• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a hole-forming method using a sphere, forming an etched layer on the substrate, a positive photosensitive film is applied on the etched layer, and then a negative photosensitive film containing a transparent sphere on the positive photosensitive film After exposing the photoresist layers without an exposure mask, the transparent spheres are removed, the photoresist layers are developed to form a photoresist pattern stacked in a negative type and a positive type, and the etching layer is etched using the photoresist pattern as a mask. By removing the photoresist pattern to form a hole of submicron or less, there is an effect that can reduce the FED voltage of the FED.
    公开号:KR19990043899A
    申请号:KR1019970064946
    申请日:1997-11-29
    公开日:1999-06-15
    发明作者:김철하
    申请人:김영남；오리온전기 주식회사；
    IPC主号:
    专利说明:

    Hole formation method using sphere
    BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a hole forming method using spheres, and more particularly to a technique capable of producing holes of 1 μm or less by using spheres, particularly transparent spheres, in a hole forming process reaching a limit in a lithography process.
    The field emission device uses a phenomenon in which an electric field is concentrated at a sharp part of a tip, and applies a relatively low voltage, for example, a voltage of about 500 to 10 kV, to a high level of about 5 × 10 7 V / cm to a metal or a conductor. A display device that displays an image by causing an electric field to be applied, causing electrons to protrude out of a solid state through quantum mechanical tunneling, accelerated by a voltage applied to the opposite rear electrode, and striking a fluorescent layer formed on the electrode to emit an image. In addition, it has attracted attention as a next-generation display device because it has both the high definition of CRT and the light and thin type of liquid crystal display (hereinafter referred to as LCD).
    The FED is not only capable of manufacturing a thin and thin, but also solves the problems of process yield, manufacturing cost, and enlargement, which are crucial disadvantages of the LCD. That is, in case of LCD, even if one unit pixel is defective, the whole product is treated badly. However, FED has a smaller number of unit pixels in one pixel group, so even if one or two unit pixels are defective, There is no abnormality in the operation of the whole product is improved. In addition, FED has advantages such as simple structure, low power consumption, low unit cost, and suitable for portable display device.
    Initially, the FED is exposed to the outside by a cavity, and has a conical emitter (cathode) having a sharp portion, a gate arranged on both sides of the emitter, and an anode spaced apart from the gate. Each corresponding to a cathode, gate and anode of the CRT. In this case, the conical emitter emits electrons through a hole formed by the gate, that is, a gate hole.
    On the other hand, a method for realizing driving using low voltage includes a method of lowering the work function of the tip, a method of facilitating electron emission at the tip of the tip by sharpening the shape of the tip, and reducing the size of the gate hole to make it strong. There are ways to make the electric field possible, and the use of materials with low electron affinity.
    Here, as a method for reducing the diameter of the gate hole to submicron or less, a method using ion doping has emerged. In this case, assuming that the hole cycle is 0.5 μm and the hole diameter is 0.2 μm, the dose amount per unit area is 4 × 10 8 , which is very difficult to realize with current implantation equipment, and is a special equipment. There is a downside to using it.
    For reference, if the gate hole is reduced to a size of submicron or less, a strong electric field is formed at the emitter tip even at a low voltage, so that electrons are easily tunneled, and thus the driving voltage of the FED can be greatly reduced.
    However, in a photo-lithography process using an exposure mask, it is difficult to manufacture holes having a thickness of 1 μm or less.
    1, 2a and 2b is a relationship diagram showing a hole forming method according to the prior art,
    FIG. 1 illustrates an exposure mask having a light shielding pattern for forming a hole on the quartz substrate 40.
    2A and 2B are cross-sectional views illustrating a process of forming an etched layer of a hole pattern by using the exposure mask as a mask.
    First, an etching target layer 33 is formed on the substrate 31, and a photosensitive film 35 is coated on the upper portion of the substrate 31.
    Then, the photosensitive film 35 using the exposure mask of FIG. 1 is exposed and developed to form a photosensitive film 35 pattern. (FIG. 2A)
    Next, the etched layer 33 is etched using the photosensitive film 35 pattern as a mask to form the etched layer 33 pattern.
    Then, the photosensitive film 35 pattern is removed. (FIG. 2B)
    In the photolithography process using the exposure mask, the photoresist may be easily contaminated by the exposure mask, the life of the mask may be shortened, and it may be difficult to form a sub-micron hole required by the device.
    The present invention to solve the above problems of the prior art, by using a transparent sphere to easily form a hole having a sub-micron size to improve the productivity, characteristics and reliability and thereby high integration of the device The purpose is to provide a hole forming method using.
    1 is a plan view showing a mask used in the FED forming process according to the prior art.
