• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
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  • 优先权
    • 专利摘要:
    The invention proposes a watch oscillator spring (100), comprising a spirally active part about an axis (D) of substantially rectangular section between an outer surface (1) and an inner surface (2), a upper surface (3) and a lower surface (4). The spiral (100) comprises an internal structure (5) of silicon, and a peripheral layer (6) of SiO 2 for its thermal compensation, which comprises, in the active part, an outer relief (7) in the vicinity of said outer surface ( 1) and / or an inner relief (8) in the vicinity of said inner surface (2). The geometric profile of said outer (7) and / or inner (8) relief is such that, in each elementary slice delimited by two adjacent sections of the active part, the ratio between the total volume of SiO 2 and the total volume of silicon in the same said elementary slice, has a value that is constant for all the active part.
    公开号:CH713269A2
    申请号:CH01699/16
    申请日:2016-12-21
    公开日:2018-06-29
    发明作者:Verardo Marco；Charbon Christian；Frosio Roberto；Cusin Pierre
    申请人:Nivarox Sa；
    IPC主号:
    专利说明:

    Description
    FIELD OF THE INVENTION [0001] The invention relates to a horological oscillator hairspring, comprising, between an inner and an outer hinge, an active part wound in a spiral around a main axis, and inscribed between a plane upper and lower plane perpendicular to said main axis, said active portion being of substantially rectangular or trapezoidal section in any plane passing through said main axis, and inscribed in a rectangle of height parallel to said main axis and of width perpendicular to said main axis, said width extending between an outer surface and an inner surface, and said height extending between an upper surface and a lower surface, said spiral having an internal silicon structure, and having a peripheral layer of SiO 2 for its thermal compensation.
    The invention also relates to a clock oscillator comprising at least one such spiral.
    The invention also relates to a watch movement comprising such an oscillator.
    The invention also relates to a watch comprising such a movement.
    The invention relates to the field of clockwork oscillator mechanisms.
    BACKGROUND OF THE INVENTION [0006] An efficient design of a silicon balance spring for a clock oscillator requires the modulation of its geometry, and in particular the width of certain portions of its turn, to guarantee the resonator remarkable properties of isochronism.
    In addition, preferably, such a spiral comprises on its outer surface a silicon oxide SiO 2 layer, the purpose of which is to ensure a spiral-balance assembly, in which is incorporated this spiral, a natural frequency d oscillation independent of the temperature.
    However, an economically viable production of such spirals requires the growth of an oxide layer of constant thickness on all surfaces of the spiral, due to the constraints of the manufacturing process. It is thus understood that the thickness of silicon oxide SiO 2, which should be in adequacy with the turn width, and which can be determined inter alia by this coil width, can not at any point of the turn show a thickness adapted, especially in the sections whose width is increased.
    [0009] Patent applications CH 710 581 A1 in the name of Sigatec, and EP 1 422 436 in the name of CSEM, propose to constrain the silicon oxide to grow, not on the surface, but in slot-like cavities. previously dug into the spire. The width of the slot, or its trajectory, could then be adjusted locally and compensate for changes in coil width. This way of proceeding shows several disadvantages: [0010] the silicon oxide, by filling the slots, is then not disposed on the outer fiber of the coil, where it would have the most effect for the thermal compensation; - The precise control of the width of the slot, and therefore the compensating power, proves extremely difficult, at the scale where we try to control it, which is of the order of ten nanometers; the filling of the slot with oxide is obtained by the meeting of two growth fronts from the two sides opposite said slot, and therefore: the filling of a slot by means of The oxide strongly prestresses the material, to degrees certainly not homogeneous and difficult to control; • It is very difficult to guarantee the strength and mechanical strength of the two parts separated by the slot, but bound by the oxide, and the absence of "inter-fronts" micro-interstices, conducive to the absorption of moisture . SUMMARY OF THE INVENTION [0011] The present invention aims to modulate, in particular increase, on selected sections, the Si / SiO 2 ratio, to guarantee at all points of the coil an exact temperature compensation and locally adjusted.
