• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a device comprising a waveguide (23) and metal vias (21B) surrounding an end portion (23B) of the waveguide.
    公开号:FR3079037A1
    申请号:FR1852247
    申请日:2018-03-15
    公开日:2019-09-20
    发明作者:Sylvain Guerber；Charles Baudot
    申请人:STMicroelectronics Crolles 2 SAS；
    IPC主号:
    专利说明:

    WAVEGUIDE TERMINATION DEVICE
    Field
    The present application relates to the field of waveguides, and more particularly to waveguides of photonic integrated circuits (optical and / or optoelectronic).
    Presentation of the prior art
    In a photonic integrated circuit, a light signal can be transmitted using a waveguide. When one end of the waveguide opens into the material in which the waveguide is embedded, a waveguide termination device is generally provided. A waveguide termination device makes it possible to at least partially absorb the signal power in order to limit, or even eliminate, the transmission of part of this power to components of the integrated circuit, such power transmission which could disturb the functioning of the circuit. Such a device also makes it possible to limit, or even eliminate, the reflection of part of the signal power at the end of the waveguide, such power reflection also being able to disturb the operation of the integrated circuit.
    summary
    It would be desirable to have a waveguide termination device which overcomes at least some
    B16804 - 17-GR3-0675 disadvantages of known waveguide termination devices. In particular, it would be desirable to have a waveguide termination device for a waveguide formed in an insulating layer of an interconnection structure of a photonic integrated circuit.
    Thus, one embodiment provides a device comprising a waveguide and metal vias surrounding an end portion of the waveguide.
    According to one embodiment, the end portion has a decreasing cross section towards its end.
    According to one embodiment, the vias are orthogonal to the same plane, said plane being orthogonal to said cross section.
    According to one embodiment, the vias are configured to absorb light from the end portion when a light signal propagates in the waveguide.
    According to one embodiment, the vias and the end portion are configured so that the effective index of an optical mode intended to be propagated in the waveguide varies gradually in the end portion.
    According to one embodiment, in a plane orthogonal to the vias, the distance between the vias and the end portion is less than a distance beyond which the power of an optical mode intended to be propagated in the guide wave is less than about -60 dB, preferably less than -60 dB.
    According to one embodiment, the device further comprises a metal plate parallel to a plane orthogonal to the vias, arranged at least partially opposite the end portion and configured to absorb light coming from the end portion when a light signal propagates in the waveguide.
    According to one embodiment, the device further comprises a strip of material absorbing the wavelengths of a signal intended to be transmitted by the waveguide, said strip being parallel to a plane orthogonal to the vias, arranged at least
    B16804 - 17-GR3-0675 partially facing the end portion and being configured to absorb light from the end portion when a light signal propagates in the waveguide.
    According to one embodiment, the device also comprises metallic vias along the waveguide upstream of the end portion.
    According to one embodiment, the vias which run along the waveguide upstream of the end portion are configured so that the effective index of an optical mode intended to be propagated in the waveguide varies progressively up to to the end portion.
    According to one embodiment, the end portion extends from an intermediate portion configured so that the effective index of an optical mode intended to be propagated in the waveguide varies gradually up to the portion end.
    According to one embodiment, the intermediate portion comprises, in a direction parallel to the longitudinal direction of the vias, a stack of a first portion and a second portion, the second portion having a decreasing section towards the end portion.
    According to one embodiment, at the passage from the first portion to the end portion, the first portion and the end portion have the same cross section.
    Another embodiment provides a photonic integrated circuit comprising a device as defined above.
    According to one embodiment, the circuit comprises an interconnection structure, the waveguide, preferably made of silicon nitride, being embedded in an insulating layer, preferably made of silicon oxide, of the interconnection structure. Brief description of the drawings
    These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments made without implied limitation in relation to the attached figures, among which:
    B16804 - 17-GR3-0675 Figure 1 is a schematic sectional view of an example of photonic integrated circuit;
    FIGS. 2A and 2B schematically represent an embodiment of a waveguide termination device; and FIGS. 3A and 3B schematically represent an alternative embodiment of the device of FIGS. 2A and 2B. detailed description
    The same elements have been designated by the same references in the different figures and, moreover, the various figures are not drawn to scale. For the sake of clarity, only the elements useful for understanding the described embodiments have been shown and are detailed. In particular, the photonic integrated circuits in which waveguide termination devices can be provided have not been described, the waveguide termination devices described below being compatible with the waveguides of usual photonic circuits.
