than in the photochemical reaction mode, or the gaseous environment becomes non-photoactive, for example by using inert gas or delivering UV in vacuum. . In the photochemical reaction mode, the power output is reduced to a level sufficient to process a given photochemical reaction or the photochemical reaction chemical is introduced.
    [34] The UV controller can be any circuit that, when connected to the UV light source, causes the UV light source to deliver a predetermined amount of time average power at a UV heat treatment level and photochemical reaction level. One method for controlling the time average power is to use a variable power supply. Xenon 740, made by Xenon, is an example of such a power source that allows control over the number of pulses per second delivered by the lamphouse. Optionally, the UV can be controlled manually by the operator.
    [35] The invention can be operated in an open loop without any temperature feedback during the heat treatment step. If the UV light source is a flashlamp, its low thermal mass allows for pulse energy calibration and thereby for repeatable temperature control of the substrate in an open loop system. Optionally, a temperature control system can be installed in conjunction with a programmable control system for altering the output of the UV light source to reach and selectively maintain a predetermined substrate temperature. The chamber temperature may be controlled by a feedback mechanism associated with a feedback loop and a resistive heater to maintain the chamber at a predetermined temperature after the initial UV heat treatment step.
    [36] A temperature control system suitable for the present invention includes a temperature sensor and a feedback temperature controller for modulating the output of the UV radiation light source. The output of the UV radiation light source is characterized by a pulse train, which is characterized by the number of pulses per second and the energy per pulse of the UV radiation. The temperature feedback controller modulates the number of pulses per second and / or energy per pulse. The model DRS 1000 temperature sensor from thermoionics is a commercially available non-contact optical sensor that can be used in the present invention although other temperature sensors may be used.
    [37] The chemical delivery system may comprise one or more light sources of chemicals in fluid communication with a piping system in turn communicating with the reaction chamber. The chemical supply system may be configured to allow the supply of chemicals in the gas phase as well as to mix one or more gases through any method known in the art.
    [38] The vacuum pump may pump the chamber to 10 m torr or less. If lower pressures are desired, higher vacuum pumps can be used.
    [39] The present invention is much simpler in design and structure as a result of the reduced stray heat treatment—no liquid cooling to the chamber is necessary since the UV photons are not efficiently connected to the chamber. Moreover, the present invention further provides greater flexibility and control in the processing of semiconductor substrates. Suitably configured, the device can heat the substrate on the back, front, or both sides. Heat treatment of the substrate from the back side is particularly advantageous for applications in which the substrate must be heated without exposing the front face to high energy UV photons. It is also advantageous if the front side of the substrate contains, for example, but not limited to, a large amount of material that does not efficiently connect with the UV photons, such as aluminum or copper. On the one hand, heat treatment of both sides simultaneously allows for a faster temperature gradient than heat treatment only from the back side. Similarly, the apparatus allows for light treatment of the substrate from the front, the back, or both sides.
    [40] The invention also relates to a method for performing a UV photochemical treatment on a semiconductor substrate, the method comprising: at least one heat treatment wherein UV radiation is provided to the substrate at a first time average power level-heat treatment level to heat the substrate; And at least one reaction step in which UV radiation is provided at a second time average power level, i.e. at the reaction level, at a heat treatment level above the reaction level. In the reaction step, the UV radiation interacts with at least one photochemical reaction chemical that causes a chemical reaction that affects the substrate treatment. The heat treatment step may occur even in the presence or absence of photochemical reaction chemicals. The photochemical reaction chemical may be present on the surface of the substrate and / or in a gaseous environment in which the substrate is located. The photochemical reaction chemical may be supplied directly to the reaction chamber via a chemical delivery system or indirectly as a result of the reaction of the chemical in the gaseous environment and the surface of the substrate to form the photochemical reaction chemical. The photoactive chemicals may also be generated in the gas phase without exposing the front side of the substrate to UV photons using a backside photochemical treatment.
    [41] In one embodiment of the invention, the substrate is simultaneously heated to both sides of the substrate, followed by light treatment of one or both sides of the substrate. This allows for maximum heat treatment. In another embodiment, with respect to only one lamp, the substrate is heated to only one side, i.e., the back side, to avoid facilitating any photochemical reaction on the front side during the heat treatment step, and then The backside is light treated to form radicals in the reaction chamber that will react with the front face without detaching any species from the front face of the substrate. In another embodiment, with respect to the two lamps, following the back heat treatment, the front side of the substrate is likely to be directly UV light treated. In another embodiment, the light treatment step may precede the heat treatment step. In another embodiment, multiple heat treatment and light treatment steps may be used. In another embodiment, the heat treatment occurs simultaneously with the light treatment by directing UV to one side of the substrate in the heat treatment step while simultaneously directing UV to the opposite side of the substrate at the light treatment level.
