• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Integrated electronic circuit comprising a semiconductor substrate (1) comprising a semiconductor box (2) isolated from the rest of the substrate (1) by at least one semiconductor region (3) made at least partly under the semiconductor box conductor (2), and comprising a device (DIS) for detecting a thinning of the substrate (1) by its rear face comprising a vertical transistor (TR2), polarization means of the vertical transistor, and comparison means (5). ) coupled to the vertical transistor (TR2) and configured to generate a signal (RST) having a first value if the value of the current flowing through the vertical transistor (TR2) is greater than or equal to a threshold value, and a second value if the value of the Current flowing through the vertical transistor (TR2) is below the threshold value.
    公开号:FR3069954A1
    申请号:FR1757372
    申请日:2017-08-01
    公开日:2019-02-08
    发明作者:Abderrezak Marzaki；Christian Rivero；Quentin HUBERT
    申请人:STMicroelectronics Rousset SAS；
    IPC主号:
    专利说明:

    Method for detecting a thinning of the substrate of an integrated circuit by its rear face, and associated integrated circuit.
    Embodiments and embodiments of the invention relate to integrated circuits, and more particularly the detection of any thinning of the substrate of an integrated circuit from its rear face.
    Integrated circuits, in particular those equipped with memories containing sensitive information, must be protected as much as possible against attacks, in particular intended to discover stored data.
    A possible attack can be carried out from the rear side of an integrated circuit, using a laser beam.
    The effectiveness of such an attack increases when the substrate of the integrated circuit is thinned by the attacker from its rear face so as to be as close as possible to the components of the integrated circuit, produced at its front face. The thinning of the rear face of the integrated circuit can be done for example, using a focused ion beam (FIB, Focus Ion Beam) and / or using a polishing / abrasion step. .
    There are means for detecting a thinning of the substrate by its rear face. However, these means sometimes have a low integration rate, and can sometimes disrupt the operation of the components located nearby.
    These existing means can for example implement a variation of a resistance with the thinning of the substrate. That said, this type of solution can be a source of errors, especially for integrated circuits whose temperature can vary, varying the value of the resistance even in the absence of thinning.
    According to one embodiment, an integrated circuit is proposed comprising means for detecting a thinning of the substrate by its rear face, having a high integration rate, with a very low false trigger rate.
    According to one aspect, a method is proposed for detecting a possible thinning of a semiconductor substrate of an integrated circuit from its rear face, the substrate comprising a semiconductor well isolated from the rest of the substrate by at least one semiconductor layer. buried at least partly under the semiconductor well, the method comprising making, in the semiconductor well, a vertical MOS transistor comprising a first semiconductor electrode region located at the front face of the substrate, an isolated vertical gate region extending between the first electrode semiconductor region and the buried semiconductor layer including a second electrode semiconductor region of the vertical transistor, and a bias of the vertical transistor corresponding to a passing state of the transistor, a comparison of the current delivered by one of the semiconductor regions of elect vertical transistor trode with a threshold value and a generation of a control signal having a first value corresponding to a detection of a non-thinning of the substrate if the value of said current is greater than the threshold value, and having a second corresponding value detecting a thinning of the substrate if the current value is less than the threshold value.
    The semiconductor well may include at least a first MOS transistor having a common electrode semiconductor region with said first electrode solid semiconductor region of the vertical transistor, the method further comprising after detecting non-thinning of the substrate, deactivation of the comparison of the value of said current with said threshold value.
    According to another aspect, an integrated electronic circuit is proposed comprising a semiconductor substrate of a first type of conductivity comprising a semiconductor box isolated from the rest of the substrate by at least one buried semiconductor layer of a second type opposite conductivity to the first type of conductivity carried out at least in part under the semiconductor box
    The electronic circuit includes a device for detecting a thinning of the substrate by its rear face comprising
    a vertical MOS transistor comprising a first electrode semiconductor region located at the front face of the substrate, an isolated vertical gate region extending between the first electrode semiconductor region and the buried semiconductor layer including a second semiconductor electrode region of the vertical transistor,
    means for biasing the vertical transistor configured to, in a first configuration, apply biasings to the vertical transistor corresponding to a passing state of this transistor, and
    - comparison means coupled to one of said semiconductor electrode region of the vertical transistor and configured to compare the current delivered by said semiconductor electrode region of the vertical transistor with a threshold value and to generate a signal control having a first value corresponding to a detection of a non-thinning of the substrate if the value of said current is greater than the threshold value, and having a second value corresponding to a detection of a thinning of the substrate if the value of current is lower at the threshold value.
