• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
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  • 优先权
    • 专利摘要:
    The invention relates to a method and apparatus for the detection of underwater noise. An embodiment of the apparatus includes a substrate (150) with a vacuum sealed cavity (140). A support structure (130) and an acoustic pressure sensor are located on the substrate (150). The support structure (130) of the apparatus may include a first oxide layer (130b) on the substrate (150), a silicon layer (130c) on the first oxide layer (130b), and a second oxide layer (130a) located on the silicon layer (130c). The acoustic pressure sensor of the apparatus includes a first electrode layer (110c) on the substrate (150), a piezoelectric layer (110b) on the first electrode layer (110c), and a second electrode layer (110c). electrode (110a) located on the piezoelectric layer (110b).
    公开号:FR3066833A1
    申请号:FR1854318
    申请日:2018-05-23
    公开日:2018-11-30
    发明作者:Jinghui Xu；Julius Ming-Lin Tsai；Winston Sun；Chengliang Sun
    申请人:PGS Geophysical AS；Agency for Science Technology and Research Singapore；
    IPC主号:
    专利说明:

    This invention relates generally to piezoelectric electromechanical microsystem (MEMS) sensors, and more particularly, in certain embodiments, to a high performance piezoelectric MEMS hydrophone for detecting an underwater acoustic signal.
    Hydrophones are devices typically used to detect underwater noise. They are widely used, for example, in marine oil and gas detection systems, sonar systems, underwater communication systems and diving equipment, etc. For example, in marine seismic exploration, oil-containing formations can be located by generating acoustic source signals in a body of water, and by detecting acoustic signals that result, at least in part, from the source signals acoustics that interact with soil formations under the body of water. Many hydrophones include piezoelectric materials which, when deformed by the sound pressure of a sound wave, produce electricity. Electrodes can be used to detect the electricity generated, and the higher the applied sound pressure, the greater the induced charge. In many cases, good low frequency performance is desired from hydrophones (ranging from several Hz to several kHz) due to a large transmission loss and the short transmission distance of high frequency signals in water. In addition, a large dynamic range, low acoustic impedance, and good linearity are also desirable design criteria for a hydrophone.
    In order to meet these performance requirements and these design criteria, the present invention provides, in a first aspect, an apparatus, which can be a hydrophone, comprising a substrate which comprises a vacuum-sealed cavity, a support structure located on the substrate, and an acoustic pressure sensor located on the substrate.
    The support structure may include a first oxide layer located on the substrate, a silicon layer located on the first oxide layer, and a second oxide layer located on the silicon layer. The sound pressure sensor may include a first electrode layer located on the substrate, a piezoelectric layer located on the first electrode layer, and a second electrode layer located on the piezoelectric layer, the apparatus being configurable to measure an acoustic wave received at the pressure sensor.
    Part of the support structure can form a boundary of the vacuum sealed cavity. The vacuum sealed cavity can be completely delimited by the substrate. A thickness of the support structure can be at least 4 µm greater than a thickness of the piezoelectric layer. A surface of the second electrode layer can be between 70 and 90 percent of an area of the piezoelectric layer.
    In a second aspect, the present invention provides a method which includes measuring a pressure of an acoustic signal received at a sensor of a device located in a body of water, the device comprising a support structure located between a vacuum sealed cavity and the sensor. The sensor may include an upper electrode layer and a piezoelectric layer, and an area of the upper electrode layer may be 70 to 90 percent of an area of the piezoelectric layer. The acoustic signal can result from an acoustic source signal which interacts with a soil formation under the body of water.
    Finally, in a third aspect, the present invention provides an apparatus which comprises a plurality of hydrophones configured to perform an underwater acoustic signal detection, at least one hydrophone of the plurality of hydrophones comprising a vacuum sealed cavity sized for reduce Brownian noise in the device. The at least one hydrophone may include a sensor and a support structure, the sensor being configured to receive an acoustic signal, and the support structure comprising a first dielectric layer. The support structure may include the first dielectric layer located on a substrate, a silicon layer located on the first dielectric layer, and a second dielectric layer located on the silicon layer, the second dielectric layer being in contact with the sensor. The vacuum sealed cavity can be delimited by the substrate and a dielectric layer. The vacuum sealed cavity can be completely delimited by the substrate. The plurality of hydrophones can be arranged in a grid having a plurality of rows and a plurality of columns, the plurality of hydrophones generating an accumulated charge sufficient to be detected by a preamplifier. A thickness of the support structure can be greater than a thickness of the sensor by 4 µm or more. The sensor may include a first electrode layer in contact with the support structure, a piezoelectric layer in contact with the first electrode layer and a second electrode layer in contact with the piezoelectric layer. An area of the second electrode layer can make 70 to 90 percent of an area of the piezoelectric layer.
