• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention creates a method for producing a micromechanical component with a cavity and a micromechanical component. The method comprises the steps of: forming at least one cavity (12-1, 12-2) in a substrate (10) with an opening at a surface of the substrate (10); depositing a sealing layer (18) on the surface of the substrate (10) at least until the opening of the at least one cavity (12-1, 12-2) is sealed; forming a first dielectric layer (20) on or at the closure layer (18); forming at least two vias (30-1, 30-2) to the at least one cavity (12-1, 12-2) through at least the first dielectric layer (20) and the sealing layer (18); Introducing (S06) an etching gas (33), against which the first dielectric layer (20) is etching-resistant, through the passage (30-1, 30-2) into the at least one cavity (12-1, 12-2) for etching a cavern in the substrate (10), wherein no peaks or edges protruding into the interior of the cavern are formed at transitions from walls of the cavern to a ceiling of the cavern, and wherein a depth of the cavern in the substrate is compared to a lateral extension of the cavern in the substrate has a ratio greater than one to two.
    公开号:CH712917B1
    申请号:CH01081/17
    申请日:2017-08-31
    公开日:2022-01-14
    发明作者:Weber Heribert
    申请人:Bosch Gmbh Robert；
    IPC主号:
    专利说明:

    The present invention relates to a method for producing a micromechanical component with a membrane arranged over a cavity and a micromechanical component with a membrane arranged over a cavity.
    State of the art
    [0002] In the manufacture of micromechanical sensors, for example gas sensors, structures are often required which have a cavity which is covered by a membrane but which is accessible from the outside for gases. In the case of micromechanical gas sensors, so-called micro-IIotplatcs are used, for example. Micro hotplates are designed to be able to heat paste dots, which are used for gas sensing, to a defined operating temperature with low power.
    [0003] Conventionally, such micromechanical sensors are produced by exposing the membrane on the front side of the substrate from the back side of the substrate, the substrate often being a wafer on which a large number of sensors are produced simultaneously. In this case, however, the wafers have to be placed face down on a chuck, which can lead to stress and, for example, to scratches on the subsequent membrane on the front side of the substrate.
    Alternatively, it is known that membranes can be produced by exclusively processing a substrate front side. This type of processing is called surface micromechanics (OMM). In OMM technology, for example, silicon in the area of the later membrane is etched out through etching accesses in the membrane layer system, thus creating a self-supporting membrane. As etching progresses, etching fronts originating from the respective etching access run into each other and form a cavity below the membrane area. Depending on the position and number of etching accesses, this results in a more or less irregular or rough cavity edge with local edges or peaks protruding into the cavity. Such peaks can represent stress centers on the membrane clamping, which can lead to undesired side effects.
    16a) and FIG. 16b) schematically show a micromechanical component 7 with a membrane over a cavern 1 according to the prior art. FIG. 16a) shows a schematic cross-sectional illustration perpendicular to a carrier substrate 6 through the micromechanical component 7 according to the prior art. Fig. 16b shows the same component 7 according to the prior art in a cross-sectional representation parallel to the carrier substrate 6. Through an etch stop layer 4 on the carrier substrate 6, as well as through further layers 2 arranged on the etch stop layer 4, passages 3 are made through to the carrier substrate 6 drilled. The cavity 1 in the carrier substrate is etched by an etchant introduced into the passages 3 . In this case, an etching front proceeds from each of the passages 3 and merges into one another. This creates a cavern 1 with corners and edges 5 protruding into the cavern, in particular on the lateral walls of the cavern 1.
    Disclosure of Invention
    The present invention provides a method for producing a micromechanical component having the features of patent claim 1 and a micromechanical component having the features of patent claim 9.
    [0007]Accordingly, a method for producing a micromechanical component is provided, comprising the steps of: forming at least one cavity in a substrate with an opening at a surface of the substrate; depositing a sealing layer on the surface of the substrate at least until the opening of the at least one cavity is sealed; forming a first dielectric layer on or at the closure layer; forming at least one via to the at least one cavity through at least the first dielectric layer and the closure layer; and introducing an etchant gas to which the first dielectric layer is etch resistant through the at least one via into the at least one cavity to etch a cavity in the substrate. In particular, at least one passage is formed to the cavity.
