• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a method for producing an infrared detector (9) comprising the following steps: - mixed bonding of a detection chip (10) to a second chip ( 13); said step of mixed bonding being carried out by adhesion of contacts (17, 23) and layers of insulation (11, 46) of the two chips (10, 13); - removal of a substrate (80) from said detection chip (10) until reaching a deep oxide layer (45); - producing conductive pads (50) through said deep oxide layer (45) to reach transistors (40) present in a semiconductor layer (42); and- production of micro-bolometers (41) suspended on said deep oxide layer (45) and electrically connected to the conductive pads (50). Figure for the abstract: Fig. 3.
    公开号:FR3089685A1
    申请号:FR1872587
    申请日:2018-12-10
    公开日:2020-06-12
    发明作者:Sébastien Cortial
    申请人:Ulis SAS；
    IPC主号:
    专利说明:

    Description
    Title of the invention: PROCESS FOR PRODUCING A
    INFRARED DETECTOR AND RELATED INFRARED DETECTOR
    Technical area
    The invention relates to the technical field of infrared imaging called "uncooled", that is to say the technical field of infrared detectors comprising micro-bolometers arranged in suspension on a substrate to reduce the influence the temperature of the substrate and the surrounding medium on the performance of the microbolometers.
    The invention finds a particularly advantageous application for reducing the size of an infrared detector comprising electronic digital processing or any additional electronic function requiring increasing the available area, for example an instant read circuit because, in in this case, there is a need for additional area for each pixel of the detector.
    Prior art
    As illustrated in Figure 1 of the prior art, a visible spectrum image detector is generally in the form of a chip 100, called the detection chip, which includes photosensitive elements 21 in visible light and a reading circuit conventionally produced in CMOS technology. The photosensitive elements 21 are formed at the junction between a network of metallic interconnections 14 and a semiconductor substrate 12.
    The reading circuit consists of transistors formed in the semiconductor substrate 12 and connected to the network of metallic interconnections 14. The reading circuit includes an analog-digital converter which delivers a raw digital video signal, on contacts 17 of output of the detection chip 100, as a function of an image captured by the photosensitive elements 21. These contacts 17 emerge from an oxide layer 11 and are connected with contacts 18 disposed on an electronic card 15 on which the chip 100 is fixed. For example, the fixing can be carried out by means of an adhesive 20. In addition, a microlens 16 is formed on the oxide layer 11 to focus the rays on the photosensitive elements 21.
    However, in this configuration called "illumination from above", the losses on the light flux are relatively large because it must pass through the oxide layer 11 and the metal interconnection network 14 before reaching on photosensitive elements 21.
    In the visible spectrum, it is therefore sought to return the detection chip 100 relative to the light flux to limit losses.
    In addition, to improve the quality or the information contained in the digital video signal, for example by applying image correction and / or by associating a motion detection algorithm, it is known to associate a chip digital processing with the detection chip 100. In the same way, these two chips are conventionally produced in different technologies because it is often not possible to integrate the digital processing directly into the detection chip 100.
    For these reasons, several technologies have been developed in the visible spectrum field in order to facilitate the connection of two chips of possibly different technologies to each other.
    A first solution is to mount a first detection chip on a second chip, for example digital processing, this second chip being itself mounted on an electronic card. The contacts of the second chip are then placed around the location intended to receive the detection chip and connections, for example wired, are made between the contacts of the second chip and the contacts of the detection chip and between the contacts of the second chip and the contacts of the electronic card. This solution has the defect of greatly increasing the bulk and of generating parasites or latencies in the communication between the two chips.
    To limit this problem by eliminating the contacts around the detection chip, a second solution proposes to make connection channels through the semiconductor substrate of the detection chip to make contacts under the detection chip to the processing chip.
    However, the channels must be positioned around the area occupied by the photosensitive elements, which nonetheless leads to an increase in the size of the detection chip. From these technical solutions, several implementation variants are possible, for example two chips can be assembled on two opposite sides of the same electronic card by the technique of connection channels.
