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    • 专利摘要:
    The invention relates to an interference filter (5) comprising: a first interface layer (CI1); a first dielectric portion (P1) of a first dielectric material having a first thickness (el) and resting on the first interface layer at a first location; a second dielectric portion (P2) of the first dielectric material, the second dielectric portion resting on the first interface layer at a second location, the second dielectric portion having a second thickness (e2) greater than the first thickness; a third dielectric portion (P'1) of a second dielectric material of refractive index lower than the refractive index of the first material, the third dielectric portion having a third thickness (e'1) and resting on the first portion; dielectric, the sum of the first thickness and the third thickness being equal to the second thickness; and a second interface layer (CI2), resting on the second and third dielectric portions (P2, P'1).
    公开号:FR3064083A1
    申请号:FR1752067
    申请日:2017-03-14
    公开日:2018-09-21
    发明作者:Laurent Frey
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    (54) interferential filter.
    FR 3 064 083 - A1
    The invention relates to an interference filter (5) comprising:
    a first interface layer (Cli);
    a first dielectric portion (Pj) of a first dielectric material, having a first thickness (el) and resting on the first interface layer at a first location;
    a second dielectric portion (P ) of the first dielectric material, the second dielectric portion resting on the first interface layer at a second location, the second dielectric portion having a second thickness (e ) greater than the first thickness;
    a third dielectric portion (Pj) of a second dielectric material with a refractive index lower than the refractive index of the first material, the third dielectric portion having a third thickness (ej) and resting on the first dielectric portion, the sum the first thickness and the third thickness being equal to the second thickness; and a second interface layer (Cl 2 ), resting on the second and third dielectric portions (P 2 , Pj).
    F. (K
    F2 2 d:
    Ci 2
    Or
    Y '!
    PHi e'i R ol Pi P'i 6 KB2 62

    B15606 - DD17641JB
    INTERFERENTIAL FILTER
    Field
    The present application relates to an interference filter, in particular for an image sensor, and to a method of manufacturing such an interference filter.
    Presentation of the prior art
    It is known to produce matrices of interference filters, in particular for image sensors, also called imagers, in the visible, infrared (in particular from 650 nm to 1050 nm) and / or l 'ultraviolet, which require to separate several frequency ranges. Such a filter matrix is also called a pixelated filter, a filter pixel, or elementary filter, corresponding to the smallest element of the filter having the same filtering properties.
    An example of the application of a pixelated filter corresponds to a color image sensor. The pixelated filter can then comprise first filter pixels letting red light pass, second filter pixels letting green light pass and third filter pixels letting blue light pass. The pixels of the filter can then have substantially the same lateral dimensions as the photodetection sites of the sensor.
    B15606 - DD17641JB
    Another example of applying a pixelated filter corresponds to an image sensor compensating for the spectral shift under spatially variable incidence. Indeed, the radiation which reaches the sensor can have an incidence, compared to the exposed face of the sensor, which increases as one moves away from the center of this face. The pixelated filter can then comprise different filter pixels receiving the radiation at different incidences, the spectral responses of each filter pixel being substantially identical regardless of the incidence.
    An interference filter is produced by a stack of several layers. As an example, an interference filter may comprise a stack of semi-reflective metallic layers separated by dielectric layers and / or an alternation of dielectric layers having different refractive indices, also called optical indices below. The thicknesses of the filter layers depend on the desired filtering properties.
    The production of a pixelated filter requires the production of dielectric layers having different thicknesses depending on the filter pixel considered. The process for manufacturing the pixelated filter then generally comprises the deposition of a dielectric layer on the entire structure and the etching of the dielectric layer so as to preserve the dielectric layer only on certain filter pixels. The following dielectric or metallic layer is then deposited on a surface having reliefs or steps, which causes this relief to be carried over from layer to layer up to the top of the stack.
    In general, the layer deposits are at least partially conformal, that is to say that the layer is deposited not only on the horizontal surfaces in the plane of the layers, but also on the sides of the previously etched layers. A lateral spacer or transition zone is thus formed on each successive deposition as soon as a relief is present. The dimension
    B15606 - DD17641JB lateral to the transition zone between two adjacent filter pixels therefore increases as deposits are made, between the initial relief and the top of the stack.
    A drawback is that if part of the light reaches the spacers, this results in a loss of signal by diffusion and / or a distortion of the spectral responses of the filter pixels. These losses can become significant when the width of the spacers is not negligible with respect to the lateral dimension, or size, of the filter pixel. This can in particular occur in the case of small filter pixels, the lateral dimension of which is less than 2 μm, even when the layers of the interference filter have a thickness of a few hundred nanometers. This can also occur for larger filter pixels, the lateral dimension of which is greater than 2 µm, with interference filter layers of a few micrometers.
    The document US8933389B2 describes an optical filter comprising studs of nanometric dimensions produced in a first dielectric material and embedded in a layer of a second dielectric material having a different refractive index, the space between the studs and the lateral dimensions of the studs being adjusted according to the desired filtering. A disadvantage of such a filter is that the distance between the pads must be much less than the wavelength of the filtered radiation. The production of the pads then requires high resolution lithography processes, for example immersion lithography processes or electronic lithography processes. However, immersion lithography methods are generally used on an industrial scale only for the first stages of manufacturing an integrated circuit, in particular for the manufacture of MOS transistors. In addition, electronic lithography methods generally have writing speeds that are too low for application on an industrial scale.
    B15606 - DD17641JB
    summary
    An object of an embodiment is to overcome all or part of the drawbacks of interference filters and their manufacturing methods described above.
    Another object of an embodiment is that the interference filter can be manufactured with standard optical lithography equipment.
    Another object of an embodiment is that the lateral dimensions of the spacers of the interference filter are reduced.