    For this purpose, the invention relates to a clock oscillator hairspring according to claim 1.
    The invention also relates to a clock oscillator comprising at least one such spiral.
    The invention also relates to a watch movement comprising such an oscillator.
    The invention also relates to a watch comprising such a movement.
    BRIEF DESCRIPTION OF THE DRAWINGS [0016] Other features and advantages of the invention will appear on reading the detailed description which follows, with reference to the appended drawings, in which: FIG. 1 schematically shows, in perspective, a watch oscillator hairspring, comprising, between an inner ring and an outer attachment, an active part wound in a spiral around a main axis; fig. 2 shows, schematically, and in side view, the hairspring of FIG. 1; fig. 3 represents, schematically, and in section through a plane perpendicular to the main axis, a section of such a silicon spiral, subjected to a thermal growth treatment of silicon oxide for its temperature stabilization, in a conventional execution with smooth and straight edges, in a zone of variation of section, where the peripheral layer of silicon oxide remains of constant thickness while the internal amount of silicon varies significantly; fig. 4 shows, similarly to FIG. 3, a section of a hairspring according to the invention, comprising a relief on some of its outer surfaces, in particular the lateral surfaces, to increase the area, and therefore the volume, of silicon oxide per unit length ; fig. 5 shows schematically and in perspective, the spiral section of FIG. 4; figs. 6 to 15 illustrate, very schematically, non-limiting examples of reliefs according to the invention, these non-limiting examples being illustrated in the form of periodic profiles: FIG. 6: modulation of the thickness by smooth function, sinusoidal type; Fig. 7: modulation of the thickness by smooth function, in alternations with a curved profile, whose alternating shafts differ from the outgoing alternations; Fig. 8: modulation of the thickness by linear function, by piece; Fig. 9 to 11: modulation of the thickness by constant function per piece, with different distributions within a step; Fig. 12: over-modulation of the thickness, by micro-relief according to a smooth function, of uniform sinusoidal type, on the basis of a macro-relief according to FIG. 6; Fig. 13: over-modulation of the thickness, by micro-relief according to a smooth function, of distributed sinusoidal type, on the basis of a macro-relief according to FIG. 6; Fig. 14: modulation of the period, constant amplitude, on a spiral section with linearly progressive widening; Fig. 15: modulation of the amplitude, at constant period, on a spiral section with linearly progressive enlargement; fig. 16 shows, schematically, and in top view, a hairspring according to the invention, on the basis of a conventional hairspring according to FIG. 1, locally comprising an external relief and an internal relief according to FIG. 6; fig. 17 shows, schematically, and in section passing through its main axis, a spiral according to FIG. 1 or 16, and the following figures illustrate schematically and in perspective, several embodiments of a spiral according to the invention, brought to an elementary section: FIG. 18 with a macro-relief, of substantially sinusoidal type, on the outer and inner surfaces; fig. 19 with a micro-relief, of substantially sinusoidal type, on the outer and inner surfaces; fig. 20 with the combination of macro-relief and micro-relief of fig. 18 and 19; figs. 21 to 28 illustrate complementary variants where, in addition to a relief on the outer or inner surface as visible in FIGS. 18 to 20 put not shown not to complicate the figures, the spiral locally comprises an upper relief and a lower relief: in fig. 21 a macro-relief substantially sinusoidal profile and extending along the spiral spiral curve, cou pe in two planes, with its section in fig. 22; in fig. 23 to 25, in section: a micro-relief of small depth, a macro-relief of great depth, and the combination of both; in fig. A macro-relief with substantially pyramidal pockets disjoint, the orientation of the pyramids being fixed relative to the crystalline axes in case of wet etching; in fig. A macro-relief of substantially sinusoidal profile and extending radially from the main axis; in fig. 28 a cross-chevron macro-relief; figs. 29 to 31 illustrate, similarly to FIGS. 3 and 4, and successively, the distribution of silicon oxide in a coil of a standard spiral, and two spirals according to the invention, with surface geometries, micro-relief and macro-relief, modulating the turn surface per unit turn length; fig. 32 shows schematically and in section passing through its main axis, a section of a spiral made by upper and lower etching of an assembly of two wafers, or by the assembly of two elementary spirals with mirror geometry, assembled in a median plane of the assembled hairspring; fig. 33 shows, schematically and in section, the deformation, during the growth of SiO 2, of a profile resulting from a uniform, sinusoidal etching in the silicon; fig. 34 is a block diagram showing a watch which comprises a watch movement itself comprising an oscillator with a hairspring according to the invention.
    DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [0017] The object of the invention is to increase the oxidized surface per unit length of coil with a constant oxide thickness. This way of proceeding makes it possible to increase the ratio SiO 2 / Si per unit length of turn. By proceeding locally, along the turn, with particular geometries (with a constant or modulated period), it becomes possible to adjust the SiO 2 / Si ratio and then compensate for an increased thickness of the blade, for example at a outer curve.
    The invention relates to a spiral 100 clock oscillator. This spiral 100 conventionally comprises, between an inner ferrule 102 and an external fastener 103, an active portion 104 wound in a spiral around a main axis D, and inscribed between an upper plane PS and a lower plane PI perpendicular to the main axis D .
    This active part 104 is of substantially rectangular section, or trapezoidal, in any plane passing through the main axis D, and inscribed in a rectangle of height H parallel to the main axis D, and width L perpendicular to the main axis D. This width L extends between an outer surface 1 and an inner surface 2, and the height H extends between an upper surface 3 and a lower surface 4. In a variant, the section of the active part can also be the combination of two trapezes opposed by their large bases or by their respective small bases, in an execution by wafer bonding with incoming or outgoing angle. Other shape variants are conceivable, as part of the usual silicon etching processes, and known combinations of wafers joined together, and engraved in particular double-sided.
    The hairspring 100 has an internal structure 5 made of silicon, and comprises a peripheral layer 6 of SiO 2 for its thermal compensation, of constant thickness E. This internal structure 5 of silicon may be monocrystalline silicon in arbitrary section, or in polycrystalline silicon.
    According to the invention, at least in said active part 104, which may in particular comprise an outer curve of very variable width, the peripheral layer 6 of SiO 2 comprises an outer relief 7 in the vicinity of the outer surface 1, and / or an inner relief 8 in the vicinity of the inner surface 2. And the geometric profile of the outer relief 7 and / or the inner relief 8 is such that, in any elementary slice delimited by two adjacent sections of this active portion 104, the relationship between on the one hand the total volume of SiO 2 of the peripheral layer 6, and on the other hand the total volume of silicon of the internal structure 5 in the same elementary slice, has a value which is perfectly defined at every point of the active part 104 of this spiral 100.
    More particularly, the value of this pure silicon oxide ratio, is constant on a given part of the spiral: over the entire active length, or on a terminal curve, or on the whole spiral, or other.
    In another variant, it is possible to modulate the thickness of SiO 2 so as to compensate for the anisotropic variation of the Young's modulus, so as to have the constant bending stiffness per segment (active part, terminal curve). In this case the thickness depends on the position and preferably the effective thickness of oxide also depends on it, in order to achieve compensation in local temperature.
    In a particular variant, the spiral 100 is such that the value of this pure silicon oxide ratio is included in a constant range on a given part of the spiral. Preferably, the relative variation of this ratio in this range is less than 20%. More particularly, it is less than 10%.
    It is understood that the reliefs are created during the etching of the spiral, before its thermal oxidation, during which a growth of SiO 2 is at any point of the periphery of the spiral. This growth of SiO 2 is substantially uniform, in any case when the SiO 2 layer is thin. Fig. 33 discussed below shows that the oxide growth, if it remains perfectly controllable, is no longer uniform in the case of high SiO 2 thicknesses. The reliefs of the peripheral layer 6 are doc reliefs resulting from the combination of initial etching and oxidation thereafter.
