• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
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    • 专利摘要:
    PURPOSE: A light emitting element, a plasma display panel, and a CRT display device capable of considerably suppressing a high-frequency noise are provided to suppress a high-frequency noise and achieve the suppression effect with useless space in the display device, and effectively absorb interference electromagnetic waves within a frequency band between MHz and GHz in the plasma display panel. CONSTITUTION: In a display device(70) having a display window(73,), a magnetic loss layer or layer(75) is formed on at least a part of a principal surface of the display window(73). The magnetic loss layer(75) may be a granular magnetic thin layer which is, for example, made of a magnetic substance of a magnetic composition comprising M, X and Y, where M is a metallic magnetic material consisting of Fe, Co, and/or Ni, X being element or elements other than M and Y, and Y being F, N, and/or O. The magnetic loss layer(75) may be formed in any one selected from mat, lattice, stripe, and speck fashions. The magnetic loss layer may be formed in a mesh fashion.
    公开号:KR20010095324A
    申请号:KR1020010017978
    申请日:2001-04-04
    公开日:2001-11-03
    发明作者:신야 와타나베；코지 카메이；히로시 오노；시게요시 요시다；미치오 네모토
    申请人:도낀 가부시끼가이샤；
    IPC主号:
    专利说明:

    Light-Emitting Elements, Plasma Display Panels, and CRT Display Devices That Can Suppress High-Frequency Noise
    [44] The present invention relates to a display device such as a light emitting element having a light emitting window, a plasma display panel (PDP), and a cathode ray tube (CRT) display device.
    [45] In recent years, highly integrated semiconductor devices that can operate at high speed have been widely spread and their use is gradually increasing. As active devices using semiconductor devices, random access memory (RAM), read only memory (ROM), microprocessor (MPU), central processing unit (CPU), and image processing arithmetic logic device (IPALU) are known. The active element described above is continually improved such that the operating speed and / or signal processing speed is rapidly increased. Under such circumstances, electricity transmitted at high speeds involves a dramatic change in voltage or current. The change is a major factor in the generation of high frequency noise.
    [46] On the other hand, the reduction in the weight, thickness, and size of electronic devices or electronic devices continues to progress rapidly. As a result, the degree of integration of semiconductor devices and the density of mounting electronic devices on printed circuit boards are significantly increased. In this case, the high density integrated or mounted electronic elements and the signal lines are very close to each other. With the increase in the signal processing speed mentioned above, the high density arrangement can easily induce high frequency noise.
    [47] The high frequency noise may be propagated from a light emitting element such as, for example, a laser diode for an optical disc drive used in optical pickup. This is because the laser diode can operate at high speed, in which case the laser diode emits or emits light (infrared) and high frequency noise.
    [48] However, conventionally, no method for high frequency noise emitted from the above-mentioned light emitting element is taken.
    [49] On the other hand, as one of the display devices, a plasma display panel (hereinafter also referred to as "PDP") is known. In the manner described below in conjunction with FIG. 12, a conventional plasma display panel is composed of first and second glass plates opposing each other with a gap between the plates. The first glass plate is disposed at the front side and the second glass plate is disposed at the rear side. Thus, the first glass plate is referred to as the front glass plate, and the second glass plate is referred to as the rear glass plate. The front glass plate and the rear glass plate have first and second major surfaces on opposite sides, respectively. A plurality of front electrodes extend in a predetermined direction parallel to each other and are formed on the first major surface of the front glass plate. Each front electrode is formed as a transparent electrode composed of a transparent material such as SnO 2 or ITO. Multiple front electrodes are covered with a first dielectric layer. The plurality of back electrodes extend in a predetermined direction and a vertical direction parallel to each other and are formed on the second major surface of the back glass plate. Each back electrode consists of Ag, for example. The plurality of back electrodes are covered with a second dielectric layer. A plurality of blocking ribs is disposed between the first and second dielectric layers.
    [50] The plasma display panel is referred to as an opposing discharge plasma display panel. The plasma display panel generates discharge light rays between the front electrode and the rear electrode observed through the front electrode acting as the transparent electrode. Accordingly, the plasma display panel generates or emits electromagnetic waves from the entire surface of the plasma display panel according to the discharge principle. The generated electromagnetic waves function as interfering electromagnetic waves in other parts or other devices. In the manner described below with reference to FIG. 13, as a measurement for suppressing interfering electromagnetic waves, the front glass plate is separated into two sub plates in the thickness direction, and a conductive mesh is disposed between the two sub plates.
    [51] However, a method for suppressing interfering electromagnetic waves for a conventional plasma display panel has the following result. First, the conventional plasma display panel is increased because the number of parts is increased and the working time required for the assembly is also increased because the front plate is separated into two sub plates in the conventional plasma display panel. Next, the conductive mesh disposed in the front plate is Resulting in a decrease in the optical properties. Next, with regard to absorption of electromagnetic waves in the conductive net, the conductive net has a limited frequency band in the frequency band of megahertz (MHz) capable of absorbing the electromagnetic wave. That is, the conventional plasma display panel is not preferable in that the conductive network cannot prevent the absorption of electromagnetic waves in the frequency band of gigahertz (GHz) which is recently issued.
    [52] As another display device, a cathode ray tube (hereinafter referred to as "CRT") display device is known. In a conventionally known manner, cathode ray tube display devices are used, for example, as television (TV) image tubes of television sets, monitors for personal computers, and the like. Originally, cathode ray tubes (CRT) are known as Braun tubes or electron beam tubes. In the manner described below with respect to Fig. 22, a conventional CRT display device is composed of a cathode ray tube or a glass tube having an empty space and a deflection yoke therein. The cathode ray tube includes a display panel having an inner surface, a fluorescent material having a predetermined pattern formed on the inner surface of the display panel, a shadow mask facing the display panel with the fluorescent material disposed therebetween, and an electron gun do. The electron gun emits an electron beam that passes through one of the hollow holes of the shadow mask to strike the position of the fluorescent material and diverge the position of the fluorescent material.
    [53] Conventional CRT display devices generate or radiate interfering electromagnetic waves when the electron beam strikes the position of the fluorescent material and the position is diverged. In the manner described below with respect to FIG. 23, as a method for suppressing interfering electromagnetic waves in a conventional CRT display apparatus, a conductive mesh is embedded in a display panel of a cathode ray tube.
    [54] However, the aforementioned conventional CRT display device provided with a conductive mesh is undesirable in that the image quality of the device is poor, which prevents the diffusion of fluorescent material and the conductive mesh has a low batch density, thereby improving image quality. It is because it has the interference electromagnetic wave of low absorption efficiency when improving. The conventional CRT display apparatus described above provided with a conductive mesh is also undesirable in that the manufacturing cost of the device is high, so that the conductive mesh is embedded in the display panel. In addition, the conductive mesh has a limited frequency band of the frequency band of MHz capable of absorbing electromagnetic waves. That is, a conventional CRT display device provided with a conductive net is not preferable in that it cannot absorb electromagnetic waves in the frequency band of GHz where the conductive net is recently issued.
    [55] Accordingly, it is an object of the present invention to provide a display device capable of suppressing high frequency noise.
    [56] Another object of the present invention is to provide a display device of the type described, which can achieve the above-mentioned suppression effect in an unused space.
    [57] It is an object of the present invention to provide a plasma display panel which can effectively absorb interfering electromagnetic waves in a frequency band between MHz and GHz.
    [58] Another object of the present invention is to provide a plasma display panel of the type described, in which the divergence characteristic of the plasma display panel is not disturbed.
    [59] It is a further object of the present invention to provide a plasma display panel of the type described, wherein a larger quantity is produced.
    [60] It is an object of the present invention to provide a CRT display device capable of effectively absorbing interfering electromagnetic waves in a frequency band between MHz and GHz.
    [61] Another object of the present invention is to provide a CRT display apparatus of the type described, in which the divergence characteristic of the CRT display apparatus is not disturbed.
    [62] It is a further object of the present invention to provide a CRT display device of the type described, wherein a larger quantity is produced.
    [63] Other objects of the present invention will become apparent from the detailed description.
    [1] 1 is a schematic diagram showing the grain structure of an M-X-Y magnetic composition.
    [2] 2A is a schematic cross-sectional view showing the structure of a sputtering apparatus used in the embodiment.
    [3] 2B is a schematic cross-sectional view showing a vapor deposition apparatus structure used in the embodiment.
    [4] 3 is a graph depicting the permeability frequency response of membrane sample 1 of Example 1. FIG.
    [5] 4 is a graph depicting the permeability frequency response of membrane sample 2 of Example 2. FIG.
    [6] 5 is a graph showing the permeability frequency response of Comparative Sample 1 of Comparative Example 1. FIG.
    [7] 6 is a schematic perspective view of an apparatus for testing noise suppression effect of magnetic specimens.
    [8] 7A is a graph depicting the transfer characteristics of membrane sample 1. FIG.
    [9] 7B is a graph showing the transfer characteristics of a comparative specimen of a synthetic magnetic material sheet.