    Thus, one embodiment provides an interference filter comprising:
    a first flat interface layer, metallic or comprising a stack of at least two dielectric layers with a difference in refractive indices greater than or equal to
    0.5;
    a first dielectric portion of a first dielectric material or first dielectric materials, the first dielectric portion having a first thickness and resting on the first interface layer at a first location;
    a second dielectric portion of the first dielectric material or first dielectric materials, the second dielectric portion resting on the first interface layer at a second location, the second dielectric portion having a second thickness greater than the first thickness;
    a third dielectric portion of a second dielectric material, the refractive index of the second optical material at an operating wavelength of the filter being less than the refractive index of the first material or of the first materials at said length of wave, the third dielectric portion having a third thickness and resting on the first dielectric portion, the sum of the first thickness and the third thickness being equal to the second thickness; and
    B15606 - DD17641JB a second flat interface layer, metallic or comprising a stack of at least two dielectric layers with a difference in refractive indices greater than or equal to 0.5, resting on the second and third dielectric portions in contact with the second and third dielectric portions.
    According to one embodiment, the interference filter further comprises a fourth dielectric portion of the first dielectric material or of the first dielectric materials, the fourth dielectric portion resting on the first interface layer at a third location, the fourth dielectric portion having a fourth thickness between the first thickness and the second thickness.
    According to one embodiment, the interference filter further comprises a fifth dielectric portion of the second dielectric material, the fifth dielectric portion having a fifth thickness and resting on the fourth dielectric portion, the sum of the fourth thickness and the fifth thickness being equal to the second thickness.
    According to one embodiment, the interference filter further comprises a sixth dielectric portion of the first dielectric material or first dielectric materials, the sixth dielectric portion resting on the first interface layer at a fourth location, the sixth dielectric portion having a sixth thickness between the fourth thickness and the second thickness.
    According to one embodiment, the interference filter further comprises a seventh dielectric portion of the second dielectric material, the seventh dielectric portion having a seventh thickness and resting on the sixth dielectric portion, the sum of the sixth thickness and the seventh thickness being equal to the second thickness.
    According to one embodiment, the first dielectric material or the first dielectric materials are chosen from the group comprising silicon nitride, amorphous silicon, hafnium oxide, aluminum oxide, a film based
    B15606 - DD17641JB of aluminum, oxygen and nitrogen, a film based on silicon, oxygen, carbon and nitrogen, silicon nitride, niobium oxide, tantalum oxide, titanium oxide, hydrogenated amorphous silicon and mixtures of at least two of these compounds.
    According to one embodiment, the second dielectric material is chosen from the group comprising silicon dioxide, magnesium fluoride, silicon oxide, silicon oxynitride, hafnium oxide, oxide of aluminum, a film based on aluminum, oxygen and nitrogen, a film based on silicon, oxygen, carbon and nitrogen, silicon nitride and mixtures of at least two of these compounds.
    An embodiment also provides an image sensor comprising the interference filter as defined above and the interference filter comprises a first elementary filter comprising the first portion and the third portion and a second elementary filter comprising the second portion.
    According to one embodiment, the sensor is a color image sensor, the first elementary filter is a bandpass filter centered on a first wavelength and the second elementary filter is a bandpass filter centered on a second length wave.
    According to one embodiment, the sensor is a color image sensor, the first elementary filter is a bandpass filter centered on a third wavelength for radiation at a first incidence relative to the interference filter and the second filter elementary is a bandpass filter centered on the third wavelength to within 1% for radiation at a second incidence relative to the interference filter.
    One embodiment also provides a method of manufacturing an interference filter as defined above, comprising the following successive steps:
    B15606 - DD17641JB
    a) depositing a first dielectric layer of the first dielectric material or of the first dielectric materials on the first interface layer;
    b) etching the first dielectric layer to remove the first dielectric layer at the first location and keep the first layer at the second location;
    c) depositing a second layer of the first dielectric material or of the first dielectric materials on the first interface layer at the first location and on the first dielectric layer at the second location; and
    d) formation of the third portion on the second layer at the first location.
    According to one embodiment, step d) comprises the following steps:
    depositing a third dielectric layer of the second dielectric material on the second layer; and etching the third dielectric layer until the second dielectric layer is reached at the second location.
    According to one embodiment, the etching of the third dielectric layer comprises a mechanochemical polishing step.
    Brief description of the drawings
    These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments made without implied limitation in relation to the attached figures, among which:
    Figures 1 and 2 are sectional views, partial and schematic, of embodiments of an interference filter;
    FIGS. 3A to 3G are sectional views, partial and schematic, of structures obtained at successive stages of the embodiment of a method for manufacturing the interference filter of FIG. 1;
    B15606 - DD17641JB FIGS. 4 to 7 are sectional views, partial and schematic, of embodiments of an image sensor comprising an interference filter;
    FIG. 8 is a partial and schematic sectional view of an embodiment of an interference filter for a color and infrared image sensor;
    FIG. 9 represents transmission curves of filter pixels of the filter of FIG. 8;
    Figures 10 and 11 are figures similar to Figures 8 and 9 of an example of comparison of an interference filter for a color and infrared image sensor;
    FIG. 12 represents transmission curves of four pixels of another embodiment of a filter for a color and infrared image sensor;
    FIG. 13 is a sectional, partial and schematic view of an embodiment of an interference filter for an infrared sensor with tilt compensation;
    FIG. 14 shows transmission curves of filter pixels of the filter of FIG. 13; and FIGS. 15 and 16 are figures similar to FIGS. 12 and 13 of an example of comparison of an interference filter for an infrared sensor with tilt compensation.
    detailed description
    For the sake of clarity, the same elements have been designated by the same references in the different figures and, moreover, as is usual in the representation of electronic circuits, the various figures are not drawn to scale. In addition, only the elements useful for understanding this description have been shown and are described. In particular, the means for processing the signals supplied by the sensors described below are within the reach of those skilled in the art and are not described. In the following description, unless indicated otherwise, the terms substantially, approximately and in the order of mean to within 10%. Furthermore, in the following
    B15606 - DD17641JB the description, the size or lateral dimension of an element of a sensor, is called the maximum dimension of this element in a plane perpendicular to the stacking direction of the layers forming the sensor.