    Figure 1 is an exemplary embodiment of a hydrophone;
    Figure 2 is a diagram illustrating the relationship between an example damping coefficient and the depth of a vacuum sealed cavity of an example hydrophone;
    Figure 3 illustrates a detailed sectional view of the detection structure of an embodiment of the hydrophone;
    Figures 4A and 4B are diagrams illustrating the relationship between charge sensitivity and the radius ratio between an upper electrode and an adjacent piezoelectric layer of an embodiment of a hydrophone;
    FIG. 5 illustrates a possible arrangement of the hydrophones arranged in a grid; and
    FIGS. 6A to 6J illustrate a flow of example process for the manufacture of a hydrophone.
    Turning now to Figure 1, an exemplary embodiment of an electromechanical microsystem hydrophone (MEMS) is shown there. As used herein, the term "MEMS" refers to a technology for miniaturized mechanical and electromechanical elements which are fabricated using modified techniques for manufacturing semiconductor devices. A MEMS device, in one embodiment, can be made of components between about 1 µm and 1 mm in size. The functional elements of MEMS can include structures, sensors, actuators, microelectronics, etc. miniaturized.
    As illustrated, the apparatus 100 includes a plurality of layers 110 and 130 disposed on a substrate 150. The apparatus 100, in one embodiment, is a hydrophone; in another embodiment, the apparatus 100 includes a hydrophone. In one embodiment, a cavity 140 is disposed between the substrate 150 and the support structure layer 130; a layer of detection structure 110 is disposed on the support structure layer 130.
    As shown, in one embodiment, the detection structure layer 110 includes an upper electrode layer 110a, a lower electrode layer 110c, and a piezoelectric layer 110b located between the two electrode layers 110a and 110c. The term "piezoelectric" has its usual and accepted meaning in the art, including a type of material which, when deformed, generates electricity. In one embodiment, the piezoelectric layer 110b can be fabricated using aluminum nitride (AIN) to create a piezoelectric layer of AlN. In different embodiments, the piezoelectric layer 110b can be of any piezoelectric material which generates electricity when subjected to an applied force or stress. Such a piezoelectric material can convert a sound signal into an electrical signal because the sound waves generate an acoustic pressure. The sound pressure associated with a sound wave can be caused by the local pressure deviation from the average atmospheric pressure caused by the sound wave. The apparatus 100 can thus be used to measure the sound pressure in water.
    In different embodiments, when an acoustic pressure 120 causes the piezoelectric layer 110b to deform, the electrode layers 110a and 110c can be used to collect the electricity generated. In one embodiment, the electrode layers 110a and 110c are placed such that they are arranged on top and bottom of the layers of piezoelectric material 110b; in this way, the electrode layers 110a and 110c are placed so that a maximum charge can be collected from the piezoelectric layer 110b. In some embodiments, the electrode layers 110a and 110c can be fabricated using any type of conductor. For example, a conductor can be made of metal such as aluminum, highly doped silicon, a refractory metal such as tungsten, a silicide, or any other type of conductive material, etc. The electrode layers can use any variety of materials having the properties of a conductor.
