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    • 专利摘要:
    A process for chemical mechanical polishing of a tungsten-containing substrate to at least reduce the drawing of tungsten elements of 100 μm or less. The method comprises providing a substrate containing tungsten elements of 100 μm or less; providing a polishing composition containing, as initial components: water; an oxidizing agent; arginine or salts thereof; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a surfactant; and possibly a biocide; providing a chemical mechanical polishing pad having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition on the polishing surface at or near the interface between the polishing pad and the substrate; wherein a certain amount of the tungsten is removed by polishing the substrate and at least reducing the stamping of the tungsten elements by 100 μm or less.
    公开号:FR3070021A1
    申请号:FR1857380
    申请日:2018-08-08
    公开日:2019-02-15
    发明作者:Jia-De Peng；Lin-Chen Ho；Syin Hsu
    申请人:Rohm and Haas Electronic Materials CMP Holdings Inc；
    IPC主号:
    专利说明:

    FIELD OF THE INVENTION Field of the Invention
    The present invention relates to the field of chemical mechanical polishing of tungsten to at least inhibit the drawing ("dishing") of tungsten. The present invention relates more specifically to a process for the chemical mechanical polishing of tungsten to at least inhibit the drawing of tungsten by providing a substrate containing tungsten, wherein the tungsten elements have dimensions of 100 µm or less; providing a polishing composition, containing, as initial constituents: water, an oxidizing agent; arginine or salts thereof in amounts sufficient to at least inhibit the drawing of the tungsten elements; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and optionally, a surfactant; and, optionally, a biocide; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and distributing the polishing composition on the polishing surface at or near the interface between the polishing pad and the substrate where a certain amount of the tungsten is removed by polishing the substrate and at least stamping the elements of tungsten is inhibited.
    Invention background
    In the manufacture of integrated circuits or other electronic devices, multiple layers of conductive, semiconductor and dielectric materials are deposited on or removed from a surface of a semiconductor wafer. Thin layers of conductive, semiconductor, and dielectric materials can be deposited by many deposition techniques. Conventional deposition techniques in modern treatment include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma assisted chemical vapor deposition (PECVD), and electrochemical plating (ECP).
    As the layers of material are deposited and removed successively, the upper surface of the wafer becomes non-planar.
    As the subsequent treatment of the semiconductor (for example metallization) requires that the wafer has a flat surface, the wafer must be planarized. Planarization is useful for eliminating surface topography and unwanted surface defects, such as rough surfaces, agglomerated materials, deterioration of the crystal lattice, scuff marks, and polluted layers or materials.
    Mechanical-chemical planarization, or mechanochemical polishing (CMP), is a classic technique used to planarize substrates, such as semiconductor wafers. In a conventional CMP, a wafer is mounted on a support device and positioned in contact with a polishing pad in a CMP apparatus.
    The support device provides an adjustable pressure to the wafer, pressing it against the polishing pad. The pad is moved (for example rotated) relative to the wafer by an external control force. Simultaneously with this, a polishing composition (suspension) or other polishing solution is provided between the wafer and the polishing pad. The wafer surface is then polished and made plane by the chemical and mechanical action of the pad surface and the suspension. However, there is a great deal of complexity involved in CMP. Each type of material requires a unique polishing composition, an appropriately developed polishing pad, optimized process settings for both polishing and cleaning after CMP and other factors which must be individually sized for the application of polishing of a particular material.
    Chemical mechanical polishing has become a preferred method of polishing tungsten during the formation of tungsten interconnects and contact pins in integrated circuit designs. Tungsten is frequently used in integrated circuit designs for contact / vias plugs. Typically, a contact or through hole is formed through a dielectric layer on a substrate to expose regions of an underlying component, for example, first level metallization or interconnection. Tungsten is a hard metal and the Tungsten CMP operates at relatively aggressive settings which pose unique challenges for the Tungsten CMP. Unfortunately, several suspensions of CMP used to polish tungsten, due to their aggressive nature, cause the problem of overpolishing and stamping resulting in nonuniform or non-planar surfaces. The term stamping refers to excessive (unwanted) removal of metal, such as tungsten, from metal interconnect precursors or other elements on semiconductors during CMP, thereby causing unwanted cavities in tungsten. Stamping is undesirable since, in addition to causing non-planar surfaces, it negatively affects the electrical performance of the semiconductor. The severity of stamping can vary but is typically severe enough to cause erosion of the underlying dielectric materials, such as silicon dioxide (TEOS). Erosion is undesirable since the dielectric layer must be ideally free of defects and free of cavities to ensure optimal electrical performance of the semiconductor.
    Topographic defects which may result from such stamping and erosion may further lead to nonuniform removal of additional materials from the substrate surface, such as a barrier layer material disposed under the conductive material or dielectric material and producing a surface substrate having a quality lower than that desired which can negatively impact the performance of integrated circuits of the semiconductor. In addition, as the elements on the surface of the semiconductors become increasingly miniaturized, it becomes increasingly difficult to successfully polish the surfaces of the semiconductors.
    Another problem associated with polishing tungsten is corrosion. Tungsten corrosion is a classic side effect of CMP. During the CMP process, the metal polishing suspension that remains on the surface of the substrate continues to corrode the substrate beyond the effects of CMP. Corrosion is sometimes desired; however, in most semiconductor processes, corrosion must be reduced or inhibited.
    There is therefore a need for a polishing process and a CMP composition for tungsten which at least inhibits the drawing of tungsten.
    Summary of the invention
    The present invention provides a chemical mechanical polishing process for tungsten, comprising: providing a substrate comprising tungsten and a dielectric, wherein the tungsten elements have dimensions of 100 µm or less; the supply of a chemical mechanical polishing composition, comprising, as initial constituents: water; an oxidizing agent; arginine or salts thereof in amounts of 10 to 500 ppm; a colloidal silica abrasive; a dicarboxylic acid or a salt thereof; a source of iron (III) ions; and, optionally, a pH adjusting agent; and, optionally, a surfactant; and possibly a biocide; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and distributing the chemical mechanical polishing composition over the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate;
    wherein a certain amount of the tungsten is removed by polishing the substrate, and at least the drawing of the tungsten elements having dimensions of 100 µm or less is reduced.