    In the following description, the refractive index of the material means the refractive index of the material over the operating range of the interference filter, considering that the refractive index of the material is substantially constant over the range of lengths of operating waves of the interference filter or the average refractive index of the material over the operating range of the interference filter in the case where the refractive index of the material varies over the operating wavelength range of the interference filter.
    FIG. 1 represents an embodiment of an optoelectronic circuit 1 comprising an interference filter 5 resting on a support 10. The support 10 may correspond to an image sensor comprising, for example, two photodetectors PHg and PHg. In the present embodiment, the filter 5 comprises two filter pixels F g and Fg, the filter pixel F g covering the photodetector PHg and the filter pixel Fg covering the photodetector PHg. Furthermore, in the present embodiment, the filter 5 comprises a filtering level Ng. The Ng filtering level includes from bottom to top in Figure 1:
    a first interface layer CIg;
    portions Pg and Pg of a first dielectric material having a high refractive index nji resting on the interface layer CIg, preferably in contact with the interface layer CIg, the portion Pg having a thickness eg and being located at the level of the filter pixel Fg and the portion Pg having a thickness eg, strictly greater than the thickness eg, and being located at the level of the filter pixel Fg, the portion Pg delimiting a substantially flat surface Sg, opposite to the layer d 'CIg interface;
    a portion P'g of thickness e'g of a second dielectric material having a low refractive index ng, strictly less than the refractive index nfj, resting on the portion
    B15606 - DD17641JB
    P] _, preferably in contact with the portion P] _, and delimiting a surface S] _ substantially planar, opposite the reflective layer CI] _ substantially coplanar with the surface S2; and a second interface layer CI2 resting on the portions P '] _ and P2, preferably in contact with the portions P'] _ and P2 ·
    The first dielectric material is, moreover, preferably transparent, that is to say with an extinction coefficient of less than 5.10 - ^ in the operating range of the filter pixels F] _ and F2. The second dielectric material is also preferably transparent, that is to say with an extinction coefficient of less than 5.10 - ^ in the operating range of the filter pixels F] _ and F2.
    Each interface layer CI] _ and CI2 may correspond to a single layer (made of a dielectric or metallic material), or to a stack of two layers or of more than two layers (made of dielectric materials).
    The assembly comprising the stacking of the part of the interface layer CI 2 under the portion P] _ of the first dielectric material, of the portion P] _ of the first dielectric material, of the portion P '] _ of the second material dielectric and of the part of the interface layer CI2 on the portion P '] _ of the second dielectric material forms the filter pixel F] _. The assembly comprising the stacking of the part of the interface layer CI 2 under the portion P2 of the first dielectric material, of the portion P2 of the first dielectric material, and of the part of the interface layer CI2 resting on the portion P2 of the second dielectric material forms the filter pixel F2.
    The filter 5 receives an incident radiation Ri n . The filter 5 provides the support 10 with a first radiation R o ] _ to the photodetector PH] _ which corresponds to the part of the incident radiation Rj_ n filtered by the filter pixel F] _. The filter 5 provides the support 10 with a second radiation R o 2 to the photodetector PH2
    B15606 - DD17641JB which corresponds to the part of the incident radiation R-j_ n filtered by the filter pixel F2.
    FIG. 2 represents another embodiment of an optoelectronic circuit 15 comprising an interference filter 20 which corresponds to a generalization of the interference filter 5 to more than two filter pixels. In the present embodiment, the filtering level N] _ comprises N filter pixels Fi to Fjq, where N is an integer varying from 2 to 20.
    Each filter pixel F-j_, i varying from 1 to Nl, comprises a stack, sandwiched between the interface layers CI] _ and Clq, of a portion P-j_ of thickness e-j_ of the first material dielectric covered with a portion P'-j_ of thickness e'j_ of the second dielectric material, the portion P 'j_ delimiting a surface Sj_ in contact with the interface layer Clq · The filter pixel Fjq comprises only a portion P ^ of the first dielectric material sandwiched between the interface layers CI] _ and Clq, the portion P ^ defining a surface in contact with the interface layer Clq · For i varying from 1 to N-2, the thickness ej_ + ] _ is strictly greater than the thickness e-j_ and the thickness e'j_ + ] _ is strictly less than the thickness e'j_. For i varying from 1 to Nl, the sum of the thicknesses e-j_ and e'j_ is also at the thickness e ^. As a result, the surfaces S] _ à are substantially coplanar.
    According to one embodiment, each portion P-j_ is formed by the stack of C] _ to Cj_ layers of the first dielectric material. According to one embodiment, the layer C] _ extends over all the filter pixels F] _ to F ^ and the layer extends only over the filter pixel F ^. The layer Cj_ extends over the filter pixels F-j_ to F ^ and does not extend over the filter pixels F] _ to F ^ _j_. As a variant, the layers C] _ to Cj_ may not all be in the same first dielectric material. However, they are all made of a dielectric material whose refractive index is strictly higher than the refractive index ng.
    B15606 - DD17641JB
    In the embodiments described above, the interference filter comprises a single level of filtering Ng. However, the interference filter may comprise a stack of two filtering levels or a stack of more than two filtering levels, each filtering level possibly having the structure described previously in relation to FIG. 2, an interface layer being able to be common two successive filter levels.
    The inventors have demonstrated that it is possible to obtain a pixelated filter 20 comprising filter pixels corresponding to bandpass filters adapted to globally filter radiation between two wavelengths λg and λg, when the difference between the refractive index n ^ at the wavelength λg and the low refractive index ng at the wavelength λ] _ is greater than a given threshold. In particular, when the interface layers CIg, CIg are metallic semi-reflective layers, the inventors have demonstrated that it is possible to obtain a pixelated filter 20 comprising filter pixels corresponding to bandpass filters adapted to globally filter radiation between two wavelengths Àg and Àg, when the refractive index n ^ at the wavelength Àg and the low refractive index ng at the wavelength Àg verify the following relationship :
    njg (Àg) / ng (Àg) ù Àg / Àg
    According to one embodiment, the first and second interface layers CIg, CIg are semi-reflective layers, for example metallic layers, in particular made of silver (Ag), optionally doped to improve mechanical strength or reduce the effects of aging. In particular, in the case of using the interference filter for a color sensor or a color and infrared sensor, the interface layers CIg, CIg are preferably metallic semi-reflective layers.