    In the following description, when referring to qualifiers of absolute position, such as the terms forward, backward, up, down, left, right, etc., or relative, such as the terms above, below, upper , lower, etc., or to orientation qualifiers, such as the terms horizontal, vertical, etc., reference is made to the orientation of the figures. Unless specified otherwise, the expressions approximately, substantially, approximately and of the order of mean to the nearest 10%, preferably to the nearest 5%.
    In the following description, when reference is made to a cross section of a waveguide, this cross section is orthogonal to the longitudinal direction of the wave guide.
    Figure 1 is a schematic and partial sectional view of a photonic integrated circuit.
    B16804 - 17-GR3-0675
    The photonic integrated circuit comprises various optoelectronic and / or optical components, for example a phase modulator 1 and a coupling network 3, produced from a semiconductor layer 5 of the SOI type resting on an insulating layer 7 disposed on a support 9 such as a silicon substrate. The components 1, 3 of the circuit are arranged on the insulating layer 7 and are covered with an insulating layer 11.
    An interconnection structure 13 covers the layer 11 to electrically connect components of the circuit to each other and / or to contact pads 15, for example arranged at the upper face of the interconnection structure 13. The structure of interconnection 13 comprises portions 17 of metal layers separated by insulating layers 19, and metal vias 21 passing through certain insulating layers 19 to electrically connect portions 17 together, to components of the integrated circuit and / or to contact pads 15. In this example, the interconnection structure 13 comprises four metallization levels, each metallization level comprising the portions 17 of the same metallic layer.
    In the example shown, a waveguide 23, for example of rectangular cross section, is arranged in the layer 19 separating the components 1, 3 of the photonic circuit from the lower metallization level of the interconnection structure, this is ie the level of metallization closest to these components.
    By way of example, in the following description, a waveguide is considered comprising a rectangular cross section of width measured between the two lateral faces of the waveguide, and of height measured between the upper and lower faces of the waveguide. It is also considered by way of example that the waveguide is configured to guide an optical signal the wavelength (s) of which are in the near infrared range, and are for example between 1 and 2 μm , preferably equal to about 1.3 pm or about 1.55 pm, for example 1.3 pm or 1.55 pm.
    B16804 - 17-GR3-0675
    FIGS. 2A and 2B schematically represent an embodiment of a device for terminating the waveguide 23 of FIG. 1. FIG. 2A is a top view of the device, FIG. 2B being a sectional view in the plane BB of Figure 2A.
    The waveguide 23 comprises a portion 23A of substantially constant cross section (delimited by vertical dotted lines in FIGS. 2A and 2B). The dimensions of this portion 23A are chosen so that a light signal propagating in the portion 23A in the form of a guided optical mode remains confined there. It is considered that an optical mode is confined in the waveguide 23 when the dimensions of the waveguide, in a plane transverse to the longitudinal direction of the waveguide, are greater than those which correspond to an effective modal area minimum, i.e. maximum containment. The effective area of an optical mode is defined by:
    A _ [/ Q £ (x, y) l 2 d% dy] 2 eff ffZo ^ (^ y) l 4 dxdy with A e ff the effective area of the mode, x and y the dimensions of the waveguide in the transverse plane (here respectively the width and the height of the waveguide) and E the distribution of the electric field of the optical mode. In this example, the portion 23A has a height less than its width.
    The waveguide comprises an end portion 23B (delimited in length by vertical dotted lines in FIGS. 2A and 2B) extending from one end 25 of the waveguide 23 to the portion 23A. The cross section of the portion 23B decreases to the end 25. In other words, at least one dimension of the cross section, in this example the width of the portion 23B, decreases to the end 25.
    Metal vias 21B surround the end portion 23B. In this example, the vias 21B are arranged along a first lateral face of the portion 23B, beyond the end 25, and along the other lateral face of the portion 23B. These vias 21B are for example substantially orthogonal to the
    B16804 - 17-GR3-0675 plane of FIG. 2A, that is to say a plane orthogonal to the vias 21B and to the cross sections of the waveguide 23 in this example. Preferably, the vias 21B extend in length over at least the entire height of the portion 23B. Preferably, in the plane orthogonal to vias 21B, a substantially constant distance separates two successive vias 21B.
