• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a method for the creation of nanometric structures by self-assembly of block copolymers of which at least one of the blocks is crystallizable or has at least one liquid crystal phase.
    公开号:FR3014888A1
    申请号:FR1362597
    申请日:2013-12-13
    公开日:2015-06-19
    发明作者:Muhammad Mumtaz；Karim Aissou；Cyril Brochon；Eric Cloutet；Guillaume Fleury；Georges Hadziioannou；Christophe Navarro；Celia Nicolet；Xavier Chevalier
    申请人:Centre National de la Recherche Scientifique CNRS；Arkema France SA；Universite des Sciences et Tech (Bordeaux 1)；Institut Polytechnique de Bordeaux；
    IPC主号:
    专利说明:

    [0001] The invention relates to a process for the creation of nanometric structures by the self-assembly of block copolymers of which at least one of the blocks is crystallizable or present in the nanoparticles. less a liquid crystal phase.
    [0002] The invention also relates to the use of these materials in the fields of lithography (lithography masks), the storage of information but also the production of porous membranes or as a catalyst support. The invention also relates to the block copolymer masks obtained according to the method of the invention. The development of nanotechnologies has made it possible to constantly miniaturize products in the field of microelectronics and microelectromechanical systems (MEMS) in particular. Today, conventional lithography techniques no longer meet these needs for miniaturization, because they do not allow to achieve structures with dimensions less than 60nm.
    [0003] It was therefore necessary to adapt the lithography techniques and to create engraving masks which make it possible to create smaller and smaller patterns with a high resolution. With block copolymers it is possible to structure the arrangement of the constituent blocks of the copolymers, by phase segregation between the blocks thus forming nano-domains, at scales of less than 50 nm. Because of this ability to nanostructure, the use of block copolymers in the fields of electronics or optoelectronics is now well known. Among the masks studied to achieve nanolithography, block copolymer films, in particular Polystyrene-Poly (methyl methacrylate), noted below PS-b-PMMA, appear as very promising solutions because they allow to create patterns with a strong resolution. In order to use such a block copolymer film as an etch mask, a block of the copolymer must be selectively removed to create a porous film of the residual block, the patterns of which can be subsequently transferred by etching to an underlying layer. With respect to the PS-b-PMMA film, the minority block, that is, PMMA (Poly (methyl methacrylate)), is selectively removed to create a residual PS (Polystyrene) mask. To create such masks, the nano-domains must be oriented perpendicular to the surface of the underlying layer. Such a structuring of the domains requires particular conditions such as the preparation of the surface of the underlying layer, but also the composition of the block copolymer. The ratios between the blocks make it possible to control the shape of the nano-domains and the molecular mass of each block makes it possible to control the dimension of the blocks. Another very important factor is the phase segregation factor, also referred to as the FloryHuggins interaction parameter and denoted "x". This parameter makes it possible to control the size of the nano domains. More particularly, it defines the tendency of blocks of the block copolymer to separate into nano-domains. Thus, the XN product of the degree of polymerization, N, and the Flory-Huggins parameter x, give an indication of the compatibility of two blocks and whether they can separate. For example, a di-block copolymer of symmetrical composition separates into micro-domains if the product XN is greater than 10. If this product XN is less than 10, the blocks mix and the phase separation is not observed. Due to the constant need for miniaturization, it is sought to increase this degree of phase separation, in order to produce nano-lithography masks making it possible to obtain very high resolutions, typically less than 20 nm, and preferably less than 10 nm. In Macromolecules, 2008, 41, 9948, Y. Zhao et al. Estimated the Flory-Huggins parameter for a PS-b-PMMA block copolymer. The parameter Flory-Huggins x obeys the following relation: x = a + b / T, where the values a and b are constant specific values depending on the nature of the blocks of the copolymer and T is the temperature of the heat treatment applied to the block copolymer to enable it to organize, i.e., to achieve phase separation of domains, domain orientation and reduction of the number of defects. More particularly, the values a and b respectively represent the entropic and enthalpic contributions. Thus, for a PS-b-PMMA block copolymer, the phase segregation factor obeys the following relationship: X 0.0282 + 4.46 / T. Therefore, even if this block copolymer makes it possible to generate domain sizes slightly smaller than 20 nm, it does not make it possible to go much lower in terms of domain size, because of the low value of its interaction parameter. This low value of the FloryHuggins interaction parameter therefore limits the interest of PS and PMMA-based block copolymers for producing structures with very high resolutions. To circumvent this problem, MD Rodwogin et al, ACS Nano, 2010, 4, 725, have