• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser scattering apparatus for semiconductor inspection equipment for selectively changing the wavelength of laser light to improve detection power. The laser scattering apparatus of the semiconductor inspection equipment according to the present invention is a laser of the semiconductor inspection equipment for inspecting the wafer by irradiating the wafer with the laser light generated from the laser light source and detecting the reflected light reflected on the wafer with a detector. In the scattering apparatus, a wavelength filter is provided between the laser light source and the wafer so as to improve the detection power of the equipment by changing the wavelength of the laser light irradiated onto the wafer. The laser scattering apparatus of the semiconductor inspection equipment of the present invention is provided with a plurality of laser light sources for generating laser light of different wavelengths so as to improve the detection power of the equipment by irradiating the laser light of different wavelengths on the wafer. The features. Therefore, it has the effect of improving the wafer inspection performance of the equipment by optimizing the wavelength of the laser light according to the conditions of various film quality of the wafer.
    公开号:KR19990071140A
    申请号:KR1019980006406
    申请日:1998-02-27
    公开日:1999-09-15
    发明作者:현필식
    申请人:윤종용；삼성전자 주식회사；
    IPC主号:
    专利说明:

    Laser Scattering Device for Semiconductor Inspection Equipment
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser scattering apparatus for semiconductor inspection equipment, and more particularly, to a laser scattering apparatus for semiconductor inspection equipment for selectively changing the wavelength of laser light to improve detection power.
    In general, the semiconductor inspection equipment is one of the important equipments for determining the processing state of the wafer and at the same time to check whether the wafer is defective or not, and to determine the cause of the defect and apply it to the semiconductor production line.
    Such semiconductor inspection equipment is used not only to improve the yield of wafers in semiconductor production lines but also to study semiconductor processes in laboratories.
    In particular, a laser scattering apparatus using laser light for inspection of a wafer inspects the wafer by irradiating the wafer with laser light generated from a laser light source, and detecting the reflected light irradiated and reflected on the wafer with a detector.
    This is to create a wafer map so that the surface processing state of the wafer which cannot be visually recognized at a glance, and to accurately check the processing information of the local wafer according to the wafer map again with a microscope or the like.
    However, since the laser scattering apparatus of the conventional semiconductor inspection equipment inspects the wafer using only one wavelength mainly using argon (Ar), it is dependent on various film quality conditions (film thickness and reflectivity) of the wafer to be inspected. There was a problem that the wavelength of the laser light could not be optimized.
    The present invention is to solve the conventional problems as described above, the object of the laser scattering device of the semiconductor inspection equipment to improve the wafer inspection performance of the equipment by optimizing the wavelength of the laser light according to the conditions of the various film quality of the wafer In providing.
    1 is a schematic diagram showing a laser scattering apparatus of a semiconductor inspection apparatus according to a preferred embodiment of the present invention.
    Figure 2 is a schematic diagram showing a laser scattering apparatus of a semiconductor inspection equipment according to another embodiment of the present invention.
    ※ Explanation of codes for main parts of drawing
    1: wafer 10, 20, 30: laser light source
    12: wavelength filter 14, 24: detector
    22: reflector
    In order to achieve the above object, the laser scattering apparatus of the semiconductor inspection equipment of the present invention inspects the wafer by irradiating the wafer with the laser light generated from the laser light source and detecting the reflected light irradiated and reflected on the wafer with a detector. A laser scattering apparatus of a semiconductor inspection apparatus, comprising: a wavelength filter through which a laser beam penetrates between the laser light source and the wafer to improve the detection power of the apparatus by changing the wavelength of the laser light irradiated onto the wafer. It is characterized by installing.
    Further, it is preferable that the wavelength filter is provided with a wavelength filter moving means for moving the wavelength filter into or out of the irradiation area of the laser light so that the wavelength filter can selectively change the wavelength of the laser light.
    The wavelength filter may be a quarter wave stack filter.
    On the other hand, the laser scattering device of the semiconductor inspection equipment of the present invention is a semiconductor inspection equipment for inspecting the wafer by irradiating the wafer with laser light generated from the laser light source, and detecting the reflected light reflected on the wafer with a detector. In the laser scattering device, a plurality of laser light sources for generating laser light of different wavelengths are provided so as to improve the detection power of equipment by irradiating laser light of different wavelengths to the wafer.
    In addition, it is preferable to provide a reflector between the laser light source and the wafer so that the laser light generated from the plurality of laser light sources is primarily reflected and irradiated onto the wafer.
    In addition, it is preferable that the reflector is capable of adjusting the reflection angle or the position of the reflector such that laser light generated from the plurality of laser light sources is selectively irradiated onto the wafer.
    In addition, the plurality of laser light sources may be provided with laser light blocking means so that only the laser light generated from one laser light source is irradiated onto the wafer, and the laser light of the other laser light source is blocked.
    Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
    1 is a schematic diagram showing a laser scattering apparatus of a semiconductor inspection apparatus according to a preferred embodiment of the present invention.
    Figure 2 is a schematic diagram showing a laser scattering apparatus of a semiconductor inspection equipment according to another embodiment of the present invention.
    Referring first to FIG. 1, the laser scattering apparatus of the semiconductor inspection equipment of the present invention irradiates the wafer 1 with the laser light generated from the laser light source 10, and reflects the reflected light reflected on the wafer 1. A laser scattering device of a semiconductor inspection apparatus for inspecting the wafer 1 by detecting the detector 14 with a detector 14, wherein the laser light source is improved so as to improve the detection power of the apparatus by changing the wavelength of the laser light irradiated on the wafer 1. A wavelength filter 12 through which laser light penetrates is provided between the 10 and the wafer 1.
