• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    SUMMARY OF THE INVENTION An object of the present invention is to prevent a pattern defect of a pixel electrode and to improve an aperture ratio of a pixel by improving the bonding strength of an ITO pixel electrode formed on an organic film. For this purpose, the substrate of the liquid crystal display device of the present invention forms a TFT on the transparent substrate 110, and the organic film 155 including a bonding structure of a CH group or a CF group is coated on the TFT. A doping film 156 is formed by doping ions of Si, P, Ge, B, As, Ba, Ti, Tb, Bi, etc. on the surface of the organic film, and a pixel electrode 140 formed of an ITO film is formed on the doping film. The pixel electrode 140 is in contact with the drain electrode 170b of the TFT through the contact hole 130. The doped film may be oxidized by being added to O 2 . By forming a doped film or an oxide film on the surface of the organic film as described above, the bonding strength between the organic film and the ITO film is enhanced. Therefore, the pattern defect of the pixel electrode which this invention intends can be prevented, and the aperture ratio of a pixel can be improved.
    公开号:KR19990038475A
    申请号:KR1019970058219
    申请日:1997-11-05
    公开日:1999-06-05
    发明作者:김웅권
    申请人:구자홍；엘지전자 주식회사；
    IPC主号:
    专利说明:

    Manufacturing Method of Substrate of Liquid Crystal Display and Structure of Substrate of Liquid Crystal Display
    The present invention relates to a method for manufacturing a substrate and a structure of a liquid crystal display device including a TFT and a pixel electrode. In particular, a manufacturing method for strengthening the bonding strength between the two layers when an inorganic film including a pixel electrode is formed on an organic layer. And structure.
    In general, a substrate of a conventional liquid crystal display device having a switching element, a pixel electrode, and the like is formed through the process described with reference to FIGS. 1A and 2A.
    1A and 1B show an inverse staggered TFT structure as an example.
    In FIG. 1A, a gate electrode 60 is formed on a transparent substrate 10, and a gate insulating film 50 including the gate electrode 60 is formed.
    A semiconductor layer 90 is formed in an island shape on the gate insulating film of the gate electrode portion, and ohmic contact layers 92a and 92b are formed on both surfaces of the semiconductor layer.
    The ohmic contact layer 92a is formed such that the source electrode 70a is in contact with each other, and a data bus line 70 is formed on the gate insulating layer 50 that is connected to the source electrode.
    Meanwhile, the drain electrode 70b is in contact with the ohmic contact layer 92b.
    As described above, a gate electrode, a source electrode, a drain electrode, and the like are formed to form a TFT functioning as a switching element.
    An organic film 55 made of benzocyclobutene (BCB) or the like is formed on the substrate on which the TFT is formed. A contact hole 30 is formed in the organic film 55 so that the surface of the drain electrode 70b of the TFT is exposed.
    The reason why the organic film is used in the structure of the liquid crystal display device is that the surface of the organic film is kept flat when the organic film is applied by spin coating or the like on a stepped substrate, and in particular inorganic films such as SiNx and SiOx. This is because the relative dielectric constant is lower than that of the present invention.
    Therefore, the aperture ratio of the pixel can be maximized by overlapping the pixel electrode described later to the area of the data bus line portion.
    That is, an ITO (Indium Tin Oxide) inorganic film is deposited on the organic film on which the contact hole 30 is formed by a sputtering method, and when the ITO film is patterned to form the pixel electrode 40, the pixel electrode is formed to overlap the data bus line or the like. The aperture ratio of the pixel can be increased.
    The pixel electrode 40 may be formed by etching the ITO film by wet etching or the like according to a pattern of the photoresist 88 covering the pixel electrode.
    However, in the etching process, since the bonding strength between the organic film and the ITO inorganic film is weak, voids may be formed between the two layers and peeling of the ITO film may occur.
    Therefore, when all the etching portions of the ITO film are removed, an etchant penetrates along the edge of the etched ITO film, and a pattern defect occurs in which the pixel electrode 40 is overetched by the penetrated etchant.
