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    • 专利摘要:
    The present invention is a method for producing a coating film-forming composition for lithography, the method including a step for passing a liquid through a filter cartridge. The filter cartridge is obtained by layering more than one type of filtration base fabrics or winding same around a hollow inner tube, and the filter cartridge is characterized in that: the filtration base fabrics are non-woven fabrics in which metal-adsorbing groups are chemically bonded to polyolefin fibers; the filtration base fabrics contain a nonwoven fabric layer A and a non-woven fabric layer B; the non-woven fabric layer A is configured from polyolefin fibers to which sulfonic acid groups are chemically bonded as metal-adsorbing groups; and the non-woven fabric layer B is configured from polyolefin fibers to which at least one type selected from among amino groups, Nmethyl-D−glucamine groups, iminodiacetic acid groups, iminodiethanol groups, amidoxime groups, phosphoric acid groups, carboxylic acid groups and ethylenediamine triacetic acid groups chemically bonded as metal-adsorbing groups. According to this production method, the amount of metal impurities that are the cause of minute defects on a wafer can be reduced.
    公开号:FI20215644A1
    申请号:FI20215644
    申请日:2019-12-18
    公开日:2021-06-03
    发明作者:Tomoya Ohashi；Toyoshiro YOSHIDA；Suguru Sassa
    申请人:Nissan Chemical Corp；
    IPC主号:
    专利说明:

    [0001] [0001] The present invention relates to a method for producing a coating film-forming composition for lithography having reduced metal impurities that cause a defect in the lithography process in the production of a semiconductor device.
    [0002] [0002] Regarding the lithography process in the production of a semiconductor device, the composition used for forming a coating film for lithography (coating film-forming composition for lithography) in the lithography process is reguired to have reduced — metal impurities that would cause very small defective portions (referred to as called a defect having a size of, for example about 1 to 100 nm) on a wafer. Patent Literature 1 discloses a filter having a high efficiency of adsorption and removal of metals. Citation List — Patent Literature
    [0003] [0003] Patent Literature 1: JP 2018-167223 A Summary of Invention Technical Problem
    [0004] [0004] An object of the present invention is to provide a method for producing a coating film-forming composition for lithography having reduced metal impurities that 5 cause a defect on a wafer in the lithography process in the production of a N semiconductor device, and a method for reducing metals in a precursor of a coating S film-forming composition for lithography. 0 30 r Solution to Problem E [0005] The present invention embraces the followings. 3 [1] O A method for producing a coating film-forming composition for lithography, O 35 comprising the step of passing a liquid through a metal removal filter cartridge, wherein the metal removal filter cartridge is a filter cartridge having more than one type of filtration base fabric stacked on or a filter cartridge having more than one
    [2] [2] The method for producing a coating film-forming composition for lithography according to [1], further comprising the step of passing a liquid through a fine-particle removal filter cartridge.
    [3] [3] The method for producing a coating film-forming composition for lithography according to [2], wherein a material for the fine-particle removal filter is at least one — selected from the group consisting of polyethylene and nylon.
    [4] [4] The method for producing a resist underlayer film-forming composition according to any one of [1] to [3], wherein the coating film-forming composition for lithography is a resist underlayer film-forming composition.
    [8] [8] The method for producing a resist underlayer film-forming composition according to any one of [4] to [7], wherein the resist underlayer film-forming composition further comprises a surfactant.
    [9] [9] A method for reducing metals in a precursor of a coating film-forming composition for lithography, comprising passing a precursor of a coating film-forming composition for lithography through a metal removal cartridge filter to reduce metals in the precursor, wherein the filter cartridge has more than one type of filtration base fabric stacked on or more than one type of filtration base fabric wound round a hollow cylinder, wherein the filtration base fabric is a nonwoven fabric of a polyolefin fiber having a metal-adsorbing group chemically bonded thereto, wherein the filtration base fabric comprises a nonwoven fabric layer A and a nonwoven fabric layer B, wherein the nonwoven fabric layer A comprises a polyolefin fiber having a sulfonic acid group chemically bonded as a metal-adsorbing group, and wherein the nonwoven fabric layer B comprises a polyolefin fiber having at least one member selected from an amino group, an N-methyl-D-glucamine group, an iminodiacetic acid group, an iminodiethanol group, an amidoxime group, a phosphoric acid group, a carboxylic acid group, and an ethylenediaminetriacetic acid group chemically bonded as a metal-adsorbing group.
    [10] [10] A method for producing a substrate having a resist pattern, comprising the steps of: = coating the resist underlayer film-forming composition according to any one of a [4] to [8] onto a semiconductor substrate and baking the applied composition to form a S resist underlayer film; and O 30 coating a resist film on the resist underlayer film, and then exposing and I developing the resultant resist film to form a resist pattern, E wherein the substrate is used in producing a semiconductor.