    [10] 8A is a distributed integer circuit of length l representing a magnetic material as a noise suppressor.
    [11] Fig. 8B is an equivalent circuit of unit length Δl of the distributed constant circuit of Fig. 9A.
    [12] 8C is an equivalent circuit of length l of the distributed constant circuit of FIG. 9A.
    [13] 9A is a graph showing the frequency response of the equivalent resistance R of the film sample 1 of Example 1. FIG.
    [14] 9B is a graph showing the frequency response of the equivalent resistance R of a comparative sample of a synthetic magnetic material sheet.
    [15] 10 is a plan view of a light emitting device (laser diode) according to an embodiment of the present invention.
    [16] 11 is a plan view of a light emitting device (laser diode) according to another embodiment of the present invention.
    [17] 12 is an exploded perspective view showing a part of a conventional plasma display panel.
    [18] FIG. 13 is an exploded perspective view of a conventional front glass substrate for noise measurement used in the conventional plasma display panel shown in FIG. 12;
    [19] 14 is an exploded perspective view showing a part of the plasma display panel according to the first embodiment of the present invention;
    [20] 15 is an exploded perspective view showing a part of a plasma display panel according to a second embodiment of the present invention;
    [21] 16 is an exploded perspective view showing a portion of a plasma display panel according to a third embodiment of the present invention.
    [22] 17 is an exploded perspective view showing a portion of a plasma display panel according to a fourth embodiment of the present invention.
    [23] 18 is an exploded perspective view showing a part of a plasma display panel according to a fifth embodiment of the present invention;
    [24] 19 is an exploded perspective view showing a part of a plasma display panel according to a sixth embodiment of the present invention;
    [25] 20 is an exploded perspective view showing a portion of a plasma display panel according to a seventh embodiment of the present invention.
    [26] 21 is an exploded perspective view showing a part of a plasma display panel according to an eighth embodiment of the present invention;
    [27] 22 is a cross-sectional view of a conventional cathode ray tube (CRT) display device.
    [28] 23 is a cross-sectional view of another conventional cathode ray tube (CRT) display device in which noise is measured.
    [29] 24 is a cross-sectional view of a cathode ray tube (CRT) display device according to a first embodiment of the present invention.
    [30] 25 is an enlarged cross-sectional view of the display panel for the CRT display device of FIG. 24;
    [31] FIG. 26 is a partially enlarged perspective view of the display panel for the CRT display device of FIG. 24; FIG.
    [32] 27 is a cross sectional view of a cathode ray tube (CRT) display device according to a second embodiment of the present invention;
    [33] 28 is an enlarged perspective view of the display panel for the CRT display device of FIG. 27;
    [34] 29 is an enlarged perspective view of a display panel for a cathode ray tube (CRT) display device according to a third embodiment of the present invention;
    [35] 30 is an enlarged perspective view of a display panel for a cathode ray tube (CRT) display device according to a fourth embodiment of the present invention;
    [36] 31 is an enlarged perspective view of a display panel for a cathode ray tube (CRT) display device according to a fifth embodiment of the present invention;
    [37] 32 is an enlarged perspective view of a display panel for a cathode ray tube (CRT) display device according to a sixth embodiment of the present invention;
    [38] 33 is an enlarged perspective view of a display panel for a cathode ray tube (CRT) display device according to a seventh embodiment of the present invention.
    [39] * Description of symbols on the main parts of the drawings *
    [40] 70 light emitting element 71 base
    [41] 72: laser diode chip 73: light emitting window
    [42] 73a: major surface 74: legs
    [43] 75: magnetic loss layer
    [64] According to a first aspect of the invention, there is provided a display device comprising a display window having a major surface. The display device consists of a magnetic loss layer formed on at least a portion of the major surface.
    [65] According to a second aspect of the invention, there is provided a light emitting element comprising a light emitting window having a major surface. The light emitting element is composed of a magnetic loss layer formed on at least part of the surface of the main surface.
    [66] According to a third aspect of the invention, there is provided a plasma display panel comprising a front glass plate having an outer surface. The plasma display panel is composed of a magnetic loss layer formed on the outer surface.
    [67] According to a fourth aspect of the invention, there is provided a plasma display panel comprising a front glass plate having an inner surface. The plasma display panel is composed of a magnetic loss layer formed on the inner surface.
    [68] According to a fifth aspect of the present invention, there is provided a cathode ray tube (CRT) display device composed of a cathode ray tube including a display panel having an inner surface. The CRT display device is composed of a magnetic loss layer formed on the inner surface.
    [69] According to a sixth aspect of the present invention, there is provided a cathode ray tube (CRT) display device composed of a cathode ray tube including a display panel having an outer surface. The CRT display device is composed of a magnetic loss layer formed on the outer surface.
    [70] Before describing the display device according to the present invention, the magnetic loss layer used in the display device according to the present invention will first be described. The magnetic loss layer has a grain structure.
    [71] Now, the grain structure and the M-X-Y self-synthesis method will be described.
    [72] In FIG. 1 schematically showing the grain structure of M-X-Y magnetic synthesis, particles 11 of metallic magnetic material M are evenly or evenly distributed in a matrix 12 composed of X and Y.
    [73] In FIG. 2A, the sputtering apparatus shown was used to form specimens in the following examples and comparative examples. The sputtering apparatus has a conventional structure and has a vacuum vessel 20, a shutter 21, a gas source 22, a substrate or a glass plate 23, a chip 24 (X or XY), a target 25 (M), RF power source, and vacuum pump 27. The gas source 22 and the vacuum pump 27 are connected to the vacuum vessel 20. The substrate 23 is aligned with the target 25 on which the chip 24 is disposed. The shutter 21 is disposed in front of the substrate 23. The RF power source 26 is connected to the target 25.
    [74] In FIG. 2B, the deposition apparatus shown is another apparatus used to form specimens in the following and comparative examples. The deposition apparatus has a conventional structure and includes a vacuum vessel 20, a gas source 22, and a vacuum pump 27 similar to a sputtering apparatus, but with a chip 24, a target 25, and an RF power source 26. Instead, it is composed of a crucible containing a substance XY.
    [75] Example 1
    [76] The M-X-Y self-synthesizing thin film is formed on the glass plate under the sputtering conditions shown in Table 1 using the sputtering device shown in FIG. 2A.
    [77] Table 1
    [78] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr gas Power sourceRF targetFe (100 mm diameter) and Al 2 O 3 chips (120) (Chip size: 5mm * 5mm * 2mm)
    [79] Membrane Sample 1 formed was analyzed by fluorescence X-ray spectroscopy and identified as a membrane of the composition Fe 72 Al 11 O 17 . Membrane Sample 1 includes a thickness of 2.0 micrometers (μm), a DC resistivity of 530 micro ohm centimeters (μΩ · cm), an anisotropic field (Hk) of 18 Oe, and a saturation susceptibility (Ms) of 16,800 gauss.
    [80] The saturation susceptibility of Membrane Sample 1 and the percentage of metal material M, {Ms (M-X-Y) / Ms (M)} × 100, is 72.2%.
    [81] In order to measure the permeability frequency response, the membrane specimen 1 is formed into a ribbon and inserted into the coil. Under the application of the bias magnetic field, the impedance variation of the coil is measured in response to the frequency change of the AC current used in the coil. The measurement is made several times to obtain different values of the bias magnetic field. From the impedance variation measured in response to the frequency variation, the permeability frequency response (μ "-frequency response) is calculated, which is shown in Figure 3. The imaginary part of the relative permeability has a high peak or maximum value (μ" max ) and peaks It will be noted from FIG. 3 that it is rapidly reduced to the other side. The natural resonant frequency f (μ " max ) representing the maximum value μ" max is about 700 MHz. From the μ "-frequency response, the relative bandwidth bwr is the half value (μ" 50 ) of the maximum value (μ " max ) at the center frequency of the bandwidth as the percentage of the bandwidth between two frequency points showing the imaginary part of the relative permeability. The relative bandwidth bwr is 148%.
    [82] Example 2
    [83] 150 Al 2 O 3 chips are used, but under similar conditions as in Example 1, film sample 2 is formed on a glass plate.
    [84] Membrane Sample 2 formed is analyzed by fluorescence X-ray spectroscopy and identified as a membrane of the composition Fe 44 Al 22 O 34 . Membrane Sample 2 includes a thickness of 1.2 micrometers (μm), a DC microresistance of 2400 microohm centimeters (μΩ · cm), an anisotropic field (Hk) of 120 Oe, and a saturation susceptibility (Ms) of 9600 gauss. Membrane Sample 2 is higher than Membrane Sample 1 in resistivity.
    [85] The saturation susceptibility of Membrane Sample 2 and the percentage of metal material M, {Ms (M-X-Y) / Ms (M)} × 100, are 44.5%.
    [86] The μ ″ -frequency response of membrane sample 2 is obtained in a similar manner to Example 1 and is shown in Fig. 4. The peak value also has a high value similar to membrane sample 1. However, the frequency point at the peak, or the natural resonant frequency Is about 1 GHz and the imaginary part of the relative permeability gradually falls off the other side of the peak and the μ "-frequency response is broadband.