    Below the detection layer 110, in different embodiments, a support structure layer 130 is implemented to stabilize the sensitivity of the apparatus 100. As discussed in more detail below, in different Embodiments, the piezoelectric layer 110 is formed by high temperature deposition. Due to the high temperature deposition, a residual stress is induced in the deposited material. As used herein, the term "residual stress" has its usual and accepted meaning in the art, including constraints that remain after an initial cause of the stress (e.g. external forces, a thermal gradient) has been removed. In certain embodiments, due to the support layer 130 which is dimensioned to be larger than the piezoelectric layer 110b, the residual stress in the piezoelectric layer 110b has a minimal effect on the sensitivity of the device 100. Thus, in different embodiments, the support structure layer 130 is dimensioned to be larger than the piezoelectric layer 110b. In some embodiments, for example, the support structure layer 130 is dimensioned to be approximately 6 µm thick while the piezoelectric layer 110b is dimensioned to be approximately 0.8 µm thick. In different embodiments, the thickness of a support structure layer 130 may be at least about 4 µm greater than a thickness of a piezoelectric layer 110b. In different embodiments, the support structure layer 130 may be larger than about 5 µm thick while the piezoelectric layer 110b may be larger than about 0.4 µm thick.
    In different embodiments, the support structure layer 130 may include an upper dielectric layer 130a, a silicon layer 130c, and a lower dielectric layer 130b. The dielectric layers 130a and 130b can be any dielectric, for example, silica (SiO2), which can be used in the dielectric layer 130a in order to avoid a charge leakage from the electrode layer 110c. As used herein, the term "dielectric" has its usual and accepted meaning in the art, which includes a material which acts as an electrical insulator. In a dielectric, electrical charges move only slightly from their average equilibrium positions when an electric field is applied. Thus, electrical charges do not flow through the dielectric material as they do in a conductor. Thus, the dielectric layer 130a can be used as an insulator so that the charge collected in the electrode layer 110c does not leak into the support structure layer 130. In different embodiments, the lower dielectric layer 130b completely delimits the top of the vacuum sealed cavity 140, and is thus used to create this cavity (for example by fusion bonding). An example illustration of a manufacturing process which is used to manufacture the apparatus 100 is discussed further below in connection with Figures 6A to 6J. It should be noted that the support structure layer 130 is not limited to the components illustrated. In different embodiments, the support structure layer 130 may comprise different more or less numerous layers. For example, in some embodiments, the support structure layer 130 may include two dielectric layers, one dielectric layer or no dielectric layers. The support structure layer 130 may also include a single layer comprising silicon or any other material which can provide sufficient structural support to minimize the residual stress that remains in the piezoelectric layer 110b after a high temperature deposition process .
    Below the support structure layer 130, in one embodiment, is a substrate 150. As shown, the substrate 150 is formed to form a vacuum sealed cavity 140 when placed in contact with the support structure layer 130. As used herein, the term "substrate" has its usual and accepted meaning in the art, which includes the physical material on which a microdevice or a semiconductor device is placed. In different embodiments, the substrate 150 is a washer (i.e., a thin wafer of semiconductor material) used in the manufacture of microdevices. In different embodiments, the substrate 150 is a silicon washer. In other embodiments, the substrate 150 is a silicon washer on an insulator (SOI). For example, in some embodiments, the SOI washer may have a device layer that is about 4 µm deep and a layer of embedded oxide that is about 1 µm deep.
    In the illustrated embodiment, the vacuum sealed cavity 140 is located in the substrate 150. Among a variety of factors that can reduce the sensitivity of the hydrophone apparatus 100, two of these factors are acoustic impedance and noise . One type of noise is Brownian noise, which refers to noise produced by Brownian motion. Brownian motion is generally considered to be the supposedly random motion of particles suspended in a liquid or gas which results from their bombardment by atoms or molecules moving rapidly in the liquid or gas. In one embodiment, the vacuum sealed cavity 140 is used to reduce Brownian noise, that is, Brownian noise inside the apparatus 100. In some embodiments, when the layer of detection structure 110 vibrates due to an acoustic pressure 120 which is applied, Brownian noise may result therefrom and be detected by the apparatus 100. Consequently, in certain embodiments, the use of the vacuum-sealed cavity 140 can minimize Brownian noise inside the apparatus 100. The vacuum sealed cavity 140 can also be used to reduce the acoustic impedance and thereby stabilize the sensitivity of the hydrophone apparatus 100.