    [12] [12] A method for producing an organic solvent for a coating film-forming composition for lithography, comprising the step of passing a liquid through a metal removal filter cartridge, wherein the metal removal filter cartridge is a filter cartridge having more than one type of filtration base fabric stacked on or a filter cartridge having more than one type of filtration base fabric wound round a hollow cylinder, wherein the filtration base fabric is a nonwoven fabric having a metal- adsorbing group chemically bonded to a polyolefin fiber, wherein the filtration base fabric comprises a nonwoven fabric layer A and a nonwoven fabric layer B, wherein the nonwoven fabric layer A comprises a polyolefin fiber having a sulfonic acid group chemically bonded as a metal-adsorbing group, and wherein the nonwoven fabric layer B comprises a polyolefin fiber having at — least one selected from the group consisting of an amino group, an N-methyl-D- glucamine group, an iminodiacetic acid group, an iminodiethanol group, an amidoxime group, a phosphoric acid group, a carboxylic acid group, and an ethylenediaminetriacetic acid group chemically bonded as a metal-adsorbing group.
    [13] [13] A method for producing a solvent for a coating film-forming composition for lithography, comprising the step of passing a liquid through a metal removal filter = cartridge, N wherein the metal removal filter cartridge is a filter cartridge having stacked O more than one type of filtration base fabric or a filter cartridge having more than one 2 30 — type of filtration base fabric wound round a hollow cylinder, I wherein the filtration base fabric is a nonwoven fabric having a metal- E adsorbing group chemically bonded to a polyolefin fiber, 3 wherein the filtration base fabric comprises a nonwoven fabric layer A and a O nonwoven fabric layer B, O 35 wherein the nonwoven fabric layer A comprises a polyolefin fiber having a sulfonic acid group chemically bonded as a metal-adsorbing group, and wherein the nonwoven fabric layer B comprises a polyolefin fiber havingat
    [0006] [0006] Production of a coating film-forming composition for lithography using the filter cartridge described in the present invention, can produce a coating film-forming composition for lithography having markedly reduced metal impurities. It is possible — to reduce various defects caused in the lithography process in the semiconductor production process.
    [0007] [0007] <Method for producing a coating film-forming composition for lithography> The method for producing a coating film-forming composition for lithography of the present invention comprises the step of preparing a precursor of a coating film- forming composition for lithography, which is in a solution state at room temperature, and then passing the prepared composition precursor through the metal removal filter cartridge described below in detail.
    [0010] [0010] Regarding the wavelength for exposure in the lithography process, an i-line, a KrF excimer laser, an ArF excimer laser, an EUV (extreme ultraviolet light), or an EB (electron beam) may be used.
    [0011] [0011] Examples of the precursors include a photoresist composition (positive and negative) for a known photoresist film formed through application to a semiconductor wafer preferably by spin coating and the baking step; a resist underlayer film-forming composition (containing an organic compound and/or an inorganic compound) for a known resist underlayer film; a protective film-forming composition for a known semiconductor substrate protective film for use in wet etching a known semiconductor substrate; a resist upper-layer film-forming composition for a known resist upper-layer — film; a underlayer film-forming composition for a known directed self-assembled film; and an upper-layer film-forming composition for a known directed self-assembled film; = however, preferred is a protective film-forming composition or a resist underlayer film- N forming composition. Preferred is a resist underlayer film-forming composition.
    [0013] [0013] The solid content of the coating film-forming composition for lithography and a precursor of a coating film-forming composition for lithography precursor according tothe present invention range usually from 0.1 to 70% by mass, preferably from 0.1 to 60% by mass, preferably from 0.1 to 40% by mass. The solid content refers to a proportion of total components left behind the removal of the solvent from the coating film-forming composition for lithography. The proportion of the polymer in the solid content is, for example, within the range of 1 to 100% by mass, 2 to 100% by mass, 3 to 100% by mass, 4 to 100% by mass, 5 to 100% by mass, 10 to 100% by mass, 30 to 100% by mass, 50 to 100% by mass, 6 to 100% by mass, 1 to 99.9% by mass, 50 to
    [0014] [0014] <Polymer> The coating film-forming composition for lithography used in the present invention preferably comprises an organic solvent and a polymer having a weight average molecular weight of 800 or more. As an example of specific structure of the polymer, the polymer preferably has a unit structure represented by the following formula (1):
    [0015] [0015] [Chemical Formula 1] It A.I IN) N N—C—t—bombgibo LL} (1) AA l, jo ja da Ås je n
    [0016] [0016] wherein X represents a group represented by the following formula (2), (3), or (4): 5 [Chemical Formula 2] & » R! RF R* > | | | dT rT UT z R R* O O s (2) (3) (4) LO 25 — [0017] wherein each of R! to RP independently represents a hydrogen atom, an alkyl O group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, a benzyl group, or a phenyl group, wherein the phenyl group is optionally substituted with at least one group selected from the group consisting of an alkyl group having 1 to 6
    [0018] [0018] Examples of the alkyl groups having 1 to 6 carbon atoms include a methyl group, an ethyl group, a n-propyl group, an i-propyl group, a cyclopropyl group, a n- butyl group, an i-butyl group, a s-butyl group, a t-butyl group, a cyclobutyl group, a 1- 5 methyl-cyclopropyl group, a 2-methyl-cyclopropyl group, a n-pentyl group, a 1-methyl- n-butyl group, a 2-methyl-n-butyl group, a 3-methyl-n-butyl group, a 1,1-dimethyl-n- S 15 — propyl group, a 1,2-dimethyl-n-propyl group, a 2,2-dimethyl-n-propyl group, a 1-ethyl- O n-propyl group, a cyclopentyl group, a 1-methyl-cyclobutyl group, a 2-methyl- I cyclobutyl group, a 3-methyl-cyclobutyl group, a 1,2-dimethyl-cyclopropyl group, a E 2,3-dimethyl-cyclopropyl group, a 1-ethyl-cyclopropyl group, a 2-ethyl-cyclopropyl 3 group, a n-hexyl group, a 1-methyl-n-pentyl group, a 2-methyl-n-pentyl group, a 3- O 20 — methyl-n-pentyl group, a 4-methyl-n-pentyl group, a 1,1-dimethyl-n-butyl group, a 1,2- O dimethyl-n-butyl group, a 1,3-dimethyl-n-butyl group, a 2,2-dimethyl-n-butyl group, a 2,3-dimethyl-n-butyl group, a 3,3-dimethyl-n-butyl group, a 1-ethyl-n-butyl group, a 2- ethyl-n-butyl group, a 1,1,2-trimethyl-n-propyl group, a 1,2,2-trimethyl-n-propyl group,
    [0019] [0019] Examples of the alkenyl groups having 2 to 6 carbon atoms include a vinyl group, an allyl group, a propenyl group, a butenyl group, a hexenyl group, and a cyclohexenyl group.