    The present invention provides a chemical mechanical method of polishing tungsten, comprising: providing the substrate comprising tungsten and a dielectric, wherein the tungsten elements have dimensions of 100 µm or less; the supply of a chemical mechanical polishing composition, comprising, as initial constituents: water; an oxidizing agent; arginine or salts thereof in amounts of 10 to 500 ppm, preferably 30 to
    500 ppm; a colloidal silica abrasive preferably having a negative zeta potential; a dicarboxylic acid or a salt thereof; a source of iron (III) ions; and, optionally, a pH adjusting agent, and, optionally, a surfactant; and possibly a biocide; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and distributing the chemical mechanical polishing composition over the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein a certain amount of the tungsten is removed by polishing the substrate and at least the drawing of the tungsten elements having dimensions 100 µm or less is reduced; wherein the chemical mechanical polishing composition provided has a tungsten shrinkage rate of> 1000 Â / min, preferably> 1500 Â / min with a platinum speed of 80 revolutions per minute, a support speed of 81 revolutions per minute, a flow rate of chemical-mechanical polishing composition of 125 ml / min, a nominal downward force of 21.4 kPa on a polishing machine of 200 mm; and, wherein the chemical mechanical polishing pad 20 comprises a polyurethane polishing layer containing microparticles with polymeric hollow cores and a nonwoven sub-pad impregnated with polyurethane.
    The present invention provides a chemical mechanical process for polishing tungsten, comprising: providing a substrate comprising tungsten and a dielectric, wherein the tungsten elements have dimensions 100 µm or less; the supply of a chemical mechanical polishing composition, comprising, as initial constituents: water; an oxidizing agent; arginine or salts thereof in amounts of 30 to 500 ppm; a colloidal silica abrasive having negative zeta potential; malonic acid or a salt thereof; a source of iron (III) ions; and, optionally, a pH adjusting agent; and, optionally, a surfactant; possibly a biocide; providing a chemical mechanical polishing pad, having a polishing surface; the creation of dynamic contact at an interface between the chemical mechanical polishing pad and the substrate and at least the drawing of tungsten elements having dimensions of 100 μm or less is reduced; and dispensing the chemical mechanical polishing composition over the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein a certain amount of the tungsten is removed by polishing the substrate; wherein the chemical mechanical polishing composition provided has a tungsten shrinkage rate of> 1000 Â / min, preferably> 1500 Â / min 10 with a platinum speed of 80 revolutions per minute, a support speed of 81 revolutions per minute, a flow rate of mechanochemical polishing composition of 125 ml / min, a nominal downward force of 21.4 kPa on a polishing machine of 200 mm; wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer 15 containing microparticles with hollow polymer cores and a nonwoven sub-pad impregnated with polyurethane.
    The present invention provides a method of mechanochemical polishing of tungsten, comprising: providing the substrate comprising tungsten and a dielectric, wherein the tungsten elements 20 have dimensions of 100 µm or less; the supply of a chemical mechanical polishing composition, comprising, as initial constituents: water; from 0.01 to 15% by mass of an oxidizing agent, in which the oxidizing agent is hydrogen peroxide; from 30 ppm to 500 ppm of arginine or a salt thereof; from 0.01 to 10% by mass, preferably from 0.01 to 15% by mass, of a colloidal silica abrasive preferably having a negative zeta potential; from 1 to 2600 ppm of a dicarboxylic acid or a salt thereof, preferably from 100 to 1400 ppm of malonic acid or a salt thereof; from 100 to 1100 ppm of a source of iron (III) ions, wherein the source of iron (III) ions is ferric nitrate; and, optionally, a pH adjusting agent; optionally a surfactant; possibly a biocide; wherein the chemical mechanical polishing composition has a pH of 1 to 7; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and distributing the chemical mechanical polishing composition over the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein a certain amount of the tungsten is removed by polishing the substrate and at least the drawing of the tungsten elements is reduced.
    The present invention provides a mechanochemical polishing process for tungsten, comprising: providing a substrate comprising tungsten and a dielectric, wherein the tungsten elements have dimensions of 100 µm or less; the supply of a chemical mechanical polishing composition, comprising, as initial constituents: water; from 1 to 3% by mass of an oxidizing agent, in which the oxidizing agent is hydrogen peroxide; from 30 ppm to 500 ppm of arginine or a salt thereof; from 0.2 to 5% by mass of a colloidal silica abrasive preferably having a negative surface charge; from 120 to 1,350 ppm of malonic acid; from 150 to 700 ppm of a source of iron (III) ions, in which the source of iron (III) ions is ferric nitrate, and, optionally, a pH adjusting agent; and, optionally, an anionic ether sulfate surfactant; and possibly a biocide; wherein the chemical mechanical polishing composition has a pH of 2 to 3; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and distributing the chemical mechanical polishing composition over the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein a certain amount of the tungsten is removed by polishing the substrate and at least the drawing of the tungsten elements is reduced.
    The foregoing methods of the present invention use a chemical mechanical polishing composition comprising arginine or salts thereof in amounts from 10 to 500 ppm; an oxidizing agent; a colloidal silica abrasive; a dicarboxylic acid or a salt thereof; a source of iron (III) ions; some water ; and, optionally, a pH adjusting agent; and, optionally, a surfactant; and, optionally, a biocide to polish tungsten and simultaneously at least inhibit the drawing of tungsten to provide a substantially planar tungsten surface. In addition to inhibiting drawing, the chemical mechanical polishing compositions of the present invention can inhibit corrosion of tungsten. The chemical mechanical polishing compositions of the present invention also exhibit good tungsten to silicon dioxide selectivity.
    Special chemical mechanical polishing compositions used in these methods are advantageously chosen from:
    A composition comprising, as initial constituents:
    the water ; from 0.01 to 10% by mass of the oxidizing agent, where the oxidizing agent is hydrogen peroxide; from 30 to 500 ppm of arginine or a salt thereof; from 0.01 to 15% by mass of the colloidal silica abrasive; from 1 to
    600 ppm of dicarboxylic acid or a salt thereof; from 100 to 1100 ppm of the source of iron (III) ions, where the source of iron (III) ions is ferric nitrate; and, optionally, the pH adjusting agent; optionally, the surfactant; possibly the biocide; the chemical mechanical polishing composition 20 preferably having a pH of 1 to 7.
