• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention provides a method of anodic connection between two elements with an intermediate layer (23), in particular, but not exclusively, the two elements being a metallic element and a heterogeneous element, such as for example a glass, a synthetic sapphire, or a ceramic. The specificity and purpose of the present invention is to produce a gas-tight, fluid-free, solder-free, solder-free, and organic-free (glue) seal. Among its many industrial applications, the present method makes it possible to fix a watch glass (10) that can be typically made of mineral glass, sapphire or other transparent or translucent ceramics, to a bezel (20) or middle-bezel of a watch case by the technique of anodic assembly. The invention also relates to a timepiece component, a leather product, a decorative article, a jewel, glasses or a writing instrument, comprising an element assembled by the assembly method above.
    公开号:CH711295A1
    申请号:CH00977/15
    申请日:2015-07-06
    公开日:2017-01-13
    发明作者:Brun Sébastien
    申请人:Cartier Int Ag；
    IPC主号:
    专利说明:

    Technical area
    The present invention relates to an anodic assembly process between two elements with an intermediate layer, in particular, but not exclusively, the present invention relates to an anode assembly process between a metal element and a heterogeneous element, such as by for example a glass, a synthetic crystal, such as for example a sapphire, or a ceramic.
    The specificity and purpose of the present invention is to produce a gastight and liquid-tight seamless assembly, without solder and without organic compound (glue).
    Among its many industrial applications, the present method makes it possible to fix a watch crystal that can be typically made of mineral glass, sapphire or other transparent or translucent ceramics, to a bezel or middle-bezel of a watch case by the technique anodic bonding. The area of the watch case on which the ice is attached is typically stainless steel, platinum, gold, titanium or any of the alloys associated with these materials. The aforementioned materials may be indifferently coated with rhodium or any other material used for the manufacture of watch cases or jewelry or jewelery products. The ice may be wholly or partly coated with an antireflection layer without interfering with the assembly process.
    The present invention also allows the fixing of background ice. It is also possible, by the method of the invention, to attach driving elements to a transparent blade, thus producing an invisible gear, or a mysterious watch.
    State of the art
    The anodic bonding process is used in the general field of microtechnology, more particularly in the biomedical, aerospace and electronics sectors. In these fields, particularly in microelectronics and neighboring fields, the anode assemblies are mainly used for films and thin and flat layers such as wafers of metal, glass and silicon. Since the process requires relatively high temperatures, it is generally used to assemble materials with close thermal expansion coefficients, in order to limit the constraints related to contraction differences.
    In the known art, the anode assembly is mainly reserved for joining glass, especially Pyrex® or borofloat® glass (borosilicate glasses).
    By the same principle of stress limitation, anodic assemblies of small sizes and low mass or elements not subject to external mechanical forces, have been described in the watch industry in JP 08 166 469 A, for fix a glass plate on a metal dial or silicon. JP 05 080 163 A also describes the fixing of silicon indexes affixed to a glass plate of the dial by the anode assembly. The known methods, however, do not allow the assembly of massive components, subjected to high mechanical stresses, and having to withstand shocks, especially when the parts to be joined are made with heterogeneous materials, with dissimilar expansion coefficients, such as this is the case for stainless steel and sapphire used to make watch ice creams.
    Brief summary of the invention
    An object of the present invention is to provide an assembly method free from the limitations of known anode assembly processes, in particular a method for obtaining stronger and more sealed bonds. Advantageously, the process is carried out at low temperature, well below the transition or melting temperatures of the materials used.
    Another object of the present invention is to provide an anode assembly method that allows the union of heterogeneous materials, without being limited to borosilicate glasses. The assembly described makes it possible to produce metal-to-metal, metal-to-metal and non-metal to non-metal bonds.
    It can for example assemble stainless steel elements, titanium, gold, platinum or any other metal, elements of ordinary glass, mineral glass, quartz, synthetic sapphire (AI2O3), silicon, or transparent or translucent ceramic based compositions of alumina, yttria, spinel, or other monocrystalline, polycrystalline, or amorphous compositions. The low temperatures involved in the process of the invention also allow its application to assemblies comprising elements made of synthetic and / or composite material.
