• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: A deep ultra violet lithography facilities having a gas flow controller is provided to prevent waste of time and manpower by automatically changing N2O2 gas. CONSTITUTION: A deep ultra violet lithography facilities having a gas flow controller comprises: a first gas supplier for supplying a first gas; a second gas supplier for supplying a second gas; an exposure unit for performing a photo process; and a gas flow controller for controlling gas flow of the gas supplied from the first and second gas suppliers and supplying the controlled gas to the exposure unit. The controlled gas is mixed gas.
    公开号:KR20000027909A
    申请号:KR1019980045954
    申请日:1998-10-29
    公开日:2000-05-15
    发明作者:이석우
    申请人:윤종용；삼성전자 주식회사；
    IPC主号:
    专利说明:

    DEEP ULTRA VIOLET LITHOGRAPHY EQUIPMENT HAVING MAS FLOW CONTROL
    TECHNICAL FIELD The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a deep ultra violet (lithography) lithography facility used in an exposure process.
    Among the equipment used in the exposure process equipment, deep UV lithography equipment is brought to the stable use of the N 2 O 2 gas to stabilize the refractive index of the lens (lens) and to prevent contamination.
    However, in general, when the N 2 O 2 gas is used, the N 2 O 2 gas must be purchased and periodically supplied, and after the N 2 O 2 gas is used up, a working time and a working person must be put in for gas exchange. There is a problem.
    The present invention has been proposed to solve the above-mentioned problems, and an object thereof is to provide a deep UV lithography facility that can automatically supply and replace N 2 O 2 gas or prevent waste of time and manpower.
    1 and 2 show deep UV lithography facilities equipped with a gas flow regulator in accordance with an embodiment of the present invention.
    * Explanation of symbols for the main parts of the drawings
    10, 30: N 2 gas supply 12, 32: O 2 gas supply
    14, 34: MFC 16, 36: MFC control unit
    18, 20, 22: deep UV stepper 38: exposed part
    (Configuration)
    According to the present invention for achieving the above object, a deep UV lithography equipment for performing a photolithography process in a semiconductor manufacturing process, the first gas supply for supplying a first gas; A second gas supply part for supplying a second gas; An exposure unit on which the photo process is performed; And controlling the flow rates of the gases supplied from the first and second gas supplies to supply the exposed portions, and including a flow rate regulator for supplying a mixed gas.
    (Action)
    Referring to FIG. 1, a novel deep UV lithography apparatus according to an embodiment of the present invention includes a first gas supply part for supplying a first gas, a second gas supply part for supplying a second gas, and a photo process. An exposure unit and a flow rate regulator for controlling the flow rate of the gas supplied from the first and second gas supply unit supplied to the exposure unit. At this time, the flow regulator supplies a mixed gas. With such a deep UV lithography facility, a N 2 O 2 gas can be automatically supplied by installing a gas flow regulator in the deep UV lithography facility and supplying the mixed gases to the exposure unit through the flow regulator, and supply the mixed gas. There is no need to buy from a gas supplier for this, and you can avoid wasting time and manpower for replacement.
    (Example)
    Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 and 2.
    1 and 2 respectively show deep UV lithography facilities equipped with a gas flow regulator in accordance with an embodiment of the present invention.
    Referring to FIG. 1, a deep UV lithography apparatus equipped with a gas flow controller according to the present invention includes an N 2 gas supply unit 10, an O 2 gas supply unit 12, and a gas flow controller (MFC). (14), MFC control unit 16, and deep UV steppers 18, 20, and 22.
    The N 2 gas supply unit 10 and the O 2 gas supply unit 12 are connected to the MFC 14 for controlling the flow rate of the N 2 and O 2 gas, the MGC 14 is the control unit ( 16 is supplied to the deep UV steppers 18, 20, and 22 in which a deep UV process is performed by adjusting the flow rates of the N 2 and O 2 gases supplied to the MFC 14 by the control of 16).
    Conventionally, various problems have been caused by purchasing and supplying a mixed gas from a gas supplier to supply a mixed gas in a facility for a photo process. However, in the present invention, two kinds of gas supplied from each gas supply part, that is, the N 2 gas supply part 10 and the O 2 gas supply part 12 are mixed through the MFC 14 and supplied to the photoprocessing equipment. It can be used in the same way as the mixed gas introduced by the supplier.
    The N 2 and O 2 gases coming out of the MFC 14 are supplied to a facility to be mixed and supplied at a ratio of 80:20.
    In FIG. 2, another deep UV lithography apparatus equipped with a gas flow regulator according to the present invention includes an N 2 gas supply unit 30, an O 2 gas supply unit 32, an MFC 34, an MFC control unit 36, And an exposure section 38.
    The gas supplied from the N 2 gas supply part 30 and the O 2 gas supply part 32 is mixed with the exposure part 38 by controlling the amount of gas by the control of the MFC control part 36. Supply gas.
    The present invention is capable of automatically supplying N 2 O 2 gas by installing a gas flow regulator in a deep UV lithography facility and supplying the mixed gases to the exposure unit through the flow regulator, and supplying the mixed gas from a gas supplier for supplying the mixed gas. There is no need to purchase, and the effect is to prevent waste of time and manpower for replacement.
    权利要求:
    Claims (4)
    [1" claim-type="Currently amended] In the deep UV lithography equipment for the photolithography process in the semiconductor manufacturing process,
    A first gas supply part for supplying a first gas;
    A second gas supply part for supplying a second gas;
    An exposure unit on which the photo process is performed;
    A deep UV lithography facility, comprising: a flow regulator for controlling a flow rate of gases supplied from the first and second gas supplies and supplying the exposed portion to a mixed gas.
    [2" claim-type="Currently amended] The method of claim 1,
    And a control unit for controlling the amount of gas supplied from the flow regulator.
    [3" claim-type="Currently amended] The method of claim 1,
    Wherein said first gas is an N 2 gas and said second gas is an O 2 gas.
    [4" claim-type="Currently amended] The method of claim 1,
    Deep UV lithography facility, characterized in that the mixing ratio of the N 2 and O 2 gas is 80:20.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-10-29|Application filed by 윤종용, 삼성전자 주식회사
    1998-10-29|Priority to KR1019980045954A
    2000-05-15|Publication of KR20000027909A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019980045954A|KR20000027909A|1998-10-29|1998-10-29|Deep ultraviolet lithography facilities having a gas flow controller|
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