• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Piezoelectric energy collection system and device. The device and system is activated by mechanical energy available in the environment. It is formed by a cantilevered beam, based on zno nanostructures and integrated monolithically with schottky diodes and a capacitor that covers the entire chip. Zno will be used in two different ways: nanowires (nw) and nanosheets (ns). These nanostructures will be grown by a silicon-compatible hydrothermal process and using part of the upper condenser electrode as the seed layer. A process flow is proposed step by step for the monolithic integration in the same device. This integration will allow a reduction of power losses and will facilitate the combination of several generators without worrying about the polarity of mechanical stress or electrical load. (Machine-translation by Google Translate, not legally binding)
    公开号:ES2597983A2
    申请号:ES201530896
    申请日:2015-06-24
    公开日:2017-01-24
    发明作者:Gonzalo MURILLO RODRIGUEZ；Jaume Esteve Tinto；Jorge SACRISTAN RIQUELME
    申请人:Consejo Superior de Investigaciones Cientificas CSIC；
    IPC主号:
    专利说明:

    5
    10
    fifteen
    twenty
    25
    30
    35
    PIEZOELECTRIC ENERGY COLLECTION SYSTEM AND DEVICE
    DESCRIPTION
    Field of Invention
    The present invention belongs to the field of electronics and, more specifically, to piezoelectric devices on a nanometric scale for collecting mechanical energy.
    State of the art
    There is a need for electric generators that can provide power with high impact resistance and quality factor.
    Previous MEMS devices (MEMS stands for microelectromechanical systems) use conventional AlN thin film and have the disadvantages of having a limited critical breakage stress and significant stiffness that make them not optimal for environmental vibration applications. In addition, until now, they require external power management and control circuits that make integration and manufacturing on a large scale difficult.
    Recently an approach based on piezoelectric nanofibers has been proposed. However, this previous device has several disadvantages: low fiber surface density, low integration capacity, difficult to obtain a large number of aligned fibers, contamination of the substrate due to fiber nitration / oxidation. In addition, it requires a complex technological development (electro-spinning). In addition, this device is less compatible with VLSI silicon technologies (large-scale integration).
    In recent years, ZnO nanowires have been used as a piezoelectric material, because they can be grown economically and easily by a hydrothermal method. The main application has been the collection of energy and sensors, but the devices have been mainly bulky macroscopic devices dedicated to generating the greatest possible power. However, MEMS technology has not been used to successfully combine these nanostructures with mobile devices on a micrometric scale to select the small energy niche offered by environmental vibrations as a target.
    Document US20050134149A1 proposes a piezoelectric vibration collection device that has a plate stack structure with a mass
    5
    10
    fifteen
    twenty
    25
    30
    35
    test over. This proposal is different from the present invention, in addition to its provision, because the proposed invention uses ZnO nanostructures as the main piezoelectric material instead of thin films. In addition, the devices according to the invention can monolithically integrate diodes and capacitors.
    Brief description of the invention
    The invention is dedicated to developing a family of silicon-compatible piezoelectric nanostructured devices with integrated buffer and rectification charge storage capacitor that can collect energy from mechanical movements.
    According to the invention, a piezoelectric energy collection device comprises an anchored part, an inertial mass and a flexible mobile structure. The flexible structure comprises a piezoelectric layer with a plurality of nanostructures. A capacitor is formed between a lower electrode of a highly doped region and an upper electrode of a metal layer and a diode is formed between said metal layer and a slightly doped region in the anchored part, the diode is in series with the capacitor.
    Preferably, the flexible structure is a cantilever beam between the anchored part and the inertial mass, however other mobile structures are possible. For example, a beam fastened at both ends, a coil suspension, a membrane or other elastic element that can play the role of spring or spring.
    The cantilever beam is designed to bend causing so! that the piezoelectric nanostructures generate a current induced by piezoelectric potential rectified by the diode and stored by the capacitor. Preferably, a seed layer is formed comprising Au under the piezoelectric layer consisting of ZnO to grow nanowires as nanostructures. Preferably, the length of the nanowires is from 100 nm to 10 pm. Alternatively, a seed layer comprising AlN is formed under the piezoelectric layer consisting of ZnO to grow nanolamines as nanostructures. Preferably, the diameter of the nanolamines ranges between 100 nm and 10 pm.