    If a first element is to be formed “on” an outside of a second element, this should be understood to mean that it is formed directly on the second element on the outside, that is, the outer surface, of the second element, as well as that it is formed indirectly over this outside. If the first element is to be formed “on” the outside of the second element, this means that it is formed directly on the outside, ie the outer surface.
    If the first element is to be arranged in a particular manner with respect to a second element, this is not intended to necessarily dictate that the second element must already be formed when the first element is formed. Rather, a final state is described here, which a person skilled in the art knows how to produce in accordance with the description.
    Furthermore, a micromechanical component is provided, with a cavity formed in a substrate, which is connected to an outside of the substrate by at least two passages, all walls of the cavity being made of the same material as the untreated substrate, and where at transitions from Walls of the cavern to a ceiling of the cavern no peaks or edges projecting into the interior of the cavern are formed. The depth of the cavity (34; 34'; 34") in the substrate (10) has a ratio of greater than one compared to a lateral extent of the cavity (34; 34'; 34") in the substrate (10). to two.
    [0011] A cavern can be characterized by walls, a ceiling and a floor. The ceiling of the cavern is the boundary of the cavern closest to, and often parallel to, the outside from which the cavern was created. The area of the component adjoining the ceiling of the cavern can therefore also be described as a membrane. A respective area in which this membrane or ceiling merges into the walls can also be described as membrane clamping.
    In addition, a micromechanical component is provided, with: a cavity formed in a substrate, which is connected to an outside of the substrate by at least two passages through a closure layer (18) deposited on the surface of the substrate (10); wherein the cavern has a shape deviating from a shape radially symmetrical with respect to the passage as the center. In other words, the cavity advantageously has a shape that cannot be produced by isotropic etching from the passage.
    Advantages of the Invention
    By forming the at least one cavity and then closing the at least one cavity by the sealing layer cavities can be generated in the substrate, which can have any shape. By appropriately designing the shape of the at least one cavity before sealing with the sealing layer, advantageous geometric shapes of the cavity can be produced, which were previously not possible with conventional methods and which are independent of a concentric etching front forming from an etching access.
    While in conventional etching processes etching fronts spread out concentrically from a respective etching starting point in the substrate and thereby generate peaks and edges at geometric locations at which the concentric etching shapes meet, by prior formation of the cavities in the substrate according to present invention, a more uniform and smoother etching front can be effected. As a result, the cavity in the micromechanical component, especially in an area where the membrane is clamped, i.e. in an area in which a membrane is attached to the rest of the micromechanical component, can be formed without edges and tips protruding inwards into the cavity. This succeeds in particular without regions made of a different material, e.g.
    A location of the etching attack on the substrate can be controlled by deliberately created cavities, so that this is not directly dependent on the position and number of etching access openings.
    A height-to-width ratio of the resulting cavity can be controlled via the depth of the cavities produced. In particular, the resulting caverns can be made much deeper than they are wide.
    In addition, it is not necessary according to the invention to form expensive etch-resistant boundaries, for example boundary walls, in the substrate in order to be able to form any cavern geometry that deviates from a cavern structure, which is characterized by a single concentrically spreading etching front or a Running into one another or meeting several concentrically spreading etching fronts is achieved.
    In contrast to cavernous structures, which are open to a substrate back, membranes that were produced using OMM technology have the advantage that they do not allow chip adhesive to penetrate and/or underfill any neighboring components the rear edge of the cavern is excluded, for example into the membrane area. This is all the more advantageous the smaller the geometric dimensions of the micromechanical components.
    [0019] Further advantages result from the dependent claims and from the description with reference to the figures.
    According to a preferred development, the at least one cavity is formed with an undercut behind the surface of the substrate. In other words, a cross section, parallel to the surface of the substrate, of the at least one cavity at a smaller distance from the surface of the substrate can be smaller than a parallel cross section through the at least one cavity at a greater distance from the surface of the substrate. For example, the at least one cavity having a cross section perpendicular to the surface of the substrate may be formed in a bottle shape, a triangular shape, or the like. Thus, cavities can be created which enable deep and/or wide etching of the cavern and at the same time can be closed relatively quickly by depositing the sealing layer and with a small amount of deposited material.