    According to the invention, these objects are achieved in particular by means of the subject matter of claim 1.
    Unlike conventional embodiments, the assembly proposed by the present invention allows the binding of a large number of materials through intermediate layers, this in order to consolidate the link, increase the speed of diffusion and enable assembly for a wider range of materials and more massive parts, subject to high stresses and to withstand shocks.
    Preferably, the intermediate layer is an insulating or semiconductive layer. It may be an insert (for example a thin glass slide) or, preferably, a layer deposited by a physical or chemical deposition process (PVD, PE-CVD, Sol-gel, electroplating). Alternatively, the intermediate layer may be a natural or forced passivation layer, for example an oxide layer on a metal element of steel or titanium.
    The elements of the assembly are brought into intimate contact at the atomic level by an electric field of sufficient intensity. It is believed, without wishing to be bound by the theory, that the application of an electric field allows the migration of atoms and ions into and from the intermediate layer, as well as the creation of chemical gradients and charge, thus giving rise to covalent and / or ionic bonds between the elements of the assembly. Importantly, the electric field has a variable component, pulsed or alternating, and a continuous component. Preferably, the characteristic frequencies of the pulsed or alternating variable component are substantially above the dielectric relaxation frequency of the materials used and are between 0.1 and 100 kHz.
    The stability and the strength of the anode link can be improved considerably by functionalizing the surfaces before the application of the electric field by plasma bombardment, in particular by oxygen-rich plasmas.
    Although the present description has presented examples related to the manufacture of watches, the present invention also admits other applications to watchmaking, and also to jewelery, leather goods, eyewear, and clothing. production of writing instruments. The invention is also not limited to the production of decorative elements, but also allows the assembly of composite technical elements for watch movements, optical instruments, medical devices, and a wide variety of applications. articles and products that use glass or ceramics.
    Brief description of the figures
    Examples of implementation of the invention are indicated in the description illustrated by the appended figures in which:<tb> Figs. 1a and lb <SEP> schematically illustrate two assembly devices for implementing the method of the invention.<tb> Fig. 2 <SEP> illustrates steps of the inventive method.<tb> Figs. 3a and 3b <SEP> show selective masking methods.<tb> Fig. 4 <SEP> shows schematically and in a simplified way the section of an assembly produced by the process of the invention and the concentration profiles of certain chemical elements.
    Example (s) of embodiment of the invention
    In one embodiment which will be described in detail later, the method of the invention is applied to the attachment of a watch crystal on a box or on a watch bezel. It should be understood, however, that the invention can also be applied to the assembly of any other object or component. The description will be better understood with reference to FIG. 1a which represents, in section, an assembly as described in an anode assembly device.
    We choose a piece of a watch case to receive the ice, for example the bezel or the middle part; this piece 20 can be made with all the materials normally used for making watches. For example:• stainless steel,• gold, or gold-based alloys,• platinum,• titanium,• ceramic,This list is not exhaustive.
    The part intended to receive the ice can be made by any known method, for example by machining, stamping, rolling, 3D printing, or any other method. It is important that the face in contact with the ice is perfectly flat and free of asperities at the microscopic scale, to allow intimate contact. Depending on the needs and the nature of the materials used, this can be obtained by mechanical and / or electrochemical polishing, for example.
    The ice 10 is made of a suitable transparent material, for example:<tb> • <SEP> Synthetic Sapphire (AI2O3),<tb> • <SEP> Mineral glass,<tb> • <SEP> Quartz (Si02),<tb> • <SEP> Transparent ceramic, for example:<tb> <SEP> - <SEP> comprising yttrium oxides (Yttralox®) or Yttria / Magnesia binary compounds,<tb> <SEP> - <SEP> based on Aluminum Oxynitride Spinels (Alon®) or Magnesium Oxides and Aluminum,<tb> <SEP> - <SEP> other optical ceramics.