    These two solutions are the only solutions implemented in the field of uncooled infrared imaging to associate the detection chip with another chip, for example digital processing. In this specific technical field, the photosensitive elements correspond to micro-bolometers mounted in suspension on an upper layer of the detection chip to reduce the influence of the temperature of the substrate and the surrounding medium on the micro-bolometers. To produce these micro-bolometers in suspension, the conventional technique consists in using at least one sacrificial layer deposited on the surface of the detection chip, and in which openings are created to allow the deposition of conductive pads allowing the suspension of the micro-bolometers. On this sacrificial layer, the structure of the micro-bolometers is then formed so that the conductive pads can support the micro-bolometers during the removal of the sacrificial layer.
    In visible imagery, it is known to make a face-to-face bonding between the two chips to further limit the size. The photosensitive elements are then illuminated through the semiconductor substrate of the detection chip, once the latter has thinned. This configuration is called "illumination from below".
    In the example of Figure 2 of the prior art, a first detection chip 100 is fixed on a second chip 105 comprising transistors 24 allowing additional reading or digital processing functions performed in a substrate solid 22. Preferably, the fixing between the two chips 100, 105 is obtained by a “mixed bonding”, that is to say an adhesion between the metal pads 17, 23 on the one hand and between the oxide layers 11 , 46 on the other hand. For example, the adhesion of the metal pads 17, 23 can be obtained by thermocompression and the adhesion of the oxide layers 11, 46 by molecular adhesion.
    This technique is known by the expression "hybrid bonding" in the Anglo-Saxon literature.
    The detection chip 100 is turned over and the insulating layer 11 is found disposed under the semiconductor substrate 12. The contacts 17 flush with the insulating layer 11 are positioned under the detection chip 100 and they are placed opposite contacts 23 of the second chip 105 during the joint bonding of the two chips 100, 105.
    The semiconductor substrate 12 is then thinned to limit optical losses and optimize the illumination of the photosensitive elements 21. The illumination is also controlled by a microlens 16 formed on the semiconductor layer 12. The connections between the electronic card 15 and the second chip 105 are, for example, produced by through connection channels 26 leading to the metallizations 25, and connected to contacts 18 of the electronic card 15, arranged under the second chip 105.
    It follows that the size of the embodiment of Figure 2 is less on the surface on the electronic card 15 than the size of the embodiment of Figure 1, even as the embodiment of the FIG. 2 integrates a second chip 105 integrating functions for reading or digital processing. The estimated gain in surface area on the electronic card is around 30 to 40%.
    However, this embodiment of Figure 2 requires illumination by the rear face of the photosensitive elements 21 since the detection chip 100 is returned.
    Given the manufacturing constraints in suspension of micro-bolometers on the upper face of the detection chip, it seems impossible to directly reproduce this embodiment of Figure 2 in the field of uncooled infrared imaging .
    The technical problem of the present invention is to reduce the size of a detection chip associated with a second chip integrating additional reading or digital processing functions, in the field of uncooled infrared imaging, c that is to say for a detection chip comprising micro-bolometers mounted in suspension on an upper layer of the detection chip.
    Statement of the invention
    To respond to this problem, the invention proposes to use a detection chip comprising a completely depleted semiconductor layer integrating transistors and other active elements allowing the reading function, before transferring the detection chip to a second chip and make the micro-bolometers in suspension after the two chips have hybridized to each other.
    Within the meaning of the invention, a chip comprising a completely depleted semiconductor layer corresponds to a CMOS technology of FDSOI type for the English expression "Fully Depleted Silicon On Insulator". This chip natively comprises a thin layer of insulator and a thin semiconductor layer interposed between the substrate and the metallic interconnections of the CMOS circuit. The thin layer of insulation is called the deep oxide layer, and the thin semiconductor layer is called "Silicon on Insulator" (SOI) although other semiconductor materials can be used such as germanium or arsenide. gallium. This chip therefore presents itself natively with a substrate, surmounted by a deep oxide layer, then a thin semiconductor layer in which transistors and other active elements are produced, and a network of metallic interconnections ending at the surface by a layer of insulation through which electrical contacts can emerge. The thinness of the semiconductor layer makes it possible to obtain a charge circulation throughout the thickness of the semiconductor layer.