    According to one embodiment, each interface layer CIg, CIg comprises at least two dielectric layers of indices
    B15606 - DD17641JB of different refractions with an index contrast of at least
    0.5.
    The refractive index n ^ can be between 1.8 and 3.8. The refractive index ng can be between 1.3 and 2.5.
    The first dielectric material can be chosen from the group comprising silicon nitride (SiN), amorphous silicon (aSi), hafnium oxide (HfO x ), aluminum oxide (A1O X ), a film based on aluminum, oxygen and nitrogen (A10 x Ny), a film based on silicon, oxygen, carbon and nitrogen (SiO x CyN z ), silicon nitride (SiN x ), niobium oxide (NbO x ), tantalum oxide (TaO x ), titanium oxide (TiO x ), hydrogenated amorphous silicon (aSiH) and mixtures of at least two of these compounds . Each layer C z can have a thickness of between 5 nm and 100 nm. The thickness e ^ can be between 50 nm and 150 nm.
    The second dielectric material can be chosen from the group comprising silicon dioxide (SiOg), magnesium fluoride (MgF2), silicon oxide (SiO x ), silicon oxynitride (SiO x Ny), hafnium oxide (HfO x ), aluminum oxide (A1O X ), a film based on aluminum, oxygen and nitrogen (A10 x Ny), a film based on silicon, oxygen, carbon and nitrogen (SiO x CyN z ), silicon nitride (SiN x ) and mixtures of at least two of these compounds. The thickness e '] _ can be between 50 nm and 150 nm.
    FIGS. 3A to 3G are partial and schematic sectional views of structures obtained in successive stages of another embodiment of the interference filter 5 of FIG. 1.
    In this embodiment, the method comprising the following successive steps:
    - Formation of the interface layer CI] _ on the support (Figure 3A);
    B15606 - DD17641JB
    - Formation of the layer Cg of thickness eg-eg of the first dielectric material on the first interface layer CIg (FIG. 3B);
    etching of the layer Cg, with etching stop on the interface layer CIg at the location of the first filter pixel F g so as to keep the layer Cg only at the location of the second filter pixel Fg ( Figure 3C);
    - Formation of the layer Cg of thickness eg of the first dielectric material on the first interface layer CIg and on the layer Cg (FIG. 3D). The portion Pg of the first dielectric material is then obtained at the location of the first filter pixel Fg and the portion Pg of the second dielectric material at the location of the second filter pixel Fg;
    - Formation of a layer 30 of thickness e'g of the second dielectric material on the layer Cg (Figure 3E);
    - Etching of the layer 30, with etching stop on the part of the layer Cg located at the location of the second filter pixel Fg, which delimits the portion P'g of the second dielectric material at the location of the first pixel Fg filter (Figure 3F); and
    - Formation of the interface layer CIg on the portion P'g of the second dielectric material and the portion Pg of the first dielectric material (Figure 3G).
    Alternatively, an additional layer, not shown in the figures, of a dielectric or metallic material may be provided, covering the interface layer CIg and playing, for example, the role of a protective layer against the oxidation and / or a layer improving the adhesion of the following deposits. It is this layer which then serves as an etching stop layer during the etching of the layer Cg. As a variant, the formation of the interface layer CIg can be preceded by the formation of an additional layer, not shown in the figures, of a dielectric or metallic material, playing, for example, the role of a layer improving the adhesion of the interface layer CIg.
    B15606 - DD17641JB
    In general, in the case of the interference filter 20 comprising N filter pixels F] _ to F ^, an embodiment of a method for manufacturing the interference filter 20 comprises the following steps:
    1) formation of the interface layer CI] _ on the support 10;
    repetition for i decreasing from N to 2 of the following steps 2) and 3):
    2) formation of the layer Cj_ of thickness e-j_-e-j __] _ of the first dielectric material over the entire structure;
    3) etching of the layer Cj_ formed in step 2), with etching stop on the interface layer CI] _ at the location of the filter pixels F] _ to F-j_-i so as to leave the layer Cj_ formed in step 2) at the locations of the filter pixels F-j_ to f N '
    4) formation of a layer of thickness e '] _ of the second dielectric material on the structure obtained after the repetition of steps 2) and 3);
    5) etching of the layer of the second dielectric material, with etching stop on the first dielectric material at the location of the filter pixel F ^ so as to delimit the portions P '] _ to P'n-1 of the second dielectric material at the location of the filter pixels F] _ to F ^ _] _; and
    6) formation of the interface layer CI2 on the structure obtained in step 5).
    According to one embodiment, the etching step in step 5) can be a mechanical-chemical polishing step (CMP, English acronym for Chemical-Mechanical Planarization), in which case the layer 30 is preferably deposited with a thickness at least twice e '] _. According to another embodiment, steps 5) and 6) described above are replaced by a step of depositing a polymeric dielectric material at the location of the filter pixels F] _ to F ^ _] _. In this case, the chemical mechanical polishing step may not be present.
    B15606 - DD17641JB
    Advantageously, the spacers of the interference filter 20 have lateral dimensions preferably less than 50 nm.
    The pixelated filter according to the embodiments described above can be used in an image sensor.
    The image sensor can then comprise photon or photodetector sensors adapted to detect radiation in ranges of different wavelengths or adapted to detect radiation in the same range of wavelengths. In the latter case, it is only the presence of the filter pixels which allows the detection of radiation in different wavelength ranges. Each filter pixel can then cover at least one photodetector of the sensor and play the role of a bandpass filter of the incident radiation which reaches the sensor to provide radiation adapted to the range of wavelengths detected by the associated photodetector. The lateral dimensions of the filter pixels can be equal to the lateral dimensions of the photosites of the image sensor or equal to a multiple of the lateral dimensions of the photosites of the image sensor. The arrangement of the filter pixels can follow that of the photosites of the image sensor. As an example, the filter pixels can be arranged according to a Bayer matrix. The reduced dimensions of the spacers of the interference filter 20 in particular allow the use of the interference filter 20 with image sensors whose photosites are less than 1.5 μm in size. The image sensor can be a color sensor or a color and infrared sensor.