    The contact surface of the ice is chemically or mechanically polished to perfectly fit the corresponding surface of the bezel and / or the ice screen.
    Then develops an intermediate layer 23 on the contact surface of the bezel 20, and / or ice 10. Preferably it is a thin layer deposited by a physical or chemical deposition process (PVD, PE -CVD, Sol-gel, electroplating). Very satisfactory results have been obtained by metal layers deposited by a PVD process, for example oxidized titanium layers, or by natural oxidation layers functionalized by oxygen-rich plasma.
    It has been found that the process of the invention does not require a homogeneous chemical composition of the intermediate layer 23. On the contrary, layers having a chemical gradient and / or oxidation have provided superior results in terms of adhesion, strength of the connection and speed of assembly. According to one example, the intermediate layer 23 has a thickness between 1 nm and 10 microns and its composition varies from pure titanium, in the deeper regions, to oxide TIO2 on the surface, passing through all the intermediate stoichiometry. As will be seen later, it is advantageous to accentuate this chemical gradient with exposures to a reactive plasma.
    Several materials lend themselves to the deposition of the intermediate layer 23. Titanium layers, as they say, have given excellent results, but the invention can be replicated with other materials, for example Zr, Hf, Fe, Si, Al, Cr, Ni, invar among others. The chemical gradient can be obtained by oxidation, nitriding, carburation, for example, so that the composition of the layer can be of TixOy, SixOy, SixNy, or AlxOy type. The intermediate layer may be enriched by mobile atoms / ions such as Li, Na, K, Ca, Be, or halogens.
    When the substrate is metallic, as is the case of a stainless steel bezel 20, the intermediate layer 23 may be a natural oxide layer, developing spontaneously following exposure to air, or forced, by exposure to an atmosphere or a reactive plasma.
    The intermediate layer 23 may be obtained, in variants of the invention, by a physical deposition process in a reactive atmosphere of variable composition. For example, a layer can be deposited by sputtering, in an inert atmosphere, in a first phase, and with a progressively increasing concentration of reactive gas (typically oxygen) afterwards. In this variant, the layer 23 is activated by exposure to a plasma chemically at the same time as it is deposited. By this method it is possible to obtain layers having the desired chemical gradient.
    In possible variants, the intermediate layer may be an insert, for example a thin glass slide.
    Figure 1a shows very schematically an assembly device for performing the inventive method. The ice 10 is positioned on the upper face of the bezel 20 in an enclosure 40. Heating means 45 maintain the parts at a desired temperature. Typically, the invention proceeds at lower temperatures than conventional anode assembly methods. The temperature is preferably less than 250 ° C. Very satisfactory results have been obtained at temperatures of 200 ° C, 150 ° C, 100 ° C, and even 75 ° C. In no case will the temperature be close to that of melting or glass transition of the materials used.
    The ice is connected to an electrode 31 and the telescope is connected to a counter-electrode 32, to which a voltage source 30 is connected. The voltage source produces an electric field which generates an ion migration between the part 20, layer 23 and part 10.
    Preferably, the voltage generated by the source 30 comprises a DC component (its average value or DC offset voltage) within the limits of what is generally used in anode assembly processes, ie in the range 0.1- 15 kV, depending on the thickness of the parts to be joined and the dielectric strength of the assembly. According to the invention, it has been found that the quality of the assembly improves considerably when an AC or pulsed component is superimposed on the DC component. The amplitude of the AC component or the height of the pulses is preferably comparable to that of the DC component, and the characteristic frequency will be greater than 100 Hz, for example 1 kHz, 10 kHz, or more. Characteristically, the characteristic frequency of the AC component or pulses is also preferably greater than the dielectric relaxation frequencies of the materials used.
    If required, the parts 20, 10 can be compressed mechanically. However, it has been found that if the contact surfaces are meticulously polished and clean, such plating is often superfluous. The assembly speeds are of the order of a few mm <2> / minutes.
