High frequency power amplifier

专利摘要:
The present invention relates to a high-frequency power amplifier capable of miniaturization by reducing the number of components and improving the frequency output characteristics and gain stability, wherein the input stage amplifying unit, the intermediate stage matching circuit unit, and the output stage amplifying unit are sequentially connected to each other. The matching circuit unit includes a microstrip line having one end connected to an output terminal of the input terminal amplification unit, a first capacitor connected to the micro strip line at one end thereof and grounded at the other end thereof, and connected to the micro strip line at one end thereof and the output end thereof connected to the micro strip line. And a second capacitor connected to the input terminal of the amplifier and one end connected to the input terminal of the output terminal amplifier, and the other end of which is grounded.
公开号:KR19980058950A
申请号:KR1019960078286
申请日:1996-12-30
公开日:1998-10-07
发明作者:김호영
申请人:조희재；엘지전자부품 주식회사；
IPC主号:

专利说明:

High frequency power amplifier
The present invention relates to a high frequency power amplifier, and more particularly, to a high frequency power amplifier having improved frequency output characteristics and gain stability by changing a capacitor value of a matching circuit.
1 is a circuit diagram showing the configuration of a high frequency power amplifier according to the prior art.
Referring to FIG. 1, a driving amplifier 10 receiving a signal, a coupling capacitor C8, and a power amplifier 20 outputting a signal are sequentially connected.
In FIG. 1, reference numeral Q1 denotes a field effect transistor of the driving amplifier 10, Q2 denotes a field effect transistor of the power amplifier 100, and Vgg1 and Vgg2 denote gate powers of the respective field effect transistors. , Vdd1 and Vdd2 represent drain power of each of the field effect transistors.
Reference numerals R3 and R6 denote resistances for improving the stability of each field effect transistor to prevent oscillation, and R2 and R4 denote resistances for adjusting the gate bias of the field effect transistor Q1, and R5 And R7 represents a resistance for adjusting the gate bias of the field effect transistor Q2.
Reference numerals C3, C4, C5, C9, C10, and C12 denote bypass capacitors.
In the high frequency power amplifier of the prior art having the above configuration, the signal input through the input terminal IN is first amplified by the field effect transistor Q1 of the driving amplifier 10, and then the coupling capacitor C8 is applied. After passing through the field-effect transistor Q2 of the power amplifier 20, the amplifier is amplified to a high output and transmitted through the output terminal OUT.
As described above, the conventional high frequency power amplifier includes 24 passive elements, two active elements, and eight distribution constant circuits, which causes problems in miniaturization.
In addition, in order to personalize the characteristics of the output frequency, a large number of device values have to be changed, which requires a lot of time and cost, and because the gain is uneven, characteristic deterioration is severe and operation becomes unstable, causing oscillation. have.
The present invention has been made to solve the above problems, and an object thereof is to provide a high frequency power amplifier having improved frequency output characteristics and gain stability by changing the capacitor value of the intermediate stage matching circuit.
1 is a circuit diagram showing the configuration of a high frequency power amplifier according to the prior art;
2 is a circuit diagram showing the configuration of a high frequency power amplifier according to the present invention;
Figure 3 is a graph comparing the output and gain stability characteristics in the prior art and the present invention.
* Explanation of symbols for main parts of the drawings
110: input stage amplification unit 120: intermediate stage matching circuit unit
130: output stage amplifier Q1, Q2: field effect transistor
R1, R2, R3, R4: Bias resistor Vgg1, Vgg2, Vdd1, Vdd2: Power supply terminal
C2, C4, C5, C6, C8, C9, C10, C11, C13: bypass capacitor
C1, C3, C7, C12: Coupled Capacitors
L1, L3, L5, L6: Micro Strip Line L2, L4: Choke Coil
The present invention for achieving the above object is configured by sequentially connecting the input stage amplifying unit, the intermediate stage matching circuit unit, the output stage amplifying unit, the intermediate stage matching circuit unit and the micro strip line connected to one end of the output terminal of the input stage amplification unit; A first capacitor connected to the micro strip line at one end thereof and grounded at the other end thereof, a second capacitor connected to the micro strip line at one end thereof and connected to an input terminal of the output amplifier part at the other end thereof, and an input at the output terminal amplifier part thereof at one end thereof; It is connected to the terminal and the other end provides a high frequency power amplifier, characterized in that it comprises a grounded third capacitor.
