• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a method for producing dielectric and/or barrier layers on a substrate, characterised in that it comprises the following steps: (a) cleaning substrates, (b) placing the substrate in a sample carrier and introducing same into a vacuum chamber, (c) dosing an inert gas and a reactive gas into said vacuum chamber, (d) injecting, into said vacuum chamber, a volatile precursor that has at least one cation of the compound to be deposited, (e) activating a radiofrequency source and activating at least one magnetron, (f) decomposition of the volatile precursor by plasma, producing the reaction between the cation of the volatile precursor and the reactive gas at the same time as the reaction is produced between the reactive gas contained in the plasma with the cation generated from the target by cathode sputtering, thereby generating the deposition of the film on the substrate. The invention also relates to the device for carrying out said method.
    公开号:ES2542252A2
    申请号:ES201590049
    申请日:2013-11-27
    公开日:2015-08-03
    发明作者:Jorge Gil Rostra；Victor RICO GAVIRA；Francisco Yubero Valencia；Juan Pedro ESPINÓS MANZORRO；Agustín RODRÍGUEZ GONZÁLEZ-ELIPE；Emilio SÁNCHEZ CORTEZÓN；José María DELGADO SÁNCHEZ
    申请人:Abengoa Solar New Technologies SA；
    IPC主号:
    专利说明:

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    权利要求:
    Claims (1)
    [1]
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    类似技术:
    公开号 | 公开日 | 专利标题
    ES2542252A2|2015-08-03|Method for producing a dielectric and/or barrier layer or multilayer on a substrate, and device for implementing said method
    WO2013036667A3|2013-05-02|Flowable silicon-carbon-nitrogen layers for semiconductor processing
    WO2009014394A3|2009-03-19|Method for depositing ceramic thin film by sputtering using non-conductive target
    JP2015519477A|2015-07-09|Sputtering method for pre-stabilized plasma processing
    WO2012118955A3|2012-11-15|Apparatus and process for atomic layer deposition
    SG165295A1|2010-10-28|Electron beam vapor deposition apparatus for depositing multi-layer coating
    SG188537A1|2013-04-30|Plasma-activated deposition of conformal films
    WO2012061232A3|2012-06-28|Method of depositing dielectric films using microwave plasma
    US9045826B2|2015-06-02|Thin film deposition apparatus and thin film deposition method using the same
    JP2013229608A5|2016-05-19|
    JP2013019053A5|2015-08-27|
    MX2015014977A|2016-02-05|Method of manufacturing multi-layer thin film, member including the same and electronic product including the same.
    JP2013189707A5|2016-02-04|Deposition equipment
    MX364356B|2019-04-08|Hipims layering.
    KR20170067847A|2017-06-16|Method for forming film on flexible substrate using vapor phase deposition method
    EP3444376A3|2019-06-26|Method for forming metal oxide layer, and plasma-enhanced chemical vapor deposition device
    RU2013136544A|2015-02-10|METHOD FOR DEPOSITING A TRANSPARENT BARRIER MULTILAYERED SYSTEM
    US20120164460A1|2012-06-28|Coated article and method for making the same
    RU2013136554A|2015-02-10|METHOD FOR DEPOSITING THE SYSTEM OF TRANSPARENT BARRIER LAYERS
    US20120164459A1|2012-06-28|Coated article and method for making the same
    WO2012093808A3|2012-09-27|Method and device for fingerprint resistant coating
    KR20140140524A|2014-12-09|Thin Film Deposition Method, and Thin Film Deposition Apparatus
    TW201612345A|2016-04-01|Methods and apparatus for maintaining low non-uniformity over target life
    JP5478324B2|2014-04-23|Cleaning apparatus, film forming apparatus, and film forming method
    KR101539095B1|2015-07-24|Thin Film Deposition Apparatus, and Linear Source therefor
    同族专利:
    公开号 | 公开日
    KR20150099764A|2015-09-01|
    WO2014083218A1|2014-06-05|
    ES2542252B1|2016-05-25|
    ES2542252R1|2015-08-17|
    CN104955978A|2015-09-30|
    US20150325418A1|2015-11-12|
    EP2738790A1|2014-06-04|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US4668365A|1984-10-25|1987-05-26|Applied Materials, Inc.|Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition|
    US6176983B1|1997-09-03|2001-01-23|Vlsi Technology, Inc.|Methods of forming a semiconductor device|
    DE19824364A1|1998-05-30|1999-12-02|Bosch Gmbh Robert|Process for applying a wear protection layer system with optical properties to surfaces|
    US6841044B1|2002-08-28|2005-01-11|Novellus Systems, Inc.|Chemically-enhanced physical vapor deposition|
    FR2922362B1|2007-10-16|2009-12-18|Avancis Gmbh & Co Kg|IMPROVEMENTS TO A CONNECTION HOUSING FOR ELEMENTS CAPABLE OF COLLECTING LIGHT.|
    US8288276B2|2008-12-30|2012-10-16|International Business Machines Corporation|Method of forming an interconnect structure including a metallic interfacial layer located at a bottom via portion|
    DE102010055659A1|2010-12-22|2012-06-28|Technische Universität Dresden|Method for depositing dielectric layers in vacuum and use of the method|DE102015101025A1|2015-01-23|2016-07-28|Von Ardenne Gmbh|Method and apparatus for depositing a doped metal oxide layer|
    FR3045033B1|2015-12-09|2020-12-11|Saint Gobain|PROCESS AND INSTALLATION FOR OBTAINING COLORED GLAZING|
    DE102017003042B3|2017-03-29|2018-08-16|Rodenstock Gmbh|Gradient hard layer with changing modulus of elasticity|
    WO2019097023A1|2017-11-17|2019-05-23|Centre National De La Recherche Scientifique|Reactor for depositing layers and associated deposition process|
    FR3073864A1|2017-11-28|2019-05-24|Centre National De La Recherche Scientifique|LAYER DEPOSITION REACTOR AND ASSOCIATED DEPOSITION METHOD|
    法律状态:
    2016-05-25| FG2A| Definitive protection|Ref document number: 2542252 Country of ref document: ES Kind code of ref document: B1 Effective date: 20160525 |
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    优先权:
    申请号 | 申请日 | 专利标题
    EP12380053.4A|EP2738790A1|2012-11-28|2012-11-28|Procedure for preparing one single barrier and/or dielectric layer or multilayer on a substrate and device for the implementation thereof|
    EP12380053|2012-11-28|
    PCT/ES2013/000264|WO2014083218A1|2012-11-28|2013-11-27|Method for producing a dielectric and/or barrier layer or multilayer on a substrate, and device for implementing said method|
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