    [0021] According to a further preferred development, a heating structure and an electrode structure are formed in the area of the cavity, the heating structure being insulated from the electrode structure by a dielectric layer. In particular, the heating structure and the electrode structure are formed above the cavity, i.e. in or on the membrane.
    According to a further preferred development, a paste dot is formed on a side of the electrode structure which faces away from the cavity. The micromechanical component can thus function as a gas sensor, for example with a micro hotplate. The paste dot can be formed or arranged before or after the introduction of the etching gas for etching the cavity.
    According to a further preferred development, the at least one cavity is formed in a circular or other ring structure. In this way, the self-supporting membrane can be formed later with little effort in the area enclosed by the ring structure. In particular, a heating structure and/or a paste dot can be arranged in the area surrounded by the ring structure, as described above. The at least one cavity can also have a star-shaped structure or a meander-shaped structure. A lateral area surrounding the at least one cavity can thus be etched particularly quickly.
    [0024] According to a further preferred development, the at least one cavity is formed by means of a trench method. The at least one cavity can thus be formed particularly precisely and with a desired shape.
    [0025] According to a further preferred development, the first dielectric layer deposited on the substrate and the closed cavity has silicon dioxide or consists of silicon dioxide. Xenon difluoride, XeF2, can be used as etching gas. Alternatively or additionally, chlorine trifluoride, ClF3, can also be used as the etching gas.
    According to a further preferred development, a depth of the cavern in the substrate compared to a lateral extension of the cavern in the substrate has a ratio of greater than 1:2, preferably greater than 1.2:2, particularly preferably of greater than 1.5:2, especially greater than 2:2. In other words, the depth of a cavity can be made greater than half its lateral dimensions. In contrast, with conventional methods in which the substrate is etched isotropically, starting from etching accesses in the layer system located above, it is only possible to produce caverns whose respective lateral dimensions are twice as large as their respective depth. In the case of the cavity of the micromechanical component produced according to the invention, however, a higher ratio of vertical to lateral expansion of the cavity can be achieved via the depth of the introduced cavities, as a result of which the component can be used in a more versatile manner for a large number of possible applications. The depth of the cavern means how far the cavern extends from its ceiling into the substrate. The depth of the cavern can in particular be the same as the height of the walls of the cavern.
    Brief description of the drawings
    The present invention is explained in more detail below with reference to the exemplary embodiments illustrated in the schematic figures of the drawings. 1 to 7 show schematic cross-sectional views for explaining a method for producing a micromechanical component according to one embodiment and a micromechanical component according to a further embodiment; 8a) to 15 schematic representations for explaining advantageous variants according to further embodiments; and FIGS. 16a) and 16b) schematically show a micromechanical component with a membrane over a cavity according to the prior art.
    In all figures, elements and devices that are the same or have the same function—unless otherwise stated—are provided with the same reference symbols. The numbering of method steps is for the sake of clarity and, unless otherwise stated, is not intended to imply a specific chronological order. In particular, several method steps can also be carried out simultaneously.
    Description of the exemplary embodiments
    A manufacturing method according to a first embodiment of the present invention will be described below with reference to Figs. 1 to 7 each show schematic cross-sectional views through a micromechanical component 100 or the micromechanical component 100 being produced, the illustrations not necessarily being true to scale. It should be understood that the manufacturing method shown can also be carried out on a large scale on a wafer as the substrate, so that not only a single micromechanical component 100 on the wafer, but a large number, for example a thousand or more, micromechanical components 100 of the same design at the same time can be fabricated on the wafer, with the wafer acting as a substrate for each of the devices 100 .
    Fig. 1 illustrates, as in a step S01, in a substrate 10 on a surface 10-s of the substrate 10 at least one cavity 12-1, 12-2 with a respective opening 14-1, 14-2 on the surface 10-s of the substrate 10 are formed. The substrate 10 is advantageously a silicon substrate. The component 100 can thus advantageously be produced in large numbers at the same time on a silicon wafer as the substrate 10 .
    In Fig. 1, two cavities 12-1, 12-2 are shown as an example, which are collectively referred to below as 12-i. Depending on the desired final shape of the cavity in the micromechanical component 100, only one cavity 12-i or a multiplicity of cavities 12-i, in particular three or more cavities, can also be formed. The cavities 12-i in FIG. 1 can also be formed in such a way that they are connected to one another within the substrate 10, so that actually a single cavity is formed which closes in a ring shape behind and/or in front of the plane of the paper in FIG.