    The total volume of SiO 2 of the peripheral layer 6 is here the total of the external volume of the outer relief 7, the inner volume of the inner relief 8, and silicon oxide SiO 2 layers at the top surface 3 and the lower surface 4e of the spiral 100.
    More particularly, at the outer fastener 103, which may also include such an outer curve, the peripheral layer 6 of SiO 2 comprises an outer relief 7 in the vicinity of the outer surface 1 and / or an inner relief 8 to 2. In the same way, the geometrical profile of the outer relief 7 and / or the inner relief 8 is such that, in any elementary slice delimited by two adjacent sections of the external fastener 103, the ratio between on the one hand the total volume of SiO 2 of the peripheral layer 6, and on the other hand the total volume of silicon of the internal structure 5 in the same elementary slice, has a value which is the same as for the entire active part 104 of the hairspring 100.
    More particularly, the peripheral layer 6 of SiO 2 comprises both such an outer relief 7 in the vicinity of the outer surface 1 and such an inner relief 8 in the vicinity of the inner surface 2.
    Preferably, at least the flat portion of the active portion 104, which is wound in a spiral, is symmetrical with respect to a median plane PM perpendicular to the main axis D and located between the upper plane PS and the lower plane. PI.
    In a particular variant, as visible in particular in FIG. 18, the outer relief 7 and / or inner relief 8 comprises a macro-relief 20, the extension of the profile in a plane perpendicular to the main axis D is a great depth GP, which is greater than 0.100 times the width L of the active part 104.
    In another particular variant, as visible in particular in FIG. 19, the outer relief 7 and / or inner relief 8 comprises a micro-relief 30, the extension of the profile in a plane perpendicular to the main axis D is a small depth PP, which is less than 0.010 times the width L of the active part 104.
    In another variant, as visible in particular in FIG. 20, the outer relief 7 and / or inner relief 8 comprises a micro-relief 30 combined with a macro-relief 20.
    Non-limiting examples of reliefs according to the invention are illustrated in FIGS. 6 to 15, in which they are illustrated in nonlimiting form, with periodic profiles: modulation of the thickness by smooth function, of sinusoidal type / modulation of the thickness by smooth function, alternating with a curved profile / modulation of the thickness per linear function, per piece / modulation of the thickness by constant function per piece, with different distributions within a pitch / over-thickness of the thickness, by micro-relief according to a smooth function, of type sinusoidal, on the basis of a macro-re-lief / over-modulation of the thickness, by micro-relief according to a smooth function, of sinusoidal distributed type, on the basis of a macro-relief / modulation of the period, with a constant amplitude, on a spiral section with linearly progressive widening / constant amplitude modulation, on a spiral section with linearly progressive widening. Fig. 12 shows a profile where modulation is everywhere, and FIG. 13 another profile where the modulation is only in areas of smaller radius of curvature.
    In another variant of the spiral 100, at least in the active portion 104, the peripheral layer 6 of SiCk comprises an upper relief 11 in the vicinity of the upper plane PS and / or a lower relief 12 in the vicinity of the lower plane PI. And the geometric profile of the upper relief 11 and / or the lower relief 12, is such that, in any elementary slice delimited by two adjacent sections of the active portion 104, the ratio between, on the one hand, the total volume of SiO 2 of the layer 6, and secondly the total volume of silicon of the internal structure 5 in the same elementary slice, has a value that is constant for the entire active part 104 of the spiral 1. Note that for this alternative, the Execution of such reliefs on surfaces substantially perpendicular to the main axis of the spiral is more difficult to achieve than surfaces whose generatrices are substantially parallel to the main axis of the spiral.