Hereinafter, a preferred embodiment of a high frequency power amplifier according to the present invention will be described in detail with reference to the accompanying drawings.
2 is a circuit diagram showing a configuration according to an embodiment of the present invention.
Referring to FIG. 2, the high frequency power amplifier of the present invention is configured by sequentially connecting an input stage amplifier 110, an intermediate stage matching circuit 120, and an output stage amplifier 130.
The input stage amplifying unit 110 and the output stage amplifying unit 130 are connected to the field effect transistors Q1 and Q2 and the gate terminals of the field effect transistors Q1 and Q2 to adjust the biases R1 and R2. , R3, R4, power supply terminals Vgg1, Vgg2, Vdd1, and Vdd2 connected to the gate and drain terminals of the field effect transistors Q1 and Q2, and the drain power supply terminals Vdd1 and Vdd2. And a plurality of transmission lines TL1, TL2, TL4, TL5 and TL6 connected to the bypass capacitors C5 and C10 and the gate terminal or the drain terminal of the field effect transistors Q1 and Q2.
The intermediate stage matching circuit unit 120 includes a transmission line L3 having one end connected to an output terminal of the input terminal amplifying unit 110 and a first bypass capacitor having one end connected to the transmission line L3 and the other end grounded. (C6), one end is connected to the micro strip line (L3), the other end is a coupling capacitor (C7) connected to the input terminal of the output terminal amplifier 130, and one end is an input terminal of the output terminal amplifier 130 A second bypass capacitor C8 connected to the other end and grounded is configured.
Of the transmission lines TL1, TL2, TL3, TL4, TL5, and TL6, TL1, TL3, TL5, and TL6 are microstrip lines, and TL2 and TL4 are choke coils.
Further, reference numerals C2, C4, C6, C8, C9, C11, and C13 are bypass capacitors, and C1, C3, C7, and C12 are coupling capacitors.
The operation in the above configuration is similar to the conventional case, after the signal input through the input terminal IN is first amplified by the field effect transistor (Q1) of the input terminal amplifier 110, the intermediate stage matching circuit unit After passing through 120, the field effect transistor Q2 of the output stage amplifier 130 is amplified to a high output and transmitted through the output terminal OUT.
At this time, by adjusting the values of the capacitors C6, C7, and C8 of the intermediate matching circuit unit 120, frequency output characteristics and gain stability are improved as shown in FIG. Deterioration can be minimized.
In FIG. 3, (A) shows a conventional frequency output characteristic and gain stability, and (B) shows a frequency output characteristic and gain stability of the present invention.
As described above, the high frequency power amplifier of the present invention has an effect that can be easily miniaturized because the number of components is smaller than in the conventional case, and the frequency output characteristic and the gain stability can be improved by changing the capacitor value. It works.

权利要求:
Claims (1)
[1" claim-type="Currently amended] The input stage amplification unit, the intermediate stage matching circuit unit, and the output stage amplifying unit are configured in order, and the intermediate stage matching circuit unit has a microstrip line having one end connected to the output terminal of the input stage amplifying unit, and one end connected to the microstrip line and the other end. Is a grounded first capacitor, one end of which is connected to the microstrip line, the other end of which is connected to an input terminal of the output amplifier, and the other end of which is connected to an input terminal of the output amplifier, and the other end of which is a grounded third capacitor. A high frequency power amplifier, characterized in that configured to include.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
1996-12-30|Application filed by 조희재, 엘지전자부품 주식회사

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1996-12-30|Priority to KR1019960078286A

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1998-10-07|Publication of KR19980058950A

优先权:

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申请号 | 申请日 | 专利标题

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KR1019960078286A|KR19980058950A|1996-12-30|1996-12-30|High frequency power amplifier|