    The capacitor electrodes extend from the cantilever beam to the anchored part but, preferably, can be extended to cover the entire available chip surface to maximize the capacitance value.
    5
    10
    fifteen
    twenty
    25
    30
    35
    Preferably, the substrate material is crystalline silicon of type n.
    Alternatively, the substrate material is crystalline silicon of type p.
    According to the invention, an energy collection system is also proposed. The system comprises an array of piezoelectric energy collection devices, in which adjacent devices are stacked leaving a gap between them for the movement of the inertial mass.
    Preferably, the energy collection devices are combined in series. Alternatively, the energy collection devices are combined in parallel.
    In summary, a new approach is proposed to produce piezoelectric MEMS energy collection devices, also called MEMS collectors. The proposed devices are based on nanowires (NW) and nanolamines (NS) as a piezoelectric material with a diode and capacitor monolithically integrated in a silicon compatible technology.
    In some embodiments, ZnO is chosen as a low cost solution to grow NW and NS by a hydrothermal method. ZnO also provides greater supported tension, enhanced flexibility and reduced manufacturing cost. At the same time, it is much easier to integrate with silicon than other approaches based on nanostructures. The device allows an out-of-plane movement when mechanically excited.
    The proposed energy collection device contains a monolithically integrated Schottky diode and capacitor in addition to the piezoelectric nanogenerator which allows storage of the damping load and rectification of the signal in situ.
    Positively, several energy collection devices can be combined to maximize the extra power without worrying about the phases of the AC (Alternating Current) signals at the output. The compensation between the size and the number of energy collection devices shows that several smaller devices directed at different resonance frequencies can obtain a higher power density generated than a single larger unit with the same global size. The invention has additional advantages: superior overall flexibility and lower risk of breakage, better performance and integrated storage and rectification. This combination of power production reliably improves known state-of-the-art devices.
    These and other aspects of the invention will be apparent from the drawings and embodiments by way of example.
    5
    10
    fifteen
    twenty
    25
    30
    35
    Brief description of the drawings
    A series of drawings that help to better understand the invention and that are expressly related to embodiments of said invention, presented as a non-limiting example thereof, are briefly described below.
    Figure 1: Functional device configuration. (Left) A cantilever structure for out-of-plane mechanical movements, with the two different ZnO nanostructures for the piezoelectric transduction: nanowires (right-bottom) and nanolamines (right-top)
    Figure 2: Several views of ZnO nanowires. Figure 2a is a global view. Figure 2b is a detailed view. Figure 2c shows a top view of nanolamines. Figure 2d shows an inclined view.
    Figure 3 is a cross section of the final device constructed on an SOI substrate.
    Figure 4 is an X-ray diffraction measurement (XRD) of ZnO nanolamines grown on a seed layer of AlN.
    Detailed description
    Several embodiments will be discussed to better understand the invention.
    As indicated above, one of the objectives of this invention is to make the energy collection device robust enough, that it can function reliably under the conditions imposed. To this end, piezoelectric nanostructures, also generally known as nanogenerators (NG), are adopted instead of thin films.
    The approach takes advantage of ZnO as a transduction material to convert the mechanical energy from the input accelerations present in the environment to two different cases. Two types of ZnO nanostructures will be integrated to obtain usable devices: nanowires (NW) and nanolamines (NS).
    Both NW and NS can be generated by sharing virtually the same manufacturing process: These ZnO nanostructures have the peculiarities of using:
    - the entire surface of the chip to manufacture the storage capacitor,
    - the upper electrode of this capacitor as a seed layer to grow the ZnO nanostructures above the cantilever to be curved, and
    5
    10
    fifteen
    twenty
    25
    30
    35
    - a small region of silicon chip without doping to integrate Schottky diodes monolithically.
    Device layout
    Figure 1 shows the configuration of one of the end devices. The common configuration of the different design versions is based on a cantilever architecture, because the current silicon-based piezoelectric collection devices show the best performance with a mass-spring system. However, other suspensions may be used, such as beams attached at both ends, coil bending, membranes or other elastic elements instead of the cantilever beam.