    A composition comprising, as initial constituents:
    the water ; 0.1 to 5% by mass of the oxidizing agent, where the oxidizing agent is hydrogen peroxide; from 30 to 250 ppm of arginine or a salt thereof 25; from 0.05 to 10% by mass of the colloidal silica abrasive; from 100 to 1,400 ppm of dicarboxylic acid or a salt thereof; 150 to 1,000 ppm of the source of iron (III) ions; where the source of iron (III) ions is ferric nitrate; and, optionally, the pH adjusting agent; optionally, an anionic ether sulfate surfactant; the chemical mechanical polishing composition preferably having a pH of 1.5 to 4.5.
    A composition comprising, as initial constituents:
    the water ; from 0.1 to 3% by mass of the oxidizing agent, where the oxidizing agent is hydrogen peroxide; from 30 to 250 ppm of arginine or a salt thereof;
    0.1 to 5% by mass of the colloidal silica abrasive; from 120 to 1,350 ppm of the dicarboxylic acid or a salt thereof, where the dicarboxylic acid is malonic acid; from 150 to 850 ppm of the source of iron (III) ions, where the source of iron (III) ions is ferric nitrate; and, optionally, the pH adjusting agent; optionally, an anionic ether sulfate surfactant; the chemical mechanical polishing composition preferably having a pH of 1.5 to 3.5.
    The aforementioned specific chemical-mechanical polishing compositions used in the process of the invention have a tungsten shrinkage speed of> 1,500 Â / min with a platinum speed of 80 revolutions per minute, a support speed of 81 revolutions per minute. minute, a flow rate of chemical-mechanical polishing composition of 125 ml / min, a nominal downward force of 21.4 kPa on a polishing machine of 200 mm; and, the chemical mechanical polishing pad used in the process comprises a polyurethane polishing layer containing microparticles with hollow polymer cores and a nonwoven sub-pad impregnated with polyurethane.
    Detailed description of the invention
    As used throughout this description the following abbreviations have the following meanings, unless the context indicates otherwise: ° C = degrees Centigrade; g = grams; L = liters; mL = milliliters; μ = pm = microns; kPa = kilopascal; Â = angstroms; mV = millivolts; DI = deionized; ppm = parts per million; mm = millimeters; cm = centimeter; min = minute; rpm = revolutions per minute; Ibs = pounds; kg = kilograms; W = tungsten; PO = propylene oxide; EO = ethylene oxide; ICP-OES = inductively coupled plasma optical emission spectroscopy; DLS = dynamic light scattering; % by mass = percent by mass; VR = withdrawal speed.
    The term mechanical-chemical polishing or CMP refers to a process where a substrate is polished by means of chemical and mechanical forces alone and is distinguished from a mechanical-electrochemical polishing (ECMP) where an electrical polarization is applied to the substrate; the term arginine indicates the α-amino acid arginine and includes L-arginine (the most classic natural form). The term TEOS indicates the silicon dioxide formed from the decomposition of tetraethyl orthosilicate (Si (OC 2 H 5 ) 4). The term plan indicates a practically flat surface or a flat topography having two dimensions of length and width. The term dimensions refers to line widths. The term one and one refers to both the singular and the plural. All percentages are by mass, unless otherwise indicated. All the digital intervals are inclusive and combinable in any order, except for the case where it is logical that such digital intervals must necessarily add up to 100%.
    The method of polishing a substrate of the present invention uses a chemical mechanical polishing composition containing an oxidizing agent; arginine or salts thereof in amounts of 10 ppm to 500 ppm; a colloidal silica abrasive; a dicarboxylic acid or a salt thereof; a source of iron (III) ions; some water ; and, optionally, a pH adjusting agent and, optionally, a surfactant; and optionally a biocide to provide removal of tungsten from the surface of the substrate while at least inhibiting the drawing of tungsten.
    The method of polishing a substrate of the present invention preferably comprises: providing the substrate, wherein the substrate comprises tungsten and a dielectric, wherein the tungsten elements have dimensions of 100 µm or less, preferably , from 100 pm to 0.25 pm, even better, from 50 pm to 0.25 pm, much better still, from 10 pm to 0.25 pm and particularly preferably from 9 pm to 0.25 pm or, in the case of alternative, even better preferably from 7 pm to 0.25 pm; providing a chemical mechanical polishing composition comprising, (preferably, consisting of), as initial constituents: water; an oxidizing agent, preferably in amounts of at least 0.01% by mass to 10% by mass, even better, in amounts from 0.1% by mass to 5% by mass, much better still of 1% by mass at 3% by mass; arginine or salts thereof or their mixtures in amounts from 10 ppm to 500 ppm, preferably from 30 ppm to 500 ppm; a colloidal silica abrasive, preferably in amounts from 0.01% by mass to 15% by mass, still better from 0.05% by mass to 10% by mass, much better still from 0.1% by mass to 7.5% by mass, particularly preferably from 0.2% by mass to 5% by mass; a dicarboxylic acid, a salt thereof or mixtures thereof, preferably in amounts from 100 ppm to 1,400 ppm, more preferably from 120 ppm to 1,350 ppm; a source of iron (III) ions, preferably, wherein the source of iron (III) ions is ferric nitrate; and, optionally, a pH adjusting agent; wherein the chemical mechanical polishing composition has a pH of 1 to 7; preferably 1.5 to 4.5; even better from 1.5 to 3.5; particularly preferably, from 2 to 3; and, optionally, a surfactant; and, optionally, a biocide, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and distributing the chemical mechanical polishing composition over the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein at least some of the tungsten is removed by polishing the substrate and at least the stamping of the tungsten elements is reduced, and preferably the stamping of the tungsten elements is reduced and corrosion of the tungsten is inhibited.
    The substrate provided is preferably a semiconductor substrate comprising tungsten and a dielectric, such as TEOS.