    To this end, according to a first aspect, the invention relates to a method for producing an infrared detector comprising the following steps:
    - mixed bonding of a detection chip on a second chip; during mixed bonding; . said detection chip comprising a substrate surmounted by a deep oxide layer, a completely depleted semiconductor layer integrating transistors, a network of metallic interconnections, and an insulating layer;
    . said detection chip comprising a hybridization face having contacts emerging from said insulating layer and connected to the network of metallic interconnections; and. said second chip comprising a substrate in which are made transistors and contacts emerging from an insulating layer at the level of a hybridization face; the mixed bonding step being carried out by adhesion of the contacts and of the layers of insulation of the two chips;
    - removal of the substrate from said detection chip until reaching said deep oxide layer;
    - production of conductive pads through said deep oxide layer to reach the transistors present in said semiconductor layer; and
    - production of micro-bolometers suspended on said deep oxide layer and electrically connected to the conductive pads.
    The invention thus makes it possible to obtain an infrared detector integrating remote analog functions or advanced digital functions, produced by the second chip, while presenting a small area on an electronic card. It is therefore possible to provide infrared detectors integrating complex functions at a low production cost and with a very high compactness. The invention describes the use of transistors in chips. Of course, these transistors can be supplemented by other active elements, in particular of the diode type.
    In addition, micro-bolometers can have structures equivalent to current structures, so that the performance of the infrared detector is not reduced.
    To increase the performance of micro-bolometers, the method may also include a step of producing a metallic reflector on said deep oxide layer. This reflector has the effect of returning part of the thermal energy arriving on the deep oxide layer towards the bolometric membrane of each bolometer, thus creating a resonant cavity, called Fabry-Perot.
    According to a particular arrangement of the invention, the method also includes a step of making contacts through said deep oxide layer to reach an area of said semiconductor layer connected to the network of metallic interconnections, said reflector metal being formed on said contacts so as to form an electrode or a ground plane. Indeed, all of the reflectors or electrodes can, for example, be connected together to form a ground plane facing the transistors present in the semiconductor layer of the reading circuit.
    In addition, the micro-bolometers can be produced with known and controlled methods, typically by using conductive pads formed in a sacrificial layer, and by producing a detector membrane on the sacrificial layer and connected to the conductive pads.
    According to one embodiment, said semiconductor layer being divided, in the imprint of each pixel, into several distinct zones forming an injection transistor, the step of producing micro-bolometers is carried out so as to connect each micro-bolometer in series to an injection transistor. The role of this injection transistor is to generate a controlled electrical voltage on said micro-bolometer. Preferably, the distinct zones of said semiconductor layer form at least the poles of a MOSFET type transistor.
    Preferably, said mixed bonding step being carried out by thermocompression of the contacts and by molecular adhesion of the insulation layers of the two chips.
    According to a second aspect, the invention relates to an infrared detector comprising:
    - a detection chip comprising transistors connected on the one hand to microbolometers mounted in suspension on a deep oxide layer and, on the other hand, through a network of metallic interconnections, to contacts emerging from a layer insulation; and
    - a second chip integrating transistors connected to contacts emerging from an insulating layer;
    the contacts and said insulating layer of said detection chip being bonded with the contacts and said insulating layer of said second chip.
    The transistors of the second chip can have various functions and can be supplemented by other active elements, such as diodes. For example, the transistors complement those of the first chip to carry out the read circuit, to take charge of remote functions or to carry out a digital processing of the signal coming from the detection chip. The complementarity of the transistors of the two chips makes it possible to obtain processing functions applied pixel by pixel and no longer only globally, which is impossible with other conventional transfer techniques.