    Where reference is made here and below to individual elements of the at least one cavity 12-i, these are sometimes also collectively referred to with the index “i”. For example, ports 14-1, 14-2 may be collectively referred to as 14-i.
    2 illustrates how a sealing layer 18 is deposited on the surface 10s of the substrate 10 in a method step S02, at least until the respective openings 14-i of the at least one cavity 12-i are closed. In the case shown in FIG. 2, the sealing layer 18 is thus deposited until the first opening 14-1 of the first cavity 12-1 and the second opening 14-2 of the second cavity 12-2 are both sealed. The sealing layer 18 can advantageously consist of the same material or have the same material as the substrate 10 consists of.
    If the substrate 10 is a silicon substrate, for example, silicon can be deposited as a sealing layer 18 on the surface 10 -s of the substrate 10 . Epitaxial deposition of silicon (epi-silicon) is advantageous. If the silicon is grown in monocrystalline form, this has the advantage that electrical components can be integrated in later process steps. After the deposition, the surface of the sealing layer 18 facing away from the substrate 10 can optionally be planarized. The planarization can be carried out, for example, by a chemical-mechanical planarization (CMP for “chemical mechanical polishing” or “chemical mechanical planarization”) or by a plasma planarization step.
    The thickness of the deposited closure layer 18 and the removal of the closure layer 18 by the planarization are advantageously chosen such that it does not happen at any point to reopen one of the openings 14-i of the closed cavities 12-i.
    Alternatively, the at least one cavity 12-i can be deposited by means of silicon deposited in a chemical vapor deposition (CVD) process, in particular in a low-pressure CVD (LPCVD). be locked. This creates a polycrystalline sealing layer 18, which can be structured or removed in a subsequent step (e.g. by means of CMP) in order to expose the preferably monocrystalline substrate 10.
    Compared to the use of LPCVD silicon, the epitaxial deposition of silicon has the advantage that the epitaxially deposited silicon is grown in monocrystalline form, as a result of which the sealing layer 18 can be further processed more easily. In addition, the epitaxial deposition has a significantly higher deposition rate, which has advantages when closing the openings 14-i and also makes it possible to produce thick layers in a short time.
    The epitaxial deposition of the sealing layer 18 also has the advantage that, particularly when silicon is deposited, monocrystalline silicon layers are present, which makes it easier to provide electrical circuit components on the micromechanical component 100, for example to implement an integrated gas sensor. In this way it can become possible to carry out gas sensing, evaluation and processing of the evaluated measurement signals on a single chip, namely the micromechanical component 100 .
    3 illustrates how a first dielectric layer 20 is formed on the sealing layer 18, in particular directly on the sealing layer 18, in a step S03. The first dielectric layer 20 is advantageously resistant to etching with respect to the etching gas used later. If, for example, the etching gas is xenon difluoride, XeF2, or the etching gas chlorine trifluoride, ClF3, the dielectric layer 20 can advantageously be silicon dioxide, SiO2. Forming the first dielectric layer 20 directly on the sealing layer 18 has the advantage that the first dielectric layer 20 blocks the etching process in a layer system optionally located above this during the subsequent etching of the cavern starting from the sealed cavities 12 - i. In this case, the dielectric layer 20 can be produced using methods such as thermal oxidation or CVD-PECVD or LPCVD deposition
    In an optional step S04, further layers 21 can advantageously be formed on, in particular directly on, the first dielectric layer 20, in particular on a side of the first dielectric layer 20 facing away from the sealing layer 18. In particular, different structured metallic layers, for example conductor track layers 22, 24, a heating structure 26 and/or an electrode structure 28 can be formed as part of the further layers 21. Furthermore, when selecting the further layers 21, layers with different layer stress and/or different heat conduction (e.g. LPCVD-Si3N4, PECVD-SiO2, PECVD-Si3N4etc.) can be used in order to be able to adjust the stress and the thermal conductivity of the membrane The electrode structure 28 can be arranged in particular directly above the heating structure 26, spaced apart by a dielectric layer.