    In the process for polishing a substrate of the present invention, the water contained, as an initial constituent, in the chemical mechanical polishing composition provided is preferably at least one of deionized and distilled to limit the incidental impurities.
    Preferably, in the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided contains, as an initial constituent, an oxidizing agent, in which the oxidizing agent is chosen from the group consisting of peroxide hydrogen (H 2 O 2 ), monopersulfates, iodates, magnesium perphthalate, peracetic acid and other per-acids, persulfate, bromates, perbromate, persulfate, peracetic acid, periodate, nitrates, iron salts, cerium salts, salts of Μη (III), Μη (IV) and Μη (VI), silver salts, copper salts, chromium salts, cobalt salts, halogens, hypochlorites and a mixture thereof. The oxidizing agent is even better chosen from the group consisting of hydrogen peroxide, perchlorate, perbromate, periodate, persulfate and peracetic acid. The oxidizing agent is much better still hydrogen peroxide.
    Preferably, in the process of polishing a substrate of the present invention, the chemical mechanical polishing composition provided contains, as an initial constituent, from 0.01 to 10% by mass, even better, from 0.1 to 5% by mass; much better still, from 1 to 3% by mass of an oxidizing agent.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably contains, as an initial constituent, a source of iron (III) ions. In the process of the present invention, the chemical mechanical polishing composition provided contains, even better as an initial constituent, a source of iron (III) ions, in which the source of iron (III) ions is chosen from the group consisting of iron (III) salts. In the process of the present invention, the chemical mechanical polishing composition provided contains even better, as an initial constituent, a source of iron (III) ions, in which the source of iron (III) ions is nitrate. ferric (Fe (NO 3 ) 3 ).
    In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably contains, as an initial constituent, a source of iron (III) ions sufficient to introduce from 1 to 250 ppm, preferably from 5 to 200 ppm, even better from 7.5 to 150 ppm, much better still from 10 to 100 ppm of iron (III) ions in the mechanochemical polishing composition.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably contains, as an initial constituent, a source of iron (III) ions.
    In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided contains even better, as an initial constituent, from 100 to 1100 ppm, preferably from 125 to 1000 ppm, even better , from 150 to 850 ppm and, much better, from 175 to 700 ppm of a source of iron (III) ions. In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided contains much better still, as an initial constituent, from 100 to 1100 ppm, preferably from 150 to 1000 ppm, even better, from 150 to 850 ppm, much better still from 175 to 700 ppm of a source of iron (III) ions, in which the source of iron (III) ions is ferric nitrate (Fe (NOs)) 3).
    In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably contains, as an initial constituent, arginine (L-arginine), arginine salts, or mixtures of these. Arginine salts include, L-arginine HCl, arginine malate and an N-methyl-L-arginine acetate salt but are not limited thereto. The arginine salts are preferably chosen from L-arginine HCl and N-methylL-arginine acetate, the arginine salt is even better L-arginine HCl. Preferably, in the process of polishing a substrate of the present invention, arginine (L-arginine), in place of its salts and mixtures, is included in the chemical mechanical polishing composition of the present invention . In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided contains, as an initial constituent, from 10 ppm to 500 ppm, preferably from 30 ppm to 500 ppm, even better, from 50 ppm to 500 ppm, much better still, from 30 ppm to 350 ppm; particularly preferably, from 30 ppm to 250 ppm, particularly even better, from 30 ppm to 150 ppm (for example 30-50 ppm, 50-100 ppm or 50-150 ppm) of one or more arginines (L- arginine) and salts thereof.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably contains a colloidal silica abrasive having a negative zeta potential. In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided even better contains a colloidal silica abrasive having permanent negative zeta potential, in which the chemical mechanical polishing composition has a pH of 1 to 7, preferably 1.5 to 4.5; even better, from 1.5 to 3.5; much better still, from 2 to 3; particularly preferably, from 2 to 2.5. In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided much better still contains a colloidal silica abrasive having permanent negative zeta potential, in which the chemical mechanical polishing composition has a pH from 1 to 7, preferably from 1.5 to 4.5; even better, from
    1.5 to 3.5; much better still, from 2 to 3; particularly preferably, from 2 to 2.5 as indicated by a zeta potential of -0.1 mV to -20 mV.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably contains, as an initial constituent, a colloidal silica abrasive, in which the colloidal silica abrasive has an average size of particles <100 nm, preferably 5 to 100 nm; even better, from 10 to 90 nm; much better still, from 20 to 80 nm as measured by dynamic light scattering techniques.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably contains from 0.01 to 15% by mass, preferably from 0.05 to 10% by mass, even better , from 0.1 to 7.5% by mass, much better still from 0.2 to 5% by mass, particularly preferably, from 0.2 to 2% by mass of a colloidal silica abrasive. The colloidal silica abrasive preferably has a negative zeta potential.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided may contain a mixed colloidal silica abrasive, wherein the mixed colloidal silica abrasive comprises small particle colloidal silica abrasives comprising particles of median (average) size (as measured by DLS) of 40-50 nm, preferably of 42-45 nm, even better, of 44-45 nm, preferably in amounts of 0.01 to 5 7 , 5% by mass, preferably from 0.05 to 5% by mass, even better, from 0.5 to 2% by mass, much better still, from 0.5 to 1.5% by mass, particularly preferably from 0.5 to 1% by mass, and includes abrasives of large particles comprising particles of median (average) sizes of 70-100 nm, preferably of 75-80 nm, more preferably of 75- 76 nm, preferably in amounts of 0.01 to 7.5% by mass, even better, from 0.05 to 5% by mass, much better still, of 0.5 to 2% by mass, particularly preferably, from 0.5 to 1.5% by mass, particularly still better from 0.5 to 1% by mass. Colloidal silica abrasives preferably have a negative zeta potential.
    In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably contains, as an initial constituent, a dicarboxylic acid, in which the dicarboxylic acid comprises malonic acid, the acid oxalic, succinic acid, adipic acid, maleic acid, malic acid, glutaric acid, tartaric acid, salts thereof or mixtures thereof but is not limited to these. In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided even better contains, as an initial component, a dicarboxylic acid, in which the dicarboxylic acid is selected from the group consisting of acid malonic, oxalic acid, succinic acid, tartaric acid, salts thereof and mixtures thereof. The chemical mechanical polishing composition provided contains even better, as an initial component, a dicarboxylic acid, in which the dicarboxylic acid is selected from the group consisting of malonic acid, oxalic acid, succinic acid, salts thereof and mixtures thereof.