    Between the intermediate layer 23 and the substrate 20 can be deposited thin layers with an aesthetic or physical function such as anti-reflective functions (if the substrate 20 is transparent, for example), or to improve the adhesion, or for any other purpose. These additional layers are not shown in the figures. The transition between the materials of the layers can be discontinuous or gradual.
    The method of the invention is not limited to the assembly of two elements. Fig. 1b schematically illustrates an assembly with an intermediate substrate 15 between the first element 10 and the second element 20. Intermediate layers 13, 23 are present at each interface. The number of superimposed elements can be increased at will.
    Any charged particle placed under the influence of a uniform electric field moves at a speed proportional to this field, the proportionality factor being called the electric mobility of the particle. This migration will take place from the anode to the cathode for the positively charged particles, in the opposite direction for the negatively charged particles. Under the effect of the ion migration, a potential difference is observed between the parts 10, 20, which causes a plating between the induced partners under the effect of electrostatic forces. Disturbance of the thermodynamic equilibrium influences the populations of charge carriers located in the parts to be assembled and the intermediate layer. The origins of the disturbances can be:the inhomogeneities of doping, impurities, structural defects and local deformations (mainly near the surface), contacts and junctionselectric field strengthstemperature gradients.The frequency applied to the electric field
    When the electric field and the temperature are interrupted, the charge carriers tend towards a state of equilibrium corresponding to permanent regimes defined by initial conditions and at the edges, according to typical mechanisms:carrier diffusion in concentration gradientsthe displacement of the carriers in electric fieldsinternalthe generation and recombination of carriers that may be intrinsic or involve recombination centers and traps.
    The properties relating to electric currents and to charge carrier displacements under the influence of applied forces are called transport phenomena. Among the transport phenomena, mobility, whether it be for example gaps, impurities, charge carriers (the materials are differentiated by the Debye length of the majority carriers and their behavior is described in particular by the continuity equation ) as well as diffusion (based on Fick's laws) are the key mechanisms of anodic assembly.
    The parameters that most influence the mobility of the charge carriers are the temperature and the volume number of impurities. Among the defects we can distinguish impurities and gaps. These are the same shortcomings, Schottky or Frenkel defects, among others, which facilitate the diffusion of charge carriers and which define the energy necessary for their diffusion. In addition, moving a gap through a crystal requires much less work than constraining a union to move through a dense ion network of a crystal. Ion conduction depends on the movement of the gaps. The impurities that contribute to the charge carrier density are called "donors" if they bring additional electrons and "acceptors" if they bring additional holes. It should be noted that the speed of the phenomenon of the anode assembly depends on the quantity of defects and the temperature in particular.
    The choice of the intermediate layer or layers strongly depends on the "properties" of the charge carriers. The chemical composition of the layer or layers is naturally important since the transport phenomena depend on the characteristics of the atomic bonds. The bonds created during the anodic assembly process are predominantly covalent bonds. These strong links are established by pooling a pair of electrons from each of the charge carriers.
    Other parameters have their importance such as the thickness of the parts to be assembled and the thickness of the depletion zone. Thickness limitations are based on glasses and ice tolerances and range from 1-1000 nm.
    FIG. 2 schematically represents a step sequence of the inventive method. The machined and polished piece 20 is first cleaned (step a) by leaching baths, or by ultrasound, or by any suitable washing method. Then (step b) a PVD deposition assembly intermediate layer 55 is created, as discussed above, or by any other suitable method. Step c) represents the element 20 with the activated intermediate layer 23 (the element 10 with another intermediate layer 13 are not shown in step c) of the figure).
    The surface or surfaces to be joined are preferably activated by reactive plasma bombardment 60 (step d). The chemical and physical characteristics of the plasma will be chosen according to the desired chemistry for the intermediate layer. For example, oxygen plasmas applied to titanium or steel layers have given very satisfactory assemblies in terms of fastness and fastness. The activation takes place, if possible, in the same reactor in which the deposition 55 is carried out.