    We take advantage here of the fact that the vias 21B may be identical to the vias 21 (FIG. 1) between the lower metallization level of the interconnection structure 13 and the components of the photonic circuit. Thus, the vias 21B of the device and these vias 21 can be formed simultaneously, without providing additional manufacturing steps compared to those already used in the manufacturing of the circuit of FIG. 1.
    The metal vias 21B are arranged so as to at least partially absorb the light escaping from the end portion 23B, in particular from the lateral faces of this portion 23B in this example. For example, in the plane of FIG. 2A, the vias are arranged at a distance from the waveguide 23 less than or equal to a maximum distance, for example approximately 1.7 μm, preferably 1.7 μm, beyond from which it is considered that the vias no longer have an impact on the light signal. Preferably, the maximum distance is such that, beyond this maximum distance, the power of the optical mode considered is less than about -60 dB, preferably less than -60 dB.
    When a light signal propagates in the waveguide 23 towards the end 25 of the latter, because the cross section of the end portion 23B decreases towards the end 25, the signal does not remain confined in this portion. Thus, all or part of the signal power escapes from the portion 23B in the form of light, in particular from the lateral faces of this portion in this example. This power is at least partially absorbed by the vias 21B which limits, or even eliminates, the power transmitted beyond the vias 21B of the device. In addition, because in the portion 23B the signal strength decreases as it escapes
    B16804 - 17-GR3-0675 of the portion 23B, this results in a reduction or even a suppression of the power reflected towards the portion 23A.
    Preferably, the dimensions of the end portion 23B and the arrangement of the vias 21B relative to this portion 23B are such that the effective index of an optical mode which propagates in the waveguide 23 varies progressively from one end to another of the portion 23B. The optical index of an optical mode is defined as the ratio of the propagation constant of this optical mode on the wave vector in a vacuum to the wavelength considered. The progressive variation of the effective index in the portion 23B makes it possible to further reduce the reflected power.
    In the embodiment represented in FIG. 2A and 2B, the series of vias 21B is extended in the form of a series of optional vias 21A arranged along and on either side of the waveguide 23, beyond of the end portion 23B, in this example along each of the side faces of the portion 23A. The vias 21A are arranged so as to gradually vary, up to the portion 23B, the effective index of the optical mode propagating in the waveguide 23. This makes it possible to further reduce the reflected power when a light signal propagates in the waveguide 23 towards the end 25 of the latter. The vias 21A are preferably identical to the vias 21B, and can then, like the vias 21B, be formed at the same time as the vias 21 of the interconnection structure 13 (FIG. 1). Preferably, in the plane of FIG. 2A, the distance between two successive vias 21A is substantially constant, for example approximately equal to that between two successive vias 21B. By way of example, in the plane of FIG. 2A and when one moves away from the end 25 of the waveguide 23, the vias 21A move away from the waveguide 23, for example by following the contours of a circular function, from which there results a progressive variation, along the portion 23A, of the effective index of the optical mode propagating in the waveguide.
    B16804 - 17-GR3-0675
    The dimensions of the end portion 23B and the arrangement of the vias 21B relative to this portion 23B, as well as the length of the portion 23A bordered by the vias 21A and the arrangement of the vias 21A relative to this portion 23A can be determined by a person skilled in the art from the functional indications provided above. For this, those skilled in the art can use simulation tools, for example simulation tools exploiting finite difference calculations in the time domain (FDTD - Finite Difference Time Domain). An example of such a simulation tool is provided by the company designated under the name Lumerical.
    Figures 3A and 3B schematically represent an alternative embodiment of the device of Figures 2A and 2B, Figure 3A being a top view and Figure 3B being a sectional view in the plane BB of Figure 3A.
    The waveguide of FIGS. 3A and 3B, here referenced 230 and corresponding to the waveguide 23 of FIG. 1, comprises a portion 230A of constant cross section, for example identical to the portion 23A of FIGS. 2A and 2B, a end portion 230B of decreasing cross section to one end 250 of the waveguide, and an intermediate portion 230C of the portion 230A to the portion 230B.
    As in FIGS. 2A and 2B, in this example the width of the end portion 230B decreases up to the end 250. Unlike the end portion 23B of FIGS. 2A and 2B, the height of the portion d the end 230B is here less than that of the portions 230A and 230C, the latter having here an identical height.