    [87] The relative bandwidth of membrane sample 2 is also identified as 181% in a similar manner to Example 1.
    [88] Comparative Example 1
    [89] 90 Al 2 O 3 chips were used, but under similar conditions as in Example 1, Comparative Sample 1 was formed on a glass plate.
    [90] Membrane Sample 1 formed is analyzed by fluorescence X-ray spectroscopy and identified as a membrane of the composition Fe 88 Al 6 O 8 . Comparative Sample 1 has a thickness of 1.2 micrometers (μm), a DC resistivity of 74 micro ohm centimeters (μΩcm), an anisotropic field of 22 Oe (Hk), and a saturation susceptibility (Ms) of 18,800 gauss. The percentage of the saturation susceptibility of the sample 1 and that of the metal material M, {Ms (MXY) / Ms (M)} × 100, is 85.7%.
    [91] The μ "-frequency response of Comparative Sample 1 is obtained in a similar manner to Example 1 and this is shown in Figure 5. The imaginary part of the relative permeability μ" of Comparative Sample 1 has a high peak at a frequency of about 10 MHz, but 10 MHz It will be noted from FIG. 5 that it rapidly decreases in the above frequency range. This reduction can be judged to be caused by the generation of eddy currents due to the low resistivity.
    [92] Comparative Example 2
    [93] 200 Al 2 O 3 chips are used, but under similar conditions as in Example 1, Comparative Sample 2 is formed on a glass plate.
    [94] Membrane Sample 2 formed was analyzed by fluorescence X-ray spectroscopy and identified as a membrane of the composition Fe 19 Al 34 O 47 . Comparative Sample 2 includes a thickness of 1.3 micrometers (μm) and a DC resistivity of 10,500 micro ohm centimeters (μΩcm).
    [95] Magnetic properties of Comparative Sample 1 indicate superparamagnetism.
    [96] Example 4
    [97] The MXY self-synthesizing thin film is formed on the glass plate under the sputtering conditions shown in Table 2 by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A. The partial pressure ratio of N 2 is 20%. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the resulting film sample 4.
    [98] TABLE 2
    [99] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr + N 2 gas Power sourceRF targetFe (100 mm diameter) and Al 2 O 3 chips (150) (Chip size: 5mm * 5mm * 2mm)
    [100] The properties of membrane sample 4 are shown in Table 3.
    [101] TABLE 3
    [102] Film thickness1.5 μm {Ms (M-X-Y) / Ms (M)} × 10051.9% μ " max 520 f (μ " max )830 MHz bwr175%
    [103] Example 5
    [104] The M-X-Y self-synthesizing thin film is formed on the glass plate under the sputtering conditions shown in Table 4 by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the resulting film sample 5.
    [105] Table 4
    [106] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr gas Power sourceRF targetFe (100 mm diameter) and Al 2 O 3 chips (130) (Chip size: 5mm * 5mm * 2mm)
    [107] The properties of membrane sample 5 are shown in Table 5.
    [108] Table 5
    [109] Film thickness1.1 μm {Ms (M-X-Y) / Ms (M)} × 10064.7% μ " max 850 f (μ " max )800 MHz bwr157%
    [110] Example 6
    [111] The MXY self-synthesizing thin film is formed on the glass plate by the reactive sputtering method shown in Table 6 using the sputtering apparatus shown in Fig. 2A. The partial pressure ratio of N 2 is 10%. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the resulting film sample 6.
    [112] Table 6
    [113] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr + N 2 gas Power sourceRF targetCo (100mm in diameter) and Al chips (170) (Chip size: 5mm * 5mm * 2mm)
    [114] The properties of membrane sample 6 are shown in Table 7.
    [115] TABLE 7
    [116] Film thickness1.2 μm {Ms (M-X-Y) / Ms (M)} × 10032.7% μ " max 350 f (μ " max )1 GHz bwr191%
    [117] Example 7
    [118] The M-X-Y self-synthesizing thin film is formed on the glass plate under the sputtering conditions shown in Table 8 by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the obtained film specimen 7.
    [119] Table 8
    [120] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr gas Power sourceRF targetNi (100 mm diameter) and Al 2 O 3 chips (140) (Chip size: 5mm * 5mm * 2mm)
    [121] The properties of membrane sample 4 are shown in Table 9.
    [122] Table 9
    [123] Film thickness1.7 μm {Ms (M-X-Y) / Ms (M)} × 10058.2% μ " max 280 f (μ " max )240 MHz bwr169%
    [124] Example 8
    [125] The MXY self-synthesizing thin film is formed on the glass plate under the sputtering conditions shown in Table 10 by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A. The partial pressure ratio of N 2 is 10%. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the obtained film specimen 8.
    [126] Table 10
    [127] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr + N 2 gas Power sourceRF targetNi (100 mm diameter) and Al chips (100 pieces) (Chip size: 5mm * 5mm * 2mm)
    [128] The properties of membrane sample 10 are shown in Table 11.
    [129] Table 11
    [130] Film thickness1.3 μm {Ms (M-X-Y) / Ms (M)} × 10076.2% μ " max 410 f (μ " max )170 MHz bwr158%
    [131] Example 9
    [132] The M-X-Y self-synthesizing thin film is formed on the glass plate under the sputtering conditions shown in Table 12 by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the obtained film specimen 9.
    [133] Table 12
    [134] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr gas Power sourceRF targetFe (100 mm diameter) and TiO 2 chips (150) (Chip size: 5mm * 5mm * 2mm)
    [135] The properties of membrane sample 9 are shown in Table 13.
    [136] Table 13
    [137] Film thickness1.4 μm {Ms (M-X-Y) / Ms (M)} × 10043.6% μ " max 920 f (μ " max )1.5 GHz bwr188%
    [138] Example 10
    [139] The MXY self-synthesizing thin film is formed on the glass plate under the sputtering conditions shown in Table 14 by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A. The partial pressure ratio of O 2 is 15%. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the resulting film sample 10.
    [140] Table 14
    [141] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr + O 2 gas Power sourceRF targetFe (diameter 100 mm) and Si chips (130) (Chip size: 5mm * 5mm * 2mm)
    [142] The properties of membrane sample 10 are shown in Table 15.
    [143] Table 15
    [144] Film thickness1.5 μm {Ms (M-X-Y) / Ms (M)} × 10055.2% μ " max 920 f (μ " max )1.2 GHz bwr182%
    [145] Example 11
    [146] The M-X-Y self-synthesizing thin film is formed on the glass plate with the sputtering conditions shown in Table 16 by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the resulting film sample 11.
    [147] Table 16
    [148] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr gas Power sourceRF targetFe (100 mm diameter) and HfO 3 chips (100) (Chip size: 5mm * 5mm * 2mm)
    [149] The properties of membrane sample 11 are shown in Table 17.
    [150] Table 17
    [151] Film thickness1.8 μm {Ms (M-X-Y) / Ms (M)} × 10077.4% μ " max 1800 f (μ " max )450 MHz bwr171%
    [152] Example 12
    [153] The M-X-Y self-synthesizing thin film is formed on the glass plate under the sputtering conditions shown in Table 18 by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the resulting film sample 12.
    [154] Table 18
    [155] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr gas Power sourceRF targetFe (diameter 100 mm) and BN chips (130) (Chip size: 5mm * 5mm * 2mm)
    [156] The properties of membrane sample 19 are shown in Table 19.
    [157] Table 19
    [158] Film thickness1.9 μm {Ms (M-X-Y) / Ms (M)} × 10059.3% μ " max 950 f (μ " max )680 MHz bwr185%
    [159] Example 13
    [160] The M-X-Y self-synthesizing thin film is formed on the glass plate with the sputtering conditions shown in Table 20 by the reactive sputtering method using the sputtering apparatus shown in FIG. 2A. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the resulting film sample 13.
    [161] Table 20
    [162] Degree of vacuum before sputtering<1 × 10 -6 Torr atmosphereAr gas Power sourceRF targetFe 50 Co 50 (100 mm diameter) and Al 2 O 3 chips (130 pcs) (Chip size: 5mm * 5mm * 2mm)
    [163] The properties of membrane sample 13 are shown in Table 21.
    [164] Table 21
    [165] Film thickness1.6 μm {Ms (M-X-Y) / Ms (M)} × 10059.3% μ " max 720 f (μ " max )1.1 GHz bwr180%
    [166] Example 14
    [167] The M-X-Y self-synthesizing thin film is formed on the glass plate under the sputtering conditions shown in Table 22 by the reactive sputtering method using the sputtering apparatus shown in FIG. 2B. The thin film is heat-treated at a temperature of 300 ° C. for 2 hours in the vacuum of the magnetic field and the resulting film sample 14.
    [168] Table 22
    [169] Degree of vacuum before sputtering<1 × 10 -6 Torr Gas inflow rate3.0 sccm O 2Ingredients in Crucibles 28 and 29Fe and Al
    [170] The properties of membrane sample 14 are shown in Table 23.