    [0020] [0020] Examples of alkoxy groups having 1 to 6 carbon atoms include a methoxy group, an ethoxy group, a n-propoxy group, an isopropoxy group, a n-butoxy group, a t- butoxy group, a cyclopentyloxy group, and a cyclohexyloxy group.
    [0021] [0021] Examples of the alkylthio groups having 1 to 10 carbon atoms include an ethylthio group, a butylthio group, a hexylthio group, and an octylthio group.
    [0022] [0022] Examples of the alkylene groups having 1 to 6 carbon atoms include divalent organic groups corresponding to the above-mentioned alkyl groups, such as a methylene group, an ethylene group, a n-propylene group, an isopropylene group, a cyclopropylene group, a n-butylene group, an isobutylene group, a s-butylene group, a t-butylene group, a cyclobutylene group, a 1-methyl-cyclopropylene group, a 2-methyl-cyclopropylene — group, a n-pentylene group, a 1-methyl-n-butylene group, a 2-methyl-n-butylene group, a 3-methyl-n-butylene group, a 1,1-dimethyl-n-propylene group, a 1,2-dimethyl-n- = propylene group, 2,2-dimethyl-n-propylene, a 1-ethyl-n-propylene group, a N cyclopentylene group, a 1-methyl-cyclobutylene group, a 2-methyl-cyclobutylene S group, a 3-methyl-cyclobutylene group, a 1,2-dimethyl-cyclopropylene group, a 2,3- O 30 — dimethyl-cyclopropylene group, a 1-ethyl-cyclopropylene group, a 2-ethyl- I cyclopropylene group, a n-hexylene group, a 1-methyl-n-pentylene group, a 2-methyl-n- E pentylene group, a 3-methyl-n-pentylene group, a 4-methyl-n-pentylene group, a 1,1- 3 dimethyl-n-butylene group, a 1,2-dimethyl-n-butylene group, a 1,3-dimethyl-n-butylene O group, a 2,2-dimethyl-n-butylene group, a 2,3-dimethyl-n-butylene group, a 3,3- O 35 — dimethyl-n-butylene group, a 1-ethyl-n-butylene group, a 2-ethyl-n-butylene group, a 1,1,2-trimethyl-n-propylene group, a 1,2,2-trimethyl-n-propylene group, a 1-ethyl-1- methyl-n-propylene group, a 1-ethyl-2-methyl-n-propylene group, a cyclohexylene
    [0023] [0023] The polymer having a weight average molecular weight of 800 or more, for example, 800 to 100,000, 1,500 to 50,000, 2,000 to 30,000, or 3,000 to 20,000 may be used. The weight average molecular weight can be determined under, for example, the following conditions. Apparatus: HLC-8320GPC, manufactured by Tosoh Corp. GPC Column: Shodex [registered trademark ]-Asahipak [registered trademark] (Showa DenkoK K) Column temperature: 40°C Flow rate: 0.35 mL/minute Eluent: Tetrahydrofuran (THF) Standard sample: Polystyrene (Tosoh Corp.)
    [0024] [0024] <Organic solvent> The coating film-forming composition for lithography in the present invention may be produced by dissolving the above-mentioned components in an organic solvent, 5 and may be used in a uniform solution state.
    [0025] [0025] With respect to the organic solvent for the coating film-forming composition S for lithography in the present invention, there is no particular limitation as long asitisa O 30 solvent that can dissolve therein the above-mentioned components, and any of such x solvents may be used. Particularly, the coating film-forming composition for a lithography and the precursor of the coating film-forming composition for lithography 3 in the present invention are used in a uniform solution state, and, taking the coating O properties of the composition into consideration, it is recommended that an organic O 35 solvent usually used in the lithography process is used.
    [0026] [0026] Examples of the organic solvents include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate,
    [0027] [0027] Of these solvents, preferred are propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, butyl lactate, and cyclohexanone. Especially preferred are propylene glycol monomethyl ether and propylene glycol —monomethyl ether acetate.