    [42] In another embodiment, the present invention is directed to a method of performing UV photochemical treatment on a semiconductor substrate, the substrate having a front side and a back side, with a total of 0.1 to 1.0 microns of UV radiation having a wavelength of 0.3 watts / cm 2 or greater. At least one heat treatment step provided to at least a portion of the substrate having an integrated power density, and at least one reaction step wherein UV radiation is provided at a power level distinct from the heat treatment level, wherein the UV radiation comprises: Interact with at least one photochemical reaction chemical that causes a chemical reaction that affects the processing of the substrate, wherein the power density in the heat treatment step exceeds the power density in the reaction step. Optionally, photochemical reaction chemicals may be present during the heat treatment step.
    [43] In any of the above embodiments, the UV light source can be operated at a power level that can maintain or increase the temperature of the substrate during the photochemical step.
    [44] The following example illustrates all the flexibility of a double-sided UV system.
    [45] Example 1
    [46] Silicon wafer with a SiO 2 sacrificial layer is susceptible to UV and heat treatment process at Orion (ORION R) dry gas onto the wafer process tool. The tool is supplied by FSI International, Inc. of Chaska, Minnesota, and is configured in accordance with the preferred embodiment disclosed above.
    [47] Two 9 "xenon-filled flash lamps (manufactured by Xenon Company) and two lamphouses with two parabolic reflectors per lamphouse are each supplied with variable power. In the two supply systems, the total electrical input energy is maintained at 400 joules per pulse and the number of pulses per second (pps) is adjusted to vary the time average power from 0 to 3000 watts. In this embodiment, 3000 watts of electrical input power corresponds to about 1.5 / cm 2 optical power (100-1000 nm) in the substrate. One lamphouse is located in front of the process chamber and the other lamphouse is located at the back of the process chamber.
    [48] After the wafer is loaded into the chamber, a first heat treatment step is used to raise the wafer from room temperature (about 23 ° C.) to a process temperature of 60 ° C. for some time while the chamber is filled with 5 Torr of nitrogen gas. . Both lamphouses operate at 7 pulses per second at maximum flash rate to maximize the temperature ramp rate. Under these conditions, the wafer reaches a temperature of 60 ° C. in 5 seconds. Note that the heat treatment is performed in open-loop mode with the temperature rise associated with each UV flash calibrated in a separate step.
    [49] Then, the back lamphouse is turned off and the front pulse rate is reduced to 2 pulses per second. The wafer is then subjected to a 5 second 5 Torr UV / Cl 2 photochemical process to remove any hydrocarbons and fit the wafer surface to well defined conditions.
    [50] Then, the front lamphouse is turned off and the wafer temperature is adjusted by the chamber, which itself is maintained at 60 ° C. under feedback control. At this time, the SiO layer is etched using a 40 second 75 Torr gas phase HF base process with the silicon surface in a hydrogen terminated state.
    [51] When the HF etching is finished, the back lamphouse is turned on at 7 pulses per second and the chamber is opened to vacuum. The lamphouse stays for 30 seconds for some time while the wafer temperature reaches about 150 ° C. Only this back step is used to thermally desorb oxygen-containing species that are not very volatile to desorb at 60 ° C. (during the oxide etching step) without photodesorption of any desired hydrogen termination on the front of the wafer.
    [52] Example 2a
    [53] In a second example, a silicon wafer with a lossy SiO 2 layer is processed in the same manner as described in Example 1 until the last step. After the HF oxide etching is finished, both lamphouses are turned on at the maximum power (7 pulses per second) for 25 seconds to bring the wafer temperature to about 200 ° C.
    [54] The chamber is then filled with 5 Torr of Cl 2 and the back lamp is turned off. These conditions are maintained for 30 seconds to eliminate undesirable metal contamination.
    [55] Example 2b
    [56] For example 2a, the heat treatment step except that the chamber is filled with 5 Torr of Cl 2 during the temperature ramping step (the wafer is heated to 200 ° C.) rather than during the next photochemical reaction step. While allowing some photochemical reaction to occur, Example 2a is repeated with all conditions keeping the same.
    [57] The invention is particularly applicable to the etching, cleaning, or bulk removal of films or components from the surface of semiconductor substrates at temperatures of about 400 ° C. or less in the manufacture of integrated circuits.
    权利要求:
    Claims (20)
    [1" claim-type="Currently amended] A reaction chamber for receiving and holding a substrate, the reaction chamber including a front side and a back side;
    A UV radiation light source configured to emit toward the substrate, the light source delivering total radiation power integrated at a wavelength of 0.1 to 1.0 micron of at least 0.3 Watts / cm 2 to at least a portion of the substrate, and
    To control the UV radiation light source to provide at least two different time average energy levels, i.e., a heat output level effective to induce heat treatment of the substrate and a photochemical level effective to induce the light treatment. An apparatus for performing a UV heat treatment and a light treatment step on a substrate having a front and a back, characterized in that it comprises a control system.
    [2" claim-type="Currently amended] 10. The apparatus of claim 1, further comprising a chemical delivery system for delivering chemical to the reaction chamber.