    Further, the wavelength filter is provided with a wavelength filter shifting means for moving the wavelength filter 12 into or out of the irradiation area of the laser light so that the wavelength filter 12 can selectively change the wavelength of the laser light. do.
    As the wavelength filter moving means, various moving devices are possible. For example, a filter shielding device for rotating the wavelength filter around a rotation axis formed perpendicular to the wavelength filter may be provided at the edge of the wavelength filter.
    The wavelength filter may be an optical filter of various forms, and a quarter wave stack filter in which layers of high and low refractive materials are alternately stacked at a quarter thickness of a wavelength may be used.
    Therefore, while the laser light generated by the laser light source 10 passes through the wavelength filter 12, the length of the wavelength (main oscillation wavelength is 488 nm or 515 nm) is selectively changed so that the wafer 1 By irradiating the wafer 1 with a more suitable wavelength depending on the film quality conditions, the detection power of the semiconductor inspection equipment can be improved.
    On the other hand, as shown in Fig. 2, the laser scattering apparatus of the semiconductor inspection equipment of the present invention irradiates the wafer 1 with the laser light generated by the laser light source 20, 30, and the wafer 1 A laser scattering device of a semiconductor inspection apparatus that inspects the wafer 1 by detecting the reflected light reflected by the detector 24. The laser scattering apparatus of a semiconductor wavelength inspection apparatus is irradiated to the wafer 1 to improve the detection power of the apparatus. Two laser light sources 20 and 30 for generating laser light of different wavelengths are installed at the irradiation position.
    In addition, the laser light sources 20 and 30 and the wafer 1 are provided with a reflector 22 for firstly reflecting the laser light generated from the two laser light sources 20 and 30 to irradiate the wafer 1. And the reflection plate 22 is capable of adjusting the reflection angle or the position of the reflection plate 22 so that the laser light generated from the two laser light sources 20 and 30 is selectively irradiated onto the wafer 1. It is preferable.
    In addition, the two laser light sources 20 and 30 are irradiated with only the laser light generated from one laser light source 20 to the wafer 1, and the laser light of other laser light sources 30 is blocked. Light blocking means are provided respectively.
    The laser light blocking means may be a laser blocking device for blocking the power of the laser light sources 20 and 30 or a blocking film for blocking the laser light directly at an inlet of the laser light sources 20 and 30. It is possible.
    Accordingly, laser light sources using various types of gases other than argon (Ar) (He, Ne, Kr, and Xe) may be installed to selectively irradiate the wafers to each other, thereby obtaining a more suitable wavelength according to the film quality conditions of the wafer. By irradiating the wafer, the detection power of the semiconductor inspection equipment can be improved.
    As described above, according to the laser scattering apparatus of the semiconductor inspection equipment according to the present invention, the wavelength of the laser light is optimized according to various film quality conditions of the wafer to have an effect of improving the wafer inspection performance of the equipment.
    Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.
    权利要求:
    Claims (7)
    [1" claim-type="Currently amended] In the laser scattering apparatus of the semiconductor inspection equipment for inspecting the wafer by irradiating the wafer with the laser light generated from the laser light source, and detecting the reflected light reflected on the wafer with a detector,
    A laser filter is provided between the laser light source and the wafer to provide a wavelength filter through which the laser light penetrates between the laser light source and the wafer to change the wavelength of the laser light irradiated onto the wafer. Catering device.
    [2" claim-type="Currently amended] The method of claim 1,
    Wherein the wavelength filter is provided with a wavelength filter moving means for moving the wavelength filter into or out of the irradiation area of the laser light so that the wavelength filter can selectively change the wavelength of the laser light. Laser scattering device for equipment.
    [3" claim-type="Currently amended] The method of claim 1,
    The wavelength filter,
    A laser scattering device of the semiconductor inspection equipment, characterized in that it is a quarter wave stack filter.
    [4" claim-type="Currently amended] In the laser scattering apparatus of the semiconductor inspection equipment which inspects the wafer by irradiating the wafer with the laser light generated from the laser light source and detecting the reflected light irradiated and reflected on the wafer with a detector,
    And a plurality of laser light sources for generating laser light of different wavelengths so as to improve the detection power of the device by irradiating laser light of different wavelengths to the wafer.
    [5" claim-type="Currently amended] The method of claim 4, wherein
    And a reflector provided between the laser light source and the wafer to first reflect the laser light generated from the plurality of laser light sources and irradiate the wafer.
    [6" claim-type="Currently amended] The method of claim 5,
    The reflector is,
    Laser scattering apparatus of the semiconductor inspection equipment, characterized in that the position of the reflection angle or the reflector is adjustable so that the laser light generated from the plurality of laser light sources is selectively irradiated on the wafer.
    [7" claim-type="Currently amended] The method of claim 4, wherein
    The plurality of laser light sources,
    The laser scattering device of the semiconductor inspection equipment, characterized in that the laser light blocking means is provided so that only the laser light generated from one laser light source is irradiated onto the wafer, and the laser light of the other laser light source is blocked.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-02-27|Application filed by 윤종용, 삼성전자 주식회사
    1998-02-27|Priority to KR1019980006406A
    1999-09-15|Publication of KR19990071140A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019980006406A|KR19990071140A|1998-02-27|1998-02-27|Laser Scattering Device for Semiconductor Inspection Equipment|
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