    [0028] [0028] <Crosslinkable compound> The coating film-forming composition for lithography used in the present invention preferably contains a crosslinkable compound. Examples of crosslinkable compounds include melamine compounds, substituted urea compounds, or the polymers — thereof; epoxy compounds or the polymers thereof; and blocked isocyanate compounds or the polymers thereof. Preferred is a crosslinkable compound having at least two crosslinking forming substituents, and such a compound includes methoxymethylated glycoluril, butoxymethylated glycoluril, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanamine, butoxymethylated benzoguanamine, methoxymethylated urea, butoxymethylated urea, methoxymethylated thiourea, and methoxymethylated thiourea. A specific example is = tetramethoxymethylglycoluril. Further, a condensation product of the above N compounds may be used. S [0029] As the crosslinkable compound, a crosslinking agent having a high heat O 30 resistance may be used. As the crosslinking agent having a high heat resistance, a I compound containing in the molecule thereof a crosslinking forming substituent having E an aromatic ring (for example, a benzene ring or a naphthalene ring) may be used. 3 Examples of the crosslinkable compounds include compounds having a partial O structure of formula (5-1) below, and polymers or oligomers having repeating units of O 35 formula (5-2) below.
    [0030] [0030] [Chemical Formula 10]
    [0031] [0031] The above-mentioned RM, R' , RY, and R'* are a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, and, as the alkyl group, those mentioned above as examples may be used.
    [0032] [0032] ml satisfies the relationship: 1 <ml <6 - m2, m2 satisfies the relationship: 1 < m2 < 5, m3 satisfies the relationship: 1 < m3 <4 - m2, and m4 satisfies the relationship: 1 <m4 <3.
    [0033] [0033] Examples of the compounds, polymers, and oligomers of formulae (5-1) and (5-2) are shown below.
    [0034] [0034] [Chemical Formula 11]
    [0035] [0035] [Chemical Formula 12]
    [0036] [0036] The above-mentioned compounds are available as products of Asahi Yukizai Corporation and Honshu Chemical Industry Co., Ltd. For example, among the above- mentioned crosslinking agents, the compound of formula (6-22) is available as trade name: TMOM-BP, manufactured by Asahi Yukizai Corporation.
    [0037] [0037] Asthe compound having at least two epoxy groups, a polymer having an epoxy group may be used. With respect to the above-mentioned polymer, there is no particular limitation as long as it is a polymer having an epoxy group, and any of such polymers may be used. Such a polymer may be produced by addition polymerization using an addition-polymerizable monomer having an epoxy group, or may be produced by a reaction of a polymer compound having a hydroxyl group and a compound having an epoxy group, such as epichlorohydrin or glycidyl tosylate. Examples of the polymers include addition polymerization polymers, such as polyglycidyl acrylate, a copolymer of glycidyl methacrylate and ethyl methacrylate, and a copolymer of glycidyl methacrylate, styrene, and 2-hydroxyethyl methacrylate, and polycondensation polymers, such as epoxy novolak. The polymer has a weight average molecular — weight of, for example, 300 to 200,000. The weight average molecular weight is a value obtained by gel permeation chromatography (GPC) using polystyrene as a standard sample.
    [0038] [0038] Asthe compound having at least two epoxy groups, an epoxy resin having an amino group may be used. Examples of such epoxy resins include YH-434, YH-434L (manufactured by NSCC Epoxy Manufacturing Co., Ltd.) (former Tohto Kasei Co., Ltd).
    [0039] [0039] As the crosslinking agent, a compound having at least two blocked isocyanate groups may be used. Examples of such compounds include TAKENATE (registered trademark) B-830, TAKENATE B-870N, manufactured by Mitsui Chemicals, Inc., and VESTANAT (registered trademark)-B1358/100, manufactured by Evonik Degussa. The crosslinking agent may be used alone or in combination of two or more. 5 [0040] The amount of the crosslinkable compound added varies depending on, for example, the application solvent used, the substrate used, the required solution O viscosity, or the reguired film form; however, it is within the range of usually 0.001 to 2 30 80% by weight, preferably 0.01 to 50% by weight, further preferably 0.1 to 40% by x weight, based on the weight of the total solid content of the coating film-forming E composition for lithography or the precursor of the coating film-forming composition 3 for lithography. The crosslinkable compound possibly causes a crosslinking reaction O due to self-condensation; however, when a crosslinkable substituent is present in the O 35 above-mentioned polymer in the present invention, the crosslinkable compound and the crosslinkable substituent can together cause a crosslinking reaction.
    [0041] [0041] <Crosslinking catalyst>
    [0042] [0042] Examples of sulfonic acid compounds or carboxylic acid compounds include ammonium trifluoroacetate, p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium trifluoromethanesulfonate, pyridinium p-toluenesulfonate, pyridinium 4- hydroxybenzenesulfonate, salicylic acid, camphorsulfonic acid, 5-sulfosalicylic acid, 4- chlorobenzenesulfonic acid, 4-hydroxybenzenesulfonic acid, pyridinium 4- hydroxybenzenesulfonate, benzenedisulfonic acid, 1-naphthalenesulfonic acid, 4- nitrobenzenesulfonic acid, citric acid, benzoic acid, and hydroxybenzoic acid.