    It is understood that it is possible to achieve the spiral 100 only with these upper reliefs 11 and 12, without creating outer relief 7 or inner relief 8, since the object of the invention is to increase the volume of Si02, and a higher and / or lower engraving, makes it possible to obtain it. The industrial method of producing an outer relief 7 or an inner relief 8 is however more economical, at the date of the invention.
    The creation of upper reliefs 11 and 12, can therefore be done, with the choice, with or without creation of external relief 7 or internal relief 8. In the case of cumulation, the total volume of Si02 of the peripheral layer 6 is then the total volume of the outer relief 7, the volume of the inner relief 8, the volume of the upper relief 11, and the volume of the lower relief 12.
    More particularly, at the outer attachment 103, which may comprise an outer curve, the peripheral layer 6 of SiO 2 comprises an upper relief 11 in the vicinity of the upper plane PS and / or a lower relief.
    权利要求:
    Claims (21)
    [1]
    12 in the vicinity of the lower plane PI. And the geometric profile of the upper relief 11 and / or the lower relief 12 is such that, in any elementary slice delimited by two adjacent sections of the external fastener 103, the ratio between the total volume of SiO 2 of the peripheral layer 6, and secondly the total volume of silicon of the internal structure 5 in the same elementary slice, has a value which is the same as for all the active part 104 of the spiral 100. [0038] More particularly, the Peripheral layer 6 of SiO 2 comprises both an upper relief 11 in the vicinity of the upper plane PS and a lower relief 12 in the vicinity of the lower plane PI. In a variant, as visible in particular in FIG. 24, the upper relief 11 and / or lower relief 12 comprises a macro-relief 20 whose extension of the profile in the direction of the main axis D is greater than 0.100 times the height H of the active portion 104. [0040] In another variant, as can be seen in particular in FIG. 23, the upper relief 11 and / or lower relief 12 comprises a micro-relief 30 whose extension of the profile in the direction of the main axis D is less than 0.010 times the height H of the active portion 104. [0041] In yet another variant, as can be seen in particular in FIG. 25, the upper relief 3 and / or lower relief 4 comprises a micro-relief 30 combined with a macro-relief 20. More particularly, the width L of the active portion 104 is variable. More particularly, the width L of the outer attachment 103, is variable. More particularly, the height H of the active portion 104 is constant. More particularly, the peripheral layer 6 of SiO 2 comprises a relief of constant amplitude. More particularly, the peripheral layer 6 of SiO 2 comprises a relief with amplitude modulation. More particularly, the peripheral layer 6 of SiO 2 comprises a periodic relief with a constant period. More particularly, the peripheral layer 6 of SiO 2 comprises a cyclic relief with period modulation. FIG. 32 illustrates a particular variant of a spiral made by upper and lower etching of an assembly of two wafers, or by the assembly of two elementary spirals 4I and 4S with mirror geometry, assembled in a median plane of the assembled spiral, with in particular a junction layer 40 which may be SiO 2. Such a hairspring may include, on each of its halves, undercuts, especially during a wafer bonding with outgoing or re-entrant angle. FIG. 33 shows the deformation, during SiO2 growth, of a profile resulting from uniform, sinusoidal etching in silicon. It can be seen that, according to the oxidation time, the SiO.sub.2 layer 6A, 6B, 6C, adopts a profile which moves away from the silicon internal structure base profile 5, in the example illustrated this basic profile is sinusoidal and the curvature of the profile of the SiO 2 layer decreases progressively to a re-entrant angle at the outermost layer 60C. In a way, when one traverses a profile engraved with a ball of engraving, the outgoing parts are widened, whereas the reentrant parts become narrower until presenting a jump of slope. For high SiO 2 thicknesses, the profile is not homothetic to the basic profile. However, the growth of SiO 2 is perfectly reproducible, and the fixed parameters of the complete process of etching in a wafer in the respect of given crystalline angles, and the subsequent oxidation cycle, make it possible to ensure the production of spirals. absolutely