• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a device for positioning a mask (10) relative to the surface of a wafer (11) for the purpose of insolation of said wafer (11), which comprises (i) first positioning means (20) capable of maintaining and moving said mask (10) and said wafer (11) relative to each other, (ii) imaging means (20, 22, 23, 30) capable of producing at least one image of the mask (10) and the surface of the wafer (11) according to at least one field of view (14), so as to simultaneously image in said field of view (14) positioning marks (12, 13) of said mask (10) and said wafer (11), and (iii) at least one optical distance sensor (26) capable of producing a distance measurement between the surface of the wafer (11) and the mask (10) in the one or more fields. (s) (14), with a measuring beam (15, 28) which passes through at least part of the imaging means. The invention also relates to a method implemented in this device and an apparatus.
    公开号:FR3014212A1
    申请号:FR1362065
    申请日:2013-12-04
    公开日:2015-06-05
    发明作者:Gilles Fresquet；Guenael Ribette
    申请人:Fogale Nanotech SA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The present invention relates to a device for positioning a photolithography mask with respect to the surface of a wafer, in order to perform irradiation operations. wafer or substrate, in photolithography mode 10 contact / proximity including. It also relates to an apparatus comprising such a device, and a method implemented in this device or this device. The field of the invention is more particularly, but not exclusively, that of steppers and photolithography insolation systems. STATE OF THE PRIOR ART Photolithography techniques require insolation operations of the wafers during the process. The wafer to be treated comprises a layer to be etched, covered with a photosensitive layer called "resist". A mask with transparent parts and opaque parts is positioned above the surface of the wafer. Then the surface of the wafer is illuminated or insolated through the mask with light usually in ultraviolet (UV) wavelengths. In the transparent parts of the mask, the light reaches the wafer and modifies the properties of the photosensitive layer. After a chemical treatment step, the portions of the resist layer located in the insolated areas or in the protected areas according to the process (positive or negative resin), are eliminated to allow the selective etching of the exposed parts of the layer to be resisted. engrave. These operations can be repeated many times during a process. The mask must therefore be positioned with great precision with respect to the surface of the wafer, so that the optical path of the irradiation radiation is perpendicular and equal over the entire wafer or substrate, which generally comprises already existing structures. . The positioning in the X-Y plane (parallel to the plane of the wafer) is generally carried out by superimposing patterns (reticles, crosses, etc.) present on the mask with patterns already engraved on the surface of the wafer. The mask must be positioned at a distance to achieve this alignment without altering the photosensitive resin layer by contact. The mask must then also be positioned at a constant distance Z and very precise with respect to the surface of the wafer, and that over its entire surface. This makes it possible to control the diffraction of the light passing through the mask. Indeed, this diffraction directly determines the precision and the resolution with which the patterns of the mask can be reproduced on the wafer. Controlling this distance Z is all the more important if short wavelengths (UV or Deep UV or extreme UV EUV) are used to precisely limit the effects of diffraction and maximize the spatial resolution of the engraving.