    [0043] [0043] Examples of thermal acid generators include K-PURE [registered trademark] CXC-1612, K-PURE CXC-1614, K-PURE TAG-2172, K-PURE TAG-2179, K-PURE TAG-2678, K-PURE TAG2689 (each of which is manufactured by King Industries, — Inc.) and SI-45, SI-60, SI-80, SI-100, SI-110, SI-150 (each of which is manufactured by Sanshin Chemical Industry Co., Ltd.).
    [0044] [0044] The crosslinking catalyst may be used alone or in combination of two or more.
    [0046] [0046] <Other components> In the coating film-forming composition for lithography in the present invention, for example, a light absorber, a rheology modifier, or a bonding auxiliary may be added. The rheology modifier is effective in improving the fluidity of the coating film-forming composition for lithography. The bonding auxiliary is effective in improving the adhesion between the resist underlayer film and a semiconductor substrate or resist.
    [0047] [0047] <Filter cartridge> The filter cartridge used in the present invention is preferably one which is = described in JP 2018-167223 A. N [0048] Thefilter cartridge used in the present invention is a filter cartridge having O more than one type of filtration base fabric stacked on or a filter cartridge having more 2 30 — than one type of filtration base fabric wound round a hollow cylinder, wherein the I filtration base fabric is a nonwoven fabric having a metal-adsorbing group chemically E bonded to a polyolefin fiber, wherein the filtration base fabric comprises a nonwoven 3 fabric layer A and a nonwoven fabric layer B, wherein the nonwoven fabric layer A O comprises a polyolefin fiber having a sulfonic acid group chemically bonded as a metal- O 35 adsorbing group, and wherein the nonwoven fabric layer B comprises a polyolefin fiber having at least one selected from the group consisting of an amino group, an N-methyl- D-glucamine group, an iminodiacetic acid group, an iminodiethanol group, an
    [0049] [0049] The filter cartridge used in the present invention is a filter cartridge having more than one type of filtration base fabric stacked on or a filter cartridge having more than one type of filtration base fabric wound round a hollow cylinder, wherein the filtration base fabric is a nonwoven fabric having a metal-adsorbing group chemically bonded to a polyolefin fiber, and wherein the filtration base fabric comprises nonwoven fabric layer A and nonwoven fabric layer B. Nonwoven fabric layer A comprises a polyolefin fiber having a sulfonic group chemically bonded as a metal-adsorbing group, and nonwoven fabric layer B comprises a polyolefin fiber having at least one selected from the group consisting of an amino group, an N-methyl-D-glucamine group, an iminodiacetic acid group, an iminodiethanol group, an amidoxime group, a phosphoric acid group, a carboxylic acid group, and an ethylenediaminetriacetic acid group chemically bonded as a metal-adsorbing group. Attributable to these features, metals — can be efficiently removed. More than one type of filtration base fabric includes a single piece of filtration base fabric integrated by binding together different types of filtration base fabric.
    [0050] [0050] In the present invention, nonwoven fabric layer B especially preferably comprises a polyolefin fiber having an iminodiethanol group chemically bonded thereto. This is because such a polyolefin fiber has a high efficiency of removal of metals. With respect to the metals that can be adsorbed, the sulfonic acid group adsorbs mainly Na, Cu, and K, and the iminodiethanol group adsorbs mainly Cr, Al, and Fe.
    [0051] [0051] The polyolefin fiber constituting nonwoven fabric layers A and B is preferably a continuous fiber. This is because continuous fiber nonwoven fabric is unlikely to — cause fabric tailings and has a high filter performance. Especially, preferred is melt- blown continuous fiber nonwoven fabric having a high weight per unit area (metsuke) = of 10 to 100 g/m”. N [0052] The polyolefin fiber constituting nonwoven fabric layers A and B preferably O has a single fiber average diameter of 0.2 to 10 um. When the single fiber average 2 30 diameter of the polyolefin fiber is within the above range, a high filter performance can I be achieved. In addition, the surface area (specific surface area) of the fiber may be E increased, so that the surface of the base material for a graft polymerization reaction is 3 increased, making it possible to increase the graft ratio. O [0053] With respect to the polyolefin fiber, preferred is one selected from O 35 polypropylene, a copolymer of propylene and ethylene, polyethylene, and a copolymer of ethylene and another a-olefin having 4 or more carbon atoms; and especially preferred is high density polyethylene. These polymers are inert and stable against a
    [0054] [0054] Tt is preferred that the filter cartridge is a filter cartridge comprising a hollow cylinder and filtration base fabric, wherein the filtration base fabric is a nonwoven fabric having a metal-adsorbing group chemically bonded to a polyolefin fiber, and wherein the filtration base fabric is wound round the hollow cylinder to form a stacked structure.
    [0055] [0055] The filter in the present invention is a filter having the above-mentioned filter cartridge incorporated. The filter cartridge has filtration base fabric wound round a cylinder and is contained in a container. When incorporating the filter cartridge into a — container for filter, the filter cartridge in the state of being contained in the container is incorporated into the filter. In the case of a cartridge type filter, the filter function can be regenerated by replacing only the filter cartridge, but the present invention includes, for example, a capsule type filter such that the container for filter including the contents is replaced. In the case of a capsule type filter, a filtration portion corresponds to the — filter cartridge.