identical and having the same behavior. It will be understood that the choice of particular profiles of the spiral 100, taking into account such superpositions of oxide layers taking locally different shapes from the base profile, makes it possible to obtain a local modulation of the ratio between, on the one hand, the total volume of Si02 of the peripheral layer 6, and secondly the total volume of silicon of the internal structure 5 in the same elementary slice. The invention also relates to a clock oscillator 10 comprising at least one spiral 100. [0052] The invention also relates to a watch movement 100 comprising such an oscillator 10. a watch 1000 comprising such a movement 100. The invention makes it possible to ensure an exact temperature compensation of the local turn stiffness, guaranteeing a perfectly controlled geometrical development of the turn, as a function of the temperature. The invention does not require any modification or complexification of the usual manufacturing process of a silicon balance spring. claims
    A horological oscillator (100) having, between an inner ferrule (102) and an outer cleat (103), an active portion (104) spirally wound about a major axis (D), and inscribed between an upper plane (PS) and a lower plane (PI) perpendicular to said main axis (D), said active portion (104) being of substantially rectangular or trapezoidal section in any plane passing through said main axis (D), and inscribed in a height rectangle (H) parallel to said main axis (D) and of width (L) perpendicular to said main axis (D), said width (L) extending between an outer surface (1) and an inner surface (2) ), and said height (H) extending between an upper surface (3) and a lower surface (4), said spiral (100) having an internal structure (5) of silicon, and having a peripheral layer (6) of S1O2 for its thermal compensation, characterized in that, at least in said p active part (104), said peripheral layer (6) of SiO 2 comprises an outer relief (7) in the vicinity of said outer surface (1) and / or an inner relief (8) in the vicinity of said inner surface (2), and in that the geometric profile of said outer relief (7) and / or said inner relief (8) is such that, in any elementary slice delimited by two adjacent sections of said active portion (104), the ratio between on the one hand the total volume of SiO 2 of said peripheral layer (6), and secondly the total volume of silicon of said internal structure (5) in the same said elementary slice, has a value which is constant for all said active part (104) said hairspring (100).
    [2]
    2. Spiral (100) according to claim 1, characterized in that, at said outer attachment (103), which comprises an outer curve, said peripheral layer (6) of Si02 comprises an outer relief (7) in the vicinity of said outer surface (1) and / or an inner relief (8) in the vicinity of said inner surface (2), and in that the geometric profile of said outer relief (7) and / or said inner relief (8) is such that in any elementary slice delimited by two adjacent sections of said external fastener (103), the ratio between the total volume of SiC-2 of said peripheral layer (6) and the total volume of silicon on the other hand said internal structure (5) in the same said elementary slice, has a value that is the same as for all said active portion (104) of said spiral (100).
    [3]
    3. Spiral (100) according to claim 1 or 2, characterized in that said peripheral layer (6) of Si02 comprises a said outer relief (7) in the vicinity of said outer surface (1) and an inner relief (8) in the vicinity of said inner surface surface (2).
    [4]
    4. Spiral (100) according to one of claims 1 to 3, characterized in that said active portion (104) is symmetrical with respect to a median plane (PM) perpendicular to said main axis (D) and located between said upper plane (PS) and said lower plane (PI).
    [5]
    5. Spiral (100) according to one of claims 1 to 4, characterized in that said outer relief (7) and / or inner relief (8) comprises a macro-relief (20) whose profile extension in a plane perpendicular to said main axis (D) is greater than 0.100 times said width (L) of said active portion (104).
    [6]
    6. Spiral (100) according to one of claims 1 to 5, characterized in that said outer relief (7) and / or inner relief (8) comprises a micro-relief (30) whose profile extension in a plane perpendicular to said main axis (D) is less than 0.010 times the width (L) of said active portion (104).