    [0002] The mask must not be in contact with the wafer. It is generally positioned at a distance Z of the order of 20 microns or less. In known contact / proximity insolation systems, the positioning of the masks is carried out with microbeads or cylinders, made of ceramic, of calibrated diameter which act as shims. These 20 microbeads or shims are integral with movable elements can be inserted between the mask and the wafer, then the whole is pressed. This technique has a number of disadvantages: - it leads to complex systems; - the mechanical contact is likely to alter the surfaces in contact; The control of the positioning in the X-Y plane and in the distance Y of the mask is complex, since the surfaces must be pressed on either side of the shims only when the X-Y positioning is carried out; the accuracy of the thickness control is not always sufficient; it is not possible to reduce the distance Z below a certain limit, which is nevertheless desirable to limit the diffraction. The object of the present invention is to propose a device and a method for positioning a mask with respect to a wafer to be insolated, which makes it possible to solve the disadvantages of the prior art. Another object of the present invention is to provide a device and a method for positioning a mask with respect to a wafer or an insoling substrate which allows positioning without mechanical contact with the surface of the wafer. Finally, the object of the present invention is to propose a device and a method for positioning a mask with respect to a wafer or an insolating substrate which makes it possible to precisely position the mask at a very small distance from the wafer. SUMMARY OF THE INVENTION This object is achieved with a device for positioning a mask relative to the surface of a wafer with a view to insolation of said wafer, comprising first positioning means capable of holding and moving the one by relative to the other said mask and said wafer, characterized in that it further comprises: - imaging means, capable of producing at least one image of the mask and the surface of the wafer according to at least one field of view in such a way as to simultaneously image in said field of view positioning marks of said mask and said wafer, and - at least one distance optical sensor, able to produce a distance measurement between the surface of the wafer and the mask in the or said field of view (s) with a measuring beam which at least partially passes through the imaging means. According to embodiments, the device according to the invention may further comprise second positioning means able to move the field (s) of view relative to the surface of the wafer. According to embodiments, the device according to the invention may comprise imaging means capable of simultaneously producing at least three images according to three fields of view. It can include at least three optical distance sensors. According to embodiments, the device according to the invention may comprise at least one optical distance sensor of one of the following types: - confocal sensor, - confocal chromatic sensor, - low coherence interferometer (temporal, spectral, to frequency scanning), -reflectometer, -4- - laser interferometer. According to embodiments, the device according to the invention may comprise at least one distance sensor which is furthermore capable of producing at least one of the following measurements: a thickness measurement of the resist layer; reflectivity measurement of the layer to be etched present under the resist layer. In another aspect, there is provided a wafer insolation apparatus, comprising a device according to the invention for positioning a mask 10 relative to the surface of a wafer. According to yet another aspect, there is provided a method for positioning a mask relative to the surface of a wafer for the purpose of insolation of said wafer, implementing first positioning means able to hold and move the one by said mask and said wafer, which method comprises steps of: - obtaining at least one image of the mask and the surface of the wafer according to at least one field of view, so as to image simultaneously in said field of view positioning markings of said mask and said wafer, for obtaining, with at least one optical distance sensor and a measuring beam which at least partly passes through the imaging means, at least in part a distance measurement between the surface of the wafer and the mask in the field (s) of view. The method according to the invention may furthermore comprise a step of relative movement of the mask and / or the wafer so as to, in at least one field of view: - superimpose positioning marks of the mask and the wafer, - obtain a measurement of distance between the surface of the wafer and the mask that conforms to a predefined value. According to embodiments, the method according to the invention may comprise a step of simultaneously obtaining at least three images according to three fields of view. The method according to the invention may further comprise a step of measuring, with the optical distance sensor, at least one of the following quantities: the thickness of the resist present on the wafer; reflectivity of the layer to be etched present under the resist, from the signal picked up by said optical distance sensor. DESCRIPTION OF THE FIGURES AND EMBODIMENTS Other advantages and particularities of the invention will appear on reading the detailed description of implementations and non-limiting embodiments, and the following appended drawings: FIG. 1 illustrates the problem of positioning a mask relative to a wafer, with FIG. 1 (a) a front view and in FIG. 1 (b) a side view, - FIG. 2 illustrates an embodiment of the device according to the invention. It is understood that the embodiments which will be described in the following are in no way limiting. It