    As in FIGS. 2A and 2B, vias 210B surround the portion 230B so as to absorb light escaping from the portion 230B when a light signal propagates there. These vias 210B are identical to vias 21B described in relation to FIGS. 2A-2B with the difference that they are here substantially orthogonal to the plane of FIG. 3A, that is to say to a plane orthogonal to vias 210B and to guide cross sections
    B16804 - 17-GR3-0675 wave 230 in this example. Furthermore, in this example, beyond the end 250, vias 210B are distributed in several, here three, alignments parallel to each other and orthogonal to the longitudinal direction of the waveguide 230.
    A strip 270 of a material absorbing light at the wavelengths considered, for example germanium, doped silicon or a silicide, is disposed at least partially opposite the end portion 230B, in this example under the end portion 230B. The strip 270 is here parallel to the plane of FIG. 3A. The strip 270 extends in length parallel to the longitudinal direction of the portion 230B, over all or part of the length of the portion 230B, preferably from the end 250. For example, the length of the band 270 is approximately two-thirds of that of portion 230B.
    We take advantage here of the fact that the strip 270 can be produced from the semiconductor layer 5 (FIG. 1) already present under the waveguide. For example, a band 270 of germanium can be produced by epitaxy from the layer 5. A band 270 of doped silicon can for example be produced by doping a portion of the layer 5 when the latter is made of silicon. A strip 270 of a silicide can for example be produced by siliciding a portion of the layer 5. Thus, the band 270 can be produced by providing only a few additional steps, or even no additional steps, compared to those already used in the manufacture of the circuit of FIG. 1.
    The strip 270 is arranged relative to the portion 230B so that, when a light signal propagates in the waveguide 230 towards the end 250 of the latter, all or part of the light escaping from the portion 230B, in particular from the underside of the portion 230B in this example, is absorbed by the strip 270.
    A metal plate 290 absorbing light at the wavelengths considered is disposed at least partially opposite the end portion 230B, in this example at
    B16804 - 17-GR3-0675 above the end portion 230B. The plate 290 is here parallel to the plane of Figure 3A. The plate 290 extends in length parallel to the longitudinal direction of the portion 230B, over all or part of the length of the portion 230B. By way of example, the plate 290 extends in length from the end of the portion 230B opposite the end 250 to beyond the vias 210B.
    We take advantage here of the fact that the plate 290 can be a portion 17 of metallic layer of one of the metallization levels of the structure 13 (FIG. 1), for example of one of the two metallization levels closest to the components 1, 3 of the photonic circuit, preferably the second metallization level closest to these components. This plate 290 can therefore be produced without providing any additional step compared to those already used in the manufacture of the circuit of FIG. 1.
    The plate 290 is arranged with respect to the portion 230B so that, when a light signal propagates in the waveguide 230 towards the end 250 of the latter, all or part of the light escaping from the portion 230B, in particular from the upper face of the portion 230B in this example, is absorbed by the plate 290.
    In the embodiment shown, the series of vias 210B is extended in the form of a series of optional vias 210C arranged along and on either side of the intermediate portion 230C, in this example along each of the faces side of this portion. The vias 210C are preferably identical to the vias 210B, and can then, like the vias 210B, be formed at the same time as the vias 21 of the interconnection structure 13 (FIG. 1). In this embodiment, in the plane of FIG. 3A, the vias 210C move away from the portion 230C when one moves away from the end 250, for example by following the contours of a circular function.
    The intermediate portion 230C and, where appropriate, the vias 210C which run along it, are configured, like the vias 21A of the
    B16804 - 17-GR3-0675 FIGS. 2A and 2B, to vary progressively, up to the portion 230B, the effective index of the optical mode propagating within waveguide 230. This makes it possible to reduce the power reflected towards the portion 230A when a signal propagates in the waveguide 230, towards the end 250.
    In this embodiment, the portion 230C comprises, in a direction parallel to the vias 210B, 210C, a stack of two portions 230Cj_ and 230C2, the portion 230Cj_ resting on the portion 230C2 · The portions 230Cj_ and 230C2 are configured so that the signal optics confined in the portion 230A gradually passes into the portion 230B. Thus, at the passage from the portion 230A to the portion 230C, the portion 230A and the stack of the portions 230Cj_ and 230C2 have the same cross section, and, at the level of the passage from the portion 230C to the portion 230B, the portions 230B and 230C2 have the same cross section. The width of the portion 230Cj_ gradually decreases from the portion 230A to the portion 230B. In this example, the width of the portion 230C2 gradually increases from the portion 230A to the portion 230B.