    An inertial mass 11 is connected through a cantilever beam 16 to the rest of chip 13. Above this overhang is a piezoelectric layer 15 composed of Nanostructures of ZnO. Monoltically integrated in the same chip 13, there is a Schottky diode 12 and a capacitor 14.
    Several sizes will be generated to obtain different resonance frequencies, and combined to obtain matrices of multiple frequencies of energy collection devices. The typical lateral dimensions of the overhangs and the inertial mass will range between 0.5 and 5 mm, and the target thickness of the piezoelectric layer will be approximately 1 pm for the first prototype. Collection devices can be combined to produce a matrix according to a series or parallel combination thereof. Depending on this electrical combination, an increase in the current or output voltage levels will be obtained for series and parallel combinations, respectively. In order to physically combine the devices, they can be stacked leaving enough space between them for the resonant movement of the inertial mass.
    As illustrated in Figure 3, the spring is constructed by means of microstructured silicon beams on the SOI device layer and is covered by the different piezoelectric material that plays the role of mechanical spring and transducer. The inertial mass 11 is created by etching the upper and lower silicon layer of the SOI wafer (silicon on insulator) by RIE (reactive ionic etching) and DRIE (deep reactive ionic etching), respectively. The unrecorded part that corresponds to the chip frame that will form the anchored part 17.
    The use of a SOI wafer facilitates the definition of cantilever beam 16 and inertial mass 11. This wafer will be of type n in order to integrate a Schottky diode 12 and a capacitor 14 together with the mobile structure. Diode 12 will have the role of rectifying, with few losses, the AC signal generated by the NGs that at the same
    5
    10
    fifteen
    twenty
    25
    30
    35
    time will grow just above the large surface of capacitor 14 to save space.
    This configuration creates a network of a diode 12, layer 15 of piezoelectric AC as a generator and a capacitor 14 in series, therefore for each mechanical stimulation on the NG, negative charges will be stored in the capacitor 14. Due to the rectification in situ, Different designs with different sizes can be connected together and the voltage production will always add up. For example, longer overhangs 13 and / or larger inertial masses 11 will result in lower resonance frequencies and thicker beams and / or stiffer materials will increase the resonance frequencies.
    materials
    These devices use an SOI wafer as the main structural part. The substrate is chosen in order to facilitate the definitions of the inertial mass and the beam. Then two different piezoelectric materials are used:
    AlN: This piezoelectric material has been used for several years to manufacture FBAR (acoustic wave resonator of film volume) and energy collectors. AlN is used as a seed layer to grow NS of ZnO that will adapt to a functional nanostructured piezoelectric layer. AlN is processed by cathodic RF pulverization on a thin layer of Ti / Pt that confers a good crystalline orientation. Thin layers of less than 100 nm can be deposited and the XRD analysis of Figure 4 shows that the crystalline structure and orientation are stable. The final thickness used in this type of devices can be between 10 nm and 1 um.
    ZnO: This piezoelectric and semiconductor material will be used to grow nanostructures, specifically on nanowires (NW) and nanolamines (NS) of piezoelectric ZnO. In recent years, NG of ZnO has been used for energy collection. These nanostructures have the advantages of being more flexible, less sensitive to breakage, and can be acted upon more easily than on thin films. The growth method is based on a low temperature hydrothermal chemical reaction (<80 ° C) directly on the silicon substrate covered by a seed layer. This method of growth is especially fast, easy, economical and fully compatible with silicon-based microelectronic technologies at the wafer level.
    Figure 2 shows the two types of ZnO nanostructures that will be used to make the devices.
    In the case of NS, a thin layer of AlN is used (the thickness may be less than <100 nm) as the seed layer, anti-shielding barrier and material
    5
    10
    fifteen
    twenty
    25
    30
    35
    additional piezoelectric. In this way, the thin layer of AlN should not affect the mechanical properties of the device because the tension created decreases with the thickness. The growth method for NS of ZnO is the same as for NW, but a different seed layer is used that totally affects the shape of the nanostructure that is grown. The main point that makes this nanostructure a promising solution for NG is the high uniformity, reproducibility and rapidity of NS growth.
    Several studies have been carried out in order to verify that ZnO NS that are grown on AlN have a good crystallinity and therefore piezoelectric properties.