    More specifically, the Brownian noise which can be associated with and result from the reduced sensitivity of the apparatus 100 can be represented by the following equation:
    NoiseMEMS = y} 4kBTD / S
    In this equation, kB is the Boltzmann constant (1.381 x 10 ~ 23 J / K); T represents the ambient temperature in K. D represents the damping coefficient in N / (m / s), and S represents the area of a hydrophone diaphragm surface in m2. In vibration mechanics, damping is an effect (i.e. a damping force) which reduces the amplitude of oscillations in an oscillating system, and this effect is linearly related to the speed of the oscillations. . The damping coefficient is generally defined as the ratio between the damping force and the oscillation speed. As can be seen from this equation, the smaller the value of the damping coefficient, the smaller the value of NoiseMEMS. In certain embodiments, this damping coefficient can be linked to the damping effect of the gas which can be very significant in certain cases. In certain embodiments, the fluid in the cavity can include different types of gas such as rarefied air. Damping can occur from acoustic radiation in the air. This damping effect is one of a variety of mechanisms that can limit the sensitivity of the device 100.
    Thus, in certain embodiments, the value of NoiseMEMS can be controlled by controlling the damping coefficient. In some embodiments, this effect can be achieved by changing the depth and the vacuum level of the vacuum sealed cavity 140. For example, we can reduce the damping coefficient by increasing the depth or decreasing the vacuum level of the cavity. Alternatively, in other embodiments, the damping coefficient is controlled by changing the vacuum pressure inside the vacuum sealed cavity 140. As should be appreciated by those skilled in the art with the The advantage of this disclosure is that when the cavity pressure decreases (i.e., the vacuum level increases), the damping coefficient (D) decreases. Thus, when the vacuum level in the vacuum sealed cavity 140 is increased, the Brownian noise decreases.
    The vacuum sealed cavity 140 can also be effective in keeping the acoustic impedance stable. The acoustic impedance indicates how much acoustic pressure is generated by the vibration of the molecules of a particular acoustic medium at a given frequency. Some hydrophones that do not have a vacuum sealed cavity may experience an increase in rear acoustic impedance when a hydrophone is placed deeper in the ocean. Increasing the rear acoustic impedance can result in decreased sensitivity. In one embodiment, the acoustic impedance in the vacuum sealed cavity 140 is directly correlated to the density of the air in the cavity 140 and an acoustic speed. Because the air density and the acoustic velocity both remain almost unchanged in a sealed cavity, the acoustic impedance of the cavity is maintained at a stable level regardless of the depth of the hydrophone. Thus, in some embodiments, the vacuum sealed cavity 140 is effective in keeping the acoustic impedance stable, as well as in reducing noise
    Brownian. In some embodiments, Brownian noise can be reduced to an insignificant level (eg, about 3.5 x 10 "7 Pa / VHz or less), regardless of the depth of the apparatus 100.
    Therefore, when the depth and pressure of the vacuum sealed cavity 140 is used to control the damping coefficient (D), in some embodiments, the vacuum sealed cavity 140 is calibrated so that it has a depth of about 2 µm and a pressure of about 0.1 hPa. In various embodiments, the vacuum sealed cavity 140 has a depth ranging from about 1 µm to 10 µm. In other embodiments, the vacuum pressure is between about 0.1 hPa and 10 hPa (e.g. 1 hPa).
    In some embodiments, the vacuum sealed cavity 140 is placed directly below the oxide layer 130b. The oxide layer 130b can thus form a boundary of the vacuum sealed cavity 140. In other embodiments, instead of the oxide layer 130b forming a boundary of the vacuum sealed cavity 140, the cavity vacuum sealed 140 may be completely delimited by substrate 150. For example, the upper limit of the vacuum sealed cavity 140 may be about 0.5 µm to 1 µm from the bottom of an oxide layer 130b. Simulated results representing a correlation between the depth of the vacuum sealed cavity 140 and the damping coefficient are shown in FIG. 2.
    Turning now to Figure 2, an example relationship between the damping coefficient (D) and the depth of the vacuum sealed cavity of an example hydrophone is shown there. As illustrated in diagram 200, the depth of the vacuum sealed cavity (eg cavity 140) is plotted along the horizontal axis. The damping coefficients calculated by simulations are plotted along the vertical axis using a base 10 logarithmic scale. The damping coefficients for three different levels of vacuum in a vacuum sealed cavity are shown. As can be seen, when the depth of cavity is increased, the resulting damping coefficient decreases. As should be appreciated by those skilled in the art with the benefit of this disclosure, the simulated results illustrate that a vacuum sealed cavity with a depth of 2 µm results in a damping coefficient which is low enough to allow the vacuum sealed cavity to maintain Brownian noise at an acceptable level. In one embodiment, a vacuum sealed cavity sized to have a depth of 2 µm can reduce the Brownian noise of a single hydrophone apparatus 100 to an acceptable level (eg only 5 x 10 ”7 Pa / VHz at 300K ).