    [0056] [0056] The method for causing a functional group to be chemically bonded to a polyolefin fiber is described below. A polyolefin fiber is irradiated with an electron beam or radiation, such as a y-ray, and then contacted with an emulsion containing a reactive monomer, such as GMA, or alternatively, a polyolefin fiber is contacted with — an emulsion containing a reactive monomer and then irradiated with an electron beam or radiation, such as a y-ray, thereby causing graft polymerization of the reactive monomer on the polyolefin fiber. When the polyolefin fiber is irradiated with an electron beam, the irradition may be carried out so as to achieve an irradiation dose of usually 1 to 200 kGy, preferably 5 to 100 kGy, more preferably 10 to 50 kGy . With — respect to the atmosphere conditions, the irradiation is preferably conducted in a nitrogen gas atmosphere. Asan electron beam irradiation apparatus, one which is = commercially available may be used, and, for example, as an area beam-type electron N beam irradiation apparatus, EC250/15/180L (manufactured by Iwasaki Electric Co., O Ltd.), EC300/165/800 (manufactured by Iwasaki Electric Co., Ltd.), or EPS300 2 30 (manufactured by NHV Corporation) may be used. I [0057] A specific example of graft polymerization method includes a liquid-phase a graft polymerization method, in which a nonwoven fabric is activated by irradiation 3 with radiation, such as a y-ray, or an electron beam; then the irradiated fabric is O immersed in an emulsion containing water, a surfactant, and a reactive monomer, to O 35 complete the graft polymerization on the nonwoven fabric base material; and subsequently, a functional group, such as a sulfonic acid group, an amino group, an N- methyl-D-glucamine group, an iminodiacetic acid group, an iminodiethanol group, an
    [0058] [0058] [Chemical Formula 13] O N f
    [0059] [0059] [Chemical Formula 14]HO OHNNR
    [0060] [0060] [Chemical Formula 15]O O
    [0063] [0063] [Chemical Formula 17]
    [0064] [0064] [Chemical Formula 18] R= n m | YVYYVO OOH
    [0065] [0065] In the (Chemical Formula 9) and (Chemical Formula 10) above, n and m are an integer of 1 or more.
    [0066] [0066] <Fine-particle removal filter> In the method for producing a coating film-forming composition for lithography of the present invention, it is preferred to pass the precursor of the coating film-forming composition for lithography through the filter cartridge, and then further — passit through a fine-particle removal filter. Any fine-particle removal filter known per se may be used. Preferably, the material for the fine-particle removal filter is at least one member selected from the group consisting of polyethylene and nylon.
    [0067] [0067] The fine-particle removal filter usually has a pore diameter of 30 nm or less, preferably, 1 to 30 nm, 1 to 20 nm, or 1 to 10 nm, for example. = 15 [0068] <Method for reducing metals> N The method of the present invention for reducing metals in a precursor of a S coating film-forming composition for lithography is a method comprising filtering the O precursor of the coating film-forming composition for lithography described above with I a filter cartridge to reduce metals in the precursor, Ao - 20 wherein the cartridge filter has more than one type of filtration base fabric 3 stacked on or more than one type of filtration base fabric wound round a hollow O cylinder, O wherein the filtration base fabric is a nonwoven fabric having a metal- adsorbing group chemically bonded to a polyolefin fiber, wherein the filtration base fabric comprises a nonwoven fabric layer A and a
    [0069] [0069] Attributable to the step, the precursor of the coating film-forming composition — for lithography can be reduced in metal impurities contained therein, which are derived from the raw materials or solvents, making it possible to reduce defects in the lithography process.
    [0070] [0070] By the above-mentioned method for reducing metals, various metal impurities (for example, Na, Cu, Cr, Al, and Fe) can be reduced to 0.5 ppb or less, 0.4 ppb or less, 03 ppb orless, 0.2 ppb or less, 0.1 ppb or less, for example. The metal impurities can be guantitatively determined by, for example, the method described in the Examples.
    [0071] [0071] <Method for producing a substrate having a resist pattern, and method for producing a semiconductor device> The method for producing a substrate having a resist pattern in the present invention and the method for producing a semiconductor device are described below.
    [0072] [0072] The substrate having a resist pattern in the present invention may be produced by coating the above-described film-forming composition for lithography onto a semiconductor substrate and baking the coating film.
    [0073] [0073] Examples of semiconductor substrates to which the coating film-forming composition for lithography in the present invention is applied include a silicon wafer, a 5 germanium wafer, and compound semiconductor wafers, such as gallium arsenide, N indium phosphide, gallium nitride, indium nitride, and aluminum nitride. O [0074] When a semiconductor substrate having an inorganic film formed on the 2 30 surface thereof is used, the inorganic film is formed by, for example, an ALD (atomic I layer deposition) method, a CVD (chemical vapor deposition) method, a reactive E sputtering method, an ion plating method, a vacuum deposition method, or a spin 3 coating method (spin on glass: SOG). Examples of the inorganic films include a O polysilicon film, a silicon oxide film, a silicon nitride film, a BPSG (Boro-Phospho O 35 Silicate Glass) film, a titanium nitride film, a titanium nitride oxide film, a tungsten nitride film, a gallium nitride film, and a gallium arsenide film.