    In other words, the integrated circuit includes a vertical transistor which extends in the box, and through which a current can flow. A thinning of the rear face of the substrate damages the vertical transistor, thus preventing the current from flowing through the transistor.
    It is therefore thus possible to reliably detect, by reducing the surface area of the detection device, if a thinning of the substrate has taken place.
    According to one embodiment, the comparison means are electrically coupled to the first electrode semiconductor region of the vertical transistor, and are configured to compare the current delivered by said first electrode semiconductor region of the vertical transistor with said threshold value.
    According to another possible embodiment, the comparison means are electrically coupled to the second electrode semiconductor region of the vertical transistor, and are configured to compare the current delivered by said second electrode semiconductor region of the vertical transistor with said threshold value .
    The semiconductor box can comprise at least a first MOS transistor comprising a semiconductor electrode region common with said first semiconductor electrode region of the vertical transistor, the device possibly being in the first configuration in which the means for comparison are activated or in a second configuration in which the comparison means are deactivated, and the integrated circuit further comprises control means configured to switch the device from its first configuration to its second configuration after detection of a non-thinning of the substrate.
    Thus, the vertical transistor can advantageously have two functions, namely a thinning detection function and a conventional vertical transistor function.
    Said common electrode semiconductor region can be devoid of contact and the biasing means can then be configured to, in the first configuration, apply bias on the vertical transistor corresponding to a passing state of this transistor.
    Thus, since the first transistor and the vertical transistor are connected in series, it is possible to dispense with making contact on the semiconductor region of the common electrode, which advantageously allows a gain in surface area and a simplification of the design of the integrated circuit.
    According to one embodiment, the integrated circuit comprises an isolated vertical electrode extending from the front face of the substrate to the buried semiconductor layer and comprising the gate region of the vertical transistor.
    Thus, the device can be produced by the simple addition to the box of an insulated vertical electrode and a buried semiconductor layer; it therefore has a very good integration rate, and reduced disturbances on the other components.
    According to one embodiment, the box is surrounded by an isolation trench, and the insulated vertical electrode extends partly through the isolation trench.
    The etching being faster through an isolation trench, this advantageously makes it possible to produce a deeper electrode, with equal etching time.
    According to another embodiment, the isolated vertical electrode extends only in the semiconductor box, and further comprises a semiconductor portion of the same type of conductivity as the buried semiconductor layer extending from the vertical electrode insulated up to the buried semiconductor layer.
    The semiconductor portion thus forms an extension of the buried semiconductor layer up to the isolated vertical electrode, and therefore allows the realization of the vertical transistor despite an electrode which does not extend to the semiconductor layer buried.
    Other advantages and characteristics of the invention will appear on examining the detailed description of modes of implementation and embodiments, in no way limiting, and the appended drawings in which:
    - Figures 1 to 5 illustrate modes of implementation and embodiment of the invention.
    FIG. 1 illustrates a top view of a portion of an integrated circuit CI, of which FIG. 2 is a sectional view along the section line II-II of FIG. 1.
    The integrated circuit CI comprises a semiconductor substrate 1 comprising a front face Fv and a rear face Fr and a device DIS for detecting a thinning of the substrate 1 by its rear face.
    The semiconductor substrate 1 here comprises a first semiconductor well 2 having a first type of conductivity, here a P-type conductivity, and electrically isolated from the rest of the substrate.
    A shallow isolation trench 6 (STI: "Shallow Trench Isolation" according to an English acronym commonly used by those skilled in the art), for example a trench comprising silicon oxide, is produced around the first caisson semiconductor 2, and a buried semiconductor layer 3 comprising a semiconductor material having a second type of conductivity opposite to the first type of conductivity, here silicon having an N-type conductivity, is produced under the first semiconductor box 2. This buried layer 3 is commonly known to those skilled in the art as "NISO layer".