    2A and 2B are cross-sectional views illustrating the formation of holes in the etched layer by a photolithography method using the mask of FIG.
    Figure 3 is a schematic diagram showing the principle of the hole forming method using a sphere according to the present invention.
    4 to 7 are graphs showing the characteristic change according to the refractive index of the photosensitive film or transparent sphere as a medium.
    8A to 8D are cross-sectional views illustrating a hole forming method using a sphere according to an embodiment of the present invention.
    <Description of Symbols for Major Parts of Drawings>
    11,31 substrate 13,33 etched layer
    15,35: positive photosensitive film 17: negative photosensitive film
    19: transparent sphere 21: exposure area
    23,37: contact hole 40: quartz substrate
    Hole formation method using a sphere according to the present invention to achieve the above object,
    Forming an etching target layer on the substrate;
    Applying a positive photosensitive film on the etched layer;
    Applying a negative photosensitive film containing transparent spheres on the positive photosensitive film;
    Exposing the photoresist films without an exposure mask;
    Removing the transparent sphere and developing the photosensitive films to form a photoresist pattern stacked in a negative type and a positive type;
    Etching the etched layer by using the photoresist pattern as a mask;
    And removing the photoresist pattern to form holes of submicron or less.
    The principle of the present invention for achieving the above object,
    A positive photoresist film and a negative photoresist film are stacked on the etched layer, the transparent photoresist is sprayed on the positive photoresist film, and then exposed and developed to form a sub-micron hole, thereby forming a Snell's law.
    Referring to the principle of the present invention using the Snell's law in more detail as follows.
    Calculation of the Refraction Angle in Transparent Confinement
    The path of light as it passes through the medium in vacuum is obtained from Snell's law. When the angle of incidence of light in the vacuum is θ and the refractive index of the medium is n, the refractive angle φ in the medium satisfies the Snell law as follows.
    sinθ / sinφ = n ----------------------------- (1)
    sinφ = sinθ / n ----------------------------- (2)
    Φ φ = sin -1 (sinθ / n) ----------------------------- (3)
    2. Calculation of the point 하는 where light passes through the bottom of the transparent sphere
    3 is a diagram showing a path of light propagation when parallel light is incident on a transparent sphere having a refractive index n and a refractive index n on a thin film coated with a photosensitive film having a refractive index m and a thickness d.
    Θ is the angle of incidence of light entering the transparent sphere in vacuum, and φ is the angle of refraction of the light refracted by the transparent sphere. And φ is the angle of refraction of light entering the PR from the transparent sphere. Is defined as a portion when light is refracted into the photosensitive film in the transparent sphere, and this portion is assumed to be a portion exposed by light in the upper portion of the photosensitive film.
    Here, from the trigonometric relations, x eventually becomes
    x = r sin (180-δ) ---------------------------------- (4)
    Where δ = 180-2φ + θ. Therefore, substituting Eq. (3) into Eq. (4) is as follows.
    x = r sin (2 × sin -1 (sinθ / n)-θ) ------------------ (5)
    Equation (5) describes the x displacement with respect to the incident angle θ of light incident on the transparent sphere.
    Refractive Rate θ = 30θ = 45θ = 90 1.5x0.460.59-0.33 2x0.921.18-0.66 1.7x0.220.21-0.92 2x0.440.42-1.84
    4 shows change characteristics of x with respect to an incident angle for refractive indexes of 1.5, 1.7, and 1.9 of transparent spheres having a radius of 3 μm, respectively. In this figure, as the refractive index increases, the maximum value of x shows a negative value for the incident angle (+), and │x│ increases rapidly. When n = 1.9, it turns out that x is very small at 0.1 micrometer or less when an incident angle is below a local maximum. In the case where the refractive index of the transparent sphere is 1.5, the maximum value of x is 0.6 µm with respect to the incident angle.
    This result shows that when using the transparent sphere with a large refractive index and limiting the incident angle to the maximum value or less, it is possible to secure a photoresist hole of 1 μm or less. In FIG. 4, a box is an area | region where an exposure area | region can be 1 micrometer or less. In other words, it is an area where a submicron hole pattern is possible.