    After the ITO film is etched, the photoresist is removed, that is, FIG. 1B illustrates the pattern defect state.
    FIG. 1B shows a state where the pixel electrode 40 is peeled off, and B and C show an overetched state.
    The present invention provides a structure and a manufacturing method for improving the bonding and bonding strength of an inorganic film in the structure of a substrate of an LCD including an inorganic film, that is, an inorganic film such as SiNx and SiOx, including an ITO film. There is a purpose.
    Another object of the present invention is to prevent a pattern defect of a pixel electrode formed of the ITO film by improving the bonding strength of the ITO film formed on the organic film.
    For this purpose, the present invention forms an ion doped layer 156 by doping Ge ions or the like on the surface of the organic layer 155 as shown in FIG. The organic film may be a BCB organic film including a bonding structure of a C-H group or a C-F group, and the doping ions may be Si, P, Ge, B, As, Ba, Ti, Tb, Bi or the like.
    As shown in FIG. 2B, when the inorganic film 180 including SiNx, SiOx, etc. including an ITO film is deposited on the ion-doped organic film, the bonding strength between the organic film and the inorganic film is further improved.
    In order to further improve the bonding strength between the organic layer and the inorganic layer, the surface of the doped layer 156 is etched into O 2 to form an oxide layer 185.
    That is, the oxide 185 is formed on the surface of the doped 156 as shown in FIGS. 3A and 3B by O 2 , and the inorganic layer 180 is deposited on the oxide 185.
    As described above, by doping ions or forming an oxide film on the organic film, the bonding strength with the inorganic film formed thereon is strengthened, and the etchant does not penetrate the edge of the patterned inorganic film when the inorganic film is patterned.
    1A and 1B are cross-sectional views illustrating a substrate of a conventional liquid crystal display device.
    2A, 2B, 3A, and 3B are cross-sectional views illustrating the gist of the present invention.
    4A to 4D, FIGS. 5A to 5C, and FIG. 6 are cross-sectional views for describing a substrate of the liquid crystal display device of the present invention.
    <Description of Symbols for Main Parts of Drawings>
    10, 110: transparent substrate 30, 130: contact hole
    40, 140: pixel electrodes 50, 150: gate insulating film
    55, 155: organic film 156: doped film
    60, 160: gate electrode 70, 170: data bus line
    70a, 170a: source electrode 70b, 170b: drain electrode
    180: inorganic film 185: oxide film
    88, 188: photoresist 90, 190: semiconductor layer
    The substrate of the liquid crystal display device of the present invention, which improves the conventional problems, includes a TFT formed on a transparent substrate, an organic film such as BCB covering the TFT and including a bonding structure of a CH group or a CF group, and the organic layer. A doping film formed by doping Si, P, Ge, B, As, Ba, Ti, Tb, Bi ions on the surface, and the organic film on the drain electrode of the TFT and a part of the doping film are removed And a contact hole formed to contact the drain electrode of the TFT through the contact hole and formed on the doped film.
    In addition, the doping film may be formed on the wall surface of the contact hole and the surface of the drain electrode of the TFT by changing the process order of forming the contact hole and the doping film.
    In addition, by bonding the surface of the doped film to O 2 to form an oxide film, the bonding strength with the ITO film can be further enhanced.
    The present invention is not limited to the substrate of the above structure, and includes an organic film including a bonding structure of a CH group or a CF group, and Si, P, Ge, B, As, Ba, Ti, Tb, Bi ions on the surface of the organic film. Any of the structures having a doped film formed by doping selected ions and an inorganic film formed on the ion doped film can be applied.
    In addition, a method for manufacturing a substrate of a liquid crystal display device according to the present invention comprises the steps of forming a TFT on a transparent substrate, forming an organic film such as BCB including a bonding structure of a CH group or a CF group on the TFT, and a surface of the organic layer. Doping ions selected from Si, P, Ge, B, As, Ba, Ti, Tb, and Bi ions, and removing a portion of the organic layer and the doped layer to expose the drain electrode of the TFT. Forming an inorganic film (ITO film) on the entire surface of the substrate on which the contact hole is formed, and forming a pixel electrode formed on the doped film by contacting the drain electrode of the TFT by patterning the ITO film. Include.