    The inventors have demonstrated that the pixelated filter according to the embodiments described above makes it possible, surprisingly, to carry out filtering in a wavelength range as wide as that necessary for a color sensor or a color and infrared sensor. . Indeed, the presence of the portions P ′ increases the optical path of all the filter pixels except the pixel F ^. To keep the same wavelengths filtered by the filter pixels as for a
    B15606 - DD17641JB classic pixelated filter, it suffices to keep the same optical path in each filter pixel as for a classic pixelated filter. However, a simplified calculation would show, for example by considering the refractive index of silicon nitride for the high refractive index nji and the refractive index of silicon dioxide for the low refractive index ng, that the range accessible wavelengths would only go from blue to green. The inventors have demonstrated that the portions P ′ of low refractive index ng cause a phase shift favorable to reflection on the semi-reflecting interface layers and that a range of wavelengths ranging from 450 nm to 600 nm was accessible when the difference between the high refractive index nji and the low refractive index ng was greater than or equal to 0.5. The addition in at least one filter pixel of an additional dielectric material having a refractive index greater than the high refractive index nji makes it possible to further enlarge the range of wavelengths accessible up to infrared, especially up to the wavelength 900 nm.
    The sensor can be adapted to the detection of an image over a given wavelength range, for example in the infrared range. The pixelated filter according to the embodiments described above can then be used to compensate for variations in the inclination of the radiation which reaches the sensor. Each filter pixel is then located at a location which depends on the inclination of the radiation received by the sensor. Each filter pixel can then play the role of a band pass filter of the radiation with a given inclination centered substantially on the same wavelength.
    Figures 4 to 7 show embodiments of image sensors comprising an interference filter according to the embodiments described above.
    In the embodiments shown in FIGS. 4 to 7, the support 10 corresponds to an integrated circuit comprising a substrate 42 in which and / or on which photon sensors are formed, three photon sensors PH] _, PH2, PH3
    B15606 - DD17641JB being represented in FIGS. 4 to 7. The support 10 further comprises a stack 44 of electrically insulating layers covering the substrate 42 in which electrically conductive elements 46 are formed, which allow in particular an electrical connection of the sensors of photons. In the embodiments shown in FIGS. 4 to 7, the interference filter 20 comprises, by way of example, three pixels of filters Fg, Fg and F3 and a single level of filter Ng. In addition, the image sensors comprise lenses 48, for example a lens 48 for each photon sensor PHg, PHg, PH3.
    FIG. 4 represents an embodiment of an image sensor 50 in which the interference filter 20 is disposed on the side of the stack 44 opposite the substrate 42. This type of arrangement is called mounting on the front face, in the measurement where the indicative radiation reaches the sensors PHg, PHg, PH3 on the side of the stack 44. In FIG. 4, the interference filter 20 is fixed directly to the stack 44, for example by means of a bonding material or preferably, by being deposited directly on the stack 44. In this embodiment, the lenses 48 rest on the interference filter 20, on the side of the interference filter 20 opposite the support 10.
    FIG. 5 represents an embodiment of an image sensor 55 in which the interference filter 20 is arranged on the front face and in which the lenses 48 are arranged between the support 10 and the interference filter 20 and rest on the stack 44. An air film 56 is provided between the lenses 48 and the interference filter 20. The method of manufacturing the image sensor 55 can comprise the formation of the interference filter 20 on a substrate 58 substantially transparent to the incident radiation and the fixing , for example by bonding, of the interference filter 20 to the stack 44, the air film 56 being maintained, for example by the use of a spacer, not shown, interposed between the stack 44 and the filter 20, at the periphery of stack 44. According to a
    B15606 - DD17641JB variant not shown, the interference filter 20 is deposited over the lenses 48 without an air gap, in which case it is necessary to planarize the lenses 48 beforehand by depositing a layer of very low refractive index , for example a polymer with a refractive index of 1.2.
    FIG. 6 represents an embodiment of an image sensor 60 in which the interference filter 20 is arranged on the side of the substrate 42. This type of arrangement is called rear-face mounting, insofar as the indicative radiation reached the sensors PH] _, PH2, PH3 on the side of the substrate 42. In FIG. 6, the interference filter 20 is fixed directly to the substrate 42, optionally by means of a bonding material. In the present embodiment, the lenses 48 rest on the interference filter 20, on the side of the interference filter 20 opposite the support 10.
    FIG. 7 represents an embodiment of an image sensor 65 in which the interference filter 20 is arranged on the rear face and in which the lenses 48 are arranged between the support 10 and the interference filter 20 and rest on the substrate 42 As for the image sensor 55, an air film 66 is provided between the lenses 48 and the interference filter 20. The method of manufacturing the image sensor 65 can be analogous to what has been described for the sensor. of images 55.
    In the embodiments described above, the image sensor may include an anti-reflection layer, not shown.
    In the embodiments described above in relation to FIGS. 5 and 7, the use of the interference filter 20 is particularly advantageous insofar as, in these embodiments, the incident radiation which reaches the interference filter 20 has not been still focused by the lenses 48 and necessarily crosses the spacers between the filter pixels. The reduced dimensions of these spacers improve the operation of the sensor.
    B15606 - DD17641JB
    FIG. 8 represents an embodiment of an interference filter 70 whose spectral response has been determined by simulation. The interference filter 70 included two filtering levels N 2 and N 2 , each filtering level comprising four filter pixels Filter_B, Filter_G, Filter_R and Filter_IR corresponding respectively to a filter allowing only blue light B to pass, to a filter allowing only pass green light G, to a filter letting only red light R and to a filter letting only infrared radiation IR centered substantially on the wavelength of 800 nm.