    3. Calculation of the point R at which light passes through the surface of the substrate according to the angle of incidence
    First, the refractive index of the medium, that is, the photoresist film, is m under the transparent sphere, and the thickness of the medium is d, and t, z, and y are expressed as shown in FIG. At this time, the angle of refraction ψ relative to the incident angle φ formed when light is transmitted from the transparent sphere to the medium is determined by Snell's law.
    sinφ / sinθ = n / m ---------------------------- (6)
    Therefore, from the similarity of triangles, η and λ are given by
    η = 3π / 2-δ-ψ ---------------------------- (7)
    λ = δ + ψ-π ---------------------------- (8)
    Now we can find R from the tangent of η and λ.
    tanη = y / x ------------------------------------- (9)
    tanλ = R / z ------------------------------------- (10)
    x = y-t-d ------------------------------------- (11)
    Substituting Eq. (7) into Eq. (9) gives the following:
    y = x cot (δ + ψ) ------------------------------ (12)
    And t is given by
    t = r (1-cos (π-δ)
    = r (1 + cosδ) ------------------------- (13)
    From Formula (10), R is as follows.
    R = z tanλ ------------------------------------- (14)
    Substituting Eq. (11) into Eq. (14), substituting Eq. (12) and Eq. (13) for y and t, and substituting Eq. (4) into x are as follows.
    R = r [sinδcot (δ + ψ)-(1 + cosδ) -d / r tan (δ + ψ) ------- (15)
    In implantation, δ and ψ depend on the incident angle θ, so R is a function of the incident angle θ.
    Next, the R characteristic of the case where the refractive index of the transparent sphere is smaller and larger than the refractive index of the medium will be described.
    FIG. 5 is a graph showing R characteristics above the refractive index of the photoresist film PR having a refractive index of the transparent sphere as a medium. Here, it is assumed that the refractive index of the medium PR is 1.5, the thickness of the medium is 1 μm, the radius of the transparent sphere is 3 μm, and the refractive index of the transparent sphere is 1.5, 1.7, 1.9, respectively. In this result, R shows more stable characteristics as the refractive index of the transparent sphere and the refractive index of the medium are similar. As a result, R showed more stable characteristics as the refractive index of the transparent sphere and the refractive index of the medium were similar. In this figure, for n = 1.5, 1.7, 1.9, the submicron hole pattern can be formed when the incident angle θ of light is 75 °, 58 °, 38 ° or less. And when the angle of incidence is large, R becomes a negative value, which means that the light is greatly refracted and the light passes to the opposite side of the transparent sphere origin.
    6 is a graph showing the characteristics of the refractive index of the transparent sphere below the refractive index of the medium PR. Here, it is assumed that the refractive index of the medium PR is 1.9, the thickness of the medium is 1 μm, the radius of the transparent sphere is 3 μm, and the refractive indices of the transparent sphere are 1.5, 1.7, and 1.9, respectively. In this figure, for n = 1.5, 1.7, 1.9, the submicron hole pattern is possible when the incident angle θ of light is 80 °, 70 °, and 45 ° or less, respectively. As a result, R showed more stable characteristics as the refractive index of the transparent sphere and the refractive index of the medium were similar.
    From the above two results, it can be seen that the property of R is more stable as the refractive index of the medium is larger than the refractive index of the transparent sphere. However, when the incident angle is limited to 60 ° or less, it can be seen that R can also have a hole pattern of 0.5 μm or less.
    4. Calculation of the local maxima of x according to the incident angle
    First, from Snell's law, the small change of the angle of refraction according to the angle of incidence is as follows.
    cosφ (dφ / dθ) = cosθ / n ----------------------- (16)
    dφ / dθ = 1 / n · (cosθ / cosφ) --------------------- (17)
    X is given by
    x = r sin (2φ-θ) ------------------------------- (4)
    The small change of x according to the small change of the incident angle is as follows.
    dx / dθ = r {2cos (2φ-θ) · (dφ / dθ) -cos (2φ-θ)}
    = r cos (2φ-θ) {2 (dφ / dθ)-1} --------------- (18)
    = r cos (2φ-θ) {(2 / n) (cosθ / cosφ)-1}
    = 0
    In the end, the equation above has a maximum value when the following conditions are met.
    (2 / n) (cosθ / cosφ)-1 = 0 -------------------------- (19)
    Using Snell's law to solve the above equation,
    sinφ = sinψ / n ---------------------------------- (20)
    Then, using the square of Equation (20) and using a trigonometric function is as follows.
    sin 2 φ = 1-cos 2 φ = sin 2 θ / n 2 --------------------- (21)
    cos 2 φ = 1-(sin 2 θ / n 2 ) --------------------- (22)
    If we sum up Eq. (19), we get:
    (4 / n 2 ) · cos 2 θ = cos 2 φ ------------------------- (23)
    Substituting equation (22) into equation (23) gives:
    (4 / n 2 ) · cos 2 θ = 1-(sin 2 θ / n 2 ) ------------------- (24)
    Transplantation can be summarized as follows using trigonometric relations.