will be possible to imagine variants of the invention comprising only a selection of characteristics subsequently described isolated from the other characteristics described, if this selection of characteristics is sufficient to confer a technical advantage or to differentiate the invention with respect to the state of the prior art. This selection comprises at least one preferably functional feature without structural details, or with only a portion of the structural details if that portion alone is sufficient to provide a technical advantage or to differentiate the invention from the prior art . In particular, all the variants and all the embodiments described are combinable with each other if nothing stands in the way of this combination 25 technically. In the figures, the elements common to several figures retain the same reference. With reference to FIG. 1, the invention is intended to be implemented in an insolation system used in photolithography in particular, and usually called "stepper". Such a system comprises a wafer support, or chuck, in which a wafer 11 covered with photosensitive material can be fixed. It also comprises a mask support in which a mask 10 can be positioned facing the wafer 11. This mask 10 comprises a transparent plate (generally made of quartz) on which are deposited patterns made of an opaque material (in general chromium). It therefore includes transparent areas and opaque areas. Once the mask 10 is positioned correctly relative to the wafer 11, the assembly is irradiated with ultraviolet light. Thus, only the apparent photosensitive material in the transparent areas of the mask is affected. This allows to engrave on the wafer 11 patterns that are used to constitute electronic or optical components in particular. Since the processing of a wafer can comprise a large number of successive insolation and etching operations, it is very important to correctly position the mask 10 with respect to the patterns already existing on the surface of the wafer 11. As explained above, this positioning must be carried out in the plane of the wafer (in XY), in translation and in rotation. For this, the mask comprises particular patterns or patterns 12, which must be aligned with other patterns 13 already engraved on the wafer 11. In order to optimize the resolution, the mask 10 and the wafer 11 must also be positioned precisely relative to each other according to their normal (Z), so as to be well parallel and separated by a distance according to a set value. The invention allows precisely these alignments, simultaneously, and without contact. With reference to FIG. 2, the device according to the invention comprises imaging means. These imaging means make it possible to image the mask 10 and the wafer 11 (through the transparent parts of the mask 10) according to a field of view 14. The imaging means comprise a light source 20 and collimation means (Lenses, ...), which make it possible to generate an illumination beam 21 in order to illuminate the field of view 14. The light source 20 may for example comprise a halogen lamp which emits light in the lengths of the light. visible waves. The imaging means also comprise a camera 22 with a matrix detector 23, which may be for example of the CCD type. They also comprise optical means (lenses,...) Which make it possible to form an image of the field of view 14 on the matrix detector 23, starting from the light 24 reflected or backscattered by the mask 10 and the wafer 11. The imaging means are positioned such that the optical axis 29 of the illumination and imaging is substantially perpendicular to the plane 5 of the mask 10 and the wafer 11. The imaging is carried out in reflection or in backscatter. The device according to the invention also comprises an optical distance sensor 26. This sensor generates a measuring beam 28 which is inserted by means of a collimator 25 into the imaging optical system. This measurement beam passes through the distal objective 30 of the imaging means to form a measurement spot 15 in the field of view 14. It thus makes it possible to measure the distance between the mask 10 the wafer 11, or more precisely the distance between the facing faces of the mask 10 and wafer 11. This measurement is 15 punctual, or at least performed at a point or in a small neighborhood 15 field of view 14. The various beams (measurement, imaging, .. .) are combined and / or separated in the optical system by means of elements such as separator cubes, semi-reflective plates, ... according to techniques well known to those skilled in the art. The distance sensor 26 implements a measurement technique based on low coherence interferometry in the spectral domain. The light of a broad-spectrum optical source is fed by an optical fiber 27 to the collimator 25. The reflections on the surfaces of the mask 10 and the wafer 11 25 of this light coming from the distance sensor 26 are collected by this same collimator 25. and analyzed in a spectrometer. A crenellated spectrum is thus obtained in which the optical wavelengths for which the reflections on the faces of the mask 10 and the wafer 11 are in phase correspond to maxima. An analysis of this spectrum makes it possible to deduce precisely the distance between the mask 10 and the wafer 11. The device according to the invention also comprises first positioning means 20 which make it possible to hold and move the wafer 11 and the mask 10. one with respect to the other. These positioning means may comprise any suitable mechanical system, such as elements 35 for translation, rotation, rocking. The device according to the invention also comprises second positioning means (not shown) which make it possible to move the field of view 14 on the surface of the mask 10 and the wafer 11. These second positioning means comprise translation plates which make it