    The thicknesses and the materials making up the layers of the interference filter 70 are grouped in table I below as a function of the filter pixels Filter_B, Filter_G,
    Filter_R and Filter_IR. In the following description, a layer is indicated with a zero thickness for a given filter pixel if it is not present for this filter pixel.
    Filter B G filter Filter R IR filter Layer No. Material Thickness (nm) Al SiN 42 NZ Ag 22 A3 TiO 2 5 A4 so 0 0 0 25 AT 5 SiN 0 0 33 33 A6 SiN 0 32 32 32 A7 SiN 6 6 6 6 AT 8 SiO 2 91 59 25 0 A9 SiN 5 A10 Ag 33 Garlic TiO 2 5 Al 2 so 0 0 0 25 Al 3 SiN 0 0 33 33 Al 4 SiN 0 32 32 32 Al 5 SiN 6 6 6 6
    B15606 - DD17641JB
    Al 6 SiO 2 91 59 25 0 Al 7 SiN 5 Al 8 Ag 16 Al 9 SiN 46
    Table I
    The filter 70 was manufactured by successively depositing each layer A1 to Al9 and by engraving the layers A4 to A6 and A12 to A14 at the locations where they are not present and by providing for a planarization step after the deposition of the layers A8 and Al 6 until reaching the underlying layers.
    The layers A3 and Ail of TiOq serve both to encapsulate the layer of Ag A2 and A10 underlying respectively and as an etching stop layer during the etching of the subsequent layers of aSi and SiN. The refractive index of SiN over the wavelength range from 450 nm to 600 nm is substantially constant is equal to 2.0 and the refractive index of SiOq over the wavelength range from 450 nm to 600 nm is substantially constant is equal to 1.46. The refractive index of amorphous silicon (aSi) over the wavelength range of infrared is substantially constant is equal to 3.7. The total thickness of the filter 70 was 0.37 µm. The thickness of the filter 70 being small compared to the size of the pixels, the phenomenon of optical crosstalk is not very pronounced.
    FIG. 9 represents curves of evolution of the transmission respectively of the filter pixel Filter_B (curve CAg), of the filter pixel Filter_G (curve CAg), of the filter pixel Filter_R (curve CAr) and of the filter pixel Filter_IR (curve CAjr) for the interference filter 70.
    FIG. 10 represents an example of comparison of an interference filter 75 whose spectral response has been determined by simulation. The interference filter 75 had the same structure as the filter 70 with the difference that the layers of SiOq A8 and Al6 were not present and the thicknesses of the other layers could be modified.
    B15606 - DD17641JB
    The thicknesses and materials making up the layers of the interference filter 75 are grouped in Table II below as a function of the filter pixels Filter_B, Filter_G, Filter R and Filter IR.
    Filter B G filter Filter R IR filter Layer No. Material Thickness (nm) BI SiN 41 B2 Ag 22 B3 TiO 2 5 B4 so 0 0 0 19 B5 SiN 0 0 20 20 B6 SiN 0 24 24 24 B7 SiN 48 48 48 48 B8 SiN 5 B9 Ag 33 B10 TiO 2 5 Bll so 0 0 0 20 B12 SiN 0 0 21 21 B13 SiN 0 26 26 26 B14 SiN 47 47 47 47 B15 SiN 5 B16 Ag 17 B17 SiN 70
    Table II
    The filter 75 was manufactured by successively depositing each layer A1 to Al9 and by etching the layers B4 to B6 and B11 to B13 at the locations where they are not present.
    FIG. 11 represents curves of evolution of the transmission respectively of the filter pixel Filter_B (curve CB3), of the filter pixel Filter_G (curve CBq), of the filter pixel Filter_R (curve CBr) and of the filter pixel Filter_IR ( curve CBir) for the interference filter 75. The transmission curves of the filter 70 are substantially identical to the transmission curves of the filter 75. The spectral responses of the filters
    B15606 - DD17641JB and 75 are therefore substantially identical. However, the maximum lateral dimension of the spacers of the filter 75 is greater than that of the spacers of the filter 70. Indeed, between the filter pixels Filter_IR and Filter_R, the maximum lateral dimension of the spacers of the filter 75 is for example of the order of 250 nm while it is around 50 nm for filter 70.
    The filter 70 is therefore particularly suitable for use with an image sensor whose size of the photosites is less than a micrometer.
    It is possible to center the filter pixel Filter_IR at a wavelength greater than that of the filter 70 described above, for example by introducing a layer of aSi into the filter pixel Filter_R. Replacing a layer of SiN with a layer of aSi with a higher refractive index in the filter pixel Filter_R makes it possible to reduce the thickness of the step between the filter pixel Filter_G and the filter pixel Filter_R, and the difference thickness can be used to shift the filter pixel Filter_IR towards the long wavelengths. However, since the total thickness of each filter pixel must be kept identical to that of the filter Filter_B, the thickness of the filter pixel Filter_IR cannot be increased indefinitely.
    The spectral response of such an interference filter was determined by simulation with aSi in the filter pixels Filter_IR and Filter_R. The filter stack has a total thickness of 0.39 pm, the step heights between the filter pixel Filter_B and the filter pixel Filter_G, between the filter pixel Filter_G and the filter pixel Filter_R and between the filter pixel Filter_R and the filter pixel Filter_IR were 38 nm, 8 nm, and 38 nm, respectively. The maximum width of the spacers is for example of the order of 60 nm at the transitions between the filter pixel Filter_R and the filter pixel Filter_IR.
    The thicknesses and materials making up the layers of the interference filter are grouped in Table III ci3064083
    B15606 - DD17641JB below as a function of the filter pixels Filter_B, Filter_G, Filter R and IR filter.