    [171] Table 23
    [172] Film thickness1.1 μm {Ms (M-X-Y) / Ms (M)} × 10041.8% μ " max 590 f (μ " max )520 MHz bwr190%
    [173] Now, using the test apparatus shown in FIG. 6, a test on noise and a comparative sample that suppresses the sample film effect will be described.
    [174] The test piece is Membrane Specimen 1 measuring 20 mm × 20 mm × 2.0 μm. For comparison, known synthetic magnetic sheets have dimensions of 20 mm x 20 mm x 1.0 mm. Synthetic magnetic materials consist of polymer and planar magnetic metal powder dispersed in the polymer. Magnetic metal powder is composed of Fe, Al and Si. Synthetic magnetic material has a permeability distribution within the quasi-microwave range and has a maximum of the imaginary part of the relative permeability at a frequency of about 700 MHz. Table 24 has the magnetic properties of both the test piece and the comparative test piece.
    [175] Table 24
    [176] Membrane specimen 1Comparative test piece μ "/ 700 MHzAbout 1800About 3.0 bwr148196
    [177] As shown in Table 24, Membrane Sample 1 is about 600 times the comparative test piece at the maximum of the imaginary part of the relative permeability. Since the noise suppression effect is generally evaluated from the maximum value of the imaginary part of the relative permeability (μ " max ) and the value of the product of the thickness of the piece δ (μ" max × δ), the comparative test piece of the synthetic magnetic material sheet The thickness of the two test pieces has a similar value of (μ " max x δ).
    [178] In FIG. 6, the test apparatus includes a micro-strip line 61 having two terminals, a coaxial cable 62 connected to two terminals, and a network analyzer (not shown) connected between the two terminals. . The micro-strip line 61 has a line length of 75 mm and a characteristic impedance of 50 ohms. The test piece 63 is arranged in the region 64 on the micro-strip line 61 and the transmission characteristics S21 and the frequency characteristics of S21 are measured. The frequency response of S21 is shown in FIGS. 7A and 7B for Membrane Sample 1 and Comparative Sample, respectively.
    [179] For use of Membrane Sample 1, S21 decreases above 100 MHz and increases to above 2 GHz after at least -10 dB at a frequency of 2 GHz. On the other hand, for the use of the comparative sample, S21 gradually decreases to a minimum of -10 dB at a frequency of 3 GHz.
    [180] The results demonstrate that S21 depends on the frequency distribution of the permeability and the noise suppression effect depends on the (μ " max x δ) product.
    [181] Now, if the magnetic sample forms a distributed integer circuit of length 1 as shown in Fig. 8A, the equivalent circuit is calculated for the unit length [Delta] l from the transmission characteristics S11 and S21, as shown in Fig. 8B. At this time, the equivalent circuit for the length l is obtained from the equivalent circuit for the unit length Δl, as shown in Fig. 8C. The magnetic sample equivalent circuit consists of a series inductance L and a series resistance R and a parallel capacitance C and a parallel conductance G, as shown in FIG. 8C. From this, the change in the transmission characteristics of the micro-strip line caused by the placement of the magnetic material on the micro-strip line is mainly determined by the equivalent resistance R added in series.
    [182] In view of the above, the frequency response of the equivalent resistance R is measured. Measured data are shown for membrane sample 1 and comparative samples, respectively, in FIGS. 9A and 9B. It will be noted from this figure that the equivalent resistance R gradually decreases within the pseudo-microwave range to about 60 ohms at about 3 GHz. The frequency dependence of the equivalent resistor R differs from the frequency dependence of the imaginary part of the relative permeability with a maximum at about 1 GHz. This difference will be based on a gradual increase in the proportion of the enemy and the sample length of the wavelength.
    [183] 10, a display apparatus according to an embodiment of the present invention will be described. The display device described illustrates a light emitting element 70. The light emitting element 70 described is a laser diode for an optical disc drive used in optical pickup.
    [184] The light emitting element (laser diode 70) includes a base 71, a laser diode chip 72 mounted on the base 71, and a resin light emitting window 73 attached to the base 71 to cover the laser diode chip 72. ) And three legs 74 extending from the base in the opposite direction to the light emitting window 73. The light emitting window 73 serves as a display window of the display device. The light emitting window 73 has a major surface 73a.
    [185] According to the first embodiment of the present invention, in the light emitting element (laser diode) 70 having the above structure, the magnetic loss layer or film 75 is formed under the main surface 73a of the light emitting window 73 (base 71). ) Is formed on the side). In the embodiment described, the magnetic loss layer 75 is formed into a mesh shape. In other words, the magnetic loss layer 75 is a mesh magnetic loss layer.
    [186] The reason why the mesh magnetic loss layer 75 is formed below the main surface 73a of the light emitting window 73 is that the laser beam emitted from the laser diode chip 72 is interfered by the mesh magnetic loss layer 75. This is because the light passes through the light emitting window 73 without being received.
    [187] As the mesh magnetic loss layer 75, a grain magnetic thin film layer or thin film can be used in the manner described above. The grain magnetic thin film layer may be manufactured by a sputtering process, a vapor deposition process, or a reactive sputtering process. In other words, the grain magnetic thin film layer may be a sputtered film formed by a sputtering process or a reactive sputtering process or a vapor deposition film formed by a vapor deposition process. When producing a grain magnetic thin film layer, the above-mentioned sputtered film or the above-mentioned vapor deposited film is actually heat-treated to a predetermined temperature for a predetermined time interval in a vacuum state under a magnetic field.
    [188] In the above-described embodiment of the present invention, since the formation of the mesh type magnetic loss layer (grain magnetic thin film layer 75) is necessary, the mesh type magnetic loss layer is formed using a sputtered film or mask formed by a sputtering process using a mask. To form a vapor deposition film formed by a vapor deposition process, or a cross hatching film formed by crosshatching a magnetic loss wiring made of grain magnetic material.
    [189] Although the grain magnetic thin film layer has a thin film thickness of, for example, 2.0 μm or less, the grain magnetic thin film layer formed in the above-described manner has a very large magnetic loss at high frequencies in the frequency band of several tens of MHz to several GHz. This has already been confirmed.
    [190] Further, according to the present invention, a grain magnetic thin film layer having a distribution of an imaginary part (i.e., "magnetic loss period") [mu] of relative permeability in the pseudo microwave band has a thickness of about 500 times the thickness of the grain magnetic thin film layer. It has already been confirmed through experiments of the present invention that it has the same high frequency noise suppression effect as that in a complex magnetic sheet, therefore the grain magnetic thin film layer according to the present invention can be operated at a high speed clock of, for example, about 1 GHz. It is expected as a magnetic material used in the suppression of electromagnetic interference (EMI) in semiconductor integrated devices.
    [191] Although an embodiment manufactured using a sputtering process using a mask, a vapor deposition process, or a reactive sputtering process is illustrated as a method of manufacturing a grain magnetic thin film layer in the embodiment of the present invention, when forming a grain magnetic thin film layer, vacuum deposition is performed. Other manufacturing methods such as processes, ion beam deposition processes, or gas deposition processes can be used. If the manufacturing method can uniformly form the magnetic loss layer according to the present invention, the method cannot be limited.
    [192] In addition, while the heat treatment after layer formation is performed in a vacuum under a magnetic field in the above-described embodiment, the heat treatment after layer formation is a composition or method for forming a layer in which a grain magnetic thin film layer is formed by a gas deposition process and the performance of the present invention is obtained. Branches are unnecessary if they are layers.
    [193] Further, although the laser diode is illustrated as the light emitting element 70 and the magnetic loss layer 75 is formed on the main surface 73a of the light emitting window 73 of the laser diode in the above-described embodiment, the display device is a remote controller. May be formed on the main surface of the light emitting window. The display device may be an active-matrix liquid crystal display device composed of a plurality of thin film transistors (TFTs), and a magnetic loss layer may be formed on the main surface of the display window. In addition, while the mesh type magnetic loss layer 75 is formed on the main surface 73a of the light emitting window 73 of the light emitting element 70 in the above-described embodiment, the mesh type magnetic loss layer is, for example, a light emitting window. All of the entire surface 73a on the major surface 73a of the 73 cannot be covered. The magnetic loss layer may be formed in the shape of checkers instead of stripes, lattice, or mesh. In any case, a magnetic loss layer can be formed in the space. Although the magnetic loss layer 75 of the light emitting element 70 is exemplified in the above-described embodiment when formed into a mesh as shown in FIG. 11, the sheet-shaped magnetic loss layer 75a of the light emitting element 70a is illustrated. Is such that the laser beam emitted from the laser diode chip 72 passes through the light emitting window 73 uninterrupted and is all lower part of the major surface of the light emitting window 73.
