• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    An atomic layer deposition chamber (1) comprises a chamber body (2) and a chamber lid (3), and additionally comprises at least one separation plate (4) delimiting different interior volumes (5) in the body (2) of the chamber (1), each one of these interior volumes (5) having an inlet (6) and an outlet (7). The invention also relates to an atomic layer deposition equipment comprising said atomic layer deposition chamber (1).
    公开号:ES2712868A2
    申请号:ES201990026
    申请日:2016-09-22
    公开日:2019-05-16
    发明作者:Mato Knez；Mikel Beltrán；Eguizábal David Talavera；Juárez Mercedes Vila
    申请人:Cic Nanogune；Coating Tech S L；
    IPC主号:
    专利说明:

    [0001]
    [0002] Chamber for deposition of atomic layers
    [0003]
    [0004] Field of the invention
    [0005]
    [0006] The present invention relates to a chamber for deposition of atomic layers ("Atomic Layer Deposition" - ALD, in English), of special application in nanotechnology. It also refers to a device for depositing atomic layers, comprising a chamber for depositing atomic layers of the invention.
    [0007]
    [0008] Background of the invention
    [0009]
    [0010] The deposition of atomic layers (ALD) is a technique used to deposit layers of material in coatings in which appearance is an important feature. An example of an ALD process includes the sequential introduction of gas pulses. For example, a cycle for the sequential introduction of gas pulses may contain a pulse of a first reactive gas, followed by a pulse of a purge gas and / or a pump evacuation, followed by a pulse of a second reactive gas. , and followed by an impulse of a purge gas and / or an evacuation of the pump. The sequential introduction of the individual pulses of the first reagent and the second reagent can result in self-limiting alternating absorption of monolayers of the reactants on the surface of the substrate and, therefore, form a monolayer of material for each cycle. The cycle can be repeated to a desired thickness of the deposited material. A pulse of a purge gas and / or an evacuation of the pump between the pulses of the first reactive gas and the pulses of the second reactant gas serves to reduce the likelihood of gas phase reactions of the reagents due to the excess amounts of the reactants. reagents that remain in the camera.
    [0011]
    [0012] However, it has been observed that the design of cameras for ALD processes, generally oriented to 2D substrates, for example, silicon wafers of those used in microelectronics, does not allow the deposit on substrates of complex shapes that may have large sizes or shapes non-geometrical (for example, implants, fibers and metallurgical parts). The existing machines in the market use interchangeable cameras of different volumes, so its use is annoying and it is necessary to perform numerous processes of connection and disconnection of components.
    [0013]
    [0014] Summary of the invention
    [0015]
    [0016] The object of the present invention is, therefore, to provide a chamber for deposition of atomic layers that solves the drawbacks mentioned in the cameras of the prior art.
    [0017]
    [0018] The invention provides a chamber for deposition of atomic layers comprising a body of the camera and a lid of the chamber, and, additionally, at least one separation plate that delimits different interior volumes in the body of the chamber, each presenting these inner volumes an entrance and an exit.
    [0019]
    [0020] The configuration of the chamber for depositing atomic layers of the invention allows the user to easily change the volume of the chamber depending on the shape or size of the substrates that must be coated. Therefore, it allows the same user to perform the ALD process for a wide range of substrate materials without being limited to substrates of a certain size.
    [0021]
    [0022] The camera, therefore, has a fixed main volume, which can be reduced to convenience with the separation plates, and the appropriate inputs and outputs can be used according to the volumes used.
    [0023]
    [0024] Other advantageous embodiments of the invention are set forth in the dependent claims.
    [0025]
    [0026] Brief description of the figures
    [0027]
    [0028] An illustrative embodiment will now be described, and in no limiting sense, of the object of the present invention, with reference to the accompanying drawings, in which:
    [0029] Figure 1 shows a cross-sectional view of the chamber for deposition of atomic layers of the invention.
    [0030]
    [0031] Figure 2 shows a front view of the chamber for depositing atomic layers of the invention.
    [0032]
    [0033] Figure 3 shows another cross-sectional view of the chamber for depositing atomic layers of the invention.
    [0034]
    [0035] Figure 4 shows a side view of the chamber for depositing atomic layers of the invention.
    [0036]
    [0037] Figure 5 shows a perspective view of the body of the chamber for depositing atomic layers of the invention.
    [0038]
    [0039] Detailed description of the invention
    [0040]
    [0041] Figures 1 to 4 represent several views of the chamber 1 for depositing atomic layers of the invention.