    The shallow isolation trench 6 and the buried semiconductor layer 3 contribute to the isolation of the well 2 from the rest of the substrate.
    A second semiconductor box 30, of the same type of conductivity as that of the buried layer 3, here an N type conductivity, is produced next to the semiconductor box 2, and is separated from the first semiconductor box 2 by the isolation trench 6.
    This second semiconductor box 30, the upper part of which is here silicided, allows the production of a contact region Z3 produced on the front face Fv of the substrate. The contact point Z3 is coupled to polarization means MPL, of conventional structure, configured to polarize the semiconductor layer 3. During normal operation of the integrated circuit CI, the contact region Z3 is typically polarized at a voltage of circuit supply.
    A first NMOS TRI transistor is produced in and on the first well 2. The first TRI transistor is for example here a transistor forming part of a memory area of the integrated circuit CI, and participates in the storage of secure data.
    The first TRI transistor conventionally comprises a gate region G, or gate line, comprising for example polysilicon and which is produced on a thin insulating layer, for example a layer of silicon oxide.
    The first TRI transistor comprises a first semiconductor region of electrode D comprising a first portion of the first well 2 doped with the conductivity type opposite to that of the well 2, here of type N, here forming the drain of the first TRI transistor, and a second semiconductor region of electrode S comprising a second portion of the first well 2 doped with the conductivity type opposite to that of the well 2, here of type N, here forming the source of the first transistor TRI, produced on either side of grid region G.
    The polarization of the grid is obtained here by two contact points Zg placed on the silicided upper part of the grid line G.
    A plurality of drain contact sockets Zd on the upper siliconized portion of the first semiconductor region of electrode D, and a plurality of source contact sockets Zs on the upper siliconized portion of the second semiconductor region of electrode S, are in the same way as the contact points Zg, coupled to the polarization means and conventionally make it possible to independently polarize the gate, source, and drain regions within the framework of the conventional operation of the first TRI transistor.
    Several fictitious gate regions Gf are here produced on the front face Fv of the substrate, on either side of the gate region G of the first transistor TRI. These fictitious grids Gf are used to standardize certain layers of material during the deposition, photolithography, and etching steps, during the manufacturing process of the integrated circuit IC, and have no electrical role here.
    In order to verify if an attacker has not thinned the substrate by its rear face, for example in order to recover, during the operation of the integrated circuit CI, secure data such as for example encryption keys, the integrated circuit CI comprises a device DIS for detecting the thinning of the substrate 1 by its rear face Fr.
    The detection device DIS is for example configured in a first configuration in which it is activated during the initialization of the integrated circuit CI. If during the activation period of the DIS device no thinning is detected, the DIS device is placed in a second configuration in which it is deactivated and the integrated circuit starts according to its normal operation.
    The device DIS can also pass from the second configuration to the first configuration during the normal operation of the integrated circuit CI, for example during a period during which the first transistor TRI is not used for carrying out the operations of the integrated circuit CI, then return from the first configuration to the second configuration if no thinning is detected.
    MCM control means, for example a logic circuit, make it possible to place the device DIS in its first configuration or in its second configuration.
    If a thinning of the substrate is detected, an RST control signal is generated intended for a control unit (not shown) of the integrated circuit CI, and for example the secure data stored in the integrated circuit CI are erased and the integrated circuit CI resets.
    The DIS device comprises an insulated vertical electrode 4, produced in the semiconductor box 2, so as to extend from the front face Fv to the semiconductor layer 3.
    The vertical electrode 4 comprises a trench comprising an insulating wall 40, for example here silicon dioxide, and filled with a conductive material 41, for example here polysilicon.
    The vertical electrode 4 comprises an electrode contact region CT, coupled to the polarization means and making it possible to polarize the vertical electrode 4.
    In this example, the insulated vertical electrode 4 is made partially through the isolation trench 6, and partially through the semiconductor substrate 2.
    Making the vertical electrode through the isolation trench 6 advantageously makes it possible to make a deeper trench, and therefore a longer electrode. Indeed, the etching of the silicon oxide of the isolation trench 6 is faster than the etching of the silicon of the box. Thus, for an equal etching time, an etching will be deeper if it is carried out through an isolation trench.
    The DIS protection device includes a vertical transistor
    TR2.