    The activated surfaces are sensitive to air, for this reason it is preferable to complete the assembly quickly after step d). The elements 10 and 20 are brought into contact and heated (step e), then the electric field is applied by the electrodes 31, 32 (step f) for a predetermined time, until the anode connection.
    It is often necessary to apply the intermediate layers 23, 13 selectively without fully covering the surface of the parts to be joined. It would not be possible to apply a layer of Ti / TiO2 over the entire surface of a watch ice, for example, because these materials are not transparent. Selective assemblies are required by many other applications.
    FIG. 3a illustrates a possibility of obtaining such an assembly. Part 20 is initially partially covered by a perforated protective coating 70 which partially covers the surface, leaving exposed only the regions to be joined. The protective coating or mask 70 can be made by the application of photosensitive resins, or by any other suitable method.
    In the next step, a thin layer 84 is deposited on the entire part. Preferably, layer 84 also has the function of an anodic bonding interlayer. It can be homogeneous or comprise several stacked layers of heterogeneous chemical composition. The dissolution or the chemical etching of the mask 70 leaves on the surface of the regions in the groove 90 which will serve as inking assembly.
    The element 10 is superimposed, and the assembly is performed by applying an electric field and heat, as explained above. Preferably the electric field has a DC component and an alternating or pulsed component.
    FIG. 3b illustrates a variant of the method of the invention in which the selection of the regions to be treated is carried out by a method of selective etching of the substrate. Initially, the element 20 is masked by a protective coating 70 which covers only the regions to be joined. The unprotected regions undergo a selective attack, for example by a corrosive chemical bath, a plasma, an ion bombardment, a laser beam, or any other suitable means, leaving the regions 90 intact.
    The connection is completed by the superposition of the part 10 and the application of a controlled temperature electric voltage, as in the previous examples. Preferably the electric field has a DC component and an alternating or pulsed component.
    In the example shown, the intermediate layer 13 is deposited on the element 10 and covers its entire surface. In an alternative embodiment, not shown in the figure, it could be deposited selectively on the part 20, for example before the deposition of the mask 70.
    Assembly example
    FIG. 4 schematically represents a section of an assembly between a 500 μm thick glass slide 10 and a sapphire blade 20. Prior to assembly, an intermediate layer of titanium 23 was deposited by a spraying method. cathode on the sapphire, for a total thickness of about one micrometer.
    The deposition of the intermediate layer 23 took place first in an inert atmosphere (eg argon), and in the presence of a gradually increasing concentration of oxygen thereafter. The chemical composition of the intermediate layer continuously changes from pure titanium to titanium oxide TIO2 (region 25), passing through all the intermediate stoichiometry.
    The assembly was then obtained by the application of an electric field comprising a DC component -2.4 kV (polarity of the electrode applied to the glass plate 10) superimposed on a component pulsed square wave of 1.2 kV at 1 kHz for 12.5 minutes at 200 ° C.
    FIG. 4 was obtained from SEM-EDX analysis (Scanning Electron Microscope-Energy Dispersive X-ray analysis) of a slice of the assembly. This technique makes it possible to obtain information on the chemical nature of the analyzed layers. The frame on the right of fig. 4 shows the concentration profiles of different atomic species. It should be noted that the concentration diagrams are not all on the same scale, and have been shifted to improve readability.
    The diagrams clearly show the presence of a chemical oxidation gradient inside the intermediate layer 23 and a sodium-rich zone, due to the migration of Na ions into the glass under the effect of the electric field. , which is characteristic of anode bonds.