possible to move the set of imaging means in the XY plane of the mask, so as to be able to position the field of view 14 in any surface position of the mask 10 and wafer 11. According to alternative embodiments, any type of optical sensor of suitable distance can be used to measure the distance 10 between the mask 10 and the wafer 11. It may be mentioned in particular: - sensors using low frequency coherence interferometry techniques with a tunable laser source and an antenna spectral lysis performed sequentially; sensors employing low coherence interferometry techniques in the time domain, with a delay line for reproducing the optical delay between the signals originating from the reflections on the surfaces of the mask 10 and the wafer 11 in particular; confocal chromatic sensors, in which the position in a measuring range is coded in wavelength by means of a dispersive optical element (for example at the collimator 25) which introduces chromatic aberration. The position of the interfaces (of the mask 10 and the wafer 11) can thus be deduced from a spectral analysis of the reflected signal; confocal sensors, in which the position of the interfaces is determined from the detection of the intensity maxima of the light reflected during a depth scan (in Z) of the focusing point of the measuring beam 15; sensors based on laser interferometry techniques. According to alternative embodiments, the device according to the invention may comprise third positioning means which make it possible to move the position of the measuring point 15 of the distance sensor in the field of view 14 of the imaging means. These third positioning means may for example comprise means for moving the measuring collimator 25. According to alternative embodiments, the first and second positioning means may be made by the same elements, or comprise elements in common. According to alternative embodiments, the second positioning means which make it possible to move the field of view 14 on the surface of the mask 10 and the wafer 11 can be made by, or include, moving elements (reflecting mirrors, etc.). .) inserted in the optical imaging means. According to alternative embodiments, the device according to the invention may comprise a plurality of optical imaging systems as shown in FIG. 2, and second positioning means for independently positioning the fields of view of each of these optical imaging systems on the surface of the mask 10. In particular, the device according to the invention can comprise three optical imaging systems, this makes it possible to adjust the relative positions of the wafer 11 and the mask 10 in three positions simultaneously and thus simultaneously cover all the degrees of freedom. According to embodiments, the device according to the invention may comprise optical switching means (moving mirrors, ...) 20 for sequentially imaging several fields of view 14 positioned at different positions with the same imaging system. The alignment of a mask 10 and a wafer 11 with a device according to the invention comprises the following steps: the mask 10, the wafer 11 and the field of view 14 are positioned so that the marks 12 of the mask 10 to be matched or superimposed with the markers 13 of the wafer 11 are visible in the same field of view 14. - the wafer 11 and the mask 10 are moved relative to each other in the XY plane of such as to match the markers 12 of the mask and the markers 13 of the wafer. the position of the field of view 14 and / or the position 15 of the measurement beam in the field of view 14 are adjusted so that the measurement beam passes through a transparent part of the mask 10. The distance according to FIG. Z axis between the wafer 11 and the mask 10 is measured and adjusted to its set value by moving the wafer 11 relative to the mask 10. - These measurement and positioning operations are performed 5 (sequentially or simultaneously) at several positions to the surface of the mask 10, for several marks 12. Indeed, it is necessary to perform them at least in two positions to adjust the rotation in the XY plane of the wafer 11 relative to the mask 10, and three positions to adjust the distance between the wafer 11 and the mask 10, so that the wafer 11 and the mask 10 are well parallel and separated by the desired distance. Preferably, therefore, these measurement and positioning operations are performed at three positions on the surface of the mask 10, or at four positions to obtain a redundant measurement. Thus, according to a particularly advantageous aspect of the invention, the wafer and the mask can be positioned very close to one another, at a distance of a few microns or a few tens of microns, without elements in mechanical contact with their surface. According to alternative embodiments, at least one of the distance sensors used may be further able to measure the thickness of the photosensitive layer, or resist layer. It is thus possible to measure the distance between the mask 10 and the wafer 11, or more precisely between the mask 10 and the upper surface of the resist present on the wafer 11, and the resist thickness present above the layer to be etched . This or these distance sensor (s) may also be able to perform a reflectivity measurement of the surface of the layer to be etched present on the wafer 11 below the resist layer. This embodiment can be implemented with all types of adapted distance sensors, in particular those mentioned above (confocal sensor, chromatic confocal sensor, low temporal coherence interferometer, spectral, frequency scanning, reflectometer, laser interferometer). , ...). The sensors must simply be implemented in suitable configurations for carrying out multilayer measurements, which are well known to those skilled in the art, and with measurement wavelengths able to penetrate the resist (in the near infrared by example).