demonstrated that the chemical nature of the two blocks of the block copolymer can be changed to greatly increase the Flory-Huggins parameter. x and obtain a desired morphology with a very high resolution, that is to say the size of the nano-domains is less than 20nm. These results have been demonstrated in particular for a triblock copolymer of PLA-b-PDMS-b-PLA (polylactic acid-polydimethylsiloxane-polylactic acid). H. Takahashi et al., Macromolecules, 2012, 45, 6253, investigated the influence of the Flory-Huggins x interaction parameter on the copolymer assembly and defect reduction kinetics in the copolymer. They demonstrated in particular that when this parameter x becomes too large, there is generally a significant slowdown in the kinetics of assembly, the kinetics of phase segregation also causing a slowing down of the kinetics of decrease in defects at the time of application. organization of domains. Another problem, reported by S. Ji et al., ACS Nano, 2012, 6, 5440, arises also when one considers the kinetics of organization of the block copolymers containing a plurality of blocks all chemically different from each other. other. Indeed, the diffusion kinetics of the polymer chains, and hence also the kinetics of organization and decrease of defects within the self-assembly structure, depend on the segregation parameters x between each of the different blocks. In addition, these kinetics are also slowed down because of the multi-block nature of the copolymer, since the polymer chains then have lower degrees of freedom to organize with respect to a block copolymer having fewer blocks. US 8304493 and US 8450418 disclose a process for modifying block copolymers as well as modified block copolymers. These modified block copolymers have a modified Flory-Huggins x interaction parameter value, such that the block copolymer has small nano domains. Since the PS-b-PMMA block copolymers already make it possible to reach dimensions of the order of 20 nm, the applicant has sought a solution for modifying this type of block copolymer in order to obtain a good compromise on the Flory-Huggins x interaction parameter, velocity and temperature of self-assembly. Surprisingly, it has been discovered that a block copolymer, of which at least one of the blocks is crystallizable or exhibiting at least one liquid crystal phase, has the following advantages when deposited on a surface: - A kinetic of rapid self-assembly (between 1 and 20 minutes) for low molecular weights leading to domain sizes well below 10 nm, and at low temperatures (between 373K and 603K). the orientation of the domains during the self-assembly of such block copolymers does not require any preparation of the support (no neutralization layer), the orientation of the domains being governed by the thickness of the copolymer film at blocks deposited.
    [0004] Thus these materials show a very great interest for nano-lithography applications for the production of etching masks of very small dimensions and having a good contrast to the etching as well as the production of porous membranes or as a catalyst support. SUMMARY OF THE INVENTION The invention relates to a nano-structured assembly process using a composition comprising a block copolymer of which at least one of the blocks is crystallizable or has at least one liquid crystal phase and comprising the following steps: in solution of the block copolymer in a solvent. -Deposit of this solution on a surface. -Recuit. Detailed Description: Surface refers to a surface that may be flat or non-planar. Annealing means a heating step at a certain temperature allowing evaporation of the solvent when it is present, and allowing the establishment of the desired nanostructuration in a given time (self-assembly). Annealing also means establishing the nano-structuring of the block copolymer film when said film is subjected to a controlled atmosphere of solvent vapor (s), these vapors giving the polymer chains sufficient mobility for organize themselves on the surface. Annealing also means any combination of the two methods mentioned above. Any block copolymer, whatever its associated morphology, may be used in the context of the invention, be it diblock copolymer, linear or star triblock, linear multiblock, comb or as a star, provided that at least blocks of the block copolymer is crystallizable or has at least one liquid crystal phase. Preferably, these are diblock or triblock copolymers, and more preferably diblock copolymers. They may be synthesized by any techniques known to those skilled in the art among which polycondensation, ring-opening polymerization, anionic, cationic or radical polymerization may be mentioned, these techniques being able to be controlled or not. When the copolymers are prepared by radical polymerization, they may be controlled by any known technique such as NMP ("Nitroxide Mediated Polymerization"), RAFT ("Reversible Addition and Fragmentation Transfer"), ATRP ("Atom Transfer Radical Polymerization") , INIFERTER ("Initiator-Transfer-Termination"), RITP ("Reverse Iodine Transfer Polymerization"), ITP ("Iodine Transfer Polymerization) .By crystallizable block or having at least one liquid crystal phase, is meant a block having at least one measurable transition temperature by differential enthalpic analysis, whether it is a crystal-> smectic, smectic-> nematic, nematic-> isotropic, or isotropic liquid crystal-> transition.