    [0075] [0075] The resist underlayer film-forming composition in the present invention is
    [0076] [0076] Exposure is carried out through a mask (reticle) for forming a predetermined pattern, using, for example, an i-line, a KrF excimer laser, an ArF excimer laser, an EUV (extreme ultraviolet light) or an EB (electron beam). In development, an alkaline developer is used, and the conditions of development are appropriately selected from those at a development temperature of 5 to 50°C for a development time of 10 to 300 — seconds. As an alkaline developer, an aqueous solution of an alkali, e.g., an inorganic alkali, such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, or aqueous ammonia; a primary amine, such as ethylamine or n-propylamine; a secondary amine, such as diethylamine or di-n-butylamine; a tertiary amine, such as triethylamine or methyldiethylamine; an alcohol amine, such as — dimethylethanolamine or triethanolamine; a quaternary ammonium salt, such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, or choline; or a = cyclic amine, such as pyrrole or piperidine may be used, for example. Further, an N appropriate amount of an alcohol, such as isopropyl alcohol, or a surfactant, such as a O nonionic surfactant may be added to the above-mentioned agueous alkali solution 2 30 — before use. Ofthese, a preferred developer is a quaternary ammonium salt, and I tetramethylammonium hydroxide and choline are more preferred. Further, a surfactant a or the like may be added to the above developer. A method comprising developing a 3 portion of the photoresist, in which the alkali dissolution rate is not improved, using an O organic solvent, such as butyl acetate, in place of an alkaline developer may also be O 35 — used.
    [0077] [0077] Then, using the formed resist pattern as a mask, the lithography coating film is subjected to dry etching. The dry etching is carried out so as to expose the surface of
    [0078] [0078] Hereinbelow, the present invention is described in more detail with reference to the following Examples and others, which should not be construed as limiting the scope of the present invention. <Synthesis Example 1> 800 g of monoallyldiglycidylisocyanuric acid (manufactured by Shikoku Chemicals Corporation), 608 g of 3,3 -dithiodipropionic acid (manufactured by Sakai Chemical Industry Co., Ltd.; trade name: DTDPA), and 53 g of — triphenylmonoethylphosphonium bromide, a guaternary phosphonium salt, as a catalyst, were dissolved in 2,191 g of propylene glycol monomethy! ether. The resultant solution was heated and then stirred in a nitrogen gas atmosphere for 4 hours under controlling the temperature at 120°C. The obtained reaction product was diluted with 3,652 g of propylene glycol monomethyl ether, and the resultant solution was subjected — to GPC analysis. As a result, a weight average molecular weight of the reaction product was about 7,800, by GPC using a conversion calibration curve obtained from the standard polystyrene. The reaction product contains a polymer compound having a structural unit represented by the following formula (A-1).
    [0079] [0079] [Chemical Formula 19]
    [0081] [0081] <Example 1> 90 kg of the resist underlayer film-forming composition obtained in Preparation Example 1 above was filtered through one cartridge filter (10 inches) (manufactured by Kurashiki Textile Manufacturing Co., Ltd.) described in JP 2018- 167223 A, one polyethylene filter Microgard™ UC Filter (model number: CWCF01MSTUC: manufactured by Nihon Entegris G K.), and one nylon filter Ultipleat P-Nylon (model number: ABDIANM3EH]1; manufactured by Nihon Pall Ltd.) ata filtration rate of 50 L/hour for 24 hours. A metal content of the solution obtained after the filtration was measured by means of an ICP-MS (Agilent 8800, manufactured by Agilent Technologies, Inc.).
    [0082] [0082] <Comparative Example 1> 90 kg of the resist underlayer film-forming composition obtained in Preparation Example 1 above was filtered through one polyethylene filter Microgard'M UC Filter (model number: CWCF01MSTUC: manufactured by Nihon Entegris G K.) and one nylon filter Ultipleat P-Nylon (model number: ABDIANM3EHI; manufactured by Nihon Pall Ltd.) at a filtration rate of 50 L/hour for 24 hours. A metal content of the solution obtained after the filtration was measured by means of an ICP-MS (Agilent 8800, manufactured by Agilent Technologies, Inc.).
    [0083] [0083] <Comparative Example 2> To 90 kg of the resist underlayer film-forming composition obtained in Preparation Example 1 above was added 1.8 kg of a strongly acidic ion-exchange resin (XSC-1115-H, manufactured by Muromachi Chemicals Inc.). The resultant mixture was subjected to ion exchange in a batch for 4 hours. Thereafter, the ion-exchange resin was eliminated by filtration. The thus ion-exchanged, resist underlayer film-forming 5 composition was filtered through one polyethylene filter Microgard™ UC Filter (model number: CWCFOIMSTUC, manufactured by Nihon Entegris G.K.) and one nylon filter O Ultipleat P-Nylon (model number: ABDIANM3EH]1; manufactured by Nihon Pall Ltd.) 2 30 ata filtration rate of 50 L/hour for 24 hours. A metal content of the solution obtained I after the filtration was measured by means of an ICP-MS (Agilent 8800, manufactured E by Agilent Technologies, Inc.). 3 [0084] <Metal concentration in organic solvent> O Table 1 shows the results of metal concentration after conducting the treatment O 35 methods in Example 1 and Comparative Examples 1 and 2.