    Returning to FIG. 1, as has been discussed previously, because the acoustic pressure interacts with the layer of detection structure 110, it causes the piezoelectric layer 110b to deform. The charge generated by the deformation of a layer 110b is collected at designated electrodes, such as the electrode layers 110a and 110c. In some embodiments, the electrode layer 110a is dimensioned relative to the piezoelectric layer 110b so that a maximum induced charge is obtained. This is discussed below in connection with Figure 3.
    Turning now to Figure 3, a detailed cross section of a detection structure 300 is shown. In some embodiments, the detection structure 300 is the same as the detection structure layer 110 discussed with reference to Figure 1 (for example, layers 310 to 330 correspond to layers 110a to 110c in Figure 1) . In different embodiments, the upper electrode layer 310 is dimensioned such that a maximum induced charge is obtained. As discussed previously in connection with Figure 1, these electrode layers can be made using any material which conducts electricity. In some embodiments, the electrode layers 310 and 330 can be made using any material which can act as an electrical conductor, and can be used to make contact with a non-metallic part of a device.
    In certain embodiments, a maximum induced charge is obtained by dimensioning the upper electrode layer 310 relative to the piezoelectric layer 320. As indicated in FIG. 3, distances 340 and 350 are shown. The distance 340 is indicative of half the width of an upper electrode layer 310 (FIG. 3 represents a width in section of the structure 300). Similarly, the distance 350 represents half the width of a piezoelectric layer 320. In different embodiments, the shape of the different electrodes, piezoelectric layers and different components of the detection structure can vary. For example, in one embodiment, the upper electrode layer can be implemented with a circular shape. In this case, the distance 340 represents the radius of an upper electrode layer 310. Similar comments apply to the distance 350 relative to the piezoelectric layer 320. In other embodiments, the layers of the structure 300 can be implemented with other shapes (for example quadrilaterals). In this case, the distances 340 and 350 represent half the width in section of these layers.
    In some embodiments, the difference in size between the different components of the detection structure can be described by the surface. For example, in a particular embodiment, a maximum induced charge is obtained by dimensioning the upper electrode layer 310 so that its surface is smaller than that of the surface of a piezoelectric layer 320. For example, in some embodiments, the top electrode is dimensioned such that the area of the top electrode layer 310 is between about 70 and 90 percent of the area of the piezoelectric layer 320 (i.e. surface ratio 310 to 320 between about 70 and 90 percent). In a particular embodiment, the area of an upper electrode layer 310 is approximately 77 percent of a piezoelectric layer 320 (i.e. within a range of plus or minus 1 percent around 77 percent). In a particular embodiment in which the different components are implemented in a circular shape, the distance 340 is approximately 88 percent of the distance 350. In another specific embodiment, the upper electrode layer 310 is sized so that the distance 340 is about 100 µm and the piezoelectric layer 320 is dimensioned so that the distance 350 is about 125 µm.
    The ranges disclosed are not limiting and are by way of example. The embodiment may use a range which includes part of the disclosed range or falls outside the range. For example, some embodiments may have an area ratio which is less than about 70 percent. Others may have an area ratio that is greater than about 90 percent.
    Turning now to FIG. 4A, the simulated results show the variation in charge sensitivity when the radius ratio between an upper example electrode and an adjacent piezoelectric layer is modified. The upper electrode and an adjacent piezoelectric layer may be the electrode layer 310 and the piezoelectric layer 320 as discussed with reference to Figure 3. As illustrated in diagram 400, the radius ratio is reported along the horizontal axis and the load sensitivity is reported along the vertical axis. Generally, a higher charge sensitivity is desired and is directly correlated to the amount of charge induced. As illustrated in diagram 400, at points 410, a maximum induced charge is obtained with the radius ratio of approximately 88 percent. In embodiments in which the sensing components are circular in shape, this radius ratio results in an area ratio of 77 percent. Thus, in different embodiments of a hydrophone, the respective layers in the detection structure can be dimensioned so that a maximum induced charge is achieved.