    Figure 2 shows the result of an electron diffraction in the selected area (SAED) generated in a TEM of a single NS layer in which a high crystallinity of the material can be observed. It can also be seen in Figure 2 that the direction of growth is perpendicular to the c axis, unlike a typical NW of ZnO that grows along the c axis. In the case of NS, a preferable growth plane (0001) can be observed at the expense of the inhibition of the growth plane {1010}, which is completely reversed in the case of NW. In addition, the hexagonal size of the ZnO crystals, typical of a crystalline wurtzite net, is clear. The hexagonal crystal can have a diameter of more than 1-5 pm and a thickness of less than 20 nm which means an enormous aspect ratio greater than 100.
    An XRD study was also carried out to observe other crystalline orientations present in an NS matrix. The result can be seen in Figure 4. A prominent peak can be observed for the desired orientation (002) of the ZnO, the contribution of the AlN thin film can also be clearly seen.
    Process Flow
    As already mentioned, a capacitor and a diode will be integrated together with the energy collection device in order to have a compact system that can obtain a DC voltage (Continuous Current) from a variable input acceleration. The manufacturing process is aimed at being compatible with low demanding CMOS technologies.
    Below are the stages of the process that must be followed to carry out the technological manufacturing, including seven photolithographic stages:
    1. An implantation of n + is performed in selected areas of the SOI device layer doped with n by a protective oxide that was grown earlier. This implantation will define the ohmic contact with silicon and the lower electrode of the capacitor. (Mask N +)
    5
    10
    fifteen
    twenty
    25
    30
    35
    2. A field oxidation of 1060 nm is carried out in order to passivate the different devices. By means of reactive ionic etching (RIE) and wet etching this oxide can be selectively removed to define active regions. (Mask of active areas)
    3. Perform a gate oxidation of 365 A at 950 ° C to create the thin oxide layer necessary to produce the condenser.
    4. Remove this thin oxide by dry and wet engravings from contact areas to allow electrical access to the different contacts. (Contact mask)
    5. Above these contact areas, a Cr / Ni / Au multilayer will be sprayed to create the upper capacitor electrode, the metal-semiconductor contact surface of the Schottky diode and the metal contacts. The capacitor electrode can be designed to cover the entire surface of the available chip to maximize its load capacity which is a great improvement compared to devices of the prior art. The last exposed Au layer will also be used as a seed layer to grow NW of ZnO.
    6. In order to manufacture the version of this NS-based device of ZnO, a Ti / Pt layer will be deposited followed by a 100 nm AlN layer by RF cathode spray to generate the seed layer for these nanostructures.
    7. The total metal multilayer and seed layer, when applicable, are subsequently recorded in selected areas. (Metal mask 1)
    8. ZnO nanowires and nanolamines will be grown by a hydrothermal process on the respective seed layers deposited on the upper electrode of the condenser, which makes this device unique.
    9. A layer of polymer (for example PMMA, PDMS or SU8) will be coated by centrifugation (Spin-coating) on the surface and revealed to embed NW / NS to avoid short circuits between NG electrodes, if necessary.
    10. A thick layer of aluminum will be deposited (other metals such as titanium and platinum can also be used), lithographed and etched to cover the embedded NW / NS, creating the upper NG electrode. (Metal mask 2).
    11. The outline of the mobile structures on the side of the device (front RIE mask) is photolithographed and the layer of the SOI device is recorded using RIE.
    12. On the back side, aluminum is deposited, photolithographed and recorded to create a hard DRIE mask. (DRIE rear mask).
    5
    10
    fifteen
    twenty
    25
    30
    13. The SOI manipulation wafer is completely etched to the buried oxide by DRIE. Before performing this stage, a resistant protective layer is coated on the front side.
    14. The structures are carefully peeled off by wet etching of SiO2 and the resistant layer coating is dissolved by acetone immersion.
    The final device is a piezoelectric cantilever beam loaded on the detached tip with integrated capacitor and diode as shown in Figure 3.