    In the manufacturing process of the substrate, a step of adding the doped film to O 2 before forming the contact hole may be added.
    Alternatively, the contact hole may be formed first, and then ions may be doped in the contact hole portion.
    The structure, manufacturing method and operation of the substrate of the liquid crystal display device of the present invention described above will be described in detail in the following embodiments.
    Example 1
    This embodiment will be described with reference to FIGS. 4A to 4D.
    As described in the related art, the gate electrode 160 and the gate insulating film 150 are formed on the transparent substrate 110, and the semiconductor layer 190 is formed in an island shape on the gate insulating film of the gate electrode part.
    On the surface of the semiconductor layer, ohmic contact layers 192a and 192b are formed separately from each other, and the ohmic contact layer 192a is formed so as to contact the source electrode 170a, and a data bus line 170 which is connected to the source electrode is formed on the gate insulating layer 150. do.
    Meanwhile, the drain electrode 170b is in contact with the ohmic contact layer 192b.
    A TFT is formed as described above, and is formed by spin coating an organic film 155 such as BCB having a C-H or C-F group on the substrate on which the TFT is formed.
    Subsequently, an ion doped film 156 is formed by doping ions selected from Ge, Si, P, B, As, Ba, Ti, Tb, and Bi ions onto the surface of the organic film 155 (FIG. 4A).
    Subsequently, after the photoresist 188 is applied onto the substrate on which the ion doped film 156 is formed, the photoresist 188 is developed according to a predetermined pattern to form a contact hole 130 exposing the surface of the drain electrode 170b of the TFT. Then, part of the ion doped film 156 and part of the organic film 155 are etched by dry etching or the like using the photoresist as a mask (FIG. 4B).
    Subsequently, the photoresist of FIG. 4B is removed, and an inorganic film, that is, an ITO film 140 is deposited on the entire surface of the substrate on which the contact hole 130 is formed by sputtering or the like, and the photoresist 188 is applied.
    After the photoresist 188 is developed in accordance with a predetermined pattern shape, the ITO film is etched by wet etching or the like according to the developed photoresist pattern (FIG. 4C).
    When the ion doped film 156 is formed on the organic film as described above, since the ion doped film 156 strengthens the bonding strength with the ITO film 140, the edges of the ITO film etched when the ITO film is etched, that is, A, B, C The etchant does not penetrate the part.
    Therefore, as shown in FIG. 4D, when the ITO film 140 formed on the doping film 156 is formed after removing the photoresist, that is, the pixel electrode is formed, no pattern defect occurs in which the pixel electrode is peeled off or overetched. Do not.
    Example 2
    This embodiment will be described with reference to FIGS. 5A-5C.
    This embodiment is manufactured in substantially the same manner as in Example 1, except that contact holes 130 are first formed in the organic layer 155 before Ge, Si, P, B, As, Ba, Ti, Tb, Bi ion doping. will be.
    As described above, the contact hole 130 is first formed, and then the doping film 156 is formed on the wall surface of the contact hole 130 by doping ions (FIG. 5A).
    Subsequently, an inorganic film, that is, an ITO film 140, is deposited on the entire surface of the substrate on which the ion doped film 156 is formed by a sputtering method or the like, and the photoresist 188 is illustrated.
    After the photoresist 188 is developed in accordance with a predetermined pattern shape, the ITO film is etched by wet etching or the like according to the developed photoresist pattern (FIG. 5B).
    When the photoresist is removed from the structure of FIG. 5B, the substrate of the liquid crystal display of the present embodiment as shown in FIG. 5C is completed, and the same effects as those of the first embodiment can be obtained.
    Example 3
    In this embodiment, as shown in FIG. 6, an ion doped film 156 is formed on the surface of the organic film 155, and the ion doped film is oxidized by O 2 etching. By forming the oxide film 185, the bonding strength of the ITO film 140 can be further enhanced.