    Turning now to Figure 4B, diagram 450 shows the simulated results of the induced charge resulting from a dimensioned detection structure as discussed with reference to Figure 3. Diagram 450 explains the linear relationship approximate between a sound pressure, such as sound pressure 120 as discussed with reference to Figure 1, and the resulting induced load. The simulated sensitivity demonstrates a sensitivity of approximately 3.83 x 10-5 pC / Pa in the hydrophone 100 apparatus. As can be seen in diagram 450, the greater the amount of pressure that is applied to the hydrophone apparatus. hydrophone 100 is large, the greater the load measured. In some embodiments, the induced charge generated by a single hydrophone, however, may be insufficient to be detected by certain preamplifiers. In various embodiments, a preamplifier can be used to prepare weak electrical signals for further amplification or processing.
    Turning now to FIG. 5, an arrangement of the hydrophones in a grid 500 is shown there. Although the arrangement in Figure 5 is shown as a square, this arrangement can take any shape (e.g. circular, octagonal). This arrangement of hydrophones in a grid with a plurality of rows and columns allows an individual charge generated by each hydrophone 510 to be accumulated. The accumulated charge results in a sufficient amount of charge which can be detected by a preamplifier. As shown, hydrophones can be placed in a grid of three (3) by three (3) to form a 520 cell. In some embodiments, a grid of four (4) by four (4) hydrophones can be placed in a cell. The grid 500 is not limited to these illustrated dimensions; it may contain more or less elements different from those illustrated in FIG. 5. The design of the grid aims to improve the sensitivity of the hydrophone. Because the improved sensitivity is correlated to the sum of the charge of each cell, a number of hydrophones can be arranged in such a way that a desired level of sensitivity is acquired. In some embodiments, the grid 500 may contain a minimum number of hydrophones necessary to provide an accumulated amount of charge which is sufficient to meet the characteristics of a variety of preamplifiers which can be used to detect and amplify the charge.
    Turning now to Figures 6A to 6J, a set of example manufacturing steps which can be used to make the hydrophone disclosed (e.g., apparatus 100 discussed above with reference to Figure 1 ) is represented. As should be appreciated by those skilled in the art with the benefit of this disclosure, different manufacturing techniques can be used to fabricate the various disclosed embodiments of a hydrophone. As shown in Figure 6A, in an example flow, the process begins with a polished washer on both sides 615. Alignment marks 618 are etched on the rear side of the washer 615 and a cavity 610 is etched on the front side of the washer 615. In Figure 6B, a different washer of silicon on an insulator (SOI) 620 is used. In this embodiment, the SOI 620 washer has a 1 µm embedded oxide layer (625) and a 4 µm device layer (627). Dielectric material is deposited in the form of a layer 630 of 1 μm on the front side of the washer 620. In a subsequent processing step, layers 625, 627 and 630 can comprise the support structure (for example the support structure layer 130 discussed above with reference to Figure 1). As discussed previously, in some embodiments, the dielectric layer 630 is made of silicon dioxide. The dielectric layer 630 can be deposited on the washer 620 in order to act as an insulation layer in order to avoid a charge leakage from an adjacent electrode layer. In some embodiments, the dielectric layer 630 is fabricated using the micro-fabrication technique known as thermal oxidation. As appreciated by those skilled in the art, different manufacturing techniques can be used to etch and fabricate different dielectric layers on different washers.
    Turning now to Figure 6C, the washers 615 and 620 are bonded together in one embodiment to create the vacuum sealed cavity 610 using a fusion bond. In Figure 6D, the handling layer of the washer 620 is removed for further processing of the washer 620. In Figure 6E, a very thin piezoelectric seed layer, a bottom electrode layer, a piezoelectric layer and a upper electrode layer are sprayed onto an embedded oxide layer 625 sequentially to form the detection structure 635. In some embodiments, the piezoelectric layer is formed by depositing aluminum nitride particles using a high temperature deposition technique. Due to high temperature deposition, residual stress is induced in the piezoelectric material since the initial cause of the stress (eg heat) is removed once the high temperature deposition is completed. When a thick support layer is used (for example layers 625, 627 and 630), the impact of the residual stress on the sensitivity of the hydrophone is minimal. In some embodiments, the alignment marks 640 are also transferred from the rear side to the front side to provide additional alignment during subsequent lithography steps.