    [0005] The block copolymer having a liquid crystal block may be a block copolymer having a lyotropic or thermotropic block.
    [0006] The block copolymer having a crystallizable block may be block copolymer having a crystalline or semi-crystalline block. The crystallizable blocks or having at least one liquid crystal phase may be of any type but preferably they will be chosen so that the Flory-Huggins x parameter of the block copolymer is between 0.01 and 100 and preferably between 0.04 and 25. .
    [0007] The blocks which are not crystallizable or do not exhibit a liquid crystal phase consist of the following monomers: at least one vinyl, vinylidene, diene, olefinic, allylic or (meth) acrylic or cyclic monomer. These monomers are chosen more particularly from vinylaromatic monomers such as styrene or substituted styrenes, especially alpha-methylstyrene, and acrylic monomers such as alkyl, cycloalkyl or aryl acrylates, such as methyl acrylate, dicyclohexyl acrylate and the like. ethyl, butyl, ethylhexyl or phenyl, ether alkyl acrylates such as 2-methoxyethyl acrylate, alkoxy- or aryloxypolyalkyleneglycol acrylates such as methoxypolyethylene glycol acrylates, ethoxypolyethylene glycol acrylates and the like. methoxypolypropylene glycol acrylates, methoxypolyethylene glycol acrylate-polypropylene glycol acrylates or mixtures thereof, aminoalkyl acrylates such as 2- (dimethylamino) ethyl acrylate (ADAME), fluorinated acrylates, phosphorus acrylates such as phosphate acrylates alkylene glycol, glycidyl acrylates, dicyclopentenyloxyethyl acrylates, alkyl methacrylates, cycloalkyl methacrylates, alkenyl or aryl such as methyl methacrylate (MMA), lauryl, cyclohexyl, allyl, phenyl or naphthyl, ether alkyl methacrylates such as 2-ethoxyethyl methacrylate, alkoxy methacrylates or aryloxy-polyalkylene glycol such as methoxypolyethylene glycol methacrylates, ethoxypolyethylene glycol methacrylates, methoxypolypropylene glycol methacrylates, methoxy-polyethylene glycol-polypropylene glycol methacrylates or mixtures thereof, aminoalkyl methacrylates such as 2- (dimethylamino) methacrylate ethyl (MADAME), fluorinated methacrylates such as 2,2,2-trifluoroethyl methacrylate, silylated methacrylates such as 3-methacryloylpropyltrimethylsilane, phosphorus methacrylates such as alkylene glycol phosphate methacrylates, hydroxyl methacrylate, ethylimidazolidone, hydroxyethylimidazolidinone methacrylate, methacrylate 2- (2-oxo-limidazolidinyl) ethyl, acrylonitrile, acrylamide or substituted acrylamides, 4-acryloylmorpholine, N-methylolacrylamide, methacrylamide or substituted methacrylamides, N-methylolmethacrylamide, methacrylamido chloride, propyltrimethylammonium (MAPTAC), glycidyl, dicyclopentenyloxyethyl methacrylates, maleic anhydride, alkyl or alkoxy- or aryloxypolyalkyleneglycol maleates or hemimaleate, vinylpyridine, vinylpyrrolidinone, (alkoxy) poly (alkylene glycol) vinyl ether or divinyl ether, such as methoxy poly (ethylene glycol) vinyl ether, poly (ethylene glycol) divinyl ether, olefinic monomers, among which mention may be made of ethylene, butene, hexene and ocene, dienic monomers including butadiene, isoprene and fluorinated olefinic monomers, vinylidene monomers, among which mention may be made of vinylidene fluoride, monomers cyclic enzymes among which may be mentioned lactones such as ε-caprolactone, lactides, glycolides, cyclic carbonates such as trimethylenecarbonate, siloxanes such as octamethylcyclotetrasiloxane, cyclic ethers such as trioxane, cyclic amides such as e-caprolactone, caprolactam, cyclic acetals such as 1,3-dioxolane, phosphazenes such as hexachlorocyclotriphosphazene, N-carboxyanhydrides, phosphorus cyclic esters such as cyclophosphorinans, cyclophospholanes, oxazolines, the protected case to be compatible with the methods of anionic polymerization, alone or as a mixture of at least two aforementioned monomers.