    Brief description of the figures
    The manner of carrying out the invention as well as the advantages which ensue therefrom will emerge clearly from the embodiment which follows, given by way of indication but not limitation, in support of the appended figures in which Figures 1 and 8 represent :
    [Fig.l]
    Figure 1 is a sectional view of a detection chip mounted directly on an electronic card according to the prior art;
    [Fig.2]
    Figure 2 is a sectional view of a visible field detection chip mounted on a second chip according to the state of the art;
    [Fig.3]
    Figure 3 is a sectional view of an infrared detector according to an embodiment of the invention;
    [Fig.4]
    FIG. 4 is a localized top view of a detection element of the infrared detector of FIG. 3 (FIG. 4b) representing an injection transistor and a microbolometer connected in series, as well as views in partial section according to the axis AA '(fig. 4a) and axis BB' (fig. 4c);
    [Fig.5a]
    Figure 5a is a sectional view of a step of manufacturing a detection chip of the infrared detector of Figure 3;
    [Fig.5b]
    Figure 5b is a sectional view of a step of manufacturing a second chip of the infrared detector of Figure 3;
    [Fig.6]
    Figure 6 is a sectional view of a step of mixed bonding of the chips of Figure 5;
    [Fig.7]
    Figure 7 is a sectional view of a step of making pads on the detection chip of Figure 6; and
    [Fig.8]
    FIG. 8 is a sectional view of a step for producing micro-bolometers on the pads of FIG. 7.
    Detailed description of the invention
    The present invention is described below with reference to the hybridization of a single detection chip on a single second chip, for reasons of simplicity of understanding and illustration. In practice, the invention will most often be implemented to simultaneously bond a wafer integrating several detection chips with a wafer integrating several second chips.
    Figure 3 illustrates a sectional view of an infrared detector 9 according to an embodiment of the invention. This infrared detector 9 has two separate and superimposed chips to reduce the area of use of the infrared detector 9 on an electronic card 15.
    To do this, a detection chip 10 is mounted on a second chip 13, itself mounted on the electronic card 15. The connections between the electronic card 15 and the second chip 13 are made by connection channels 26 on a network of metallic interconnections 25 of the second chip 13 and connected to contacts 18 of the electronic card 15. Thus, by using connection channels 26, it is possible to connect the second chip 13 via contacts 18 arranged under the second chip 13. In practice, solder balls are conventionally placed on the contacts 18 to ensure electrical contact and maintenance between the connection channels 26 and the contacts 18. As a variant, other types of connection can be used between the second chip 13 and the electronic card 15.
    This second chip 13 includes transistors 24 which can be used with other active elements, such as diodes. For example, these transistors 24 make it possible to carry out various functions which cannot be integrated into the pixel surface of the detection circuit: simultaneous reading of the detection elements of “snapshot” type, or analog-digital conversion at the pixel level, or a digital processing of the signal from the detection chip 10. As a variant, any other processing can be implemented by the transistors 24 without changing the invention.
    This second chip 13 also has contacts 23 emerging from an upper face of the second chip 13 and connected to the transistors 24. The upper face of this second chip 13 corresponds to a hybridization face 31 which is opposite to the face of this second chip 13 intended to come opposite the electronic card 15.
    Within the meaning of the invention, the formulation according to which the contacts "emerge" from a face indicates that the contacts are coplanar with a terminal end of the chip at the level of the face. However, in the drawings, the delicacy of these contacts does not allow them to be represented other than schematically.
    The detection chip 10 is fixed to this second chip 13 at the level of contacts 17 emerging from a hybridization face 30 of the detection chip 10. To do this, a mixed bonding is carried out while the faces d hybridization 30 and 31 are planarized and the contacts 17 and 23 are embedded in a matrix of silicon oxide. Molecular adhesion is obtained by mixed bonding between the silicon oxide surfaces, while the contacts 17 and 23, typically made of copper, are welded by thermo compression.
    As illustrated in Figures 5a and 5b, the components of the detection chip 10 and the second chip 13 are preferably made before the bonding of the detection chip 10 mixed on the second chip 13. For this do, the detection chip 10 is made on a substrate 80 surmounted by a deep oxide layer 45, then a thin semiconductor layer 42 completely depleted in which are made transistors, and a network of metallic interconnections 61 ending on the surface by an insulating layer 11 through which electrical contacts 17 can emerge.