    Turning to Figure 6F, a thin layer of oxide is deposited using an enhanced plasma chemical vapor deposition (PECVD) process. The oxide is drawn in the form of a hard mask to prepare for etching the upper electrode. This mask must align with the previous alignment marks and stop at the piezoelectric layer. This step can be used to size the upper electrode so that its radius is smaller than the radius of the adjacent piezoelectric layer below it. In Figure 6G, another oxide layer 650 can be deposited using the PECVD oxide deposition. This layer is further drawn and etched in such a way that the piezoelectric layer 625 is dimensioned so that an ideal surface ratio (i.e. 77 percent) is obtained between the surface ratio between the 'upper electrode and the adjacent piezoelectric layer. At this stage, the structure of the detection layer is established and dimensioned so that a maximum amount of induced charge is obtained. (In Figure 6H, another oxide layer is deposited using the PECVD oxide deposit. This oxide layer is then drawn and etched on the lower electrode. In Figure 61, a thick oxide layer PECVD is deposited and drawn in order to open the contacts 655 and 660 for the two upper and lower electrodes Finally, in FIG. 6J, a layer of metal is deposited and drawn on the front side in order to form metal studs 670 and 665. As should be appreciated by those skilled in the art with the benefit of this disclosure, these metal pads can be used to measure the charge generated by the deformation of the piezoelectric layer and collected by, the electrode layers .
    Although specific embodiments have been described above, these embodiments are not intended to limit the scope of the present disclosure, even when only a single embodiment is described in relation to a particular feature. Examples of features provided in the disclosure are intended to be illustrations rather than limitations unless otherwise indicated. The above description is intended to cover these variations, modifications, and equivalents as is apparent to one skilled in the art having the benefit of this disclosure.
    The scope of this disclosure includes any feature or combination of features described here (either implicitly or explicitly), or any generalization thereof, whether or not it addresses all or some of the issues addressed herein .
    Many variations and modifications will become apparent to those skilled in the art once the above disclosure is fully appreciated.
    权利要求:
    Claims (18)
    [1" id="c-fr-0001]
    1. Apparatus, characterized in that it comprises: a plurality of hydrophones. (510) configured to carry out an underwater acoustic signal detection, at least one hydrophone of the plurality of hydrophones (510) comprising a sealed cavity vacuum dimensioned to reduce Brownian noise in the device.
    [2" id="c-fr-0002]
    2. Apparatus according to claim 1, characterized in that the at least one hydrophone comprises a sensor and a support structure, the sensor being configured to receive an acoustic signal, and the support structure comprising a first dielectric layer.
    [3" id="c-fr-0003]
    3. Apparatus according to claim 2, characterized in that the support structure comprises: the first dielectric layer located on a substrate; a silicon layer located on the first dielectric layer; and a second dielectric layer located on the silicon layer, the second dielectric layer being in contact with the sensor.
    [4" id="c-fr-0004]
    4. Apparatus according to claim 1, characterized in that the vacuum sealed cavity is delimited by a substrate and a dielectric layer.
    [5" id="c-fr-0005]
    5. Apparatus according to claim 1, characterized in that the vacuum sealed cavity is completely delimited by a substrate.
    [6" id="c-fr-0006]
    6. Apparatus according to claim 1, characterized in that the plurality of hydrophones (510) is arranged in a grid (500) having a plurality of rows and a plurality of columns, the plurality of hydrophones generating an accumulated charge sufficient for be detected by a preamplifier.
    [7" id="c-fr-0007]
    7. Apparatus according to claim 2, characterized in that a thickness of the support structure is greater than a thickness of the sensor of 4 µm or more.
    [8" id="c-fr-0008]
    8. Apparatus according to claim 2, characterized in that the sensor comprises a first electrode layer in contact with the support structure, a piezoelectric layer in contact with the first electrode layer, and a second electrode layer in contact with the piezoelectric layer.