    The isolated vertical electrode 4 here comprises the gate of the transistor TR2, the second electrode of the first transistor TRI forms the drain region of the vertical transistor TR2, and the semiconductor region 3 comprises the source region of the transistor TR2.
    The DIS device also includes a comparator 5, a first input E1 of which is electrically coupled to the semiconductor layer 3, and a second input E2 of which is configured to receive a reference current Iref, for example a current with an intensity of two nano amps.
    Comparator 5 has an output configured to deliver the control signal RST having a first value, for example a zero value, if a current arriving at the first input El has a value greater than or equal to the value of the reference current Iref arriving at its second input E2, and to deliver the control signal RST having a second value, for example a non-zero value, if the current arriving at the first input El has a value less than the reference current Iref arriving at the second input E2.
    When the comparator 5 is deactivated (second configuration of the DIS device), the semiconductor layer 3 is connected to ground, left floating or polarized at any voltage, and the isolated vertical electrode 4 is for example but not limited to the mass.
    During the operation of the DIS protection device (first configuration of the DIS device), the polarization means
    MPL are suitable for applying polarizations on the vertical transistor TR2 corresponding to a passing state of this transistor.
    Here, the polarization means MPL are adapted to couple the second electrode S of the first transistor, which here forms the drain or source region of the vertical transistor TR2, to ground and to polarize the semiconductor layer 3 to a first value , for example 1.2 volts.
    The isolated vertical electrode 4 is polarized at a second value, for example 3.5 volts, and the second input E2 of the comparator 5 receives the reference current Iref.
    Thus, the vertical transistor TR2 is biased by the biasing means MPL so that its gate-source voltage is greater than its threshold voltage, and a detection current Id flows in the semiconductor well 2 between the second electrode S and the semiconductor layer 3. For example here, the detection current Id has a value of ten micro-amps.
    Comparator 5, the first input of which receives the detection current Id, then delivers the control signal RST having for example a low value.
    On reception of the control signal RST having for example a low value, the control means MCM deactivate the device DIS and the integrated circuit starts its normal operation.
    It would also be possible to envisage a device without contacts on the second semiconductor region of electrode S of the first transistor TRI, and, during the operation of the device DIS, to couple the first semiconductor region of electrode D of the first TRI transistor to ground, and the buried semiconductor layer 3, the gate G of the first TRI transistor and the insulated vertical electrode 4 to the first value.
    Thus, the detection current Id would flow through the first transistor TRI and the vertical transistor TR2.
    It would be possible for the polarization means MPL to be adapted to polarize the second electrode S of the first transistor at the first value, which would then form the source region of the vertical transistor TR2, and to couple the semiconductor layer 3 to ground. which would then form the drain region of the vertical transistor TR2.
    Furthermore, it should be noted here that the voltage and current values are given for information only, and that the operation of the detection device is not limited to these values.
    And, as illustrated in FIG. 3, it would also be possible for the first input El of the comparator 5 to be coupled to the first semiconductor region of electrode D of the vertical transistor TR2. However, for the sake of simplification, the following description will be made in connection with the embodiment described above in connection with FIGS. 1 and 2.
    In order to be efficient, secure data recovery operations require the substrate to be as thin as possible, so that data recovery devices can be brought as close as possible to the components. Thus, the thinning of the substrate 1, for example by a focused ion beam, can extend as far as the well 2, beyond the semiconductor layer 3.
    FIG. 4 illustrates the integrated circuit CI, in which the substrate has been partially thinned. Following this thinning, the substrate 2 comprises a cavity 7 extending from the rear face Fr of the substrate, to the semiconductor box 2.
    The cavity 7 therefore passes through the semiconductor layer 3, and the coupling between the semiconductor layer 3 and the first input El of the comparator 5 is no longer ensured.
    As an indication, the cavity extends over an area of about twenty-five square micrometers, that is to say an area greater than the surface of the semiconductor layer 3 situated inside the insulation trench 6, which is here about nine square micrometers.
    Thus, even by polarizing the second electrode S, the isolated vertical electrode 4, and the semiconductor layer 3 so that the gate-source voltage of the vertical transistor TR2 is greater than its threshold voltage, the current arriving on the first input El of the comparator 5 is very low, and the value of the control signal RST generated by the comparator 5 is for example high.