    During mixed bonding, the detection chip 10 is turned over so that the contacts 17 are now arranged at the bottom of the detection chip 10. After having matched the contacts 17 of the detection chip 10 with the contacts 23 of the second chip 13, it is possible that the detection chip 10 is slightly offset with respect to the second chip 13, as illustrated in FIGS. 3 and 6 to 8.
    Of course, the illustrated shift is exaggerated and is only intended to illustrate the transfer which took place between the two chips 10 and 13. Following the transfer of the detection chip 10 on the second chip 13, the substrate 80 of the detection chip 10 can be removed by physical or chemical treatment until reaching the deep oxide layer 45.
    Openings are then made through the deep oxide layer 45 to reach the transistors 40 of the semiconductor layer 42 of the detection chip 10. To obtain satisfactory electrical continuity, an ohmic contact can be produced by siliciding on the surface of the semiconductor layer 42 at the openings previously made. To form each micro-bolometer 41, it is then possible to form two conductive pads 50a and 50b through a sacrificial layer deposited on the deep oxide layer 45, so that the current is injected into the micro-bolometer 41 by the pad 50a and that the current returns to the transistors 40 through the pad 50b. The conductive pads 50 are arranged vertically above the contacts made beforehand.
    Preferably, the conductive pads 50 are arranged on specific areas of the semiconductor layer 42, made very conductive by a strong local doping, for example N ++. This treatment is carried out well upstream during the fabrication of the CMOS circuit, conventionally using implantation methods. Thus, each pixel of the infrared detector 9 is formed directly on a MOSLET type transistor, for the English expression “Metal Oxide Semiconductor Field Effect Transistor”, and connected to it in an appropriate manner in order to provide a controlled polarization with each micro-bolometer
    To form this MOSLET transistor, the semiconductor layer 42 is for example structured by an N ++ doping area 53 forming the drain of the MOSLET transistor, juxtaposed with a lightly doped P-type area 58 forming the channel of the MOSLET transistor and also juxtaposed with a second N ++ doped zone 57 forming the source of the MOSLET transistor. The looping of the current after it has passed through the micro-bolometer is provided by an N ++ doped zone 55, as illustrated in FIGS.
    The transistor described above is a PMOS type transistor because the channel is P type doped. Of course, this is only an example and the invention can also be implemented on an NMOS type transistor in reversing doping. In addition, the occupation of the space described in Figures 4a-4c is only a very simple example. In reality and especially for small pixels, the injection transistor is common to a group of 2 or 4 pixels, and it is surrounded by many other much smaller transistors which act as switches.
    Preferably, during the manufacture of the transistors on the detection chip 10, trenches are made in the semiconductor layer 42 to delimit the perimeter of each MOSLET transistor or areas dedicated to the passage of current to the bolometer, then these openings are filled by the deposition of an insulating material. This allows each transistor to be isolated from electrical disturbances from neighboring areas.
    Thus, as illustrated in section BB ', the structure of the semiconductor layer 42 along a transistor therefore has a zone 52 of insulator, a zone 53 doped N ++, a zone 58 doped P , an N ++ doped area 57, and an insulator area 52. The section AA 'consists of an independent zone N + doped allowing the looping of the current after it has passed through the bolometer, an undoped and unused zone 54, and a second N ++ 59 doped zone. The three zones 54, 59 and 55 are isolated by trenches filled with an insulating material 52.
    Each micro-bolometer 41 is formed in suspension from a conductive pad 50a connected to the drain 53 of the MOSLET transistor until it reaches the conductive pad 50b connected to the N ++ doped area 55 forming the loop back of the current to the circuit. The P-doped zone 58, which corresponds to the transistor channel, is arranged between the two N ++ doped zones 53 and 57 which correspond respectively to the drain and to the source of said transistor. The gate 44 of said transistor is connected to the interconnection network 61 of the reading circuit of the detection chip, so that a controlled electrical voltage can be applied thereto. Thus, said transistor makes it possible to adjust the polarization applied to the adjoining bolometer. The transistors are then connected by pads 62 to the metal interconnection network 61.