    [7]
    7. Spiral (100) according to claim 1, characterized in that, at least in said active portion (104), said peripheral layer (6) of SiO 2 comprises an upper relief (11) in the vicinity of said upper plane (PS) or and a lower relief (12) in the vicinity of said lower plane (PI), and in that the geometric profile of said upper relief (11) and / or said lower relief (12), is such that in any elementary slice delimited by two adjacent sections of said active part (104), the ratio between, on the one hand, the total volume of SiO 2 of said peripheral layer (6), which is the total of the external volume of said outer relief (7) and of the inner volume of said relief interior (8) and the upper volume of said upper relief (11) and the lower volume of said lower relief (12), and secondly the total volume of silicon of said internal structure (5) in the same said elementary slice, a a value that is constant for all of the said active portion (104) of said hairspring (1).
    [8]
    8. Spiral (100) according to claim 7, characterized in that, at said outer attachment (103), which comprises an outer curve, said peripheral layer (6) of Si02 comprises an upper relief (11) in the vicinity of said upper plane (PS) or / and a lower relief (12) in the vicinity of said lower plane (PI), and in that the geometric profile of said upper relief (11) and / or said lower relief (12) is such that, in any elementary slice delimited by two adjacent sections of said outer fastener (103), the ratio between, on the one hand, the total volume of SiO 2 of said peripheral layer (6), which is the total of the external volume of said outer relief (7) and the interior volume of said inner relief (8) and the upper volume of said upper relief (11) and the lower volume of said lower relief (12), and on the other hand the total volume of silicon of said internal structure (5) in the even said basic slice, has a value that is the same as for all said active portion (104) of said hairspring (100).
    [9]
    9. Spiral (100) according to claim 7 or 8, characterized in that said peripheral layer (6) of Si02 comprises a said upper relief (11) in the vicinity of said upper plane (PS) and a said lower relief (12) to neighborhood of said lower plane (PI).
    [10]
    10. Spiral (100) according to one of claims 7 to 9, characterized in that said upper relief (11) and / or lower relief (12) comprises a macro-relief (20) whose profile extension according to the direction of said main axis (D) is greater than 0.100 times said height (H) of said active portion (104).
    [11]
    11. Spiral (100) according to one of claims 7 to 10, characterized in that said upper relief (11) and / or lower relief (12) comprises a micro-relief (30) whose profile extension according to the direction of said main axis (D) is less than 0.010 times said height (H) of said active portion (104).
    [12]
    12. Spiral (100) according to one of claims 1 to 11, characterized in that said width (L) of said active portion (104) is variable.
    [13]
    13. Spiral (100) according to one of claims 1 to 12, characterized in that said width (L) of said outer attachment (103) is variable.
    [14]
    14. Spiral (100) according to one of claims 1 to 13, characterized in that said height (H) of said active portion (104) is constant.
    [15]
    15. Spiral (100) according to one of claims 1 to 14, characterized in that said peripheral layer (6) of Si02 comprises a relief of constant amplitude.
    [16]
    16. Spiral (100) according to one of claims 1 to 14, characterized in that said peripheral layer (6) of Si02 comprises a relief amplitude modulation.
    [17]
    17. Spiral (100) according to one of claims 1 to 16, characterized in that said peripheral layer (6) of SiO2 comprises a periodic relief at constant period.
    [18]
    18. Spiral (100) according to one of claims 1 to 16, characterized in that said peripheral layer (6) of Si02 comprises a cyclic relief with period modulation.
    [19]
    Clock oscillator (10) comprising at least one hairspring (100) according to one of claims 1 to 18.
    [20]
    20. A watch movement (100) comprising an oscillator (10) according to claim 19.
    [21]
    21. Watch (1000) having a movement (100) according to claim 20.
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    同族专利:
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    引用文献:
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    优先权:
    申请号 | 申请日 | 专利标题
    CH01699/16A|CH713269B1|2016-12-21|2016-12-21|Thermally compensated silicon clock oscillator hairspring.|CH01699/16A| CH713269B1|2016-12-21|2016-12-21|Thermally compensated silicon clock oscillator hairspring.|
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