    In the process of polishing a substrate of the present invention, the chemical mechanical polishing composition provided contains even better, as an initial constituent, malonic acid or salts thereof, as dicarboxylic acid .
    In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably contains, as an initial constituent, from 1 to 2,600 ppm, preferably from 100 to 1,400 ppm, even better , from 120 to 1350 ppm, much better still, from 130 to 1100 ppm, of a dicarboxylic acid, in which the dicarboxylic acid comprises malonic acid, oxalic acid, succinic acid, acid adipic, maleic acid, malic acid, glutaric acid, tartaric acid, salts thereof or mixtures thereof but is not limited to these. In the method of polishing a substrate of the present invention, the mechanochemical polishing composition provided preferably contains, as an initial constituent, from 1 to 2,600 ppm of malonic acid, salt thereof or mixtures of thereof. In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided contains even better, as an initial constituent from 100 to 1,400 ppm, even better, from 120 to 1,350 ppm, much better still , 130 to 1350 ppm, malonic acid or a salt thereof, as dicarboxylic acid.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably has a pH of 1 to 7. In the method of polishing a substrate of the present invention, the polishing composition the chemical-mechanical supplied has an even better pH of 1.5 to 4.5. In the process of polishing a substrate of the present invention, the chemical mechanical polishing composition provided has a much better pH of
    1.5 to 3.5. In the process of polishing a substrate of the present invention, the chemical mechanical polishing composition provided, much better still has a pH of 2 to 3; and, particularly preferably, a pH of 2 to 2.5.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided optionally contains a pH adjusting agent. The pH adjusting agent is preferably selected from the group consisting of inorganic and organic pH adjusting agents. The pH adjusting agent is preferably selected from the group consisting of inorganic acids and inorganic bases. The pH adjusting agent is even better selected from the group consisting of nitric acid and potassium hydroxide. The pH adjusting agent is much better still potassium hydroxide.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided optionally contains a surfactant. In the method of polishing a substrate of the present invention, the surfactant is preferably a surfactant containing PO or EO or PO / EO. In the process for polishing a substrate of the present invention, the surfactant is even better a PO or EO or PO / EO surfactant containing an anionic functional group. In the process for polishing a substrate of the present invention, the surfactant is much better still an anionic ether sulfate having the formula (I):
    C / 7H2 / 7 + iO - PO <EOy SO3 where n can be equal to 12, 15, 18, 20, 22, 25, 28, 30, 35, 38, 40, 42, or 44; x can be 0, 2, 5, 8, 10, 12, 14, 16, 18, 20, 30, 40 or 50; and y can be 0, 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 80, 90 or 100 provided that xet y cannot be simultaneously equal to 0, and a counterion may preferably be an alkali metal ion, such as a sodium cation or potassium cation; or an ammonium cation. In the process for polishing a substrate of the present invention, the anionic ether sulfate is preferably sodium lauryl ether sulfate (SLES).
    In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided may contain, as an initial constituent, from 50 ppm to 1000 ppm, preferably from 100 ppm to 900 ppm, even better , from 120 ppm to 600 ppm, much better still, from 140 ppm to 250 ppm, of an anionic ether sulfate. In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided contains even better, as an initial constituent, from 50 to 1000 ppm, even better from 100 ppm to 900 ppm, much better still from 120 ppm to 600 ppm, particularly preferably from 140 ppm to 250 ppm, of an alkali metal salt of an anionic ether sulfate surfactant. In the process for polishing a substrate of the present invention, the chemical mechanical polishing composition provided contains even better, as an initial constituent, preferably from 50 ppm to 1000 ppm, preferably from 100 ppm to 900 ppm , still better, from 120 ppm to 600 ppm, much better still, from 140 ppm to 250 ppm, of sodium lauryl ether sulfate.
    The polishing composition may optionally contain one or more biocides, such as KORDEX md MLX (9.5-9.9% of methyl-4isothiazolin-3-one, 89.1-89.5% of water and <1, 0% bound reaction product) or KATHON ® ICP III containing active ingredients of 2-methyl-410 isothiazoline-3-one and 5-chloro-2-methyl-4-isothiazoline-3-one, each manufactured by The Dow Chemical Company, (KATHON MD and KORDEX ® are registered trademarks of The Dow Chemical Company). Such biocides can be included in the chemical mechanical polishing compositions of the present invention in conventional amounts, as known to those of skill in the art.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing pad provided may preferably be any suitable polishing pad known in the art. Those skilled in the art will know how to choose a chemical mechanical polishing pad 20 suitable for use in the process of the present invention.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing pad provided is even better chosen from woven and non-woven polishing pads. In the polishing pad of a substrate of the present invention, the chemical mechanical polishing pad provided much more preferably comprises a polyurethane polishing layer. In the method of polishing a substrate of the present invention, the chemical mechanical polishing pad provided much more preferably comprises a polyurethane polishing layer containing microparticles with hollow polymer cores and a non-woven under pad impregnated with polyurethane. The chemical mechanical polishing pad provided preferably has at least one groove on the polishing surface.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided is preferably distributed over a polishing surface of the chemical mechanical polishing pad provided at or near an interface between the pad of chemical mechanical polishing and the substrate.
    In the method of polishing a substrate of the present invention, a dynamic contact is preferably created at the interface between the chemical mechanical polishing pad supplied and the substrate with a downward force of 0.69 to 34.5 kPa perpendicular to a surface of the substrate which is polished.