    Filter B G filter Filter R IR filter Layer No. Material Thickness (nm) Cl SiN 75 C2 Ag 18 C3 TiO 2 5 C4 so 0 0 0 38 C5 so 0 0 8 8 C6 SiN 0 38 38 38 C7 SiN 5 5 5 5 C8 SiO 2 85 47 38 0 C9 SiN 5 CIO Ag 31 Eyelash TiO 2 5 C12 so 0 0 0 38 C13 so 0 0 8 8 C14 SiN 0 38 38 38 C15 SiN 5 5 5 5 C16 SiO 2 85 47 38 0 C17 SiN 5 C18 Ag 16 C19 SiN 47
    Table III
    FIG. 12 represents curves of evolution of the transmission respectively of the filter pixel Filter_B (curve CCg), of the filter Filter_G (curve CCg), of the filter Filter_R (curve CCr) and of the filter Filter_IR (curve CCjr) for the filter interference defined by Table III. A filter pixel Filter_IR centered on a wavelength of about 900 nm was obtained.
    FIG. 13 represents an embodiment of an interference filter 80 with compensation for the spectral shift under spatially variable incidence whose spectral response has been
    B15606 - DD17641JB determined by simulation. The interference filter 80 included four filter pixels F] _, F2, F3 and F4. The filter pixels Fi, F2, F3 and F4 are intended to receive radiation having an incidence respectively between 0 ° and 14 °, between 14 ° and 21 °, between 21 ° and 26 ° and between 26 ° and 30 °.
    The thicknesses and materials making up the layers of the interference filter 80 are grouped in Table IV below as a function of the filter pixels.
    Filter B G filter Filter R IR filter Layer No. Material Thickness (nm) DI so 85 D2 SiO 2 34 D3 so 162 D4 SiO 2 142 D5 so 68 D6 SiO 2 172 D7 so 56 D8 SiO 2 19 D9 so 321 D10 SiO 2 169 Dlla so 0 0 0 19 Dllb so 0 0 19 19 Dllc so 0 19 19 19 Dlld so 33 33 33 33 Miss SiN 10 10 10 10 D12a SiO 2 57 38 19 0 D12b SiO 2 131 D13 so 99 D14 SiO 2 46 D15 so 161 DI 6 SiO 2 62 D17 so 97
    Table IV
    B15606 - DD17641JB
    The filter 80 was manufactured by successively depositing each layer D1 to D17 and by etching the layers Dlla to Dllc at the locations where they are not present and by providing for a planarization step after the deposition of the layer D12a until reaching the layer underlying.
    FIG. 14 represents curves of evolution, for the filter 80, of the transmission respectively of the filter pixel Pg receiving a radiation at zero incidence (curve D0 °), of the filter pixel Pg receiving a radiation at incidence equal to
    30 ° (curve D30 ° _l) and the filter pixel P 4 receiving radiation at incidence equal to 30 ° (curve D30 ° _2). The spectral response of the filter pixel P4 is substantially centered on 940 nm like the spectral response of the filter pixel Pg.
    FIG. 15 represents an example of comparison of an interference filter 85 with compensation for the spectral shift under spatially variable incidence, the spectral response of which has been determined by simulation. The interference filter 85 had the same structure as the filter 80 with the difference that the layer of SiOg D12a was not present and that the thicknesses of the other layers could be modified.
    The thicknesses and materials making up the layers of the interference filter 80 are grouped in Table IV below as a function of the filter pixels.
    Filter B G filter Filter R IR filter Layer No. Material Thickness (nm) El so 85 E2 SiO 2 33 E3 so 162 E4 SiO 2 147 E5 so 65 E6 SiO 2 150 E7 so 95 E8 SiO 2 10 E9 so 302 E10 SiO 2 163
    B15606 - DD17641JB
    Ella so 0 0 0 16 Ellb so 0 0 16 16 She so 0 16 16 16 Elld so 45 45 45 45 E12 SiO 2 144 E13 so 103 E14 SiO 2 45 E15 so 158 E16 SiO 2 72 E17 so 95
    Table IV
    The filter 85 was manufactured by successively depositing each layer E1 to E17 and by etching the layers Ella to It at the locations where they are not present.
    FIG. 16 represents curves of evolution, for the filter 85, of the transmission respectively of the filter pixel Pg receiving a radiation at zero incidence (curve E0 °), of the filter pixel Pg receiving a radiation at incidence equal to 30 ° (curve E30 ° _l) and of the filter pixel P 4 receiving radiation at incidence equal to 30 ° (curve E30 ° _2). The spectral response of the filter pixel P4 is substantially centered on 940 nm like the spectral response of the filter pixel Pg.
    The transmission curves of the filter 85 are substantially identical to the transmission curves of the filter 80. The spectral responses of the filters 85 and 80 are therefore substantially identical.
    For the filter 85, the step height between the filter pixels F3 and F4 for the layers Ella to Elle is 16 nm. However, this structure is covered by six layers of total thickness equal to 660 nm, which generates a spacer whose lateral dimension is of the order of 500 nm above each step between the filter pixels F3 and F4. As the spacer is significantly wider than the step height, the relief becomes smooth as the last six deposits are made. However, it is then not possible to precisely control the thicknesses
    B15606 - DD17641JB deposited in the transition zones. As a result, the signals measured on the pixels of the imager under the filter matrix, facing the steps, can be disturbed, up to pixel sizes of several micrometers.
    For the filter 80, the step height between the filter pixels F3 and F4 for the layers Dlla to Dllc is 19 nm. However, the subsequent layers D12b to D17 are deposited on a flat surface. The maximum lateral dimension of the spacers of the filter 85 is of the order of 50 nm, that is to say less than that of the filter 85.
    Various embodiments with various variants have been described above. It is noted that a person skilled in the art can combine various elements of these various embodiments and variants without demonstrating inventive step.