    Reference numbers used in the figures
    [0056]<tb> 10 <SEP> first element<tb> 13 <SEP> middle layer of the first element<tb> 15 <SEP> intermediate substrate<tb> 16 <SEP> layer enriched with sodium<tb> 17 <SEP> depleted sodium layer<tb> 20 <SEP> second element<tb> 23 <SEP> middle layer of the second element<tb> 25 <SEP> oxidation gradient<tb> 30 <SEP> voltage source<Tb> 31 <September> electrode<Tb> 32 <September> electrode<Tb> 40 <September> enclosure<Tb> 45 <September> Heating<Tb> 50 <September> washing<Tb> 55 <September> deposition<tb> 60 <SEP> surface activation<Tb> 70 <September> mask<Tb> 84 <September> deposition<Tb> 86 <September> ablation<tb> 90 <SEP> active site<tb> 100 <SEP> scansion line
    权利要求:
    Claims (11)
    [1]
    An assembly method by anodic bonding between a first substrate and a second substrate comprising:• interposing an intermediate layer between the first and the second substrate;• assembly of the substrates at a determined assembly temperature;• Application of a voltage between the first and the second substrate,characterized in that said electrical voltage comprises a pulsed component or AC.
    [2]
    2. The assembly method according to the preceding claim, wherein said electrical voltage comprises a DC component.
    [3]
    3. Assembly method according to one of the preceding claims, wherein said assembly temperature is less than 300 ° C, preferably no greater than 200 ° C.
    [4]
    4. The assembly method according to the preceding claim, wherein said pulsed component or AC has a frequency greater than 50 Hz, preferably greater than 100 Hz.
    [5]
    5. Assembly method according to one of the preceding claims wherein said intermediate layer is a glass layer.
    [6]
    6. The assembly method according to the preceding claim, wherein the intermediate layer has a chemical gradient and / or an oxidation gradient.
    [7]
    7. Assembly method according to one of claims 1 to 3, wherein said intermediate layer is a titanium oxide layer.
    [8]
    8. The assembly method according to the preceding claim, comprising a step of deposition of an oxidizable thin layer on one of the substrates, followed by an oxidation step.
    [9]
    9. The assembly method according to one of the preceding claims, comprising a step of functionalizing said intermediate layer with a reactive plasma, for example an oxygen-rich plasma.
    [10]
    10. Assembly method according to one of the preceding claims, wherein said first substrate is metal, for example a substrate of steel, stainless steel, titanium, gold, aluminum, platinum or any alloys associated with these materials and said second substrate is a ceramic, or a glass, or a crystalline insulating material, in particular a synthetic sapphire.
    [11]
    11. Timepiece component, leather goods, decorative article, jewel, glasses or writing instrument, comprising an element assembled by the assembly method according to one of the preceding claims, for example:• watchglass;• watch background glass;• dial index;• Invisible gear comprising a transparent blade assembled to a driving element.
    类似技术:
    公开号 | 公开日 | 专利标题
    WO2015104252A2|2015-07-16|Device for securing a crystal to a watch case
    WO2017006219A1|2017-01-12|Attachment method using anodic bonding
    EP2399864B1|2016-03-30|Method for sealing two elements by low-temperature thermocompression
    CH705608B1|2016-03-31|A method of making a contact attenuated between engagement surfaces in a clockwork and clock incorporating these cooperation areas.
    EP3320403B1|2020-04-29|Method for fixing by anodic bonding
    WO2009092794A2|2009-07-30|Object provided with a graphics element transferred onto a support wafer and method of producing such an object
    EP2589568A1|2013-05-08|Improved micromechanical part allowing an electric discharge
    EP2784600A2|2014-10-01|Method for producing a substantially planar micro-mechanical component, and micromechanical component comprising at least a portion made of silicon oxide
    FR2460545A1|1981-01-23|PROCESS FOR PREPARING LAYERS OF HG1-XCDXTE
    CH702576B1|2014-11-14|micro-mechanical part coated.
    EP3165502B1|2018-12-19|Microelectronic device
    EP3956494A1|2022-02-23|Promoting adhesion of thin films
    EP2532619A1|2012-12-12|Anodic bonding for a MEMS device
    CH706838B1|2014-12-31|A method of making a timepiece component.
    CH707986A2|2014-10-31|Room to watch.