    In the method of polishing a substrate of the present invention, the chemical mechanical polishing composition provided preferably has a tungsten shrinkage rate of> 1000 Å / min; preferably> 1,500 Â / min; much better still, from> 1,700 Â / min. In the method of polishing a substrate of the present invention, in which the chemical mechanical polishing composition provided has even better, a shrinkage rate of> 1000 Å / min; preferably> 1,500 Â / min; much better still, from> 1,700 Â / min; and W / TEOS selectivity> 2. In the chemical mechanical polishing process of a substrate of the present invention, wherein the tungsten is removed from the substrate at a tungsten removal rate of> 1000 Å / min; preferably> 1,500 Â / min, more preferably> 1,700 Â / min; and a W / TEOS selectivity of 2.5 to 15. In the substrate polishing process of the present invention, tungsten is much better removed from the substrate at a removal rate> 1500 Å / min; preferably> 1,700 Â / min; and a W / TEOS selectivity of 7 to 8 and with a platinum speed of 80 revolutions per minute, a support speed of 81 revolutions per minute; a flow rate of chemical mechanical polishing composition of 125 ml / min, a nominal downward force of 21.4 kPa on a polishing machine of 200 mm; and, the mechanochemical polishing pad comprises a polyurethane polishing layer containing microparticles with polymeric hollow cores and a nonwoven sub-pad impregnated with polyurethane.
    Preferably, in the method of polishing a substrate of the present invention, the provided mechanochemical polishing composition comprises mixed colloidal abrasives of small average particle sizes in combination with large average particle sizes, and the method of polishing a substrate of the present invention preferably has a tungsten shrinkage rate of> 1900 Å / min; preferably> 2000 Â / min; even better, from> 2,040 Â / min; and W / TEOS selectivity> 11.
    The following examples are intended to illustrate the stamping inhibition performance of the mechanochemical polishing composition of the present invention on tungsten, the corrosion inhibiting performance of the chemical mechanical polishing composition of the present invention on tungsten and the W / TEOS selectivity of one or more embodiments of the present invention but do not intend to limit its field.
    Example 1
    Suspension formulations
    The chemical mechanical polishing compositions of this Example were prepared by combining the constituents in the quantities listed in Table 1 with the remainder being deionized water (DI) and by adjusting the pH of the compositions to the final pH listed in the Table 1 with 45% by mass potassium hydroxide.
    Table 1
    Polishing suspension no. Abrasive 1 (% by mass) Arginine 2 (PPm) Fe (NO 3 ) 3 (PPm) Malonic acid(Ppm) H 2 O 2 (% by mass) pH Witness 2362 1,320 2 2.5 PS-1 2 30 362 1,320 2 2.5 PS-2 2 150 362 1,320 2 2.5
    1 suspension of abrasive of zeta (-) potential KLEBOSOL ™ 1598-B25 manufactured by AZ Electronics Materials, available from The Dow Chemical Company; and 2 available from Sigma-Aldrich as L-arginine.
    Example 2
    Chemical mechanical polishing - Drawing performance of CMP arginine suspensions
    The polishing experiments were carried out on 200 mm blank wafers installed on an Applied Materials 200 mm MIRRA ™ polishing machine. The polishing shrinkage speed experiments were performed on 15 kA TEOS sheet wafers of 200 mm blanks from Novellus and on W, Ti, and TiN blank wafers available from WaferNet Inc ., Silicon Valley Microelectronics or SKW Associates, Inc. All polishing experiments were performed using an IC1010 ™ polyurethane polishing pad coupled with an SP2310 sub-pad (commercially available from Rohm and Haas Electronic Materials CMP Inc. ) with a typical down pressure of 21.4 kPa (3.1 psi), a flow rate of chemical mechanical polishing composition of 125 mL / min, a table rotation speed of 80 rpm and a rotation speed of 81 rpm support unless otherwise specified. A Kinik PDA33A-3 diamond pad conditioner (commercially available from Kinik Company) was used to prepare the polishing pad. The polishing pad was run in with the conditioner using a down force of 9.0 Ibs (4.1 kg) for 15 minutes and 7.0 Ibs (3.2 kg) for 15 minutes at 80 rpm ( platinum) / 36 rpm (conditioner). The ex-situ polishing pad was further conditioned before polishing using a downward force of 7 Ibs (3.2 kg) for 24 seconds. Stamping rates of W were determined using a KLA-Tencor RS100C metrology tool. The wafers had different characteristics of standard line widths as shown in Table 2.
    Table 2
    Polishing suspension no. 100 pm Stamped g o e (Â) 50 pm Stamping (Â) 10 pm Stamped 9 o e (Â) 9 pm Stamping (Â) 7 pm Stamping (Â) 0.25 pm Stamping (Â) Witness 1,600 1,500 772 298 491 182 PS-1 1,093 1,037 636 300 427 152 PS-2 1,173 1,045 519 86 219 86
    As represented by the polishing results, the two suspensions of the present invention generally exhibited a lowered drawing of the element of W in contrast to the control suspension which excluded arginine.
    Example 3
    W removal speed, TEOS and maximum polishing temperature of N, TEOS
    The polishing experiments were performed for the removal rates of W and TEOS practically as described in Example 2 using the same apparatus and parameters. TEOS shrinkage rates were determined by measuring the film thickness before and after polishing using a KLA-Tencor FX200 metrology tool. The withdrawal rates of W were determined using a KLA-Tencor RS100C metrology tool. The patties were from WaferNet Inc., or Silicon Valley Microelectronics. The results are shown in Table 3.
    Table 3
    Polishing suspension no. RR of W (Â / min) TEOS RR (Â / min) selectivityW / TEOS Temp. from W (° C) Temp. from TEOS (° C) Witness 1,887 193 9.8 36 33 PS-1 1,729 211 8.2 39 34 PS-2 1,572 210 7.5 40 33
    The chemical mechanical polishing compositions of arginine of the present invention exhibited a good RR of W greater than 1500 Å / min, a RR of TEOS greater than 200 Å / min and a good selectivity W / TEOS between 7 and 9.
    Example 4
    Suspension formulations
    The chemical mechanical polishing compositions of this Example were prepared by combining the constituents in the quantities listed in Tables 4-6 with the remainder being DI water and adjusting the pH of the compositions to the final pH listed in the Tables 4-6 with 45% by weight potassium hydroxide.