    [0042]
    [0043] In the embodiment shown in said figures there is shown a chamber 1 for depositing atomic layers with a body 2 of the chamber, a cover 3 of the chamber and three interior volumes 5, these interior volumes 5 being separated by two intermediate separation plates 4 . Each of the volumes 5 has an inlet 6 and an outlet 7 (located laterally in Figures 2 and 3), where the corresponding tubes are connected.
    [0044]
    [0045] The embodiment of said figures presents internal volumes 5 of cylindrical shape and staggered, of decreasing diameter downwards. The body 2 of the camera (also shown in Figure 5) has two steps 8, each of these steps 8 being located in the separation between two consecutive inner volumes 5.
    [0046]
    [0047] Figure 4 shows that in the upper part of the camera 1 there is a support 9 to which the cover 3 of the camera can be detachably attached.
    [0048] The support 9 of the lid 3 allows the modular and simple interchangeability of the different lids 3 that can be attached to the chamber 1: conventional lid for thermal deposition processes of atomic layers; plasma reactor lid, for PEALD ("Plasma Enhanced ALD"); lid with electric and mechanical feeders, to allow several external instruments to be placed on the lid 3 to help deposit the film.
    [0049]
    [0050] The covers 3 of the camera can be changed depending on the materials that need to be deposited during the process. For example, a conventional flat lid for the deposition of oxides, a lid PEALD ("Plasma Enhanced ALD") for the deposit of nitrides or an electrical and mechanical feeder cover for assistance in nanostructured processes.
    [0051]
    [0052] The volume of the camera 1 can therefore be modified according to the size of the sample and the shape requirements, thus changing the capacity of the camera 1. On each step 8 a separation plate 4 with a toric seal can be placed and screws, to reduce said capacity at convenience.
    [0053]
    [0054] The chamber 1 can be heated from above, from below and laterally, and the maximum heating temperature can be 300 ° C.
    [0055]
    [0056] Although some embodiments of the invention have been described and illustrated, it is evident that modifications may be introduced within the scope thereof, and should not be considered limited to said embodiments, but only to the content of the following claims.
    权利要求:
    Claims (6)
    [1]
    1 Chamber (1) for deposition of atomic layers, comprising a body (2) of the camera, a cover (3) of the camera and at least one separation plate (4) delimiting different internal volumes (5) in the body (2) of the chamber, each of these inner volumes (5) presenting an entrance (6) and an exit (7), characterized in that the body (2) of the chamber comprises at least one step (8), each of these steps (8) being located in the separation between two consecutive inner volumes (5).
    [2]
    2. Chamber (1) for deposition of atomic layers according to claim 1, wherein the inner volumes (5) are cylindrical and decreasing in diameter downwards.
    [3]
    3. Chamber (1) for deposition of atomic layers according to any of the preceding claims, further comprising a support (9) to which the lid (3) of the camera can be detachably coupled.
    [4]
    4. Chamber (1) for deposition of atomic layers according to claim 3, wherein the lid (3) of the chamber is a lid for thermal processes depositing atomic layers.
    [5]
    5. Chamber (1) for deposition of atomic layers according to claim 3, wherein the lid (3) of the chamber is a plasma reactor lid.
    [6]
    6. - Chamber (1) for deposition of atomic layers according to claim 3, wherein the cover (3) of the camera is a cover with electrical and mechanical feeders.
    Equipment for deposition of atomic layers, comprising a chamber (1) for deposition of atomic layers of one of claims 1 to 6.
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    同族专利:
    公开号 | 公开日
    ES2712868R1|2019-05-29|
    ES2712868B1|2020-03-10|
    WO2018055215A1|2018-03-29|
    CN109790619A|2019-05-21|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    WO2003008663A1|2001-07-16|2003-01-30|Applied Materials, Inc.|Formation of titanium nitride films using a cyclical deposition process|
    JP4879509B2|2004-05-21|2012-02-22|株式会社アルバック|Vacuum deposition system|
    JP5878813B2|2011-06-21|2016-03-08|東京エレクトロン株式会社|Batch processing equipment|
    DE102012010537A1|2012-05-29|2013-12-05|Robert Bosch Gmbh|Programming template for distributed application programs|
    US8822313B2|2012-12-20|2014-09-02|Intermolecular, Inc.|Surface treatment methods and systems for substrate processing|
    KR101579527B1|2013-09-16|2015-12-22|코닉이앤씨 주식회사|Atomic layer deposition apparatus with scan-type reactor and method thereof|
    法律状态:
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    优先权:
    申请号 | 申请日 | 专利标题
    PCT/ES2016/070663|WO2018055215A1|2016-09-22|2016-09-22|Atomic layer deposition chamber|
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