    [0085] [0085] [Table 1]
    [0086] [0086] Table 1 shows that Example 1 can effectively reduce metals, as compared to the reduction of metals by nylon filter filtration and the reduction of metals by ion exchange.
    [0087] [0087] According to the present invention, there is provided a coating film-forming composition for lithography reduced metal impurities remarkably.NO
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    I ©LONON
    权利要求:
    Claims (9)
    [1] - 28 -
    CLAIMS [Claim 1] A method for producing a coating film-forming composition for lithography, comprising the step of passing a liquid through a metal removal filter cartridge, wherein the metal removal filter cartridge is a filter cartridge having stacked more than one type of filtration base fabric or a filter cartridge having more than one type of filtration base fabric wound round a hollow cylinder, wherein the filtration base fabric is a nonwoven fabric of a polyolefin fiber — having a metal-adsorbing group chemically bonded thereto, wherein the filtration base fabric comprises a nonwoven fabric layer A and a nonwoven fabric layer B, wherein the nonwoven fabric layer A comprises a polyolefin fiber having a sulfonic acid group chemically bonded as a metal-adsorbing group, and wherein the nonwoven fabric layer B comprises a polyolefin fiber having at least one selected from the group consisting of an amino group, an N-methyl-D- glucamine group, an iminodiacetic acid group, an iminodiethanol group, an amidoxime group, a phosphoric acid group, a carboxylic acid group, and an ethylenediaminetriacetic acid group chemically bonded as a metal-adsorbing group. [Claim 2] The method for producing a coating film-forming composition for lithography according to claim 1, further comprising the step of passing a liquid through a fine-particle removal filter cartridge. [Claim 3] The method for producing a coating film-forming composition for lithography according to claim 2, wherein a material for the fine-particle removal filter 1s atleast one selected from the group consisting of polyethylene and nylon. [Claim 4] The method for producing a resist underlayer film-forming = composition according to any one of claims 1 to 3, wherein the coating film-forming N composition for lithography is a resist underlayer film-forming composition. O [Claim 5] The method for producing a resist underlayer film-forming 2 30 composition according to claim 4, wherein the coating film-forming composition for I lithography comprises an organic solvent and a polymer having a weight average a molecular weight of 800 or more. 3 [Claim 6] The method for producing a resist underlayer film-forming O composition according to claim 4 or 5, wherein the resist underlayer film-forming O 35 composition further comprises a crosslinkable compound. [Claim 7] The method for producing a resist underlayer film-forming composition according to any one of claims 4 to 6, wherein the resist underlayer film-
    - 29 - forming composition further comprises a crosslinking catalyst. [Claim 8] The method for producing a resist underlayer film-forming composition according to any one of claims 4 to 7, wherein the resist underlayer film- forming composition further comprises a surfactant.
    [Claim 9] A method for reducing metals in a precursor of a coating film-forming composition for lithography, comprising passing a precursor of a coating film-forming composition for lithography through a metal removal cartridge filter to reduce metals in the precursor, wherein the filter cartridge has more than one type of filtration base fabric — stacked on or more than one type of filtration base fabric wound round a hollow cylinder, wherein the filtration base fabric is a nonwoven fabric of a polyolefin fiber having a metal-adsorbing group chemically bonded thereto, wherein the filtration base fabric comprises a nonwoven fabric layer A and a nonwoven fabric layer B, wherein the nonwoven fabric layer A comprises a polyolefin fiber having a sulfonic acid group chemically bonded as a metal-adsorbing group, and wherein the nonwoven fabric layer B comprises a polyolefin fiber having at least one selected from an amino group, an N-methyl-D-glucamine group, an iminodiacetic acid group, an iminodiethanol group, an amidoxime group, a phosphoric acid group, a carboxylic acid group, and an ethylenediaminetriacetic acid group chemically bonded as a metal-adsorbing group.
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    JP2013061426A|2011-09-12|2013-04-04|Nomura Micro Sci Co Ltd|Impurity removal method, impurity removal filtration member and impurity removal filtration device, for resin solution for forming photoresist film|
    JP5727350B2|2011-10-26|2015-06-03|信越化学工業株式会社|Method for producing resist composition for lithography, method for producing resist protective film forming composition, method for producing silicon-containing resist underlayer film forming method, and method for producing organic resist underlayer film forming composition|
    KR102232969B1|2015-04-01|2021-03-29|도레이 카부시키가이샤|Photosensitive colored resin composition|
    US11003078B2|2016-05-02|2021-05-11|Nissan Chemical Corporation|Compositions for forming a protective film against basic aqueous hydrogen peroxide solution, and pattern formation method|
    JP6912244B2|2017-03-30|2021-08-04|倉敷繊維加工株式会社|Filter cartridge and filter|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    JP2018238751|2018-12-20|
    PCT/JP2019/049504|WO2020130005A1|2018-12-20|2019-12-18|Method for producing coating film-forming composition for lithography|
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