    Table 4
    Polishing suspension no. Abrasive 1 (% by mass) Arginine 2 (PPm) Fe (NO 3 ) 3 (PPm) Malonic acid(Ppm) h 2 o 2 (% by mass) pH Witness 2362 1,320 2 2.5 PS-3 2 50 362 1,320 2 2.5 PS-4 2 500 362 1,320 2 2.5
    1 suspension of abrasive of zeta (-) potential KLEBOSOL ™ 1598-B25 manufactured by AZ Electronics Materials, available from The Dow Chemical Company;
    and 2 available from Sigma-Aldrich as L-Arginine.
    Table 5
    Polishing suspension no. Abrasive 1 (% by mass) Arginine HCl 3 (ppm) Fe (NO 3 ) 3 (PPm) Malonic acid(Ppm) h 2 o 2 (% by mass) pH Witness 2362 1,320 2 2.5 PS-5 2 50 362 1,320 2 2.5 PS-6 2 500 362 1,320 2 2.5
    1 suspension of abrasive of zeta (-) potential KLEBOSOL ™ 1598-B25 manufactured by AZ Electronics Materials, available from The Dow Chemical Company; and 3 available from Sigma-Aldrich as L-Arginine hydrochloride.
    Table 6
    Polishing suspension no. Abrasive 1 (% by mass) Nmethylarginine acetate 4 (ppm) Fe (NO 3 ) 3 (PPm) Malonic acid (PPm) H 2 O 2 (% by mass) pH Witness 2362 1,320 2 2.5 PS-7 2 50 362 1,320 2 2.5 PS-8 2 500 362 1,320 2 2.5
    1 suspension of abrasive of zeta (-) potential KLEBOSOL ™ 1598-B25 manufactured by AZ Electronics Materials, available from The Dow Chemical Company; and 4 available from Sigma-Aldrich as N-methyl-L-arginine acetate.
    Example 5
    Corrosion rate inhibition performance of CMP arginine suspensions
    Corrosion tests were carried out by immersing wafers of W blanks (1 cm x 4 cm) in 15 g suspension samples. The W pancakes were removed from the tested suspensions after 10 min. The solutions were then centrifuged for 20 min at 9,000 rpm to remove the suspension particles. The supernatant was analyzed by ICP-OES to determine the amount of tungsten by mass. The corrosion rate (Â / min) was converted from the mass of W assuming a specific surface for pickling of wafers of 4 cm 2 . The results of the corrosion tests are shown in Table 7.
    Table 7
    Suspension number Corrosion rate of W (Â / min) Witness 33 PS-3 10 PS-4 2.7 PS-5 10 PS-6 3.2 PS-7 14 PS-8 9
    The results of the corrosion rate tests showed that the chemical mechanical polishing suspensions containing L-arginine, L-arginine hydrochloride and N-methyl-L-arginine acetate significantly reduced the corrosion of W on slabs unlike the witness which excluded arginine and its salts.
    Example 6
    Suspension formulations with mixed and non-mixed abrasives
    The chemical mechanical polishing compositions of this Example were prepared by combining the constituents in the quantities listed in the tables below with the remainder being DI water and by adjusting the pH of the compositions to the final pH = 2.5 with 45 wt% potassium hydroxide, nitric acid, or mixtures thereof.
    Table 8
    Polishing suspension no. Abrasive 1 small diameter (% by mass) Abrasive 2 large diameter (% by mass) Arginine 3 (PPm) Fe (NO 3 ) 3 (PPm) Malonic acid(Ppm) H 2 O 2 (% by mass) Witness 1 230 362 1,320 2 Witness 22 30 362 1,320 2
    1 suspension of abrasive with zeta potential (-) KLEBOSOL ™ 1598-B25 manufactured by AZ Electronics average particle size = 45 nm.
    2 Suspension of abrasive with zeta potential (-) KLEBOSOL ™ 1498-B50 manufactured by AZ Electronics average particle size = 76 nm Materials available from The Dow Chemical Company; and 3 available from Sigma-Aldrich as L-Arginine
    Table 9
    Polishing suspension no. Abrasive 1 small diameter (% by mass) Abrasive 2 large diameter (% by mass) Arginine 3 (PPm) Fe (NO 3 ) 3 (PPm) Malonic acid (PPm) h 2 o 2 (% by mass) Average particle size (nm) PS-9 1.5 0.5 50 362 1,320 2 61 PS-10 1.0 1.0 50 362 1,320 2 68 PS-11 0.5 1.5 50 362 1,320 2 73
    1 suspension of abrasive with zeta potential (-) KLEBOSOL ™ 1598-B25 manufactured by AZ Electronics average particle size = 45 nm.
    2 Suspension of potential abrasive (-) KLEBOSOL ™ 1498-B50 manufactured by AZ Electronics average particle size = 76 nm
    Materials available from The Down Chemical Company; and 3 available from Sigma-Aldrich as L-Arginine
    Example 7
    W / TEOS selectivity of mixed versus non-mixed abrasives
    The polishing experiments were carried out on 200 mm blanks installed on an Applied Materials 200 mm Mirra® polishing machine. The polishing shrinkage speed experiments were carried out on wafers of tetraethyl ortosilicate (TEOS) sheets of thickness 15 k of 200 mm blanks from wafers of tungsten (W) Novellus plus blanks, all available. at Wafernet. All polishing experiments were performed using an IC1010 ™ polyurethane polishing pad coupled to an SP2310 sub-pad (commercially available from Rohm and Haas Electronic Materials CMP Inc.) with a typical down pressure of 21.4 kPa (3.1 psi), a flow rate of mechanochemical polishing composition of 125 mL / min, a table rotation speed of 80 rpm and a support rotation speed of 81 rpm unless otherwise indicated. A Kinik PDA33A-3 diamond pad conditioner (commercially available from Kinik) was used to prepare the polishing pad. The polishing pad was run in with the conditioner using a down force of 9.0 Ibs (4.1 kg) for 15 minutes and 7.0 Ibs (3.2 kg) for 15 minutes at 80 rpm ( platinum) / 36 rpm (conditioner). The ex-situ polishing pad was further conditioned before polishing using a downward force of 7 Ibs (3.2 kg) for 24 seconds. TEOS removal rates were determined by measuring the film thickness before and after polishing using a KLA-Tencor FX200 metrology tool. The tungsten withdrawal rates (W) were determined using a KLA-Tencor RS100C metrology tool.