    [9" id="c-fr-0009]
    9. Apparatus according to claim 8, characterized in that an area of the second electrode layer is 70 to 90 percent of an area of the piezoelectric layer.
    [10" id="c-fr-0010]
    10. Method, characterized in that it comprises: detecting an underwater acoustic signal using a plurality of hydrophones (510), at least one hydrophone of the plurality of hydrophones (510) comprising a vacuum sealed cavity sized to reduce Brownian noise in said at least one hydrophone.
    [11" id="c-fr-0011]
    11. Method according to claim 10, characterized in that the at least one hydrophone comprises a sensor and a support structure, the sensor being configured to receive an acoustic signal, and the support structure comprising a first dielectric layer.
    [12" id="c-fr-0012]
    12. Method according to claim 11, characterized in that the support structure comprises: the first dielectric layer located on a substrate; a silicon layer located on the first dielectric layer; and a second dielectric layer located on the silicon layer, the second dielectric layer being in contact with the sensor.
    [13" id="c-fr-0013]
    13. Method according to claim 10, characterized in that the vacuum sealed cavity is delimited by a substrate and a dielectric layer.
    [14" id="c-fr-0014]
    14. The method of claim 10, characterized in that the vacuum sealed cavity is completely delimited by a substrate.
    [15" id="c-fr-0015]
    15. The method of claim 10, characterized in that the plurality of hydrophones (510) is arranged in a grid (500) having a plurality of rows and a plurality of columns, the plurality of hydrophones generating an accumulated charge sufficient to be detected by a preamplifier.
    [16" id="c-fr-0016]
    16. The method of claim 11, characterized in that a thickness of the support structure is greater than a thickness of the sensor of 4 µm or more.
    [17" id="c-fr-0017]
    17. The method of claim 11, characterized in that the sensor comprises a first electrode layer in contact with the support structure, a piezoelectric layer in contact with the first electrode layer, and a second electrode layer in contact with the piezoelectric layer.
    [18" id="c-fr-0018]
    18. The method of claim 17, characterized in that an area of the second electrode layer is 70 to 90 percent of an area of the piezoelectric layer.
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    WO2016066938A1|2016-05-06|Electroacoustic transducer, and associated assembly and system
    EP3910344A1|2021-11-17|Detection device using piezoresistive transducer
    FR3096857A1|2020-12-04|MINIATURIZED CAPACITIVE ULTRASONIC ELECTROACOUSTIC TRANSDUCER OPERATING AT HIGH VOLTAGE
    FR3060200A1|2018-06-15|REDUCTION OF PARASITE CAPABILITIES IN A MICROELECTRONIC DEVICE
    FR2881224A1|2006-07-28|Fluid`s e.g. gas, absolute pressure detecting assembly for aeronautic field, has cover fixed to micromechanical structure via sealing layer, and layer electrically isolating metallic layers from structure, with exception of contacts
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    同族专利:
    公开号 | 公开日
    GB2576116A|2020-02-05|
    GB2512724B|2020-05-06|
    US20140230557A1|2014-08-21|
    SG10201400111TA|2014-09-26|
    GB2512724A|2014-10-08|
    FR3002405A1|2014-08-22|
    GB201402846D0|2014-04-02|
    CA2842769C|2019-07-16|
    GB2576116B|2020-08-12|
    US9321630B2|2016-04-26|
    FR3002405B1|2018-06-29|
    CA2842769A1|2014-08-20|
    GB201912680D0|2019-10-16|
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    法律状态:
    2018-05-25| PLFP| Fee payment|Year of fee payment: 5 |
    2019-02-25| PLFP| Fee payment|Year of fee payment: 6 |
    2020-02-25| PLFP| Fee payment|Year of fee payment: 7 |
    2021-02-23| PLFP| Fee payment|Year of fee payment: 8 |
    2021-12-10| RX| Complete rejection|Effective date: 20211104 |
    优先权:
    申请号 | 申请日 | 专利标题
    US13/772,183|US9321630B2|2013-02-20|2013-02-20|Sensor with vacuum-sealed cavity|
    US13772183|2013-02-20|
    FR1451363A|FR3002405B1|2013-02-20|2014-02-20|SENSOR WITH VACUUM SEALED CAVITY|
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