    [194] Further, although the case where the magnetic loss layer 75 is a grain magnetic thin film layer in the above-described embodiment is illustrated, the magnetic loss layer 75 cannot be limited to the grain magnetic thin film layer and has a high frequency in the frequency band between several tens of MHz and several GHz. Can be any layer with very large magnetic losses.
    [195] In Fig. 12, a conventional plasma display panel (PDP) 80 used as one of the display apparatuses will be described. The plasma display panel 80 'is composed of first and second glass plates 81 and 82 opposing each other with a gap therebetween. The first glass plate 81 is disposed at the front side and the second glass plate 82 is disposed at the rear side. Therefore, the first glass plate 81 is called a front glass plate and the second glass plate is called a rear glass plate. The front glass plate 81 serves as a display window. The front glass plate 81 and the rear glass plate 82 have front and rear inner surfaces 81a and 82a on opposite inner sides and front and rear outer surfaces 81b and 82b on opposite outer sides, respectively. The plurality of front electrodes 83 extend in predetermined directions parallel to each other and are formed on the front inner surface 81a of the front glass plate 81 when removed. Each front electrode 83 is formed as a transparent electrode composed of a transparent material such as SnO 2 or ITO. Multiple front electrodes 83 are covered with a first dielectric layer 84. The plurality of rear electrodes 85 extend in a predetermined direction and a vertical direction parallel to each other and are formed on the rear inner surface 82a of the rear glass plate 82 when removed. Each back electrode 85 is made of Ag, for example. The plurality of back electrodes 85 are covered with a second dielectric layer 86. Multiple blocking ribs 87 are disposed between the first and second dielectric layers 84, 85.
    [196] Discharge rare gases (not shown) are enclosed in the space between the front and back panes 81 and 82 in a fully sealed environment. The space is divided into a plurality of subspaces by blocking ribs, as shown in FIG. Discharge rare gases generate a lot of ultraviolet light during discharge.
    [197] The plasma display panel 80 is called a counter discharge plasma display panel. The plasma display panel 80 generates a discharge ray between the front electrode 84 and the rear electrode 85 viewed through the front electrode 83 which acts as a transparent electrode. Thus, the plasma display panel 80 'generates or emits electromagnetic waves from the panel surface of the plasma display panel 80' according to the discharge principle. The generated electromagnetic waves serve as interfering electromagnetic waves in other parts or other devices. As a method for suppressing interfering electromagnetic waves, as shown in FIG. 13, the front glass plate 81 ′ is divided into two sub-plates 811 ′ and 812 ′ in the thickness direction, and the conductive mesh 88 ′ is divided into two. It is disposed or inserted between the sub plates 811 ', 812'.
    [198] However, a method of suppressing interfering electromagnetic waves for a conventional plasma display panel is issued below. First of all, a conventional plasma display panel is undesirable in that the number of parts is increased, thereby increasing the working time required for assembly, which means that the front plate 81 'has two sub-plates 811', 812 in a conventional plasma display panel. Because it is divided into '). Next, the conductive mesh 88 'disposed in the front substrate 81' results in deterioration of the optical characteristics of the PDP. Next, regarding electromagnetic wave absorption in the conductive mesh 88 ', the conductive mesh 88' has a limited frequency band of MHz capable of absorbing electromagnetic waves. That is, the conventional plasma display panel is not preferable in that the conductive mesh 88 'cannot absorb electromagnetic waves in the frequency band of GHz which has recently been issued.
    [199] In FIG. 14, a plasma display panel (PDP) 80 according to a first embodiment of the present invention is described. The plasma display panel 80 is similar to the structure and operation of the conventional display panel 80 ′ shown in FIG. 12 except that the plasma display panel 80 further includes a magnetic loss layer 88.
    [200] The magnetic loss layer 88 is formed on the front outer surface 81b of the front plate 81. In the described embodiment, the magnetic loss layer 88 is formed in a mat shape. In other words, the magnetic loss layer 88 is a sheet-shaped magnetic loss layer covering the entire surface of the front outer surface 81b of the front plate 81.
    [201] Sheet-shaped magnetic loss layer 88 consists of a magnetic material of a magnetic composition comprising M, X and Y, M is a metal magnetic material consisting of Fe, Co, and / or Ni, and X is a different component than M and Y Or components, and Y is F, N, and / or O.
    [202] In the described embodiment, the sheet-shaped magnetic loss layer 88 is the composition Fe 72 Al 11 O 17 layer illustrated by Example 1 above. The sheet-shaped magnetic loss layer 88 having the above-mentioned composition has excellent absorption characteristics of electromagnetic waves in the frequency band, especially between the frequency bands of MHz and GHz and can sufficiently suppress the electromagnetic waves in the aforementioned frequency band generated from the PDP 80. Can be.
    [203] In addition, since the sheet-shaped magnetic loss layer 88 is a composition having an extremely large magnetic loss, the magnetic loss layer 88 can be made very thin as compared with a conventional sheet wave absorber. Thus, the sheet-shaped magnetic loss layer 88 may have a thickness of several tens of microns or less. At about 3 GHz, the absorption characteristics of the electromagnetic waves of the sheet-shaped magnetic loss layer 88 have the effect of absorbing electromagnetic waves from 9 decibels to 12 decibels over the entire area of the display surface compared to the case of a glass plate such as the conventional PDP shown in FIG. Have The method of manufacturing the sheet-shaped magnetic loss layer 88 may be a sputtering process or a vapor deposition process. In addition, the sheet-shaped magnetic loss layer 88 may be formed by a layer forming process except for the above-described sputtering processes such as, for example, chemical vapor deposition (CVD) processes.
    [204] In the manner described above, the manufacturing process of the sheet-shaped magnetic loss layer 88 described above can be easily introduced into the overall manufacturing process of the PDP 80.
    [205] 15, a plasma display panel (PDP) 80a according to a second embodiment of the present invention is described. The plasma display panel 80a is a view except that the sheet-shaped magnetic loss layer 88 is formed on the front inner surface 81a of the front plate 81 instead of the front outer surface 81b of the front plate 81. Similar to the structure and operation of the plasma display panel shown in FIG. In this structure, the plasma display panel 80a has similar advantages as the plasma display panel 80 shown in FIG.
    [206] In FIG. 16, a plasma display panel (PDP) 80b according to a third embodiment of the present invention is described. The plasma display panel 80b is similar to the structure and operation of the plasma display panel 80 of FIG. 14 except that the magnetic loss layer shown in FIG. 14 is modified, which will be apparent below. Thus, the magnetic loss layer is shown at 88a.
    [207] The magnetic loss layer 88a is formed in a lattice shape. In other words, the magnetic loss layer 88a is a lattice type magnetic loss layer. The lattice magnetic loss layer 88a is preferably arranged to correlate the arrangement of the front electrode 83 and the arrangement of the rear electrode 85.
    [208] The lattice magnetic loss layer 88a is made of a magnetic material similar to the magnetic material of the sheet magnetic loss layer 88 of FIG. 14. The lattice type magnetic loss layer 88a has excellent absorption characteristics of electromagnetic waves in the frequency band, especially between the MHz and GHz frequency bands, and can sufficiently suppress the electromagnetic waves in the aforementioned frequency band generated from the PDP 80b. In addition, since the magnetic loss layer 88a is a composition having an extremely large magnetic loss, the lattice magnetic loss layer 88a can be made very thin as compared with a conventional sheet wave absorber. Thus, the grating magnetic loss layer 88a may have a thickness of several tens of microns or less. At about 3 GHz, the electromagnetic wave absorption characteristics in the lattice magnetic loss layer 88a are between 9 decibels and 12 decibels in the entire area of the display surface compared to the case of a glass plate such as the conventional PDP 80 'of FIG. Has an absorption effect.
    [209] The method of manufacturing the lattice type magnetic loss layer 88a may be a sputtering process using a mask or a combination of a sputtering process and a patterning process. In addition, the lattice type magnetic loss layer 88a may be formed by a layer forming process except for the above-described sputtering process by, for example, a chemical vapor deposition (CVD) process or the like.
    [210] In the manner described above, the above-described manufacturing process of the lattice type magnetic loss layer 88a can be easily introduced into the overall manufacturing process of the PDP 80b.
    [211] 17 illustrates a plasma display panel (PDP) 80c according to a fourth embodiment of the present invention. The plasma display panel 80c has a lattice magnetic loss layer 88 formed on the front inner surface 81a of the front plate 81 instead of the front outer surface 81b of the front plate 81. It is similar to the structure and operation of the plasma display panel 80b shown in FIG. In this structure, the plasma display panel 80c has an advantage similar to that of the plasma display panel 80b shown in FIG.
    [212] 18, a plasma display panel (PDP) 80d according to a fifth embodiment of the present invention is described. It will be apparent below that the plasma display panel 80d is similar to the structure and operation of the plasma display panel 80b of FIG. 16 except that the magnetic loss layer shown in FIG. 16 is modified. Thus, the magnetic loss layer is shown at 88b.
    [213] The magnetic loss layer 88b is formed in a stripe shape. In other words, the magnetic loss layer 88b is a stripe magnetic loss layer. In this structure, the plasma display panel 80d has an advantage similar to that of the plasma display panel 80b of FIG.