    [0003] The measurement of the reflectivity can be obtained from the intensity of the reflected measurement signal. The measurements of the thickness of the resist and the reflectivity of the layer to be etched are necessary information to be able to adjust the energy (exposure time and / or power) to be applied during the insolation step. Thus, advantageously, the invention makes it possible to measure and adjust with a single system a set of essential parameters for insolation (the mask-wafer distance, the resist thickness and the reflectivity of the layer to be etched).
    [0004] In addition, it is possible to determine the distance between the mask 10 and the surface to be etched (including the thickness of the resist layer), and thus to adjust the distance between the surface of the wafer 11 and the mask 10 taking into account the thickness of the resist layer. According to a variant, the device according to the invention may comprise at least a second sensor, distinct from the optical distance sensor (s) 26, for measuring the thickness of the resist layer and / or the reflectivity of the layer. to engrave. This second sensor may also comprise a measuring beam which passes through at least part of the imaging means. It can be arranged in such a way as to make measurements in the field of view 14 of the imaging system. Of course, the invention is not limited to the examples that have just been described and many adjustments can be made to these examples without departing from the scope of the invention. 25
    权利要求:
    Claims (11)
    [0001]
    REVENDICATIONS1. Device for positioning a mask (10) relative to the surface of a wafer (11) for insolation of said wafer (11), comprising first positioning means (20) capable of holding and moving the one by relative to the other said mask (10) and said wafer (11), characterized in that it further comprises: - imaging means (20, 22, 23, 30), capable of producing at least one image of the mask (10) and the surface of the wafer (11) according to at least one field of view (14), so as to simultaneously image in said field of view (14) positioning marks (12, 13) of said mask (10) and said wafer (11), and - at least one distance optical sensor (26), able to produce a distance measurement between the surface of the wafer (11) and the mask (10) in the one or more fields ( s) (14) with a measuring beam (15, 28) which passes through at least part of the imaging means.
    [0002]
    2. The device of claim 1, which further comprises second positioning means adapted to move the field or fields of view (14) relative to the surface of the wafer (11).
    [0003]
    3. The device of one of claims 1 or 2, which comprises imaging means capable of simultaneously producing at least three images in three fields of view (14).
    [0004]
    4. The device of claim 3, which comprises at least three optical distance sensors (26). 30
    [0005]
    5. The device of one of the preceding claims, which comprises at least one optical distance sensor (26) of one of the following types: - confocal sensor, - confocal chromatic sensor, 35 - low coherence interferometer, -13 - - reflectometer, - laser interferometer.
    [0006]
    6. The device of one of the preceding claims, which comprises at least one distance sensor (26) which is furthermore capable of producing at least one of the following measures: a measurement of the thickness of the resist, a reflectivity measurement of the layer to be etched present under the resist layer. 10
    [0007]
    A wafer insolation apparatus comprising a device as claimed in any one of the preceding claims.
    [0008]
    8. A method for positioning a mask (10) relative to the surface 15 of a wafer (11) for insolation of said wafer (11), implementing first positioning means (20) able to maintain and moving said mask (10) and said wafer (11) relative to each other, characterized in that it comprises steps of: - obtaining at least one image of the mask (10) and the wafer surface (11) according to at least one field of view (14), so as to impart simultaneously in said field of view (14) positioning marks (12, 13) of said mask (10) and said wafer ( 11), - obtaining, with at least one optical distance sensor (26) and a measurement beam (15, 28) which passes through at least part of the imaging means, at least one distance measurement. between the surface of the wafer (11) and the mask (10) in the at least one field of view (14).
    [0009]
    9. The method of claim 8, which further comprises a step of relative movement of the mask (10) and / or the wafer (11) so as to, in at least one field of view (14): positioning marks (12, 13) of the mask (10) and the wafer (11), - obtaining a distance measurement between the surface of the wafer (10) and the mask (11) which conforms to a predefined value. 35-14-
    [0010]
    10. The method of one of claims 8 or 9, which comprises a step of simultaneously obtaining at least three images according to three fields of view (14).