    (4 / n 2 ) · (1-sin 2 θ) = 1-(sin 2 θ / n 2 ) ------------- (25)
    sin 2 θ = 1/3 {4-n 2 } ----------------------------- (26)
    sinθ = ± √ {1/3 · (4-n 2 )} ----------------------- (27)
    Therefore, the local maxima of x is when the incident angle θ is
    θ = sin -1 ± √ {1/3 · (4-n 2 )} ------------------- (28)
    Therefore, substituting Eq. (27) and Eq. (28) into Eq. (5) gives the maximum value x as follows.
    x max = rsin [2sin -1 {± √ {1/3 · (4 / n 2-1 )}}
    -sin -1 {± √ {1/3 · (4-n 2 )}}] ------- (29)
    It can be seen that the maximum of x in the implantation is determined only by the refractive index.
    7 is a graph showing the change characteristic of the maximum value x max according to the change of the refractive index.
    In this figure, x max decreases rapidly as the refractive index increases, and the refractive index becomes 1.6 μm or less at 1.6 or more. It can be seen that the refractive index of the transparent sphere is easy from 1.6 to 2 to implement the submicron. In this case, it should be noted that the lower the refractive index, the easier it is to manufacture a submicron sized hole. In other words, as the refractive index of the transparent sphere increases, a negative x value is given at a small angle of incidence, resulting in a disadvantage that the diameter of the hole increases. And when the refractive index is 2 or more, the maximum value disappears. This indicates that as the incident angle θ increases above the maximal point, light passes through the opposite side of the transparent sphere negatively. Therefore, the transparent sphere having a refractive index of 2 or more can be seen that the hole pattern of the submicron is difficult.
    Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
    8A to 8D are cross-sectional views of a hole forming method using a sphere according to an embodiment of the present invention.
    First, an etching target layer 13 is formed on the substrate 11, and a positive photoresist layer 15 is formed on the etching target layer 13.
    The negative photosensitive film 17 containing the transparent sphere 19 is formed on the positive photosensitive film 15. At this time, the negative photosensitive film 17 is formed thinly on the transparent sphere 19.
    Next, the negative photosensitive film 17 is exposed without a mask. At this time, the light passing through the transparent sphere 19 is focused on the lower side of the transparent sphere 19 located on the positive photosensitive film 15 side, the positive photosensitive film 15 having an area smaller than the diameter of the transparent sphere 19 The exposed regions 18 are formed.
    Then, the transparent sphere 19 is removed to form a negative photosensitive film 17 pattern. (FIG. 8A, FIG. 8B)
    The photosensitive films 15 and 17 are developed to form a positive photosensitive film 15 pattern. At this time, the positive photosensitive film 15 pattern is formed smaller than the direct opening of the transparent sphere (19). (FIG. 8C)
    Next, the etched layer 13 is etched by using the photoresist patterns 15 and 17 as a mask, and the photoresist layers 15 and 17 patterns are removed. (FIG. 8D)
    On the other hand, when the present invention is applied to the FED, the size of the gate hole can be formed below the submicron, so that the driving voltage can be 50 V or less.
    In addition, when the present invention is applied to a manufacturing process of a semiconductor memory device, contact holes necessary for high integration of the semiconductor device can be formed to a size of submicron or less.
    As described above, the hole forming method using the sphere according to the present invention can form a hole having a submicron size or less by using a transparent sphere, thereby reducing the driving voltage to 50 V or less.
    权利要求:
    Claims (3)
    [1" claim-type="Currently amended] Forming an etching target layer on the substrate;
    Applying a positive photosensitive film on the etched layer;
    Applying a negative photosensitive film containing transparent spheres on the positive photosensitive film;
    Exposing the photoresist films without an exposure mask;
    Removing the transparent sphere and developing the photosensitive films to form a photoresist pattern stacked in a negative type and a positive type;
    Etching the etched layer by using the photoresist pattern as a mask;
    And removing the photoresist pattern to form holes of submicron or less.
    [2" claim-type="Currently amended] The method of claim 1,
    A hole forming method using a sphere, characterized in that the method for forming a hole according to the present invention is applied to the formation of a gate hole of an FED.
    [3" claim-type="Currently amended] The method of claim 1,
    A hole forming method using a sphere, wherein the hole forming method according to the present invention is applied to a contact hole forming method of a semiconductor memory device.
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    同族专利:
    公开号 | 公开日
    KR100288080B1|2001-10-24|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-11-29|Application filed by 김영남, 오리온전기 주식회사
    1997-11-29|Priority to KR1019970064946A
    1999-06-15|Publication of KR19990043899A
    2001-10-24|Application granted
    2001-10-24|Publication of KR100288080B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019970064946A|KR100288080B1|1997-11-29|1997-11-29|Method for forming holes using spheres|
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