    A photoresist layer 32 can advantageously be formed on the further layers 21 during the processing in order to be able to produce passages 30-i to the cavities 12-i, as shown in FIGS. 4 and 5.
    4 schematically explains a step S05, in which a passage 30-i through the further layers 21, but at least through the first dielectric layer 20, is formed for each of the cavities 12-i. If part of the sealing layer 18 is still present, the passages 30 - i can also be formed through the sealing layer 18 . The passages 30-i run in particular from the respective cavity 12-i to an outside of the entire current substrate structure, ie in the exemplary embodiment described here the passages 30-i run successively through the sealing layer 18, the first dielectric layer 20 and the further layers 21 and the photoresist layer 32.Photoresist layer 32 may be formed and/or used as a photoresist mask. The vias 30-i can be formed via the photoresist layer 32 by standard etching processes such as plasma etching and/or trenching.
    5 schematically shows a step S06, in which an etching gas 33 is introduced through the respective passage 30-i into the respective cavity 12-i in order to etch the substrate 10 starting from the cavities 12-i. As already explained, it is particularly advantageous if the first dielectric layer 20 is etch-resistant to the etching gas 33 . For example, the etching gas can be xenon difluoride, XeF2, or chlorine trifluoride, ClF3, and the first dielectric layer 20 can be silicon dioxide, SiO2, and here advantageously a silicon oxide produced by means of thermal oxidation.
    FIG. 6 illustrates how the etching gas 33 can advantageously spread after being introduced into the respective cavity 12-i. Starting from each of the cavities 12-i, a respective sub-cavern 34-i is formed, which can advantageously merge into one another and thus together can also form a single cavity 34.
    FIG. 7 illustrates further possible method steps after spreading of the etching gas 33 and furthermore shows the finished component 100 in a schematic cross-sectional view.
    After the cavity 34 has been formed, the photoresist layer 32 can be completely or partially removed again in a step S07 in order to release the further layers 21 .
    In a step S08, a paste dot 36 can also be formed on, in particular on, the electrode structure 28 and preferably also on, i.e. over, the heating structure 26. The paste dot 36 can thus be heated by the heating structure 26 and contacted by the electrode structure 28 for electrical evaluation.
    [0048] The micromechanical component 100 which is thus completely formed can therefore be used, for example, as a gas sensor or as part of a gas sensor.
    It is explained below with reference to FIGS. 8a) to 13b) how an etching attack on the substrate 10 can be controlled by cavities that are created in a targeted manner and with special geometric shapes, so that this is advantageously not directly and exclusively dependent on the position and number of etch access openings, ie vias 30-i. In particular, a height-to-width ratio of the resulting cavity can be controlled via the depth of the cavities produced.
    Fig. 8a) and b) and Fig. 9a) and b) show schematic representations, which is used to explain how a desired cavern structure of a cavern 34 'is achieved by an advantageous configuration of cavities in the substrate 10 and peaks and edges on the membrane clamping can be avoided.
    Fig. 8a) and b) explain the case that as the at least one cavity, a cavity 112 was formed in the substrate 10, which is exemplified by four passages 30-1, 30-2, 30-3, 30-4 connected to the outside of the current part structure.
    Figure 8a) shows a schematic cross-sectional representation perpendicular to the surface 10-s of the substrate 10, through the device structure with the cavity 112 along the line AA' after the formation of the photoresist layer 32, but before the introduction of the etching gas 33 into the cavity 112
    Figure 8b) shows a schematic sectional view along line AA' in Figure 8a). The view according to FIG. 8b) is thus rotated by 90° in relation to the view according to FIG. The shape of cavity 112 is shown in phantom. In the variant according to FIGS. 8a) and b), the cavity 112 is designed as a rectangular, in particular square, ring structure.
    Fig. 9a) shows the same view as Fig. 8a), but after the completion of the etching process for etching the cavern 34 'by means of the etching gas 33. Fig. 9b) shows the same view as Fig. 8b), also after completion of the etching process. As can be seen from Fig. 9b), the specific shape of the cavity 112 results in a substantially rectangular, in particular square, cross-sectional structure of the cavern 34' in the substrate 10.