    On receipt of the RST control signal having the value, for example high, the control unit of the integrated circuit can for example erase the secure data, and reset or shut down the integrated circuit CI.
    Thus, the integrated circuit CI is protected against attacks comprising a thinning of the substrate.
    In addition, the small dimensions of the isolated vertical electrode 4 advantageously allow a very good integration rate of the detection device.
    Furthermore, the inventors have observed that the variation in the threshold voltage of the first TRI transistor relative to its threshold voltage in the absence of the vertical electrode is less than three percent.
    Although an integrated circuit IC has been described here in which the insulated vertical electrode 4 extends through the isolation trench 6, it would be entirely possible, as illustrated in FIG. 5, to produce an insulated vertical electrode 4 which extends only in the semiconductor box 2, for example between the second electrode S and the isolation trench 6.
    In this case, the etching of the trench in which the vertical electrode 4 is produced is slower, and therefore extends less deeply into the substrate. In order to make contact between the vertical electrode 4 and the semiconductor layer 3, it is possible, prior to the production of the insulating wall 40, to carry out an implantation of the same type of conductivity as that of the semiconductor layer 3, here of type N, in the portion 8 of the box located between the vertical electrode 4 and the semiconductor layer 3.
    An extension of the vertical region is thus formed allowing electrical contact between the semiconductor layer 3 and the vertical electrode 4.
    Although a detection device comprising a vertical transistor TR2, the drain of which includes the source of the first transistor TRI, has been described in connection with FIGS. 1 to 5, it would be entirely possible to envisage a device DIS in which the the vertical electrode 4 is located on the other side of the gate G, and in which the drain or the source of the vertical transistor comprises the drain or the source of the first transistor TRI.
    And although it has been described a box 2 comprising only 5 the first TRI transistor, it is possible to produce a protection device produced in a box on which several transistors are made.
    It is also possible to produce a protection device common to several semiconductor boxes of the same conductivity.
    权利要求:
    Claims (10)
    [1" id="c-fr-0001]
    1. Method for detecting a possible thinning of a semiconductor substrate (1) of an integrated circuit (IC) from its rear face, the substrate (1) comprising a semiconductor box (2) isolated from the rest of the substrate (1) by at least one buried semiconductor layer (3) produced at least partially under the semiconductor well (2), the method comprising making a vertical MOS transistor in the semiconductor well (2) (TR2) comprising a first electrode semiconductor region (D) located at a front face (Fv) of the substrate, an isolated vertical gate region (4) extending between the first electrode semiconductor region (D) and the buried semiconductor layer (3) including a second semiconductor electrode region of the vertical transistor, and a bias of the vertical transistor (TR2) corresponding to a passing state of the transistor (TR2), a comparison of the current delivered by one e semiconductor electrode regions of the vertical transistor (TR2) with a threshold value and a generation of a control signal (RST) having a first value corresponding to a detection of a non-thinning of the substrate if the value of said current is greater than the threshold value, and having a second value corresponding to a detection of a thinning of the substrate if the value of the current is less than the threshold value.
    [2" id="c-fr-0002]
    2. Method according to claim 1, in which the semiconductor well (2) comprises at least a first MOS transistor (TRI) comprising a semiconductor electrode region common with said first semiconductor electrode region (D ) of the vertical transistor (TR2), the method further comprising after detection of a non-thinning of the substrate, deactivation of the comparison of the value of said current with said threshold value.
    [3" id="c-fr-0003]
    3. Integrated electronic circuit comprising a semiconductor substrate (1) comprising a semiconductor box (2) of a first type of conductivity isolated from the rest of the substrate (1) by at least one buried semiconductor layer (3) of a second type of conductivity opposite to the first type of conductivity, produced at least in part under the semiconductor box (2), and comprising a device (DIS) for detecting a thinning of the substrate (1) by its rear face, the device comprising
    - a vertical MOS transistor (TR2) comprising a first electrode semiconductor region (D) located at a front face (Fv) of the substrate, an isolated vertical gate region (4) extending between the first semiconductor electrode region (D) and the buried semiconductor layer (3) including a second electrode semiconductor region of the vertical transistor (TR2),
    polarization means configured to, in a first configuration, apply polarizations to the vertical transistor (TR2) corresponding to a passing state of this transistor, and
    - comparison means (5) coupled to one of said semiconductor electrode regions (D, 3) of the vertical transistor (TR2) and configured to compare the current delivered by said semiconductor region (D, 3) electrode (D, 3) of the vertical transistor (TR2) with a threshold value and for generating a control signal (RST) having a first value corresponding to a detection of a non-thinning of the substrate if the value of said current is greater at the threshold value, and having a second value corresponding to a detection of a thinning of the substrate if the current value is less than the threshold value.