    [214] 19, a plasma display panel (PDP) 80e according to a sixth embodiment of the present invention is described. The plasma display panel 80e has a stripe magnetic loss layer 88b formed on the front inner surface 81a of the front plate 81 instead of the front outer surface 81b of the front plate 81. It is similar to the structure and operation of the plasma display panel 80d shown in FIG. In this structure, the plasma display panel 80e has an advantage similar to that of the plasma display panel 80d shown in FIG.
    [215] 20 illustrates a plasma display panel (PDP) 80f according to a seventh embodiment of the present invention. It will be apparent below that the plasma display panel 80f is similar to the structure and operation of the plasma display panel 80 of FIG. 14 except that the magnetic loss layer shown in FIG. 14 is modified. Thus, the magnetic loss layer is shown at 88c.
    [216] The magnetic loss layer 88c is formed in a mottled pattern. In other words, the magnetic loss layer 88c is a speckled magnetic loss layer. The speckled magnetic loss layer 88c is preferably arranged such that the front electrode 83 and the back electrode 85 are interrelated with each other.
    [217] The speckled magnetic loss layer 88c is composed of a magnetic material similar to the magnetic material of the sheet-shaped magnetic loss layer 88 of FIG. The speckled magnetic loss layer 88c has excellent absorption characteristics of electromagnetic waves in the frequency band, especially between the MHz and GHz frequency bands, and can sufficiently suppress the electromagnetic waves in the aforementioned frequency band generated from the PDP 80f. In addition, since the magnetic loss layer 88c is a composition having an extremely large magnetic loss, the speckle-shaped magnetic loss layer 88c can be made very thin as compared with a conventional sheet wave absorber. Thus, the speckled magnetic loss layer 88c may have a thickness of several tens of microns or less. At about 3 GHz, the electromagnetic wave absorption characteristics in the speckled magnetic loss layer 88c range from 9 decibels to 12 decibels in the entire area of the display surface as compared to the glass plate such as the conventional PDP 80 'of FIG. Has an absorption effect of electromagnetic waves.
    [218] The method of manufacturing the speckled magnetic loss layer 88c may be a sputtering process using a mask or a combination of a sputtering process and a patterning process. The method of manufacturing the speckled magnetic loss layer 88c may be a vapor deposition process using a mask or a combination of a vapor deposition process and a patterning process. In addition, the method of manufacturing the speckled magnetic loss layer 88c may be a screen printing method using a mask. Further, the speckled magnetic loss layer 88c may be formed by a layer forming process except for the above-described sputtering process by, for example, chemical vapor deposition (CVD) process or the like.
    [219] In the manner described above, the manufacturing process of the speckled magnetic loss layer 88c described above can be easily introduced into the entire manufacturing process of the PDP 80f.
    [220] 21 illustrates a plasma display panel (PDP) 80g according to an eighth embodiment of the present invention. The plasma display panel 80g has the speckle-type magnetic loss layer 88c formed on the front inner surface 81a of the front plate 81 instead of the front outer surface 81b of the front plate 81. Is similar to the structure and operation of the plasma display panel 80f shown in FIG. In this structure, the plasma display panel 80g has similar advantages as the plasma display panel 80f shown in FIG.
    [221] 22 illustrates a conventional cathode ray tube (CRT) display device 90 'used as another of the display devices. In a conventionally known manner, the cathode ray tube display device 90 'is used, for example, as a television (TV) image of a television set, a monitor for a personal computer, or the like. Originally, cathode ray tubes (CRTs) are known as Braun tubes or electron tubes. The CRT display device 90 'is composed of a cathode ray tube 91 or a glass tube having an empty space and a deflection yoke 92 therein. The cathode ray tube 91 is a display panel 93 having an inner surface 93a and an outer surface 93b, a fluorescent material or phosphor 94 having a predetermined pattern formed on the inner surface 93a of the display panel 93. ), A shadow mask 95 facing the display panel 93 with fluorescent material 94 disposed therebetween, and an electron gun 96. The display panel 93 acts as a display window. The electron gun 96 passes through one of the hollow holes of the shadow mask 95 and strikes the position of the fluorescent material 94 to emit the position of the fluorescent material 94.
    [222] The CRT display device 90 'generates or radiates interfering electromagnetic waves when the electron beam EB strikes the position of the fluorescent material to diverge the position of the fluorescent material 94. As shown in another conventional CRT display device 90 "of FIG. 23, as a method of suppressing interfering electromagnetic waves in the conventional CRT display device 90 ', the conductive mesh 97' is formed of the cathode ray tube 91. Embedded in the display panel 93. However, the CRT display device 90 &quot; provided with the conductive mesh 97 'is undesirable in that the image quality of the CRT display device 90 " 97 ') interferes with the emission of fluorescent material 94 and conductive mesh 97' has low absorption efficiency for interfering electromagnetic waves if it has a low batch density to improve image quality. This provided CRT display device 90 &quot; is undesirable in that the manufacturing cost of the device is high and a conductive mesh 97 'in the display panel 93 must be embedded. In addition, the conductive mesh 97 'has a limited frequency band of MHz capable of absorbing electromagnetic waves. That is, the CRT display device 90 &quot; provided with the conductive mesh 97 'is undesirable in that the conductive mesh 97' cannot absorb electromagnetic waves in the frequency band of GHz which has recently been issued.
    [223] 24, 25 and 26, a cathode ray tube (CRT) display device 90 according to a first embodiment of the present invention is described. The CRT display device 90 is similar in structure and operation to the conventional CRT display device 90 ′ described in FIG. 22 except that the CRT display device 90 further includes a magnetic loss layer 97.
    [224] The magnetic loss layer 97 is formed on the inner surface 93a of the display panel 93. In the embodiment shown in Fig. 26, the magnetic loss layer 97 is formed in a lattice shape. In other words, the magnetic loss layer 97 is a lattice type magnetic loss layer. The lattice magnetic loss layer 97 may be appropriately selected depending on the size and shape of the CRT 91 and the intended purpose of the CRT display device.
    [225] The lattice magnetic loss layer 97 is composed of a magnetic material of a magnetic composition comprising M, X, and Y, M is a metal magnetic material consisting of Fe, Co, and / or Ni, and X is different from M and Y. Component or components, and Y is F, N, and / or O. In the embodiment described, the sheet-shaped magnetic loss layer 97 is the composition Fe 72 Al 11 O 17 layer illustrated by Example 1 above.
    [226] The sheet-shaped magnetic loss layer 97 having the above-described composition has excellent absorption characteristics of electromagnetic waves in the frequency band, especially between the frequency bands of MHz and GHz, and sufficiently absorbs electromagnetic waves in the aforementioned frequency band generated from the CRT display device 90. Can be suppressed.
    [227] In addition, since the lattice magnetic loss layer 97 is a composition having an extremely large magnetic loss, the lattice magnetic loss layer 97 can be made very thin as compared with a conventional sheet wave absorber. Thus, the lattice magnetic loss layer 97 may have a thickness of several tens of microns or less.
    [228] At about 3 GHz, the absorption characteristics of the electromagnetic waves of the lattice type magnetic loss layer 97 have the effect of absorbing electromagnetic waves up to about 10 decibels of the display as compared to the case of a glass tube such as the conventional CRT display device 90 'shown in FIG. Has
    [229] The method of manufacturing the lattice type magnetic loss layer 97 may be a sputtering process or a vapor deposition process using a mask. In particular, the method of manufacturing the lattice type magnetic loss layer 97 includes performing a sputtering process or a vapor deposition process using a metal mask and removing the metal mask to form a predetermined pattern. The method of making the grating magnetic loss layer 97 may be a combination of a sputtering process and a patterning process. In particular, the method of manufacturing the lattice type magnetic loss layer 97 includes performing a sputtering process or a vapor deposition process and performing lithography using a resist to form a predetermined pattern. Further, the lattice type magnetic loss layer 97 may be formed by a layer forming process except for the above-described sputtering process by, for example, chemical vapor deposition (CVD) process or the like.
    [230] In a manner readily understood from the foregoing, the manufacturing process of the above-described lattice magnetic loss layer 97 can be easily introduced into the entire manufacturing process of the CRT display device 90 in a manner similar to the manufacturing process of the fluorescent material 94. Can be.
    [231] 27 and 28, a cathode ray tube (CRT) display device 90a according to a second embodiment of the present invention is described. The CRT display device 90a is shown in FIG. 24 except that the lattice magnetic loss layer 97 is formed on the outer surface 93b of the display panel 93 instead of the inner surface 93a of the display panel 93. Similar to the structure and operation of the CRT display device 90 of FIGS. In this structure, the CRT display device 90a has similar advantages as the CRT display device 90 shown in Figs.