    [0008] Preferably, the non-crystallizable or non-liquid crystal-containing blocks comprise methyl methacrylate in mass proportions greater than 50% and preferably greater than 80% and more preferably greater than 95%.
    [0009] Once the block copolymer is synthesized, it is dissolved in a suitable solvent and then deposited on a surface according to techniques known to those skilled in the art such as the so-called "spin coating" technique, "Doctor Blade" "knife system", "Slot die system" but any other technique can be used such as a dry deposit, that is to say without going through a prior dissolution. Thus films less than 100 nm thick are obtained.
    [0010] Preferred surfaces include silicon, silicon having a native or thermal oxide layer, hydrogenated or halogenated silicon, germanium, hydrogenated or halogenated germanium, platinum and platinum oxide, tungsten and oxides, gold, titanium nitrides, graphenes. Preferably the surface is mineral and more preferably silicon. Even more preferably, the surface is silicon having a native or thermal oxide layer.
    [0011] Note that in the context of the present invention, even if it is not excluded, it is not necessary to perform a neutralization step (as is generally the case in the prior art) by the use of randomly chosen random copolymer. This has a considerable advantage because this neutralization stage is penalizing (synthesis of the statistical copolymer of particular composition, deposit on the surface). The orientation of the block copolymer is defined by the thickness of the deposited block copolymer film. It is obtained in relatively short times, between 1 and 20 minutes inclusive and preferably between 1 and 5 minutes and at temperatures between 373 and 603 Kelvin and preferably between 373 and 403 K.
    [0012] The method of the invention is advantageously applicable to the field of nano-lithography using block copolymer masks, or more generally in the field of nanostructuring of surfaces for electronics.
    [0013] The process of the invention also allows the manufacture of porous membranes or catalyst supports for which one of the domains of the block copolymer is degraded to obtain a porous structure.
    [0014] Example 1 Synthesis of Poly (1,1-dimethyl-silacyclobutane) -block-PMMA (PDMSB-b-PMMA) The synthesis is carried out by sequential anionic polymerization in a 50/50 vol / vol THF / heptane mixture at 50 ° C. with the secondary butyl lithium initiator (sec-BuLi). Such a synthesis is well known to those skilled in the art. A first block is prepared according to a protocol described by Yamaoka et al., Macromolecules, 1995, 28, 7029-7031.
    [0015] The next block is constructed in the same way by sequentially adding the MMA, with a 1,1-diphenyl ethylene addition step to allow control of the reactivity of the active center.
    [0016] Typically, in a dry 250 ml flask equipped with a magnetic stirrer, lithium chloride (85 mg), 20 ml of THF and 20 ml of heptane are introduced. The solution is cooled to -50 ° C. 0.00025 moles of sec-BuLi are then introduced, followed by addition of 0.01 moles of 1,1-dimethylsilacyclobutane. The reaction mixture is stirred for 1 h and then 0.2 ml of 1,1-diphenyl ethylene is added. After 30 minutes, 0.0043 moles of methyl methacrylate are added and the reaction mixture is stirred for one hour. The reaction is terminated by addition of degassed methanol at -50 ° C. The reaction medium is then concentrated by evaporation followed by methanol precipitation. The product is then recovered by filtration and dried in an oven at 35 ° C overnight.
    [0017] Examples 2. Synthesis of Poly (1-butyl-1-methylsilacyclobutane) -b-Poly (methyl methacrylate).