    [4" id="c-fr-0004]
    4. The integrated circuit as claimed in claim 3, in which the comparison means are electrically coupled to the first electrode semiconductor region (D) of the vertical transistor (TR2), and are configured to compare the current delivered by said first region. semiconductor electrode (D) of the vertical transistor (TR2) with said threshold value.
    [5" id="c-fr-0005]
    5. The integrated circuit as claimed in claim 3, in which the comparison means are electrically coupled to the second electrode semiconductor region (3) of the vertical transistor (TR2), and are configured to compare the current delivered by said second region. semiconductor electrode (3) of the vertical transistor (TR2) with said threshold value.
    [6" id="c-fr-0006]
    6. Integrated circuit according to any one of claims 3 to 5, in which the semiconductor box (2) comprises at least a first MOS transistor (TRI) comprising a semiconductor region of electrode common with said first semi region conductive electrode (D) of the vertical transistor (TR2), the device (DIS) possibly being in the first configuration in which the comparison means (5) are activated or in a second configuration in which the comparison means (5 ) are deactivated, and the integrated circuit further comprises control means (MCM) configured to pass the device (DIS) from its first configuration to its second configuration after detection of a non-thinning of the substrate.
    [7" id="c-fr-0007]
    7. The integrated circuit according to claim 6 taken in combination with claim 5, wherein said common electrode semiconductor region (D) is devoid of contact, and the biasing means are configured to, in the first configuration, apply polarizations on the first vertical transistor (TRI) corresponding to a passing state of this transistor.
    [8" id="c-fr-0008]
    8. Integrated circuit according to one of claims 3 to 7, comprising an isolated vertical electrode (4) extending from the front face of the box to the buried semiconductor layer (3) and comprising the gate region of the vertical transistor (TR2).
    [9" id="c-fr-0009]
    9. The integrated circuit as claimed in claim 8, in which the box is surrounded by an isolation trench (4), and the insulated vertical electrode (4) extends partly through the isolation trench.
    [10" id="c-fr-0010]
    10. The integrated circuit as claimed in claim 8, in which the isolated vertical electrode (4) extends only in the semiconductor box, and further comprises a semiconductor portion (8) of the same type of conductivity as the layer. buried semiconductor (3) extending from the insulation trench (4) to the buried semiconductor layer (3).
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    法律状态:
    2019-02-08| PLSC| Search report ready|Effective date: 20190208 |
    2019-07-22| PLFP| Fee payment|Year of fee payment: 3 |
    2020-07-21| PLFP| Fee payment|Year of fee payment: 4 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1757372A|FR3069954B1|2017-08-01|2017-08-01|METHOD FOR DETECTING A THINNING OF THE SUBSTRATE OF AN INTEGRATED CIRCUIT THROUGH ITS REAR SIDE, AND ASSOCIATED INTEGRATED CIRCUIT|
    FR1757372|2017-08-01|FR1757372A| FR3069954B1|2017-08-01|2017-08-01|METHOD FOR DETECTING A THINNING OF THE SUBSTRATE OF AN INTEGRATED CIRCUIT THROUGH ITS REAR SIDE, AND ASSOCIATED INTEGRATED CIRCUIT|
    CN201821195840.8U| CN208706619U|2017-08-01|2018-07-26|Integrated electronic circuit|
    CN201810833714.9A| CN109326563A|2017-08-01|2018-07-26|Detect the method and integrated circuit related with same that the substrate of integrated circuit is thinned from back side|
    US16/051,680| US10770409B2|2017-08-01|2018-08-01|Method for detecting thinning of the substrate of an integrated circuit from its back side, and associated integrated circuit|
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