    Fig. 10a) and b) and Fig. 11a) and b) show schematic representations which are used to explain how a desired cavern structure of a cavern 34" is achieved by an advantageous configuration of cavities in the substrate 10 and peaks and edges on the membrane clamping can be avoided.
    FIG. 10a) shows the same view as FIG. 8a, and FIG. 10b) the same view as FIG. The cavity 212 is formed with an elliptical, in particular circular ring structure.
    11a) shows the same view as FIG. 10a, and FIG. 11b) the same view as FIG. 10b), in each case after the end of the etching process for etching the cavern 34". the specific shape of cavity 212 results in a substantially elliptical, in particular circular, cross-sectional structure of cavity 34" in substrate 10.
    Fig. 12a) and b) and Fig. 13a) and b) show schematic representations, on the basis of which it is explained how a desired cavern structure of a cavern 34′″ is achieved by an advantageous configuration of cavities in the substrate 10 and Points and edges on the membrane clamping can be avoided.
    Fig. 12a) shows the same view as Fig. 10a, and Fig. 13b) the same view as Fig. 10b), a cavity 212' being formed in each case instead of the cavity 212 as a variant in the component structure. The cavity 212', like the cavity 212, has an elliptical, in particular circular ring structure. In addition, the cavity 212' within this ring structure has further cavity structures, in particular, as shown in FIG. 12b) by way of example, cavity structures arranged in a cross shape and symmetrically within the ring structure.
    [0060] Using the cavity 212', a region within the ring structure can be etched particularly quickly. As a result, the cavern 34'" can be formed with particularly small lateral dimensions in comparison to a depth of the cavern 34'".
    13a) shows the same view as FIG. 12a, and FIG. 13b) the same view as FIG. 12b), in each case after the end of the etching process for etching the cavern 34'''. As can be seen from FIG. 13b). , the specific shape of the cavity 212' results in a substantially elliptical, in particular circular, cross-sectional structure of the cavern 34''' in the substrate 10.
    14 shows a schematic cross-sectional view of a micromechanical component according to the invention that is being produced according to a variant of the production method according to the invention in a state that corresponds to the state in FIG. 2, ie after step S02. In the variant shown in Fig. 14, instead of the cavities 12-1, 12-2 in Fig. 2, cavities 312-1, 312-2 are formed, which have a negative flank shape, i.e. in a plane parallel to the surface 10 -s of the substrate 10 have a smaller cross-section closer to the surface 10-s than in each cross-sectional plane which is parallel to the surface 10-s and which is farther from the surface 10-s.
    In a cross-sectional plane perpendicular to the surface 10-s, the cavities 312-1, 312-2, as shown in FIG. 14, can have a triangular cross-section, for example. The cavities 312-1, 312-2 shown in FIG. 14 can represent either two separate cavities 312-1, 312-2 or two areas of one and the same, closed in a ring behind and/or in front of the plane of the paper in FIG single cavity 312-1, 312-2.
    In this variant, too, the openings of the cavities 312-1, 312-2 or of a cavity 312-1, 312-2 on the surface 10-s of the substrate 10 have the smallest dimensions, so that during the deposition S02 of the sealing layer 18 the cavities 312-1, 312-2 are sealed before the cavities 312-1, 312-2 are filled.
    15 shows a schematic cross-sectional view of a micromechanical component according to the invention that is being produced according to a variant of the production method according to the invention in a state that corresponds to the state in FIG. 2, ie after step S02.In the variant according to FIG. 15, instead of cavities 12-1, 12-2 as in FIG exhibit. In this case, during the deposition S02 of the closure layer 18, the deposition process, for example the epi-silicon deposition process, can be run in such a way that the growing silicon at the edges of the openings of the cavities 412-1, 412-2 has a high lateral growth rate. that is, a high growth rate in directions parallel to the surface 10-s of the substrate 10.
    In other words, the epi-silicon deposition process is targeted in such a way that uniform deposition does not take place throughout the cavities 412-1, 412-2. In this way, the cavities 412-1, 412-2 near the surface 10-s of the substrate 10 can be sealed before the cavities 412-1, 412-2 themselves are completely filled with silicon. It is thus possible via the shape and depth of the cavities 412-1, 412-2 to determine the flank geometry, ie the geometric structure of the walls of the cavern 34; 34'; 34" in the desired manner. An episilicon deposition process carried out in this way can also be used with the other shapes of the cavities 12; 112; 212; 312-1, 312-2 described above for better sealing of the cavities 12; 112; 212; 312-1; 312-2 can be used.