    In the device of FIGS. 3A and 3B, when a light signal propagates in the end portion 230B, all or part of the power of the signal escapes from the portion 230B in the form of light. In particular, in this embodiment, this power escapes from the lateral faces of the portion 230B and, because the height of the portion 230B is less than that of the portion 230A, of the upper and lower faces of the portion 230B. This power which escapes from the portion 230B is then at least partially absorbed by the vias 210B, the strip 270 and the plate 290 which limits, or even eliminates, the power transmitted beyond the device. Similarly to what has been described in relation to FIGS. 2A and 2B, the reduction in the power of the signal propagating in the portion 230B results in a reduction, or even a suppression, of the power reflected towards the portion 230A.
    B16804 - 17-GR3-0675
    Preferably, the dimensions of the end portion 230B, of the strip 270 and of the plate 290, as well as the arrangement of the vias 210B, of the strip 270 and of the plate 290 relative to the portion 230B are chosen such that so that the effective index of the optical mode propagating within the waveguide 230 varies progressively from one end to the other of the portion 230B. This further reduces the power reflected to the 230A portion. By way of example, to obtain such a variation in effective optical index, the width of the plate 290 can increase from its ends, the plate 290 having for example a maximum width beyond the end 250, for example at above the alignment of vias 210B closest to the end 250. In addition, the portion 230B may have a cross section, in this example the width of the cross section, which decreases less rapidly in a portion disposed on the side of the end 250 only in a portion arranged on the side of the portion 230A.
    As for the embodiment of FIGS. 2A and 2B, the person skilled in the art is able to determine the dimensions and the relative arrangement of the elements of the waveguide termination device of FIGS. 3A and 3B, from the functional indications provided above.
    An electrical transverse optical mode is defined here such that its electric field oscillates in a plane parallel to the plane shown in FIGS. 2A and 3A, in other words parallel to the upper face of the substrate 9 (FIG. 1), and perpendicular to the direction of signal propagation in the waveguide. A transverse magnetic optical mode is defined here such that its electric field oscillates in a plane perpendicular to the plane shown in FIGS. 2A and 3A, in other words perpendicular to the upper face of the substrate 9 (FIG. 1), and perpendicular to the direction of signal propagation in the waveguide. The embodiment described in relation to FIGS. 2A and 2B is particularly suitable for the case where the light signal intended to propagate in the waveguide 23 is in the form of an electrical transverse optical mode. The mode of
    B16804 - 17-GR3-0675 embodiment described in connection with FIGS. 3A and 3B is particularly suitable for the case where the light signal intended to propagate in the waveguide 230 is in the form of an electrical transverse optical mode and / or magnetic transverse. In fact, in the embodiment of FIGS. 3A and 3B, the reduction in height of the waveguide 230 facilitates the deconfinement of the transverse magnetic mode and therefore its absorption by the strip 270 and / or the plate 290. We also minimize the power reflected towards the 230A portion.
    By way of example, the waveguide 23 or 230 is made of silicon nitride, the layer 19 in which the waveguide is embedded being for example made of silicon oxide. An advantage of such a waveguide is that it is less sensitive to manufacturing and temperature variations, this guide being for example particularly well suited to the production of optical multiplexers and / or demultiplexers.
    As a specific embodiment, a waveguide 23 or 230 is provided in silicon nitride embedded in a layer 19 of silicon oxide with the following dimensions:
    - width of the portion 23A or 230A of between 180 nm and 5 pm, preferably equal to approximately 700 nm, for example 700 nm;
    - height of the portion 23A or 230A of between 200 nm and 2 pm, preferably equal to approximately 600 nm, for example at 600 nm;
    - width of the end 25 or 250 less than or equal to 1 μm, preferably equal to approximately 180 nm, for example to 180 nm;
    - length of the portion 23B between 1 and 200 μm, preferably equal to approximately 25 μm, for example 25 μm;
    - length of the portion 230B between 1 and 200 μm, preferably approximately equal to 40 μm, for example equal to 40 μm;
    - length of the portion 230C between 1 and 200 μm, preferably equal to approximately 20 μm, for example equal to 20 μm;
    - maximum width of the portion 230Cj_ between 80 nm and 5 μm, preferably equal to approximately 1.2 μm, for example equal to 1.2 μm;
    B16804 - 17-GR3-0675
    - minimum width of the portion 230C2 equal to the maximum width of the portion 230A;
    - height of the portion 230Cj_ between 200 nm and 2 pm, preferably equal to about 600 nm, for example equal to 600 nm;
    - height of the portion 230C2 between 50 nm and 2 pm, preferably equal to approximately 350 nm, for example equal to 350 nm;
    - in a plane orthogonal to the vias, distance between two successive vias 21A and / or 21B or between two successive vias 210B and / or 210C between 100 nm and 5 pm, preferably approximately equal to 360 nm, for example equal to 360 nm ; and
    - in a plane orthogonal to the vias, distance between each vias 21A, 21B, 210B, 210C and the waveguide between 100 nm and 5 pm, preferably equal to approximately 500 nm (for example equal to 500 nm) between the vias 21B or 210B and the portion 23B or 230B respectively, and ranging for example up to about 1.7 pm (for example up to 1.7 pm) between the vias 21A, 210C and the waveguide.