    The fabrication process of the substrate of this embodiment is almost the same as that of Example 1, and the process of forming the ion doped film 156 and then adding the ion doped film to O 2 is added.
    The substrate of the liquid crystal display device of the present invention doped with ions selected from Si, P, Ge, B, As, Ba, Ti, Tb, Bi ions on the surface of the organic film 155, such as BCB containing a CH group or a CF group In addition, by depositing an inorganic film such as ITO on the doped layer to form a pixel electrode 140, the bonding strength between the pixel electrode and the organic layer is enhanced.
    Therefore, the present invention can reduce the defective peeling of the pixel electrode, the over-etching of the pixel electrode can be prevented because the etchant does not penetrate between the pixel electrode and the organic layer in the process of patterning the pixel electrode, the aperture ratio of the pixel This has the effect of being improved.
    In addition, by oxidizing the doped film to O 2 and forming a pixel electrode on the oxide film, the effect can be further maximized.
    权利要求:
    Claims (12)
    [1" claim-type="Currently amended] Forming a switching element on the transparent substrate,
    Forming an organic film including a bonding structure of a C-H group or a C-F group on the switching device,
    Doping the ions selected from Si, P, Ge, B, As, Ba, Ti, Tb, Bi ions on the surface of the organic film,
    Forming a contact hole by removing a portion of the organic layer and the doped layer so that one terminal portion of the switching element is exposed;
    Forming an inorganic film on the entire surface of the substrate on which the contact hole is formed;
    And patterning the inorganic film to form a pixel electrode formed on the doped film and in contact with one terminal of the switching element.
    [2" claim-type="Currently amended] The method of claim 1,
    The organic film is a manufacturing method of the substrate of the liquid crystal display device, characterized in that the BCB.
    [3" claim-type="Currently amended] The method of claim 1,
    And said inorganic film is ITO.
    [4" claim-type="Currently amended] The method of claim 1,
    And forming the doped film into O 2 before forming the contact hole.
    [5" claim-type="Currently amended] The method of claim 1,
    And forming the contact hole prior to doping the ions.
    [6" claim-type="Currently amended] A switching element formed on the transparent substrate,
    An organic film covering the switching element;
    A doped film formed by doping ions selected from Si, P, Ge, B, As, Ba, Ti, Tb, and Bi ions on the surface of the organic film;
    A contact hole formed by removing a portion of the organic layer and the doped layer on one terminal of the switching element;
    And an inorganic layer in contact with one terminal of the switching element through the contact hole and formed on the doped layer.
    [7" claim-type="Currently amended] The method of claim 6,
    The organic film substrate of a liquid crystal display device comprising a bonding structure of a C-H group or a C-F group.
    [8" claim-type="Currently amended] The method of claim 7, wherein
    The substrate of claim 1, wherein the organic layer is BCB.
    [9" claim-type="Currently amended] The method of claim 8,
    The inorganic film is ITO substrate, characterized in that the liquid crystal display device.
    [10" claim-type="Currently amended] The method of claim 6,
    And the doping layer is formed in the contact hole.
    [11" claim-type="Currently amended] The method of claim 6,
    And the doped film is O 2 etched.
    [12" claim-type="Currently amended] An organic film comprising a bonding structure of a C-H group or a C-F group,
    A doped film formed by doping ions selected from Si, P, Ge, B, As, Ba, Ti, Tb, and Bi ions on the surface of the organic film;
    And an inorganic film formed on the ion doped film.
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    同族专利:
    公开号 | 公开日
    US5963285A|1999-10-05|
    KR100271041B1|2000-11-01|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-11-05|Application filed by 구자홍, 엘지전자 주식회사
    1997-11-05|Priority to KR1019970058219A
    1999-06-05|Publication of KR19990038475A
    2000-11-01|Application granted
    2000-11-01|Publication of KR100271041B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019970058219A|KR100271041B1|1997-11-05|1997-11-05|Substrate of lcd and its fabrication method|
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