    This integration reduces the power losses and facilitates the combination of several generators without the need to control the phase differences of the generated piezoelectric potentials (that is, no synchronization of resonant movements is necessary).
    performance
    For the NW-based device of ZnO, it is assumed that the density of NW will be ~ 4 NW / pm2. If each NW takes an active part in the load generation, and from a value of 4 pW / NW measured when a NW is curved by an AFM tip [4], a generated power of ~ 1.6 mW / can be estimated. cm2 However, in the present case the mechanical stimulation will be produced by the compression of the NW matrices derived from the bending of the beam and a typical transduction surface of 1 mm2. A power production of 1.45 mW / cm2 (for a transduction area of ~ 4 mm2) has been reported for a structure similar to that placed above the integrated condenser for pressure levels similar to those achieved with the bending of The cantilever beam. Taking into account the present device configuration (transduction area of ~ 1 mm2, acceleration of 1-10 g, main voltage of 1-10 MPa), an objective output power of 500 pW / cm2 is a reasonable value.
    In the case of NS, no previous data is available, but comparable power densities are expected due to the dimensions and configuration of similar crystals of both NW and NS.
    From previous results, obtained using similar structures but with a thin film approach, a lower limit value can be estimated for the present prototypes.
    For the first prototype, the dimensions of the final devices will be 0.5x0.5x0.05 cm3, and will be based on a type n SOI wafer. A glass or silicon frame or support is expected to be used to allow the inertial mass to
    move up and down. This support frame can increase the thickness of the final device by 0.05 cm.
    REFERENCE NUMBERS 5 11 Inertial mass.
    12 Schottky diode.
    13 Chip that forms the device.
    14 Condenser
    15 Piezoelectric layer.
    10 16 Cantilever beam.
    17 Anchored part.
    权利要求:
    Claims (11)
    [1]
    5
    10
    fifteen
    twenty
    25
    30
    35
    1. Piezoelectric energy collection device, comprising:
    - an anchored part (17);
    - an inertial mass (11);
    - a flexible structure; characterized by:
    - the flexible structure comprises a piezoelectric layer (15) with a plurality of nanostructures;
    - a capacitor (14) is formed between a lower electrode of a highly doped region and an upper electrode of a metal layer; Y
    - a diode (12) is formed between said metal layer and a slightly doped region in the anchored part (17), the diode (12) being in series with the capacitor
    (14),
    in which the flexible structure is configured to bend causing the piezoelectric nanostructures to generate a current induced by piezoelectric potential rectified by the diode (12) and stored by the capacitor (14).
    [2]
    2. Device according to claim 1, wherein the movable structure is a cantilever beam (16) between the anchored part (17) and the inertial mass (11).
    [3]
    3. Device according to claim 1 or 2, wherein a seed layer comprising Au is formed under the piezoelectric layer (15) constituted by ZnO and the nanostructures are nanowires.
    [4]
    4. Device according to claim 3, wherein the length of the nanowires is from 100 nm to 10 pm.
    [5]
    5. Device according to claim 1 or 2, wherein a seed layer comprising AlN is formed under the piezoelectric layer (15) constituted by ZnO and the nanostructures are nanolamines.
    [6]
    6. Device according to claim 5, wherein the diameter of the nanolamines ranges between 100 nm and 10 pm.
    [7]
    7. Device according to any of the claims, wherein the capacitor electrodes (14) extend from the flexible structure to the anchored part (17).
    [8]
    8. Device according to any of the claims, wherein the substrate material is crystalline silicon of type n.
    Device according to any one of claims 1 to 7, wherein the material of
    substrate is crystalline silicon type p.
    [10]
    10. Energy collection system comprising an array of piezoelectric energy collection devices according to any one of claims 1 to 9,
    10 in which adjacent devices are stacked leaving a gap between them for the movement of the inertial mass (11).
    [11]
    11. System according to claim 10, wherein the energy collection devices are combined in series.
    fifteen
    [12]