    Such a termination device is suitable for wavelengths comprised in the near infrared range, for example comprised between 1 and 2 μm, preferably equal to approximately 1.3 μm or approximately 1.55 μm, for example at 1.3 pm or 1.55 pm.
    Simulations have shown that, when a signal of wavelengths in the near infrared, polarized in an electric transverse mode, propagates in the waveguide of FIGS. 2A-2B whose dimensions are those indicated above , less than 10 _ 3% o i a power of the signal is reflected back to the portion 23A, and less than 1% of the power signal is transmitted beyond the vias 21A and 21B.
    Other simulations have shown that a signal of wavelengths in the near infrared, polarized in an electric transverse and / or magnetic transverse mode propagates in the waveguide of FIGS. 3A-3B, the dimensions of which are those indicated above, less than 10 _ 3% ia signal power is reflected, and less than 10 _ 3% are signal strength
    B16804 - 17-GR3-0675 is transmitted beyond vias 210B and 210C, band 270 and plate 290.
    Particular embodiments have been described. Various variants and modifications will appear to those skilled in the art. In particular, although a waveguide termination device comprising a strip 270 and a plate 290 has been described in relation to FIGS. 3A and 3B, this device may comprise only the strip 270 or the plate 290.
    The strip 270 can be made of a material other than those indicated above by way of example as soon as this material absorbs light at the wavelengths considered.
    The vias 21A, 21B, 210B and / or 210C, the strip 270 and / or the plate 290 can be electrically connected to a potential, typically the ground, or be left floating.
    The plurality of alignment of vias 210B disposed beyond the end 250 of the waveguide 230, the strip 270 and / or the plate 290 described in relation to FIGS. 3A-3B can be provided in the embodiment described in connection with Figures 2A-2B.
    The embodiments described above are not limited to the case of a waveguide as illustrated in FIG. 1, this waveguide can be formed in another insulating layer of the interconnection structure. More generally, a person skilled in the art is able to apply these embodiments to other waveguides of a photonic integrated circuit, in particular to waveguides made of materials other than those indicated above. above as an example. For example, these embodiments apply to an amorphous silicon waveguide embedded in silicon oxide, silicon nitride, silicon oxide nitride (SiON), aluminum nitride ( AIN), silicon carbon nitride (SiCN) or doped silicon oxides.
    Furthermore, the embodiments described can be adapted for signals having wavelengths different from those indicated above by way of example, for example
    B16804 - 17-GR3-0675 example at wavelengths compatible with a conventional photonic circuit, for example between approximately 400 nm and approximately 5 μm, for example between 400 nm and 5 μm, the person skilled in the art being able to adapt the dimensions of the waveguide 5 and the position of the vias, of the plate and / or of the strip relative to the waveguide as a function of the wavelength considered.
    Various embodiments with various variants have been described above. Note that those skilled in the art will be able to combine various elements of these various embodiments and 10 variants without showing inventive step.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    1. Device comprising a waveguide (23; 230) and metallic vias (21B; 230B) surrounding an end portion (23B; 230B) of the waveguide.
    [2" id="c-fr-0002]
    2. Device according to claim 1, wherein the end portion (23B; 230B) has a decreasing cross section towards its end (25; 250).
    [3" id="c-fr-0003]
    3. Device according to claim 2, wherein the vias (21B; 210B) are orthogonal to the same plane, said plane being orthogonal to said cross section.
    [4" id="c-fr-0004]
    4. Device according to any one of claims 1 to 3, in which the vias (21B; 210B) are configured to absorb light coming from the end portion (23B; 230B) when a light signal propagates in the waveguide (23; 230).
