• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: A method for forming a silicon titanium film is provided to reduce a contact resistance between a wafer and a metal wire and simplify manufacturing process by directly forming the silicon titanium film on the wafer. CONSTITUTION: A titanium target(22) is located in cathode of a sputter apparatus, and argon gases are injected into a chamber(23) of the sputter. Then, generated plasma ions are impacted into the titanium target(22). SiH4 gases are injected into the chamber(23), then the SiH4 gases divided to silicon(Si) and hydrogen molecular(2H2). By coupling the emitted titanium atoms and the divided silicon molecular, a silicon titanium film is directly formed on a wafer(21).
    公开号:KR20000027881A
    申请号:KR1019980045925
    申请日:1998-10-29
    公开日:2000-05-15
    发明作者:문호성
    申请人:김영환；현대반도체 주식회사；
    IPC主号:
    专利说明:

    Thin Film Formation Method of Semiconductor Device
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing process of a semiconductor device, and more particularly, to a method for forming a thin film of a semiconductor device suitable for lowering the contact resistance between a wafer (silicon) and a metal wiring.
    In general, when the accelerated ions are irradiated to the solid (target), the momentum of the ions is preserved and enters the solid. Inside a solid, it gradually loses energy by elastic or inelastic collision with atoms or molecules constituting the solid.
    As a result, the atoms constituting the crystal lattice repeat collisions, and finally atoms or molecules on the surface are released to the outside. This is called sputter evaporation. Sputter evaporation refers to the formation of a thin film by attaching a sputter-evaporated target material to a wafer.
    If such a sputtering method is classified according to the structure of the sputtering device, there is one that uses a cathode sputter in a glow discharge without distinguishing it from the ion beam sputtering method that separates the impact ion generating chamber and the sputtering chamber.
    Hereinafter, a thin film formation method of a conventional semiconductor device will be described with reference to the accompanying drawings.
    1 is a schematic diagram of a sputtering apparatus for forming a titanium film on a wafer of the prior art.
    First, as shown in FIG. 1, a titanium film (not shown) is deposited on the wafer 11 using a sputtering equipment.
    The sputtering method uses a titanium target 12 as a cathode, injects argon (Ar) gas into the chamber 13 to form a plasma, and the ions in the plasma form the titanium target 12. ) To deposit titanium atoms on the wafer 11 by emitting titanium atoms.
    2 is a schematic diagram of an annealing process equipment for lowering contact resistance between a wafer and a metal wiring in the prior art.
    As shown in FIG. 2, the wafer 11 is moved to the annealing process equipment 14 to reduce contact resistance between the wafer 11 on which the titanium film is deposited and the metal wiring formed thereafter, and the wafer 11. ), A silicon titanium film (not shown) is formed at the interface between the wafer 11 and the titanium film.
    The annealing process performs an annealing process on the wafer 11 for a time set to a required temperature by using a lamp 15 or a coil capable of generating a high temperature.
    However, the above-described problems in the method of forming a thin film of a semiconductor device of the related art as described above have been described.
    That is, since the contact resistance between the wafer (silicon) and the metal wiring is large, after depositing the titanium film on the wafer, a separate annealing process is added to lower the contact resistance between the metal wiring formed on the wafer and the wafer. The process is complicated by forming a silicon titanium film at the interface.
    An object of the present invention is to provide a method for forming a thin film of a semiconductor device to reduce the contact resistance between the wafer and the metal wiring, and to simplify the process of forming a silicon titanium film at the same time to solve the above problems.
    1 is a schematic diagram of a sputtering apparatus for forming a titanium film on a wafer of the prior art
    Figure 2 is a schematic diagram of the annealing process equipment for lowering the contact resistance between the wafer and the metal wiring in the prior art
    3 is a schematic diagram of a sputtering apparatus for forming a silicon titanium film on a wafer according to the present invention;
    4 is a view showing a heating method of a wafer for activating the separation of xylene gas in the present invention.
    Explanation of symbols for main parts of the drawings
    21: wafer 22: titanium target
    23: chamber 24: Kremf
    In the method of forming a thin film of a semiconductor device according to the present invention for achieving the above object, in the method of forming a thin film of a semiconductor device on a wafer using a sputtering device, a method of forming a titanium target on a cathode of the sputtering device Injecting argon gas into the chamber to form plasma ions to impinge ions in the plasma to bombard the target to release titanium atoms, and when the titanium atoms of the titanium target is released to inject the gas into the chamber Separating the xylene gas into silicon and hydrogen molecules, and forming a silicon titanium film on the wafer by combining the titanium atom emitted from the target and the silicon separated from the xylene gas. do.
    Hereinafter, a method of forming a thin film of a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.
    3 is a schematic diagram of a sputtering apparatus for forming a silicon titanium film on the wafer according to the present invention, Figure 4 is a view showing a heating method of the wafer to activate the separation of the silylene gas in the present invention.
    As shown in FIG. 3, a silicon titanium film (not shown) is directly formed on the wafer 21 using a sputtering equipment.
    That is, the silicon titanium film is formed by using the titanium target 22 as a cathode, and injecting argon (Ar) gas into the chamber 23 to form a plasma, and the ions in the plasma collide with the titanium target 22. Titanium atoms are released.
    In this case, when the gas (SiH 4 ) is injected into the chamber (23), the silicon gas is formed of silicon (Si) and hydrogen (2H 2 ) molecules at 300 ° C. or higher by the temperature in the plasma and the surface temperature of the wafer 21. Separated by.
    Titanium emitted from the titanium target 22 and silicon separated from the xylene gas are combined to form a silicon titanium (TiSi x ) film on the wafer 21.
    As shown in FIG. 4, since the sputtering process of FIG. 3 is heated by argon (Ar) gas having a high temperature (more than 300 ° C.) injected from the back side of the wafer 21, decomposition of the silylene gas is performed on the surface of the wafer 21. Increases in
    The cramp 24 described here serves to fix the wafer 11 in the sputtering equipment.
    As described above, the method of forming a thin film of a semiconductor device according to the present invention has the following effects.
    That is, by forming the silicon titanium film directly on the wafer, the contact resistance between the metal wiring and the wafer can be reduced without the need for a separate annealing process, and the manufacturing process can be simplified.
    权利要求:
    Claims (3)
    [1" claim-type="Currently amended] In the thin film forming method of a semiconductor device for forming a silicon titanium film on a wafer using a sputtering device,
    Placing a titanium target on the cathode of the sputtering equipment and injecting argon gas into the chamber to form plasma ions to emit titanium atoms by colliding with the target;
    Injecting a silylene gas into the chamber when the titanium atoms of the titanium target are released to separate the silylene gas into silicon and hydrogen molecules;
    And forming a silicon titanium film on the wafer by combining the titanium atoms emitted from the target and the silicon separated from the xylene gas.
    [2" claim-type="Currently amended] The method of claim 1, wherein the separating of the xylene gas into silicon and hydrogen molecules is performed at a temperature of 300 ° C. or higher by the temperature of the plasma in the chamber and the surface temperature of the wafer. .
    [3" claim-type="Currently amended] The method according to claim 1 and 2,
    A method of forming a thin film of a semiconductor device, characterized by injecting a high temperature argon gas into the back surface of a wafer to activate the separation of the silylene gas to form a silicon titanium film on the wafer.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-10-29|Application filed by 김영환, 현대반도체 주식회사
    1998-10-29|Priority to KR1019980045925A
    2000-05-15|Publication of KR20000027881A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019980045925A|KR20000027881A|1998-10-29|1998-10-29|Method for forming thin film of semiconductor devices|
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