    [232] Further, at about 3 GHz, the absorption characteristics of the electromagnetic waves in the lattice type magnetic loss layer 97 are those of electromagnetic waves up to about 7 decibels compared to the case of a glass tube such as the conventional CRT display device 90 'shown in FIG. Has an absorption effect. In the case of the CRT display device 90 shown in FIGS. 24 to 26, the absorption effect of the electromagnetic wave is reduced to about 3 decibels because the fluorescent material 94 and the lattice type magnetic loss layer 97 are displayed on the CRT 91. This is because they are separated from each other by an interval corresponding to the thickness of the panel 93.
    [233] In a manner easily understood from the foregoing, the manufacturing process of the above-described lattice magnetic loss layer 97 can be easily introduced into the entire manufacturing process of the CRT display device 90a.
    [234] 29, a cathode ray tube (CRT) display device 90b according to a third embodiment of the present invention is described. It will be apparent below that the CRT display device 90b is similar in structure and operation to the CRT display device 90 of FIG. 26 except that the magnetic loss layer shown in FIG. 26 is modified. Thus, the magnetic loss layer is shown at 97a.
    [235] The magnetic loss layer 97a is formed in a stripe shape. In other words, the magnetic loss layer 97a is a stripe magnetic loss layer. In this structure, the CRT display device 90 has similar advantages as the CRT display device 90b of FIG.
    [236] 30, a cathode ray tube (CRT) display device 90c according to a fourth embodiment of the present invention is described. The CRT display device 90c is illustrated in FIG. 29 except that the stripe magnetic loss layer 97a is formed on the outer surface 93b of the display panel 93 instead of the inner surface 93a of the display panel 93. The structure and operation of the CRT display device 90b shown in FIG. In this structure, the CRT display device 90c has similar advantages as the CRT display device 90a shown in FIG.
    [237] 31, a cathode ray tube (CRT) display device 90d according to a fifth embodiment of the present invention is described. It will be apparent below that the CRT display device 90d is similar to the structure and operation of the CRT display device 90 of FIG. 26 except that the magnetic loss layer shown in FIG. 26 is modified. Thus, the magnetic loss layer is shown at 97b.
    [238] The magnetic loss layer 97b is formed in a mottled pattern. In other words, the magnetic loss layer 97b is a speckled magnetic loss layer. The speckled magnetic loss layer 97b may be appropriately selected depending on the size and shape of the CRT 91 and the intended purpose of the CRT display device.
    [239] The speckled magnetic loss layer 97b is made of a magnetic material similar to that of the lattice magnetic loss layer 97 of FIG. The speckled magnetic loss layer 97b has excellent absorption characteristics of electromagnetic waves in the frequency band, especially between the MHz and GHz frequency bands, and can sufficiently suppress the electromagnetic waves in the aforementioned frequency band generated from the CRT display device 90d. In addition, since the speckled magnetic loss layer 97b is a composition having an extremely large magnetic loss, the speckled magnetic loss layer 97b can be made very thin as compared with a conventional sheet wave absorber. Thus, the speckled magnetic loss layer 97b may have a thickness of several tens of microns or less. At about 3 GHz, the electromagnetic wave absorption characteristics in the speckled magnetic loss layer 97b have an absorption effect of electromagnetic waves up to about 10 decibels compared to the case of a glass tube such as the conventional CRT display device 90 'of FIG.
    [240] The method of manufacturing the speckled magnetic loss layer 97b may be a sputtering process or a vapor deposition process using a metal mask. In particular, the method of manufacturing the speckled magnetic loss layer 97b includes performing a sputtering process or a vapor deposition process using a metal mask and removing the metal mask to form a predetermined pattern. In addition, the method of manufacturing the speckled magnetic loss layer 97b may be a combination of a sputtering process and a patterning process. In particular, the method of manufacturing the speckled magnetic loss layer 97b includes performing a sputtering process or a vapor deposition process and performing lithography using a resist to form a predetermined pattern. In addition, the speckle-type magnetic loss layer 97b may be formed by a layer forming process except for the above-described sputtering process by, for example, chemical vapor deposition (CVD) process or the like.
    [241] In a manner easily understood from the foregoing, the manufacturing process of the speckled magnetic loss layer 97b described above is easily introduced into the entire manufacturing process of the CRT display device 90d in a manner similar to the manufacturing process of the fluorescent material 94. can do.
    [242] 32, a cathode ray tube (CRT) display device 90e according to a sixth embodiment of the present invention is described. The CRT display device 90e is a figure except that a speckled magnetic loss layer 97b is formed on the outer surface 93b of the display panel 93 instead of the inner surface 93a of the display panel 93. Similar to the structure and operation of the CRT display device 90d shown at 31. In this structure, the CRT display device 90e has similar advantages as the CRT display device 90c shown in FIG.
    [243] 33, a cathode ray tube (CRT) display device 90f according to a seventh embodiment of the present invention is described. It will be apparent below that the CRT display device 90f is similar in structure and operation to the CRT display device 90a shown in FIG. 28 except that the magnetic loss layer is modified from FIG. Thus, the magnetic loss layer is shown at 97c.
    [244] The magnetic loss layer 97c is formed in a mat shape. In other words, the magnetic loss layer 97c is a sheet-shaped magnetic loss layer. The sheet-shaped magnetic loss layer 97c may be appropriately selected depending on the size and shape of the CRT 91 and the intended purpose of the CRT display device.
    [245] The method of manufacturing the sheet-shaped magnetic loss layer 97c may be a sputtering process or a vapor deposition process. In addition, the sheet-shaped magnetic loss layer 97c may be formed by a layer forming process except for the above-mentioned sputtering process by, for example, a chemical vapor deposition (CVD) process or the like.
    [246] In a manner easily understood from the foregoing, the manufacturing process of the sheet-shaped magnetic loss layer 97c described above can be easily introduced into any step in the overall manufacturing process of the CRT display device 90f.
    [247] In this structure, the CRT display device 90f has similar advantages as the CRT display device 90a shown in FIG.
    [248] Thus, while the invention has been described in conjunction with the preferred embodiments, those skilled in the art will readily be able to practice the invention in a variety of ways. For example, the display apparatus to which the present invention can be applied is not limited to the display device of the above-described embodiment.
    [249] The present invention has the effect of suppressing high frequency noise through the display device.
    权利要求:
    Claims (58)
    [1" claim-type="Currently amended] A display device 70, 70a; 80-80g; 90-90g, comprising a display window 73, 81, 93 having a major surface,
    Display device characterized in that the magnetic loss layer (75, 75a; 88-88c; 97-97g) is formed on at least part of the major surface.
    [2" claim-type="Currently amended] The method of claim 1,
    The magnetic loss layer is a grain magnetic thin film layer having a magnetic composition composed of M, X, and Y, M is a metallic magnetic material composed of Fe, Co, and / or Ni, and X is a component or components different from M and Y. And Y is F, N, and / or O. 2.
    [3" claim-type="Currently amended] The method of claim 2,
    And said grain magnetic thin film layer is deposited on said major surface by a sputtering process.
    [4" claim-type="Currently amended] The method of claim 2,
    And said grain magnetic thin film layer is deposited on said major surface by a vapor deposition process.
    [5" claim-type="Currently amended] The method of claim 1,
    The display device is a display device characterized in that the light emitting element (70, 70a) having a light emitting window (73) as the display window and composed of magnetic loss layers (75, 75a) formed on at least part of the main surface. .
    [6" claim-type="Currently amended] The method of claim 5,
    The magnetic loss layer is a grain magnetic thin film layer having a magnetic composition composed of M, X, and Y, M is a metallic magnetic material composed of Fe, Co, and / or Ni, and X is a component or components different from M and Y. And Y is F, N, and / or O. 2.
    [7" claim-type="Currently amended] The method of claim 6,
    And said grain magnetic thin film layer (75a) is deposited on said main surface by a sputtering process.
    [8" claim-type="Currently amended] The method of claim 6,
    And the grain magnetic thin film layer (75a) is deposited on the main surface by a vapor deposition process.
    [9" claim-type="Currently amended]
    The method of claim 1,
    The display apparatus includes a light emitting element 70 having a light emitting window 73 as the display window and composed of a mesh type magnetic loss layer 75 formed on at least part of the main surface. .
    [10" claim-type="Currently amended] The method of claim 9,
    The mesh type magnetic loss layer is a grain magnetic thin film layer having a magnetic composition composed of M, X, and Y, M is a metallic magnetic material composed of Fe, Co, and / or Ni, and X is a component different from M and Y, or Components, and Y is F, N, and / or O. 2.
    [11" claim-type="Currently amended] The method of claim 10,
    And the grain magnetic thin film layer is deposited on the main surface by a sputtering process using a mask.
    [12" claim-type="Currently amended] The method of claim 10,
    And the grain magnetic thin film layer is deposited on the main surface by a vapor deposition process using a mask.
    [13" claim-type="Currently amended] The method of claim 10,

    And the grain magnetic thin film layer is a cross hatching film formed by cross hatching a magnetic loss wiring made of grain magnetic material.