    [5" id="c-fr-0005]
    5. Device according to claim 4, in which the vias (21B; 210B) and the end portion (23B; 230B) are configured so that the effective index of an optical mode intended to be propagated in the guide wave (23; 230) varies gradually in the end portion (23B; 230B).
    [6" id="c-fr-0006]
    6. Device according to any one of claims 1 to 5, in which, in a plane orthogonal to the vias (21B; 210B), the distance between the vias (21B; 210B) and the end portion (23B; 230B) is less than a distance beyond which the power of an optical mode intended to be propagated in the waveguide (23; 230) is less than about -60 dB, preferably -60 dB.
    [7" id="c-fr-0007]
    7. Device according to any one of claims 1 to 6, further comprising a metal plate (290) parallel to a plane orthogonal to the vias (210B), arranged at least partially opposite the end portion (230B) and configured to absorb light from the end portion when a light signal propagates in the waveguide (230).
    [8" id="c-fr-0008]
    8. Device according to any one of claims 1 to 7, further comprising a strip (270) of an absorbent material
    B16804 - 17-GR3-0675 at the wavelengths of a signal intended to be transmitted by the waveguide (230), the said band being parallel to a plane orthogonal to the vias (210B), arranged at least partly in looking at the end portion (230B) and being configured to absorb light from the end portion when a light signal propagates in the waveguide (230).
    [9" id="c-fr-0009]
    9. Device according to any one of claims 1 to 8, also comprising metallic vias (21A; 210C) along the waveguide (23A; 230C) upstream of the end portion (23B; 230B).
    [10" id="c-fr-0010]
    10. Device according to claim 9, in which the vias (21A; 210C) which run along the waveguide (23; 230) upstream of the end portion (23B; 230B) are configured so that the effective index of an optical mode intended to be propagated in the waveguide varies progressively up to the end portion.
    [11" id="c-fr-0011]
    11. Device according to any one of claims 1 to 10, in which the end portion (230B) extends from an intermediate portion (210C) configured so that the effective index of an optical mode intended to be propagated in the waveguide gradually varies up to the end portion.
    [12" id="c-fr-0012]
    12. Device according to claim 11, wherein the intermediate portion (230C) comprises, in a direction parallel to the longitudinal direction of the vias (210B, 210C), a stack of a first portion (230C2) and a second portion (230Cj_), the second portion having a decreasing section towards the end portion (230B).
    [13" id="c-fr-0013]
    13. Device according to claim 12, wherein, at the passage from the first portion (230C2) to the end portion (230B), the first portion and the end portion have the same cross section.
    [14" id="c-fr-0014]
    14. Photonic integrated circuit comprising a device according to any one of claims 1 to 13.
    [15" id="c-fr-0015]
    15. The circuit of claim 14, comprising an interconnection structure (13), the waveguide (23; 230),
    B16804 - 17-GR3-0675 preferably made of silicon nitride, being embedded in an insulating layer (19), preferably made of silicon oxide, of the interconnection structure.
    类似技术:
    公开号 | 公开日 | 专利标题
    CA2749973C|2017-01-10|Optical device having light sensor employing horizontal electrical field
    CA2467055C|2012-05-22|Photonic crystal structure for mode conversion
    US8724100B1|2014-05-13|Wafer level testing of optical devices
    EP2286289B1|2014-11-12|Device for coupling an optical fibre and a nanophotonic component
    EP1752803B1|2019-02-20|Integrated optoelectronic device
    FR3079037A1|2019-09-20|WAVEGUIDE TERMINATING DEVICE
    FR3071626B1|2019-11-01|OPTICAL COUPLING DEVICE FOR A PHOTONIC CIRCUIT.
    FR2663435A1|1991-12-20|INTEGRATED SINGLE - MODE SPACE OPTICAL FILTER AND MANUFACTURING METHOD THEREOF.
    EP0645654A1|1995-03-29|Method of producing a monolitic integrated structure incorporating opto-electronical components and structure so produced
    EP2337167A1|2011-06-22|Hybrid laser coupled to a waveguide
    EP3287822B1|2019-03-13|Photonic circuit comprising a structure to couple to an external device
    EP0783118A1|1997-07-09|Wavelenght-multiplexer
    CA2490287A1|2004-01-08|Device for directional and wavelength selective optical coupling
    EP3306678B1|2019-05-15|Photodiode
    EP3716345B1|2021-03-31|Method for manufacturing a photonic chip comprising an sacm-apd photodiode optically coupled with an integrated waveguide
    FR3085549A1|2020-03-06|WAVE GUIDE
    FR3079036A1|2019-09-20|FILTERING DEVICE IN A WAVEGUIDE
    WO2002059662A1|2002-08-01|Integrated optical structure with reduced birefringence
    EP3516437A1|2019-07-31|Device for coupling a first waveguide to a second waveguide
    FR2681146A1|1993-03-12|OPTOELECTRONIC DEVICE WITH INTEGRATED OPTICAL GUIDE AND PHOTODETECTOR AND METHOD OF MAKING SAME.