    Preferably, to improve the detection properties of the micro-bolometer 41 formed on the pads 50a and 50b, it is possible to cover the surface of the deep oxide 45, on an area corresponding to the grid 58 by a reflector 60. According to a particular arrangement of the invention, this reflector 60 can also be connected to the N ++ doped zone 59 of the semiconductor layer 42, the latter being itself connected to the internal interconnection network 61 of the reading the detection chip. Thus, the reflector 60 also makes it possible to apply on the face opposite to the gate of the transistor, an electric field on the channel of the MOSLET transistor through the deep oxide 45. This device makes it possible to confine the charges which circulate in the area 58 at the center of the semiconductor layer 42.
    As illustrated in Figure 7, this reflector 60 can be deposited on the deep oxide layer 45 before the production of the conductive pads 50. Thus, after fixing the detection chip 10 on the second chip 13 by hybrid bonding and then elimination of the substrate from the chip 10, the production process may include the following steps:
    - Creation of openings in the deep oxide layer 45 above the zones 53 and 55 in order to receive the conductive pads 50a and 50b and above the zone 59 to connect the reflector 60;
    - production of ohmic contacts in the openings;
    - Realization of the reflector 60 on the deep oxide layer 45;
    - Deposition of the sacrificial layer 70;
    - Production of conductive pads 50a, 50b; and
    - production of micro-bolometers 41.
    It is also possible to protect the ohmic contacts above the zones 53 and 55 during the production of the reflector 60 by making these contacts after the production of the reflector 60. Thus, the production process may include the following steps:
    - Creation of an opening in the deep oxide layer 45 above the zone 59 to connect the reflector 60;
    - realization of ohmic contacts in the opening;
    - Realization of the reflector 60 on the deep oxide layer 45;
    - Creation of openings in the deep oxide layer 45 above the zones 53 and 55 in order to receive the conductive pads 50a and 50b;
    - production of ohmic contacts in the openings;
    - Deposition of the sacrificial layer 70;
    - Production of conductive pads 50a, 50b; and
    - production of micro-bolometers 41.
    The invention thus makes it possible to obtain an infrared detector 9 using a small area on an electronic card 15 while integrating advanced functions, such as simultaneous reading of detection elements of the “snapshot” type, or analog-to-digital conversion. at the pixel or digital processing level.
    权利要求:
    Claims (1)
    [1" id="c-fr-0001]
    Claims [Claim 1] Method for producing an infrared detector (9) comprising the following steps:- mixed bonding of a detection chip (10) on a second chip (13), and during mixed bonding;. said detection chip (10) comprising a substrate (80) surmounted by a deep oxide layer (45), a completely depleted semiconductor layer (42) integrating transistors (40), a network of metallic interconnections (61 ), and an insulating layer (11);. said detection chip (10) comprising a hybridization face (30) having contacts (17) emerging from said insulating layer (11) and connected to the network of metallic interconnections (61); and. said second chip (13) comprising a substrate (22) in which are made transistors (24) and contacts (23) emerging from an insulating layer (46) at the level of a hybridization face (31) ;the step of mixed bonding being carried out by adhesion of the contacts (17, 23) and of the layers of insulation (11, 46) of the two chips (10, 13);- removal of the substrate (80) from said detection chip (10) until reaching said deep oxide layer (45);- Realization of conductive pads (50) through said deep oxide layer (45) to reach the transistors (40) present in said semiconductor layer (42); and- Production of micro-bolometers (41) suspended on said deep oxide layer (45) and electrically connected to the conductive pads (50). [Claim 2] A method of making an infrared detector according to claim 1, wherein the method also includes a step of making a metal reflector (60) on said deep oxide layer (45). [Claim 3] A method of making an infrared detector according to claim 2, wherein the method also includes a step of making contacts (63) through said deep oxide layer (45) to reach an area (59) of said semi layer -conductive (42) connected to the network of metallic interconnections (61), said metallic reflector (60) being formed on said contacts (63) so as to form an electrode or a ground plane. [Claim 4] Method of producing an infrared detector according to one of claims 1 to 3, in which said semiconductor layer (42) being