    [3" claim-type="Currently amended] The substrate of claim 1, wherein the UV radiation light source comprises at least one front UV lamphouse mounted at the front of the reaction chamber or at least one rear UV lamphouse mounted at the rear of the reaction chamber. A device for performing a UV heat treatment and a light treatment step on a bed.
    [4" claim-type="Currently amended] The substrate of claim 1, wherein the UV radiation light source comprises at least one front UV lamphouse mounted at the front of the reaction chamber and at least one rear UV lamphouse mounted at the rear of the reaction chamber. Apparatus for performing a UV heat treatment and a light treatment step on the bed.
    [5" claim-type="Currently amended] 5. The UV heating on a substrate of claim 4, wherein the front and rear UV lamphouses are mounted outside of the chamber and the chamber further comprises UV transparent windows through which the UV radiation is delivered to the chamber. Apparatus for performing the processing and light treatment steps.
    [6" claim-type="Currently amended] The substrate of claim 4, wherein the at least one front UV lamphouse comprises at least one linear xenon flashbulb and the at least one backside UV lamphouse comprises at least one linear xenon flashbulb. Apparatus for performing a UV heat treatment and a light treatment step on the bed.
    [7" claim-type="Currently amended] 5. The apparatus of claim 4, wherein the at least one front and back lamphouse comprises at least one cylindrical parabolic or elliptical reflector, respectively. .
    [8" claim-type="Currently amended] 5. The apparatus of claim 4, wherein said at least one back UV lamphouse is rotated 90 degrees to said at least one front UV lamphouse.
    [9" claim-type="Currently amended] The method of claim 1, wherein the output of the UV radiation light source is a pulse train, wherein the pulse train performs a UV heat treatment and a light treatment step on the substrate, characterized in the number of pulses per second and energy per pulse of the UV radiation. Device.
    [10" claim-type="Currently amended] 10. The method according to claim 9, wherein the control device generates the at least two average power levels by modulating the number of pulses per second and / or the energy per pulse in the pulse train. Device.
    [11" claim-type="Currently amended] A method of performing UV photochemical treatment on a semiconductor substrate, the substrate having a front side and a back side,
    At least one heat treatment step wherein UV radiation is provided to the substrate at a heat treatment power to heat the substrate; And
    At least one reaction step in which UV radiation is provided at a reaction power, the UV reaction step comprising interacting with at least one photochemical reaction chemical causing a chemical reaction that affects the treatment of the substrate A method of performing UV photochemical treatment on a substrate.
    [12" claim-type="Currently amended] 12. The method of claim 11, wherein the UV radiation source comprises a total radiation power density integrated in at least a portion of the substrate surface at a wavelength of 0.1 to 1.0 micron of at least 0.3 Watts / cm < 2 > during the at least one heat treatment step. UV photochemical treatment on a semiconductor substrate, wherein the power delivered to at least a portion of the surface and delivered to the substrate in the at least one heat treatment step exceeds the power delivered to the substrate in the at least one reaction step. How to do processing.
    [13" claim-type="Currently amended] 12. The method of claim 11, wherein the at least one photochemical reaction chemical is present on the surface of the substrate.
    [14" claim-type="Currently amended] 12. The method of claim 11, wherein the at least one photochemical reaction chemical is present in a gaseous environment.
    [15" claim-type="Currently amended] 15. The method of claim 14, wherein said at least one photochemical reaction chemical is a halogenated gas.
    [16" claim-type="Currently amended] 12. The method of claim 11, wherein the heat treatment of the substrate is controlled by pulsing the UV radiation at a predetermined rate.
    [17" claim-type="Currently amended] 12. The method of claim 11, wherein said UV light source is operated at such a power level to maintain or increase the temperature of said substrate during said photochemical step.
    [18" claim-type="Currently amended] 12. The method of claim 11, wherein the UV radiation is provided at the front and back of the substrate.
    [19" claim-type="Currently amended] 12. The method of claim 11, wherein said UV radiation is provided only on one side of said substrate.
    [20" claim-type="Currently amended] 12. The method of claim 11, wherein at least one photochemical reaction chemical is present in the gaseous environment or on the surface of the substrate during the at least one heat treatment step. .
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    同族专利:
    公开号 | 公开日
    EP1131845A1|2001-09-12|
    CN1155990C|2004-06-30|
    WO2000030157A1|2000-05-25|
    JP2002530859A|2002-09-17|
    CN1337062A|2002-02-20|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-11-16|Application filed by 에프 에스 아이 인터내셔날,인코포레이티드
    1998-11-16|Priority to PCT/US1998/024491
    2001-12-07|Publication of KR20010107966A
    优先权:
    申请号 | 申请日 | 专利标题
    PCT/US1998/024491|WO2000030157A1|1998-11-16|1998-11-16|Equipment for uv wafer heating and photochemical processing|
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