    12. The system according to claim 10, wherein the energy collection devices are combined in parallel.
    类似技术:
    公开号 | 公开日 | 专利标题
    Liu et al.2018|A comprehensive review on piezoelectric energy harvesting technology: Materials, mechanisms, and applications
    Toprak et al.2014|Piezoelectric energy harvesting: State-of-the-art and challenges
    ES2597983B1|2017-12-12|Piezoelectric energy collection system and device
    Liu et al.2012|Investigation of a MEMS piezoelectric energy harvester system with a frequency-widened-bandwidth mechanism introduced by mechanical stoppers
    US20100084947A1|2010-04-08|High Efficiency Piezoelectric Energy Harvester Having Spiral Structure
    US20100117488A1|2010-05-13|Piezoelectric and semiconducting coupled nanogenerators
    US11012006B2|2021-05-18|Micro electromechanical system | energy harvester with residual stress induced instability
    US20120206016A1|2012-08-16|Piezoelectric micromechanical energy harvesters
    US20120049694A1|2012-03-01|Micromachined Piezoelectric Energy Harvester with Polymer Beam
    Xu et al.2012|Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters
    US20130241346A1|2013-09-19|Device for converting mechanical energy into electrical energy
    Wen et al.2015|Improving voltage output with PZT beam array for MEMS-based vibration energy harvester: Theory and experiment
    Kirubaveni et al.2015|Analysis of rectangular and triangular end array type piezoelectric vibration energy harvester
    WO2011129855A2|2011-10-20|Wide-bandwidth mems-scale piezoelectric energy harvesting device
    Jagtap et al.2011|Geometry optimization of a MEMS-based energy harvesting device
    Iqbal et al.2015|Comparison of seven cantilever designs for piezoelectric energy harvester based on Mo/AlN/3C-SiC
    Crovetto et al.2012|MEMS fabricated energy harvesting device with 2D resonant structure
    Tao et al.2019|MEMS/NEMS-enabled energy harvesters as self-powered sensors
    Kim et al.2012|2D vibration based MEMS energy harvester
    Ramadan et al.2011|Fabrication of SU-8 low frequency electrostatic energy harvester
    Sil et al.2018|Investigation of design parameters in mems based piezoelectric vibration energy harvester
    Toprak2017|MEMS scale CMOS compatible energy harvesters using piezoelectric polymers for sustainable electronics
    Tiwari et al.2013|Study of different energy scavenging techniques through vibration and its micro power applications
    Murillo et al.2011|Hybrid resonant energy harvester integrating ZnO NWs with MEMS for enabling zero-power wireless sensor nodes
    Nabar et al.2012|A NEMS vibration energy harvester using ordered piezoelectric Zinc Oxide nanowire arrays
    同族专利:
    公开号 | 公开日
    EP3319133A1|2018-05-09|
    US20200228032A1|2020-07-16|
    WO2016207458A1|2016-12-29|
    ES2597983B1|2017-12-12|
    EP3319133A4|2018-09-12|
    ES2597983R2|2017-02-28|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US20050134149A1|2003-07-11|2005-06-23|Deng Ken K.|Piezoelectric vibration energy harvesting device|
    US8829767B2|2011-05-17|2014-09-09|Georgia Tech Research Corporation|Large-scale fabrication of vertically aligned ZnO nanowire arrays|
    KR101906589B1|2011-08-30|2018-10-11|한국전자통신연구원|Apparatus for Harvesting and Storaging Piezoelectric Energy and Manufacturing Method Thereof|EP3351291A1|2017-01-20|2018-07-25|Consejo Superior De Investigaciones Científicas |Self-generating voltage device for electrical cell stimulation, and method thereof|
    EP3579290A1|2018-06-04|2019-12-11|Shimco North America Inc.|1d/2d hybrid piezoelectric nanogenerator and method for making same|
    CN110331388B|2019-06-26|2021-05-28|五邑大学|Method for rapidly growing ZnO nano-porous film based on hydrothermal method|
    法律状态:
    2017-12-12| FG2A| Definitive protection|Ref document number: 2597983 Country of ref document: ES Kind code of ref document: B1 Effective date: 20171212 |
    优先权:
    申请号 | 申请日 | 专利标题
    ES201530896A|ES2597983B1|2015-06-24|2015-06-24|Piezoelectric energy collection system and device|ES201530896A| ES2597983B1|2015-06-24|2015-06-24|Piezoelectric energy collection system and device|
    PCT/ES2016/070381| WO2016207458A1|2015-06-24|2016-05-20|System and device for collecting piezoelectric energy|
    US15/757,965| US20200228032A1|2015-06-24|2016-05-20|System and device for collecting piezoelectric energy|
    EP16813778.4A| EP3319133A4|2015-06-24|2016-05-20|System and device for collecting piezoelectric energy|
    [返回顶部]