    EP2978871B1|2017-04-05|Method for a diamond vapor deposition
    WO2017203173A1|2017-11-30|Method for healing defects in a layer obtained by implantation then detachment from a substrate
    FR3063675A1|2018-09-14|MATERIAL COMPRISING A THIN LAYER OF AN ALLOY COMPRISING TITANIUM AND GOLD, AND PROCESS FOR OBTAINING SUCH MATERIAL
    EP3465788A1|2019-04-10|Method for producing a layer
    FR3048425A1|2017-09-08|STRUCTURE FOR DEVICE WITH INTEGRATED ELECTROMECHANICAL MICROSYSTEMS
    CH711499A2|2017-03-15|A method of forming a decorative surface on a micromechanical watchpiece and said micromechanical watchpiece.
    CH712824A1|2018-02-28|Clockwork mechanical component and method for producing such a component.
    CH707800A2|2014-09-30|A method of vapor deposition of diamond and equipment for performing this method.
    同族专利:
    公开号 | 公开日
    EP3320403B1|2020-04-29|
    EP3320403A1|2018-05-16|
    US20180188692A1|2018-07-05|
    US10788793B2|2020-09-29|
    WO2017006218A1|2017-01-12|
    CH711295B1|2019-11-29|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    CH678680GA3|1990-02-20|1991-10-31|Watch glass mounting - has a deposited metal layer between decorative layer and solder to prevent visible effects of soldering|
    WO2015104252A2|2014-01-07|2015-07-16|Cartier Création Studio Sa|Device for securing a crystal to a watch case|
    GB1138401A|1965-05-06|1969-01-01|Mallory & Co Inc P R|Bonding|
    JPH0580163A|1991-09-20|1993-04-02|Seiko Epson Corp|Exterior parts for clock|
    JPH08166469A|1994-12-15|1996-06-25|Citizen Watch Co Ltd|Clock dial and production thereof|
    US6475326B2|2000-12-13|2002-11-05|Applied Materials, Inc.|Anodic bonding of a stack of conductive and glass layers|
    JP2007292499A|2006-04-21|2007-11-08|Sony Corp|Motion sensor and manufacturing method therefor|
    EP1988575A3|2007-03-26|2008-12-31|Semiconductor Energy Laboratory Co., Ltd.|Semiconductor device|
    JP4348454B2|2007-11-08|2009-10-21|三菱重工業株式会社|Device and device manufacturing method|
    CN102884814A|2010-02-26|2013-01-16|株式会社意捷莫斯尔|Ultrasonic oscillator unit and ultrasonic probe|
    JP2012085253A|2010-03-25|2012-04-26|Nippon Dempa Kogyo Co Ltd|Surface-mounted crystal device and method of manufacturing crystal device|
    JP2011235533A|2010-05-10|2011-11-24|Seiko Epson Corp|Liquid droplet ejection head and liquid droplet ejection apparatus|
    US8357974B2|2010-06-30|2013-01-22|Corning Incorporated|Semiconductor on glass substrate with stiffening layer and process of making the same|
    EP2532619A1|2011-06-08|2012-12-12|Debiotech S.A.|Anodic bonding for a MEMS device|
    EP2728904A4|2011-06-27|2015-03-04|Ingen Msl Inc|Vibrating element and method for producing vibrating element|
    JP6048794B2|2012-07-31|2016-12-21|株式会社リコー|Nozzle plate, nozzle plate manufacturing method, inkjet head, and inkjet printing apparatus|CH716104A1|2019-04-18|2020-10-30|Sy&Se Sa|A method of improving the adhesion of a layer to a substrate.|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    CH9772015A|CH711295B1|2015-07-06|2015-07-06|Fixation method by anodic joining.|CH9772015A| CH711295B1|2015-07-06|2015-07-06|Fixation method by anodic joining.|
    PCT/IB2016/053871| WO2017006218A1|2015-07-06|2016-06-29|Attachment method using anodic bonding|
    US15/741,085| US10788793B2|2015-07-06|2016-06-29|Attachment method using anodic bonding|
    EP16734046.2A| EP3320403B1|2015-07-06|2016-06-29|Method for fixing by anodic bonding|
    [返回顶部]