    FR3090909A1|2020-06-26|Electro-optical device with ring resonator
    FR3098983A1|2021-01-22|Waveguide of an SOI structure
    FR3078827A1|2019-09-13|PHOTODIODE IN GERMANIUM
    FR3100082A1|2021-02-26|Phase modulator
    FR3085369A1|2020-03-06|ELECTRO-OPTICAL MODULATOR
    同族专利:
    公开号 | 公开日
    US10705294B2|2020-07-07|
    US20190285802A1|2019-09-19|
    CN209728227U|2019-12-03|
    FR3079037B1|2020-09-04|
    CN110275246A|2019-09-24|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US5065123A|1990-10-01|1991-11-12|Harris Corporation|Waffle wall-configured conducting structure for chip isolation in millimeter wave monolithic subsystem assemblies|
    JPH06300933A|1993-04-12|1994-10-28|Mitsubishi Heavy Ind Ltd|Thin film waveguide type polarizing filter|
    JPH1172633A|1997-08-29|1999-03-16|Nippon Telegr & Teleph Corp <Ntt>|Optical waveguide type filter|
    EP1777775A1|2004-06-28|2007-04-25|Mitsubishi Denki Kabushiki Kaisha|Transmission line substrate and semiconductor package|
    WO2010003808A2|2008-07-07|2010-01-14|Kildal Antenna Consulting Ab|Waveguides and transmission lines in gaps between parallel conducting surfaces|
    US20140286606A1|2011-11-30|2014-09-25|Nec Corporation|High-order mode filter|
    US20140029892A1|2012-07-30|2014-01-30|Bae Systems Information And Electronic Systems Integration Inc.|In-line germanium avalanche photodetector|
    US20170090118A1|2014-03-07|2017-03-30|Skorpios Technologies, Inc.|Wide shoulder, high order mode filter for thick-silicon waveguides|
    US7082235B2|2001-09-10|2006-07-25|California Institute Of Technology|Structure and method for coupling light between dissimilar waveguides|
    US20030068125A1|2001-09-28|2003-04-10|The Furukawa Electric Co., Ltd.|Semiconductor laser device, semiconductor laser module and optical fiber amplifier using the semiconductor laser module|
    CN203119074U|2013-01-06|2013-08-07|中国电子科技集团公司第十研究所|Three-port rectangular waveguide microstrip line converter|
    FR3079037B1|2018-03-15|2020-09-04|St Microelectronics Crolles 2 Sas|WAVE GUIDE TERMINATION DEVICE|FR3079037B1|2018-03-15|2020-09-04|St Microelectronics Crolles 2 Sas|WAVE GUIDE TERMINATION DEVICE|
    US10527793B1|2019-01-24|2020-01-07|Elenion Technologies, Llc|Dump terminator|
    法律状态:
    2019-02-19| PLFP| Fee payment|Year of fee payment: 2 |
    2019-09-20| PLSC| Publication of the preliminary search report|Effective date: 20190920 |
    2020-02-20| PLFP| Fee payment|Year of fee payment: 3 |
    2021-02-18| PLFP| Fee payment|Year of fee payment: 4 |
    2022-02-21| PLFP| Fee payment|Year of fee payment: 5 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1852247A|FR3079037B1|2018-03-15|2018-03-15|WAVE GUIDE TERMINATION DEVICE|
    FR1852247|2018-03-15|FR1852247A| FR3079037B1|2018-03-15|2018-03-15|WAVE GUIDE TERMINATION DEVICE|
    US16/295,553| US10705294B2|2018-03-15|2019-03-07|Waveguide termination device|
    CN201920325215.9U| CN209728227U|2018-03-15|2019-03-14|Optical waveguide terminal device|
    CN201910194649.4A| CN110275246A|2018-03-15|2019-03-14|Waveguide terminal equipment|
    [返回顶部]