    [0011]
    11. The method of one of claims 8 to 10, which further comprises a step of measuring, with the optical distance sensor (26), at least one of the following quantities: - the thickness of resist present on the wafer (11), the reflectivity of the layer to be etched present under the resist, from the signal sensed by said optical distance sensor (26).
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US6088103A|1995-05-31|2000-07-11|Massachusetts Institute Of Technology|Optical interference alignment and gapping apparatus|
    US20060110070A1|2004-11-23|2006-05-25|Picciotto Carl E|Multiple layer alignment sensing|
    US20070242271A1|2006-04-12|2007-10-18|Moon Euclid E|Infrared interferometric-spatial-phase imaging using backside wafer marks|
    US20130141704A1|2010-08-06|2013-06-06|V Technology Co., Ltd.|Microlens exposure system|WO2020178234A1|2019-03-05|2020-09-10|Fogale Nanotech|Method and device for measuring interfaces of an optical element|JPS6349892B2|1981-06-12|1988-10-06|Hitachi Ltd|
    US4636626A|1983-01-14|1987-01-13|Nippon Kogaku K.K.|Apparatus for aligning mask and wafer used in semiconductor circuit element fabrication|
    EP0411966B1|1989-08-04|1994-11-02|Canon Kabushiki Kaisha|Position detection method and apparatus|
    JP2004165723A|2002-11-08|2004-06-10|Olympus Corp|Electronic imaging apparatus|
    US7535646B2|2006-11-17|2009-05-19|Eastman Kodak Company|Light emitting device with microlens array|
    NL1036683A1|2008-04-14|2009-10-15|Asml Netherlands Bv|Focus sensor, inspection apparatus, lithographic apparatus and control system.|
    JP2011164503A|2010-02-15|2011-08-25|Hitachi Displays Ltd|Display device|
    JP5736672B2|2010-06-03|2015-06-17|株式会社ニコン|Optical parts and spectrophotometer|
    US8419233B2|2011-05-10|2013-04-16|Applied Lighting Company|Lampshade structure for LED lamps|
    US9760020B2|2012-11-21|2017-09-12|Kla-Tencor Corporation|In-situ metrology|WO2016092053A1|2014-12-12|2016-06-16|Werth Messtechnik Gmbh|Method and device for measuring features of workpieces|
    US10473714B2|2017-03-06|2019-11-12|Asm Technology Singapore Pte Ltd|Method and apparatus for aligning electronic components|
    CN108036732B|2017-11-30|2020-05-26|中国科学院光电技术研究所|Gap detection device based on super-resolution lithography|
    US20210340663A1|2018-04-03|2021-11-04|Matthias HEYMANNS|Apparatus for processing a substrate, system for processing a substrate, and methods therefor|
    DE102018114860A1|2018-06-20|2019-12-24|Precitec Optronik Gmbh|Device and method for the optical measurement of a measurement object|
    法律状态:
    2015-12-15| PLFP| Fee payment|Year of fee payment: 3 |
    2016-12-15| PLFP| Fee payment|Year of fee payment: 4 |
    2017-12-21| PLFP| Fee payment|Year of fee payment: 5 |
    2018-04-20| TP| Transmission of property|Owner name: UNITY SEMICONDUCTOR, FR Effective date: 20180316 |
    2019-12-20| PLFP| Fee payment|Year of fee payment: 7 |
    2020-12-23| PLFP| Fee payment|Year of fee payment: 8 |
    2021-12-22| PLFP| Fee payment|Year of fee payment: 9 |
    优先权:
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    FR1362065A|FR3014212B1|2013-12-04|2013-12-04|DEVICE AND METHOD FOR POSITIONING PHOTOLITHOGRAPHY MASK BY OPTICAL NON-CONTACT METHOD|FR1362065A| FR3014212B1|2013-12-04|2013-12-04|DEVICE AND METHOD FOR POSITIONING PHOTOLITHOGRAPHY MASK BY OPTICAL NON-CONTACT METHOD|
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