    B15606 - DD17641JB
    权利要求:
    Claims (14)
    [1" id="c-fr-0001]
    1. Interference filter (20) comprising:
    a first interface layer (CI] _) flat, metallic or comprising a stack of at least two dielectric layers with a difference in refractive indices greater than or equal to
    0.5;
    a first dielectric portion (P] _) of a first dielectric material or first dielectric materials, the first dielectric portion having a first thickness (e] _) and resting on the first interface layer at a first location;
    a second dielectric portion (P2) of the first dielectric material or first dielectric materials, the second dielectric portion resting on the first interface layer at a second location, the second dielectric portion having a second thickness (e2) greater than the first thickness ;
    a third dielectric portion (P '] _) of a second dielectric material, the refractive index of the second optical material at an operating wavelength of the filter being less than the refractive index of the first material or first materials at said wavelength, the third dielectric portion having a third thickness (e '] _) and resting on the first dielectric portion, the sum of the first thickness and the third thickness being equal to the second thickness; and a second interface layer (CI2) flat, metallic or comprising a stack of at least two dielectric layers with a difference in refractive indices greater than or equal to 0.5, based on the second and third dielectric portions (P2 , P'i) in contact with the second and third dielectric portions.
    [2" id="c-fr-0002]
    2. Interference filter according to claim 1, further comprising a fourth dielectric portion of the first dielectric material or the first materials
    B15606 - DD17641JB dielectric, the fourth dielectric portion resting on the first interface layer at a third location, the fourth dielectric portion having a fourth thickness between the first thickness (eq) and the second thickness (eq) ·
    [3" id="c-fr-0003]
    3. The interference filter according to claim 2, further comprising a fifth dielectric portion of the second dielectric material, the fifth dielectric portion having a fifth thickness and resting on the fourth dielectric portion, the sum of the fourth thickness and the fifth thickness. being equal to the second thickness (eq) ·
    [4" id="c-fr-0004]
    The interference filter according to claim 3, further comprising a sixth dielectric portion of the first dielectric material or first dielectric materials, the sixth dielectric portion resting on the first interface layer at a fourth location, the sixth dielectric portion having a sixth thickness between the fourth thickness and the second thickness (eq).
    [5" id="c-fr-0005]
    The interference filter according to claim 4, further comprising a seventh dielectric portion of the second dielectric material, the seventh dielectric portion having a seventh thickness and resting on the sixth dielectric portion, the sum of the sixth thickness and the seventh thickness. being equal to the second thickness (eq).
    [6" id="c-fr-0006]
    6. Interference filter according to any one of claims 1 to 5, in which the first dielectric material or the first dielectric materials are chosen from the group comprising silicon nitride (SiN), amorphous silicon (aSi), oxide hafnium (HfO x ), aluminum oxide (A1O X ), a film based on aluminum, oxygen and nitrogen (A10 x Ny), a film based on silicon, oxygen , carbon and nitrogen (SiO x CyN z ), silicon nitride (SiN x ), niobium oxide (NbO x ), tantalum oxide (TaO x ), titanium oxide (TiO x ), hydrogenated amorphous silicon (aSiH) and mixtures of at least two of these compounds.
    B15606 - DD17641JB
    [7" id="c-fr-0007]
    7. Interference filter according to any one of claims 1 to 6, in which the second dielectric material is chosen from the group comprising silicon dioxide (SiCl · ), Magnesium fluoride (MgF2), silicon oxide (SiO x ), silicon oxynitride (SiO x Ny), hafnium oxide (HfO x ), aluminum oxide (A1O X ), a film based on aluminum, oxygen and nitrogen (A10 x Ny), a film based on silicon, oxygen, carbon and nitrogen (SiO x CyN z ), silicon nitride (SiN x ) and mixtures of at least two of these compounds.
    [8" id="c-fr-0008]
    8. Image sensor (50; 55; 60; 65) comprising the interference filter according to any one of claims 1 to 7 and wherein the interference filter (20) comprises a first elementary filter (F] _) comprising the first portion (P] _) and the third portion (P '] _) and a second elementary filter (F] _) comprising the second portion (P2) ·
    [9" id="c-fr-0009]
    9. An image sensor according to claim 8, in which the sensor is a color image sensor, in which the first elementary filter (F] _) is a bandpass filter centered on a first wavelength and in which the second elementary filter (F2) is a bandpass filter centered on a second wavelength.
    [10" id="c-fr-0010]
    10. The image sensor according to claim 8, in which the sensor is a color image sensor, in which the first elementary filter (F] _) is a bandpass filter centered on a third wavelength for a radiation at a first incidence relative to the interference filter (20) and in which the second elementary filter (F2) is a bandpass filter centered on the third wavelength to within 1% for radiation at a second incidence relative to to the interference filter (20).
    [11" id="c-fr-0011]
    11. Method for manufacturing an interference filter (20) according to any one of claims 1 to 10, comprising the following successive steps:
    B15606 - DD17641JB
    a) depositing a first dielectric layer (¾) of the first dielectric material or of the first dielectric materials on the first interface layer (CI] _);
    b) etching the first dielectric layer to remove the first dielectric layer at the first location and store the first layer at the second location;
    c) depositing a second layer (C2) of the first dielectric material or of the first dielectric materials on the first interface layer at the first location and on the
    First dielectric layer at the second location; and
    d) formation of the third portion (P '] _) on the second layer at the first location.
    [12" id="c-fr-0012]
    12. The method of claim 11, wherein step d) comprises the following steps:
    [13" id="c-fr-0013]
    Depositing a third dielectric layer (30) of the second dielectric material on the second layer (C2); and etching the third dielectric layer until the second dielectric layer (C2) is reached at the second location.
    [14" id="c-fr-0014]
    13. The method of claim 12, wherein the etching of the third dielectric layer (30) comprises a chemical mechanical polishing step.
    B 15606
    1/7
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    EP3376267A1|2018-09-19|
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    法律状态:
    2018-03-29| PLFP| Fee payment|Year of fee payment: 2 |
    2018-09-21| PLSC| Search report ready|Effective date: 20180921 |
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1752067A|FR3064083B1|2017-03-14|2017-03-14|INTERFERENTIAL FILTER|
    FR1752067|2017-03-14|FR1752067A| FR3064083B1|2017-03-14|2017-03-14|INTERFERENTIAL FILTER|
    EP18161331.6A| EP3376267B1|2017-03-14|2018-03-12|Interference filter|
    US15/920,349| US10948641B2|2017-03-14|2018-03-13|Interference filter|
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