    [0018] This copolymer is prepared according to the protocol of Example 1 by varying the amounts of reagents and using 1-butyl-1-methyl silacyclobutane (BMSB). The molecular masses and the dispersions corresponding to the ratio between the weight-average molecular mass (Mw) and the number-average molecular mass (Mn), are obtained by SEC (Size Exclusion Chromatography), by using 2 columns in series AGILENT 3pm ResiPore, in stabilized THF medium to BHT at a flow rate of 1 mL / min at 40 ° C with concentrated samples at 1 g / L, with prior calibration with calibrated polystyrene samples using a prepared Easical PS-2 pack. The results are given in Table 1: Table 1 copolymer Example Mn SEC (g / mol) dry BuLi mole DMSB or BMSB mole MMA Composition polysiletane / PMMA (% massinual Dispersibility Mw / Mn PDMSB49-b-PMMA17 1 (invention) 6600 0 , 00025 0.01 0.0043 74/26 1.08 pBMsB _b _pmm A 2 (Comparative) 7150 0.00025 0.0067 0.01 63/37 1.10 The films of Examples 1 and 2 were prepared by spin coating from 1.5% by weight solution in toluene and the thickness of the film was controlled by varying the spin-coating speed (1500 to 3000 rpm, typically less than 100 nm.) The promotion of self-assembly The phase segregation between blocks of the copolymer was obtained by short annealing (5 min) on a 453 K hot plate.
    [0019] While the copolymer of Example 1 has a clearly visible phase transition by DSC (Figure 1), the copolymer of Example 2 shows no transition, behaving amorphously (Figure 2).
    [0020] The copolymer 1 has a self-assembly visible in FIG. 3, whereas the copolymer 2 has no self-assembly (FIG. 4).
    [0021] FIG. 1 is a DSC of the copolymer 1 during a heating-cooling-heating cycle under nitrogen at 10 ° C./min. The data presented represents cooling and the second heating.
    [0022] Figure 2 is a DSC of copolymer 2 during a heating-cooling-heating cycle under nitrogen at 10 ° C / min. The data presented represents cooling and the second heating.
    [0023] FIG. 3 is a photograph taken under AFM microscopy of a thin film self-assembly with a thickness less than 100 nm of the block copolymer of Example 1 having cylinders oriented perpendicularly to the substrate. Scale 100 nm.
    [0024] FIG. 4 is a photograph taken by AFM microscopy and shows the absence of self-assembly of the copolymer of Example 6 in a thin film of thickness less than 100 nm, the lines are the guides used to promote self-assembly. in graphoepitaxy. Scale 100 nm.30
    权利要求:
    Claims (2)
    [0001]
    CLAIMS nano-structured assembly process using a composition comprising a block copolymer of which at least one of the blocks is crystallizable or has at least one liquid crystal phase and comprising the following steps: - Solution of the block copolymer in a solvent . -Deposit of this solution on a surface. 10 -ReCuit.
    [0002]
    The process of claim 1 wherein the block copolymer is a diblock copolymer. The process of claim 1 wherein the block copolymer has a crystallizable block. The method of claim 1 wherein the block having a liquid crystal phase is lyotropic. The method of claim 1 wherein the block having a liquid crystal phase is thermotropic. The process of claim 1 wherein the orientation of the block copolymer is for a time of between 1 and 20 minutes inclusive. The process of claim 1 wherein the orientation of the block copolymer is at a temperature of from 373 to 603K. The process of claim 1 wherein the orientation of the block copolymer is carried out under a controlled atmosphere comprising solvent vapors, or a combination of solvent / temperature atmosphere. 9 Use of the method according to one of claims 1 to 8 5 in the field of lithography or more generally in the field of nanostructuring of surfaces for electronics. Mask of block copolymers obtained according to the process of one of Claims 1 to 8.
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    法律状态:
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1362597A|FR3014888B1|2013-12-13|2013-12-13|PROCESS FOR CREATING NANOMETRIC STRUCTURES BY SELF-ASSEMBLING BLOCK COPOLYMERS|FR1362597A| FR3014888B1|2013-12-13|2013-12-13|PROCESS FOR CREATING NANOMETRIC STRUCTURES BY SELF-ASSEMBLING BLOCK COPOLYMERS|
    JP2016538584A| JP6404353B2|2013-12-13|2014-12-11|A method that enables fabrication of nanometer structures by self-assembly of block copolymers|
    US15/103,740| US20160333221A1|2013-12-13|2014-12-11|Process that enables the creation of nanometric structures by self-assembly of block copolymers|
    CN201480068285.0A| CN105980494A|2013-12-13|2014-12-11|Method allowing the creation of nanometric structures by self-assembly of block copolymers|
    SG11201604777YA| SG11201604777YA|2013-12-13|2014-12-11|Method allowing the creation of nanometric structures by self-assembly of block copolymers|
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    PCT/FR2014/053279| WO2015087005A1|2013-12-13|2014-12-11|Method allowing the creation of nanometric structures by self-assembly of block copolymers|
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