    divided, in the imprint of each pixel, into several distinct zones (53, 57, 58) forming an injection transistor, the step of producing micro-bolometers (41) is carried out so as to connect each micro in series -bolometer (41) on an injection transistor. [Claim 5] Method for producing an infrared detector according to claim 4, in which the distinct regions (53, 57, 58) of said semiconductor layer (42) form a MOSFET-type transistor. [Claim 6] Method for producing an infrared detector according to one of claims 1 to 5, in which the step of producing conductive pads (50) and the step of producing micro-bolometers (41) suspended on said layer of deep oxide (45) are produced by using at least one sacrificial layer (70). [Claim 7] Method for producing an infrared detector according to one of claims 1 to 6, in which said step of mixed bonding being carried out by thermocompression of the contacts (17, 23) and by molecular adhesion of the layers of insulator (11, 46) of the two chips (10, 13). [Claim 8] Infrared detector (9) comprising:- a detection chip (10) comprising transistors (40),. connected on the one hand to micro-bolometers (41) mounted in suspension on a deep oxide layer (45) and,. connected on the other hand, through a network of metallic interconnections (61), to contacts (17) emerging from an insulating layer (11); and- a second chip (13) integrating transistors (24) connected to contacts (23) emerging from an insulating layer (46);characterized in that the contacts (17) and the insulating layer (11) of said detection chip (10) are bonded with the contacts (23) and the insulating layer (46) of said second chip (13) . [Claim 9] An infrared detector according to claim 8, in which the transistors (24) of said second chip (13) complement the transistors (40) of said detection chip (10) to produce a circuit for reading micro-bolometers (41). [Claim 10] An infrared detector according to claim 8, in which the transistors (24) of said second chip (13) perform digital processing of a signal from said detection chip (10).
    1/4
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    同族专利:
    公开号 | 公开日
    IL281837D0|2021-05-31|
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    FR3089685B1|2020-11-20|
    KR20210098430A|2021-08-10|
    CA3113900A1|2020-06-18|
    WO2020120129A1|2020-06-18|
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    引用文献:
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    US20130235210A1|2012-03-08|2013-09-12|Bae Systems Information & Electronic Systems Integration Inc.|3d stacked uncooled ir sensor device and method|
    EP2743659A1|2012-12-17|2014-06-18|Commissariat à l'Énergie Atomique et aux Énergies Alternatives|Method for manufacturing an infrared detection device|
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    法律状态:
    2019-12-27| PLFP| Fee payment|Year of fee payment: 2 |
    2020-06-12| PLSC| Publication of the preliminary search report|Effective date: 20200612 |
    2020-09-18| TP| Transmission of property|Owner name: LYNRED, FR Effective date: 20200811 |
    2020-12-29| PLFP| Fee payment|Year of fee payment: 3 |
    2021-12-28| PLFP| Fee payment|Year of fee payment: 4 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1872587A|FR3089685B1|2018-12-10|2018-12-10|PROCESS FOR MAKING AN INFRARED DETECTOR AND ASSOCIATED INFRARED DETECTOR|FR1872587A| FR3089685B1|2018-12-10|2018-12-10|PROCESS FOR MAKING AN INFRARED DETECTOR AND ASSOCIATED INFRARED DETECTOR|
    KR1020217009305A| KR20210098430A|2018-12-10|2019-11-26|Infrared detector manufacturing method and related infrared detector|
    CN201980064803.4A| CN112789488A|2018-12-10|2019-11-26|Infrared detector manufacturing method and related infrared detector|
    PCT/EP2019/082603| WO2020120129A1|2018-12-10|2019-11-26|Process for producing an infrared detector and associated infrared detector|
    EP19806275.4A| EP3894813A1|2018-12-10|2019-11-26|Process for producing an infrared detector and associated infrared detector|
    US17/279,966| US20210389186A1|2018-12-10|2019-11-26|Process for Producing an Infrared Detector and Associated Infrared Detector|
    CA3113900A| CA3113900A1|2018-12-10|2019-11-26|Process for producing an infrared detector and associated infrared detector|
    IL281837A| IL281837D0|2018-12-10|2021-03-25|Process for producing an infrared detector and associated infrared detector|
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