    Table 10
    Polishing suspension no. VR deW (Â / min) TEOS VR (Â / min) selectivityW / TEOS Temp. from W (° C) TEOS temp(° C) Witness 1 1,729 211 8.2 42 38 Witness 2 2,347 261 9.0 45 40 PS-9 2,044 172 11.9 44 36 PS-10 2,019 172 11.8 44 37 PS-11 1,954 176 11.1 44 37
    The chemical mechanical arginine polishing compositions of the present invention with mixed abrasives (average particle sizes = 61 nm, 68 nm and 73 nm, respectively) exhibited good VR of W greater than 1900 Å / min, and an improved W / TEOS selectivity greater than 11, in contrast to arginine mechanochemical polishing compositions which included a small medium particle size abrasive (45 nm) or a large medium particle size abrasive (76 nm).
    权利要求:
    Claims (8)
    [1" id="c-fr-0001]
    1. Process for the chemical mechanical polishing of tungsten, comprising:
    providing a substrate comprising tungsten and a dielectric, wherein the tungsten elements have dimensions of 100 µm or less;
    the supply of a chemical mechanical polishing composition, comprising, as initial constituents:
    some water ;
    an oxidizing agent;
    arginine or a salt thereof in amounts of 10 to 500 ppm;
    a colloidal silica abrasive;
    a dicarboxylic acid or a salt thereof;
    a source of iron (III) ions; and, optionally, a pH adjusting agent;
    optionally, a surfactant;
    possibly a biocide;
    the provision of a chemical mechanical polishing pad, having a polishing surface;
    creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and distributing the chemical mechanical polishing composition over the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate to remove at least a certain amount of the tungsten and reduce the drawing of tungsten elements.
    [2" id="c-fr-0002]
    2. Method according to claim 1, characterized in that the colloidal silica abrasive has a negative zeta potential.
    [3" id="c-fr-0003]
    3. Method according to claim 1 or 2, characterized in that the chemical mechanical polishing composition provided comprises, as initial constituents:
    the water ;
    from 0.01 to 10% by mass of the oxidizing agent, where the oxidizing agent is hydrogen peroxide, from 30 to 500 ppm of arginine or a salt thereof;
    from 0.01 to 15% by mass of the colloidal silica abrasive;
    from 1 to 2,600 ppm of dicarboxylic acid or a salt thereof;
    from 100 to 1100 ppm of the source of iron (III) ions, where the source of iron (III) ions is ferric nitrate; and, optionally, the pH adjusting agent; optionally, the surfactant;
    possibly the biocide; and, characterized in that the mechanochemical polishing composition has a pH of 1 to 7.
    [4" id="c-fr-0004]
    4. Method according to claim 1 or 2, characterized in that the chemical mechanical polishing composition provided comprises, as initial constituents:
    the water ;
    0.1 to 5% by mass of the oxidizing agent, where the oxidizing agent is hydrogen peroxide;
    from 30 to 250 ppm of arginine or a salt thereof;
    from 0.05 to 10% by mass of the colloidal silica abrasive;
    from 100 to 1,400 ppm of dicarboxylic acid or a salt thereof;
    150 to 1,000 ppm of the source of iron (III) ions; where the source of iron (III) ions is ferric nitrate; and, optionally, the pH adjusting agent; optionally, an anionic ether sulfate surfactant;
    and in that the chemical mechanical polishing composition has a pH of 1.5 to 4.5.
    [5" id="c-fr-0005]
    5. Method according to claim 1 or 2, characterized in that the chemical mechanical polishing composition provided comprises, as initial constituents:
    the water ;
    from 0.1 to 3% by mass of the oxidizing agent, where the oxidizing agent is hydrogen peroxide;
    from 30 to 250 ppm of arginine or a salt thereof; 0.1 to 5% by mass of the colloidal silica abrasive;
    from 120 to 1,350 ppm of the dicarboxylic acid or a salt thereof, where the dicarboxylic acid is malonic acid;
    from 150 to 850 ppm of the source of iron (III) ions, where the source of iron (III) ions is ferric nitrate; and, optionally, the pH adjusting agent;
    optionally, an anionic ether sulfate surfactant; and in that the chemical mechanical polishing composition has a pH of 1.5 to 3.5.
    [6" id="c-fr-0006]
    6. Method according to any one of claims 1 to 5, characterized in that the chemical mechanical polishing composition provided has a tungsten removal speed of> 1,500 Â / min with a platinum speed of 80 revolutions per minute , a support speed of 81 revolutions per minute, a flow rate of chemical mechanical polishing composition of 125 ml / min, a nominal downward force of 21.4 kPa on a polishing machine of 200 mm; and in that the chemical mechanical polishing pad comprises a polyurethane polishing layer containing microparticles with hollow polymer cores and a nonwoven sub-pad impregnated with polyurethane.
    [7" id="c-fr-0007]
    7. Method according to claim 5, characterized in that the colloidal silica abrasive is a mixed colloidal silica abrasive comprising particles of small average sizes in combination with particles of large average sizes.
    [8" id="c-fr-0008]
    8. Method according to claim 7, characterized in that the colloidal silica abrasive comprises particles of small average size of 40-50 nm and particles of large average size of 70-100 nm.
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    同族专利:
    公开号 | 公开日
    US10600655B2|2020-03-24|
    CN109382756A|2019-02-26|
    US20190051537A1|2019-02-14|
    TW201910457A|2019-03-16|
    DE102018006078A1|2019-02-14|
    JP2019036714A|2019-03-07|
    KR20190017648A|2019-02-20|
    CN109382756B|2021-07-30|
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    法律状态:
    2020-07-15| PLFP| Fee payment|Year of fee payment: 3 |
    2021-07-14| PLFP| Fee payment|Year of fee payment: 4 |
    2021-11-05| PLSC| Publication of the preliminary search report|Effective date: 20211105 |
    优先权:
    申请号 | 申请日 | 专利标题
    US201762543416P| true| 2017-08-10|2017-08-10|
    US62543416|2017-08-10|
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