    It goes without saying that in all the variants shown in Figures 9 to 13, the steps preceding and/or following the state shown can each be carried out as described in relation to Figures 1 to 8 and also with the the variants and developments described in relation to FIGS. 1 to 8 can be modified.
    权利要求:
    Claims (9)
    [1]
    1. A method for producing a micromechanical component (100) with a cavity (34; 34'; 34"), with the steps:Forming (S01) at least one cavity (12-i; 112; 212; 312-i; 412-i) in a substrate (10) with an opening (14-i) on a surface (10-s) of the substrate (10 );depositing (S02) a sealing layer (18) on the surface (10-s) of the substrate (10) at least until the opening (14-i) of the at least one cavity (12-i) is closed;Forming (S03) a first dielectric layer (20) on or at the sealing layer (18);forming (S05) at least two passages (30-i) to the at least one cavity (12-i) through at least the first dielectric layer (20) and the sealing layer (18);Introducing (S06) an etching gas (33), against which the first dielectric layer (20) is etching-resistant, through the at least one passage (30-i) into the at least one cavity (12-i) for etching a cavern (34; 34 '; 34") in the substrate (10),wherein at transitions from walls of the cavern (34; 34'; 34") to a ceiling of the cavern (34; 34'; 34") there are no tips (5) or Edges are formed and wherein a depth of the cavern (34; 34'; 34") in the substrate (10) compared to a lateral extent of the cavern (34; 34'; 34") in the substrate (10) has a ratio of greater than one in two.
    [2]
    2. The method of claim 1, whereinthe at least one cavity (12-i; 112; 212; 312-i) is formed with an undercut behind the surface (10-s) of the substrate (10).
    [3]
    3. The method according to claim 1 or 2,wherein the sealing layer (18) has the same material as the substrate (10) or consists of the same material as the substrate (10).
    [4]
    4. The method according to any one of claims 1 to 3,wherein the closure layer (18) is deposited epitaxially on the substrate (10).
    [5]
    5. The method according to any one of claims 1 to 4,further layers (21) being formed on the dielectric layer (20), a heating structure (26) and an electrode structure (28) being formed as part of these further layers (21), which are separated from one another by a dielectric layer.
    [6]
    6. The method according to claim 5,a paste dot (36) being formed on a side of the electrode structure (28) facing away from the cavity (34; 34'; 34").
    [7]
    7. The method according to any one of claims 1 to 6,wherein the at least one cavity (112; 212) is formed in a circular or other ring structure, in a star-shaped structure and/or in a meandering structure.
    [8]
    8. The method according to any one of claims 1 to 7,wherein the at least one cavity (12-i; 112; 212; 312-i; 412-i) is formed by means of a trench process.
    [9]
    9. Micromechanical component (100), produced by a method according to any one of claims 1 to 8, with:a cavity (34; 34'; 34") formed in a substrate (10), which is formed by at least two passages (30-i) through a closure layer (18) deposited on the surface (10-s) of the substrate (10). connected to an outside of the substrate (10);wherein a first dielectric layer (20) is formed on or at the sealing layer (18); andwherein all walls of the cavity (34; 34'; 34'') consist of the same material as the untreated substrate (10); andwherein at transitions from walls of the cavern (34; 34'; 34") to a ceiling of the cavern (34; 34'; 34") there are no tips (5) or edges are formed,wherein a depth of the cavity (34; 34'; 34") in the substrate (10) compared to a lateral extent of the cavity (34; 34'; 34") in the substrate (10) has a ratio of greater than one has two.
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    同族专利:
    公开号 | 公开日
    AT519160B1|2020-07-15|
    AT519160A3|2020-02-15|
    DE102016217123B4|2019-04-18|
    CH712917A2|2018-03-15|
    AT519160A2|2018-04-15|
    DE102016217123A1|2018-03-08|
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    DE102016217123.2A|DE102016217123B4|2016-09-08|2016-09-08|Method for producing a micromechanical component and micromechanical component|
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