    [14" claim-type="Currently amended] The method of claim 1,
    The display device includes a plasma display panel 80 having a front glass plate 81 as the display window and an outer surface 81b as the major surface, and composed of magnetic loss layers 88-88c formed on the outer surface. 80b, 80d, 80f).
    [15" claim-type="Currently amended] The method of claim 14,
    The magnetic loss layer is a grain magnetic thin film layer having a magnetic composition composed of M, X, and Y, M is a metallic magnetic material composed of Fe, Co, and / or Ni, and X is a component or components different from M and Y. And Y is F, N, and / or O. 2.
    [16" claim-type="Currently amended] The method of claim 15,
    And the magnetic loss layer is formed in the form of a mat (88).
    [17" claim-type="Currently amended] The method of claim 16,

    And the magnetic loss layer is deposited on the outer surface by a sputtering process.
    [18" claim-type="Currently amended] The method of claim 16,
    And the magnetic loss layer is deposited on the outer surface by a vapor deposition process.
    [19" claim-type="Currently amended] The method of claim 15,
    And the magnetic loss layer is formed in a lattice form (88a).
    [20" claim-type="Currently amended] The method of claim 15,
    And the magnetic loss layer is formed in the form of stripes (88b).
    [21" claim-type="Currently amended] The method of claim 16,
    And the magnetic loss layer has a speckle pattern (88c).
    [22" claim-type="Currently amended] The method according to any one of claims 19 to 21,

    And the magnetic loss layer is deposited on the outer surface by a sputtering process using a mask.
    [23" claim-type="Currently amended] The method according to any one of claims 19 to 21,
    And the magnetic loss layer is deposited on the outer surface by a vapor deposition process using a mask.
    [24" claim-type="Currently amended] The method according to any one of claims 19 to 21,
    And said magnetic loss layer is deposited on said outer surface by a combination of a sputtering process and a patterning process.
    [25" claim-type="Currently amended] The method according to any one of claims 19 to 21,
    And the magnetic loss layer is deposited on the outer surface by a combination of a vapor deposition process and a patterning process.
    [26" claim-type="Currently amended] The method of claim 1,
    The display apparatus has a front glass plate 81 as the display window, an inner surface 81a as the major surface, and a plasma display panel 80a including a magnetic loss layer 88-88c formed on the inner surface. , 80c, 80e, 80g).
    [27" claim-type="Currently amended] The method of claim 26,
    The magnetic loss layer is a grain magnetic thin film layer having a magnetic composition composed of M, X, and Y, M is a metallic magnetic material composed of Fe, Co, and / or Ni, and X is a component or components different from M and Y. And Y is F, N, and / or O. 2.
    [28" claim-type="Currently amended] The method of claim 27,
    And the magnetic loss layer is in the form of a mat (88).
    [29" claim-type="Currently amended] The method of claim 28,
    And the magnetic loss layer is deposited on the inner surface by a sputtering process.
    [30" claim-type="Currently amended] The method of claim 28,
    And the magnetic loss layer is deposited on the inner surface by a vapor deposition process.
    [31" claim-type="Currently amended] The method of claim 27,

    And the magnetic loss layer is in the form of a lattice (88a).
    [32" claim-type="Currently amended] The method of claim 27,
    And the magnetic loss layer is in the form of stripes (88b).
    [33" claim-type="Currently amended] The method of claim 27,
    And the magnetic loss layer is in the shape of a speckle (88c).
    [34" claim-type="Currently amended] The method according to any one of claims 31 to 33,
    And the magnetic loss layer is deposited on the inner surface by a sputtering process using a mask.
    [35" claim-type="Currently amended] The method according to any one of claims 31 to 33,
    And the magnetic loss layer is deposited on the inner surface by a vapor deposition process using a mask.
    [36" claim-type="Currently amended] The method according to any one of claims 31 to 33,

    And the magnetic loss layer is deposited on the inner surface by a combination of a sputtering process and a patterning process.
    [37" claim-type="Currently amended] The method according to any one of claims 31 to 33,
    And the lattice type magnetic loss layer is deposited on the inner surface by a combination of a vapor deposition process and a patterning process.
    [38" claim-type="Currently amended] The method of claim 1,
    The display device has a cathode ray tube 91 having a display panel as the display window and an inner surface 93a as the main surface, and composed of a magnetic loss layer 97-97b formed on the inner surface. (CRT) Display device (90, 90b, 90d).
    [39" claim-type="Currently amended] The method of claim 38,
    The magnetic loss layer is a grain magnetic thin film layer having a magnetic composition composed of M, X, and Y, M is a metallic magnetic material composed of Fe, Co, and / or Ni, and X is a component or components different from M and Y. And Y is F, N, and / or O. 2.
    [40" claim-type="Currently amended] The method of claim 39,

    And the magnetic loss layer is formed in the form of a lattice (97).
    [41" claim-type="Currently amended] The method of claim 39,
    And the magnetic loss layer is formed in the form of stripes (97a).
    [42" claim-type="Currently amended] The method of claim 39,
    And the magnetic loss layer is formed in a speckle pattern (97b).
    [43" claim-type="Currently amended] The method according to any one of claims 40 to 42,
    And the magnetic loss layer is deposited on the inner surface by a sputtering process using a mask.
    [44" claim-type="Currently amended] The method according to any one of claims 40 to 42,
    And the magnetic loss layer is deposited on the inner surface by a vapor deposition process using a mask.
    [45" claim-type="Currently amended] The method according to any one of claims 40 to 42,

    And the magnetic loss layer is deposited on the inner surface by a combination of a sputtering process and a patterning process.
    [46" claim-type="Currently amended] The method according to any one of claims 40 to 42,
    And the magnetic loss layer is deposited on the inner surface by a combination of a vapor deposition process and a patterning process.
    [47" claim-type="Currently amended] The method of claim 1,
    The display device has a cathode ray tube 91 having a display panel as the display window and an outer surface 93b as the main surface, and composed of a magnetic loss layer 97-97c formed on the outer surface. (CRT) Display apparatuses characterized in that they are 90a, 90c, 90e, 90f.
    [48" claim-type="Currently amended] The method of claim 47,
    The magnetic loss layer is a grain magnetic thin film layer having a magnetic composition composed of M, X, and Y, M is a metallic magnetic material composed of Fe, Co, and / or Ni, and X is a component or components different from M and Y. And Y is F, N, and / or O. 2.
    [49" claim-type="Currently amended] The method of claim 48,

    And the magnetic loss layer is formed in the form of a lattice (97).
    [50" claim-type="Currently amended] The method of claim 48,
    And the magnetic loss layer is formed in the form of stripes (97a).
    [51" claim-type="Currently amended] The method of claim 48,
    And the magnetic loss layer is formed in a speckle pattern (97b).
    [52" claim-type="Currently amended] The method of any one of claims 49-51,
    And the magnetic loss layer is deposited on the outer surface by a sputtering process using a mask.
    [53" claim-type="Currently amended] The method of any one of claims 49-51,
    And the magnetic loss layer is deposited on the outer surface by a vapor deposition process using a mask.
    [54" claim-type="Currently amended] The method of any one of claims 49-51,

    And the magnetic loss layer is deposited on the inner surface by a combination of a sputtering process and a patterning process.
    [55" claim-type="Currently amended] The method of any one of claims 49-51,
    And the magnetic loss layer is deposited on the inner surface by a combination of a vapor deposition process and a patterning process.
    [56" claim-type="Currently amended] The method of claim 48,
    And the magnetic loss layer is formed in a mat shape (97c).
    [57" claim-type="Currently amended] The method of claim 56, wherein
    And the magnetic loss layer is deposited on the outer surface by a sputtering process.
    [58" claim-type="Currently amended] The method of claim 56, wherein
    And the magnetic loss layer is deposited on the outer surface by a vapor deposition process.
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    同族专利:
    公开号 | 公开日
    US20040150342A1|2004-08-05|
    US6703778B2|2004-03-09|
    SG106053A1|2004-09-30|
    NO20011710L|2001-10-05|
    EP1143480A1|2001-10-10|
    NO20011710D0|2001-04-04|
    CN1324090A|2001-11-28|
    US20010035705A1|2001-11-01|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2000-04-04|Priority to JP2000-102149
    2000-04-04|Priority to JP2000102149A
    2000-06-14|Priority to JP2000-178013
    2000-06-14|Priority to JP2000178013A
    2000-08-08|Priority to JP2000-239462
    2000-08-08|Priority to JP2000239462A
    2001-04-04|Application filed by 도낀 가부시끼가이샤
    2001-11-03|Publication of KR20010095324A
    优先权:
    申请号 | 申请日 | 专利标题
    JP2000-102149|2000-04-04|
    JP2000102149A|JP2001284698A|2000-04-04|2000-04-04|Light emitting element|
    JP2000-178013|2000-06-14|
    JP2000178013A|JP2001356698A|2000-06-14|2000-06-14|Plasma display panel|
    JP2000239462A|JP2002056790A|2000-08-08|2000-08-08|Cathode-ray tube display equipment|
    JP2000-239462|2000-08-08|
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